KR102509854B1 - 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템 - Google Patents

기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템 Download PDF

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Publication number
KR102509854B1
KR102509854B1 KR1020217004619A KR20217004619A KR102509854B1 KR 102509854 B1 KR102509854 B1 KR 102509854B1 KR 1020217004619 A KR1020217004619 A KR 1020217004619A KR 20217004619 A KR20217004619 A KR 20217004619A KR 102509854 B1 KR102509854 B1 KR 102509854B1
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KR
South Korea
Prior art keywords
nozzle
substrate
timing
processing liquid
processing
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KR1020217004619A
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English (en)
Korean (ko)
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KR20210031952A (ko
Inventor
아유미 히구치
히데지 나오하라
유지 오키타
쇼타 이와하타
히로아키 가쿠마
다츠야 마스이
Original Assignee
가부시키가이샤 스크린 홀딩스
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Publication of KR20210031952A publication Critical patent/KR20210031952A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
KR1020217004619A 2018-08-20 2019-07-04 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템 KR102509854B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018154079A JP7177628B2 (ja) 2018-08-20 2018-08-20 基板処理方法、基板処理装置および基板処理システム
JPJP-P-2018-154079 2018-08-20
PCT/JP2019/026589 WO2020039765A1 (ja) 2018-08-20 2019-07-04 基板処理方法、基板処理装置および基板処理システム

Publications (2)

Publication Number Publication Date
KR20210031952A KR20210031952A (ko) 2021-03-23
KR102509854B1 true KR102509854B1 (ko) 2023-03-14

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KR1020217004619A KR102509854B1 (ko) 2018-08-20 2019-07-04 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템

Country Status (5)

Country Link
JP (1) JP7177628B2 (ja)
KR (1) KR102509854B1 (ja)
CN (1) CN112640054A (ja)
TW (1) TWI702649B (ja)
WO (1) WO2020039765A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3085603B1 (fr) * 2018-09-11 2020-08-14 Soitec Silicon On Insulator Procede pour le traitement d'un susbtrat soi dans un equipement de nettoyage monoplaque
JP2021152762A (ja) * 2020-03-24 2021-09-30 株式会社Ｓｃｒｅｅｎホールディングス 学習済みモデル生成方法、学習済みモデル、異常要因推定装置、基板処理装置、異常要因推定方法、学習方法、学習装置、及び、学習データ作成方法
KR102324162B1 (ko) * 2020-04-08 2021-11-10 이지스로직 주식회사 포토레지스트 코팅 품질 검사가 가능한 스핀 코터
KR102327761B1 (ko) * 2020-04-08 2021-11-19 주식회사 이지스로직 Ｄｖｓ와 딥러닝을 이용한 스핀 코터의 포토레지스트 코팅 품질 검사 시스템
KR102368201B1 (ko) * 2020-04-08 2022-03-02 이지스로직 주식회사 스핀 코터의 포토레지스트 코팅 품질 검사 시스템
US11699595B2 (en) 2021-02-25 2023-07-11 Applied Materials, Inc. Imaging for monitoring thickness in a substrate cleaning system
KR102585478B1 (ko) * 2021-10-14 2023-10-10 주식회사 램스 딥러닝을 이용한 스핀 코터의 포토레지스트 도포 상태 검사 시스템
JP2023127856A (ja) * 2022-03-02 2023-09-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、及び基板処理装置

Citations (2)

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JP2003273003A (ja) * 2002-03-15 2003-09-26 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2016072344A (ja) * 2014-09-29 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

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JP3481416B2 (ja) * 1997-04-07 2003-12-22 大日本スクリーン製造株式会社 基板処理装置及び方法
JPH11330041A (ja) * 1998-05-07 1999-11-30 Dainippon Screen Mfg Co Ltd エッチング液による基板処理装置
JP4601452B2 (ja) * 2005-02-22 2010-12-22 大日本スクリーン製造株式会社 基板処理装置
JP2010151925A (ja) * 2008-12-24 2010-07-08 Hitachi High-Technologies Corp 基板処理装置、フラットパネルディスプレイの製造装置およびフラットパネルディスプレイ
JP2009218622A (ja) * 2009-06-29 2009-09-24 Canon Anelva Corp 基板処理装置及び基板処理装置における基板位置ずれ補正方法
JP6278759B2 (ja) 2014-03-11 2018-02-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6251086B2 (ja) * 2014-03-12 2017-12-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016122681A (ja) * 2014-12-24 2016-07-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6635869B2 (ja) * 2015-06-16 2020-01-29 東京エレクトロン株式会社 処理装置、処理方法および記憶媒体
JP6541491B2 (ja) 2015-07-29 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 流下判定方法、流下判定装置および吐出装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273003A (ja) * 2002-03-15 2003-09-26 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2016072344A (ja) * 2014-09-29 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
TW202010003A (zh) 2020-03-01
TWI702649B (zh) 2020-08-21
WO2020039765A1 (ja) 2020-02-27
KR20210031952A (ko) 2021-03-23
JP7177628B2 (ja) 2022-11-24
JP2020031083A (ja) 2020-02-27
CN112640054A (zh) 2021-04-09

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