KR102934095B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents
플라즈마 처리 장치 및 플라즈마 처리 방법Info
- Publication number
- KR102934095B1 KR102934095B1 KR1020210092221A KR20210092221A KR102934095B1 KR 102934095 B1 KR102934095 B1 KR 102934095B1 KR 1020210092221 A KR1020210092221 A KR 1020210092221A KR 20210092221 A KR20210092221 A KR 20210092221A KR 102934095 B1 KR102934095 B1 KR 102934095B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- frequency power
- edge ring
- plasma processing
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
- H10P72/722—Details of electrostatic chucks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2020-122121 | 2020-07-16 | ||
| JP2020122121A JP7536540B2 (ja) | 2020-07-16 | 2020-07-16 | プラズマ処理装置及びプラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220009892A KR20220009892A (ko) | 2022-01-25 |
| KR102934095B1 true KR102934095B1 (ko) | 2026-03-04 |
Family
ID=79293568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020210092221A Active KR102934095B1 (ko) | 2020-07-16 | 2021-07-14 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11646181B2 (https=) |
| JP (1) | JP7536540B2 (https=) |
| KR (1) | KR102934095B1 (https=) |
| CN (2) | CN121306894A (https=) |
| TW (1) | TW202209934A (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7536540B2 (ja) * | 2020-07-16 | 2024-08-20 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP7534235B2 (ja) * | 2021-02-01 | 2024-08-14 | 東京エレクトロン株式会社 | フィルタ回路及びプラズマ処理装置 |
| JP7727714B2 (ja) * | 2021-03-23 | 2025-08-21 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP7719860B2 (ja) * | 2021-04-23 | 2025-08-06 | 東京エレクトロン株式会社 | プラズマ処理装置及び基板処理方法 |
| KR102936883B1 (ko) * | 2021-08-23 | 2026-03-11 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 플라스마 처리 방법 |
| TW202331780A (zh) * | 2021-09-15 | 2023-08-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置及電漿處理方法 |
| KR20250084933A (ko) * | 2022-09-30 | 2025-06-11 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 |
| CN120077480A (zh) * | 2023-09-29 | 2025-05-30 | 东京毅力科创株式会社 | 等离子体处理装置和基片处理系统 |
| WO2025069735A1 (ja) * | 2023-09-29 | 2025-04-03 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| WO2025182632A1 (ja) * | 2024-02-28 | 2025-09-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN120413399A (zh) * | 2025-04-25 | 2025-08-01 | 北京北方华创微电子装备有限公司 | 聚焦环电压控制方法、装置及半导体工艺设备 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1933362B1 (de) * | 2006-12-14 | 2011-04-13 | HÜTTINGER Elektronik GmbH + Co. KG | Bogenentladungs-Erkennungseinrichtung, Plasma-Leistungsversorgung und Verfahren zum Erkennen von Bogenentladungen |
| JP4833890B2 (ja) | 2007-03-12 | 2011-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ分布補正方法 |
| US9039871B2 (en) * | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
| JP5281309B2 (ja) * | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| JP5063520B2 (ja) * | 2008-08-01 | 2012-10-31 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP6224958B2 (ja) * | 2013-02-20 | 2017-11-01 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| WO2014164300A1 (en) * | 2013-03-13 | 2014-10-09 | Applied Materials, Inc | Pulsed pc plasma etching process and apparatus |
| US9324698B2 (en) * | 2013-08-13 | 2016-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-chip structure and method of forming same |
| US10047438B2 (en) * | 2014-06-10 | 2018-08-14 | Lam Research Corporation | Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas |
| KR20170024922A (ko) * | 2015-08-26 | 2017-03-08 | 삼성전자주식회사 | 플라즈마 발생 장치 |
| JP6441994B2 (ja) * | 2017-05-16 | 2018-12-19 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
| JP6826955B2 (ja) * | 2017-06-14 | 2021-02-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP7061922B2 (ja) * | 2018-04-27 | 2022-05-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP7296699B2 (ja) * | 2018-07-02 | 2023-06-23 | 東京エレクトロン株式会社 | ガス供給システム、プラズマ処理装置およびガス供給システムの制御方法 |
| US10854427B2 (en) * | 2018-08-30 | 2020-12-01 | Applied Materials, Inc. | Radio frequency (RF) pulsing impedance tuning with multiplier mode |
| US10672589B2 (en) * | 2018-10-10 | 2020-06-02 | Tokyo Electron Limited | Plasma processing apparatus and control method |
| JP6762410B2 (ja) * | 2018-10-10 | 2020-09-30 | 東京エレクトロン株式会社 | プラズマ処理装置及び制御方法 |
| JP7481823B2 (ja) * | 2018-11-05 | 2024-05-13 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US11361947B2 (en) * | 2019-01-09 | 2022-06-14 | Tokyo Electron Limited | Apparatus for plasma processing and method of etching |
| JP7462383B2 (ja) * | 2019-04-15 | 2024-04-05 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理装置 |
| TWI869392B (zh) * | 2019-04-15 | 2025-01-11 | 美商應用材料股份有限公司 | 處理基板的方法 |
| US20210210355A1 (en) * | 2020-01-08 | 2021-07-08 | Tokyo Electron Limited | Methods of Plasma Processing Using a Pulsed Electron Beam |
| JP7536540B2 (ja) * | 2020-07-16 | 2024-08-20 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2020
- 2020-07-16 JP JP2020122121A patent/JP7536540B2/ja active Active
-
2021
- 2021-07-02 TW TW110124343A patent/TW202209934A/zh unknown
- 2021-07-08 CN CN202511470279.4A patent/CN121306894A/zh active Pending
- 2021-07-08 CN CN202110773998.9A patent/CN113948364B/zh active Active
- 2021-07-14 KR KR1020210092221A patent/KR102934095B1/ko active Active
- 2021-07-15 US US17/376,771 patent/US11646181B2/en active Active
-
2023
- 2023-04-19 US US18/136,692 patent/US12603258B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US11646181B2 (en) | 2023-05-09 |
| KR20220009892A (ko) | 2022-01-25 |
| CN113948364B (zh) | 2025-10-31 |
| JP2022018776A (ja) | 2022-01-27 |
| US12603258B2 (en) | 2026-04-14 |
| US20230260766A1 (en) | 2023-08-17 |
| US20220020576A1 (en) | 2022-01-20 |
| JP7536540B2 (ja) | 2024-08-20 |
| TW202209934A (zh) | 2022-03-01 |
| CN121306894A (zh) | 2026-01-09 |
| CN113948364A (zh) | 2022-01-18 |
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