CN113330550B - 叠对计量系统和方法 - Google Patents

叠对计量系统和方法 Download PDF

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Publication number
CN113330550B
CN113330550B CN202080009804.1A CN202080009804A CN113330550B CN 113330550 B CN113330550 B CN 113330550B CN 202080009804 A CN202080009804 A CN 202080009804A CN 113330550 B CN113330550 B CN 113330550B
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China
Prior art keywords
overlay
metrology tool
target
measurements
targets
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Chinese (zh)
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CN113330550A (zh
Inventor
T·马西安诺
N·阿蒙
D·克莱因
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Computational Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Pure & Applied Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Analysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Pathology (AREA)
  • Evolutionary Biology (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Operations Research (AREA)
  • Probability & Statistics with Applications (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Algebra (AREA)
  • Chemical & Material Sciences (AREA)
  • Databases & Information Systems (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN202080009804.1A 2019-01-28 2020-01-21 叠对计量系统和方法 Active CN113330550B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962797557P 2019-01-28 2019-01-28
US62/797,557 2019-01-28
US16/741,574 2020-01-13
US16/741,574 US11333982B2 (en) 2019-01-28 2020-01-13 Scaling metric for quantifying metrology sensitivity to process variation
PCT/US2020/014308 WO2020159737A1 (en) 2019-01-28 2020-01-21 Scaling metric for quantifying metrology sensitivity to process variation

Publications (2)

Publication Number Publication Date
CN113330550A CN113330550A (zh) 2021-08-31
CN113330550B true CN113330550B (zh) 2024-08-06

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CN202080009804.1A Active CN113330550B (zh) 2019-01-28 2020-01-21 叠对计量系统和方法

Country Status (6)

Country Link
US (1) US11333982B2 (https=)
JP (1) JP7303887B2 (https=)
KR (1) KR102513718B1 (https=)
CN (1) CN113330550B (https=)
TW (1) TWI800708B (https=)
WO (1) WO2020159737A1 (https=)

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KR102921020B1 (ko) * 2019-11-28 2026-01-30 케이엘에이 코포레이션 계측 랜드스케이프에 기초한 계측 최적화를 위한 시스템 및 방법
US12406891B2 (en) * 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
EP4338009A4 (en) * 2021-10-21 2025-06-04 KLA Corporation INDUCED SHIFTS FOR IMPROVED OVERHEATING ERROR METROLOGY
US11861824B1 (en) * 2022-02-03 2024-01-02 Kla Corporation Reference image grouping in overlay metrology
US12455509B2 (en) * 2022-02-24 2025-10-28 Nanya Technology Corporation Semiconductor structure and system for manufacturing the same
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
KR102662778B1 (ko) * 2023-08-16 2024-04-30 (주)오로스 테크놀로지 오버레이 계측 장치의 타겟 선정 방법 및 오버레이 계측 장치의 타겟 선정 시스템
US12423803B2 (en) * 2024-01-23 2025-09-23 KLA Con Predicting tool induced shift using Moiré overlay targets

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JP2000173921A (ja) * 1993-02-08 2000-06-23 Nikon Corp 位置合わせ方法、その位置合わせ方法を用いた露光方法、その露光方法を用いたデバイス製造方法、そのデバイス製造方法で製造されたデバイス、並びに位置合わせ装置、その位置合わせ装置を備えた露光装置
JP2006216796A (ja) * 2005-02-03 2006-08-17 Nikon Corp 基準パターン情報の作成方法、位置計測方法、位置計測装置、露光方法、及び露光装置

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US8045786B2 (en) 2006-10-24 2011-10-25 Kla-Tencor Technologies Corp. Waferless recipe optimization
US7873504B1 (en) 2007-05-07 2011-01-18 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout
JP5545782B2 (ja) 2009-07-31 2014-07-09 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置の焦点測定方法、散乱計、リソグラフィシステム、およびリソグラフィセル
KR20120058572A (ko) 2009-08-24 2012-06-07 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 장치, 리소그래피 처리 셀 및 메트롤로지 타겟들을 포함하는 기판
JP5377595B2 (ja) 2011-03-25 2013-12-25 富士フイルム株式会社 着色感放射線性組成物、カラーフィルタ、着色パターンの製造方法、カラーフィルタの製造方法、固体撮像素子、及び液晶表示装置
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KR102326192B1 (ko) * 2017-05-03 2021-11-15 에이에스엠엘 네델란즈 비.브이. 계측 파라미터 결정 및 계측 레시피 선택

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JP2000173921A (ja) * 1993-02-08 2000-06-23 Nikon Corp 位置合わせ方法、その位置合わせ方法を用いた露光方法、その露光方法を用いたデバイス製造方法、そのデバイス製造方法で製造されたデバイス、並びに位置合わせ装置、その位置合わせ装置を備えた露光装置
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Also Published As

Publication number Publication date
CN113330550A (zh) 2021-08-31
JP7303887B2 (ja) 2023-07-05
US20200241428A1 (en) 2020-07-30
KR20210110897A (ko) 2021-09-09
WO2020159737A1 (en) 2020-08-06
KR102513718B1 (ko) 2023-03-23
JP2022523692A (ja) 2022-04-26
TW202043930A (zh) 2020-12-01
TWI800708B (zh) 2023-05-01
US11333982B2 (en) 2022-05-17

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