KR102979171B1 - 대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법 - Google Patents

대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법

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KR102979171B1
KR102979171B1 KR1020227044577A KR20227044577A KR102979171B1 KR 102979171 B1 KR102979171 B1 KR 102979171B1 KR 1020227044577 A KR1020227044577 A KR 1020227044577A KR 20227044577 A KR20227044577 A KR 20227044577A KR 102979171 B1 KR102979171 B1 KR 102979171B1
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substrate
group iii
layer
epitaxial growth
nitride
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KR20230031835A (ko
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요시히로 쿠보타
미노루 카와하라
마사토 야마다
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신에쓰 가가꾸 고교 가부시끼가이샤
신에쯔 한도타이 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
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    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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    • C04B41/85—Coating or impregnation with inorganic materials
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    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/18—Epitaxial-layer growth characterised by the substrate
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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Manufacturing & Machinery (AREA)
KR1020227044577A 2020-07-01 2021-05-18 대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법 Active KR102979171B1 (ko)

Applications Claiming Priority (3)

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JPJP-P-2020-114475 2020-07-01
JP2020114475A JP7618401B2 (ja) 2020-07-01 2020-07-01 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
PCT/JP2021/018734 WO2022004165A1 (ja) 2020-07-01 2021-05-18 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法

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KR20230031835A KR20230031835A (ko) 2023-03-07
KR102979171B1 true KR102979171B1 (ko) 2026-06-17

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US (1) US20230257905A1 (enExample)
EP (1) EP4177384A4 (enExample)
JP (1) JP7618401B2 (enExample)
KR (1) KR102979171B1 (enExample)
CN (1) CN115997050A (enExample)
TW (1) TWI900595B (enExample)
WO (1) WO2022004165A1 (enExample)

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JP7484773B2 (ja) * 2021-03-04 2024-05-16 信越半導体株式会社 紫外線発光素子用エピタキシャルウェーハの製造方法、紫外線発光素子用基板の製造方法及び紫外線発光素子用エピタキシャルウェーハ
JP7657530B2 (ja) * 2021-12-28 2025-04-07 信越化学工業株式会社 高特性エピタキシャル成長用基板とその製造方法
CN218351409U (zh) * 2022-06-30 2023-01-20 苏州晶湛半导体有限公司 一种半导体结构
JP2025007662A (ja) 2023-07-03 2025-01-17 信越半導体株式会社 ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法
JP7656661B2 (ja) * 2023-08-03 2025-04-03 Ｄｏｗａエレクトロニクス株式会社 ＡｌＮテンプレート基板およびその製造方法
CN117476831B (zh) * 2023-12-20 2024-03-19 青禾晶元(晋城)半导体材料有限公司 Led外延片及其制备方法、led芯片及其制备方法
JP2026007507A (ja) * 2024-07-03 2026-01-16 信越化学工業株式会社 Ｉｉｉ族窒化物エピタキシャル成長用基板、その製造方法、並びにそれを用いたエピタキシャル膜および半導体デバイスの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004336079A (ja) * 2004-08-16 2004-11-25 Hoya Corp 化合物単結晶の製造方法
JP2008538658A (ja) * 2005-04-21 2008-10-30 エイオーネックス・テクノロジーズ・インコーポレイテッド 中間基板とその製造方法
US20090108297A1 (en) * 2007-10-24 2009-04-30 Sumitomo Electric Industries, Ltd. Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor
US20140070166A1 (en) * 2009-09-10 2014-03-13 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
US20180005827A1 (en) * 2016-06-13 2018-01-04 Quora Technology, Inc. Multi-deposition process for high quality gallium nitride device manufacturing
JP2018190988A (ja) * 2009-12-11 2018-11-29 ナショナル セミコンダクター コーポレーションＮａｔｉｏｎａｌ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏｒｐｏｒａｔｉｏｎ ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60164248A (ja) 1984-02-06 1985-08-27 Toshiba Corp 超音波診断装置
US9171909B2 (en) * 2008-08-04 2015-10-27 Goldeneye, Inc. Flexible semiconductor devices based on flexible freestanding epitaxial elements
JP4565042B1 (ja) 2009-04-22 2010-10-20 株式会社トクヤマ Ｉｉｉ族窒化物結晶基板の製造方法
EP2362412B1 (en) * 2010-02-19 2020-04-08 Samsung Electronics Co., Ltd. Method of growing nitride semiconductor
US10023974B2 (en) * 2012-12-18 2018-07-17 Rfhic Corporation Substrates for semiconductor devices
US9105621B2 (en) * 2012-12-20 2015-08-11 Imec Method for bonding of group III-nitride device-on-silicon and devices obtained thereof
JP2017114694A (ja) 2015-12-21 2017-06-29 信越化学工業株式会社 化合物半導体積層基板及びその製造方法、並びに半導体素子
TWI793755B (zh) 2016-06-14 2023-02-21 美商克若密斯股份有限公司 用於功率及rf應用的工程基板結構
JP7044161B2 (ja) * 2018-08-09 2022-03-30 信越化学工業株式会社 ＧａＮ積層基板の製造方法
WO2021250991A1 (ja) * 2020-06-09 2021-12-16 信越化学工業株式会社 Ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004336079A (ja) * 2004-08-16 2004-11-25 Hoya Corp 化合物単結晶の製造方法
JP2008538658A (ja) * 2005-04-21 2008-10-30 エイオーネックス・テクノロジーズ・インコーポレイテッド 中間基板とその製造方法
US20090108297A1 (en) * 2007-10-24 2009-04-30 Sumitomo Electric Industries, Ltd. Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor
US20140070166A1 (en) * 2009-09-10 2014-03-13 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
JP2018190988A (ja) * 2009-12-11 2018-11-29 ナショナル セミコンダクター コーポレーションＮａｔｉｏｎａｌ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏｒｐｏｒａｔｉｏｎ ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償
US20180005827A1 (en) * 2016-06-13 2018-01-04 Quora Technology, Inc. Multi-deposition process for high quality gallium nitride device manufacturing

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