KR102911143B1 - 고주파 전원 및 플라즈마 처리 장치 - Google Patents

고주파 전원 및 플라즈마 처리 장치

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Publication number
KR102911143B1
KR102911143B1 KR1020200008820A KR20200008820A KR102911143B1 KR 102911143 B1 KR102911143 B1 KR 102911143B1 KR 1020200008820 A KR1020200008820 A KR 1020200008820A KR 20200008820 A KR20200008820 A KR 20200008820A KR 102911143 B1 KR102911143 B1 KR 102911143B1
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KR
South Korea
Prior art keywords
frequency
power
frequency power
generate
plasma processing
Prior art date
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Application number
KR1020200008820A
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English (en)
Korean (ko)
Other versions
KR20200096734A (ko
Inventor
신지 구보타
다카시 도칸
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20200096734A publication Critical patent/KR20200096734A/ko
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Publication of KR102911143B1 publication Critical patent/KR102911143B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020200008820A 2019-02-05 2020-01-22 고주파 전원 및 플라즈마 처리 장치 Active KR102911143B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019018831A JP7122268B2 (ja) 2019-02-05 2019-02-05 プラズマ処理装置
JPJP-P-2019-018831 2019-02-05

Publications (2)

Publication Number Publication Date
KR20200096734A KR20200096734A (ko) 2020-08-13
KR102911143B1 true KR102911143B1 (ko) 2026-01-13

Family

ID=71837027

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200008820A Active KR102911143B1 (ko) 2019-02-05 2020-01-22 고주파 전원 및 플라즈마 처리 장치

Country Status (4)

Country Link
US (1) US11087960B2 (https=)
JP (1) JP7122268B2 (https=)
KR (1) KR102911143B1 (https=)
CN (1) CN111524781B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102950098B1 (ko) 2021-12-28 2026-04-09 가부시키가이샤 다이헨 고주파 전원 장치

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JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置
JP7201805B2 (ja) * 2020-08-27 2023-01-10 株式会社日立ハイテク プラズマ処理装置
TWI906346B (zh) * 2020-08-31 2025-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
JP2022159653A (ja) * 2021-04-05 2022-10-18 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
KR102803167B1 (ko) 2022-02-07 2025-05-07 주식회사 뉴파워 프라즈마 고주파 펄스 전원 장치 및 그의 운전 방법

Citations (1)

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Publication number Priority date Publication date Assignee Title
US20020115301A1 (en) * 1995-10-13 2002-08-22 Savas Stephen E. Pulsed plasma processing of semiconductor substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102950098B1 (ko) 2021-12-28 2026-04-09 가부시키가이샤 다이헨 고주파 전원 장치

Also Published As

Publication number Publication date
JP2020126776A (ja) 2020-08-20
KR20200096734A (ko) 2020-08-13
US20200251308A1 (en) 2020-08-06
US11087960B2 (en) 2021-08-10
JP7122268B2 (ja) 2022-08-19
CN111524781A (zh) 2020-08-11
CN111524781B (zh) 2024-06-14

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