KR102894013B1 - 감방사선성 수지 조성물 및 패턴 형성 방법 - Google Patents

감방사선성 수지 조성물 및 패턴 형성 방법

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Publication number
KR102894013B1
KR102894013B1 KR1020237006237A KR20237006237A KR102894013B1 KR 102894013 B1 KR102894013 B1 KR 102894013B1 KR 1020237006237 A KR1020237006237 A KR 1020237006237A KR 20237006237 A KR20237006237 A KR 20237006237A KR 102894013 B1 KR102894013 B1 KR 102894013B1
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group
radiation
acid
sensitive
carbon atoms
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Korean (ko)
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KR20230076124A (ko
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겐 마루야마
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제이에스알 가부시키가이샤
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    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
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    • C08F20/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F20/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16—Halogens
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    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
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    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
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    • C08F220/303—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one or more carboxylic moieties in the chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Materials For Photolithography (AREA)
KR1020237006237A 2020-09-28 2021-08-03 감방사선성 수지 조성물 및 패턴 형성 방법 Active KR102894013B1 (ko)

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JP2020162155 2020-09-28
JPJP-P-2020-162155 2020-09-28
JPJP-P-2021-015280 2021-02-02
JP2021015280 2021-02-02
PCT/JP2021/028755 WO2022064863A1 (ja) 2020-09-28 2021-08-03 感放射線性樹脂組成物及びパターン形成方法

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KR20230076124A KR20230076124A (ko) 2023-05-31
KR102894013B1 true KR102894013B1 (ko) 2025-12-03

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US (1) US20240004288A1 (https=)
JP (1) JP7800800B2 (https=)
KR (1) KR102894013B1 (https=)
TW (1) TWI882169B (https=)
WO (1) WO2022064863A1 (https=)

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JP2023062898A (ja) * 2021-10-22 2023-05-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物及び酸拡散制御剤
CN118451368A (zh) * 2021-12-10 2024-08-06 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法
JP2023168942A (ja) * 2022-05-16 2023-11-29 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物及び酸拡散制御剤
US20230384677A1 (en) * 2022-05-24 2023-11-30 Shin-Etsu Chemical Co., Ltd. Onium salt compound, polymer, resist composition, and patterning process
US20230393466A1 (en) * 2022-06-01 2023-12-07 Shin-Etsu Chemical Co., Ltd. Chemically amplified negative resist composition and resist pattern forming process
US20230393465A1 (en) * 2022-06-01 2023-12-07 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and resist pattern forming process
WO2024024691A1 (ja) * 2022-07-29 2024-02-01 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
KR20250121533A (ko) * 2022-12-13 2025-08-12 제이에스알 가부시키가이샤 감방사선성 조성물 및 레지스트 패턴 형성 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020098329A (ja) * 2018-12-14 2020-06-25 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP2020098330A (ja) * 2018-12-18 2020-06-25 信越化学工業株式会社 レジスト材料及びパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6512049B2 (ja) * 2015-09-15 2019-05-15 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR101960596B1 (ko) 2016-06-28 2019-07-15 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
JP6874635B2 (ja) * 2017-10-13 2021-05-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
CN112368640B (zh) * 2018-08-29 2025-02-07 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、电子器件的制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020098329A (ja) * 2018-12-14 2020-06-25 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP2020098330A (ja) * 2018-12-18 2020-06-25 信越化学工業株式会社 レジスト材料及びパターン形成方法

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