KR102653351B1 - 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

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KR102653351B1
KR102653351B1 KR1020177035098A KR20177035098A KR102653351B1 KR 102653351 B1 KR102653351 B1 KR 102653351B1 KR 1020177035098 A KR1020177035098 A KR 1020177035098A KR 20177035098 A KR20177035098 A KR 20177035098A KR 102653351 B1 KR102653351 B1 KR 102653351B1
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film
substrate
conductive film
reflective
mask blank
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KR20180018526A (ko
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다쿠미 고바야시
가즈히로 하마모토
다츠오 아사카와
츠토무 쇼키
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020177035098A 2015-06-17 2016-06-08 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Active KR102653351B1 (ko)

Priority Applications (1)

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KR1020247010348A KR102870729B1 (ko) 2015-06-17 2016-06-08 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-121712 2015-06-17
JP2015121712 2015-06-17
PCT/JP2016/067134 WO2016204051A1 (ja) 2015-06-17 2016-06-08 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法

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KR1020247010348A Division KR102870729B1 (ko) 2015-06-17 2016-06-08 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

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KR20180018526A KR20180018526A (ko) 2018-02-21
KR102653351B1 true KR102653351B1 (ko) 2024-04-02

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KR1020247010348A Active KR102870729B1 (ko) 2015-06-17 2016-06-08 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

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US (2) US10606166B2 (https=)
JP (3) JP6815995B2 (https=)
KR (2) KR102653351B1 (https=)
SG (2) SG10201911400WA (https=)
TW (2) TWI755085B (https=)
WO (1) WO2016204051A1 (https=)

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JP7354005B2 (ja) * 2020-02-12 2023-10-02 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
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KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US20210333717A1 (en) * 2020-04-23 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask and method of manufacturing the same
KR102464780B1 (ko) * 2020-09-02 2022-11-09 주식회사 에스앤에스텍 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
US20220283491A1 (en) * 2021-03-03 2022-09-08 Shin-Etsu Chemical Co., Ltd. Reflective mask blank, and method for manufacturing thereof
JP7567742B2 (ja) * 2021-10-01 2024-10-16 信越化学工業株式会社 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法
JP7669321B2 (ja) * 2022-09-01 2025-04-28 信越化学工業株式会社 反射型マスクブランクおよび反射型マスクの製造方法
JPWO2024071026A1 (https=) * 2022-09-28 2024-04-04
JP7697609B1 (ja) * 2023-09-29 2025-06-24 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
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JP7296499B2 (ja) 2023-06-22
WO2016204051A1 (ja) 2016-12-22
JP7296358B2 (ja) 2023-06-22
US10606166B2 (en) 2020-03-31
SG11201710317RA (en) 2018-01-30
JP2022069683A (ja) 2022-05-11
KR20240046293A (ko) 2024-04-08
US20180149962A1 (en) 2018-05-31
KR20180018526A (ko) 2018-02-21
TW201706709A (zh) 2017-02-16
US10996554B2 (en) 2021-05-04
JP6815995B2 (ja) 2021-01-20
KR102870729B1 (ko) 2025-10-15
TW202109173A (zh) 2021-03-01
TWI755085B (zh) 2022-02-11
TWI708993B (zh) 2020-11-01
JP2021015295A (ja) 2021-02-12
SG10201911400WA (en) 2020-02-27
JPWO2016204051A1 (ja) 2018-04-05
US20200192213A1 (en) 2020-06-18

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