JP7102065B2 - チップの製造方法 - Google Patents

チップの製造方法 Download PDF

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Publication number
JP7102065B2
JP7102065B2 JP2018117127A JP2018117127A JP7102065B2 JP 7102065 B2 JP7102065 B2 JP 7102065B2 JP 2018117127 A JP2018117127 A JP 2018117127A JP 2018117127 A JP2018117127 A JP 2018117127A JP 7102065 B2 JP7102065 B2 JP 7102065B2
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JP
Japan
Prior art keywords
workpiece
chip
holding
work piece
modified layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018117127A
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English (en)
Japanese (ja)
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JP2019220581A5 (enExample
JP2019220581A (ja
Inventor
良彰 淀
金艶 趙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2018117127A priority Critical patent/JP7102065B2/ja
Priority to KR1020190063226A priority patent/KR102746633B1/ko
Priority to CN201910513486.1A priority patent/CN110690172B/zh
Priority to TW108120944A priority patent/TWI800658B/zh
Publication of JP2019220581A publication Critical patent/JP2019220581A/ja
Publication of JP2019220581A5 publication Critical patent/JP2019220581A5/ja
Application granted granted Critical
Publication of JP7102065B2 publication Critical patent/JP7102065B2/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018117127A 2018-06-20 2018-06-20 チップの製造方法 Active JP7102065B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018117127A JP7102065B2 (ja) 2018-06-20 2018-06-20 チップの製造方法
KR1020190063226A KR102746633B1 (ko) 2018-06-20 2019-05-29 칩의 제조 방법
CN201910513486.1A CN110690172B (zh) 2018-06-20 2019-06-14 芯片的制造方法
TW108120944A TWI800658B (zh) 2018-06-20 2019-06-17 晶片製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018117127A JP7102065B2 (ja) 2018-06-20 2018-06-20 チップの製造方法

Publications (3)

Publication Number Publication Date
JP2019220581A JP2019220581A (ja) 2019-12-26
JP2019220581A5 JP2019220581A5 (enExample) 2020-03-12
JP7102065B2 true JP7102065B2 (ja) 2022-07-19

Family

ID=69096967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018117127A Active JP7102065B2 (ja) 2018-06-20 2018-06-20 チップの製造方法

Country Status (4)

Country Link
JP (1) JP7102065B2 (enExample)
KR (1) KR102746633B1 (enExample)
CN (1) CN110690172B (enExample)
TW (1) TWI800658B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7648375B2 (ja) * 2020-12-17 2025-03-18 株式会社ディスコ ウエーハの生成装置
JP7645086B2 (ja) * 2021-01-29 2025-03-13 株式会社ディスコ 剥離装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005342760A (ja) 2004-06-03 2005-12-15 Disco Abrasive Syst Ltd レーザー加工装置
JP2008153420A (ja) 2006-12-18 2008-07-03 Seiko Epson Corp 基材の分割方法、液滴吐出ヘッドの製造方法、半導体装置の製造方法、基板の製造方法、及び電気光学装置の製造方法
JP2014116338A (ja) 2012-12-06 2014-06-26 Lintec Corp 割断装置及び割断方法
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523775B2 (enExample) * 1972-07-08 1977-01-29
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP2005135964A (ja) * 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2007141998A (ja) * 2005-11-16 2007-06-07 Denso Corp 半導体チップの製造装置及び半導体チップの製造方法
TWI283023B (en) * 2005-12-23 2007-06-21 Advanced Semiconductor Eng Wafer level packaging process
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP6382568B2 (ja) * 2014-05-09 2018-08-29 株式会社ディスコ レーザー加工装置
JP2017123400A (ja) 2016-01-07 2017-07-13 株式会社ディスコ チャックテーブル
JP6710463B2 (ja) * 2016-10-11 2020-06-17 株式会社ディスコ ウェーハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005342760A (ja) 2004-06-03 2005-12-15 Disco Abrasive Syst Ltd レーザー加工装置
JP2008153420A (ja) 2006-12-18 2008-07-03 Seiko Epson Corp 基材の分割方法、液滴吐出ヘッドの製造方法、半導体装置の製造方法、基板の製造方法、及び電気光学装置の製造方法
JP2014116338A (ja) 2012-12-06 2014-06-26 Lintec Corp 割断装置及び割断方法
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
KR20190143364A (ko) 2019-12-30
TWI800658B (zh) 2023-05-01
CN110690172B (zh) 2024-05-14
TW202002057A (zh) 2020-01-01
JP2019220581A (ja) 2019-12-26
CN110690172A (zh) 2020-01-14
KR102746633B1 (ko) 2024-12-24

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