KR102660716B1 - 바이어스 펄스 cmp 그루브 패턴 - Google Patents

바이어스 펄스 cmp 그루브 패턴 Download PDF

Info

Publication number
KR102660716B1
KR102660716B1 KR1020180060460A KR20180060460A KR102660716B1 KR 102660716 B1 KR102660716 B1 KR 102660716B1 KR 1020180060460 A KR1020180060460 A KR 1020180060460A KR 20180060460 A KR20180060460 A KR 20180060460A KR 102660716 B1 KR102660716 B1 KR 102660716B1
Authority
KR
South Korea
Prior art keywords
polishing
bias
grooves
polishing pad
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020180060460A
Other languages
English (en)
Korean (ko)
Other versions
KR20180136376A (ko
Inventor
부 엔구옌 존
쿠안 트랜 토니
제임스 헨드론 제프리
로버트 스태크 제프리
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Publication of KR20180136376A publication Critical patent/KR20180136376A/ko
Application granted granted Critical
Publication of KR102660716B1 publication Critical patent/KR102660716B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H01L21/304—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H01L21/31051—
    • H01L21/32115—
    • H01L21/76819—
    • H01L21/7684—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/15—Preparing bulk and homogeneous wafers by making porous regions on the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing & Machinery (AREA)
KR1020180060460A 2017-06-14 2018-05-28 바이어스 펄스 cmp 그루브 패턴 Active KR102660716B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201715623166A 2017-06-14 2017-06-14
US15/623,166 2017-06-14
US201715625003A 2017-06-16 2017-06-16
US15/625,003 2017-06-16
US15/726,027 2017-10-05
US15/726,027 US10777418B2 (en) 2017-06-14 2017-10-05 Biased pulse CMP groove pattern

Publications (2)

Publication Number Publication Date
KR20180136376A KR20180136376A (ko) 2018-12-24
KR102660716B1 true KR102660716B1 (ko) 2024-04-26

Family

ID=64457742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180060460A Active KR102660716B1 (ko) 2017-06-14 2018-05-28 바이어스 펄스 cmp 그루브 패턴

Country Status (8)

Country Link
US (2) US10777418B2 (https=)
JP (1) JP7323271B2 (https=)
KR (1) KR102660716B1 (https=)
CN (1) CN109079649B (https=)
DE (1) DE102018004632A1 (https=)
FR (1) FR3067630B1 (https=)
SG (1) SG10201804560VA (https=)
TW (1) TWI799413B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102059647B1 (ko) * 2018-06-21 2019-12-26 에스케이씨 주식회사 슬러리 유동성이 향상된 연마패드 및 이의 제조방법
US11331767B2 (en) * 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
KR102222851B1 (ko) * 2019-05-29 2021-03-08 한국생산기술연구원 그루브가 형성된 연마용 패드
KR102746090B1 (ko) 2020-03-13 2024-12-26 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5706178B2 (ja) * 2010-02-05 2015-04-22 株式会社クラレ 研磨パッド

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536781C3 (de) * 1975-08-19 1978-03-16 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung von mehrschichtmagnetogrammtraegern
US4037367A (en) 1975-12-22 1977-07-26 Kruse James A Grinding tool
US4450652A (en) 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
JPS60242975A (ja) * 1984-05-14 1985-12-02 Kanebo Ltd 平面研磨装置
US5076024A (en) 1990-08-24 1991-12-31 Intelmatec Corporation Disk polisher assembly
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5527215A (en) 1992-01-10 1996-06-18 Schlegel Corporation Foam buffing pad having a finishing surface with a splash reducing configuration
US5243790A (en) 1992-06-25 1993-09-14 Abrasifs Vega, Inc. Abrasive member
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6135856A (en) * 1996-01-19 2000-10-24 Micron Technology, Inc. Apparatus and method for semiconductor planarization
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
US5690540A (en) 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US5888121A (en) 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
WO2000059680A1 (en) * 1999-03-30 2000-10-12 Nikon Corporation Polishing body, polisher, polishing method, and method for producing semiconductor device
US6220942B1 (en) 1999-04-02 2001-04-24 Applied Materials, Inc. CMP platen with patterned surface
JP2001071256A (ja) 1999-08-31 2001-03-21 Shinozaki Seisakusho:Kk 研磨パッドの溝形成方法及び装置並びに研磨パッド
EP1602444B1 (en) 2000-01-31 2008-03-12 Shin-Etsu Handotai Company Limited Polishing method
TW479000B (en) 2000-02-24 2002-03-11 United Microelectronics Corp Polish pad for polishing semiconductor wafer
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
EP1292428B1 (en) * 2000-06-19 2005-04-20 Struers A/S A multi-zone grinding and/or polishing sheet
US6656019B1 (en) * 2000-06-29 2003-12-02 International Business Machines Corporation Grooved polishing pads and methods of use
US8062098B2 (en) * 2000-11-17 2011-11-22 Duescher Wayne O High speed flat lapping platen
JP4087581B2 (ja) 2001-06-06 2008-05-21 株式会社荏原製作所 研磨装置
US7169014B2 (en) * 2002-07-18 2007-01-30 Micron Technology, Inc. Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces
US7377840B2 (en) * 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US6783436B1 (en) * 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US6918824B2 (en) * 2003-09-25 2005-07-19 Novellus Systems, Inc. Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
US6955587B2 (en) * 2004-01-30 2005-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Grooved polishing pad and method
JP2005262341A (ja) 2004-03-16 2005-09-29 Noritake Super Abrasive:Kk Ｃｍｐパッドコンディショナー
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
KR100568258B1 (ko) * 2004-07-01 2006-04-07 삼성전자주식회사 화학적 기계적 연마용 연마 패드 및 이를 이용하는 화학적기계적 연마 장치
USD559066S1 (en) * 2004-10-26 2008-01-08 Jsr Corporation Polishing pad
US7169029B2 (en) * 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article
JP3769581B1 (ja) * 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
KR101279819B1 (ko) * 2005-04-12 2013-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 방사-편향 연마 패드
KR100721196B1 (ko) * 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
US7534162B2 (en) * 2005-09-06 2009-05-19 Freescale Semiconductor, Inc. Grooved platen with channels or pathway to ambient air
KR20070070094A (ko) * 2005-12-28 2007-07-03 제이에스알 가부시끼가이샤 화학 기계 연마 패드 및 화학 기계 연마 방법
US20080220702A1 (en) * 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
JP4909706B2 (ja) 2006-10-24 2012-04-04 東洋ゴム工業株式会社 研磨パッド
TWI455795B (zh) * 2007-10-18 2014-10-11 Iv Technologies Co Ltd 研磨墊及研磨方法
US20090137187A1 (en) * 2007-11-21 2009-05-28 Chien-Min Sung Diagnostic Methods During CMP Pad Dressing and Associated Systems
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
TWI360459B (en) * 2008-04-11 2012-03-21 Bestac Advanced Material Co Ltd A polishing pad having groove structure for avoidi
KR20110100080A (ko) * 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
KR101232787B1 (ko) * 2010-08-18 2013-02-13 주식회사 엘지화학 연마 시스템용 연마 패드
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
TWI492818B (zh) * 2011-07-12 2015-07-21 Iv Technologies Co Ltd 研磨墊、研磨方法以及研磨系統
US8920219B2 (en) 2011-07-15 2014-12-30 Nexplanar Corporation Polishing pad with alignment aperture
US20140378035A1 (en) * 2011-09-15 2014-12-25 Toray Industries, Inc. Polishing pad
US9067298B2 (en) * 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
KR102148050B1 (ko) 2012-11-06 2020-10-14 캐보트 마이크로일렉트로닉스 코포레이션 오프셋 동심형 그루빙 패턴을 갖는 폴리싱 패드, 및 이로써 기판을 폴리싱하는 방법
US9649742B2 (en) * 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
US9415479B2 (en) * 2013-02-08 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive chemical mechanical planarization polishing pad
TWM459065U (zh) 2013-04-29 2013-08-11 Iv Technologies Co Ltd 硏磨墊以及硏磨系統
TWM475334U (en) 2013-06-07 2014-04-01 Iv Technologies Co Ltd Polishing pad
TWI599447B (zh) * 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
CN203665338U (zh) * 2013-12-13 2014-06-25 上海乐百通工具制造有限公司 金刚石软膜片
TWI549781B (zh) 2015-08-07 2016-09-21 智勝科技股份有限公司 研磨墊、研磨系統及研磨方法
CN106564004B (zh) * 2016-11-17 2018-10-19 湖北鼎龙控股股份有限公司 一种抛光垫

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5706178B2 (ja) * 2010-02-05 2015-04-22 株式会社クラレ 研磨パッド

Also Published As

Publication number Publication date
TW201904723A (zh) 2019-02-01
KR20180136376A (ko) 2018-12-24
SG10201804560VA (en) 2019-01-30
DE102018004632A1 (de) 2018-12-20
US20200381258A1 (en) 2020-12-03
CN109079649B (zh) 2020-11-17
JP7323271B2 (ja) 2023-08-08
TWI799413B (zh) 2023-04-21
US10777418B2 (en) 2020-09-15
FR3067630A1 (fr) 2018-12-21
FR3067630B1 (fr) 2022-04-01
CN109079649A (zh) 2018-12-25
US20180366333A1 (en) 2018-12-20
JP2019022931A (ja) 2019-02-14

Similar Documents

Publication Publication Date Title
KR102660717B1 (ko) 사다리꼴 cmp 그루브 패턴
KR102660720B1 (ko) 균일한 cmp 연마 방법
KR101601281B1 (ko) 고속 연마 방법
KR102660716B1 (ko) 바이어스 펄스 cmp 그루브 패턴
KR102660718B1 (ko) 고속 cmp 연마 방법
CN112959212B (zh) 一种带有优化沟槽的化学机械抛光垫及其应用
KR102660719B1 (ko) 조절된 체류 cmp 연마 방법

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000