FR3115928B1 - Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé - Google Patents
Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé Download PDFInfo
- Publication number
- FR3115928B1 FR3115928B1 FR2011348A FR2011348A FR3115928B1 FR 3115928 B1 FR3115928 B1 FR 3115928B1 FR 2011348 A FR2011348 A FR 2011348A FR 2011348 A FR2011348 A FR 2011348A FR 3115928 B1 FR3115928 B1 FR 3115928B1
- Authority
- FR
- France
- Prior art keywords
- cell
- based sub
- perovskite
- conductive
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052799 carbon Inorganic materials 0.000 title abstract 3
- 239000002184 metal Substances 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé La présente invention se rapporte à un dispositif photovoltaïque tandem, comprenant, dans cet ordre de superposition :A/ une sous-cellule A à base de silicium, en particulier à hétérojonction de silicium ou d’architecture TOPCon ;et B/ une sous-cellule B à base de pérovskite, comprenant au moins :- une couche conductrice ou semi-conductrice de type N (ETL) ;- une couche conductrice ou semi-conductrice de type P (HTL) ; et- une couche active de type pérovskite, intercalée entre lesdites couches conductrices ou semi-conductrices de type N et de type P,dans laquelle ladite couche conductrice ou semi-conductrice de type N est à base de nanoparticules individualisées d’oxyde(s) métallique(s) de type N, et présente un taux de carbone inférieur ou égal à 20 % atomique.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2011348A FR3115928B1 (fr) | 2020-11-05 | 2020-11-05 | Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé |
CN202180083726.4A CN117280886A (zh) | 2020-11-05 | 2021-10-25 | 硅基子电池与包括有碳含量受控的n层的钙钛矿基子电池组合的串联光伏器件 |
US18/251,920 US20240016052A1 (en) | 2020-11-05 | 2021-10-25 | Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell including an n-layer with controlled carbon content |
PCT/FR2021/051874 WO2022096801A1 (fr) | 2020-11-05 | 2021-10-25 | Dispositif photovoltaïque tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche n a taux de carbone controle |
EP21810411.5A EP4241319A1 (fr) | 2020-11-05 | 2021-10-25 | Dispositif photovoltaïque tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche n a taux de carbone controle |
AU2021374854A AU2021374854A1 (en) | 2020-11-05 | 2021-10-25 | Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising an n-layer with controlled carbon content |
CA3197682A CA3197682A1 (fr) | 2020-11-05 | 2021-10-25 | Dispositif photovoltaique tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche n a taux de carbone controle |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2011348A FR3115928B1 (fr) | 2020-11-05 | 2020-11-05 | Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé |
FR2011348 | 2020-11-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3115928A1 FR3115928A1 (fr) | 2022-05-06 |
FR3115928B1 true FR3115928B1 (fr) | 2023-05-12 |
Family
ID=74095889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2011348A Active FR3115928B1 (fr) | 2020-11-05 | 2020-11-05 | Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé |
Country Status (7)
Country | Link |
---|---|
US (1) | US20240016052A1 (fr) |
EP (1) | EP4241319A1 (fr) |
CN (1) | CN117280886A (fr) |
AU (1) | AU2021374854A1 (fr) |
CA (1) | CA3197682A1 (fr) |
FR (1) | FR3115928B1 (fr) |
WO (1) | WO2022096801A1 (fr) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9136408B2 (en) | 2013-11-26 | 2015-09-15 | Hunt Energy Enterprises, Llc | Perovskite and other solar cell materials |
-
2020
- 2020-11-05 FR FR2011348A patent/FR3115928B1/fr active Active
-
2021
- 2021-10-25 EP EP21810411.5A patent/EP4241319A1/fr active Pending
- 2021-10-25 CN CN202180083726.4A patent/CN117280886A/zh active Pending
- 2021-10-25 WO PCT/FR2021/051874 patent/WO2022096801A1/fr active Application Filing
- 2021-10-25 CA CA3197682A patent/CA3197682A1/fr active Pending
- 2021-10-25 AU AU2021374854A patent/AU2021374854A1/en active Pending
- 2021-10-25 US US18/251,920 patent/US20240016052A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
AU2021374854A9 (en) | 2024-06-20 |
US20240016052A1 (en) | 2024-01-11 |
CA3197682A1 (fr) | 2022-05-12 |
WO2022096801A1 (fr) | 2022-05-12 |
AU2021374854A1 (en) | 2023-06-22 |
EP4241319A1 (fr) | 2023-09-13 |
FR3115928A1 (fr) | 2022-05-06 |
CN117280886A (zh) | 2023-12-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11737378B2 (en) | Graphene/doped 2D layered material van der Waals heterojunction superconducting composite structure, superconducting device, and manufacturing method therefor | |
JP6562222B2 (ja) | 窒化物半導体装置 | |
US6326294B1 (en) | Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices | |
WO2012140795A1 (fr) | Dispositif semi-conducteur au carbure de silicium et procédé de fabrication de celui-ci | |
WO2015137420A1 (fr) | Procédé de fabrication de dispositif semi-conducteur au carbure de silicium et dispositif semi-conducteur au carbure de silicium | |
FR3115928B1 (fr) | Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé | |
JP4501488B2 (ja) | 炭化珪素半導体のオーミック電極及びその製造方法 | |
JP2006135241A (ja) | 半導体装置 | |
JPH0355980B2 (fr) | ||
KR102634054B1 (ko) | 일렉트라이드 전극을 포함하는 트랜지스터 | |
FR3102887B1 (fr) | Couche N à taux de carbone contrôlé dans un dispositif photovoltaïque de type pérovskite | |
JP6582537B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US20200211861A1 (en) | Die bonding process for manufacturing semiconductor device and semiconductor device manufactured thereby | |
JPH01268121A (ja) | シリコン系半導体素子のオーミック電極形成方法 | |
WO2021210095A1 (fr) | Dispositif à semi-conducteur, système de calcul de réservoir et procédé de fabrication de dispositif à semi-conducteur | |
US8896075B2 (en) | Semiconductor radiation detector with thin film platinum alloyed electrode | |
RU189681U1 (ru) | Монолитный алмазный ΔE-Е детектор | |
JP7505402B2 (ja) | 炭化珪素半導体ウェハおよび炭化珪素半導体装置の製造方法 | |
JPH044757B2 (fr) | ||
CN117276352B (zh) | 一种晶体管结构及其制备方法、记录媒体和系统 | |
JP2001339080A (ja) | 光起電力装置の製造方法 | |
JPS61183970A (ja) | 薄膜トランジスタ | |
JP2021163787A (ja) | 導電性保護膜および太陽電池 | |
JPS62211916A (ja) | 半導体装置の製法 | |
CN114678441A (zh) | 基于预氧化处理技术的4H-SiC场效应光电晶体管及制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20220506 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
TQ | Partial transmission of property |
Owner name: 3SUN S.R.L., IT Effective date: 20230103 Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERG, FR Effective date: 20230103 |
|
PLFP | Fee payment |
Year of fee payment: 4 |