FR3115929B1 - Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N - Google Patents

Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N Download PDF

Info

Publication number
FR3115929B1
FR3115929B1 FR2011346A FR2011346A FR3115929B1 FR 3115929 B1 FR3115929 B1 FR 3115929B1 FR 2011346 A FR2011346 A FR 2011346A FR 2011346 A FR2011346 A FR 2011346A FR 3115929 B1 FR3115929 B1 FR 3115929B1
Authority
FR
France
Prior art keywords
perovskite
cell
based sub
composite layer
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2011346A
Other languages
English (en)
Other versions
FR3115929A1 (fr
Inventor
Matthieu Manceau
Olivier Dupre
Noella Lemaitre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3sun It Srl
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Enel Green Power Italia SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR2011346A priority Critical patent/FR3115929B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA, Enel Green Power Italia SRL filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/FR2021/051876 priority patent/WO2022096802A1/fr
Priority to US18/251,844 priority patent/US20240008296A1/en
Priority to AU2021375370A priority patent/AU2021375370A1/en
Priority to CA3197677A priority patent/CA3197677A1/fr
Priority to CN202180083704.8A priority patent/CN117321780A/zh
Priority to EP21810412.3A priority patent/EP4241305A1/fr
Publication of FR3115929A1 publication Critical patent/FR3115929A1/fr
Application granted granted Critical
Publication of FR3115929B1 publication Critical patent/FR3115929B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N La présente invention se rapporte à un dispositif photovoltaïque tandem, comprenant, dans cet ordre de superposition : A/ une sous-cellule A à base de silicium, en particulier à hétérojonction de silicium ou encore d’architecture TOPCon ; et B/ une sous-cellule B à base de pérovskite, comprenant au moins : - une couche conductrice ou semi-conductrice de type N dans le cas d’une structure NIP, ou de type P dans le cas d’une structure PIN, et - une couche composite, superposée à ladite couche conductrice ou semi-conductrice inférieure, comprenant au moins un matériau pérovskite et au moins un matériau de type P dans le cas d’une structure NIP ou de type N dans le cas d’une structure PIN, et présentant un gradient du ratio massique matériau pérovskite/matériau P dans le cas d’une structure NIP ou matériau pérovskite/matériau N dans le cas d’une structure PIN, décroissant dans le sens de l’interface entre ladite couche composite et ladite couche conductrice ou semi-conductrice inférieure vers la face opposée de ladite couche composite.
FR2011346A 2020-11-05 2020-11-05 Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N Active FR3115929B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR2011346A FR3115929B1 (fr) 2020-11-05 2020-11-05 Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N
US18/251,844 US20240008296A1 (en) 2020-11-05 2021-10-25 Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising a p- or n-type material/perovskite composite layer
AU2021375370A AU2021375370A1 (en) 2020-11-05 2021-10-25 Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising a p- or n-type material/perovskite composite layer
CA3197677A CA3197677A1 (fr) 2020-11-05 2021-10-25 Dispositif photovoltaique tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche composite perovskite/materiau de type p ou
PCT/FR2021/051876 WO2022096802A1 (fr) 2020-11-05 2021-10-25 Dispositif photovoltaïque tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche composite perovskite/materiau de type p ou n
CN202180083704.8A CN117321780A (zh) 2020-11-05 2021-10-25 硅基子电池与包括有p型或n型材料/钙钛矿复合层的钙钛矿基子电池组合的串联光伏器件
EP21810412.3A EP4241305A1 (fr) 2020-11-05 2021-10-25 Dispositif photovoltaïque tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche composite perovskite/materiau de type p ou n

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2011346A FR3115929B1 (fr) 2020-11-05 2020-11-05 Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N
FR2011346 2020-11-05

Publications (2)

Publication Number Publication Date
FR3115929A1 FR3115929A1 (fr) 2022-05-06
FR3115929B1 true FR3115929B1 (fr) 2023-09-01

Family

ID=74095888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2011346A Active FR3115929B1 (fr) 2020-11-05 2020-11-05 Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N

Country Status (7)

Country Link
US (1) US20240008296A1 (fr)
EP (1) EP4241305A1 (fr)
CN (1) CN117321780A (fr)
AU (1) AU2021375370A1 (fr)
CA (1) CA3197677A1 (fr)
FR (1) FR3115929B1 (fr)
WO (1) WO2022096802A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3104816A1 (fr) * 2019-12-12 2021-06-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Couche composite pérovskite/matériau de type P ou de type N dans un dispositif photovoltaïque

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136408B2 (en) 2013-11-26 2015-09-15 Hunt Energy Enterprises, Llc Perovskite and other solar cell materials
GB201510351D0 (en) * 2015-06-12 2015-07-29 Oxford Photovoltaics Ltd Method of depositioning a perovskite material

Also Published As

Publication number Publication date
CA3197677A1 (fr) 2022-05-12
EP4241305A1 (fr) 2023-09-13
US20240008296A1 (en) 2024-01-04
WO2022096802A1 (fr) 2022-05-12
CN117321780A (zh) 2023-12-29
FR3115929A1 (fr) 2022-05-06
AU2021375370A1 (en) 2023-06-22

Similar Documents

Publication Publication Date Title
TWI266439B (en) Semiconductor light emitting device and its manufacturing method
CA2456679A1 (fr) Dispositif a semiconducteurs et son procede de fabrication
FR3115929B1 (fr) Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N
ATE512269T1 (de) Erdbebenisolator mit schiebependel
FR3033044B1 (fr) Dispositif de detection de rayonnement comportant une structure d'encapsulation a tenue mecanique amelioree
EP1993138A3 (fr) Dispositif à transistor à canal contraint
FR3079350B1 (fr) Dispositif d'affichage emissif a led et procede de fabrication d'un tel dispositif
FR2576711A1 (fr) Transistor a effet de champ a heterojonction
FR2986901B1 (fr) Substrat microelectronique comprenant une couche de materiau organique enterree
FR3076170A1 (fr) Procede de report de structures electroluminescentes
FR2922310B1 (fr) Transducteur a semi conducteurs,et son utilisation dans un capteur d'especes donneuses ou acceptrices d'electrons.
EP4336544A3 (fr) Structure semi-conductrice à tenue en tension améliorée
US9972708B2 (en) Double heterojunction field effect transistor with polarization compensated layer
FR3099637B1 (fr) procédé de fabrication d’unE structure composite comprenant une couche mince en Sic monocristallin sur un substrat support en sic polycristallin
FR3129248B1 (fr) Photodiode germanium à courant d’obscurité réduit comportant une portion intermédiaire périphérique à base de SiGe/Ge
CN102401840A (zh) Si基HEMT嵌入式微加速度计及其生产方法
FR3004002A1 (fr) Procede d'assemblage avance de cellule photovoltaique concentree
FR3093862B1 (fr) Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN
JP5249307B2 (ja) 半導体装置
WO2009001647A1 (fr) Convertisseur photoélectrique, convertisseur photoélectrique intégré et procédé de fabrication du convertisseur photoélectrique
FR3115928B1 (fr) Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé
WO2023037430A1 (fr) Dispositif à semi-conducteurs
FR3076400B1 (fr) Dispositif thermoelectrique a jonction thermoelectrique formee dans l’epaisseur d’un substrat et procede de fabrication du dispositif thermoelectrique
FR3085537B1 (fr) Tranche soi et son procede de production
FR3118166B1 (fr) Dispositif pour mesurer localement une contrainte mécanique normale exercée par un élément de contact

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20220506

PLFP Fee payment

Year of fee payment: 3

TQ Partial transmission of property

Owner name: 3SUN S.R.L., IT

Effective date: 20230103

Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERG, FR

Effective date: 20230103

PLFP Fee payment

Year of fee payment: 4