KR102746633B1 - 칩의 제조 방법 - Google Patents
칩의 제조 방법 Download PDFInfo
- Publication number
- KR102746633B1 KR102746633B1 KR1020190063226A KR20190063226A KR102746633B1 KR 102746633 B1 KR102746633 B1 KR 102746633B1 KR 1020190063226 A KR1020190063226 A KR 1020190063226A KR 20190063226 A KR20190063226 A KR 20190063226A KR 102746633 B1 KR102746633 B1 KR 102746633B1
- Authority
- KR
- South Korea
- Prior art keywords
- workpiece
- chip
- laser processing
- modified layer
- processing step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000002093 peripheral effect Effects 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 238000012423 maintenance Methods 0.000 claims description 31
- 230000002787 reinforcement Effects 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 15
- 230000003014 reinforcing effect Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 description 27
- 230000006870 function Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2018-117127 | 2018-06-20 | ||
| JP2018117127A JP7102065B2 (ja) | 2018-06-20 | 2018-06-20 | チップの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190143364A KR20190143364A (ko) | 2019-12-30 |
| KR102746633B1 true KR102746633B1 (ko) | 2024-12-24 |
Family
ID=69096967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190063226A Active KR102746633B1 (ko) | 2018-06-20 | 2019-05-29 | 칩의 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7102065B2 (enExample) |
| KR (1) | KR102746633B1 (enExample) |
| CN (1) | CN110690172B (enExample) |
| TW (1) | TWI800658B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7648375B2 (ja) * | 2020-12-17 | 2025-03-18 | 株式会社ディスコ | ウエーハの生成装置 |
| JP7645086B2 (ja) * | 2021-01-29 | 2025-03-13 | 株式会社ディスコ | 剥離装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005135964A (ja) * | 2003-10-28 | 2005-05-26 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
| JP2007141998A (ja) * | 2005-11-16 | 2007-06-07 | Denso Corp | 半導体チップの製造装置及び半導体チップの製造方法 |
| JP2008153420A (ja) | 2006-12-18 | 2008-07-03 | Seiko Epson Corp | 基材の分割方法、液滴吐出ヘッドの製造方法、半導体装置の製造方法、基板の製造方法、及び電気光学装置の製造方法 |
| JP2014199834A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社ディスコ | 保持手段及び加工方法 |
| JP2014236034A (ja) * | 2013-05-31 | 2014-12-15 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2017123400A (ja) | 2016-01-07 | 2017-07-13 | 株式会社ディスコ | チャックテーブル |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS523775B2 (enExample) * | 1972-07-08 | 1977-01-29 | ||
| JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
| JP2005342760A (ja) | 2004-06-03 | 2005-12-15 | Disco Abrasive Syst Ltd | レーザー加工装置 |
| TWI283023B (en) * | 2005-12-23 | 2007-06-21 | Advanced Semiconductor Eng | Wafer level packaging process |
| JP5791866B2 (ja) | 2009-03-06 | 2015-10-07 | 株式会社ディスコ | ワーク分割装置 |
| JP6154121B2 (ja) | 2012-12-06 | 2017-06-28 | リンテック株式会社 | 割断装置及び割断方法 |
| JP6382568B2 (ja) * | 2014-05-09 | 2018-08-29 | 株式会社ディスコ | レーザー加工装置 |
| JP6710463B2 (ja) * | 2016-10-11 | 2020-06-17 | 株式会社ディスコ | ウェーハの加工方法 |
-
2018
- 2018-06-20 JP JP2018117127A patent/JP7102065B2/ja active Active
-
2019
- 2019-05-29 KR KR1020190063226A patent/KR102746633B1/ko active Active
- 2019-06-14 CN CN201910513486.1A patent/CN110690172B/zh active Active
- 2019-06-17 TW TW108120944A patent/TWI800658B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005135964A (ja) * | 2003-10-28 | 2005-05-26 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
| JP2007141998A (ja) * | 2005-11-16 | 2007-06-07 | Denso Corp | 半導体チップの製造装置及び半導体チップの製造方法 |
| JP2008153420A (ja) | 2006-12-18 | 2008-07-03 | Seiko Epson Corp | 基材の分割方法、液滴吐出ヘッドの製造方法、半導体装置の製造方法、基板の製造方法、及び電気光学装置の製造方法 |
| JP2014199834A (ja) * | 2013-03-29 | 2014-10-23 | 株式会社ディスコ | 保持手段及び加工方法 |
| JP2014236034A (ja) * | 2013-05-31 | 2014-12-15 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2017123400A (ja) | 2016-01-07 | 2017-07-13 | 株式会社ディスコ | チャックテーブル |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190143364A (ko) | 2019-12-30 |
| JP7102065B2 (ja) | 2022-07-19 |
| TWI800658B (zh) | 2023-05-01 |
| CN110690172B (zh) | 2024-05-14 |
| TW202002057A (zh) | 2020-01-01 |
| JP2019220581A (ja) | 2019-12-26 |
| CN110690172A (zh) | 2020-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20190529 |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20220228 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20190529 Comment text: Patent Application |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20240223 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20241018 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20241220 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20241220 End annual number: 3 Start annual number: 1 |
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| PG1601 | Publication of registration |