KR102630952B1 - 페로브스카이트 재료의 침착 방법 - Google Patents
페로브스카이트 재료의 침착 방법 Download PDFInfo
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- KR102630952B1 KR102630952B1 KR1020187000705A KR20187000705A KR102630952B1 KR 102630952 B1 KR102630952 B1 KR 102630952B1 KR 1020187000705 A KR1020187000705 A KR 1020187000705A KR 20187000705 A KR20187000705 A KR 20187000705A KR 102630952 B1 KR102630952 B1 KR 102630952B1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- H01L2031/0344—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1510351.8 | 2015-06-12 | ||
| GBGB1510351.8A GB201510351D0 (en) | 2015-06-12 | 2015-06-12 | Method of depositioning a perovskite material |
| PCT/GB2016/051743 WO2016198897A1 (en) | 2015-06-12 | 2016-06-10 | Method of depositing a perovskite material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180016547A KR20180016547A (ko) | 2018-02-14 |
| KR102630952B1 true KR102630952B1 (ko) | 2024-01-29 |
Family
ID=53784644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187000705A Active KR102630952B1 (ko) | 2015-06-12 | 2016-06-10 | 페로브스카이트 재료의 침착 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US11728098B2 (https=) |
| EP (1) | EP3308412A1 (https=) |
| JP (2) | JP7372731B2 (https=) |
| KR (1) | KR102630952B1 (https=) |
| CN (2) | CN107743530B (https=) |
| AU (1) | AU2016275301A1 (https=) |
| GB (1) | GB201510351D0 (https=) |
| WO (1) | WO2016198897A1 (https=) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016200897A1 (en) * | 2015-06-08 | 2016-12-15 | The Florida State University Research Foundation, Inc. | Single-layer light-emitting diodes using organometallic halide perovskite/ionic-conducting polymer composite |
| WO2017195722A1 (ja) * | 2016-05-09 | 2017-11-16 | 株式会社カネカ | 積層型光電変換装置およびその製造方法 |
| KR102068871B1 (ko) * | 2016-07-14 | 2020-01-21 | 주식회사 엘지화학 | 유무기 복합 태양전지 |
| US20180254362A1 (en) * | 2017-03-01 | 2018-09-06 | Brown University | Mixed tin and germanium perovskites |
| US9991408B1 (en) * | 2017-04-13 | 2018-06-05 | International Business Machines Corporation | Monolithically integrated high voltage photovoltaics and light emitting diode with textured surface |
| KR102541379B1 (ko) | 2017-05-29 | 2023-06-08 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 페로브스카이트 실리콘 탠덤 태양전지 및 제조 방법 |
| CN107482069A (zh) * | 2017-07-10 | 2017-12-15 | 宋亮 | 一种多结化合物太阳能电池及其生产工艺 |
| CN108220442B (zh) * | 2018-01-10 | 2021-07-02 | 昆山德诺瑞尔生物科技有限公司 | Egfr和her2基因突变检测试剂盒、检测方法及其应用 |
| WO2019160264A1 (ko) * | 2018-02-14 | 2019-08-22 | 엘지전자 주식회사 | 페로브스카이트 태양전지를 포함하는 태양전지 모듈 및 그 제조 방법 |
| US11329177B2 (en) | 2018-11-08 | 2022-05-10 | Swift Solar Inc | Stable perovskite module interconnects |
| CN109524551B (zh) * | 2018-11-26 | 2021-01-19 | 西安交通大学 | 绒面均匀钙钛矿膜的液膜速涂气刀速干法抑爬原位析晶连续制备方法 |
| CN109545974B (zh) * | 2018-11-26 | 2021-01-19 | 西安交通大学 | 绒面均匀钙钛矿膜的高粘液膜抑爬原位析晶制备方法 |
| CN109560198B (zh) * | 2018-11-26 | 2020-07-28 | 西安交通大学 | 绒面均匀钙钛矿膜的液膜冷气抑爬原位速干析晶制备方法 |
| CN109524553B (zh) * | 2018-11-26 | 2020-10-27 | 西安交通大学 | 绒面均匀钙钛矿膜的液膜速干抑爬原位析晶制备方法 |
| CN109545977B (zh) * | 2018-11-26 | 2020-07-28 | 西安交通大学 | 绒面均匀钙钛矿膜的液膜增稠抑爬原位析晶制备方法 |
| CN109524294B (zh) * | 2018-11-26 | 2021-03-23 | 西安交通大学 | 一步制备仿金字塔形全无机钙钛矿膜的方法 |
| CN109524552B (zh) * | 2018-11-26 | 2021-01-19 | 西安交通大学 | 两步制备仿金字塔形有机-无机杂化钙钛矿膜的方法 |
| KR102622592B1 (ko) * | 2018-12-03 | 2024-01-10 | 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양전지 |
| US12021163B2 (en) | 2018-12-27 | 2024-06-25 | First Solar, Inc. | Photovoltaic devices and methods of forming the same |
| US11631777B2 (en) | 2019-03-11 | 2023-04-18 | Swift Solar Inc. | Integration of bypass diodes within thin film photovoltaic module interconnects |
| JP7215321B2 (ja) * | 2019-05-16 | 2023-01-31 | 株式会社豊田中央研究所 | 人工光合成セル |
| CN110299451B (zh) * | 2019-06-26 | 2023-04-07 | 合肥工业大学 | 一种柔性钙钛矿-铜铟镓硒叠层太阳能电池及其制备方法 |
| EP3764406A1 (en) * | 2019-07-11 | 2021-01-13 | Oxford Photovoltaics Limited | Multi-junction photovoltaic device |
| WO2021030491A1 (en) | 2019-08-12 | 2021-02-18 | Arizona Board Of Regents On Behalf Of Arizona State University | Perovskite/silicon tandem photovoltaic device |
| KR102227526B1 (ko) * | 2019-09-19 | 2021-03-12 | 한국과학기술연구원 | 복층 구조의 페로브스카이트 및 그 제조방법 |
| US11398355B2 (en) | 2019-10-01 | 2022-07-26 | Seoul National University R&Db Foundation | Perovskite silicon tandem solar cell and method for manufacturing the same |
| WO2021127654A1 (en) * | 2019-12-20 | 2021-06-24 | Arizona Board Of Regents On Behalf Of Arizona State University | Bifacial tandem photovoltaic cells and modules |
| EP4084104A4 (en) | 2019-12-24 | 2023-06-07 | Panasonic Intellectual Property Management Co., Ltd. | SOLAR CELL |
| WO2021220925A1 (ja) * | 2020-04-27 | 2021-11-04 | パナソニックIpマネジメント株式会社 | 太陽電池 |
| CN115485872A (zh) | 2020-04-27 | 2022-12-16 | 松下知识产权经营株式会社 | 太阳能电池 |
| CN111733401B (zh) * | 2020-06-18 | 2021-10-22 | 浙江大学 | 一种高导热性无机铅卤钙钛矿复合薄膜的制备方法 |
| WO2022066707A1 (en) | 2020-09-22 | 2022-03-31 | Caelux Corporation | Methods and devices for integrated tandem solar module fabrication |
| FR3115929B1 (fr) * | 2020-11-05 | 2023-09-01 | Commissariat Energie Atomique | Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N |
| CN114583060A (zh) * | 2020-12-01 | 2022-06-03 | 杭州纤纳光电科技有限公司 | 钙钛矿薄膜节奏化沉积生产方法与设备 |
| US12136680B2 (en) * | 2020-12-18 | 2024-11-05 | The University Of Toledo | Architecture for efficient monolithic bifacial perovskite-CdSeTe tandem thin film solar cells and modules |
| FR3118298B1 (fr) | 2020-12-18 | 2023-06-23 | Commissariat Energie Atomique | Structure simplifiee de cellules solaires tandem a deux terminaux ayant un materiau de jonction en oxyde transparent conducteur |
| CN112687821B (zh) * | 2021-01-20 | 2022-03-25 | 福州大学 | 一种量子点智慧照明qled器件及其制备方法 |
| WO2022230628A1 (ja) * | 2021-04-26 | 2022-11-03 | キヤノン株式会社 | 光電変換素子、及びこれを有する光電変換モジュール、光電変換装置、移動体、建材 |
| CN113363279A (zh) * | 2021-06-18 | 2021-09-07 | 武汉理工大学 | 一种高效互联层及其双结钙钛矿/有机叠层太阳能电池 |
| KR20230008998A (ko) * | 2021-07-08 | 2023-01-17 | 한화솔루션 주식회사 | 페로브스카이트 층을 형성하기 위한 방법 |
| US12094663B2 (en) | 2021-09-30 | 2024-09-17 | Swift Solar Inc. | Bypass diode interconnect for thin film solar modules |
| WO2023076550A1 (en) * | 2021-10-28 | 2023-05-04 | The Regents Of The University Of California | Perovskite superlattices with efficient carrier dynamics |
| CN116133448B (zh) * | 2021-11-12 | 2026-01-09 | 西安隆基乐叶光伏科技有限公司 | 一种钙钛矿-硅基叠层太阳能电池及其制作方法 |
| JP7114821B1 (ja) * | 2022-03-18 | 2022-08-08 | 株式会社東芝 | 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法 |
| EP4601018A4 (en) * | 2022-11-30 | 2025-11-12 | Contemporary Amperex Technology Hong Kong Ltd | THIN-FILM SOLAR CELL AND ELECTRICAL DEVICE |
| US12154727B2 (en) | 2022-12-22 | 2024-11-26 | Swift Solar Inc. | Integrated bypass diode schemes for solar modules |
| CN116828879A (zh) | 2023-07-31 | 2023-09-29 | 晶科能源股份有限公司 | 叠层电池及其制备方法、光伏组件 |
| CN119923177A (zh) * | 2023-10-31 | 2025-05-02 | 宁德时代新能源科技股份有限公司 | 钙钛矿薄膜、钙钛矿电池、制备方法和用电装置 |
| CN117500345A (zh) * | 2023-11-01 | 2024-02-02 | 通威太阳能(成都)有限公司 | 钙钛矿层的制备方法、钙钛矿叠层太阳电池及其制备方法 |
| JP7808653B1 (ja) | 2024-08-28 | 2026-01-29 | シャープエネルギーソリューション株式会社 | 光電変換素子および光電変換モジュール |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5186673B2 (ja) * | 2008-04-03 | 2013-04-17 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| KR101029331B1 (ko) * | 2008-09-26 | 2011-04-15 | 고려대학교 산학협력단 | 태양전지용 실리콘 웨이퍼의 텍스쳐링 방법, 이에 의하여 텍스쳐링된 태양전지용 실리콘 웨이퍼 및 이를 포함하는 태양전지 |
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2015
- 2015-06-12 GB GBGB1510351.8A patent/GB201510351D0/en not_active Ceased
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2016
- 2016-06-10 EP EP16729359.6A patent/EP3308412A1/en active Pending
- 2016-06-10 KR KR1020187000705A patent/KR102630952B1/ko active Active
- 2016-06-10 AU AU2016275301A patent/AU2016275301A1/en not_active Abandoned
- 2016-06-10 CN CN201680034238.3A patent/CN107743530B/zh active Active
- 2016-06-10 US US15/735,740 patent/US11728098B2/en active Active
- 2016-06-10 JP JP2017564574A patent/JP7372731B2/ja active Active
- 2016-06-10 CN CN202110935559.3A patent/CN113659081B/zh active Active
- 2016-06-10 WO PCT/GB2016/051743 patent/WO2016198897A1/en not_active Ceased
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| Title |
|---|
| Bennett W. Schneider et al., OPTICS EXPRESS, 22 A1422-A1430(2014.8.28.)* |
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| US20230420192A1 (en) | 2023-12-28 |
| CN107743530A (zh) | 2018-02-27 |
| CN113659081A (zh) | 2021-11-16 |
| WO2016198897A1 (en) | 2016-12-15 |
| US11728098B2 (en) | 2023-08-15 |
| GB201510351D0 (en) | 2015-07-29 |
| US20180174761A1 (en) | 2018-06-21 |
| US20250149260A1 (en) | 2025-05-08 |
| JP2018518845A (ja) | 2018-07-12 |
| AU2016275301A1 (en) | 2017-12-21 |
| CN107743530B (zh) | 2021-11-09 |
| US12230455B2 (en) | 2025-02-18 |
| JP2022189847A (ja) | 2022-12-22 |
| CN113659081B (zh) | 2025-08-19 |
| KR20180016547A (ko) | 2018-02-14 |
| JP7372731B2 (ja) | 2023-11-01 |
| EP3308412A1 (en) | 2018-04-18 |
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