KR102554839B1 - 그래핀 확산 장벽 - Google Patents

그래핀 확산 장벽 Download PDF

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KR102554839B1
KR102554839B1 KR1020217006973A KR20217006973A KR102554839B1 KR 102554839 B1 KR102554839 B1 KR 102554839B1 KR 1020217006973 A KR1020217006973 A KR 1020217006973A KR 20217006973 A KR20217006973 A KR 20217006973A KR 102554839 B1 KR102554839 B1 KR 102554839B1
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South Korea
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electronic device
barrier layer
layer
forming
graphene barrier
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KR20210031763A (ko
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용 우
스리니바스 갠디코타
아비지트 바수 말릭
스리니바스 디. 네마니
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/02304—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H01L21/02178—
    • H01L21/0228—
    • H01L21/02592—
    • H01L21/32055—
    • H01L21/76841—
    • H01L29/1606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
KR1020217006973A 2018-08-11 2019-08-09 그래핀 확산 장벽 Active KR102554839B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237022970A KR102637671B1 (ko) 2018-08-11 2019-08-09 그래핀 확산 장벽

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862717824P 2018-08-11 2018-08-11
US62/717,824 2018-08-11
PCT/US2019/045872 WO2020036819A1 (en) 2018-08-11 2019-08-09 Graphene diffusion barrier

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Publications (2)

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KR20210031763A KR20210031763A (ko) 2021-03-22
KR102554839B1 true KR102554839B1 (ko) 2023-07-11

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US (2) US10916505B2 (enExample)
JP (1) JP7611814B2 (enExample)
KR (2) KR102554839B1 (enExample)
CN (2) CN112514031A (enExample)
SG (1) SG11202100359SA (enExample)
TW (2) TWI758629B (enExample)
WO (1) WO2020036819A1 (enExample)

Cited By (1)

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KR102945432B1 (ko) * 2024-11-28 2026-03-31 세종대학교산학협력단 확산 방지층을 가진 산화갈륨 기반 반도체 장치 및 그 제조 방법

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US10916505B2 (en) * 2018-08-11 2021-02-09 Applied Materials, Inc. Graphene diffusion barrier
US11251129B2 (en) * 2020-03-27 2022-02-15 Intel Corporation Deposition of graphene on a dielectric surface for next generation interconnects
US12300497B2 (en) 2021-02-11 2025-05-13 Applied Materials, Inc. Method and apparatus of low temperature plasma enhanced chemical vapor deposition of graphene
JP7692775B2 (ja) * 2021-09-16 2025-06-16 東京エレクトロン株式会社 基板処理方法、基板処理装置および半導体構造
KR20230055281A (ko) 2021-10-18 2023-04-25 삼성전자주식회사 이차원 물질을 포함하는 박막 구조체 및 전자 소자
KR20230071632A (ko) 2021-11-16 2023-05-23 삼성전자주식회사 메모리 셀 스트링을 포함하는 수직형 비휘발성 메모리 장치
WO2023121714A1 (en) * 2021-12-22 2023-06-29 General Graphene Corporation Novel systems and methods for high yield and high throughput production of graphene

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KR20210031763A (ko) 2021-03-22
US20200051920A1 (en) 2020-02-13
TWI807639B (zh) 2023-07-01
SG11202100359SA (en) 2021-02-25
TWI758629B (zh) 2022-03-21
US20210167021A1 (en) 2021-06-03
CN112514031A (zh) 2021-03-16
WO2020036819A1 (en) 2020-02-20
TW202223138A (zh) 2022-06-16
KR102637671B1 (ko) 2024-02-15
KR20230106752A (ko) 2023-07-13
TW202009135A (zh) 2020-03-01
CN121096851A (zh) 2025-12-09
US10916505B2 (en) 2021-02-09
JP2021534572A (ja) 2021-12-09
US11621226B2 (en) 2023-04-04
JP7611814B2 (ja) 2025-01-10

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