KR102538550B1 - 운반 링 - Google Patents

운반 링 Download PDF

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Publication number
KR102538550B1
KR102538550B1 KR1020197023693A KR20197023693A KR102538550B1 KR 102538550 B1 KR102538550 B1 KR 102538550B1 KR 1020197023693 A KR1020197023693 A KR 1020197023693A KR 20197023693 A KR20197023693 A KR 20197023693A KR 102538550 B1 KR102538550 B1 KR 102538550B1
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KR
South Korea
Prior art keywords
section
ring
shaped body
heat transfer
thermal conductivity
Prior art date
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KR1020197023693A
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English (en)
Korean (ko)
Other versions
KR20190111999A (ko
Inventor
빌헬름 요세프 토마스 크뤼켄
마틴 아이켈캄프
Original Assignee
아익스트론 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from DE102017101648.1A external-priority patent/DE102017101648A1/de
Application filed by 아익스트론 에스이 filed Critical 아익스트론 에스이
Publication of KR20190111999A publication Critical patent/KR20190111999A/ko
Application granted granted Critical
Publication of KR102538550B1 publication Critical patent/KR102538550B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020197023693A 2017-01-27 2018-01-25 운반 링 KR102538550B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102017101648.1A DE102017101648A1 (de) 2017-01-27 2017-01-27 Transportring
DE102017101648.1 2017-01-27
DE102017115416 2017-07-10
DE102017115416.7 2017-07-10
PCT/EP2018/051827 WO2018138197A1 (de) 2017-01-27 2018-01-25 Transportring

Publications (2)

Publication Number Publication Date
KR20190111999A KR20190111999A (ko) 2019-10-02
KR102538550B1 true KR102538550B1 (ko) 2023-05-30

Family

ID=61148198

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197023693A KR102538550B1 (ko) 2017-01-27 2018-01-25 운반 링

Country Status (7)

Country Link
US (1) US20190390336A1 (de)
EP (1) EP3574127A1 (de)
JP (1) JP7107949B2 (de)
KR (1) KR102538550B1 (de)
CN (1) CN110536976B (de)
TW (1) TWI749159B (de)
WO (1) WO2018138197A1 (de)

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* Cited by examiner, † Cited by third party
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DE102018113400A1 (de) * 2018-06-06 2019-12-12 Aixtron Se CVD Reaktor mit Tragring zum Substrathandhaben
DE102019105913A1 (de) 2019-03-08 2020-09-10 Aixtron Se Suszeptoranordnung eines CVD-Reaktors
DE102020117645A1 (de) * 2020-07-03 2022-01-05 Aixtron Se Transportring für einen CVD-Reaktor
EP4306286A1 (de) 2021-03-11 2024-01-17 Dic Corporation Entfärbungsverfahren, entfärbungsmittel zur verwendung in diesem entfärbungsverfahren und kunststoffsubstratrückgewinnungsverfahren damit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130291798A1 (en) 2011-01-14 2013-11-07 Wonik Ip Co., Ltd. Thin film deposition apparatus and substrate treatment system including the same

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US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
TW484187B (en) * 2000-02-14 2002-04-21 Tokyo Electron Ltd Apparatus and method for plasma treatment
WO2003079404A2 (en) * 2002-03-12 2003-09-25 Tokyo Electron Limited An improved substrate holder for plasma processing
JP4216541B2 (ja) * 2002-06-13 2009-01-28 日鉱金属株式会社 気相成長装置
DE102004058521A1 (de) 2004-12-04 2006-06-14 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von dicken Gallium-Nitrit-Schichten auf einem Saphirsubstrat und zugehörigen Substrathalter
TWI354320B (en) * 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
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DE102010000554A1 (de) * 2009-03-16 2010-09-30 Aixtron Ag MOCVD-Reaktor mit einer örtlich verschieden an ein Wärmeableitorgan angekoppelten Deckenplatte
JP5430192B2 (ja) * 2009-03-19 2014-02-26 東京エレクトロン株式会社 温度調節装置、温度調節方法、基板処理装置及び対向電極
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DE102009044276A1 (de) * 2009-10-16 2011-05-05 Aixtron Ag CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter
JP2011151263A (ja) * 2010-01-22 2011-08-04 Tokyo Electron Ltd エッチング方法、エッチング装置及びリング部材
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置
JP5732941B2 (ja) * 2011-03-16 2015-06-10 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
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JP6442296B2 (ja) * 2014-06-24 2018-12-19 東京エレクトロン株式会社 載置台及びプラズマ処理装置
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Also Published As

Publication number Publication date
JP7107949B2 (ja) 2022-07-27
US20190390336A1 (en) 2019-12-26
EP3574127A1 (de) 2019-12-04
TW201840898A (zh) 2018-11-16
CN110536976B (zh) 2022-03-15
JP2020506290A (ja) 2020-02-27
WO2018138197A1 (de) 2018-08-02
TWI749159B (zh) 2021-12-11
KR20190111999A (ko) 2019-10-02
CN110536976A (zh) 2019-12-03

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