CN112805815B - 用于增强处理腔室中流动均匀性的装置 - Google Patents

用于增强处理腔室中流动均匀性的装置 Download PDF

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Publication number
CN112805815B
CN112805815B CN201980065400.1A CN201980065400A CN112805815B CN 112805815 B CN112805815 B CN 112805815B CN 201980065400 A CN201980065400 A CN 201980065400A CN 112805815 B CN112805815 B CN 112805815B
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shutter
opening
disposed
wall
substrate
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Chinese (zh)
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CN112805815A (zh
Inventor
乔斯林甘·罗摩林甘
克兰库玛尔·纽拉桑德拉·萨凡迪亚
张富宏
威廉·约翰森
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201980065400.1A 2018-09-16 2019-09-16 用于增强处理腔室中流动均匀性的装置 Active CN112805815B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862731950P 2018-09-16 2018-09-16
US62/731,950 2018-09-16
US16/569,593 2019-09-12
US16/569,593 US11270898B2 (en) 2018-09-16 2019-09-12 Apparatus for enhancing flow uniformity in a process chamber
PCT/US2019/051304 WO2020056412A1 (en) 2018-09-16 2019-09-16 Apparatus for enhancing flow uniformity in a process chamber

Publications (2)

Publication Number Publication Date
CN112805815A CN112805815A (zh) 2021-05-14
CN112805815B true CN112805815B (zh) 2024-11-22

Family

ID=69773137

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980065400.1A Active CN112805815B (zh) 2018-09-16 2019-09-16 用于增强处理腔室中流动均匀性的装置

Country Status (6)

Country Link
US (1) US11270898B2 (https=)
JP (1) JP7480127B2 (https=)
KR (1) KR102555339B1 (https=)
CN (1) CN112805815B (https=)
TW (1) TWI723540B (https=)
WO (1) WO2020056412A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200286757A1 (en) * 2019-03-08 2020-09-10 Dsgi Technologies, Inc. Apparatus for annealing semiconductor integrated circuit wafers
KR102783596B1 (ko) 2024-07-15 2025-03-19 주식회사 캐이트워크 조감도에서의 기초 객체 정보 생성 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6537011B1 (en) * 2000-03-10 2003-03-25 Applied Materials, Inc. Method and apparatus for transferring and supporting a substrate
US7011039B1 (en) 2000-07-07 2006-03-14 Applied Materials, Inc. Multi-purpose processing chamber with removable chamber liner
KR20040033831A (ko) * 2002-10-16 2004-04-28 삼성전자주식회사 반도체 소자 제조 장치
US8118044B2 (en) 2004-03-12 2012-02-21 Applied Materials, Inc. Single workpiece processing chamber with tilting load/unload upper rim
US8236105B2 (en) 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber
US20080110567A1 (en) * 2006-11-15 2008-05-15 Miller Matthew L Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
KR100906392B1 (ko) * 2007-12-13 2009-07-07 (주)트리플코어스코리아 반도체 챔버 라이너
US20090188624A1 (en) 2008-01-25 2009-07-30 Applied Materials, Inc. Method and apparatus for enhancing flow uniformity in a process chamber
US7699935B2 (en) * 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
WO2010123877A2 (en) * 2009-04-21 2010-10-28 Applied Materials, Inc. Cvd apparatus for improved film thickness non-uniformity and particle performance
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US9679751B2 (en) * 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
US20140083360A1 (en) * 2012-09-26 2014-03-27 Applied Materials, Inc. Process chamber having more uniform gas flow
WO2014052388A1 (en) * 2012-09-26 2014-04-03 Applied Materials, Inc. An apparatus and method for purging gaseous compounds
US9761416B2 (en) 2013-03-15 2017-09-12 Applied Materials, Inc. Apparatus and methods for reducing particles in semiconductor process chambers
KR20140140418A (ko) * 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기층 에칭 장치 및 유기층 에칭 방법
US10010912B2 (en) * 2013-06-14 2018-07-03 Applied Materials, Inc. Particle reduction via throttle gate valve purge
JP6581602B2 (ja) 2014-02-06 2019-09-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインｄｐｓチャンバハードウェア設計
CN104947039B (zh) * 2014-03-24 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 隔热挡板及反应腔室

Also Published As

Publication number Publication date
WO2020056412A1 (en) 2020-03-19
TWI723540B (zh) 2021-04-01
JP7480127B2 (ja) 2024-05-09
CN112805815A (zh) 2021-05-14
TW202012693A (zh) 2020-04-01
US11270898B2 (en) 2022-03-08
JP2022500876A (ja) 2022-01-04
KR102555339B1 (ko) 2023-07-12
KR20210046819A (ko) 2021-04-28
US20200090957A1 (en) 2020-03-19

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