KR102924893B1 - 단결정 구상 카본 나노 입자의 제조 방법 - Google Patents

단결정 구상 카본 나노 입자의 제조 방법

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Publication number
KR102924893B1
KR102924893B1 KR1020247031399A KR20247031399A KR102924893B1 KR 102924893 B1 KR102924893 B1 KR 102924893B1 KR 1020247031399 A KR1020247031399 A KR 1020247031399A KR 20247031399 A KR20247031399 A KR 20247031399A KR 102924893 B1 KR102924893 B1 KR 102924893B1
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South Korea
Prior art keywords
carbon nanoparticles
spherical carbon
crystal spherical
manufacturing
crystal
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English (en)
Korean (ko)
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KR20240154030A (ko
Inventor
히데키 오카와
마사카즈 에노무라
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엠. 테크닉 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/65—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing carbon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
    • H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
    • H01M4/587—Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
    • H01M2004/027—Negative electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrochemistry (AREA)
  • Nanotechnology (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020247031399A 2022-09-14 2022-09-30 단결정 구상 카본 나노 입자의 제조 방법 Active KR102924893B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2022/034481 2022-09-14
PCT/JP2022/034481 WO2024057464A1 (ja) 2022-09-14 2022-09-14 単結晶球状カーボンナノ粒子
PCT/JP2022/036803 WO2024057555A1 (ja) 2022-09-14 2022-09-30 単結晶球状カーボンナノ粒子の製造方法

Publications (2)

Publication Number Publication Date
KR20240154030A KR20240154030A (ko) 2024-10-24
KR102924893B1 true KR102924893B1 (ko) 2026-02-10

Family

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KR1020247031399A Active KR102924893B1 (ko) 2022-09-14 2022-09-30 단결정 구상 카본 나노 입자의 제조 방법

Country Status (6)

Country Link
US (2) US20260110111A1 (https=)
EP (1) EP4588892A1 (https=)
JP (2) JPWO2024057464A1 (https=)
KR (1) KR102924893B1 (https=)
CN (1) CN119095794A (https=)
WO (2) WO2024057464A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105860968A (zh) 2016-04-29 2016-08-17 中国科学院理化技术研究所 一种单层单晶石墨烯量子点及其制备方法
US20190035635A1 (en) 2017-07-27 2019-01-31 Samsung Electronics Co., Ltd. Hardmask composition, method of forming pattern by using the hardmask composition, and hardmask formed using the hardmask composition
US20190315626A1 (en) 2018-04-12 2019-10-17 Korea Advanced Institute Of Science And Technology Graphene-based compound, preparation method thereof, and single-phase composition for preparing graphene-based compound and graphene quantum dot

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8974986B2 (en) 2007-07-06 2015-03-10 M. Technique Co., Ltd. Method for producing metal-supported carbon, method for producing crystals consisting of fullerene molecules and fullerene nanowhisker/nanofiber nanotubes, and apparatus for producing the same
CN101855713B (zh) 2007-08-09 2013-02-13 M技术株式会社 半导体微粒的制造方法及其微粒
JP5648986B2 (ja) 2007-11-02 2015-01-07 エム・テクニック株式会社 流体処理装置及び流体処理方法
JP7134484B2 (ja) 2016-02-05 2022-09-12 ユニバーシティー オブ マイアミ 診断分析及び薬物送達のためのカーボンドット
KR101917425B1 (ko) * 2016-09-08 2018-11-09 동국대학교 산학협력단 가요성 광전극 제조방법, 상기 방법에 의해 제조된 광전극 및 상기 광전극을 포함한 염료감응 태양전지
CN110382663B (zh) 2017-03-09 2023-05-16 国立研究开发法人物质·材料研究机构 组合物、其制造方法及其用途
JP2019155349A (ja) 2018-03-12 2019-09-19 国立大学法人群馬大学 酸素還元触媒用炭素系複合体ならびにその製造方法および用途
JP2021183548A (ja) 2018-08-31 2021-12-02 日産化学株式会社 発光性ナノカーボン製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105860968A (zh) 2016-04-29 2016-08-17 中国科学院理化技术研究所 一种单层单晶石墨烯量子点及其制备方法
US20190035635A1 (en) 2017-07-27 2019-01-31 Samsung Electronics Co., Ltd. Hardmask composition, method of forming pattern by using the hardmask composition, and hardmask formed using the hardmask composition
US20190315626A1 (en) 2018-04-12 2019-10-17 Korea Advanced Institute Of Science And Technology Graphene-based compound, preparation method thereof, and single-phase composition for preparing graphene-based compound and graphene quantum dot

Also Published As

Publication number Publication date
WO2024057464A1 (ja) 2024-03-21
US20260110111A1 (en) 2026-04-23
EP4588892A1 (en) 2025-07-23
KR20240154030A (ko) 2024-10-24
JPWO2024057464A1 (https=) 2024-03-21
JPWO2024057555A1 (https=) 2024-03-21
WO2024057555A1 (ja) 2024-03-21
US20250389048A1 (en) 2025-12-25
CN119095794A (zh) 2024-12-06

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