CN110168146B - 用于高纵横比图案的铜电沉积溶液和方法 - Google Patents

用于高纵横比图案的铜电沉积溶液和方法 Download PDF

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Publication number
CN110168146B
CN110168146B CN201780082322.7A CN201780082322A CN110168146B CN 110168146 B CN110168146 B CN 110168146B CN 201780082322 A CN201780082322 A CN 201780082322A CN 110168146 B CN110168146 B CN 110168146B
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China
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copper
solution
concentration
complex
electrolyte
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Chinese (zh)
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CN110168146A (zh
Inventor
洛里安娜·勒里基尤克斯
文森特·梅费里克
米卡卢·蒂亚姆
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Alchimer SA
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Alchimer SA
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201780082322.7A 2016-12-29 2017-12-26 用于高纵横比图案的铜电沉积溶液和方法 Active CN110168146B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1663525 2016-12-29
FR1663525A FR3061601B1 (fr) 2016-12-29 2016-12-29 Solution d'electrodeposition de cuivre et procede pour des motifs de facteur de forme eleve
PCT/EP2017/084580 WO2018122216A1 (en) 2016-12-29 2017-12-26 Copper electrodeposition solution and process for high aspect ratio patterns

Publications (2)

Publication Number Publication Date
CN110168146A CN110168146A (zh) 2019-08-23
CN110168146B true CN110168146B (zh) 2024-01-09

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Application Number Title Priority Date Filing Date
CN201780082322.7A Active CN110168146B (zh) 2016-12-29 2017-12-26 用于高纵横比图案的铜电沉积溶液和方法

Country Status (9)

Country Link
US (1) US10883185B2 (enExample)
EP (1) EP3562975A1 (enExample)
JP (1) JP7138108B2 (enExample)
KR (1) KR102562158B1 (enExample)
CN (1) CN110168146B (enExample)
FR (1) FR3061601B1 (enExample)
IL (1) IL267531A (enExample)
TW (1) TWI737880B (enExample)
WO (1) WO2018122216A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110724983B (zh) * 2019-10-12 2022-02-08 天津大学 一种利用脉冲电沉积法制备纳米铜包覆碳化钨核壳结构粉体的方法
CN111041533B (zh) * 2019-12-31 2021-06-29 苏州清飙科技有限公司 电镀纯钴用电镀液及其应用
CN111244547B (zh) * 2020-01-21 2021-09-17 四川虹微技术有限公司 一种含芳香肟类添加剂的电解液及其制备方法和用途
US12070609B2 (en) * 2020-07-30 2024-08-27 Medtronic, Inc. Electrical component and method of forming same
KR20240172193A (ko) 2022-04-05 2024-12-09 맥더미드 엔쏜 인코포레이티드 상향식 구리 전기도금을 위한 촉진제를 포함하는 전해질
JP2025137155A (ja) * 2024-03-08 2025-09-19 三菱マテリアル株式会社 酸性電解銅めっき液

Citations (6)

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CN101275255A (zh) * 2007-12-20 2008-10-01 广州市二轻工业科学技术研究所 一种碱性无氰镀铜的维护方法
CN102549196A (zh) * 2009-09-28 2012-07-04 安美特德国有限公司 用于将金属涂层施加到非电导性基体上的方法
KR20150009400A (ko) * 2013-07-16 2015-01-26 한국생산기술연구원 무전해 구리도금액을 이용한 구리 도금층 형성방법
CN104685107A (zh) * 2012-09-24 2015-06-03 埃其玛公司 电解液和向阻挡层上电镀铜的方法
CN105274591A (zh) * 2014-07-15 2016-01-27 罗门哈斯电子材料有限责任公司 无电极铜电镀组合物
CN105899715A (zh) * 2013-12-09 2016-08-24 阿文尼公司 含有电化学惰性阳离子的铜电沉积浴

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
US6897152B2 (en) 2003-02-05 2005-05-24 Enthone Inc. Copper bath composition for electroless and/or electrolytic filling of vias and trenches for integrated circuit fabrication
JP4650275B2 (ja) * 2004-08-10 2011-03-16 日立金属株式会社 銅めっき被膜を表面に有する希土類系永久磁石
FR2890983B1 (fr) 2005-09-20 2007-12-14 Alchimer Sa Composition d'electrodeposition destinee au revetement d'une surface d'un substrat par un metal.
FR2890984B1 (fr) * 2005-09-20 2009-03-27 Alchimer Sa Procede d'electrodeposition destine au revetement d'une surface d'un substrat par un metal.
US7579274B2 (en) 2006-02-21 2009-08-25 Alchimer Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices
JP2013091820A (ja) * 2011-10-24 2013-05-16 Kanto Chem Co Inc 銅層および／または銅合金層を含む金属膜用エッチング液組成物およびそれを用いたエッチング方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101275255A (zh) * 2007-12-20 2008-10-01 广州市二轻工业科学技术研究所 一种碱性无氰镀铜的维护方法
CN102549196A (zh) * 2009-09-28 2012-07-04 安美特德国有限公司 用于将金属涂层施加到非电导性基体上的方法
CN104685107A (zh) * 2012-09-24 2015-06-03 埃其玛公司 电解液和向阻挡层上电镀铜的方法
KR20150009400A (ko) * 2013-07-16 2015-01-26 한국생산기술연구원 무전해 구리도금액을 이용한 구리 도금층 형성방법
CN105899715A (zh) * 2013-12-09 2016-08-24 阿文尼公司 含有电化学惰性阳离子的铜电沉积浴
CN105274591A (zh) * 2014-07-15 2016-01-27 罗门哈斯电子材料有限责任公司 无电极铜电镀组合物

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
COMPLEX-FORMATION EQUILIBRIA OF SOME ALIPHATIC ALPHA-HYDROXYCARBOXYLIC ACIDS .2. THE STUDY OF COPPER(II) COMPLEXES;PIISPANEN等;《ACTA CHEMICA SCANDINAVICA》;19950101;第49卷;第241-247页 *

Also Published As

Publication number Publication date
FR3061601B1 (fr) 2022-12-30
FR3061601A1 (fr) 2018-07-06
EP3562975A1 (en) 2019-11-06
US10883185B2 (en) 2021-01-05
JP2020503459A (ja) 2020-01-30
JP7138108B2 (ja) 2022-09-15
WO2018122216A1 (en) 2018-07-05
CN110168146A (zh) 2019-08-23
IL267531A (en) 2019-08-29
TWI737880B (zh) 2021-09-01
US20180363158A1 (en) 2018-12-20
KR20190097129A (ko) 2019-08-20
TW201833390A (zh) 2018-09-16
KR102562158B1 (ko) 2023-08-01

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