JP7480127B2 - プロセスチャンバ内の流れの均一性を高めるための装置 - Google Patents
プロセスチャンバ内の流れの均一性を高めるための装置 Download PDFInfo
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- JP7480127B2 JP7480127B2 JP2021514595A JP2021514595A JP7480127B2 JP 7480127 B2 JP7480127 B2 JP 7480127B2 JP 2021514595 A JP2021514595 A JP 2021514595A JP 2021514595 A JP2021514595 A JP 2021514595A JP 7480127 B2 JP7480127 B2 JP 7480127B2
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- 238000000034 method Methods 0.000 title claims description 97
- 230000002708 enhancing effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 42
- 238000005086 pumping Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 37
- 239000000463 material Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (13)
- プロセスチャンバ内のガス流を制御するためのシュラウドであって、
上端および下端を有する閉鎖壁本体であり、前記下端において前記シュラウドの第1の開口部および前記上端において前記シュラウドの第2の開口部を画定し、前記第2の開口部が前記第1の開口部からオフセットされている、閉鎖壁本体と、
前記第1の開口部の上方の位置で前記閉鎖壁本体の前記上端の一部の上に配置されて、前記閉鎖壁本体の前記上端の残りの部分とともに前記第2の開口部を画定する頂部壁と、を備え、前記シュラウドが、ガス流を前記第2の開口部から前記第1の開口部に迂回させるように構成されており、
前記閉鎖壁本体が、
環状形状を有し、前記シュラウドの前記第1の開口部を画定する第1の本体と、
前記第1の本体の頂部に配置され、前記第1の開口部を覆う第2の本体と、
前記第1の本体または前記第2の本体のうちの少なくとも1つに結合された第3の本体であって、前記第3の本体および前記第2の本体が前記シュラウドの前記第2の開口部を画定する、第3の本体と、
を備える、シュラウド。 - 前記第2の本体が、前記頂部壁を画定する平面と、前記平面の両側から延在する側壁と、を含む、請求項1に記載のシュラウド。
- 前記第2の本体が、前記平面の反対側の端部において前記第2の本体の前記側壁から延在するタブを含む、請求項2に記載のシュラウド。
- 前記第3の本体が、内面および外面を有する壁と、前記壁の前記外面から離れるように延在するリップと、を含む、請求項1に記載のシュラウド。
- 前記第1の本体が、第1の部分および第2の部分を含み、前記第2の部分が前記第1の部分から隆起している、請求項1に記載のシュラウド。
- 前記第1の本体の前記第2の部分が前記第2の本体に結合されている、請求項5に記載のシュラウド。
- 前記平面が、第1の湾曲した縁部と第2の湾曲した縁部とを接続する一対の線形縁部によって画定されている、請求項2又は3のいずれか1項に記載のシュラウド。
- 前記第1の開口部が実質的に円形形状を有する、請求項1~6のいずれか1項に記載のシュラウド。
- プロセスチャンバであって、
基板を支持する基板支持体と、
前記基板支持体の周りに配置されたプロセスシールドと、
前記プロセスチャンバからの非対称ポンピングを提供する位置で前記プロセスチャンバの下方部分に配置されたポンプポートと、
前記基板支持体と前記ポンプポートとの間に配置されたシュラウドであり、下端に第1の開口部および上端に第2の開口部を含み、前記第2の開口部が前記第1の開口部からオフセットされているシュラウドと、を備え、前記シュラウドが、前記シュラウドを通るガス流を、前記第2の開口部および前記第1の開口部を通って前記ポンプポートに向けて導くように構成されており、
前記シュラウドが、第1の本体、第2の本体、および第3の本体を含み、前記第3の本体が前記プロセスチャンバの底部壁に固定されている、プロセスチャンバ。 - 前記シュラウド内に配置されたフープリフトをさらに備える、請求項9に記載のプロセスチャンバ。
- 前記フープリフトがリフトピンを含む、請求項10に記載のプロセスチャンバ。
- 前記プロセスシールドが上方部分および下方部分を含み、前記下方部分が複数の開口部を有する、請求項9~11のいずれか1項に記載のプロセスチャンバ。
- 前記複数の開口部が楕円形状を有する、請求項12に記載のプロセスチャンバ。
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Application Number | Priority Date | Filing Date | Title |
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US201862731950P | 2018-09-16 | 2018-09-16 | |
US62/731,950 | 2018-09-16 | ||
US16/569,593 | 2019-09-12 | ||
US16/569,593 US11270898B2 (en) | 2018-09-16 | 2019-09-12 | Apparatus for enhancing flow uniformity in a process chamber |
PCT/US2019/051304 WO2020056412A1 (en) | 2018-09-16 | 2019-09-16 | Apparatus for enhancing flow uniformity in a process chamber |
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JP2022500876A JP2022500876A (ja) | 2022-01-04 |
JPWO2020056412A5 JPWO2020056412A5 (ja) | 2022-09-27 |
JP7480127B2 true JP7480127B2 (ja) | 2024-05-09 |
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US (1) | US11270898B2 (ja) |
JP (1) | JP7480127B2 (ja) |
KR (1) | KR102555339B1 (ja) |
CN (1) | CN112805815A (ja) |
TW (1) | TWI723540B (ja) |
WO (1) | WO2020056412A1 (ja) |
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US20200286757A1 (en) * | 2019-03-08 | 2020-09-10 | Dsgi Technologies, Inc. | Apparatus for annealing semiconductor integrated circuit wafers |
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- 2019-09-12 US US16/569,593 patent/US11270898B2/en active Active
- 2019-09-16 WO PCT/US2019/051304 patent/WO2020056412A1/en active Application Filing
- 2019-09-16 JP JP2021514595A patent/JP7480127B2/ja active Active
- 2019-09-16 TW TW108133207A patent/TWI723540B/zh active
- 2019-09-16 KR KR1020217011121A patent/KR102555339B1/ko active IP Right Grant
- 2019-09-16 CN CN201980065400.1A patent/CN112805815A/zh active Pending
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US20140272211A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Apparatus and methods for reducing particles in semiconductor process chambers |
JP2017506437A (ja) | 2014-02-06 | 2017-03-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインdpsチャンバハードウェア設計 |
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JP2022500876A (ja) | 2022-01-04 |
CN112805815A (zh) | 2021-05-14 |
TW202012693A (zh) | 2020-04-01 |
WO2020056412A1 (en) | 2020-03-19 |
TWI723540B (zh) | 2021-04-01 |
US11270898B2 (en) | 2022-03-08 |
KR20210046819A (ko) | 2021-04-28 |
KR102555339B1 (ko) | 2023-07-12 |
US20200090957A1 (en) | 2020-03-19 |
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