KR19990002350A - Manufacturing method of thin film type optical path control device - Google Patents

Abstract

Disclosed is a method of manufacturing a thin film type optical path control device. The method includes providing an active matrix having M × N transistors embedded therein and a drain pad formed on one side thereof, and forming an actuator. The forming of the actuator may include forming a first layer, a lower electrode layer, a second layer, and an upper electrode layer on the active matrix, applying a first photoresist on the upper electrode layer, and then applying the upper electrode layer to the upper electrode. Patterning, applying a second photoresist on top of the upper electrode and the second layer, and then patterning the second layer with a strained layer, applying a third photoresist on top of the upper electrode, the strained layer and the lower electrode layer Thereafter, using the third photoresist as an etching mask, patterning the lower electrode layer to the lower electrode, and curing the third photoresist. According to the method, the third photoresist is cured using an argon plasma, and the support layer is formed using the cured third photoresist as an etch mask and used as an actuator protective layer, whereby the sacrificial layer is hydrogen fluoride (HF). When removed with vapor, the photoresist may be peeled to prevent damage to the top electrode and strain layer. In addition, sticking of pixels can be prevented from occurring due to the remaining photoresist.

Description

Manufacturing method of thin film type optical path control device

The present invention relates to a method for manufacturing an Actuated Mirror Array (AMA), which is a thin film type optical path adjusting device. More specifically, the manufacturing process can be shortened by patterning the lower electrode and the support layer using one photoresist as an etching mask. The present invention relates to a method of manufacturing a thin film type optical path control apparatus capable of preventing peeling of a photoresist by curing the photoresist, thereby preventing damage to an upper electrode and a deformation layer, and sticking of pixels due to the photoresist residue.

Optical path control devices or spatial light modulators for projecting optical energy onto a screen may be applied to various fields such as optical communication, image processing, and information display devices. Typically, such devices are classified into a direct-view image display device and a projection-type image display device according to a method of displaying optical energy on a screen.

An example of a direct-view image display device is a CRT (Cathode Ray Tube). The CRT device is called a CRT, which has excellent image quality but increases in weight and volume as the screen is enlarged, leading to an increase in manufacturing cost. There is. Projection type image display apparatuses include a liquid crystal display (LCD), a deformable mirror device (DMD), and an AMA. Such projection image display devices can be further divided into two groups according to their optical characteristics. That is, devices such as LCDs can be classified as transmissive spatial light modulators, while DMD and AMA can be classified as reflective spatial light modulators.

Transmission optical modulators, such as LCDs, have a very simple optical structure, which makes them thinner, lighter in weight, and smaller in volume. However, due to the polarity of the light, the light efficiency is low, there is a problem inherent in the liquid crystal material, for example, there is a disadvantage that the response speed is slow and the inside is easy to overheat. In addition, the maximum light efficiency of existing transmission light modulators is limited to a range of 1-2%, requiring dark room conditions to provide acceptable display quality. Therefore, optical modulators such as DMD and AMA have been developed to solve the above problems.

Although DMD shows a relatively good light efficiency of about 5%, the hinge structure employed in the DMD not only causes serious fatigue problems, but also requires a very complicated and expensive driving circuit. In the AMA, each of the mirrors installed therein reflects light incident from the light source at a predetermined angle, and the reflected light is projected on the screen through an aperture such as a slit or a pinhole. It is a device that can adjust the speed of light to form an image. Therefore, its structure and operation principle are simple, and high light efficiency (more than 10% light efficiency) can be obtained compared to LCD or DMD. In addition, the contrast of the image projected on the screen is improved to obtain a bright and clear image.

Each actuator of the AMA generates a deformation in accordance with the electric field generated by the applied electric picture signal and the bias signal. As the actuator deforms, each of the mirrors mounted thereon is tilted. Accordingly, the inclined mirrors reflect light incident from the light source at a predetermined angle to form an image on the screen. Piezoelectric materials such as PZT (Pb (Zr, Ti) O ₃ ) or PLZT ((Pb, La) (Zr, Ti) O ₃ ) are used as actuators for driving the respective mirrors. The actuator may also be configured as a warping material such as PMN (Pb (Mg, Nb) O ₃ ).

These AMA devices are largely divided into bulk type and thin film type. The bulk optical path control device is disclosed in US Pat. No. 5,085,497 to Gregory Um et al. The bulk optical path control device cuts a thin layer of multilayer ceramic, mounts a ceramic wafer having a metal electrode therein in an active matrix including a transistor, and then processes it using a sawing method and mirrors the upper portion thereof. By installing. However, the bulk optical path control device requires very high precision in design and manufacturing, and has a disadvantage in that the response of the deformation layer is slow.

Accordingly, a thin film type optical path control apparatus that can be manufactured using a semiconductor manufacturing process has been developed. Such a thin film type optical path control device is disclosed in patent application No. 96-42199 (name of the invention: pad connection method of a thin film type optical path control device) which the applicant applied for a patent on September 24, 1996.

Figure 1 shows a cross-sectional view of the thin film type optical path control device described in the preceding application. Referring to FIG. 1, the thin film type optical path control apparatus includes an active matrix 1 and an actuator 65 formed on the active matrix 1.

The active matrix 1 in which M x N (M and N are integers) embedded MOS transistors (not shown) and having a drain pad 5 formed on one side thereof is an active matrix 1 and a drain pad 5. It includes a protective layer 10 formed on the upper portion and the etch stop layer 15 formed on the protective layer 10.

The actuator 1 has a cross section in which one side of the actuator 1 is in contact with a portion in which the drain pad 5 is formed in the lower portion of the etch stop layer 15 and the other side thereof is parallel to the etch stop layer 15 through the air gap 25. Membrane 30 having an upper portion, lower electrode 35 formed on upper portion of membrane 30, strained layer 40 formed on upper portion of lower electrode 35, upper electrode 45 formed on upper portion of strained layer 40. And vertically from one side of the strained layer 40 to the drain pad 5 through the strained layer 40, the lower electrode 35, the membrane 30, the etch stop layer 15, and the protective layer 10. The via contact 50 includes a via contact 55 formed to electrically connect the lower electrode 35 and the drain pad 5 to the formed via hole 50.

Hereinafter, a manufacturing method of the thin film type optical path control device will be described with reference to the drawings.

2A to 2C are manufacturing process diagrams of the apparatus shown in FIG. 1. Referring to FIG. 2A, a protective layer 10 is stacked on top of an active matrix 1 having M × N MOS transistors (not shown) and a drain pad 5 formed on one side thereof. do. The protective layer 10 is formed of phosphorus silicate glass (PSG) to have a thickness of about 1.0 to about 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 10 prevents damage to the active matrix 1 in which the transistor is embedded during subsequent processing.

An etch stop layer 15 is stacked on the passivation layer 10. The etch stop layer 15 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 15 prevents the active matrix 1 and the protective layer 10 from being etched due to a subsequent etching process. The sacrificial layer 20 is stacked on the etch stop layer 15. The sacrificial layer 20 is formed of phosphorous silicate (PSG) to have a thickness of about 1.0 to about 2.0 μm by the Atmospheric Pressure Vapor Deposition (APCVD) method. Subsequently, a portion of the sacrificial layer 20 in which the drain pad 5 is formed is etched to form a support part of the actuator 65 to expose a portion of the etch stop layer 15.

Referring to FIG. 2B, the first layer 29 is stacked on the exposed etch stop layer 15 and the sacrificial layer 20. The first layer 29 is formed to have a thickness of about 0.01 to 1.0 탆 using low pressure chemical vapor deposition (LPCVD). Subsequently, a lower electrode layer 34 made of platinum (Pt), tantalum (Ta), platinum-tantalum (Pt-Ta), or the like is stacked on the first layer 29. The lower electrode layer 34 is formed to have a thickness of about 500 to 2000 kV using a sputtering method. The lower electrode layer 34 is later patterned with the lower electrode 35 so that a first signal (image signal) is externally applied through the transistor, the drain pad 5 and the via contact 55 embedded in the active matrix 1. .

The second layer 39 is stacked on the lower electrode layer 34. The second layer 39 is formed into a piezoelectric material such as PZT or PLZT by using a sol-gel method or a chemical vapor deposition (CVD) method in a range of 0.1 to 1.0 탆, preferably 0.4. It is formed to have a thickness of about μm. Subsequently, the piezoelectric material constituting the second layer 39 is phase shifted by using a rapid thermal annealing (RTA) method. The second layer 39 is later patterned into the strained layer 40.

An upper electrode layer is stacked on top of the second layer 39. The upper electrode layer is formed to have a thickness of about 500 to 2000 kPa using aluminum or platinum by sputtering. Subsequently, after applying a first photoresist (not shown) on the upper electrode layer, the upper electrode layer having a predetermined pixel shape is patterned by patterning the upper electrode layer using the first photoresist as an etching mask. 45) and remove the first photoresist. In this case, the stripe 60 is formed on one side of the upper electrode 45. The stripe 60 causes the upper electrode 45 to operate uniformly when the actuator 65 causes deformation to prevent diffuse reflection of light incident from the light source. A second signal (bias signal) is applied to the upper electrode 45 from the outside through a common electrode line (not shown). Therefore, when the first signal is applied to the lower electrode 35 and the second signal is applied to the upper electrode 45 to generate an electric field according to the potential difference between the upper electrode 45 and the lower electrode 35, As a result, the strained layer 41 is deformed.

Referring to FIG. 2C, after applying a second photoresist (not shown) on the second layer 39, the second layer 39 is a predetermined pixel using the second photoresist as an etching mask. Patterned into a strained layer 40 having a shape and remove the second photoresist. Subsequently, after applying a third photoresist (not shown) on the lower electrode layer 34, the lower electrode layer 34 also has a predetermined pixel shape using the lower electrode layer 34 as an etching mask. Pattern with. The strain layer 40, the lower electrode 35, the first layer 29, the etch stop layer 15, and the protective layer 10 are sequentially etched from one side of the strain layer 40 to form a via hole 50. ). Thus, the via hole 50 is vertically formed from one side of the strained layer 40 to the drain pad 5. Subsequently, a metal such as tungsten (W) or titanium (Ti) is deposited in the via hole 50 to form a via contact 55 to remove the third photoresist. The via contact 55 electrically connects the drain pad 5 and the lower electrode 35. Therefore, the first signal applied from the outside is applied to the lower electrode 35 through the transistor, the drain pad 5, and the via contact 55 embedded in the active matrix 1.

FIG. 2D is a plan view in which the apparatus shown in FIG. 2C is arranged in M × N. Referring to FIG. 2D, as described above, after forming M × N actuators 65, a metal such as copper (Cu), nickel (Ni), or gold (Au) is sputtered to form an active matrix ( Deposition at the bottom of 1) forms an ohmic contact (not shown). In addition, the active matrix 1 is diced to a depth of about 200 μm in preparation for TCP (Tape Carrier Package) bonding for applying the second signal to the upper electrode and the first signal to the lower electrode. . After applying the fourth photoresist 70 to the front surface (parts A, B, and C) of the resultant, to expose the pad 80 of the AMA panel connected to the pad (not shown) of TCP The fourth photoresist 70 on the pad 80 portion of the AMA panel is patterned to expose the pad 80 portion (part B) of the AMA panel. Subsequently, the first layer 29 is patterned using the remaining fourth photoresist 70 as an etching mask to form a membrane 30 having a predetermined pixel shape, and then the fourth photoresist 70 is formed. By using the actuator 65 as a protective layer, the sacrificial layer 20 under the actuator 65 is etched using hydrogen fluoride (HF) vapor, rinsed and dried, as shown in FIG. 1. Complete the same thin film optical path control device. After cutting the active matrix 1 completely, the pad 80 of the AMA panel and the pad (not shown) of the TCP are connected to complete the manufacture of the thin film AMA module.

However, in the above-described thin film type optical path control apparatus, the manufacturing process is complicated by patterning the lower electrode layer and the membrane by using a separate etching mask, and the sacrificial layer is hydrogen fluoride vapor using the fourth photoresist as an actuator protective layer. Increasing the concentration of hydrogen fluoride during etching to reduce the etching time of the sacrificial layer may cause the fourth photoresist on the actuator to peel, resulting in damage of the upper electrode and strain layer by hydrogen fluoride vapor. There is a problem coming. In addition, the residue of the fourth photoresist is raised on the inside of the pixel and the pad portion of the AMA panel during the cleaning of the device, causing sticking of the actuator, so that the device does not operate even when a signal is applied. There is this.

Accordingly, an object of the present invention is to shorten the manufacturing process by patterning the lower electrode and the support layer using one photoresist as an etching mask, and to prevent the filling of the photoresist by curing the photoresist, The present invention provides a method of manufacturing a thin film type optical path control apparatus capable of preventing damage to a strained layer and sticking of pixels due to the photoresist residue.

1 is a cross-sectional view of a thin film type optical path adjusting device described in the applicant's prior application.

2A to 2D are manufacturing process diagrams of the apparatus shown in FIG. 1.

3 is a plan view of a thin film type optical path control apparatus according to the present invention.

4 is a cross-sectional view of the device shown in FIG. 3 taken along line E′E ′.

5A to 5C are manufacturing process diagrams of the apparatus shown in FIG. 4.

* Explanation of symbols for the main parts of the drawings

100: active matrix 102: drain pad

104: protective layer 106: etch stop layer

112: support layer 114: lower electrode

116 strain layer 118 upper electrode

120: stripe 122: beer hall

124: beer contact 130: actuator

140: third photoresist

In order to achieve the above object, the present invention provides an active matrix in which M × N (M, N is an integer) transistors are formed inside and a drain pad is formed on one side, and an actuator is provided on the active matrix. It provides a method for manufacturing a thin film type optical path control device comprising the step of forming. The forming of the actuator may include: i) forming a first layer, a lower electrode layer, a second layer and an upper electrode layer on the active matrix; ii) applying a first photoresist on the upper electrode layer. Patterning the upper electrode layer with an upper electrode, iii) applying a second photoresist on top of the upper electrode and the second layer, and then patterning the second layer with a strained layer, iii) the top After applying a third photoresist on the electrode, the deforming layer, and the lower electrode layer, patterning the lower electrode layer to the lower electrode using the third photoresist as an etching mask; and iii) the third photoresist. Hardening.

According to the manufacturing method of the thin film type optical path control apparatus according to the present invention, after applying the photoresist on the lower electrode and patterning the lower electrode, the photoresist is cured using argon plasma and the cured photoresist as an etching mask When the sacrificial layer is etched using hydrogen fluoride vapor using the cured photoresist as an actuator protective layer, the photoresist is peeled to damage the top electrode and strain layer by hydrogen fluoride. It can prevent wearing. In addition, the sticking phenomenon of the pixel can be prevented from occurring due to the remaining photoresist, and the manufacturing process can be shortened by continuously patterning the lower electrode and the support layer using one mask.

Hereinafter, a method of manufacturing a thin film type optical path control device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

3 is a plan view showing a thin film type optical path adjusting device according to the present invention, and FIG. 4 is a cross-sectional view taken along line E′E ′ of the device shown in FIG. 3.

3 and 4, the thin film type optical path adjusting device according to the present invention includes an active matrix 100 and an active matrix 100 in which M × N (M and N are integers) MOS transistors (not shown) are embedded. It includes an actuator 130 formed on the top.

The active matrix 100 includes a drain pad 102 extending from the drain region of the transistor, a protective layer 104 formed on the active matrix 100 and the drain pad 102, and a protective layer 104. It includes an etch stop layer 106 formed on the top.

The actuator 130 has one side contacting a portion of the etch stop layer 106 in which the drain pad 102 is formed, and the other side is formed in parallel with the etch stop layer 106 via the air gap 110. The support layer 112 having a cross section, the lower electrode 114 formed on the support layer 112, the strain layer 116 formed on the lower electrode 114, and the upper electrode 118 formed on the strain layer 116. And from one side of the strained layer 116 to the drain pad 102 through the strained layer 116, the lower electrode 114, the support layer 112, the etch stop layer 106, and the protective layer 104. The via contact 122 includes a via contact 124 formed to electrically connect the lower electrode 114 and the drain pad 102 to each other. A stripe 120 is formed at one side of the upper electrode 118 to uniformly operate the upper electrode 118 to prevent diffuse reflection of light incident from the light source.

In addition, one side of the plane of the support layer 112 has a rectangular concave portion at the center thereof, and the rectangular concave portion has a shape that widens stepwise toward both edges. The other side of the plane of the support layer 112 has a protrusion that narrows stepwise to correspond to the stepped concave portion of the support layer of the adjacent actuator. Therefore, the protrusion of the support layer 112 is formed by fitting into the concave portion of the support layer of the adjacent actuator, and the protrusion of the support layer of the actuator adjacent to the concave portion of the support layer 112 is formed. The support layer 112 performs the function of a membrane supporting the actuator of the thin film type optical path adjusting device described in the prior application.

Hereinafter, a method of manufacturing a thin film type optical path control apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

5A to 5C show a manufacturing process diagram of the apparatus shown in FIG. 4. In Figs. 5A to 5C, the same reference numerals are used for the same members as in Fig. 4.

Referring to FIG. 5A, a protective layer 104 is formed by using silicate glass (PSG) on an active matrix 100 having M × N transistors (not shown) and a drain pad 102 formed on one side thereof. )). The protective layer 104 is formed to have a thickness of about 1.0 to 2.0 µm using the chemical vapor deposition (CVD) method. The protective layer 104 prevents damage to the active matrix 100 in which the transistor is embedded due to a subsequent process.

An etch stop layer 106 made of nitride is stacked on the passivation layer 104. The etch stop layer 106 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 106 may prevent the protective layer 104 and the active matrix 100 having the transistor embedded therein from being etched during the subsequent etching process.

The sacrificial layer 108 is stacked on the etch stop layer 106. The sacrificial layer 108 serves to facilitate stacking of the thin film for forming the actuator 130, and is removed by hydrogen fluoride (HF) vapor after the actuator 130 is formed. The sacrificial layer 108 is formed of phosphorus silicate glass (PSG) having a high concentration of phosphorus (PG) to have a thickness of about 2.0 to 3.2 μm using an atmospheric chemical vapor deposition (APCVD) method. In this case, since the sacrificial layer 108 covers the upper portion of the active matrix 100 in which the transistor is embedded, the flatness of the surface thereof is very poor. Therefore, the surface of the sacrificial layer 108 is planarized using a spin on glass (SOG) method or a chemical mechanical polishing (CMP) method. Subsequently, a portion of the sacrificial layer 108 in which the drain pad 102 is formed is etched to expose a portion of the etch stop layer 106 to form a position where the support portion of the actuator 130 is to be formed.

Referring to FIG. 5B, the first layer 111 is stacked on top of the exposed etch stop layer 106 and on top of the sacrificial layer 108. The first layer 111 is formed to have a thickness of about 0.1 to 1.0 탆 using a low pressure chemical vapor deposition (LPCVD) method for a hard material such as nitride or metal. At this time, the first layer 111 is formed while changing the ratio of the reaction gas in the low pressure reaction vessel to control the stress in the first layer 111. The first layer 111 is later patterned into a support layer 112 having a predetermined pixel shape.

The lower electrode layer 113 is stacked on the first layer 111 by using a metal having electrical conductivity such as platinum, tantalum, or platinum-tantalum. The lower electrode layer 113 is formed to have a thickness of about 0.01 to 1.0 µm using a sputtering method or a chemical vapor deposition method. Subsequently, the lower electrode layer 113 is iso-cutted to separate the lower electrode layer 113 for each pixel. The lower electrode layer 113 is later patterned into the lower electrode 114, and the lower electrode 114 includes a transistor and a drain pad 102 in which a first signal (image signal) applied from the outside is embedded in the active matrix 100. And via via contact 124.

The second layer 115 is stacked on the lower electrode layer 113 by using a piezoelectric material such as PZT or PLZT. The second layer 115 may have a thickness of about 0.1-1 .0 µm using a sol-gel method, a sputtering method, or a chemical vapor deposition (CVD) method, and preferably 0.4 µm using a sol-gel method. After forming to have a thickness of about the degree, the piezoelectric material constituting the second layer 115 is heat-treated by rapid heat treatment (RTA) to phase change and then polarize. The second layer 115 is later patterned into the strained layer 116, which is strained by an electric field generated between the upper electrode 118 and the lower electrode 114.

The upper electrode layer is stacked on top of the second layer 115. The upper electrode layer is formed of a metal having electrical conductivity and reflectivity, such as aluminum, silver, or platinum, to have a thickness of about 0.01 to 1.0 탆 using a sputtering method or a chemical vapor deposition method. Subsequently, after applying a first photoresist (not shown) on the upper electrode layer, the upper electrode layer is patterned into an upper electrode 118 having a predetermined pixel shape by using the first photoresist as an etching mask, and The first photoresist is etched away. In this case, a stripe 120 is formed at one side of the upper electrode 118 to uniformly operate the upper electrode 118 when the actuator 130 causes deformation, thereby preventing diffuse reflection of light incident from the light source. The second signal (image signal) is applied to the upper electrode 118 through a common electrode line (not shown) from the outside to generate an electric field according to the potential difference between the lower electrode 114 and the upper electrode 118.

Referring to FIG. 5C, after applying a second photoresist (not shown) on the second layer 115 and the upper electrode 118, the second layer is formed by using the second photoresist as an etching mask. The pattern 115 is patterned into a strained layer 116 having a predetermined pixel shape and the second photoresist is removed. In this case, the strained layer 116 has a slightly larger area than the upper electrode 118. Subsequently, the third photoresist 140 is coated on the lower electrode layer 114, the deformation layer 116, and the upper electrode 118 to a thickness of about 1.5 μm to about 2.5 μm, and then, an etch mask. The lower electrode layer 113 is patterned into a lower electrode 114 having a predetermined pixel shape by using the. The lower electrode 114 is patterned to have a slightly larger area than the strained layer 116. The strained layer 116, the lower electrode 114, the first layer 111, the etch stop layer 106, and the protective layer 104 are sequentially formed from one side of the strained layer 116 to the top of the drain pad 102. The via hole 122 is formed from the strained layer 116 to the upper portion of the drain pad 102 by etching. Subsequently, a metal such as tungsten, platinum, or titanium is deposited using a sputtering method to form the via contact 124 to electrically connect the drain pad 102 and the lower electrode 114. Thus, the via contact 124 is formed vertically from the lower electrode 114 to the top of the drain pad 102 in the via hole 122. Therefore, the first signal applied from the outside is applied to the lower electrode 114 through the transistor, the drain pad 102 and the via contact 124 embedded in the active matrix 100.

Subsequently, the third photoresist 140 is hardened using an argon (Ar) plasma. As described above, when the third photoresist 140 is subjected to argon plasma treatment, not only the hardness of the third photoresist 140 may be increased but also between the third photoresist 140 and the lower upper electrode 118. Adhesion can be improved. In addition, when the third photoresist 140 cured as described above is etched with respect to hydrogen fluoride to remove the sacrificial layer 108, the third photoresist 140 is filled with hydrogen fluoride. The degree is significantly reduced. Therefore, when the sacrificial layer 108 is removed, damage to the upper electrode and the strained layer due to hydrogen fluoride vapor can be prevented.

Subsequently, a metal such as chromium, copper, or gold is deposited at the bottom of the active matrix 100 using a sputtering method or a deposition method to form an ohmic contact (not shown). Subsequently, the active matrix 100 is diced in preparation for TCP bonding for applying the second signal to the upper electrode 118 and simultaneously applying the first signal to the lower electrode 114. At this time, the active matrix 100 is cut to a predetermined depth, preferably about 200 μm, for subsequent processing.

The AMA panel pad (not shown) on the active matrix 100 is exposed using the third photoresist 140 cured using an argon plasma as an etching mask as described above, and the first layer 111 is exposed. Patterning is performed on the support layer 112 having a predetermined pixel shape. In this case, the support layer 112 has a slightly larger area than the lower electrode 114. Subsequently, using the remaining third photoresist 140 as the protective layer of the actuator 130, the sacrificial layer 108 is etched using hydrogen fluoride (HF) vapor to form an air gap 110 and The M × N actuators 130 are completed by removing the third photoresist 140. In the present invention, the lower electrode layer 113 is patterned using the third photoresist 140 as an etching mask, the lower electrode 114 is cured, and the third photoresist 140 is cured. By using the patterned first layer 111 to the support layer 112, the manufacturing process of the device can be shortened. As described above, after the active matrix 100 having the thin film AMA element is completely cut out into a rectangular shape, the pad of the AMA panel and the pad of TCP (not shown) are connected by using an ACF (not shown). The manufacture of the thin film type AMA module as shown in FIG. 4 is completed.

In the above-described thin film type optical path control device according to the present invention, a second signal (bias signal) is applied to the upper electrode 118 through a TCP pad, an AMA panel pad, and a common electrode line. At the same time, the first signal (image signal) transmitted through the pad of the TCP and the AMA panel pad is transferred to the lower electrode 114 through the transistor, the drain pad 102 and the via contact 124 embedded in the active matrix 100. Is approved. Thus, an electric field is generated between the upper electrode 118 and the lower electrode 114 according to a potential difference, and the deformation layer 116 between the upper electrode 118 and the lower electrode 114 causes deformation by the electric field. The strained layer 116 contracts in a direction orthogonal to the electric field, and thus the actuator 130 including the strained layer 116 is bent upward at a predetermined angle. The upper electrode 118, which also functions as a mirror that reflects light, is formed on the actuator 130 and is inclined together with the actuator 130. Accordingly, the upper electrode 118 reflects the light incident from the light source at a predetermined angle, and the reflected light passes through the slit to form an image on the screen.

According to the manufacturing method of the thin film type optical path control apparatus according to the present invention, after applying the photoresist on the lower electrode and patterning the lower electrode, the photoresist is cured using argon plasma and the cured photoresist as an etching mask When the sacrificial layer is etched using hydrogen fluoride vapor using the cured photoresist as an actuator protective layer, the photoresist is peeled to damage the top electrode and strain layer by hydrogen fluoride. It can prevent wearing. In addition, sticking of pixels may be prevented from occurring due to the remaining photoresist, and the lower electrode and the support layer may be patterned by using a single mask to shorten the manufacturing process of the device.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (4)

Providing an active matrix having M × N (M, N is an integer) transistors formed therein and a drain pad formed on one side thereof; And Iii) forming a first layer, a lower electrode layer, a second layer and an upper electrode layer on top of the active matrix, ii) applying a first photoresist on top of the upper electrode layer, and then applying the upper electrode layer to the upper electrode. Patterning, iii) applying a second photoresist on top of said upper electrode and said second layer, and then patterning said second layer into a strained layer, iii) said upper electrode, said strained layer and said bottom After applying a third photoresist on the electrode layer, patterning the lower electrode layer to the lower electrode using the third photoresist as an etch mask, and iii) hardening the third photoresist. And forming an actuator having the thin film type optical path control device. The method of claim 1, wherein the curing of the third photoresist is performed by using an argon (Ar) plasma. The apparatus of claim 1, wherein the forming of the actuator further comprises patterning the first layer as a support layer using the cured third photoresist as an etch mask. Manufacturing method. The actuator of claim 1, wherein the forming of the first layer is performed after the forming of the sacrificial layer on the active matrix and etching the portion of the sacrificial layer where the drain pad is formed. Forming the method further comprises the step of removing the sacrificial layer using the cured third photoresist as a protective layer for protecting the actuator.