KR102513718B1 - 공정 변동에 대한 계측 민감도를 정량화하기 위한 스케일링 메트릭 - Google Patents

공정 변동에 대한 계측 민감도를 정량화하기 위한 스케일링 메트릭 Download PDF

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KR102513718B1
KR102513718B1 KR1020217027493A KR20217027493A KR102513718B1 KR 102513718 B1 KR102513718 B1 KR 102513718B1 KR 1020217027493 A KR1020217027493 A KR 1020217027493A KR 20217027493 A KR20217027493 A KR 20217027493A KR 102513718 B1 KR102513718 B1 KR 102513718B1
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overlay
measurement
targets
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metrology tool
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KR20210110897A (ko
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탈 마르시아노
노아 아르몬
데이나 클라인
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Computational Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Pure & Applied Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Analysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Pathology (AREA)
  • Evolutionary Biology (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Operations Research (AREA)
  • Probability & Statistics with Applications (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Algebra (AREA)
  • Chemical & Material Sciences (AREA)
  • Databases & Information Systems (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020217027493A 2019-01-28 2020-01-21 공정 변동에 대한 계측 민감도를 정량화하기 위한 스케일링 메트릭 Active KR102513718B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962797557P 2019-01-28 2019-01-28
US62/797,557 2019-01-28
US16/741,574 2020-01-13
US16/741,574 US11333982B2 (en) 2019-01-28 2020-01-13 Scaling metric for quantifying metrology sensitivity to process variation
PCT/US2020/014308 WO2020159737A1 (en) 2019-01-28 2020-01-21 Scaling metric for quantifying metrology sensitivity to process variation

Publications (2)

Publication Number Publication Date
KR20210110897A KR20210110897A (ko) 2021-09-09
KR102513718B1 true KR102513718B1 (ko) 2023-03-23

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US (1) US11333982B2 (https=)
JP (1) JP7303887B2 (https=)
KR (1) KR102513718B1 (https=)
CN (1) CN113330550B (https=)
TW (1) TWI800708B (https=)
WO (1) WO2020159737A1 (https=)

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KR102921020B1 (ko) * 2019-11-28 2026-01-30 케이엘에이 코포레이션 계측 랜드스케이프에 기초한 계측 최적화를 위한 시스템 및 방법
US12406891B2 (en) * 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
EP4338009A4 (en) * 2021-10-21 2025-06-04 KLA Corporation INDUCED SHIFTS FOR IMPROVED OVERHEATING ERROR METROLOGY
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
US12455509B2 (en) * 2022-02-24 2025-10-28 Nanya Technology Corporation Semiconductor structure and system for manufacturing the same
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
KR102662778B1 (ko) * 2023-08-16 2024-04-30 (주)오로스 테크놀로지 오버레이 계측 장치의 타겟 선정 방법 및 오버레이 계측 장치의 타겟 선정 시스템
US12423803B2 (en) * 2024-01-23 2025-09-23 KLA Con Predicting tool induced shift using Moiré overlay targets

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US20170160074A1 (en) 2015-12-04 2017-06-08 Asml Netherlands B.V. Statistical hierarchical reconstruction from metrology data
US20180088470A1 (en) * 2016-09-27 2018-03-29 Asml Netherlands B.V. Metrology recipe selection

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US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP2006216796A (ja) * 2005-02-03 2006-08-17 Nikon Corp 基準パターン情報の作成方法、位置計測方法、位置計測装置、露光方法、及び露光装置
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US20150185625A1 (en) 2013-12-30 2015-07-02 Asml Netherlands B.V. Method and apparatus for design of a metrology target
US20170160074A1 (en) 2015-12-04 2017-06-08 Asml Netherlands B.V. Statistical hierarchical reconstruction from metrology data
US20180088470A1 (en) * 2016-09-27 2018-03-29 Asml Netherlands B.V. Metrology recipe selection

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Publication number Publication date
CN113330550A (zh) 2021-08-31
JP7303887B2 (ja) 2023-07-05
US20200241428A1 (en) 2020-07-30
KR20210110897A (ko) 2021-09-09
WO2020159737A1 (en) 2020-08-06
CN113330550B (zh) 2024-08-06
JP2022523692A (ja) 2022-04-26
TW202043930A (zh) 2020-12-01
TWI800708B (zh) 2023-05-01
US11333982B2 (en) 2022-05-17

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