KR102761453B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

Info

Publication number
KR102761453B1
KR102761453B1 KR1020190158360A KR20190158360A KR102761453B1 KR 102761453 B1 KR102761453 B1 KR 102761453B1 KR 1020190158360 A KR1020190158360 A KR 1020190158360A KR 20190158360 A KR20190158360 A KR 20190158360A KR 102761453 B1 KR102761453 B1 KR 102761453B1
Authority
KR
South Korea
Prior art keywords
upper electrode
plasma processing
electrode
plasma
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190158360A
Other languages
English (en)
Korean (ko)
Other versions
KR20200067104A (ko
Inventor
토시야 츠카하라
슈헤이 야마베
코타 야치
테츠지 사토
요헤이 우치다
아유타 스즈키
요스케 타무라
히데토시 하나오카
쥰이치 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20200067104A publication Critical patent/KR20200067104A/ko
Application granted granted Critical
Publication of KR102761453B1 publication Critical patent/KR102761453B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020190158360A 2018-12-03 2019-12-02 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR102761453B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-226567 2018-12-03
JP2018226567A JP7142551B2 (ja) 2018-12-03 2018-12-03 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20200067104A KR20200067104A (ko) 2020-06-11
KR102761453B1 true KR102761453B1 (ko) 2025-02-03

Family

ID=70850601

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190158360A Active KR102761453B1 (ko) 2018-12-03 2019-12-02 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (5)

Country Link
US (1) US10847348B2 (https=)
JP (1) JP7142551B2 (https=)
KR (1) KR102761453B1 (https=)
CN (1) CN111261511B (https=)
TW (1) TWI853852B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7378276B2 (ja) * 2019-11-12 2023-11-13 東京エレクトロン株式会社 プラズマ処理装置
KR102793905B1 (ko) * 2020-08-14 2025-04-08 삼성전자주식회사 상부 전극 및 이를 포함하는 기판 처리 장치
JP2022048753A (ja) 2020-09-15 2022-03-28 キオクシア株式会社 半導体製造システム、半導体装置の製造方法、及び半導体装置
KR102787323B1 (ko) * 2020-09-24 2025-03-27 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US12338530B2 (en) 2021-07-09 2025-06-24 Applied Materials, Inc. Shaped showerhead for edge plasma modulation
KR20240063924A (ko) * 2021-09-29 2024-05-10 램 리써치 코포레이션 에지 용량성 커플링 플라즈마 (capacitively coupled plasma, ccp) 챔버 구조체
KR102722858B1 (ko) * 2022-07-29 2024-10-29 하나머티리얼즈(주) 포커스 링 및 그의 제조 방법
WO2024142785A1 (ja) * 2022-12-26 2024-07-04 東京エレクトロン株式会社 プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286814A (ja) 2005-03-31 2006-10-19 Tokyo Electron Ltd プラズマ処理装置
JP2009239012A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマエッチング方法
JP2016184610A (ja) * 2015-03-25 2016-10-20 株式会社東芝 上部電極、エッジリングおよびプラズマ処理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208483A (ja) * 1999-01-08 2000-07-28 Mitsubishi Electric Corp ウェハ処理装置及びウェハ処理方法
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP4672456B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7993489B2 (en) * 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
JP4642528B2 (ja) * 2005-03-31 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US20080006205A1 (en) * 2006-07-10 2008-01-10 Douglas Keil Apparatus and Method for Controlling Plasma Potential
JP5484981B2 (ja) * 2010-03-25 2014-05-07 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP5982206B2 (ja) * 2012-07-17 2016-08-31 東京エレクトロン株式会社 下部電極、及びプラズマ処理装置
JP5695117B2 (ja) * 2013-04-04 2015-04-01 東京エレクトロン株式会社 プラズマエッチング方法
KR20150143793A (ko) * 2013-04-17 2015-12-23 도쿄엘렉트론가부시키가이샤 균일한 플라즈마 밀도를 가진 용량 결합형 플라즈마 장비
US10937634B2 (en) * 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
TW201613421A (en) * 2014-07-03 2016-04-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
JP6643950B2 (ja) * 2016-05-23 2020-02-12 東京エレクトロン株式会社 プラズマ処理方法
US10109478B2 (en) * 2016-09-09 2018-10-23 Lam Research Corporation Systems and methods for UV-based suppression of plasma instability
JP6793019B2 (ja) * 2016-11-28 2020-12-02 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286814A (ja) 2005-03-31 2006-10-19 Tokyo Electron Ltd プラズマ処理装置
JP2009239012A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマエッチング方法
JP2016184610A (ja) * 2015-03-25 2016-10-20 株式会社東芝 上部電極、エッジリングおよびプラズマ処理装置

Also Published As

Publication number Publication date
CN111261511A (zh) 2020-06-09
JP2020091942A (ja) 2020-06-11
CN111261511B (zh) 2024-06-18
US10847348B2 (en) 2020-11-24
JP7142551B2 (ja) 2022-09-27
KR20200067104A (ko) 2020-06-11
TWI853852B (zh) 2024-09-01
TW202109603A (zh) 2021-03-01
US20200176226A1 (en) 2020-06-04

Similar Documents

Publication Publication Date Title
KR102761453B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US7988814B2 (en) Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
CN109509694B (zh) 等离子体处理装置和等离子体处理方法
CN111095498B (zh) 载置台、基板处理装置以及边缘环
US20070227666A1 (en) Plasma processing apparatus
JP2016506592A (ja) 均一なプラズマ密度を有する容量結合プラズマ装置
KR20180054495A (ko) 이중 주파수 표면파 플라즈마 소스
US20060278340A1 (en) Confined plasma with adjustable electrode area ratio
KR20100128238A (ko) 플라즈마 처리용 원환 형상 부품 및 플라즈마 처리 장치
US11171007B2 (en) Plasma processing apparatus and plasma etching method
KR102840369B1 (ko) 에지 링 및 기판 처리 장치
KR102661857B1 (ko) 플라즈마 처리 방법
CN107424899A (zh) 等离子体处理方法
KR102826843B1 (ko) 기판 처리 장치
KR101283830B1 (ko) 전극 피스의 독립적 움직임을 이용한 에칭 레이트 균일성개선
US20210319987A1 (en) Edge ring, stage and substrate processing apparatus
US20210020408A1 (en) Substrate support assembly, substrate processing apparatus, and edge ring
KR102245821B1 (ko) 배플 및 이를 가지는 기판 처리 장치
JP2000331996A (ja) プラズマ処理装置
JP4935149B2 (ja) プラズマ処理用の電極板及びプラズマ処理装置
WO2020059596A1 (ja) 載置台及び基板処理装置
JP2000082698A (ja) プラズマ処理装置
JP2023088520A (ja) プラズマエッチング処理装置及び上部電極

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20191202

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20220902

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20191202

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20240827

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20241029

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20250123

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20250124

End annual number: 3

Start annual number: 1

PG1601 Publication of registration