KR19980034573U - Cooling device of semiconductor wafer etching equipment - Google Patents
Cooling device of semiconductor wafer etching equipment Download PDFInfo
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- KR19980034573U KR19980034573U KR2019960047522U KR19960047522U KR19980034573U KR 19980034573 U KR19980034573 U KR 19980034573U KR 2019960047522 U KR2019960047522 U KR 2019960047522U KR 19960047522 U KR19960047522 U KR 19960047522U KR 19980034573 U KR19980034573 U KR 19980034573U
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- gas
- cooling
- semiconductor wafer
- injection line
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- 238000005530 etching Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000001816 cooling Methods 0.000 title claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 72
- 238000002347 injection Methods 0.000 claims abstract description 29
- 239000007924 injection Substances 0.000 claims abstract description 29
- 239000000112 cooling gas Substances 0.000 claims abstract description 22
- 238000007599 discharging Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 고안은 반도체 웨이퍼 식각장비의 냉각장치에 관한 것으로, 종래에는 가스주입 라인에 이물질 등이 막혀서 냉각가스가 공급되지 못하는 경우에 이와 같은 상태를 확인할 방법이 없어서 조치를 취하지 못하는 문제점이 있었다. 본 고안 반도체 웨이퍼 식각장비의 냉각장치는 냉각가스를 배출하는 가스배출라인(15) 상에 압력을 감지하기 위한 압력감지기(19)를 설치하여, 가스배출라인(15)으로 흐르는 냉각가스의 배출압력을 측정함으로서, 이물질 등에 의하여 가스주입라인(14)이 막힌 경우에 압력게이지(19)에 나타나는 압력값의 차이를 확인할 수 있게 되어 적절한 조치를 취할 수 있는 효과가 있다.The present invention relates to a cooling device for a semiconductor wafer etching equipment, and in the related art, there is a problem in that no action can be taken because there is no way to check such a state when the gas injection line is clogged with foreign matters and the cooling gas cannot be supplied. The cooling device of the inventive semiconductor wafer etching equipment is provided with a pressure sensor 19 for sensing the pressure on the gas discharge line 15 for discharging the cooling gas, the discharge pressure of the cooling gas flowing to the gas discharge line 15 By measuring the difference between the pressure value appearing on the pressure gauge 19 when the gas injection line 14 is clogged by foreign matter, etc., there is an effect that can take appropriate measures.
Description
본 고안은 반도체 웨이퍼 식각장비의 냉각장치에 관한 것으로, 특히 냉각가스의 흐름을 확인할 수 있도록 하는데 적합한 반도체 웨이퍼 식각장비의 냉각장치에 관한 것이다.The present invention relates to a cooling device of a semiconductor wafer etching equipment, and more particularly to a cooling device of a semiconductor wafer etching equipment suitable for enabling the check of the flow of the cooling gas.
일반적으로 웨이퍼의 상면에 메탈배선을 형성한 다음, 메탈 중에 필요없는 부분을 제거하는 식각(ETCHING)공정을 진행하게 되는데, 이와 같은 식각공정을 진행하는 식각장비가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.In general, a metal wiring is formed on the upper surface of the wafer, and then an etching process for removing an unnecessary portion of the metal is performed. An etching apparatus for performing such an etching process is illustrated in FIG. Briefly described as follows.
도 1은 종래 냉각장치가 구비된 반도체 웨이퍼 식각장비의 구성을 개략적으로 보인 배관도로서, 도시된 바와 같이, 공정 챔버(CHAMBER)(1)의 내측에 웨이퍼(W)를 고정하기 위한 일렉트로 스태틱 척(ESC: ELECTRO STATIC CHUCK)(2)이 설치되어 있고, 그 일렉트로 스태틱 척(2)의 상단부는 단차지도록 형성되어 웨이퍼(W)가 설치시 공간부(3)가 형성되도록 되어 있다.1 is a piping diagram schematically showing the configuration of a semiconductor wafer etching apparatus equipped with a conventional cooling apparatus. As shown in FIG. ESC: ELECTRO STATIC CHUCK) 2 is provided, and the upper end of the electrostatic chuck 2 is formed to be stepped so that the space 3 is formed when the wafer W is installed.
그리고, 상기 일렉트로 스태틱 척(2)의 상단부에 형성되는 공간부(3)의 하방으로는 냉각가스를 주입하기 위한 가스 주입라인(4)이 설치되어 있고, 그 가스 주입라인(4) 상에는 가스의 흐르는 양을 조절하기 위한 유량조절기(MASS FLOW CONTROLLER)(5)와, 압력을 측정하기 위한 압력게이지(6)가 설치되어 있다.A gas injection line 4 for injecting cooling gas is provided below the space 3 formed at the upper end of the electrostatic chuck 2, and on the gas injection line 4 there is a gas injection line. A mass flow controller 5 for adjusting the flow rate and a pressure gauge 6 for measuring pressure are provided.
또한, 상기 가스주입라인(4)의 상단부에 연결하여 잔류가스를 주입하기 위한 연결라인(7)이 설치되어 있고, 챔버(1)의 일측 하방으로는 잔류가스를 배출하기 위한 가스배출라인(8)이 설치되어 있으며, 그 가스배출라인(8)의 하단부에는 가스를 펌핑하기 위한 펌프(9)가 설치되어 있다.In addition, a connection line 7 is provided to connect the upper end of the gas injection line 4 to inject residual gas, and a gas discharge line 8 for discharging the residual gas to one side of the chamber 1 below. ) Is installed, and a pump 9 for pumping gas is installed at the lower end of the gas discharge line 8.
도면중 미설명부호 V1, V2, V3, V4는 제1/제2/제3/제4 밸브이다.In the figure, reference numerals V1, V2, V3, and V4 denote first, second, third and fourth valves.
상기와 같이 구성되어 있는 종래 냉각장치가 구비된 반도체 웨이퍼 식각장비를 이용하여 식각공정이 진행되는 동작을 설명하면 다음과 같다.Referring to the operation of the etching process using the semiconductor wafer etching equipment equipped with a conventional cooling device configured as described above are as follows.
먼저, 챔버(1)의 내측에 설치되어 있는 일렉트로 스태틱 척(2)의 상면에 식각하고자하는 웨이퍼(W)를 고정시킨다. 이와 같은 상태에서 챔버(1)의 내측온도를 약 80℃ 정도로 유지시키고, 챔버(1)의 내측에 공정가스를 주입하면서, 전원을 인가하면 챔버(1)의 내측에 플라즈마가 발생하여 식각이 진행된다.First, the wafer W to be etched is fixed to the upper surface of the electrostatic chuck 2 provided inside the chamber 1. In this state, the inside temperature of the chamber 1 is maintained at about 80 ° C., while process gas is injected into the chamber 1 while power is applied, plasma is generated inside the chamber 1, and etching proceeds. do.
상기와 같이 식각이 진행되면 웨이퍼(W)에 열이 발생하는데, 이때 가스주입라인(4)으로 헬륨가스를 공급하여 공간부(3)로 주입함으로서 웨이퍼(W)를 냉각하게 된다. 식각공정이 종료되면 제 1, 제 2밸브(V1)(V2)를 닫고, 제 3, 제 4밸브(V3)(V4)를 열은 다음, 펌프(9)로 펌핑하여 가스주입라인(4)에 존재하는 잔류가스를 배출한다.When etching proceeds as described above, heat is generated in the wafer W. At this time, helium gas is supplied to the gas injection line 4 and injected into the space 3 to cool the wafer W. When the etching process is completed, the first and second valves V1 and V2 are closed, the third and fourth valves V3 and V4 are opened, and the pump 9 is pumped to the gas injection line 4. Emission of residual gas present in
그러나, 상기와 같은 종래 반도체 웨이퍼 식각장비의 냉각장치는 장기간 반복사용시 가스주입라인(4)에 이물질 등이 막혀서 냉각가스가 공급되지 못하고, 따라서 충분한 냉각이 이루어지지 못하는 경우가 발생하게 되는데, 이와 같은 상태를 확인할 방법이 없어서 조치를 취하지 못하는 문제점이 있었다.However, the cooling device of the conventional semiconductor wafer etching equipment as described above may not be supplied with the cooling gas due to clogging of foreign matters in the gas injection line 4 during long-term repeated use, and thus may not be sufficiently cooled. There was a problem that there was no way to check the status, so no action was taken.
상기와 같은 문제점을 감안하여 안출한 본 고안의 목적은 가스주입라인으로 냉각가스가 흐르지 않는 경우에 이를 감지하여 조치를 취할 수 있도록 하는데 적합한 반도체 웨이퍼 식각장비의 냉각장치를 제공함에 있다.The object of the present invention devised in view of the above problems is to provide a cooling device of a semiconductor wafer etching equipment suitable to be able to detect and take action when the cooling gas does not flow into the gas injection line.
도 1 은 종래 냉각장치가 구비된 반도체 웨이퍼 식각장비의 구성을 개략적으로 보인 배관도.1 is a schematic diagram illustrating a configuration of a semiconductor wafer etching apparatus equipped with a conventional cooling device.
도 2 는 본 고안 냉각장치가 구비된 반도체 웨이퍼 식각장비의 구성을 개략적으로 보인 배관도.Figure 2 is a schematic diagram showing the configuration of the semiconductor wafer etching equipment equipped with the present invention cooling device.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
12 : 일렉트로 스태틱척13 : 공간부12: electrostatic chuck 13: space part
14 : 가스주입라인15 : 가스배출라인14 gas injection line 15 gas discharge line
16 : 유량조절기17 : 압력게이지16 flow controller 17 pressure gauge
18 : 펌프19 : 압력감지기18 pump 19 pressure sensor
상기와 같은 본 고안의 목적을 달성하기 위하여 일렉트로 스태틱 척의 상면에 형성되는 공간부에 연결설치되며 냉각가스를 주입하기 위한 가스주입라인과, 그 가스주입라인 상에 설치되며 가스의 흐르는 양을 조절하기 위한 유량조절기와, 상기 가스주입라인 상에 설치되며 가스주입라인으로 흐르는 가스의 압력을 확인하기 위한 압력게이지와, 상기 일렉트로 스태틱 척의 상면에 형성되는 공간부에 연결설치되며 냉각가스를 배출하기 위한 가스배출라인과, 그 가스배출라인의 단부에 설치되며 냉각가스를 펌핑하기 위한 펌프와, 상기 가스배출라인 상에 설치되며 가스배출라인으로 배출되는 가스의 압력을 감지하여 가스주입라인의 막힘 유, 무를 확인하기 위한 압력감지기를 포함하여서 구성된 것을 특징으로 하는 반도체 웨이퍼 식각장비의 냉각장치가 제공된다.In order to achieve the object of the present invention as described above is connected to the space formed on the upper surface of the electrostatic chuck gas injection line for injecting cooling gas, and installed on the gas injection line to adjust the amount of gas flowing A flow regulator for the gas, a pressure gauge for checking the pressure of the gas flowing on the gas injection line, and a space part formed on the upper surface of the electrostatic chuck, for discharging the cooling gas. A discharge line, a pump installed at the end of the gas discharge line to pump cooling gas, and a gas discharge line installed on the gas discharge line to sense the pressure of the gas discharged to the gas discharge line to detect whether or not the gas injection line is blocked. Cooling of semiconductor wafer etching equipment, characterized in that it comprises a pressure sensor for checking Value is provided.
이하, 상기와 같이 구성되는 본 고안 반도체 웨이퍼 식각장비의 냉각장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, the cooling device of the inventive semiconductor wafer etching equipment configured as described above in more detail as follows.
도 2는 본 고안 냉각장치가 구비된 반도체 웨이퍼 식각장비의 구성을 개략적으로 보인 배관도로서, 도시된 바와 같이, 챔버(11)의 내측에 웨이퍼(W)를 고정시키기 위한 일렉트로 스태틱 척(12)이 설치되고, 그 일렉트로 스태틱 척(12)의 상단부에 형성되는 공간부(13)의 하방으로는 가스주입라인(14)이 설치되며, 다른 하방으로는 가스배출라인(15)이 설치된다.FIG. 2 is a piping diagram schematically showing the configuration of a semiconductor wafer etching apparatus equipped with the present invention cooling apparatus. As shown in FIG. The gas injection line 14 is provided below the space 13 formed in the upper end of the electrostatic chuck 12, and the gas discharge line 15 is provided below the other.
그리고, 상기 가스주입라인(14) 상에는 가스의 흐르는 양을 조절하기 위한 유량조절기(16)와 압력을 측정하기 위한 압력게이지(17)가 설치되고, 상기 가스배출라인(15)의 하단부에는 냉각가스를 펌핑하기 위한 펌프(18)가 설치되며, 상기 가스배출라인(15) 상에는 냉각가스의 배출되는 상태를 감지하기 위한 압력감지기(19)가 설치된다.In addition, the gas injection line 14 is provided with a flow regulator 16 for adjusting the amount of gas flowing and a pressure gauge 17 for measuring the pressure, the cooling gas at the lower end of the gas discharge line 15 A pump 18 for pumping the pump 18 is installed, and a pressure sensor 19 for detecting a discharge state of the cooling gas is installed on the gas discharge line 15.
상기 가스배출라인(15)은 가스주입라인(14)보다 굵기가 작은 미세관을 사용하는 것이 바람직하며, 공정진행시 가스배출라인(15)으로 냉각가스가 소량씩 배출되도록 구성된다.The gas discharge line 15 preferably uses a micro tube having a smaller thickness than the gas injection line 14, and is configured to discharge a small amount of cooling gas into the gas discharge line 15 during the process.
도면중 미설명부호 V1, V2, V3, V4, V5는 제1/제2/제3/제4/제5 밸브이다.In the drawings, reference numerals V1, V2, V3, V4, and V5 denote first, second, third, fourth and fifth valves.
상기와 같이 구성되는 본 발명 냉각장치가 구비된 반도체 웨이퍼 식각장비의 동작을 설명하면 다음과 같다.Referring to the operation of the semiconductor wafer etching equipment with a cooling device of the present invention configured as described above are as follows.
먼저, 챔버(11)의 내측에 설치되어 있는 일렉트로 스태틱 척(12)의 상면에 식각하고자하는 웨이퍼(W)를 고정시킨다. 이와 같은 상태에서 챔버(11)의 내측온도를 약 80℃ 정도로 유지시키고, 챔버(11)의 내측에 공정가스를 주입하면서, 전원을 인가하면 챔버(11)의 내측에 플라즈마가 발생하여 식각이 진행된다.First, the wafer W to be etched is fixed to the upper surface of the electrostatic chuck 12 provided inside the chamber 11. In this state, while maintaining the inner temperature of the chamber 11 to about 80 ℃, injecting the process gas into the chamber 11, when the power is applied, plasma is generated inside the chamber 11, the etching proceeds do.
상기와 같이 식각이 진행되면 웨이퍼(W)에 열이 발생하는데, 이때 가스주입라인(14)으로 헬륨가스를 공급하여 공간부(13)로 주입함으로서 웨이퍼(W)를 냉각하게 된다. 그리고, 상기와 같이 공간부(13)에 주입되어 웨이퍼(W)를 냉각하는 냉각가스는 미세관인 가스배출라인(15)의 단부에 설치된 펌프(18)에 의해 펌핑되어 소량씩 가스배출라인(15)를 통하여 배출된다. 이때, 상기 가스배출라인(15) 상에 설치되어 있는 압력감지기(19)에 의해 가스배출라인(15)으로 흐르는 냉각가스의 압력이 계속 확인이 되며, 만약에 상기 가스주입라인(14)이 이물질 등에 의하여 막혀서 가스공급이 원활치 못할 경우에는 상기 압력감지기(19)의 가스배출압력 값이 차이가 발생하므로 이를 확인한 후 장비를 멈추고 조치를 취하면 된다.When etching proceeds as described above, heat is generated in the wafer W. At this time, helium gas is supplied to the gas injection line 14 to be injected into the space 13 to cool the wafer W. As described above, the cooling gas injected into the space 13 to cool the wafer W is pumped by the pump 18 installed at the end of the gas discharge line 15, which is a micro tube, and the gas discharge line 15 is provided in small amounts. Is discharged through). At this time, the pressure of the cooling gas flowing to the gas discharge line 15 is continuously checked by the pressure sensor 19 installed on the gas discharge line 15, and if the gas injection line 14 is foreign matter If the gas supply is not smooth due to the clogging, etc., there is a difference in the gas discharge pressure value of the pressure sensor 19, so after checking this, stop the equipment and take action.
그리고, 상기와 같이 냉각가스가 가스배출라인(15)으로 미량 배출되는 양만큼 유량조절기(16)의 일시적인 동작을 통하여 가스주입라인(14)으로 냉각가스를 공급한다.Then, the cooling gas is supplied to the gas injection line 14 through the temporary operation of the flow controller 16 by the amount of the cooling gas is discharged to the gas discharge line 15 as described above.
이상에서 상세히 설명한 바와 같이 본 고안 반도체 웨이퍼 식각장비의 냉각장치는 냉각가스를 배출하는 가스배출라인 상에 압력을 감지하기 위한 압력감지기를 설치하여, 가스배출라인으로 흐르는 냉각가스의 배출압력을 측정함으로서, 이물질 등에 의하여 가스주입라인이 막힌 경우에 압력게이지에 나타나는 압력값의 차이를 확인할 수 있게되어 적절한 조치를 취할 수 있는 효과가 있다.As described in detail above, the cooling device of the inventive semiconductor wafer etching equipment is provided with a pressure sensor for detecting pressure on the gas discharge line for discharging the cooling gas, thereby measuring the discharge pressure of the cooling gas flowing through the gas discharge line. When the gas injection line is clogged by foreign matters, it is possible to check the difference in the pressure value appearing in the pressure gauge, so that appropriate measures can be taken.
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| Application Number | Priority Date | Filing Date | Title |
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| KR2019960047522U KR200156805Y1 (en) | 1996-12-11 | 1996-12-11 | Refrigeration apparatus for semiconductor wafer |
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| KR2019960047522U KR200156805Y1 (en) | 1996-12-11 | 1996-12-11 | Refrigeration apparatus for semiconductor wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030024363A (en) * | 2001-09-18 | 2003-03-26 | 주성엔지니어링(주) | Electrostatic chuck and he circulation system for electrostatic chuck |
| KR100460140B1 (en) * | 2001-12-12 | 2004-12-03 | 삼성전자주식회사 | Reaction gas suppling apparatus for semiconductor processing and its clogging test methods to test an injection valve clogged up reaction gas |
| KR100599073B1 (en) * | 1999-08-31 | 2006-07-12 | 삼성전자주식회사 | Backside gas supply system for plasma treatment system |
| KR100724205B1 (en) * | 2002-12-30 | 2007-05-31 | 동부일렉트로닉스 주식회사 | Helium gas supply system of an etcher |
| KR100786583B1 (en) * | 2007-02-15 | 2007-12-21 | 유정호 | Apparatus for cooling wafer chuck of chamber |
-
1996
- 1996-12-11 KR KR2019960047522U patent/KR200156805Y1/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100599073B1 (en) * | 1999-08-31 | 2006-07-12 | 삼성전자주식회사 | Backside gas supply system for plasma treatment system |
| KR20030024363A (en) * | 2001-09-18 | 2003-03-26 | 주성엔지니어링(주) | Electrostatic chuck and he circulation system for electrostatic chuck |
| KR100460140B1 (en) * | 2001-12-12 | 2004-12-03 | 삼성전자주식회사 | Reaction gas suppling apparatus for semiconductor processing and its clogging test methods to test an injection valve clogged up reaction gas |
| KR100724205B1 (en) * | 2002-12-30 | 2007-05-31 | 동부일렉트로닉스 주식회사 | Helium gas supply system of an etcher |
| KR100786583B1 (en) * | 2007-02-15 | 2007-12-21 | 유정호 | Apparatus for cooling wafer chuck of chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| KR200156805Y1 (en) | 1999-09-01 |
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