KR102562158B1 - 높은 종횡비 패턴을 위한 구리 전착 용액 및 공정 - Google Patents
높은 종횡비 패턴을 위한 구리 전착 용액 및 공정 Download PDFInfo
- Publication number
- KR102562158B1 KR102562158B1 KR1020197020176A KR20197020176A KR102562158B1 KR 102562158 B1 KR102562158 B1 KR 102562158B1 KR 1020197020176 A KR1020197020176 A KR 1020197020176A KR 20197020176 A KR20197020176 A KR 20197020176A KR 102562158 B1 KR102562158 B1 KR 102562158B1
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- concentration
- electrolyte
- pattern
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010949 copper Substances 0.000 title claims abstract description 120
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 117
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000004070 electrodeposition Methods 0.000 title claims description 50
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 104
- 239000003792 electrolyte Substances 0.000 claims abstract description 54
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000008139 complexing agent Substances 0.000 claims abstract description 34
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 11
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 70
- 150000004982 aromatic amines Chemical class 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 230000000536 complexating effect Effects 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 14
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 150000003892 tartrate salts Chemical class 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000002848 electrochemical method Methods 0.000 claims 5
- 125000002883 imidazolyl group Chemical group 0.000 claims 1
- 150000003141 primary amines Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 4
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 83
- 229940012017 ethylenediamine Drugs 0.000 description 19
- 238000007747 plating Methods 0.000 description 18
- 238000005240 physical vapour deposition Methods 0.000 description 17
- 239000010941 cobalt Substances 0.000 description 15
- 229910017052 cobalt Inorganic materials 0.000 description 15
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 15
- 230000010287 polarization Effects 0.000 description 15
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 13
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 13
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000004627 transmission electron microscopy Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- -1 i.e. Chemical compound 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000010668 complexation reaction Methods 0.000 description 6
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 6
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 150000004699 copper complex Chemical class 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229940095064 tartrate Drugs 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical group C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- QQVDJLLNRSOCEL-UHFFFAOYSA-N (2-aminoethyl)phosphonic acid Chemical compound [NH3+]CCP(O)([O-])=O QQVDJLLNRSOCEL-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-L L-tartrate(2-) Chemical group [O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-L 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 2
- RSJOBNMOMQFPKQ-UHFFFAOYSA-L copper;2,3-dihydroxybutanedioate Chemical compound [Cu+2].[O-]C(=O)C(O)C(O)C([O-])=O RSJOBNMOMQFPKQ-UHFFFAOYSA-L 0.000 description 2
- AQEDFGUKQJUMBV-UHFFFAOYSA-N copper;ethane-1,2-diamine Chemical class [Cu].NCCN AQEDFGUKQJUMBV-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000003916 ethylene diamine group Chemical group 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 150000003222 pyridines Chemical class 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical group 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- KJFVITRRNTVAPC-UHFFFAOYSA-L tetramethylazanium;sulfate Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.[O-]S([O-])(=O)=O KJFVITRRNTVAPC-UHFFFAOYSA-L 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- WGJCBBASTRWVJL-UHFFFAOYSA-N 1,3-thiazolidine-2-thione Chemical compound SC1=NCCS1 WGJCBBASTRWVJL-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 description 1
- CYOIAXUAIXVWMU-UHFFFAOYSA-N 2-[2-aminoethyl(2-hydroxyethyl)amino]ethanol Chemical compound NCCN(CCO)CCO CYOIAXUAIXVWMU-UHFFFAOYSA-N 0.000 description 1
- LTPDITOEDOAWRU-UHFFFAOYSA-N 3,4-dihydroxybenzenesulfonic acid Chemical compound OC1=CC=C(S(O)(=O)=O)C=C1O LTPDITOEDOAWRU-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- OLQDGRQSFFQIIZ-UHFFFAOYSA-N copper;1h-imidazole Chemical class [Cu].C1=CNC=N1 OLQDGRQSFFQIIZ-UHFFFAOYSA-N 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- JGUQDUKBUKFFRO-CIIODKQPSA-N dimethylglyoxime Chemical compound O/N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-CIIODKQPSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229940048195 n-(hydroxyethyl)ethylenediaminetriacetic acid Drugs 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000001477 organic nitrogen group Chemical group 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 150000003142 primary aromatic amines Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBROZNQEVUILML-UHFFFAOYSA-N salicylhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1O HBROZNQEVUILML-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003336 secondary aromatic amines Chemical class 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- KUNICNFETYAKKO-UHFFFAOYSA-N sulfuric acid;pentahydrate Chemical compound O.O.O.O.O.OS(O)(=O)=O KUNICNFETYAKKO-UHFFFAOYSA-N 0.000 description 1
- 229960001124 trientine Drugs 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1663525 | 2016-12-29 | ||
| FR1663525A FR3061601B1 (fr) | 2016-12-29 | 2016-12-29 | Solution d'electrodeposition de cuivre et procede pour des motifs de facteur de forme eleve |
| PCT/EP2017/084580 WO2018122216A1 (en) | 2016-12-29 | 2017-12-26 | Copper electrodeposition solution and process for high aspect ratio patterns |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190097129A KR20190097129A (ko) | 2019-08-20 |
| KR102562158B1 true KR102562158B1 (ko) | 2023-08-01 |
Family
ID=59579658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197020176A Active KR102562158B1 (ko) | 2016-12-29 | 2017-12-26 | 높은 종횡비 패턴을 위한 구리 전착 용액 및 공정 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10883185B2 (enExample) |
| EP (1) | EP3562975A1 (enExample) |
| JP (1) | JP7138108B2 (enExample) |
| KR (1) | KR102562158B1 (enExample) |
| CN (1) | CN110168146B (enExample) |
| FR (1) | FR3061601B1 (enExample) |
| IL (1) | IL267531A (enExample) |
| TW (1) | TWI737880B (enExample) |
| WO (1) | WO2018122216A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110724983B (zh) * | 2019-10-12 | 2022-02-08 | 天津大学 | 一种利用脉冲电沉积法制备纳米铜包覆碳化钨核壳结构粉体的方法 |
| CN111041533B (zh) * | 2019-12-31 | 2021-06-29 | 苏州清飙科技有限公司 | 电镀纯钴用电镀液及其应用 |
| CN111244547B (zh) * | 2020-01-21 | 2021-09-17 | 四川虹微技术有限公司 | 一种含芳香肟类添加剂的电解液及其制备方法和用途 |
| US12070609B2 (en) * | 2020-07-30 | 2024-08-27 | Medtronic, Inc. | Electrical component and method of forming same |
| KR20240172193A (ko) | 2022-04-05 | 2024-12-09 | 맥더미드 엔쏜 인코포레이티드 | 상향식 구리 전기도금을 위한 촉진제를 포함하는 전해질 |
| JP2025137155A (ja) * | 2024-03-08 | 2025-09-19 | 三菱マテリアル株式会社 | 酸性電解銅めっき液 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013091820A (ja) * | 2011-10-24 | 2013-05-16 | Kanto Chem Co Inc | 銅層および／または銅合金層を含む金属膜用エッチング液組成物およびそれを用いたエッチング方法 |
| US20150159291A1 (en) * | 2013-12-09 | 2015-06-11 | Alchimer | Copper electrodeposition bath containing an electrochemically inert cation |
| US20150218724A1 (en) * | 2012-09-24 | 2015-08-06 | Alchimer | Electrolyte and process for electroplating copper onto a barrier layer |
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| US6897151B2 (en) * | 2002-11-08 | 2005-05-24 | Wayne State University | Methods of filling a feature on a substrate with copper nanocrystals |
| US6897152B2 (en) | 2003-02-05 | 2005-05-24 | Enthone Inc. | Copper bath composition for electroless and/or electrolytic filling of vias and trenches for integrated circuit fabrication |
| JP4650275B2 (ja) * | 2004-08-10 | 2011-03-16 | 日立金属株式会社 | 銅めっき被膜を表面に有する希土類系永久磁石 |
| FR2890983B1 (fr) | 2005-09-20 | 2007-12-14 | Alchimer Sa | Composition d'electrodeposition destinee au revetement d'une surface d'un substrat par un metal. |
| FR2890984B1 (fr) * | 2005-09-20 | 2009-03-27 | Alchimer Sa | Procede d'electrodeposition destine au revetement d'une surface d'un substrat par un metal. |
| US7579274B2 (en) | 2006-02-21 | 2009-08-25 | Alchimer | Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices |
| CN101275255A (zh) * | 2007-12-20 | 2008-10-01 | 广州市二轻工业科学技术研究所 | 一种碱性无氰镀铜的维护方法 |
| EP2305856A1 (en) * | 2009-09-28 | 2011-04-06 | ATOTECH Deutschland GmbH | Process for applying a metal coating to a non-conductive substrate |
| KR101493358B1 (ko) * | 2013-07-16 | 2015-02-13 | 한국생산기술연구원 | 무전해 구리도금액을 이용한 구리 도금층 형성방법 |
| US9869026B2 (en) * | 2014-07-15 | 2018-01-16 | Rohm And Haas Electronic Materials Llc | Electroless copper plating compositions |
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- 2017-12-26 WO PCT/EP2017/084580 patent/WO2018122216A1/en not_active Ceased
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013091820A (ja) * | 2011-10-24 | 2013-05-16 | Kanto Chem Co Inc | 銅層および／または銅合金層を含む金属膜用エッチング液組成物およびそれを用いたエッチング方法 |
| US20150218724A1 (en) * | 2012-09-24 | 2015-08-06 | Alchimer | Electrolyte and process for electroplating copper onto a barrier layer |
| US20150159291A1 (en) * | 2013-12-09 | 2015-06-11 | Alchimer | Copper electrodeposition bath containing an electrochemically inert cation |
Also Published As
| Publication number | Publication date |
|---|---|
| FR3061601B1 (fr) | 2022-12-30 |
| FR3061601A1 (fr) | 2018-07-06 |
| EP3562975A1 (en) | 2019-11-06 |
| US10883185B2 (en) | 2021-01-05 |
| JP2020503459A (ja) | 2020-01-30 |
| JP7138108B2 (ja) | 2022-09-15 |
| WO2018122216A1 (en) | 2018-07-05 |
| CN110168146A (zh) | 2019-08-23 |
| IL267531A (en) | 2019-08-29 |
| TWI737880B (zh) | 2021-09-01 |
| US20180363158A1 (en) | 2018-12-20 |
| KR20190097129A (ko) | 2019-08-20 |
| TW201833390A (zh) | 2018-09-16 |
| CN110168146B (zh) | 2024-01-09 |
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