KR102509782B1 - 지지 유리 기판 및 이것을 사용한 적층체 - Google Patents

지지 유리 기판 및 이것을 사용한 적층체 Download PDF

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Publication number
KR102509782B1
KR102509782B1 KR1020177003666A KR20177003666A KR102509782B1 KR 102509782 B1 KR102509782 B1 KR 102509782B1 KR 1020177003666 A KR1020177003666 A KR 1020177003666A KR 20177003666 A KR20177003666 A KR 20177003666A KR 102509782 B1 KR102509782 B1 KR 102509782B1
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KR
South Korea
Prior art keywords
substrate
glass substrate
supporting
processing
semiconductor package
Prior art date
Application number
KR1020177003666A
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English (en)
Korean (ko)
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KR20170095798A (ko
Inventor
료타 스즈키
타카히로 타카하시
Original Assignee
니폰 덴키 가라스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 니폰 덴키 가라스 가부시키가이샤 filed Critical 니폰 덴키 가라스 가부시키가이샤
Priority to KR1020237003562A priority Critical patent/KR102630404B1/ko
Priority claimed from PCT/JP2015/081983 external-priority patent/WO2016098499A1/ja
Publication of KR20170095798A publication Critical patent/KR20170095798A/ko
Application granted granted Critical
Publication of KR102509782B1 publication Critical patent/KR102509782B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Compositions (AREA)
KR1020177003666A 2014-12-16 2015-11-13 지지 유리 기판 및 이것을 사용한 적층체 KR102509782B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237003562A KR102630404B1 (ko) 2014-12-16 2015-11-13 지지 유리 기판 및 이것을 사용한 적층체

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2014-253574 2014-12-16
JP2014253574 2014-12-16
JPJP-P-2015-031496 2015-02-20
JP2015031496 2015-02-20
JPJP-P-2015-197313 2015-10-05
JP2015197313A JP6627388B2 (ja) 2014-12-16 2015-10-05 支持ガラス基板及びこれを用いた積層体
PCT/JP2015/081983 WO2016098499A1 (ja) 2014-12-16 2015-11-13 支持ガラス基板及びこれを用いた積層体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020237003562A Division KR102630404B1 (ko) 2014-12-16 2015-11-13 지지 유리 기판 및 이것을 사용한 적층체

Publications (2)

Publication Number Publication Date
KR20170095798A KR20170095798A (ko) 2017-08-23
KR102509782B1 true KR102509782B1 (ko) 2023-03-14

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KR1020177003666A KR102509782B1 (ko) 2014-12-16 2015-11-13 지지 유리 기판 및 이것을 사용한 적층체

Country Status (4)

Country Link
JP (1) JP6627388B2 (ja)
KR (1) KR102509782B1 (ja)
CN (1) CN107074618A (ja)
TW (1) TWI673836B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018095514A (ja) * 2016-12-14 2018-06-21 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体
WO2018110163A1 (ja) * 2016-12-14 2018-06-21 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体
JP7011215B2 (ja) * 2016-12-14 2022-02-10 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体
TWI697077B (zh) * 2017-01-24 2020-06-21 美商通用電機股份有限公司 功率電子封裝及其製造方法
JP7276644B2 (ja) * 2017-08-31 2023-05-18 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
WO2020129297A1 (ja) * 2018-12-21 2020-06-25 Ａｇｃ株式会社 積層体及び積層体の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004067460A (ja) 2002-08-07 2004-03-04 Central Glass Co Ltd ガラス組成物
JP2010182723A (ja) 2009-02-03 2010-08-19 Fujitsu Ltd 半導体装置の製造方法
JP2012015216A (ja) * 2010-06-29 2012-01-19 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2761978B1 (fr) * 1997-04-11 1999-05-07 Saint Gobain Vitrage Composition de verre et substrat en verre trempe chimiquement
JP3683123B2 (ja) * 1999-04-30 2005-08-17 セントラル硝子株式会社 プレス成形用ガラスおよび情報記録媒体用基板ガラス
JP2002025040A (ja) * 2000-06-30 2002-01-25 Hitachi Ltd 磁気ディスク用ガラス基板及びそれを用いた磁気ディスク
US9434644B2 (en) * 2010-09-30 2016-09-06 Avanstrate Inc. Cover glass and method for producing cover glass
JP5896338B2 (ja) * 2011-01-18 2016-03-30 日本電気硝子株式会社 強化用ガラスの製造方法及び強化ガラス板の製造方法
JP2012221591A (ja) * 2011-04-04 2012-11-12 Ohara Inc 発光素子及び発光素子用基板材料
KR101474399B1 (ko) * 2012-05-15 2014-12-22 주식회사 엘지화학 알칼리 유리 및 그 제조 방법
KR101465170B1 (ko) * 2012-06-21 2014-11-25 주식회사 엘지화학 알칼리 유리 및 그 제조 방법
JP2014024717A (ja) * 2012-07-27 2014-02-06 Asahi Glass Co Ltd Ｃｕ−Ｉｎ−Ｇａ−Ｓｅ太陽電池用ガラス板およびそれを用いた太陽電池とその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004067460A (ja) 2002-08-07 2004-03-04 Central Glass Co Ltd ガラス組成物
JP2010182723A (ja) 2009-02-03 2010-08-19 Fujitsu Ltd 半導体装置の製造方法
JP2012015216A (ja) * 2010-06-29 2012-01-19 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI673836B (zh) 2019-10-01
TW201630128A (zh) 2016-08-16
JP2016155736A (ja) 2016-09-01
KR20170095798A (ko) 2017-08-23
JP6627388B2 (ja) 2020-01-08
CN107074618A (zh) 2017-08-18

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