KR102956641B1 - 이미지 센서 - Google Patents

이미지 센서

Info

Publication number
KR102956641B1
KR102956641B1 KR1020210125031A KR20210125031A KR102956641B1 KR 102956641 B1 KR102956641 B1 KR 102956641B1 KR 1020210125031 A KR1020210125031 A KR 1020210125031A KR 20210125031 A KR20210125031 A KR 20210125031A KR 102956641 B1 KR102956641 B1 KR 102956641B1
Authority
KR
South Korea
Prior art keywords
pixel group
separation pattern
pattern
disposed
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020210125031A
Other languages
English (en)
Korean (ko)
Other versions
KR20230041427A (ko
Inventor
박해용
최성수
박종은
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020210125031A priority Critical patent/KR102956641B1/ko
Priority to US17/834,318 priority patent/US12557417B2/en
Priority to JP2022137001A priority patent/JP2023044647A/ja
Priority to CN202211121673.3A priority patent/CN115831990A/zh
Priority to CN202511954957.4A priority patent/CN121908660A/zh
Publication of KR20230041427A publication Critical patent/KR20230041427A/ko
Priority to US19/409,173 priority patent/US20260107598A1/en
Priority to JP2025233414A priority patent/JP2026035852A/ja
Application granted granted Critical
Publication of KR102956641B1 publication Critical patent/KR102956641B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
KR1020210125031A 2021-09-17 2021-09-17 이미지 센서 Active KR102956641B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020210125031A KR102956641B1 (ko) 2021-09-17 2021-09-17 이미지 센서
US17/834,318 US12557417B2 (en) 2021-09-17 2022-06-07 Image sensor including a ground region shared by pixels
JP2022137001A JP2023044647A (ja) 2021-09-17 2022-08-30 イメージセンサー
CN202511954957.4A CN121908660A (zh) 2021-09-17 2022-09-15 图像传感器
CN202211121673.3A CN115831990A (zh) 2021-09-17 2022-09-15 图像传感器
US19/409,173 US20260107598A1 (en) 2021-09-17 2025-12-04 Image sensor including a ground region shared by pixels
JP2025233414A JP2026035852A (ja) 2021-09-17 2025-12-05 イメージセンサー

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020210125031A KR102956641B1 (ko) 2021-09-17 2021-09-17 이미지 센서

Publications (2)

Publication Number Publication Date
KR20230041427A KR20230041427A (ko) 2023-03-24
KR102956641B1 true KR102956641B1 (ko) 2026-04-24

Family

ID=85523625

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210125031A Active KR102956641B1 (ko) 2021-09-17 2021-09-17 이미지 센서

Country Status (4)

Country Link
US (2) US12557417B2 (enExample)
JP (2) JP2023044647A (enExample)
KR (1) KR102956641B1 (enExample)
CN (2) CN115831990A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12317625B2 (en) * 2021-10-21 2025-05-27 Magvision Semiconductor (Beijing) Inc. Image sensor pixel with deep trench isolation structure
US12176364B2 (en) * 2021-12-27 2024-12-24 Omnivision Technologies, Inc. Passivation-enhanced image sensor and surface-passivation method
EP4684918A4 (en) 2023-03-20 2026-05-27 Ihi Corp DEVICE FOR THE REMOVAL AND METHOD FOR THE REMOVAL OF A COMPONENT FROM A BODY

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170345853A1 (en) * 2016-05-26 2017-11-30 Canon Kabushiki Kaisha Imaging device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8390089B2 (en) 2010-07-27 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with deep trench isolation structure
JP6363857B2 (ja) * 2014-03-24 2018-07-25 キヤノン株式会社 撮像素子、撮像装置、画像処理方法、並びにプログラム
KR102268714B1 (ko) 2014-06-23 2021-06-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102563588B1 (ko) 2016-08-16 2023-08-03 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102551489B1 (ko) 2017-10-13 2023-07-04 삼성전자주식회사 이미지 센서
US10498947B2 (en) * 2017-10-30 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor including light shielding layer and patterned dielectric layer
US11075242B2 (en) 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
KR102531355B1 (ko) 2018-03-20 2023-05-10 삼성전자주식회사 이미지 센서
KR102639539B1 (ko) * 2018-11-05 2024-02-26 삼성전자주식회사 이미지 센서 및 이의 형성 방법
KR102710378B1 (ko) * 2019-07-25 2024-09-26 삼성전자주식회사 자동 초점 이미지 센서의 픽셀 어레이 및 이를 포함하는 자동 초점 이미지 센서
KR102721028B1 (ko) * 2019-11-08 2024-10-25 삼성전자주식회사 이미지 센서
KR102818280B1 (ko) * 2019-12-13 2025-06-11 삼성전자주식회사 이미지 센서
KR102770166B1 (ko) * 2019-12-26 2025-02-24 삼성전자주식회사 이미지 센서 및 그 제조방법
US11955496B2 (en) * 2020-09-29 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Back-side deep trench isolation structure for image sensor
KR20230001778A (ko) * 2021-06-29 2023-01-05 삼성전자주식회사 더블 트렌치를 포함하는 픽셀 분리 구조물을 포함하는 이미지 센서
US12294011B2 (en) * 2021-07-28 2025-05-06 Magvision Semiconductor (Beijing) Inc. Image sensor pixel with deep trench isolation structure
US12382740B2 (en) * 2021-12-30 2025-08-05 Omnivision Technologies, Inc. Image sensor for infrared sensing and fabrication thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170345853A1 (en) * 2016-05-26 2017-11-30 Canon Kabushiki Kaisha Imaging device

Also Published As

Publication number Publication date
JP2023044647A (ja) 2023-03-30
US20230092590A1 (en) 2023-03-23
KR20230041427A (ko) 2023-03-24
US20260107598A1 (en) 2026-04-16
JP2026035852A (ja) 2026-03-04
CN115831990A (zh) 2023-03-21
US12557417B2 (en) 2026-02-17
CN121908660A (zh) 2026-04-21

Similar Documents

Publication Publication Date Title
KR102652444B1 (ko) 이미지 센서
KR102702256B1 (ko) 이미지 센서
US12148780B2 (en) Image sensor
US20260107598A1 (en) Image sensor including a ground region shared by pixels
US20230282667A1 (en) Image sensor
US12376407B2 (en) Image sensor
CN115548039A (zh) 包括具有双沟槽的像素隔离结构的图像传感器
KR20230060051A (ko) 이미지 센서 및 이의 제조방법
CN118866919A (zh) 图像传感器及其制造方法
CN118073383A (zh) 图像传感器
KR20240123670A (ko) 이미지 센서 및 그 제조방법
KR20240062818A (ko) 이미지 센서 및 이의 제조 방법
CN115692440A (zh) 图像传感器
US20240421167A1 (en) Image sensor
KR20250163172A (ko) 이미지 센서
KR20250068921A (ko) 이미지 센서
JP2024132977A (ja) イメージセンサー及びその製造方法
KR20240072857A (ko) 이미지 센서
JP2024000963A (ja) イメージセンサー
CN116705809A (zh) 图像传感器
KR20240012971A (ko) 이미지 센서 및 이의 제조 방법
CN115763503A (zh) 图像传感器及制造其的方法
US20250169215A1 (en) Image sensor and method of fabricating the same
KR20260020818A (ko) 이미지 센서
JP2025122625A (ja) イメージセンサー

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U11-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000