FR3115928B1 - Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé - Google Patents

Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé Download PDF

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Publication number
FR3115928B1
FR3115928B1 FR2011348A FR2011348A FR3115928B1 FR 3115928 B1 FR3115928 B1 FR 3115928B1 FR 2011348 A FR2011348 A FR 2011348A FR 2011348 A FR2011348 A FR 2011348A FR 3115928 B1 FR3115928 B1 FR 3115928B1
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FR
France
Prior art keywords
cell
based sub
perovskite
conductive
layer
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Active
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FR2011348A
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English (en)
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FR3115928A1 (fr
Inventor
Matthieu Manceau
Stéphane Cros
Pia Dally
Olivier Dupre
Noella Lemaitre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3sun It Srl
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Enel Green Power Italia SRL
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Publication date
Priority to FR2011348A priority Critical patent/FR3115928B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA, Enel Green Power Italia SRL filed Critical Commissariat a lEnergie Atomique CEA
Priority to CA3197682A priority patent/CA3197682A1/fr
Priority to PCT/FR2021/051874 priority patent/WO2022096801A1/fr
Priority to AU2021374854A priority patent/AU2021374854A1/en
Priority to CN202180083726.4A priority patent/CN117280886A/zh
Priority to EP21810411.5A priority patent/EP4241319A1/fr
Priority to US18/251,920 priority patent/US20240016052A1/en
Publication of FR3115928A1 publication Critical patent/FR3115928A1/fr
Application granted granted Critical
Publication of FR3115928B1 publication Critical patent/FR3115928B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé La présente invention se rapporte à un dispositif photovoltaïque tandem, comprenant, dans cet ordre de superposition :A/ une sous-cellule A à base de silicium, en particulier à hétérojonction de silicium ou d’architecture TOPCon ;et B/ une sous-cellule B à base de pérovskite, comprenant au moins :- une couche conductrice ou semi-conductrice de type N (ETL) ;- une couche conductrice ou semi-conductrice de type P (HTL) ; et- une couche active de type pérovskite, intercalée entre lesdites couches conductrices ou semi-conductrices de type N et de type P,dans laquelle ladite couche conductrice ou semi-conductrice de type N est à base de nanoparticules individualisées d’oxyde(s) métallique(s) de type N, et présente un taux de carbone inférieur ou égal à 20 % atomique.
FR2011348A 2020-11-05 2020-11-05 Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé Active FR3115928B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR2011348A FR3115928B1 (fr) 2020-11-05 2020-11-05 Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé
PCT/FR2021/051874 WO2022096801A1 (fr) 2020-11-05 2021-10-25 Dispositif photovoltaïque tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche n a taux de carbone controle
AU2021374854A AU2021374854A1 (en) 2020-11-05 2021-10-25 Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising an n-layer with controlled carbon content
CN202180083726.4A CN117280886A (zh) 2020-11-05 2021-10-25 硅基子电池与包括有碳含量受控的n层的钙钛矿基子电池组合的串联光伏器件
CA3197682A CA3197682A1 (fr) 2020-11-05 2021-10-25 Dispositif photovoltaique tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche n a taux de carbone controle
EP21810411.5A EP4241319A1 (fr) 2020-11-05 2021-10-25 Dispositif photovoltaïque tandem combinant une sous-cellule a base de silicium et une sous-cellule a base de perovskite comportant une couche n a taux de carbone controle
US18/251,920 US20240016052A1 (en) 2020-11-05 2021-10-25 Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell including an n-layer with controlled carbon content

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2011348 2020-11-05
FR2011348A FR3115928B1 (fr) 2020-11-05 2020-11-05 Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé

Publications (2)

Publication Number Publication Date
FR3115928A1 FR3115928A1 (fr) 2022-05-06
FR3115928B1 true FR3115928B1 (fr) 2023-05-12

Family

ID=74095889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2011348A Active FR3115928B1 (fr) 2020-11-05 2020-11-05 Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche N à taux de carbone contrôlé

Country Status (7)

Country Link
US (1) US20240016052A1 (fr)
EP (1) EP4241319A1 (fr)
CN (1) CN117280886A (fr)
AU (1) AU2021374854A1 (fr)
CA (1) CA3197682A1 (fr)
FR (1) FR3115928B1 (fr)
WO (1) WO2022096801A1 (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136408B2 (en) 2013-11-26 2015-09-15 Hunt Energy Enterprises, Llc Perovskite and other solar cell materials

Also Published As

Publication number Publication date
WO2022096801A1 (fr) 2022-05-12
EP4241319A1 (fr) 2023-09-13
AU2021374854A1 (en) 2023-06-22
CN117280886A (zh) 2023-12-22
FR3115928A1 (fr) 2022-05-06
AU2021374854A9 (en) 2024-06-20
US20240016052A1 (en) 2024-01-11
CA3197682A1 (fr) 2022-05-12

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