KR102639877B1 - 반도체 메모리 장치 - Google Patents

반도체 메모리 장치 Download PDF

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Publication number
KR102639877B1
KR102639877B1 KR1020180157989A KR20180157989A KR102639877B1 KR 102639877 B1 KR102639877 B1 KR 102639877B1 KR 1020180157989 A KR1020180157989 A KR 1020180157989A KR 20180157989 A KR20180157989 A KR 20180157989A KR 102639877 B1 KR102639877 B1 KR 102639877B1
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KR
South Korea
Prior art keywords
transistor
voltage
sense amplifiers
write drivers
conductive lines
Prior art date
Application number
KR1020180157989A
Other languages
English (en)
Korean (ko)
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KR20200010980A (ko
Inventor
조근휘
박승한
김효진
안국일
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to TW108115967A priority Critical patent/TWI746972B/zh
Priority to US16/428,184 priority patent/US10957373B2/en
Priority to CN201910520336.3A priority patent/CN110689911B/zh
Publication of KR20200010980A publication Critical patent/KR20200010980A/ko
Application granted granted Critical
Publication of KR102639877B1 publication Critical patent/KR102639877B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
KR1020180157989A 2018-07-05 2018-12-10 반도체 메모리 장치 KR102639877B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW108115967A TWI746972B (zh) 2018-07-05 2019-05-09 半導體記憶元件
US16/428,184 US10957373B2 (en) 2018-07-05 2019-05-31 Semiconductor memory device
CN201910520336.3A CN110689911B (zh) 2018-07-05 2019-06-17 半导体存储器设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20180078287 2018-07-05
KR1020180078287 2018-07-05

Publications (2)

Publication Number Publication Date
KR20200010980A KR20200010980A (ko) 2020-01-31
KR102639877B1 true KR102639877B1 (ko) 2024-02-27

Family

ID=69369501

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180157989A KR102639877B1 (ko) 2018-07-05 2018-12-10 반도체 메모리 장치

Country Status (2)

Country Link
KR (1) KR102639877B1 (zh)
TW (1) TWI746972B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102434912B1 (ko) 2022-01-24 2022-08-23 주식회사 하이 신경언어장애를 개선하는 방법 및 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3039245B2 (ja) * 1993-12-22 2000-05-08 日本電気株式会社 半導体メモリ装置
JP2001102465A (ja) * 1999-09-30 2001-04-13 Rohm Co Ltd 不揮発性メモリ
KR100425160B1 (ko) * 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
KR100460459B1 (ko) * 2002-07-30 2004-12-08 삼성전자주식회사 향상된 테스트 모드를 갖는 반도체 메모리 장치
JP4290457B2 (ja) * 2003-03-31 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
KR101842507B1 (ko) * 2011-10-06 2018-03-28 삼성전자주식회사 불휘발성 메모리의 동작 방법 및 불휘발성 메모리를 제어하는 방법
US9460770B1 (en) * 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells

Also Published As

Publication number Publication date
KR20200010980A (ko) 2020-01-31
TW202006724A (zh) 2020-02-01
TWI746972B (zh) 2021-11-21

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