JPWO2024057464A1 - - Google Patents
Info
- Publication number
- JPWO2024057464A1 JPWO2024057464A1 JP2024546610A JP2024546610A JPWO2024057464A1 JP WO2024057464 A1 JPWO2024057464 A1 JP WO2024057464A1 JP 2024546610 A JP2024546610 A JP 2024546610A JP 2024546610 A JP2024546610 A JP 2024546610A JP WO2024057464 A1 JPWO2024057464 A1 JP WO2024057464A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/65—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing carbon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrochemistry (AREA)
- Nanotechnology (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/034481 WO2024057464A1 (ja) | 2022-09-14 | 2022-09-14 | 単結晶球状カーボンナノ粒子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024057464A1 true JPWO2024057464A1 (https=) | 2024-03-21 |
| JPWO2024057464A5 JPWO2024057464A5 (https=) | 2025-06-30 |
Family
ID=90274610
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024546610A Pending JPWO2024057464A1 (https=) | 2022-09-14 | 2022-09-14 | |
| JP2024546684A Pending JPWO2024057555A1 (https=) | 2022-09-14 | 2022-09-30 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024546684A Pending JPWO2024057555A1 (https=) | 2022-09-14 | 2022-09-30 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20260110111A1 (https=) |
| EP (1) | EP4588892A1 (https=) |
| JP (2) | JPWO2024057464A1 (https=) |
| KR (1) | KR102924893B1 (https=) |
| CN (1) | CN119095794A (https=) |
| WO (2) | WO2024057464A1 (https=) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8974986B2 (en) | 2007-07-06 | 2015-03-10 | M. Technique Co., Ltd. | Method for producing metal-supported carbon, method for producing crystals consisting of fullerene molecules and fullerene nanowhisker/nanofiber nanotubes, and apparatus for producing the same |
| CN101855713B (zh) | 2007-08-09 | 2013-02-13 | M技术株式会社 | 半导体微粒的制造方法及其微粒 |
| JP5648986B2 (ja) | 2007-11-02 | 2015-01-07 | エム・テクニック株式会社 | 流体処理装置及び流体処理方法 |
| JP7134484B2 (ja) | 2016-02-05 | 2022-09-12 | ユニバーシティー オブ マイアミ | 診断分析及び薬物送達のためのカーボンドット |
| CN105860968B (zh) * | 2016-04-29 | 2018-05-08 | 中国科学院理化技术研究所 | 一种单层单晶石墨烯量子点及其制备方法 |
| KR101917425B1 (ko) * | 2016-09-08 | 2018-11-09 | 동국대학교 산학협력단 | 가요성 광전극 제조방법, 상기 방법에 의해 제조된 광전극 및 상기 광전극을 포함한 염료감응 태양전지 |
| CN110382663B (zh) | 2017-03-09 | 2023-05-16 | 国立研究开发法人物质·材料研究机构 | 组合物、其制造方法及其用途 |
| KR102433666B1 (ko) * | 2017-07-27 | 2022-08-18 | 삼성전자주식회사 | 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크 |
| JP2019155349A (ja) | 2018-03-12 | 2019-09-19 | 国立大学法人群馬大学 | 酸素還元触媒用炭素系複合体ならびにその製造方法および用途 |
| KR102217276B1 (ko) * | 2018-04-12 | 2021-02-19 | 한국과학기술원 | 그래핀계 화합물, 이의 제조방법, 그래핀계 화합물 제조용 단일상 조성물 및 그래핀 양자점 |
| JP2021183548A (ja) | 2018-08-31 | 2021-12-02 | 日産化学株式会社 | 発光性ナノカーボン製造方法 |
-
2022
- 2022-09-14 JP JP2024546610A patent/JPWO2024057464A1/ja active Pending
- 2022-09-14 US US19/111,689 patent/US20260110111A1/en active Pending
- 2022-09-14 WO PCT/JP2022/034481 patent/WO2024057464A1/ja not_active Ceased
- 2022-09-30 JP JP2024546684A patent/JPWO2024057555A1/ja active Pending
- 2022-09-30 EP EP22958873.6A patent/EP4588892A1/en active Pending
- 2022-09-30 CN CN202280095253.4A patent/CN119095794A/zh active Pending
- 2022-09-30 US US18/867,303 patent/US20250389048A1/en active Pending
- 2022-09-30 KR KR1020247031399A patent/KR102924893B1/ko active Active
- 2022-09-30 WO PCT/JP2022/036803 patent/WO2024057555A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024057464A1 (ja) | 2024-03-21 |
| US20260110111A1 (en) | 2026-04-23 |
| KR102924893B1 (ko) | 2026-02-10 |
| EP4588892A1 (en) | 2025-07-23 |
| KR20240154030A (ko) | 2024-10-24 |
| JPWO2024057555A1 (https=) | 2024-03-21 |
| WO2024057555A1 (ja) | 2024-03-21 |
| US20250389048A1 (en) | 2025-12-25 |
| CN119095794A (zh) | 2024-12-06 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250312 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250901 |