JP2023044647A - イメージセンサー - Google Patents

イメージセンサー Download PDF

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Publication number
JP2023044647A
JP2023044647A JP2022137001A JP2022137001A JP2023044647A JP 2023044647 A JP2023044647 A JP 2023044647A JP 2022137001 A JP2022137001 A JP 2022137001A JP 2022137001 A JP2022137001 A JP 2022137001A JP 2023044647 A JP2023044647 A JP 2023044647A
Authority
JP
Japan
Prior art keywords
pixel
pattern
pixels
substrate
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022137001A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023044647A5 (enExample
Inventor
海龍 朴
Haeyong Park
性洙 崔
Sungsoo Choi
鍾銀 朴
Jong-Eun Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2023044647A publication Critical patent/JP2023044647A/ja
Publication of JP2023044647A5 publication Critical patent/JP2023044647A5/ja
Priority to JP2025233414A priority Critical patent/JP2026035852A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP2022137001A 2021-09-17 2022-08-30 イメージセンサー Pending JP2023044647A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025233414A JP2026035852A (ja) 2021-09-17 2025-12-05 イメージセンサー

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2021-0125031 2021-09-17
KR1020210125031A KR102956641B1 (ko) 2021-09-17 2021-09-17 이미지 센서

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025233414A Division JP2026035852A (ja) 2021-09-17 2025-12-05 イメージセンサー

Publications (2)

Publication Number Publication Date
JP2023044647A true JP2023044647A (ja) 2023-03-30
JP2023044647A5 JP2023044647A5 (enExample) 2025-08-20

Family

ID=85523625

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022137001A Pending JP2023044647A (ja) 2021-09-17 2022-08-30 イメージセンサー
JP2025233414A Pending JP2026035852A (ja) 2021-09-17 2025-12-05 イメージセンサー

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025233414A Pending JP2026035852A (ja) 2021-09-17 2025-12-05 イメージセンサー

Country Status (4)

Country Link
US (2) US12557417B2 (enExample)
JP (2) JP2023044647A (enExample)
KR (1) KR102956641B1 (enExample)
CN (2) CN115831990A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024195698A1 (ja) 2023-03-20 2024-09-26 株式会社Ihi 取外し装置および本体から部品を取り外す方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12317625B2 (en) * 2021-10-21 2025-05-27 Magvision Semiconductor (Beijing) Inc. Image sensor pixel with deep trench isolation structure
US12176364B2 (en) * 2021-12-27 2024-12-24 Omnivision Technologies, Inc. Passivation-enhanced image sensor and surface-passivation method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8390089B2 (en) 2010-07-27 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor with deep trench isolation structure
JP6363857B2 (ja) * 2014-03-24 2018-07-25 キヤノン株式会社 撮像素子、撮像装置、画像処理方法、並びにプログラム
KR102268714B1 (ko) 2014-06-23 2021-06-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP6738200B2 (ja) * 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
KR102563588B1 (ko) 2016-08-16 2023-08-03 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102551489B1 (ko) 2017-10-13 2023-07-04 삼성전자주식회사 이미지 센서
US10498947B2 (en) * 2017-10-30 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor including light shielding layer and patterned dielectric layer
US11075242B2 (en) 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
KR102531355B1 (ko) 2018-03-20 2023-05-10 삼성전자주식회사 이미지 센서
KR102639539B1 (ko) * 2018-11-05 2024-02-26 삼성전자주식회사 이미지 센서 및 이의 형성 방법
KR102710378B1 (ko) * 2019-07-25 2024-09-26 삼성전자주식회사 자동 초점 이미지 센서의 픽셀 어레이 및 이를 포함하는 자동 초점 이미지 센서
KR102721028B1 (ko) * 2019-11-08 2024-10-25 삼성전자주식회사 이미지 센서
KR102818280B1 (ko) * 2019-12-13 2025-06-11 삼성전자주식회사 이미지 센서
KR102770166B1 (ko) * 2019-12-26 2025-02-24 삼성전자주식회사 이미지 센서 및 그 제조방법
US11955496B2 (en) * 2020-09-29 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Back-side deep trench isolation structure for image sensor
KR20230001778A (ko) * 2021-06-29 2023-01-05 삼성전자주식회사 더블 트렌치를 포함하는 픽셀 분리 구조물을 포함하는 이미지 센서
US12294011B2 (en) * 2021-07-28 2025-05-06 Magvision Semiconductor (Beijing) Inc. Image sensor pixel with deep trench isolation structure
US12382740B2 (en) * 2021-12-30 2025-08-05 Omnivision Technologies, Inc. Image sensor for infrared sensing and fabrication thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024195698A1 (ja) 2023-03-20 2024-09-26 株式会社Ihi 取外し装置および本体から部品を取り外す方法
EP4684918A1 (en) 2023-03-20 2026-01-28 IHI Corporation Removal device and method for removing component from body

Also Published As

Publication number Publication date
US20230092590A1 (en) 2023-03-23
KR102956641B1 (ko) 2026-04-24
KR20230041427A (ko) 2023-03-24
US20260107598A1 (en) 2026-04-16
JP2026035852A (ja) 2026-03-04
CN115831990A (zh) 2023-03-21
US12557417B2 (en) 2026-02-17
CN121908660A (zh) 2026-04-21

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