GB201510351D0 - Method of depositioning a perovskite material - Google Patents

Method of depositioning a perovskite material

Info

Publication number
GB201510351D0
GB201510351D0 GBGB1510351.8A GB201510351A GB201510351D0 GB 201510351 D0 GB201510351 D0 GB 201510351D0 GB 201510351 A GB201510351 A GB 201510351A GB 201510351 D0 GB201510351 D0 GB 201510351D0
Authority
GB
United Kingdom
Prior art keywords
depositioning
perovskite material
perovskite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1510351.8A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford Photovoltaics Ltd
Original Assignee
Oxford Photovoltaics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford Photovoltaics Ltd filed Critical Oxford Photovoltaics Ltd
Priority to GBGB1510351.8A priority Critical patent/GB201510351D0/en
Publication of GB201510351D0 publication Critical patent/GB201510351D0/en
Priority to AU2016275301A priority patent/AU2016275301A1/en
Priority to US15/735,740 priority patent/US11728098B2/en
Priority to PCT/GB2016/051743 priority patent/WO2016198897A1/en
Priority to CN201680034238.3A priority patent/CN107743530B/zh
Priority to JP2017564574A priority patent/JP7372731B2/ja
Priority to KR1020187000705A priority patent/KR102630952B1/ko
Priority to CN202110935559.3A priority patent/CN113659081B/zh
Priority to EP16729359.6A priority patent/EP3308412A1/en
Priority to JP2022161352A priority patent/JP2022189847A/ja
Priority to US18/339,599 priority patent/US12230455B2/en
Priority to US19/013,422 priority patent/US20250149260A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0036—Formation of the solid electrolyte layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
GBGB1510351.8A 2015-06-12 2015-06-12 Method of depositioning a perovskite material Ceased GB201510351D0 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
GBGB1510351.8A GB201510351D0 (en) 2015-06-12 2015-06-12 Method of depositioning a perovskite material
EP16729359.6A EP3308412A1 (en) 2015-06-12 2016-06-10 Method of depositing a perovskite material
CN201680034238.3A CN107743530B (zh) 2015-06-12 2016-06-10 沉积钙钛矿材料的方法
US15/735,740 US11728098B2 (en) 2015-06-12 2016-06-10 Method of depositing a perovskite material
PCT/GB2016/051743 WO2016198897A1 (en) 2015-06-12 2016-06-10 Method of depositing a perovskite material
AU2016275301A AU2016275301A1 (en) 2015-06-12 2016-06-10 Method of depositing a perovskite material
JP2017564574A JP7372731B2 (ja) 2015-06-12 2016-06-10 ペロブスカイト材料を堆積させる方法
KR1020187000705A KR102630952B1 (ko) 2015-06-12 2016-06-10 페로브스카이트 재료의 침착 방법
CN202110935559.3A CN113659081B (zh) 2015-06-12 2016-06-10 沉积钙钛矿材料的方法
JP2022161352A JP2022189847A (ja) 2015-06-12 2022-10-06 ペロブスカイト材料を堆積させる方法
US18/339,599 US12230455B2 (en) 2015-06-12 2023-06-22 Method of depositing a perovskite material
US19/013,422 US20250149260A1 (en) 2015-06-12 2025-01-08 Method of depositing a perovskite material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1510351.8A GB201510351D0 (en) 2015-06-12 2015-06-12 Method of depositioning a perovskite material

Publications (1)

Publication Number Publication Date
GB201510351D0 true GB201510351D0 (en) 2015-07-29

Family

ID=53784644

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1510351.8A Ceased GB201510351D0 (en) 2015-06-12 2015-06-12 Method of depositioning a perovskite material

Country Status (8)

Country Link
US (3) US11728098B2 (https=)
EP (1) EP3308412A1 (https=)
JP (2) JP7372731B2 (https=)
KR (1) KR102630952B1 (https=)
CN (2) CN107743530B (https=)
AU (1) AU2016275301A1 (https=)
GB (1) GB201510351D0 (https=)
WO (1) WO2016198897A1 (https=)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016200897A1 (en) * 2015-06-08 2016-12-15 The Florida State University Research Foundation, Inc. Single-layer light-emitting diodes using organometallic halide perovskite/ionic-conducting polymer composite
WO2017195722A1 (ja) * 2016-05-09 2017-11-16 株式会社カネカ 積層型光電変換装置およびその製造方法
KR102068871B1 (ko) * 2016-07-14 2020-01-21 주식회사 엘지화학 유무기 복합 태양전지
US20180254362A1 (en) * 2017-03-01 2018-09-06 Brown University Mixed tin and germanium perovskites
US9991408B1 (en) * 2017-04-13 2018-06-05 International Business Machines Corporation Monolithically integrated high voltage photovoltaics and light emitting diode with textured surface
KR102541379B1 (ko) 2017-05-29 2023-06-08 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 페로브스카이트 실리콘 탠덤 태양전지 및 제조 방법
CN107482069A (zh) * 2017-07-10 2017-12-15 宋亮 一种多结化合物太阳能电池及其生产工艺
CN108220442B (zh) * 2018-01-10 2021-07-02 昆山德诺瑞尔生物科技有限公司 Egfr和her2基因突变检测试剂盒、检测方法及其应用
WO2019160264A1 (ko) * 2018-02-14 2019-08-22 엘지전자 주식회사 페로브스카이트 태양전지를 포함하는 태양전지 모듈 및 그 제조 방법
US11329177B2 (en) 2018-11-08 2022-05-10 Swift Solar Inc Stable perovskite module interconnects
CN109524551B (zh) * 2018-11-26 2021-01-19 西安交通大学 绒面均匀钙钛矿膜的液膜速涂气刀速干法抑爬原位析晶连续制备方法
CN109545974B (zh) * 2018-11-26 2021-01-19 西安交通大学 绒面均匀钙钛矿膜的高粘液膜抑爬原位析晶制备方法
CN109560198B (zh) * 2018-11-26 2020-07-28 西安交通大学 绒面均匀钙钛矿膜的液膜冷气抑爬原位速干析晶制备方法
CN109524553B (zh) * 2018-11-26 2020-10-27 西安交通大学 绒面均匀钙钛矿膜的液膜速干抑爬原位析晶制备方法
CN109545977B (zh) * 2018-11-26 2020-07-28 西安交通大学 绒面均匀钙钛矿膜的液膜增稠抑爬原位析晶制备方法
CN109524294B (zh) * 2018-11-26 2021-03-23 西安交通大学 一步制备仿金字塔形全无机钙钛矿膜的方法
CN109524552B (zh) * 2018-11-26 2021-01-19 西安交通大学 两步制备仿金字塔形有机-无机杂化钙钛矿膜的方法
KR102622592B1 (ko) * 2018-12-03 2024-01-10 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양전지
US12021163B2 (en) 2018-12-27 2024-06-25 First Solar, Inc. Photovoltaic devices and methods of forming the same
US11631777B2 (en) 2019-03-11 2023-04-18 Swift Solar Inc. Integration of bypass diodes within thin film photovoltaic module interconnects
JP7215321B2 (ja) * 2019-05-16 2023-01-31 株式会社豊田中央研究所 人工光合成セル
CN110299451B (zh) * 2019-06-26 2023-04-07 合肥工业大学 一种柔性钙钛矿-铜铟镓硒叠层太阳能电池及其制备方法
EP3764406A1 (en) * 2019-07-11 2021-01-13 Oxford Photovoltaics Limited Multi-junction photovoltaic device
WO2021030491A1 (en) 2019-08-12 2021-02-18 Arizona Board Of Regents On Behalf Of Arizona State University Perovskite/silicon tandem photovoltaic device
KR102227526B1 (ko) * 2019-09-19 2021-03-12 한국과학기술연구원 복층 구조의 페로브스카이트 및 그 제조방법
US11398355B2 (en) 2019-10-01 2022-07-26 Seoul National University R&Db Foundation Perovskite silicon tandem solar cell and method for manufacturing the same
WO2021127654A1 (en) * 2019-12-20 2021-06-24 Arizona Board Of Regents On Behalf Of Arizona State University Bifacial tandem photovoltaic cells and modules
EP4084104A4 (en) 2019-12-24 2023-06-07 Panasonic Intellectual Property Management Co., Ltd. SOLAR CELL
WO2021220925A1 (ja) * 2020-04-27 2021-11-04 パナソニックＩｐマネジメント株式会社 太陽電池
CN115485872A (zh) 2020-04-27 2022-12-16 松下知识产权经营株式会社 太阳能电池
CN111733401B (zh) * 2020-06-18 2021-10-22 浙江大学 一种高导热性无机铅卤钙钛矿复合薄膜的制备方法
WO2022066707A1 (en) 2020-09-22 2022-03-31 Caelux Corporation Methods and devices for integrated tandem solar module fabrication
FR3115929B1 (fr) * 2020-11-05 2023-09-01 Commissariat Energie Atomique Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N
CN114583060A (zh) * 2020-12-01 2022-06-03 杭州纤纳光电科技有限公司 钙钛矿薄膜节奏化沉积生产方法与设备
US12136680B2 (en) * 2020-12-18 2024-11-05 The University Of Toledo Architecture for efficient monolithic bifacial perovskite-CdSeTe tandem thin film solar cells and modules
FR3118298B1 (fr) 2020-12-18 2023-06-23 Commissariat Energie Atomique Structure simplifiee de cellules solaires tandem a deux terminaux ayant un materiau de jonction en oxyde transparent conducteur
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WO2022230628A1 (ja) * 2021-04-26 2022-11-03 キヤノン株式会社 光電変換素子、及びこれを有する光電変換モジュール、光電変換装置、移動体、建材
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US12094663B2 (en) 2021-09-30 2024-09-17 Swift Solar Inc. Bypass diode interconnect for thin film solar modules
WO2023076550A1 (en) * 2021-10-28 2023-05-04 The Regents Of The University Of California Perovskite superlattices with efficient carrier dynamics
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JP7114821B1 (ja) * 2022-03-18 2022-08-08 株式会社東芝 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法
EP4601018A4 (en) * 2022-11-30 2025-11-12 Contemporary Amperex Technology Hong Kong Ltd THIN-FILM SOLAR CELL AND ELECTRICAL DEVICE
US12154727B2 (en) 2022-12-22 2024-11-26 Swift Solar Inc. Integrated bypass diode schemes for solar modules
CN116828879A (zh) 2023-07-31 2023-09-29 晶科能源股份有限公司 叠层电池及其制备方法、光伏组件
CN119923177A (zh) * 2023-10-31 2025-05-02 宁德时代新能源科技股份有限公司 钙钛矿薄膜、钙钛矿电池、制备方法和用电装置
CN117500345A (zh) * 2023-11-01 2024-02-02 通威太阳能（成都）有限公司 钙钛矿层的制备方法、钙钛矿叠层太阳电池及其制备方法
JP7808653B1 (ja) 2024-08-28 2026-01-29 シャープエネルギーソリューション株式会社 光電変換素子および光電変換モジュール

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5186673B2 (ja) * 2008-04-03 2013-04-17 信越化学工業株式会社 太陽電池の製造方法
KR101029331B1 (ko) * 2008-09-26 2011-04-15 고려대학교 산학협력단 태양전지용 실리콘 웨이퍼의 텍스쳐링 방법, 이에 의하여 텍스쳐링된 태양전지용 실리콘 웨이퍼 및 이를 포함하는 태양전지
US9070803B2 (en) * 2010-05-11 2015-06-30 Molecular Imprints, Inc. Nanostructured solar cell
GB201208793D0 (en) 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
AU2013319979B2 (en) * 2012-09-18 2016-08-25 Oxford Photovoltaics Limited Optoelectronic device
CN105493304B (zh) * 2013-08-06 2020-01-31 新南创新私人有限公司 高效堆叠的太阳能电池
EP3058595A4 (en) * 2013-10-16 2017-03-08 Omnipv, Inc. Photovoltaic cells including halide materials
CN104134720A (zh) * 2014-07-10 2014-11-05 上海大学 单源闪蒸法生长有机无机杂化钙钛矿材料及其平面型太阳能电池的制备方法
CN104393109B (zh) 2014-10-28 2016-05-11 合肥工业大学 一种钙钛矿太阳能电池的化学气相沉积制备方法
CN104404478A (zh) * 2014-11-24 2015-03-11 天津理工大学 一种有机铵金属卤化物薄膜的制备方法
WO2016094966A1 (en) * 2014-12-19 2016-06-23 Commonwealth Scientific And Industrial Research Organisation Process of forming a photoactive layer of an optoelectronic device
WO2016157979A1 (ja) * 2015-03-31 2016-10-06 株式会社カネカ 光電変換装置および光電変換モジュール

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