KR102514138B1 - 고체 촬상 소자 및 전자 기기 - Google Patents

고체 촬상 소자 및 전자 기기 Download PDF

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Publication number
KR102514138B1
KR102514138B1 KR1020197029910A KR20197029910A KR102514138B1 KR 102514138 B1 KR102514138 B1 KR 102514138B1 KR 1020197029910 A KR1020197029910 A KR 1020197029910A KR 20197029910 A KR20197029910 A KR 20197029910A KR 102514138 B1 KR102514138 B1 KR 102514138B1
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South Korea
Prior art keywords
vertical gate
semiconductor substrate
gate electrodes
depth direction
charge
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KR1020197029910A
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English (en)
Korean (ko)
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KR20200002815A (ko
Inventor
하루유키 나카가와
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Priority to KR1020237009585A priority Critical patent/KR102625901B1/ko
Publication of KR20200002815A publication Critical patent/KR20200002815A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020197029910A 2017-04-28 2018-02-13 고체 촬상 소자 및 전자 기기 KR102514138B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237009585A KR102625901B1 (ko) 2017-04-28 2018-02-13 광검출 장치 및 전자 기기

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017090536A JP2018190797A (ja) 2017-04-28 2017-04-28 固体撮像素子および電子機器
JPJP-P-2017-090536 2017-04-28
PCT/JP2018/004875 WO2018198486A1 (fr) 2017-04-28 2018-02-13 Élément d'imagerie à semi-conducteur et appareil électronique

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020237009585A Division KR102625901B1 (ko) 2017-04-28 2018-02-13 광검출 장치 및 전자 기기

Publications (2)

Publication Number Publication Date
KR20200002815A KR20200002815A (ko) 2020-01-08
KR102514138B1 true KR102514138B1 (ko) 2023-03-27

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020237042578A KR20230170989A (ko) 2017-04-28 2018-02-13 광검출 장치 및 전자 기기
KR1020197029910A KR102514138B1 (ko) 2017-04-28 2018-02-13 고체 촬상 소자 및 전자 기기
KR1020237009585A KR102625901B1 (ko) 2017-04-28 2018-02-13 광검출 장치 및 전자 기기

Family Applications Before (1)

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KR1020237042578A KR20230170989A (ko) 2017-04-28 2018-02-13 광검출 장치 및 전자 기기

Family Applications After (1)

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KR1020237009585A KR102625901B1 (ko) 2017-04-28 2018-02-13 광검출 장치 및 전자 기기

Country Status (6)

Country Link
US (2) US11587963B2 (fr)
EP (2) EP3951879A1 (fr)
JP (1) JP2018190797A (fr)
KR (3) KR20230170989A (fr)
CN (1) CN110546764A (fr)
WO (1) WO2018198486A1 (fr)

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WO2020026856A1 (fr) * 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie et appareil électronique
WO2021009978A1 (fr) * 2019-07-12 2021-01-21 ソニーセミコンダクタソリューションズ株式会社 Dispositif de détection optique
WO2021009979A1 (fr) * 2019-07-12 2021-01-21 ソニーセミコンダクタソリューションズ株式会社 Dispositif de détection optique
TW202129936A (zh) * 2019-07-19 2021-08-01 日商索尼半導體解決方案公司 攝像裝置
JP2021019171A (ja) 2019-07-24 2021-02-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JP7403993B2 (ja) * 2019-08-20 2023-12-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
CN111146224A (zh) * 2019-12-23 2020-05-12 上海华力微电子有限公司 图像传感器及电荷转移方法
EP4084090A4 (fr) * 2019-12-25 2023-01-18 Sony Semiconductor Solutions Corporation Élément de réception de lumière et dispositif de réception de lumière
JP2021141262A (ja) * 2020-03-06 2021-09-16 Ｇｐｉｘｅｌ Ｊａｐａｎ株式会社 固体撮像装置用画素
CN112259569A (zh) * 2020-10-30 2021-01-22 上海华力微电子有限公司 图像传感器及图像传感器像素结构的形成方法
JP2022086611A (ja) * 2020-11-30 2022-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法
US11948965B2 (en) 2021-04-01 2024-04-02 Omnivision Technologies, Inc. Uneven-trench pixel cell and fabrication method
WO2022259855A1 (fr) * 2021-06-11 2022-12-15 ソニーセミコンダクタソリューションズ株式会社 Dispositif à semi-conducteur, son procédé de fabrication et appareil électronique
CN117546294A (zh) 2021-08-13 2024-02-09 索尼半导体解决方案公司 成像装置和电子设备
KR20240038972A (ko) 2021-08-13 2024-03-26 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 전자 기기
JP2023157511A (ja) * 2022-04-15 2023-10-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Citations (6)

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US20120199882A1 (en) * 2011-02-07 2012-08-09 Shin Jong-Cheol Image Sensors Including A Gate Electrode Surrounding A Floating Diffusion Region
JP2013038118A (ja) * 2011-08-04 2013-02-21 Sony Corp 固体撮像素子および電子機器
US20160020237A1 (en) * 2013-03-14 2016-01-21 Sony Corporation Solid state image sensor, manufacturing method thereof, and electronic device
JP2016152377A (ja) * 2015-02-19 2016-08-22 株式会社リコー 半導体デバイス及びその製造方法並びに撮像装置
JP2016162788A (ja) * 2015-02-27 2016-09-05 ソニー株式会社 撮像素子、撮像装置、並びに、製造装置および方法
WO2017057278A1 (fr) * 2015-09-30 2017-04-06 株式会社ニコン Élément d'imagerie et dispositif d'imagerie

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JP5361110B2 (ja) * 2004-10-20 2013-12-04 三星電子株式会社 非平面トランジスタを有する固体イメージセンサ素子及びその製造方法
KR100630704B1 (ko) * 2004-10-20 2006-10-02 삼성전자주식회사 비평면 구조의 트랜지스터를 구비한 ｃｍｏｓ 이미지 센서및 그 제조 방법
JP5401928B2 (ja) 2008-11-06 2014-01-29 ソニー株式会社 固体撮像装置、及び電子機器
JP2013026264A (ja) * 2011-07-15 2013-02-04 Sony Corp 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
KR101867337B1 (ko) * 2012-01-30 2018-06-15 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR101968197B1 (ko) * 2012-05-18 2019-04-12 삼성전자주식회사 이미지 센서 및 이의 형성 방법
KR20140111492A (ko) * 2013-03-11 2014-09-19 삼성전자주식회사 반도체 장치
JP2015053411A (ja) 2013-09-09 2015-03-19 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
FR3019379A1 (fr) * 2014-03-31 2015-10-02 St Microelectronics Crolles 2 Transistor a grille verticale et structure de pixel comprenant un tel transistor
US9659987B2 (en) * 2014-09-19 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Approach for reducing pixel pitch using vertical transfer gates and implant isolation regions
JP2016136584A (ja) 2015-01-23 2016-07-28 株式会社東芝 固体撮像装置および固体撮像装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120199882A1 (en) * 2011-02-07 2012-08-09 Shin Jong-Cheol Image Sensors Including A Gate Electrode Surrounding A Floating Diffusion Region
JP2013038118A (ja) * 2011-08-04 2013-02-21 Sony Corp 固体撮像素子および電子機器
US20160020237A1 (en) * 2013-03-14 2016-01-21 Sony Corporation Solid state image sensor, manufacturing method thereof, and electronic device
JP2016152377A (ja) * 2015-02-19 2016-08-22 株式会社リコー 半導体デバイス及びその製造方法並びに撮像装置
JP2016162788A (ja) * 2015-02-27 2016-09-05 ソニー株式会社 撮像素子、撮像装置、並びに、製造装置および方法
WO2017057278A1 (fr) * 2015-09-30 2017-04-06 株式会社ニコン Élément d'imagerie et dispositif d'imagerie

Also Published As

Publication number Publication date
EP3618116A4 (fr) 2020-04-15
WO2018198486A1 (fr) 2018-11-01
KR20230043243A (ko) 2023-03-30
KR102625901B1 (ko) 2024-01-18
EP3618116A1 (fr) 2020-03-04
EP3951879A1 (fr) 2022-02-09
US11587963B2 (en) 2023-02-21
KR20230170989A (ko) 2023-12-19
KR20200002815A (ko) 2020-01-08
CN110546764A (zh) 2019-12-06
EP3618116B1 (fr) 2021-11-10
JP2018190797A (ja) 2018-11-29
US20230154952A1 (en) 2023-05-18
US20200135781A1 (en) 2020-04-30

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