CN111261511B - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法 Download PDF

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Publication number
CN111261511B
CN111261511B CN201911220416.3A CN201911220416A CN111261511B CN 111261511 B CN111261511 B CN 111261511B CN 201911220416 A CN201911220416 A CN 201911220416A CN 111261511 B CN111261511 B CN 111261511B
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upper electrode
plasma processing
plasma
inner upper
electrode
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Chinese (zh)
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CN111261511A (zh
Inventor
塚原利也
山边周平
谷地晃汰
佐藤徹治
内田阳平
铃木步太
田村洋典
花冈秀敏
佐佐木淳一
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201911220416.3A 2018-12-03 2019-12-03 等离子体处理装置和等离子体处理方法 Active CN111261511B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-226567 2018-12-03
JP2018226567A JP7142551B2 (ja) 2018-12-03 2018-12-03 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
CN111261511A CN111261511A (zh) 2020-06-09
CN111261511B true CN111261511B (zh) 2024-06-18

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Country Status (5)

Country Link
US (1) US10847348B2 (https=)
JP (1) JP7142551B2 (https=)
KR (1) KR102761453B1 (https=)
CN (1) CN111261511B (https=)
TW (1) TWI853852B (https=)

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* Cited by examiner, † Cited by third party
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JP7378276B2 (ja) * 2019-11-12 2023-11-13 東京エレクトロン株式会社 プラズマ処理装置
KR102793905B1 (ko) * 2020-08-14 2025-04-08 삼성전자주식회사 상부 전극 및 이를 포함하는 기판 처리 장치
JP2022048753A (ja) 2020-09-15 2022-03-28 キオクシア株式会社 半導体製造システム、半導体装置の製造方法、及び半導体装置
KR102787323B1 (ko) * 2020-09-24 2025-03-27 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US12338530B2 (en) 2021-07-09 2025-06-24 Applied Materials, Inc. Shaped showerhead for edge plasma modulation
KR20240063924A (ko) * 2021-09-29 2024-05-10 램 리써치 코포레이션 에지 용량성 커플링 플라즈마 (capacitively coupled plasma, ccp) 챔버 구조체
KR102722858B1 (ko) * 2022-07-29 2024-10-29 하나머티리얼즈(주) 포커스 링 및 그의 제조 방법
WO2024142785A1 (ja) * 2022-12-26 2024-07-04 東京エレクトロン株式会社 プラズマ処理装置

Citations (2)

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CN101546685A (zh) * 2008-03-27 2009-09-30 东京毅力科创株式会社 等离子体处理装置和等离子体蚀刻方法
CN107424899A (zh) * 2016-05-23 2017-12-01 东京毅力科创株式会社 等离子体处理方法

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JP2000208483A (ja) * 1999-01-08 2000-07-28 Mitsubishi Electric Corp ウェハ処理装置及びウェハ処理方法
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP4672456B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7993489B2 (en) * 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
JP4704088B2 (ja) 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置
JP4642528B2 (ja) * 2005-03-31 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
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JP5484981B2 (ja) * 2010-03-25 2014-05-07 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP5982206B2 (ja) * 2012-07-17 2016-08-31 東京エレクトロン株式会社 下部電極、及びプラズマ処理装置
JP5695117B2 (ja) * 2013-04-04 2015-04-01 東京エレクトロン株式会社 プラズマエッチング方法
KR20150143793A (ko) * 2013-04-17 2015-12-23 도쿄엘렉트론가부시키가이샤 균일한 플라즈마 밀도를 가진 용량 결합형 플라즈마 장비
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JP2016184610A (ja) * 2015-03-25 2016-10-20 株式会社東芝 上部電極、エッジリングおよびプラズマ処理装置
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CN101546685A (zh) * 2008-03-27 2009-09-30 东京毅力科创株式会社 等离子体处理装置和等离子体蚀刻方法
CN107424899A (zh) * 2016-05-23 2017-12-01 东京毅力科创株式会社 等离子体处理方法

Also Published As

Publication number Publication date
CN111261511A (zh) 2020-06-09
JP2020091942A (ja) 2020-06-11
US10847348B2 (en) 2020-11-24
KR102761453B1 (ko) 2025-02-03
JP7142551B2 (ja) 2022-09-27
KR20200067104A (ko) 2020-06-11
TWI853852B (zh) 2024-09-01
TW202109603A (zh) 2021-03-01
US20200176226A1 (en) 2020-06-04

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