KR102555339B1 - 프로세스 챔버에서 유동 균일성을 향상시키기 위한 장치 - Google Patents

프로세스 챔버에서 유동 균일성을 향상시키기 위한 장치 Download PDF

Info

Publication number
KR102555339B1
KR102555339B1 KR1020217011121A KR20217011121A KR102555339B1 KR 102555339 B1 KR102555339 B1 KR 102555339B1 KR 1020217011121 A KR1020217011121 A KR 1020217011121A KR 20217011121 A KR20217011121 A KR 20217011121A KR 102555339 B1 KR102555339 B1 KR 102555339B1
Authority
KR
South Korea
Prior art keywords
shroud
opening
process chamber
wall
gas flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217011121A
Other languages
English (en)
Korean (ko)
Other versions
KR20210046819A (ko
Inventor
조틸링감 라말링감
키란쿠마르 넬라산드라 사반다이아
푸홍 장
윌리엄 요한슨
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20210046819A publication Critical patent/KR20210046819A/ko
Application granted granted Critical
Publication of KR102555339B1 publication Critical patent/KR102555339B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L21/67017—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H01L21/67253—
    • H01L21/683—
    • H01L21/68742—
    • H01L21/68785—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020217011121A 2018-09-16 2019-09-16 프로세스 챔버에서 유동 균일성을 향상시키기 위한 장치 Active KR102555339B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862731950P 2018-09-16 2018-09-16
US62/731,950 2018-09-16
US16/569,593 2019-09-12
US16/569,593 US11270898B2 (en) 2018-09-16 2019-09-12 Apparatus for enhancing flow uniformity in a process chamber
PCT/US2019/051304 WO2020056412A1 (en) 2018-09-16 2019-09-16 Apparatus for enhancing flow uniformity in a process chamber

Publications (2)

Publication Number Publication Date
KR20210046819A KR20210046819A (ko) 2021-04-28
KR102555339B1 true KR102555339B1 (ko) 2023-07-12

Family

ID=69773137

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217011121A Active KR102555339B1 (ko) 2018-09-16 2019-09-16 프로세스 챔버에서 유동 균일성을 향상시키기 위한 장치

Country Status (6)

Country Link
US (1) US11270898B2 (https=)
JP (1) JP7480127B2 (https=)
KR (1) KR102555339B1 (https=)
CN (1) CN112805815B (https=)
TW (1) TWI723540B (https=)
WO (1) WO2020056412A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200286757A1 (en) * 2019-03-08 2020-09-10 Dsgi Technologies, Inc. Apparatus for annealing semiconductor integrated circuit wafers
KR102783596B1 (ko) 2024-07-15 2025-03-19 주식회사 캐이트워크 조감도에서의 기초 객체 정보 생성 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080178801A1 (en) * 2007-01-29 2008-07-31 Applied Materials, Inc. Process kit for substrate processing chamber
US20140272211A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Apparatus and methods for reducing particles in semiconductor process chambers

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6537011B1 (en) * 2000-03-10 2003-03-25 Applied Materials, Inc. Method and apparatus for transferring and supporting a substrate
US7011039B1 (en) 2000-07-07 2006-03-14 Applied Materials, Inc. Multi-purpose processing chamber with removable chamber liner
KR20040033831A (ko) * 2002-10-16 2004-04-28 삼성전자주식회사 반도체 소자 제조 장치
US8118044B2 (en) 2004-03-12 2012-02-21 Applied Materials, Inc. Single workpiece processing chamber with tilting load/unload upper rim
US8236105B2 (en) 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber
US20080110567A1 (en) * 2006-11-15 2008-05-15 Miller Matthew L Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
KR100906392B1 (ko) * 2007-12-13 2009-07-07 (주)트리플코어스코리아 반도체 챔버 라이너
US20090188624A1 (en) 2008-01-25 2009-07-30 Applied Materials, Inc. Method and apparatus for enhancing flow uniformity in a process chamber
US7699935B2 (en) * 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
WO2010123877A2 (en) * 2009-04-21 2010-10-28 Applied Materials, Inc. Cvd apparatus for improved film thickness non-uniformity and particle performance
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US9679751B2 (en) * 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
US20140083360A1 (en) * 2012-09-26 2014-03-27 Applied Materials, Inc. Process chamber having more uniform gas flow
WO2014052388A1 (en) * 2012-09-26 2014-04-03 Applied Materials, Inc. An apparatus and method for purging gaseous compounds
KR20140140418A (ko) * 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기층 에칭 장치 및 유기층 에칭 방법
US10010912B2 (en) * 2013-06-14 2018-07-03 Applied Materials, Inc. Particle reduction via throttle gate valve purge
JP6581602B2 (ja) 2014-02-06 2019-09-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインｄｐｓチャンバハードウェア設計
CN104947039B (zh) * 2014-03-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 隔热挡板及反应腔室

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080178801A1 (en) * 2007-01-29 2008-07-31 Applied Materials, Inc. Process kit for substrate processing chamber
US20140272211A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Apparatus and methods for reducing particles in semiconductor process chambers

Also Published As

Publication number Publication date
WO2020056412A1 (en) 2020-03-19
CN112805815B (zh) 2024-11-22
TWI723540B (zh) 2021-04-01
JP7480127B2 (ja) 2024-05-09
CN112805815A (zh) 2021-05-14
TW202012693A (zh) 2020-04-01
US11270898B2 (en) 2022-03-08
JP2022500876A (ja) 2022-01-04
KR20210046819A (ko) 2021-04-28
US20200090957A1 (en) 2020-03-19

Similar Documents

Publication Publication Date Title
TWI494454B (zh) 用於射頻物理氣相沉積之製程套組
US8840725B2 (en) Chamber with uniform flow and plasma distribution
CN102576664A (zh) 用于rf物理气相沉积的处理套件
CN116670811A (zh) 用于经由边缘夹持进行薄型基板操纵的沉积环
CN116711060A (zh) 经由边缘夹持的薄型基板操纵
KR102555339B1 (ko) 프로세스 챔버에서 유동 균일성을 향상시키기 위한 장치
TW202123304A (zh) 用於處理腔室的高導通下部護罩
US12183560B2 (en) Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process
US12368028B2 (en) Apparatus for improved high pressure plasma processing
TWI773740B (zh) 濺鍍裝置
TWI878239B (zh) 具有減少電弧的物理氣相沉積(pvd)腔室
TWI868204B (zh) 用於處理腔室的處理套件
US20250293008A1 (en) External Cooling Assembly for Substrate Support
KR102959528B1 (ko) 에지 클램핑을 통한 얇은 기판 처리

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17 Change to representative recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R17-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000