KR102506737B1 - Light emitting device and light unit having thereof - Google Patents

Abstract

The light emitting device disclosed in the embodiment may include a plurality of light emitting chips having a first light emitting chip and a second light emitting chip emitting first and second lights having different peak wavelengths; and a phosphor layer disposed on the second light emitting chip and exciting a portion of a peak wavelength of the second light to emit a peak wavelength of a third light, wherein the phosphor layer is disposed on a region different from that of the first light emitting chip. The first light and the second light include light of the same color, and the second light includes a longer wavelength than the first light.

Description

Light emitting device and light unit having the same {LIGHT EMITTING DEVICE AND LIGHT UNIT HAVING THEREOF}

The embodiment relates to a light emitting device.

The embodiment relates to a light unit having a light emitting element.

As one of the light emitting devices, a light emitting diode (LED) is widely used. Light emitting diodes use the properties of compound semiconductors to convert electrical signals into light forms such as infrared, visible, and ultraviolet light.

As the light efficiency of the light emitting element increases, the light emitting element is applied to various fields including display devices, vehicle lamps, and various lighting devices.

The embodiment provides a light emitting device in which a phosphor layer is disposed on a light emitting chip emitting a relatively high peak wavelength among light emitting chips emitting different peak wavelengths.

The embodiment provides a light emitting device in which a phosphor layer is disposed on a light emitting chip emitting a relatively high peak wavelength among light emitting chips emitting the same color.

An embodiment provides a light emitting device including a body in which barrier parts are disposed between light emitting chips emitting different peak wavelengths.

The embodiment provides a light emitting device in which light emitting chips emitting different peak wavelengths are disposed in different cavities and a phosphor layer is disposed on the light emitting chips emitting relatively high peak wavelengths.

An embodiment provides a light emitting device having a phosphor layer on a light emitting chip emitting a relatively high peak wavelength among light emitting chips emitting different peak wavelengths, and an optical filter reflecting a relatively high peak wavelength on the phosphor layer.

A light emitting module and a light unit having a light emitting device according to an embodiment are provided.

A light emitting device according to an embodiment includes a plurality of light emitting chips each having a first light emitting chip and a second light emitting chip emitting first and second lights having different peak wavelengths; and a phosphor layer disposed on the second light emitting chip and exciting a portion of a peak wavelength of the second light to emit a peak wavelength of a third light, wherein the phosphor layer is disposed on a region different from that of the first light emitting chip. The first light and the second light include light of the same color, and the second light includes a longer wavelength than the first light.

A light emitting device according to an embodiment includes a plurality of light emitting chips having different peak wavelengths of light of the same color; a first light-transmissive resin layer disposed on a first light-emitting chip that emits first light of a relatively shorter wavelength among the plurality of light-emitting chips and emits the first light without wavelength conversion; and a phosphor layer disposed on a second light emitting chip that emits second light having a relatively long wavelength among the plurality of light emitting chips, wherein the plurality of light emitting chips are disposed separately from each other.

Lifespan of the light emitting device according to the embodiment may be improved.

The embodiment can improve the lifespan of a light emitting chip and a phosphor layer emitting different peak wavelengths.

In the embodiment, by disposing a phosphor layer on a light emitting chip emitting a relatively long wavelength among light emitting chips emitting different peak wavelengths, color reproducibility can be improved with light emitted through a light emitting chip having a relatively short wavelength.

The embodiment can improve the lifespan of a light emitting chip providing an excitation wavelength to a phosphor layer having quantum dots and a light emitting device having the same.

Reliability of the light emitting module and light unit having the light emitting device according to the embodiment may be improved.

1 is a plan view showing a light emitting device according to a first embodiment.
2 is an AA-side cross-sectional view of the light emitting device of FIG. 1 .
FIG. 3 is a view showing an example of the phosphor layer of FIG. 2 .
FIG. 4 is a view showing another example of the phosphor layer of FIG. 2 .
5 and 6 are views showing modified examples of the phosphor layer of FIG. 2 .
7 is a modified example of the light emitting device of FIG. 2 .
8 is a modified example of the light emitting device of FIG. 2 .
9 is a side cross-sectional view showing a light emitting device according to a second embodiment.
10 is a side cross-sectional view showing a light emitting device according to a third embodiment.
11 is a side cross-sectional view showing a light emitting device according to a fourth embodiment.
12 is a side cross-sectional view showing a light emitting device according to a fifth embodiment.
13 is a side cross-sectional view showing a light emitting device according to a sixth embodiment.
14 is a view illustrating a light unit having a light emitting device according to an embodiment.
15 is a view illustrating a light unit having a plurality of light emitting elements according to an embodiment.
16 is a view showing a light unit having a light emitting chip according to a seventh embodiment.
17 is a diagram illustrating an example of a light emitting device or a light emitting chip of a light unit according to an embodiment.
18 is another example of a light emitting device or a light emitting chip of a light unit according to an embodiment.
19 is a view showing an example of a wavelength spectrum emitted from a light emitting device according to an embodiment.
20 is a diagram showing the life time of a light emitting chip according to an excitation wavelength of the light emitting chip according to an embodiment.
21 is a graph showing excitation efficiency according to a peak wavelength according to an embodiment.
22 is a graph showing life time according to output power of a light emitting chip according to an embodiment.
23 is a diagram comparing life time according to a peak wavelength and output power of a light emitting chip in a comparative example.
FIG. 24 is a diagram comparing life time according to the light emitting chip of FIG. 23 .
25 is a diagram comparing life time according to output power and peak wavelength of a light emitting chip according to an embodiment.
26 is a diagram illustrating a light emitting chip and output power of a light emitting device according to an embodiment.
FIG. 27 is a diagram comparing life time according to the light emitting chip of FIG. 26 .

In the description of the embodiment, each layer (film), region, pattern or structure is “on” or “under” the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in, "up / on" and "under / under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criterion for the upper/upper or lower/lower of each layer will be described based on the drawings.

Hereinafter, a light emitting device according to embodiments will be described in detail with reference to the accompanying drawings.

1 is a plan view of a light emitting device according to an embodiment, and FIG. 2 is a cross-sectional view of the light emitting device of FIG. 1 taken along A-A side.

Referring to FIGS. 1 and 2 , the light emitting device 100 according to the embodiment includes a phosphor layer 180 on a light emitting chip 153 emitting a relatively long wavelength among light emitting chips 151 and 153 emitting different peak wavelengths. ) can be placed. The phosphor layer 180 may be in the form of a film having a certain thickness or a molding member.

In the light emitting device 100 according to the embodiment, a phosphor layer 180 is disposed on a light emitting chip 153 emitting a relatively long wavelength among light emitting chips 151 and 153 having the same color and emitting light of different peak wavelengths. can be placed.

The light emitting device 100 according to the embodiment may include a phosphor layer 180 having a relatively long wavelength as an excitation wavelength among the light emitting chips 151 and 153 having the same color and emitting light of different peak wavelengths.

The light emitting device 100 according to the embodiment may include a body 110 in which a barrier part 114 is disposed between the light emitting chips 151 and 153 emitting light of the same color and different peak wavelengths.

In the light emitting device 100 according to the embodiment, light emitting chips 151 and 153 having the same color and emitting different peak wavelengths are disposed in different cavities 115 and 117, respectively, and on the light emitting chip 153 emitting relatively long wavelengths. A phosphor layer 180 may be disposed.

The light emitting device 100 is electrically connected to a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and the plurality of lead frames 121, 131, and 141, and light of different peak wavelengths ( Among the light emitting chips 151 and 153 emitting light L1 and L2, the light-transmissive resin layers 161 and 163 covering each of the light emitting chips 151 and 153, and the light emitting chips 151 and 153, light emitting light L2 having a relatively long wavelength is emitted. A phosphor layer 180 disposed on the chip 153 is included.

The body 110 may include a conductive substrate such as silicon, a synthetic resin material such as polyphthalamide (PPA), a ceramic substrate, an insulating substrate such as PLCC (Plastic Leaded Chip Carrier), a metal substrate (eg MCPCB-Metal core PCB), Alternatively, it may be formed by including a white insulating layer. The body 110 may include a reflector 113 having concave cavities 115 and 117 with open tops and a support part 111 supporting the reflector 113, but is not limited thereto. As another example, the body 110 may not include the support part 111 , and in this case, a plurality of lead frames 121 , 131 , and 141 may be disposed on the bottom of the body 110 .

The body 110 may include a plurality of cavities 115 and 117 . The cavities 115 and 117 may include a first cavity 115 and a second cavity 117 spaced apart from the first cavity 115 . The first and second cavities 115 and 117 may be formed in a concave structure from the upper surface 119 of the body 110, for example, a recess structure or a cup structure. The top view shape of the first and second cavities 115 and 117 may include a polygonal shape, a circular shape, an elliptical shape, or a polygonal shape with curved corners. Each of the cavities 115 and 117 may have a shape in which an upper length (D4 in FIG. 1 ) is wider than a lower length when viewed from a side cross-section. The circumferential surfaces of the cavities 115 and 117 may be inclined surfaces or vertical surfaces. When the circumferential surfaces of the cavities 115 and 117 have inclined surfaces, they may be formed as inclined surfaces having one or different angles with respect to the bottom of the cavities 115 and 117, but are not limited thereto. Accordingly, light emitted from the light emitting chips 151 and 153 may be reflected on the circumferential surfaces of the cavities 115 and 117, and light extraction efficiency may be improved.

As shown in FIG. 1 , when the plurality of cavities 115 and 117 are disposed in the longitudinal direction of the light emitting device 100, the length D1 of the body 110 may be wider than the width D2, for example, twice as large. can be extra wide. As another example, the plurality of cavities 115 and 117 may be arranged in a width direction, but is not limited thereto.

A barrier portion 114 may be disposed between the first and second cavities 115 and 117 , and the barrier portion 114 may be made of the same material as the body 110 or a different resin material. The barrier part 114 may be disposed at the same height as or lower than the upper surface of the body 110, but is not limited thereto. The outer side of the body 110 may be formed vertically or inclined.

A plurality of lead frames 121 , 131 , and 141 are disposed on the body 110 . The plurality of lead frames 121 , 131 and 141 may be disposed on the bottom of the cavity 115 and 117 . At least two of the plurality of lead frames 121 , 131 , and 141 may be disposed in respective cavities 115 and 117 . For example, the first lead frame 121 and the first frame part 132 of the second lead frame 131 are disposed in the first cavity 115, and the second lead frame 115 is disposed in the second cavity 115. The second frame portion 134 and the third lead frame 141 of (131) may be disposed.

The second lead frame 131 includes an extension part 136 disposed below the barrier part 114, and the extension part 136 is disposed between the barrier part 114 and the support part 111. It can be. The extension part 136 is connected between the first and second frame parts 132 and 134 and may extend from the first and second cavities 115 and 117 to the inside of the body 110 .

Among the first lead frames 121 , the first lead part 123 extending to one side of the body 110 may be disposed on the lower surface of the body 110 . Among the third lead frames 141, the second lead part 143 extending from the other side of the body 110 may be disposed on the lower surface of the body 110.

The first lead part 123 of the first lead frame 121 and the second lead part 143 of the third lead frame 141 may be bonded on a circuit board or may be supplied with external power.

The first to third lead frames 121 , 131 , and 141 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), It may include at least one of platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P). In addition, the first to third lead frames 121 , 131 , and 141 may be formed to have a single-layer or multi-layer structure, but are not limited thereto. A separate reflective layer may be further formed on the surfaces of the first to third lead frames 121 , 131 , and 141 , but is not limited thereto.

The light emitting device 100 according to the embodiment may include a plurality of light emitting chips 151 and 153, and the plurality of light emitting chips 151 and 153 may be two or more. The plurality of light-emitting chips 151 and 153 include one or more light-emitting chips 151 disposed in the first cavity 115 and one or more than two light-emitting chips disposed in the second cavity 117. Two light-emitting chips 153 may be included.

The first and second light emitting chips 151 and 153 may emit different peak wavelengths. The first and second light emitting chips 151 and 153 may emit at least one of ultraviolet light, blue light, green light, and red light, and may emit short wavelength light such as ultraviolet light or blue light. The first and second light emitting chips 151 and 153 may have the same color and emit different peak wavelengths. The first light emitting chip 151 may emit light having a shorter wavelength closer to ultraviolet rays than the peak wavelength of the second light emitting chip 153 . Conversely, the second light emitting chip 153 may emit light having a longer wavelength than the peak wavelength of the first light emitting chip 151 . The embodiment can improve color reproducibility in a light unit such as a display by providing a short wavelength of the first light emitting chip 151 among the first and second light emitting chips 151 and 153 without wavelength conversion.

The first and second light emitting chips 151 and 153 may emit blue light, eg, peak wavelengths in the range of 430 nm to 470 nm. The first light emitting chip 151 may emit a peak wavelength of 455 nm or less, for example, in the range of 440 nm to 450 nm, and color reproducibility may deteriorate when the blue light of the first light emitting chip 151 is out of range. The second light emitting chip 153 may emit a peak wavelength exceeding 455 nm, for example, in the range of 460 nm to 470 nm, and when the blue light range of the second light emitting chip 153 is lower than the range, when used as an excitation wavelength, 2 There is a problem that the lifespan of the light-emitting chip 153 is reduced, and when it is higher than the above range, there is a problem that the excitation efficiency is lowered. The difference between the peak wavelengths of the first and second light emitting chips 151 and 153 may be greater than or equal to 5 nm, for example, in the range of 10 nm to 30 nm. may be insignificant.

The first light emitting chip 151 may be disposed on the first frame part 132 of the second lead frame 131 or the first lead frame 121 in the first cavity 115 . The first light emitting chip 151 may be attached to the first frame part 132 of the second lead frame 131 with an adhesive, and the first lead frame 121 and the second lead frame It may be connected to the first frame portion 132 of (131) with a wire 155. The first light-emitting chip 151 may be connected to different lead frames 121 and 131 by wires 155 in the case of a horizontal chip or disposed in a flip chip method, and in the case of a vertical chip, the first lead frame 121 It may be electrically connected to the first frame unit 132 by being attached with a conductive adhesive, and connected to the first lead frame 121 by a wire 155 .

The second light emitting chip 153 may be disposed on the third lead frame 141 or the second lead frame 131 in the second cavity 117 . The second light emitting chip 153 may be attached to the third lead frame 141 with an adhesive, and may be attached to the second frame part 134 of the second lead frame 131 and the third lead frame. It can be connected to (141) with a wire (157). When the second light emitting chip 153 is a horizontal chip, it may be connected to different lead frames 131 and 141 by wires 157 or disposed in a flip chip manner. When the second light-emitting chip 153 is a vertical chip, the vertical chip is electrically connected to the third lead frame 141 by being attached with a conductive adhesive, and the second frame part 134 of the second lead frame 131 may be connected with a wire 157.

The first frame part 132 and the second frame part 134 of the second lead frame 131 may be electrically connected to each other or separately separated from each other. Also, the first and second light-emitting chips 151 and 153 may be connected in series or in parallel, but are not limited thereto.

The light-transmitting resin layers 161 and 163 include a first light-transmitting resin layer 161 disposed in the first cavity 115 and a second light-transmitting resin layer 163 disposed in the second cavity 117 . The first light-transmitting resin layer 161 is disposed on the surface of the first light-emitting chip 151 to protect the first light-emitting chip 151 . The second light-transmitting resin layer 163 is disposed on the surface of the second light-emitting chip 153 to protect the second light-emitting chip 153 .

The light-transmissive resin layers 161 and 163 may include a resin material such as silicon or epoxy. The light-transmissive resin layers 161 and 163 may have a refractive index lower than that of a semiconductor material constituting the light emitting chips 151 and 153 . The light-transmissive resin layers 161 and 163 may be, for example, resin layers that do not have a wavelength conversion member such as a phosphor therein. The light-transmitting resin layers 161 and 163 may be spaced apart from each other by the barrier part 114 . The upper surfaces of the light-transmitting resin layers 161 and 163 may be formed in a flat or concave or convex shape. An optical lens may be disposed on one or both of the equators of the light-transmitting resin layers 161 and 163, and the optical lens may include a concave shape, a convex shape, or a shape having a total reflection surface with respect to the light emitting element.

The phosphor layer 180 may be disposed on the second cavity 115 . As shown in FIG. 1 , the length D3 and width of the phosphor layer 180 are longer than the upper length D4 and width of the second cavity 117 to cover the area of the second cavity 117 . can

The phosphor layer 180 may be disposed on, for example, the second light emitting chip 153 emitting a peak wavelength of a long wavelength among the first and second light emitting chips 151 and 153 . Among the first and second light emitting chips 151 and 153 , the phosphor layer 180 may be spaced apart from, for example, the first light emitting chip 151 , which emits a relatively short peak wavelength. The phosphor layer 180 overlaps the second light-transmitting resin layer 163 in a vertical direction, and wavelength-converts light incident through the second light-transmitting resin layer 163 . The phosphor layer 180 may be disposed in a region that does not overlap with the first light-transmitting resin layer 161 in a vertical direction. The phosphor layer 180 may be disposed on a region different from that of the first light emitting chip 151 . The phosphor layer 180 may be disposed on the upper surface 119 of the body 110 and the upper surface of the barrier part 114 . The outer surface of the lower surface of the phosphor layer 180 may be attached to the upper surface 119 of the body 110 and the upper surface of the barrier part 114 with an adhesive. The phosphor layer 180 may be attached to the second light-transmitting resin layer 163 . Since the second light-transmitting resin layer 163 is disposed between the phosphor layer 180 and the second light emitting chip 153, the phosphor layer 180 is disposed at a position spaced apart from the second light emitting chip 153. Accordingly, damage caused by heat generated from the second light emitting chip 153 can be prevented.

In the phosphor layer 180, a phosphor may be added in a resin material such as transparent silicone or epoxy. The phosphor layer 180 converts the wavelength of light emitted from the second light emitting chip 153 . The phosphor layer 180 may include at least one of red, green, yellow, and blue phosphors or phosphors of different colors. The phosphor excites a part of the emitted light to emit light of a different wavelength.

The phosphor layer 180 may include a phosphor such as quantum dots. The quantum dot may include a II-VI compound or a III-V compound semiconductor, and may include at least one of red, green, yellow, and red quantum dots, or different types. The quantum dots are nanometer-sized particles that may have optical properties arising from quantum confinement. In order to emit light of a desired wavelength from the quantum dots when stimulated with a specific excitation source, a specific composition(s), structure and/or size of the quantum dots may be selected. Quantum dots can be tuned to emit light across the visible spectrum by changing their size.

The quantum dot may include one or more semiconductor materials, and examples of the semiconductor material include a group IV element, a group II-VI compound, a group II-V compound, a group III-VI compound, a group III-V compound, a group IV- Group VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, alloys comprising any of the foregoing, and/or ternary and quaternary mixtures or alloys. It may include a mixture comprising any of the foregoing. The quantum dots may be, for example, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, InSb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS ₂ , CuInSe ₂ , MgS, MgSe, MgTe, and the like, and combinations thereof. In the case of such quantum dots, since the change in luminous efficiency according to temperature is large, the change in luminous efficiency can be reduced by separating them from the second light emitting chip 153 as in the embodiment.

The wavelength range of the quantum dots according to the embodiment may be adjusted by changing the size of the quantum dots and/or the composition of the quantum dots. For example, semiconductor nanocrystals containing CdSe can be tuned in the visible light region; Semiconductor nanocrystals containing InAs can be tuned in the infrared region.

The quantum dots according to the embodiment emit red light, and may emit peak wavelengths in the range of, for example, 615 nm to 630 nm. Quantum dots according to embodiments emit green light, and may emit peak wavelengths in the range of, for example, 520 nm to 540 nm. In the embodiment, color reproducibility can be improved by using blue light from the first and second light emitting chips 151 and 153 and green and red light from the phosphor layer 180 . Quantum dots according to embodiments may emit yellow light, for example, in the range of 580 to 595 nm.

As another example, the phosphor layer 180 may be selectively formed from among YAG, TAG, silicate, nitride, and oxy-nitride-based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, a blue phosphor, or a green phosphor.

In the light emitting device 100 according to the embodiment, the first light L1 emitted from the first light emitting chip 151 may have a shorter wavelength than the second light L2 emitted from the second light emitting chip 153 . The first and second lights L1 and L2 may be blue wavelength lights. A portion of the second light L2 may be converted into a third light L3 having a longer wavelength than the second light L2 by the phosphor layer 180 . The third light L3 may include red and green light, or may include at least one of red, green, and yellow light. In the light emitting device 100 according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, color reproducibility can be improved by using relatively short wavelength blue light. . In addition, by using the long-wavelength second light L2 emitted from the second light-emitting chip 153 as the excitation wavelength of the phosphor layer 180, the lifespan of the second light-emitting chip 153 can be improved.

In addition, the embodiment separates and arranges the first light emitting chip 151 that directly emits primary color (eg, blue) light within one light emitting device 100 and the second light emitting chip 153 that provides an excitation wavelength, It has a luminance improvement effect.

Here, lifespan and color reproducibility of the light emitting chips 151 and 153 in the light emitting device 100 will be described.

19 is a diagram showing an example of a wavelength spectrum of a light emitting device according to an embodiment. 19 and 2 , in the light emitting device 100, the peak wavelength λ1 of the first light L1 emitted from the first light emitting chip 151 is emitted without converting the wavelength, and the second light emitting chip ( Since a part of the peak wavelength λ2 of the second light L2 emitted from 153) is converted into the third light L3, the peak wavelength λ2 of the second light L2 and the phosphor layer 180 A mixed wavelength spectrum (λ3) having a peak wavelength of the third light L3 converted by λ3 may be emitted. This means that in the region of the first cavity 115, the peak wavelength of the first light L1 is It is emitted without conversion, and may be emitted in a spectrum in which the peak wavelengths of the second light L2 and the third light L3 are mixed in the region of the second cavity 117. Accordingly, the light emitting device 100 according to the embodiment ) may be emitted in a spectrum in which the blue wavelength of the first light L1, the blue wavelength of the second light L2, and the green and red wavelengths of the third light L3 are mixed.

The embodiment can improve color reproducibility by the peak wavelength of the first light L1 of the first light emitting chip 151 without disposing a separate phosphor on the first light emitting chip 151, and also A decrease in the luminous flux of the first light L1 emitted from the first light-emitting chip 151 can be prevented. Since the phosphor is not disposed on the first light emitting chip 151, the amount of the phosphor or the area of the phosphor layer 180 can be reduced. In addition, since the phosphor layer 180 is disposed at a position spaced apart from the second light emitting chip 153 in the light emitting device 100, deterioration of the phosphor can be reduced.

In addition, the second light emitting chip 153 sets the peak wavelength λ2 of the second light L2 higher than the peak wavelength λ1 of the first light L1 of the first light emitting chip 151 to the phosphor layer 180. As an excitation wavelength may be provided, the lifetime of the second light emitting chip 153 may be increased. In addition, since the light output of the first light emitting chip 151 not used as the excitation wavelength of the phosphor layer 180 does not have to be higher than that of the second light emitting chip 153 used as the excitation wavelength, the lifetime of the second light emitting chip ( 153) may be longer.

The dependence of the lifetime of the light emitting chip according to the excitation wavelength and light output of the light emitting chip will be described below.

Referring to FIG. 20 , the higher the excitation wavelength incident on the phosphor layer, the longer the lifetime of a chip emitting the excitation wavelength and the lower the excitation efficiency. For example, it can be seen that a light emitting chip having an excitation wavelength emitted from the light emitting chip having a long wavelength (eg, 470 nm) has a longer lifetime than a light emitting chip having a short wavelength (eg, 440 nm). In addition, it can be seen that the lower the light output of the light emitting chip, the longer the lifetime compared to the light emitting chip emitting the same excitation wavelength. Therefore, when the excitation wavelength of the light emitting chip incident to the phosphor layer is increased and the light output is decreased, the lifespan of the light emitting chip may be increased. The lifetime dependence of the light emitting chip is proportional to the excitation wavelength of the light emitting chip and inversely proportional to the light output.

As shown in FIG. 21 , it can be seen that the excitation efficiency of the phosphor layer disposed on the light emitting chip decreases as the excitation wavelength increases. That is, the excitation efficiency of the phosphor layer can be gradually reduced from 450 nm to 550 nm at the excitation wavelength, and thus, it can be seen that the excitation efficiency varies according to the excitation wavelength.

If, in FIG. 2 , the light output when the peak wavelength of the long wavelength emitted from the second light emitting chip 153 is provided as the excitation wavelength of the phosphor layer 180 and the light output of the short wavelength emitted from the first light emitting chip 151 When the light output when the peak wavelength is provided as the excitation wavelength of the phosphor layer 180 is the same, the excitation efficiency of the phosphor layer 180 excited with the long-wavelength peak wavelength emitted from the second light emitting chip 153 is slightly However, the lifespan of the second light emitting chip 153 can be improved. That is, the light emitting device of the embodiment can improve the lifetime of the second light emitting chip 153 that provides the peak wavelength of a long wavelength as the excitation wavelength compared to the comparative example having the light emitting chip providing the same short wavelength as the excitation wavelength. Also, since the excitation wavelength is not provided to the first light emitting chip 151, the lifespan of the first light emitting chip 151 can be improved and color reproducibility can be improved.

22 is a graph comparing lifetimes of light emitting chips according to light output, and FIGS. 23 and 24 are diagrams comparing lifetimes of light emitting chips according to peak wavelengths and light outputs.

As shown in FIG. 22 , it can be seen that as the light output of the light emitting chip increases, the lifetime of the light emitting chip is inversely proportional to the light output. As shown in FIGS. 23 and 24 , when the phosphor layers are disposed on the first and second light emitting chips, the first peak wavelength λ1 of the first light emitting chip and the first light output B1 by the phosphor layer are Although higher than the second peak wavelength λ2 of the two light-emitting chips and the second light output B2 by the phosphor layer, as shown in FIG. 24, the lifespan of the second light-emitting chip generating the second light output B2 is the first light It can be seen that the lifespan of the first light emitting chip emitting the output B1 is longer than that of the first light emitting chip. Also, when the second light output (B2) of the second light emitting chip is raised to the same level as the first light output (B1), the lifespan of the light emitting chip generating the third light output (B3) at this time is slightly longer as shown in FIG. can be seen to decrease. Accordingly, when the first peak wavelength λ1 is replaced with the second peak wavelength λ2, the lifespan of the light emitting chip is improved, but the second light output B2 by the second peak wavelength λ2 is reduced to the first peak wavelength λ2. It can be seen that when the output is increased to the same output as the first light output B1 by the peak wavelength, the lifespan is slightly reduced. Overall, it can be seen that the lifetime of the light emitting chip providing the second peak wavelength of the long wavelength as the excitation wavelength is improved compared to the light emitting chip generating the first light output B1 regardless of the light outputs B2 and B3. Therefore, as shown in FIG. 2 , the lifespan of the second light emitting chip 153 having the second peak wavelength λ2 as an excitation wavelength can be extended. In the embodiment, since the phosphor layer 180 is not disposed on the first light emitting chip 151, color reproducibility can be improved in a light source requiring a short wavelength, such as a display. In the embodiment, the first light emitting chip 151 directly emits the first light L1, the second light emitting chip 153 emits the second light L2 and the third light L3, and the phosphor layer 180 ) By providing the light emitting device 100 having a life span and color reproducibility of the light emitting device 100 can be improved.

FIG. 25 shows the relationship between the excitation wavelength of a light emitting chip and the lifetime of a phosphor layer in light output according to an embodiment, FIG. 26 is a view comparing the peak wavelength and light output of FIG. 25, and FIG. The lifetime of the light emitting chip according to the peak wavelength and light output was compared.

As shown in FIG. 25 , when a phosphor layer is disposed on a light emitting chip having a light output of 70 mW and a peak wavelength of 445 nm, the fluorescence output P1 is represented as the first light output B1 shown in FIG. 26 . In order to improve the lifetime of the light emitting chip, the fluorescence output P2 when the wavelength is 465 nm and the light output is 70 mW is reduced to the second light output B2 in FIG. 26 . Here, in order to compensate for the second light output B2 with the first light output B1, the third light output B3 may be obtained by multiplying the second light output B2 by 1.2. In this case, in FIG. 27 , the lifespan of the light emitting chip having the first light output B1 is about 1100 hours, but the lifespan of the light emitting chip having the second light output B2 is increased to about 4000 hours, and the lifespan of the light emitting chip having the third light output B3 ), it can be seen that the lifetime of the light emitting chip is about 2500 hours. That is, as shown in FIG. 25 , when the peak wavelength is high within the same color, it can be seen that the lifetime of the light emitting chip is improved even if the light output is increased.

In the embodiment, the peak wavelength emitted from the light emitting chip having a relatively long wavelength within the same color can be used as the excitation wavelength, thereby improving the lifetime of the light emitting chip having a long wavelength compared to the case where the light emitting chip having a short wavelength is used as the excitation wavelength.

3 to 6 are diagrams showing examples of the phosphor layer of the light emitting device according to the embodiment.

Referring to FIG. 3 , the phosphor layer 180 according to the embodiment includes a resin layer 182 having a phosphor in a transparent tube 181 . The transparent tube 181 may be implemented as a capillary tube made of plastic material or glass material, but is not limited thereto. The resin layer 182 is sealed in the transparent tube 181 and may include transparent silicone or epoxy, and the phosphor may be, for example, a quantum dot disclosed in the embodiment, but is not limited thereto. The shape of the transparent tube 181 may be a circular cross section or a polygonal cross section, but is not limited thereto. The thickness of the phosphor layer 180 according to the embodiment may be 2 nm or less, for example, 1.5 nm or less, and when the thickness exceeds this range, the thickness of the light emitting device may be increased.

Referring to FIG. 4 , the phosphor layer 180 according to the embodiment includes a sidewall 186 having an open area 184, a resin layer 185 having a phosphor in the sidewall 186, the sidewall 186, and a number of It includes transparent films 187 and 188 disposed on at least one of upper and lower surfaces of the stratum 185 .

The phosphor layer 180 may have a thickness of 0.7 mm or more, for example, in a range of 0.75 mm to 1.5 mm. When the thickness of the phosphor layer 180 is less than 0.7 mm, it is difficult to secure the thickness of the resin layer 185 and the wavelength conversion efficiency decreases. When the thickness exceeds 1.5 mm, the thickness of the light emitting element increases, and the transparent Light loss may occur when the thickness of the films 187 and 188 increases. Here, the thickness of the resin layer 185 may be thinner than the thickness of the sidewall 186, and may be less than 1 mm, for example, in the range of 0.4 mm to 0.7 mm. When the thickness of the resin layer 185 is smaller than the above range, the wavelength conversion efficiency is lowered, and when the thickness of the resin layer 185 is thicker than the above range, the thickness of the light emitting device increases.

The side wall 186 includes an open area 184 therein, and may include a circular or polygonal frame shape in an external shape. The sidewall 186 may have a frame shape around an outer circumference of the open area 184 . The open area 184 may have a circular shape or a polygonal shape. As shown in FIG. 2 , the open area 184 may have a shape corresponding to, for example, the same shape as the top surface of the first cavity 115 , but is not limited thereto. The sidewall 186 may be formed to surround the side surface of the resin layer 185 . The sidewall 186 may be formed in a structure surrounding an outer circumference of the resin layer 185 .

The length D5 of the open area 184 of the side wall 186 may be equal to or longer than the upper length D3 of the second cavity 117 of FIG. 1 . The lower surface area of the open area 184 may be the same area as the upper surface or the light exit surface of the first light-transmissive resin layer 161 of FIG. 2 or may be larger. The lower surface area of the open area 184 may be equal to or smaller than the upper surface area, but is not limited thereto.

The sidewall 186 may be made of a reflective material. The sidewall 186 may include a glass material, for example, white glass or a glass material having high reflectivity. The white glass or glass material having high reflectance may be formed by adding white particles or/and air bubbles to transparent glass. The reflectance of the sidewall 186 may be higher than that of the transparent films 187 and 188 .

As another example, the sidewall 186 includes a resin material, and the resin material may include a resin material such as polyphthalamide (PPA), an epoxy material, or a silicone material. A metal oxide such as TiO ₂ or SiO ₂ or a white particle filler may be added to the resin material. The side wall 186 may be made of white resin. The sidewall 186 may include a ceramic material. The sidewall 186 may be formed in a dark or black color to improve contrast, but is not limited thereto. When the sidewall 186 is made of a reflective material, incident light may be reflected. A fine concavo-convex pattern may be formed on the inner surface of the sidewall 186, but is not limited thereto.

As another example, the sidewall 186 may be made of a translucent material, for example, a transparent glass material or a transparent resin material. The sidewall 186 may be made of a resin material such as silicone or epoxy.

When the sidewall 186 is made of a translucent material, incident light may be emitted through the sidewall. As another example, a reflective layer made of metal may be further disposed on an inner surface or an inner surface/lower surface of the sidewall 186, and the reflective layer may effectively reflect incident light. In this case, the material of the sidewall 186 may be a light-transmitting material or a reflective material.

At least one of the inner side and the outer side of the side wall 186 may be formed as a vertical or inclined surface, but is not limited thereto. An inner surface of the sidewall 186 , for example, a surface in contact with the resin layer 185 may be vertically or inclinedly disposed with respect to the lower surface of the first transparent film 187 . When the inner side of the side wall 186 is inclined, the width or area of the upper surface of the resin layer 185 may be greater than the width or area of the lower surface of the resin layer 185 .

In the resin layer 185, a phosphor may be added in a resin material such as transparent silicone or epoxy. The resin layer 185 excites the excitation wavelength and converts the wavelength. The resin layer 185 may include at least one or different types of red, green, yellow, and blue phosphors. The phosphor excites a part of the emitted light to emit light of a different wavelength. The phosphor may be the phosphor disclosed in the examples.

Transparent films 187 and 188 may be disposed on at least one or both of below and above the resin layer 185 . The transparent films 187 and 188 may include, for example, a first transparent film 187 disposed below the resin layer 185 and a second transparent film 188 disposed above the resin layer 185 . The transparent films 187 and 188 may be disposed on an incident surface or/and an exit surface of the resin layer 185 .

5 or 6, any one of the first and second transparent films 187 and 188 may be removed from the upper or lower surface of the phosphor layer 180, for example, as shown in FIG. 5, the first transparent film 187 may be removed, or the second transparent film 188 may be removed as shown in FIG. 6, but is not limited thereto. When the phosphor layer 180 is manufactured, one of the transparent films 187 and 188 may serve as a base film supported during the dispensing process of the resin layer 185 .

The first and second transparent films 187 and 188 may include glass or a transparent resin film. The first and second transparent films 187 and 188 are adhered to the sidewall 186 to protect the resin layer 185 . The first and second transparent films 187 and 188 may be formed of a material having a refractive index equal to or lower than that of the molding member 181 . The first and second transparent films 187 and 188 may be formed of a material having a difference in refractive index of the first light-transmitting resin layer 161 of 0.2 or less. The first and second transparent films 187 and 188 may have a refractive index lower than that of the second light-transmitting resin layer 163 and the resin layer 185 . As another example, in FIG. 2 , when the second light-transmitting resin layer 163 is removed, an air gap may exist in the second cavity 117, and the first transparent film ( 187) may be placed.

The first transparent film 187 may be attached to a lower surface of the sidewall 186 and a lower surface of the resin layer 185 . The second transparent film 188 may be attached to the upper surface of the sidewall 186 and the upper surface of the resin layer 185 . A lower surface of the phosphor layer 180 may be adhered onto the second light-transmitting resin layer 163 . A lower surface of the first transparent film 187 may be adhered to a surface of the second light-transmitting resin layer 163 . Since the first transparent film 187 is bonded before the second light-transmitting resin layer 163 is cured, light loss at the interface between the first transparent film 187 and the second light-transmitting resin layer 163 is reduced. can reduce

The first and second transparent films 187 and 188 may have a thickness of 0.05 mm or more and 0.3 mm or less, for example, in the range of 0.08 mm to 0.2 mm. When the thickness of the first and second transparent films 187 and 188 is less than 0.05 mm, handling is difficult and a problem may occur in rigidity. When the thickness exceeds 0.2 mm, the thickness of the phosphor layer 180 becomes thick, Light transmittance may decrease.

The thickness of the resin layer 185 may be thicker than the thickness of the first transparent film 187 or the second transparent film 188 and thicker than the sum of the thicknesses of the first and second transparent films 187 and 188 . The resin layer 185 may have the same thickness as the thickness of the sidewall 186, and in this case, the first and second transparent films 187 and 188 may be formed on some or all areas of the upper and lower surfaces of the sidewall 186. can be contacted.

As another example, the resin layer 185 may have a thickness smaller than that of the sidewall 186 . The top surface of the resin layer 185 may be flat, convex, or concave. This sidewall 186 may protrude to the outer circumference of the first and second transparent films 187 and 188, but is not limited thereto.

In the manufacturing process of the phosphor layer 180 disclosed in FIG. 4, the sidewall 186 is formed on the first transparent film 187, and then the resin layer 185 is formed in the open area 184 of the sidewall 186. will dispense. Then, before the resin layer 185 is cured, a second transparent film 188 is laminated on the resin layer 185 and the sidewall 187, and then cut into a predetermined size to form a phosphor layer 180 having a desired size. can provide

In addition, the process of attaching the phosphor layer 180 on the light emitting device is a first step after molding the second light-transmitting resin layer 163 in the light-emitting device 100 and before curing the second light-transmitting resin layer 163. A transparent film 187 may be attached on the second light-transmitting resin layer 163 .

7 is another example of the light emitting device of FIG. 2 . In describing FIG. 7 , the description of the above embodiment will be referred to for the same parts as the configuration of the above-disclosed embodiment.

Referring to FIG. 7, the light emitting device includes a plurality of cavities 115 and 117 in a body 110, light emitting chips 151 and 153 disposed in each of the plurality of cavities 115 and 117, and a light-transmitting resin layer ( 161 and 163), the phosphor layer 180 is disposed on the second light emitting chip 153 emitting relatively long wavelengths among the plurality of light emitting chips 151 and 153, and the first light emitting chip emitting relatively short wavelengths ( 151), a light-transmitting layer 170 may be disposed.

The phosphor layer 180 and the first and second light emitting chips 151 and 153 will be referred to the description of the embodiment above. The light-transmitting layer 170 is disposed on the first cavity 115 and may overlap the first light-emitting chip 151 in a vertical direction. The light-transmitting layer 170 may be filled with a transparent resin material in a transparent capillary tube or made of a transparent glass material, but is not limited thereto.

The thickness of the light-transmitting layer 170 may be the same as or thinner than the thickness of the phosphor layer 180 . Since the light-transmitting layer 170 and the phosphor layer 180 are horizontally disposed on the light-emitting device, the surface of the light-emitting device can be provided as a horizontal surface.

8 is another example showing a light emitting device according to an embodiment. In describing FIG. 8 , the same configuration as the configuration disclosed above will refer to the above description.

Referring to FIG. 8, the light emitting device 100 is electrically connected to a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and the plurality of lead frames 121, 131, and 141, and is different from each other. The light emitting chips 151 and 153 emitting peak wavelength lights L1 and L2, the light-transmissive resin layers 161 and 163 covering the light emitting chips 151 and 153, respectively, and the light emitting chips 151 and 153 having relatively longer wavelengths (L2). ) and a phosphor layer 180 disposed on the light emitting chip 153 emitting light.

A phosphor layer 180 may be disposed in the second cavity 117 of the body 110, and a second light-transmissive resin layer 163 may be disposed between the phosphor layer 180 and the second light emitting chip 153. there is.

A stepped structure 114A is disposed in the second cavity 117 of the body 110, and the stepped structure 114A may have a depth lower than that of the upper surface of the body 110 and may be disposed in a stepped shape. The stepped structure 114A may be disposed closer to the upper surface 119 of the body 110 than to the bottom of the second cavity 117 . The phosphor layer 180 may be attached to the surface of the stepped structure 114A with an adhesive, but is not limited thereto. The adhesive may be made of silicone or epoxy, or may be made of the same material as the second light-transmitting resin layer 163 .

An outer circumference of the phosphor layer 180 may be disposed on the stepped structure 114A. The upper surface of the phosphor layer 180 may be disposed equal to or lower than the upper surface 119 of the body 110. In this case, the upper surface of the phosphor layer 180 is higher than the upper surface 119 of the body 110. Since it does not protrude, light leakage due to the side surface of the phosphor layer 180 can be prevented.

As another example, the upper surface of the phosphor layer 180 may protrude beyond the upper surface 119 of the body 110. In this case, the height of the second light-transmitting resin layer 163 can be secured, and the wire 157 ) can be improved, and the beam angle distribution of light through the phosphor layer 180 can be improved.

Since the phosphor layer 180 is disposed on the stepped structure 114A of the second cavity 117, the barrier portion 114 between the first cavity 115 and the second cavity 117 has a top surface width It may be reduced compared to the structure of FIG. 2 . Accordingly, the length of the light emitting device may be reduced.

9 is a side cross-sectional view showing a light emitting device according to a second embodiment. In describing FIG. 9 , the description of the above-described embodiment will be referred to for the same configuration as that of the above-described embodiment.

Referring to FIG. 9, the light emitting element is electrically connected to a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and the plurality of lead frames 121, 131, and 141, and has different peak wavelengths. Light-emitting chips 151 and 153 emitting light L1 and L2, a first light-transmitting resin layer 161 covering the first light-emitting chip 151 among the light-emitting chips 151 and 153, and the second light-emitting chip 153 It may include a second light-transmitting resin layer 163A having a phosphor covering the .

A first light-transmitting resin layer 161 may be disposed in the first cavity 115 , and a second light-transmitting resin layer 163A may be disposed in the second cavity 117 . The second light-transmitting resin layer 163A may include a phosphor according to an embodiment. Since the second light-transmitting resin layer 163A having a phosphor is disposed on the second light emitting chip 153, it may not be necessary to separately dispose a phosphor layer on the body 110.

The second light-transmitting resin layer 163A may be a single layer or a multi-layer, and in the case of a single layer, may be a layer having a phosphor, and in the case of a multi-layer, at least one first resin layer and a second number having a phosphor on the first resin layer. It may include a layered structure of strata. The at least one first resin layer may be a layer that does not contain a phosphor.

The second light-transmitting resin layer 163A having the phosphor may be disposed on the second light-emitting chip 153 emitting a relatively long wavelength among the plurality of light-emitting chips 151 and 153 . In the light emitting device according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, color reproducibility can be improved by using relatively short wavelength blue light. In addition, by using the long-wavelength second light L2 emitted from the second light emitting chip 153 as an excitation wavelength of the second light emitting resin layer 163A having a phosphor, the lifespan of the second light emitting chip 153 is improved. can give

10 is a side cross-sectional view showing a light emitting device according to a third embodiment. In describing FIG. 10 , the same configuration as the above-described embodiment will be referred to the description of the above-described embodiment.

Referring to FIG. 10, the light emitting element is electrically connected to a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and at least two of the plurality of lead frames 121, 131, and 141, and is connected to each other. Light emitting chips 151A and 153A emitting light L1 and L2 of different peak wavelengths, light-transmissive resin layers 161 and 163 covering each of the light emitting chips 151A and 153A, and the plurality of light emitting chips 151A and 153A. ) may include a phosphor layer 180A disposed on the second light emitting chip 153 emitting light of a relatively long wavelength. For the structure of the light emitting chips L1 and L2 emitted from the first and second light emitting chips 151A and 153A and the phosphor layer 180A, refer to the description of the light emitting chips 151 and 153 and the phosphor layer 180 of FIG. 2 . I'm going to do it.

At least one or both of the first and second light emitting chips 151A and 153A may be disposed in a flip chip method. The first light emitting chip 151A may be disposed on the first frame part 132 of the first lead frame 121 and the second lead frame 131 in a flip chip type, and may be electrically connected to each other. The second light emitting chip 153A may be disposed on the second frame portion 134 of the second lead frame 131 and the third lead frame 141 in a flip chip type and electrically connected to each other. The first and second light-emitting chips 151A and 153A may be a light-transmitting substrate or a semiconductor layer on top, but are not limited thereto.

The phosphor layer 180A may be disposed in the second cavity 117 . The phosphor layer 180A may be disposed in the second light-transmitting resin layer 163 . The phosphor layer 180A may contact the second light emitting chip 153A. The phosphor layer 180A may contact the upper surface of the second light emitting chip 153A, and the phosphor therein may be the phosphor described above, but is not limited thereto. The phosphor layer 180A may have a larger area than the upper surface area of the second light emitting chip 153, but is not limited thereto.

The phosphor layer 180A may be disposed on a second light emitting chip 153A emitting a relatively long wavelength among the plurality of light emitting chips 151 and 153 . In the light emitting device according to the embodiment, since the first light L1 emitted from the first light emitting chip 151A is emitted without wavelength conversion, color reproducibility can be improved by relatively short-wavelength blue light. In addition, by using the long-wavelength second light L2 emitted from the second light emitting chip 153A as the excitation wavelength of the phosphor layer 180A, the lifespan of the second light emitting chip 153A can be improved.

11 is a side cross-sectional view showing a light emitting device according to a fourth embodiment. In describing FIG. 11 , the description of the above-described embodiment will be referred to for the same configuration as that of the above-described embodiment.

Referring to FIG. 11, the light emitting element is electrically connected to a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and the plurality of lead frames 121, 131, and 141, and has different peak wavelengths. The light-emitting chips 151 and 153 emitting light L1 and L2, the light-transmitting resin layers 161 and 163 covering the light-emitting chips 151 and 153, respectively, and the light of a relatively long wavelength among the plurality of light-emitting chips 1511 and 53. A phosphor layer 180B disposed around the second light emitting chip 153 that emits light may be included. The structure of the light emitting chips L1 and L2 emitted from the first and second light emitting chips 151 and 153 and the phosphor layer 180B is described with reference to the description of the light emitting chips 151 and 153 and the phosphor layer 180 of FIG. 2 . do.

The phosphor layer 180B may be disposed in the second cavity 117 . The phosphor layer 180B may be disposed in the second light-transmitting resin layer 163 . The phosphor layer 180B may be disposed around the second light emitting chip 153 emitting light of a relatively long wavelength among the plurality of light emitting chips 151 and 153 . The phosphor layer 180B is disposed on the circumferential surface 117A of the second cavity 117 to convert a portion of the second light L2 emitted from the second light emitting chip 153 into a wavelength. The phosphor layer 180B may be disposed on a part or the entire area of the circumferential surface 117A of the second cavity 117 . A lower portion of the phosphor layer 180B may contact or be spaced apart from the second frame portion 134 and the third lead frame 141 of the second lead frame 131 .

In the light emitting device according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, color reproducibility can be improved by using relatively short wavelength blue light. In addition, by using the long-wavelength second light L2 emitted from the second light emitting chip 153 as an excitation wavelength of the phosphor layer 180B, the lifespan of the second light emitting chip 153 can be improved.

12 is a side cross-sectional view showing a light emitting device according to a fourth embodiment. In describing FIG. 12 , the description of the above-described embodiment will be referred to for the same configuration as that of the above-described embodiment.

Referring to FIG. 12, the light emitting element is electrically connected to a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and the plurality of lead frames 121, 131, and 141, and has different peak wavelengths. Light-emitting chips 151 and 153 emitting light L1 and L2, light-transmissive resin layers 161 and 163 covering each of the light-emitting chips 151 and 153, and light-emitting chips 151 and 153 that emit light of a relatively long wavelength. A phosphor layer 180 disposed on the light emitting chip 153 may be included.

The light emitting device according to the embodiment may include an optical filter 190 on the phosphor layer 180 . The optical filter 190 reflects the peak wavelength of the second light L2 emitted from the second light emitting chip 153 and passes only the wavelength-converted light. Accordingly, the light emitted through the optical filter 190 may be the third light L3 whose wavelength is converted by the phosphor layer 180 . Such a light emitting device may provide a mixed spectrum of the first light L1 emitted from the first light emitting chip 151 and the third light L3 emitted by the phosphor layer 180 . Accordingly, the blue wavelength can be implemented with only the peak wavelength of the short wavelength (λ1 in FIG. 19) emitted from the first light emitting chip 151 while removing the peak wavelength of the second light, thereby further improving color purity and color reproducibility. there is.

13 is a side cross-sectional view showing a light emitting device according to a fifth embodiment. In describing FIG. 13 , the description of the above-described embodiment will be referred to for the same configuration as that of the above-described embodiment.

Referring to FIG. 13, the light emitting element is electrically connected to a body 210, a plurality of lead frames 221, 225, 231, 235 disposed on the body 210, and the plurality of lead frames 221, 225, 231, 235, and has different peak wavelengths. Light-emitting chips 151 and 153 emitting light L1 and L2, light-transmissive resin layers 161 and 163 covering each of the light-emitting chips 151 and 153, and light L2 having a relatively longer wavelength among the plurality of light-emitting chips 151 and 153 It may include a phosphor layer 180 disposed on the second light emitting chip 153 emitting light. The structure of the light L1 and L2 emitted from the first and second light emitting chips 151 and 153 and the phosphor layer 180 will be described with reference to FIG. 2 .

The body 210 may be implemented with a ceramic material, thereby improving heat dissipation efficiency of the light emitting device. The ceramic material includes co-fired low temperature co-fired ceramic (LTCC) or high temperature co-fired ceramic (HTCC). The material of the body 210 may be, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , or AlN, and the thermal conductivity is 140 W/ It can be formed from metal nitrides with mK or higher.

The body 210 may include first and second cavities 215 and 217, and side surfaces of the first and second cavities 215 and 217 may be vertical, inclined, or stepped. At least two lead frames may be disposed in the first and second cavities 215 and 217 . The first light emitting chip 151 according to the embodiment and the first light-transmitting resin layer 161 are disposed in the first cavity 215, and the second light emitting chip 153 according to the embodiment is disposed in the second cavity 217. ) and the second light-transmitting resin layer 163 may be disposed.

The body 210 includes a reflection part 213 having first and second cavities 215 and 217 and a support part 211 supporting the reflection part 213 . A region between the first and second cavities 215 and 217 may include a barrier part 214 .

The first light emitting chip 151 may be disposed on at least one of the first and second lead frames 221 and 225 and may be connected to the first and second lead frames 221 and 225 through a wire 155. The second light emitting chip 153 may be disposed on at least one of the third and fourth lead frames 231 and 235 and may be connected to the third and fourth lead frames 231 and 235 through a wire 157. As another example, the first and second light emitting chips 151 and 153 may be arranged in a flip chip method, but are not limited thereto.

A plurality of connection electrodes 222 , 227 , 232 , and 237 may be disposed in the body 210 , and a plurality of lead electrodes 223 , 226 , 233 , and 236 may be disposed on a lower surface of the body 210 . The connection electrodes 222, 227, 232, and 237 include first to fourth connection electrodes 222, 227, 232, and 237 disposed at different positions, and the lead electrodes 223, 226, 233, and 236 include first to fourth lead electrodes 223, 226, 233, and 236 disposed at different positions. can include

The first lead frame 221 disposed in the first cavity 215 is connected to the first lead electrode 223 through the first connection electrode 222, and the second lead frame 225 is connected to the second connection electrode. It may be connected to the second lead electrode 226 through 227. The third lead frame 231 disposed in the second cavity 217 is connected to the third lead electrode 233 through the third connection electrode 232, and the fourth lead frame 235 is connected to the fourth connection electrode. It may be connected to the fourth lead electrode 236 through 237. The first and second light emitting chips 151 and 153 may be connected in parallel or in series, but are not limited thereto.

Here, the second and third lead frames 225 and 231 may be one lead frame or may be connected to each other. Alternatively, the second and third lead electrodes 226 and 233 may be one lead electrode or connected to each other, but is not limited thereto. The first and second light emitting chips 151 and 153 may be connected in series to each other.

The phosphor layer 180 may be disposed on the second light emitting chip 153 emitting light L2 of a relatively long wavelength within a blue wavelength range. The phosphor layer 180 may be disposed on the second cavity 217 and the second light-transmitting resin layer 163 . In the light emitting device according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, color reproducibility can be improved by using relatively short wavelength blue light. In addition, by using the long-wavelength second light L2 emitted from the second light-emitting chip 153 as the excitation wavelength of the phosphor layer 180, the lifespan of the second light-emitting chip 153 can be improved.

14 is a view illustrating a light unit having a light emitting device according to an embodiment. A light unit according to an embodiment may be a light emitting module, but is not limited thereto.

Referring to FIG. 14 , in the light unit, one or a plurality of light emitting devices 100 may be disposed on a circuit board 310 . The light emitting device 100 may include a light emitting device according to an embodiment. The light emitting device 100 is disposed on the circuit board 310 and may be electrically connected to a circuit pattern of the circuit board 310 .

The circuit board 310 may be a printed circuit board (PCB) including a circuit pattern. However, the circuit board may include a PCB made of resin, a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like, but is not limited thereto.

The light emitting devices 100 may be arranged in rows or/and columns on the circuit board 310, but is not limited thereto. In the light unit according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 on the circuit board 310 is emitted without wavelength conversion, color reproducibility is improved by relatively short wavelength blue light. can give In addition, by using the long-wavelength second light L2 emitted from the second light-emitting chip 153 as the excitation wavelength of the phosphor layer 180, the lifespan of the second light-emitting chip 153 can be improved.

15 is a view showing another example of a light unit having a light emitting device according to an embodiment. A light unit according to an embodiment may be a light emitting module, but is not limited thereto.

Referring to FIG. 15 , in the light unit, a plurality of light emitting elements 101 and 103 may be disposed on a circuit board 310, and the plurality of light emitting elements 101 may be disposed adjacent to each other with a predetermined interval G1. can The distance G1 between the plurality of light emitting devices 101 and 103 may be spaced within a distance at which the light rays L1 , L2 , and L3 emitted from the light emitting devices 101 and 103 may mix with each other.

The light unit includes a first light emitting element 101 having a first light emitting chip 151 emitting a peak wavelength of the first light L1 disclosed in the embodiment, and a peak of the second light L2 disclosed in the embodiment. The second light emitting devices 103 having second light emitting chips 153 emitting wavelengths may be disposed in a form separated from each other. The light emission areas of the first and second light emitting devices 101 and 103 may be defined as one lighting area.

The first light emitting device 101 emits first light L1 of short wavelength from the first light emitting chip 151 disposed in the first cavity 115 of the body 110, and Inside, a plurality of lead frames 121 and 141 may be connected to the first light emitting chip 151 . In the second light emitting device 103, long wavelength second light L2 is emitted from the second light emitting chip 153 disposed in the second cavity 117 of the body 110, and the second light L2 is emitted from the second cavity 117. Inside, a plurality of lead frames 121 and 143 may be connected to the second light emitting chip 153 .

A phosphor layer 180 may be disposed on the second light emitting chip 153 . The phosphor layer 180 may include a phosphor according to an embodiment. The first and second light-emitting chips 151 and 153 can emit blue light, and the second light-emitting chip 153 has a wavelength longer than the peak wavelength of the first light L1 emitted from the first light-emitting chip 151. A second light L2 may be emitted. Descriptions of the first and second light emitting chips 151 and 153 and the phosphor layer 180 will be referred to in the embodiments.

Since the light unit according to the embodiment emits the first light L1 emitted from the first light emitting chip 151 of the light emitting element 101 on the circuit board 310 without converting the wavelength, relatively short wavelength blue light is emitted. color reproducibility can be improved. In addition, the second light-emitting element 103 uses the long-wavelength second light L2 emitted from the second light-emitting chip 153 as an excitation wavelength of the phosphor layer 180, thereby shortening the lifespan of the second light-emitting chip 153. can improve

16 is a diagram illustrating another example of a light unit having light emitting chips according to an embodiment. A light unit according to an embodiment may be a light emitting module, but is not limited thereto.

Referring to FIG. 16, the light unit has a plurality of light emitting chips 151 and 153 disposed on a circuit board 330, and among the plurality of light emitting chips 151 and 153, the light emitting chip 153 emitting light of a relatively long wavelength A phosphor layer 180 may be disposed thereon. For the first light emitting chip 151, the second light emitting chip 153, and the phosphor layer 180, the structure disclosed in the embodiment will be referred to.

A reflector 335 is disposed on the circuit board 330 , and the reflector 335 may be disposed outside the first light emitting chip 151 and the second light emitting chip 153 . A sidewall portion 334 is disposed between the first and second light emitting chips 151 and 153, and the sidewall portion 334 may be formed of the same material as that of the reflector 335. The reflector 335 may be a white resin material or a solder resist material, but is not limited thereto.

The first light-emitting chip 151 is molded into a first light-transmitting resin layer 361 disposed in a first cavity 315, and the second light-emitting chip 153 is a second light-transmitting resin layer in a second cavity 317. It can be molded into the stratum 363 . The first and second light-transmitting resin layers 361 and 363 may include a resin material such as silicone or epoxy. The phosphor layer 180 is disposed on the second light-transmitting resin layer 363 to convert light emitted from the second light emitting chip 153 . In the light unit according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, color reproducibility can be improved by using relatively short wavelength blue light. In addition, by using the long-wavelength second light L2 emitted from the second light-emitting chip 153 as the excitation wavelength of the phosphor layer 180, the lifespan of the second light-emitting chip 153 can be improved.

17 is a diagram illustrating an example of a light emitting device or a light emitting chip of a light unit according to an embodiment.

Referring to FIG. 17 , the light emitting chips 151 and 153 include a first conductive semiconductor layer 41 , an active layer 50 disposed on the first conductive semiconductor layer 41 , and an active layer 50 formed on the active layer 50 . An electron blocking layer 71 disposed thereon and a second conductivity type semiconductor layer 75 disposed on the electron blocking layer 71 may be included.

The light emitting chips 151 and 153 may include at least one or both of the buffer layer 31 and the substrate 21 under the first conductive type semiconductor layer 41 . The light emitting chips 151 and 153 are provided between the first cladding layer 43 between the first conductive semiconductor layer 41 and the active layer 50 and between the active layer 50 and the second conductive semiconductor layer 75. It may include at least one or both of the two cladding layers (not shown).

The substrate 21 may be, for example, a light-transmissive or conductive substrate or an insulating substrate. For example, the substrate 21 may include at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ . A plurality of protrusions (not shown) may be formed on the upper and / or lower surfaces of the substrate 21, and each of the plurality of protrusions has a side cross section having at least one of a hemispherical shape, a polygonal shape, and an elliptical shape, It can be arranged in a stripe form or matrix form. The protrusion may improve light extraction efficiency. A plurality of compound semiconductor layers may be disposed on the substrate 21, and equipment for growing the plurality of compound semiconductor layers is an electron beam evaporator, PVD (physical vapor deposition), CVD (chemical vapor deposition), PLD (plasma laser deposition) , dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), or the like, but is not limited thereto.

The buffer layer 31 may be disposed between the substrate 21 and the first conductive type semiconductor layer 41 . The buffer layer 31 may be formed of at least one layer using Group II to Group VI compound semiconductors. The buffer layer 31 includes a semiconductor layer using a group III-V compound semiconductor, for example, In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y ≤ 1) may be implemented as a semiconductor material having a composition formula. The buffer layer 31 may include, for example, at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and ZnO, and may be formed as a single layer or multiple layers. there is. The buffer layer 31 may include a super lattice structure in which different semiconductor layers are alternately disposed. The buffer layer 31 may be formed to alleviate a difference in lattice constant between the substrate 21 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The lattice constant of the buffer layer 31 may have a value between the lattice constant between the substrate 21 and the nitride-based semiconductor layer. The buffer layer 31 may include an undoped semiconductor layer, and the undoped semiconductor layer may have lower electrical conductivity than the first conductive semiconductor layer 41 . The undoped semiconductor layer has first conductivity type characteristics even if it is not intentionally doped with a conductivity type dopant. The buffer layer 31 may be formed of a single layer or multiple layers.

The first conductive semiconductor layer 41 may be disposed between at least one of the substrate 21 and the buffer layer 31 and the active layer 50 . The first conductive semiconductor layer 41 may be implemented with at least one of group III-V and II-VI compound semiconductors doped with a first conductive dopant. The first conductive semiconductor layer 41 is, for example, a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) can be formed The first conductive semiconductor layer 41 may include, for example, at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The first conductive semiconductor layer 41 may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The first conductive type semiconductor layer 41 may be disposed in a single layer or multiple layers. The first conductivity-type semiconductor layer 41 may have a superlattice structure in which at least two different layers are alternately disposed. The first conductive semiconductor layer 41 may be an electrode contact layer.

The first cladding layer 43 may include at least one of group II-VI and group III-V compound semiconductors. The first cladding layer 43 may be an n-type semiconductor layer having a dopant of a first conductivity type, for example, an n-type dopant. The first cladding layer 43 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, and may include Si, Ge, Sn, Se, and Te. It may be an n-type semiconductor layer doped with an n-type dopant such as The first clad layer 43 may be formed in a single layer or multiple layers.

The active layer 50 may be formed of at least one of a single well, a single quantum well, a multi well, a multi quantum well (MQW) structure, a quantum wire structure, or a quantum dot structure. can In the active layer 50, electrons (or holes) injected through the first conductive semiconductor layer 41 and holes (or electrons) injected through the second conductive semiconductor layer 75 meet each other, It is a layer that emits light by a difference in band gap of an energy band according to a forming material of the active layer 50 . The active layer 50 may be implemented as a compound semiconductor. For example, the active layer 50 may be implemented with at least one of group II-VI and group III-V compound semiconductors.

When the active layer 50 is implemented in a multi-well structure, the active layer 50 includes a plurality of well layers and a plurality of barrier layers that are alternately arranged, and pairs of well layers/barrier layers are formed in 2 to 30 cycles. It can be. The period of the well/barrier layer may be, for example, InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, or It includes at least one of InP/GaAs pairs. The well layer may be formed of, for example, a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0<x≤1, 0≤y≤1, 0≤x+y<1). The barrier layer may be formed of, for example, a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y<1). The active layer 50 may emit at least one peak wavelength among UV, blue, green, and red wavelengths. For example, the active layer 50 may provide different peak wavelengths of each light emitting chip according to the composition of indium or aluminum.

The electron blocking layer 71 is disposed on the active layer 50 . The electron blocking layer 71 may include an AlGaN-based semiconductor. The electron blocking layer 71 may be a p-type semiconductor layer having a dopant of the second conductivity type, for example, a p-type dopant. The electron blocking layer 71 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP, and Mg, Zn, Ca, Sr, and Ba. A p-type dopant such as may be included.

A second conductive type semiconductor layer 75 may be disposed on the electron blocking layer 71 . The second conductive semiconductor layer 75 is, for example, a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). can be formed The second conductive semiconductor layer 75 may include, for example, at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP, and a p-type dopant. may be a doped p-type semiconductor layer. The second conductive type semiconductor layer 75 may be disposed in a single layer or multiple layers. The second conductivity-type semiconductor layer 75 may have a superlattice structure in which at least two different layers are alternately disposed. The second conductive semiconductor layer 75 may be an electrode contact layer.

The light emitting structure may include from the first conductivity type semiconductor layer 41 to the second conductivity type semiconductor layer 75 . As another example, in the light emitting structure, the first conductive semiconductor layer 41 and the first cladding layer 43 are p-type semiconductor layers, and the second cladding layer 73 and the second conductive semiconductor layer 75 are n-type semiconductor layers. It can be implemented as a type semiconductor layer. Such a light emitting structure may be implemented with any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The light emitting chips 151 and 153 include a first electrode 91 and a second electrode 95 . A first electrode 91 may be electrically connected to the first conductive semiconductor layer 41 , and a second electrode 95 may be electrically connected to the second conductive semiconductor layer 75 . The first electrode 91 may be disposed on the first conductive semiconductor layer 41 , and the second electrode 95 may be disposed on the second conductive semiconductor layer 75 . The first electrode 91 and the second electrode 95 may further form a current diffusion pattern of an arm structure or a finger structure. The first electrode 91 and the second electrode 95 may be formed of non-light-transmitting metal having characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but are not limited thereto. The first electrode 91 and the second electrode 95 are Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, and Au and their selection. can be selected from among the alloys.

An electrode layer 93 may be disposed between the second electrode 95 and the second conductive type semiconductor layer 75, and the electrode layer 93 is a light-transmitting material that transmits 70% or more of light or 70% or more of light. It may be formed of a material having a reflective property that reflects the light, and may be formed of, for example, a metal or metal oxide. The electrode layer 93 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). ), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, NiO, Al, Ag, Pd, Rh, Pt, and Ir.

An insulating layer 81 may be disposed on the electrode layer 93 . The insulating layer 81 may be disposed on an upper surface of the electrode layer 93 and a side surface of the semiconductor layer, and may selectively contact the first and second electrodes 91 and 95 . The insulating layer 81 includes an insulating material or an insulating resin formed of at least one of oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 81 may be formed selectively from among, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The insulating layer 81 may be formed as a single layer or multiple layers, but is not limited thereto.

FIG. 18 is a view showing an example of a vertical light emitting chip using the light emitting chip of FIG. 17 . In the description of FIG. 18, the description of the embodiment disclosed above will be referred to for the same components as those disclosed in FIG. 17.

Referring to FIG. 18 , light emitting chips 151 and 153 include a plurality of conductive layers 96 , 97 , and 98 under a first electrode 91 on a first conductive semiconductor layer 41 and a second conductive semiconductor layer 75 . ,99).

The second electrode is disposed under the second conductive semiconductor layer 75 and includes a contact layer 96 , a reflective layer 97 , a bonding layer 98 and a support member 99 . The contact layer 96 is in contact with a semiconductor layer, for example, the second conductivity type semiconductor layer 75 . The contact layer 96 may be made of a low conductivity material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO, or a metal such as Ni or Ag. A reflective layer 97 is disposed under the contact layer 96, and the reflective layer 97 is composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and combinations thereof. It can be formed into a structure comprising at least one layer made of a material selected from the group. The reflective layer 97 may contact under the second conductive semiconductor layer 75, but is not limited thereto. A bonding layer 98 is disposed under the reflective layer 97, and the bonding layer 98 may be used as a barrier metal or a bonding metal, and the material may be, for example, Ti, Au, Sn, Ni, Cr, It may include at least one of Ga, In, Bi, Cu, Ag, and Ta and optional alloys.

A channel layer 83 and a current blocking layer 85 are disposed between the second conductive semiconductor layer 75 and the second electrode. The channel layer 83 is formed along the edge of the lower surface of the second conductive semiconductor layer 75 and may be formed in a ring shape, loop shape or frame shape. The channel layer 83 includes a transparent conductive material or an insulating material, for example, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , It may include at least one of Al ₂ O ₃ and TiO ₂ . The inner portion of the channel layer 83 is disposed below the second conductive type semiconductor layer 75, and the outer portion is disposed further outside the side surface of the light emitting structure. The current blocking layer 85 may be disposed between the second conductive type semiconductor layer 75 and the contact layer 96 or the reflective layer 97 . The current blocking layer 85 includes an insulating material, and may include, for example, at least one of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . As another example, the current blocking layer 85 may be formed of a metal for Schottky contact.

The current blocking layer 85 is disposed to correspond to the first electrode 91 disposed on the light emitting structure in the thickness direction of the light emitting structure. The current blocking layer 85 can block the current supplied from the second electrode and spread it to another path. One or a plurality of current blocking layers 85 may be disposed, and at least a portion or an entire area may overlap with the first electrode 91 in a vertical direction.

A support member 99 is formed under the bonding layer 98, and the support member 99 may be formed of a conductive member, the material being copper (Cu-copper), gold (Au-gold), nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), carrier wafer (eg Si, Ge, GaAs, ZnO, SiC, etc.). As another example, the support member 99 may be implemented as a conductive sheet.

Here, the substrate of FIG. 17 may be removed from the first conductive type semiconductor layer 41 for a vertical chip. The method of removing the substrate may be a physical method (eg, laser lift off) or/or a chemical method (wet etching, etc.), and exposes the first conductive type semiconductor layer 41 . Isolation etching is performed in the direction from which the substrate is removed to form a first electrode 91 on the first conductive semiconductor layer 41 . A light extracting structure (not shown) such as roughness may be formed on the upper surface of the first conductive type semiconductor layer 41 . An insulating layer (not shown) may be further disposed on the surface of the semiconductor layer, but is not limited thereto. Accordingly, a light emitting chip having a vertical electrode structure having the first electrode 91 on the light emitting structure and the supporting member 99 below can be manufactured.

Optical members such as a lens, a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light emitting device according to the embodiment. The light unit is embodied in a top view or side view type, and may be provided to a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Another embodiment may be implemented as a lighting device including the light emitting device described in the above-described embodiments. For example, the lighting device may include a lamp, a street light, an electric display board, or a headlamp.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to these combinations and variations should be construed as being included in the scope of the present invention.

In addition, although the above has been described with reference to the embodiments, these are only examples and do not limit the present invention, and those skilled in the art to which the present invention belongs can exemplify the above to the extent that does not deviate from the essential characteristics of the present embodiment. It will be seen that various variations and applications that have not been made are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

100: light emitting element
110: body
115,117,215,217: cavity
121,125,131,135,141,221,225,231,235: lead frame
151: first light emitting chip
153: second light emitting chip
161: first light-transmitting resin layer
163,163A: second light-transmitting resin layer
170: light transmission layer
180, 180A, 180B: phosphor layer
190: optical filter

Claims (19)

A body including a first cavity and a second cavity;
a plurality of light emitting chips having a first light emitting chip disposed in the first cavity and emitting a first light and a second light emitting chip disposed in the second cavity and emitting a second light having a longer wavelength than the first light;
a phosphor layer disposed on the second light emitting chip and emitting a peak wavelength of a third light by exciting a portion of a peak wavelength of the second light; and
A barrier portion disposed between the first cavity and the second cavity,
The phosphor layer is disposed on a different area from the first light emitting chip,
The first light and the second light include light of the same color,
The first light and the second light include blue light,
The difference between the peak wavelengths of the first light and the second light is 10 nm or more,
The first light is emitted without wavelength conversion,
A light-emitting element comprising a light-transmitting resin layer disposed between the phosphor layer and the second light-emitting chip. A body including a first cavity and a second cavity;
a plurality of light emitting chips having different peak wavelengths of light of the same color;
a first light-transmissive resin layer that emits first light of a relatively short wavelength among the plurality of light-emitting chips and is disposed on the first light-emitting chip disposed in the first cavity and emits the first light without wavelength conversion;
a phosphor layer disposed on a second light emitting chip disposed in the second cavity and emitting second light having a relatively long wavelength among the plurality of light emitting chips;
a barrier part disposed between the first cavity and the second cavity; and
A second light-transmitting resin layer disposed between the second light emitting chip and the phosphor layer;
The plurality of light emitting chips are disposed separately from each other,
The first light and the second light include blue light,
A difference between peak wavelengths of the first light and the second light is 10 nm or more. According to claim 1 or 2,
The phosphor layer includes a resin layer having quantum dots, a transparent film disposed on at least one of upper and lower surfaces of the resin layer, and sidewalls disposed around the resin layer. delete According to claim 1,
The phosphor layer is disposed on a circumferential surface of the second cavity,
The phosphor layer emits green and red light. delete delete delete delete delete delete delete delete delete delete delete delete delete delete

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