JP7323271B2 - 偏倚されたパルスｃｍｐ溝パターン - Google Patents

偏倚されたパルスｃｍｐ溝パターン Download PDF

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Publication number
JP7323271B2
JP7323271B2 JP2018111068A JP2018111068A JP7323271B2 JP 7323271 B2 JP7323271 B2 JP 7323271B2 JP 2018111068 A JP2018111068 A JP 2018111068A JP 2018111068 A JP2018111068 A JP 2018111068A JP 7323271 B2 JP7323271 B2 JP 7323271B2
Authority
JP
Japan
Prior art keywords
polishing
grooves
polishing pad
wafer
radial feed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018111068A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019022931A5 (https=
JP2019022931A (ja
Inventor
ジョン・ヴー・グエン
トニー・クアン・トラン
ジェフリー・ジェームズ・ヘンドロン
ジェフリー・ロバート・スタック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, DuPont Electronic Materials Holding Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2019022931A publication Critical patent/JP2019022931A/ja
Publication of JP2019022931A5 publication Critical patent/JP2019022931A5/ja
Application granted granted Critical
Publication of JP7323271B2 publication Critical patent/JP7323271B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/15—Preparing bulk and homogeneous wafers by making porous regions on the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing & Machinery (AREA)
JP2018111068A 2017-06-14 2018-06-11 偏倚されたパルスｃｍｐ溝パターン Active JP7323271B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201715623166A 2017-06-14 2017-06-14
US15/623,166 2017-06-14
US201715625003A 2017-06-16 2017-06-16
US15/625,003 2017-06-16
US15/726,027 2017-10-05
US15/726,027 US10777418B2 (en) 2017-06-14 2017-10-05 Biased pulse CMP groove pattern

Publications (3)

Publication Number Publication Date
JP2019022931A JP2019022931A (ja) 2019-02-14
JP2019022931A5 JP2019022931A5 (https=) 2021-07-26
JP7323271B2 true JP7323271B2 (ja) 2023-08-08

Family

ID=64457742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018111068A Active JP7323271B2 (ja) 2017-06-14 2018-06-11 偏倚されたパルスｃｍｐ溝パターン

Country Status (8)

Country Link
US (2) US10777418B2 (https=)
JP (1) JP7323271B2 (https=)
KR (1) KR102660716B1 (https=)
CN (1) CN109079649B (https=)
DE (1) DE102018004632A1 (https=)
FR (1) FR3067630B1 (https=)
SG (1) SG10201804560VA (https=)
TW (1) TWI799413B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102059647B1 (ko) * 2018-06-21 2019-12-26 에스케이씨 주식회사 슬러리 유동성이 향상된 연마패드 및 이의 제조방법
US11331767B2 (en) * 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
KR102222851B1 (ko) * 2019-05-29 2021-03-08 한국생산기술연구원 그루브가 형성된 연마용 패드
KR102746090B1 (ko) 2020-03-13 2024-12-26 삼성전자주식회사 Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
US20080220702A1 (en) 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US20090311955A1 (en) 2008-03-14 2009-12-17 Nexplanar Corporation Grooved CMP pad
JP2015533668A (ja) 2012-11-06 2015-11-26 キャボット マイクロエレクトロニクス コーポレイション オフセットした同心の溝のパターンを有する研磨パッドおよびそれを用いて基材を研磨するための方法

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536781C3 (de) * 1975-08-19 1978-03-16 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung von mehrschichtmagnetogrammtraegern
US4037367A (en) 1975-12-22 1977-07-26 Kruse James A Grinding tool
US4450652A (en) 1981-09-04 1984-05-29 Monsanto Company Temperature control for wafer polishing
JPS60242975A (ja) * 1984-05-14 1985-12-02 Kanebo Ltd 平面研磨装置
US5076024A (en) 1990-08-24 1991-12-31 Intelmatec Corporation Disk polisher assembly
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5527215A (en) 1992-01-10 1996-06-18 Schlegel Corporation Foam buffing pad having a finishing surface with a splash reducing configuration
US5243790A (en) 1992-06-25 1993-09-14 Abrasifs Vega, Inc. Abrasive member
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6135856A (en) * 1996-01-19 2000-10-24 Micron Technology, Inc. Apparatus and method for semiconductor planarization
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
US5690540A (en) 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US5888121A (en) 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
WO2000059680A1 (en) * 1999-03-30 2000-10-12 Nikon Corporation Polishing body, polisher, polishing method, and method for producing semiconductor device
US6220942B1 (en) 1999-04-02 2001-04-24 Applied Materials, Inc. CMP platen with patterned surface
JP2001071256A (ja) 1999-08-31 2001-03-21 Shinozaki Seisakusho:Kk 研磨パッドの溝形成方法及び装置並びに研磨パッド
EP1602444B1 (en) 2000-01-31 2008-03-12 Shin-Etsu Handotai Company Limited Polishing method
TW479000B (en) 2000-02-24 2002-03-11 United Microelectronics Corp Polish pad for polishing semiconductor wafer
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
EP1292428B1 (en) * 2000-06-19 2005-04-20 Struers A/S A multi-zone grinding and/or polishing sheet
US6656019B1 (en) * 2000-06-29 2003-12-02 International Business Machines Corporation Grooved polishing pads and methods of use
US8062098B2 (en) * 2000-11-17 2011-11-22 Duescher Wayne O High speed flat lapping platen
JP4087581B2 (ja) 2001-06-06 2008-05-21 株式会社荏原製作所 研磨装置
US7169014B2 (en) * 2002-07-18 2007-01-30 Micron Technology, Inc. Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces
US7377840B2 (en) * 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US6783436B1 (en) * 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US6918824B2 (en) * 2003-09-25 2005-07-19 Novellus Systems, Inc. Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
US6955587B2 (en) * 2004-01-30 2005-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Grooved polishing pad and method
JP2005262341A (ja) 2004-03-16 2005-09-29 Noritake Super Abrasive:Kk Ｃｍｐパッドコンディショナー
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
KR100568258B1 (ko) * 2004-07-01 2006-04-07 삼성전자주식회사 화학적 기계적 연마용 연마 패드 및 이를 이용하는 화학적기계적 연마 장치
USD559066S1 (en) * 2004-10-26 2008-01-08 Jsr Corporation Polishing pad
US7169029B2 (en) * 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article
JP3769581B1 (ja) * 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
KR101279819B1 (ko) * 2005-04-12 2013-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 방사-편향 연마 패드
KR100721196B1 (ko) * 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
US7534162B2 (en) * 2005-09-06 2009-05-19 Freescale Semiconductor, Inc. Grooved platen with channels or pathway to ambient air
KR20070070094A (ko) * 2005-12-28 2007-07-03 제이에스알 가부시끼가이샤 화학 기계 연마 패드 및 화학 기계 연마 방법
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
JP4909706B2 (ja) 2006-10-24 2012-04-04 東洋ゴム工業株式会社 研磨パッド
TWI455795B (zh) * 2007-10-18 2014-10-11 Iv Technologies Co Ltd 研磨墊及研磨方法
US20090137187A1 (en) * 2007-11-21 2009-05-28 Chien-Min Sung Diagnostic Methods During CMP Pad Dressing and Associated Systems
TWI360459B (en) * 2008-04-11 2012-03-21 Bestac Advanced Material Co Ltd A polishing pad having groove structure for avoidi
JP5706178B2 (ja) * 2010-02-05 2015-04-22 株式会社クラレ 研磨パッド
KR20110100080A (ko) * 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
KR101232787B1 (ko) * 2010-08-18 2013-02-13 주식회사 엘지화학 연마 시스템용 연마 패드
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
TWI492818B (zh) * 2011-07-12 2015-07-21 Iv Technologies Co Ltd 研磨墊、研磨方法以及研磨系統
US8920219B2 (en) 2011-07-15 2014-12-30 Nexplanar Corporation Polishing pad with alignment aperture
US20140378035A1 (en) * 2011-09-15 2014-12-25 Toray Industries, Inc. Polishing pad
US9067298B2 (en) * 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
US9649742B2 (en) * 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
US9415479B2 (en) * 2013-02-08 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive chemical mechanical planarization polishing pad
TWM459065U (zh) 2013-04-29 2013-08-11 Iv Technologies Co Ltd 硏磨墊以及硏磨系統
TWM475334U (en) 2013-06-07 2014-04-01 Iv Technologies Co Ltd Polishing pad
TWI599447B (zh) * 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
CN203665338U (zh) * 2013-12-13 2014-06-25 上海乐百通工具制造有限公司 金刚石软膜片
TWI549781B (zh) 2015-08-07 2016-09-21 智勝科技股份有限公司 研磨墊、研磨系統及研磨方法
CN106564004B (zh) * 2016-11-17 2018-10-19 湖北鼎龙控股股份有限公司 一种抛光垫

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081322A (ja) 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
US20080220702A1 (en) 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US20090311955A1 (en) 2008-03-14 2009-12-17 Nexplanar Corporation Grooved CMP pad
JP2015533668A (ja) 2012-11-06 2015-11-26 キャボット マイクロエレクトロニクス コーポレイション オフセットした同心の溝のパターンを有する研磨パッドおよびそれを用いて基材を研磨するための方法

Also Published As

Publication number Publication date
TW201904723A (zh) 2019-02-01
KR20180136376A (ko) 2018-12-24
SG10201804560VA (en) 2019-01-30
DE102018004632A1 (de) 2018-12-20
US20200381258A1 (en) 2020-12-03
CN109079649B (zh) 2020-11-17
TWI799413B (zh) 2023-04-21
US10777418B2 (en) 2020-09-15
FR3067630A1 (fr) 2018-12-21
FR3067630B1 (fr) 2022-04-01
CN109079649A (zh) 2018-12-25
KR102660716B1 (ko) 2024-04-26
US20180366333A1 (en) 2018-12-20
JP2019022931A (ja) 2019-02-14

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