KR20170061921A - Light emitting device and light unit having thereof - Google Patents

Abstract

The light emitting device disclosed in the embodiment includes: a plurality of light emitting chips each having a first light emitting chip and a second light emitting chip that emit first and second light having different peak wavelengths; And a phosphor layer disposed on the second light emitting chip and exciting a peak wavelength of the second light to emit a peak wavelength of the third light, wherein the phosphor layer is disposed on a different region from the first light emitting chip Wherein the first light and the second light include light of the same color, and the second light includes a longer wavelength than the first light.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device,

An embodiment relates to a light emitting element.

The embodiment relates to a light unit having a light emitting element.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light emitting diodes convert electrical signals into light, such as infrared, visible, and ultraviolet, using the properties of compound semiconductors.

As the light efficiency of a light emitting device increases, a light emitting device is applied to various fields including a display device, a lamp for a vehicle, and various lighting devices.

Embodiments provide a light emitting device in which a phosphor layer is disposed on a light emitting chip that emits a relatively high peak wavelength among light emitting chips emitting different peak wavelengths.

Embodiments provide a light emitting device in which a phosphor layer is disposed on a light emitting chip that emits a relatively high peak wavelength among light emitting chips emitting the same color.

Embodiments provide a light emitting device comprising a body having a barrier portion disposed between light emitting chips emitting different peak wavelengths.

Embodiments provide a light emitting device in which light emitting chips emitting different peak wavelengths are disposed in different cavities, respectively, and a phosphor layer is disposed on a light emitting chip emitting a relatively high peak wavelength.

Embodiments provide a light emitting device having a phosphor layer on a light emitting chip that emits a relatively high peak wavelength, and an optical filter that reflects a relatively high peak wavelength on the phosphor layer, among light emitting chips emitting different peak wavelengths.

A light emitting module and a light unit having a light emitting device according to an embodiment are provided.

A light emitting device according to an embodiment includes: a plurality of light emitting chips each having a first light emitting chip and a second light emitting chip that emit first and second light having different peak wavelengths; And a phosphor layer disposed on the second light emitting chip and exciting a peak wavelength of the second light to emit a peak wavelength of the third light, wherein the phosphor layer is disposed on a different region from the first light emitting chip Wherein the first light and the second light include light of the same color, and the second light includes a longer wavelength than the first light.

A light emitting device according to an embodiment includes: a plurality of light emitting chips having different peak wavelengths of light of the same color; A first light-transmissive resin layer disposed on a first light-emitting chip that emits a first light of a relatively short wavelength among the plurality of light-emitting chips and emits the first light without wavelength conversion; And a phosphor layer disposed on a second light emitting chip that emits a second light having a relatively long wavelength among the plurality of light emitting chips, wherein the plurality of light emitting chips are disposed separately from each other.

The lifetime of the light emitting device according to the embodiment can be improved.

The embodiment can improve the lifetime of the light emitting chip and the phosphor layer which emit different peak wavelengths.

The embodiment can improve the color reproducibility by the light emitted through the relatively short wavelength light emitting chip by disposing the phosphor layer on the light emitting chip which emits relatively long wavelength among the light emitting chips emitting different peak wavelengths.

The embodiment can improve the lifetime of the light emitting chip providing the excitation wavelength to the phosphor layer having quantum dots and the light emitting element having the excitation wavelength.

The reliability of the light emitting module and the light unit having the light emitting device according to the embodiment can be improved.

1 is a plan view showing a light emitting device according to a first embodiment.
Fig. 2 is a cross-sectional view of the light-emitting device of Fig. 1 on the AA side.
Fig. 3 is a view showing an example of the phosphor layer of Fig. 2. Fig.
Fig. 4 is a view showing another example of the phosphor layer of Fig. 2. Fig.
Figs. 5 and 6 are views showing a modification of the phosphor layer of Fig. 2. Fig.
7 is a modification of the light emitting device of Fig.
8 is a modification of the light emitting device of Fig.
9 is a side sectional view showing a light emitting device according to the second embodiment.
10 is a side sectional view showing a light emitting device according to the third embodiment.
11 is a side sectional view showing a light emitting device according to the fourth embodiment.
12 is a side sectional view showing a light emitting device according to a fifth embodiment.
13 is a side sectional view showing a light emitting device according to the sixth embodiment.
14 is a view showing a light unit having a light emitting device according to the embodiment.
15 is a view showing a light unit having a plurality of light emitting elements according to the embodiment.
16 is a view showing a light unit having a light emitting chip according to the seventh embodiment.
17 is a view showing an example of a light emitting chip of a light emitting device or a light unit according to the embodiment.
18 is another example of the light emitting device of the light emitting device or the light unit according to the embodiment.
19 is a diagram showing an example of a wavelength spectrum emitted from a light emitting element in the embodiment.
20 is a diagram showing the life time of the light emitting chip according to the excitation wavelength of the light emitting chip in the embodiment.
21 is a graph showing the excitation efficiency according to the peak wavelength in the embodiment.
22 is a graph showing lifetime in accordance with the output power of the light emitting chip in the embodiment.
Fig. 23 is a graph showing the comparison of the peak wavelength of the light emitting chip and the life time according to the output power in the comparative example. Fig.
Fig. 24 is a diagram showing a comparison of the life time according to the light emitting chip of Fig. 23. Fig.
Fig. 25 is a chart comparing lifetime times according to the output power and the peak wavelength of the light emitting chip in the embodiment. Fig.
26 is a diagram showing the light emitting chip and the output power in the light emitting device according to the embodiment.
FIG. 27 is a view for comparing the life time according to the light emitting chip of FIG. 26;

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

Hereinafter, a light emitting device according to embodiments will be described in detail with reference to the accompanying drawings.

FIG. 1 is a plan view of a light emitting device according to an embodiment, and FIG. 2 is a sectional view taken along the line A-A of the light emitting device of FIG.

1 and 2, a light emitting device 100 according to an embodiment includes a light emitting chip 153 that emits a relatively long wavelength among light emitting chips 151 and 153 that emit different peak wavelengths, and a phosphor layer 180 May be disposed. The phosphor layer 180 may be a film having a constant thickness or a molding member.

The light emitting device 100 according to the embodiment includes a phosphor layer 180 on a light emitting chip 153 having relatively the same color and emitting relatively long wavelengths among the light emitting chips 151 and 153 emitting light having different peak wavelengths .

The light emitting device 100 according to the embodiment may include a phosphor layer 180 having a relatively long excitation wavelength among the light emitting chips 151 and 153 having the same color and emitting light having different peak wavelengths.

The light emitting device 100 according to the embodiment may include a body 110 in which a barrier 114 is disposed between the light emitting chips 151 and 153 that emit light of the same color and different peak wavelengths.

The light emitting device 100 according to the embodiment includes the light emitting chips 153 and 153 emitting light of different peak wavelengths to each other in the different cavities 115 and 117 and on the light emitting chip 153 emitting relatively longer wavelengths The phosphor layer 180 may be disposed.

The light emitting device 100 includes a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and a plurality of lead frames 121, 131, and 141 that are electrically connected to the plurality of lead frames 121, Light emitting chips 151 and 153 for emitting light L1 and L2 emitted from the light emitting chips 151 and 153 and light transmitting resin layers 161 and 163 for covering the light emitting chips 151 and 153, And a phosphor layer 180 disposed on the chip 153.

The body 110 may be formed of a conductive substrate such as silicon, a synthetic resin material such as polyphthalamide (PPA), a ceramic substrate, an insulating substrate such as PLC leaded chip carrier, a metal substrate (e.g., MCPCB- Or a white insulating layer. The body 110 may include a reflective portion 113 having concave cavities 115 and 117 open at the top and a supporting portion 111 for supporting the reflective portion 113. The present invention is not limited thereto. As another example, the body 110 may not include the support portion 111. In this case, a plurality of lead frames 121, 131, and 141 may be disposed on the bottom of the body 110. [

The body 110 may include a plurality of cavities 115 and 117. The cavities 115 and 117 may include a first cavity 115 and a second cavity 117 spaced from the first cavity 115. The first and second cavities 115 and 117 may be formed from a concave structure such as a recess structure or a cup structure from the upper surface 119 of the body 110. The top view of the first and second cavities 115 and 117 may have a polygonal shape, a circular shape, an elliptical shape, or a polygonal shape having a curved edge. Each of the cavities 115 and 117 may be provided in a shape having an upper length (D4 in Fig. 1) wider than a lower length, as viewed from a side cross-section. The circumferential surfaces of the cavities 115 and 117 may be inclined or perpendicular. When the peripheral surfaces of the cavities 115 and 117 have inclined surfaces, they may be formed as inclined surfaces having one or different angles with respect to the bottom of the cavities 115 and 117, but are not limited thereto. Accordingly, the light emitted from the light emitting chips 151 and 153 can be reflected on the peripheral surfaces of the cavities 115 and 117, and the light extraction efficiency can be improved.

1, when the plurality of cavities 115 and 117 are arranged in the longitudinal direction of the light emitting device 100, the length D1 of the body 110 may be wider than the width D2, Or more. As another example, the plurality of cavities 115 and 117 may be disposed in the width direction, but the present invention is not limited thereto.

A barrier 114 may be disposed between the first and second cavities 115 and 117 and the barrier 114 may be made of the same material as the body 110 or other resin material. The barrier 114 may be disposed at the same height as the upper surface of the body 110, or may be disposed at a lower level, but is not limited thereto. The outer surface of the body 110 may be formed with a vertical or inclined shape.

A plurality of lead frames 121, 131, and 141 are disposed on the body 110. The plurality of lead frames 121, 131, and 141 may be disposed at the bottoms of the cavities 115 and 117. At least two of the plurality of lead frames 121, 131, and 141 may be disposed in the respective cavities 115 and 117. For example, first and second lead frames 121 and 131 of the first and second lead frames 121 and 131 are disposed in the first cavity 115, The second frame portion 134 and the third lead frame 141 of the first frame 131 may be disposed.

The second lead frame 131 includes an extension 136 disposed below the barrier 114 and the extension 136 is disposed between the barrier 114 and the support 111 . The extended portion 136 is connected between the first and second frame portions 132 and 134 and may extend from the first and second cavities 115 and 117 to the inside of the body 110.

The first lead part 123 extending from one side of the body 110 of the first lead frame 121 may be disposed on a lower surface of the body 110. The second lead portion 143 extending from the other side of the body 110 of the third lead frame 141 may be disposed on the lower surface of the body 110.

The first lead portion 123 of the first lead frame 121 and the second lead portion 143 of the third lead frame 141 may be bonded to the circuit board or may be supplied with external power.

The first to third lead frames 121, 131 and 141 may be made of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, And may include at least one of platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P). In addition, the first to third lead frames 121, 131, and 141 may have a single-layer structure or a multi-layer structure, but the present invention is not limited thereto. A separate reflective layer may be formed on the surfaces of the first through third lead frames 121, 131, and 141, but the present invention is not limited thereto.

The light emitting device 100 according to the embodiment may include a plurality of light emitting chips 151 and 153, and the plurality of light emitting chips 151 and 153 may be two or more. The plurality of light emitting chips 151 and 153 may include a first light emitting chip 151 having one or more light emitting chips 151 arranged in the first cavity 115 and one or more light emitting chips 151 arranged in the second cavity 117 2 light emitting chip 153 as shown in FIG.

The first and second light emitting chips 151 and 153 may emit different peak wavelengths. The first and second light emitting chips 151 and 153 may emit at least one of ultraviolet light, blue light, green light, and red light, and may emit light having a short wavelength such as ultraviolet light or blue light. The first and second light emitting chips 151 and 153 may have the same color and emit different peak wavelengths. The first light emitting chip 151 can emit light having a shorter wavelength near ultraviolet than the peak wavelength of the second light emitting chip 153. On the contrary, the second light emitting chip 153 may emit light having a longer wavelength than the peak wavelength of the first light emitting chip 151. Embodiments can improve the color reproducibility in a light unit such as a display by providing the first and second light emitting chips 151 and 153 with a short wavelength of the first light emitting chip 151 without wavelength conversion.

The first and second light emitting chips 151 and 153 may emit blue light, for example, a peak wavelength in the range of 430 nm to 470 nm. The first light emitting chip 151 may emit a peak wavelength in the range of 440 nm to 450 nm, for example, 455 nm or less. If the first light emitting chip 151 is out of the blue light range of the first light emitting chip 151, color reproducibility may be degraded. The second light emitting chip 153 may emit a peak wavelength in a range of more than 455 nm, for example, in a range of 460 nm to 470 nm. When the range of the blue light of the second light emitting chip 153 is lower than the above range, 2 lifetime of the light emitting chip 153 is deteriorated, and when it is higher than the above range, the excitation efficiency is lowered. The difference of the peak wavelengths of the first and second light emitting chips 151 and 153 may be in the range of 5 nm or more, for example, 10 nm to 30 nm. If the difference of the peak wavelength is out of the above range, May be insignificant.

The first light emitting chip 151 may be disposed on the first frame portion 132 or the first lead frame 121 of the second lead frame 131 in the first cavity 115. The first light emitting chip 151 may be adhered to the first frame part 132 of the second lead frame 131 with an adhesive and the first lead frame 121 and the second lead frame 131 may be adhered to each other. May be connected to the first frame portion 132 of the first frame 131 by a wire 155. The first light emitting chip 151 may be connected to the first and second lead frames 121 and 131 by a wire 155 or a flip chip method in case of a horizontal chip, And may be electrically connected to the first frame portion 132 by a conductive adhesive agent and connected to the first lead frame 121 by a wire 155.

The second light emitting chip 153 may be disposed on the third lead frame 141 or the second lead frame 131 in the second cavity 117. The second light emitting chip 153 may be adhered to the third lead frame 141 with an adhesive agent and may be bonded to the second frame portion 134 of the second lead frame 131, (Not shown). When the second light emitting chip 153 is a horizontal chip, the second light emitting chip 153 may be connected to the other lead frames 131 and 141 with wires 157 or in a flip chip manner. When the second light emitting chip 153 is a vertical chip, the vertical chip is electrically connected to the third lead frame 141 by a conductive adhesive and electrically connected to the second frame portion 134 of the second lead frame 131, May be connected by a wire (157).

The first frame portion 132 and the second frame portion 134 of the second lead frame 131 may be connected to each other or may be electrically separated frames. Further, the first and second light emitting chips 151 and 153 may be connected in series or connected in parallel, but the present invention is not limited thereto.

The light transmitting resin layers 161 and 163 include a first light transmitting resin layer 161 disposed in the first cavity 115 and a second light transmitting resin layer 163 disposed in the second cavity 117. The first light transmitting resin layer 161 may be disposed on the surface of the first light emitting chip 151 to protect the first light emitting chip 151. The second light transmitting resin layer 163 may be disposed on the surface of the second light emitting chip 153 to protect the second light emitting chip 153.

The light-transmitting resin layers 161 and 163 may include a resin material such as silicon or epoxy. The light transmitting resin layers 161 and 163 may have a refractive index lower than that of the semiconductor material constituting the light emitting chips 151 and 153. The light-transmitting resin layers 161 and 163 may be, for example, a resin layer having no wavelength converting element such as a fluorescent material therein. The light transmitting resin layers 161 and 163 may be separated from each other by the barrier 114. The light transmitting resin layers 161 and 163 may be flat, concave, or convex on the upper surface. An optical lens may be disposed on one or both of the light-transmissive resin layers 161 and 163, and the optical lens may include a concave shape, a convex shape, or a shape having a full reflection surface with respect to the light emitting element.

The phosphor layer 180 may be disposed on the second cavity 115. 1, the phosphor layer 180 has a length D3 and a width greater than an upper length D4 and a width of the second cavity 117 to cover the area of the second cavity 117 .

The phosphor layer 180 may be disposed on a chip, for example, a second light emitting chip 153, which emits a peak wavelength of a long wavelength among the first and second light emitting chips 151 and 153. The phosphor layer 180 may be spaced apart from the chip, for example, the first light emitting chip 151, which emits a peak wavelength of a relatively short wavelength among the first and second light emitting chips 151 and 153. The phosphor layer 180 overlaps with the second translucent resin layer 163 in a direction perpendicular to the first translucent resin layer 163 so that light incident through the second translucent resin layer 163 can be wavelength-converted. The phosphor layer 180 may be disposed in a region that does not overlap the first light transmitting resin layer 161 in the vertical direction. The phosphor layer 180 may be disposed on a different region from the first light emitting chip 151. The phosphor layer 180 may be disposed on the upper surface 119 of the body 110 and the upper surface of the barrier 114. The outer surface of the lower surface of the phosphor layer 180 may be adhered to the upper surface 119 of the body 110 and the upper surface of the barrier portion 114 with an adhesive. The phosphor layer 180 may be attached to the second translucent resin layer 163. Since the second translucent resin layer 163 is disposed between the phosphor layer 180 and the second light emitting chip 153, the phosphor layer 180 is disposed at a position spaced apart from the second light emitting chip 153 It is possible to prevent damage due to heat generated from the second light emitting chip 153.

The phosphor layer 180 may include phosphors in a resin material such as transparent silicone or epoxy. The phosphor layer 180 converts the wavelength of the light emitted from the second light emitting chip 153. The phosphor layer 180 may include at least one of red, green, yellow, and blue phosphors or phosphors of different colors. The phosphor excites a part of the emitted light and emits it as light of a different wavelength.

The phosphor layer 180 may include a phosphor such as a quantum dot. The quantum dot may include an II-VI compound or a III-V compound semiconductor, and may include at least one of red, green, yellow, and red quantum dots or different types. The quantum dot is a nanometer sized particle that can have optical properties resulting from quantum confinement. The specific composition (s), structure and / or size of the quantum dots can be selected so that light of a desired wavelength is emitted from the quantum dots upon excitation with a specific excitation source. By changing the size, the quantum dots can be adjusted to emit light throughout the visible spectrum.

The quantum dot may include one or more semiconductor materials, and examples of the semiconductor material include a Group IV element, a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III- VI compound, an I-III-VI compound, a II-IV-VI compound, a II-IV-V compound, an alloy comprising any of the above, and / or a tertiary and quaternary mixture or alloy , And mixtures of any of the foregoing. The quantum dot is, for example, ZnS, ZnSe, ZnTe, CdS , CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, InSb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS 2, CuInSe 2 , MgS, MgSe, MgTe, and the like, and combinations thereof. In the case of such a quantum dot, since the change in the luminous efficiency depending on the temperature is large, the second light emitting chip 153 can be separated from the second light emitting chip 153 as in the embodiment, thereby reducing the variation in luminous efficiency.

The quantum dots according to the embodiments can be adjusted by changing the size of the quantum dots and / or the composition of the quantum dots. For example, semiconductor nanocrystals including CdSe can be tuned in the visible light range; Semiconductor nanocrystals containing InAs can be tuned in the infrared region.

The quantum dot according to the embodiment emits red light and can emit, for example, a peak wavelength in the range of 615 nm to 630 nm. Quantum dots according to embodiments emit green light and may emit peak wavelengths, for example, in the range of 520 nm to 540 nm. The color reproducibility can be improved by the blue light of the first and second light emitting chips 151 and 153 and the green light and the red light by the phosphor layer 180. The quantum dot according to an embodiment may emit yellow light, for example, may range from 580 to 595 nm.

As another example, the phosphor layer 180 may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, a blue phosphor, or a green phosphor.

The first light L1 emitted to the first light emitting chip 151 may be shorter in wavelength than the second light L2 emitted from the second light emitting chip 153. [ The first and second lights L1 and L2 may be blue light. A part of the second light L2 can be converted into the third light L3 having a longer wavelength than the second light L2 by the phosphor layer 180. [ The third light L3 may include red and green light, or may include at least one of red, green, and yellow. Since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, the light emitting device 100 according to the embodiment can improve the color reproducibility by the blue light of a relatively short wavelength . The lifetime of the second light emitting chip 153 can be improved by using the second light L2 having a long wavelength emitted from the second light emitting chip 153 at the excitation wavelength of the phosphor layer 180. [

In addition, in the embodiment, the first light emitting chip 151 that directly emits the primary color (e.g., blue) light and the second light emitting chip 153 that provides the excitation wavelength are disposed separately in one light emitting device 100, There is a brightness improvement effect.

Here, the lifetime and color reproducibility of the light emitting chips 151 and 153 in the light emitting device 100 will be described.

19 is a diagram showing an example of a wavelength spectrum of a light emitting device according to an embodiment. 19 and 2, in the light emitting device 100, the peak wavelength lambda 1 of the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, and the second light emitting chip A part of the peak wavelength lambda 2 of the second light L2 emitted from the light emitting layer 153 is wavelength-converted into the third light L3. Therefore, the peak wavelength lambda 2 of the second light L2 and the wavelength? The mixed wavelength spectrum (? 3) having the peak wavelength of the third light L3 converted by the first light L1 can be emitted because the peak wavelength of the first light L1 in the region of the first cavity 115 is the wavelength And the peak wavelengths of the second light L2 and the third light L3 can be emitted in a mixed spectrum in the region of the second cavity 117. The light emitting device 100 May be emitted as a mixed spectrum of the blue wavelength of the first light L1, the blue wavelength of the second light L2, and the green and red wavelengths of the third light L3.

The embodiment can improve the color reproducibility due to the peak wavelength of the first light L1 of the first light emitting chip 151 without disposing a separate phosphor on the first light emitting chip 151, It is possible to prevent the luminous flux from dropping with respect to the first light L 1 emitted from the light emitting chip 151. Since the phosphor is not disposed on the first light emitting chip 151, the amount of the phosphor and the area of the phosphor layer 180 can be reduced. In addition, since the phosphor layer 180 is disposed at a position spaced apart from the second light emitting chip 153, the light emitting device 100 can reduce deterioration of the phosphor.

The second light emitting chip 153 is disposed so that the peak wavelength lambda 2 of the second light L2 higher than the peak wavelength lambda 1 of the first light L1 of the first light emitting chip 151 And can be provided as an excitation wavelength, thereby increasing the lifetime of the second light emitting chip 153. Further, since the first light emitting chip 151 not used as the excitation wavelength of the phosphor layer 180 does not need to have higher light output than the second light emitting chip 153 used as the excitation wavelength, Lt; RTI ID = 0.0 > 153). ≪ / RTI >

The lifetime dependence of the light emitting chip according to the excitation wavelength of the light emitting chip and the light output will be described as follows.

Referring to FIG. 20, the higher the excitation wavelength incident on the phosphor layer, the longer the lifetime of the chip emitting the excitation wavelength may be, and the excitation efficiency may be lowered. For example, a light emitting chip having a long wavelength (for example, 470 nm) emitted from the light emitting chip has a longer life than a light emitting chip having a short wavelength (for example, 440 nm). Also, it can be seen that as the light output of the light emitting chip is lower, the lifetime is increased as compared with the light emitting chip emitting the same excitation wavelength. Therefore, when the excitation wavelength of the light emitting chip incident on the phosphor layer is high and the light output is low, the lifetime of the light emitting chip may increase. The lifetime dependence of such a light emitting chip is proportional to the excitation wavelength of the light emitting chip and inversely proportional to the light output.

As shown in FIG. 21, it can be seen that the excitation efficiency of the phosphor layer disposed on the light emitting chip decreases as the excitation wavelength increases. That is, the excitation efficiency of the phosphor layer can be gradually reduced from 450 nm to 550 nm, and the excitation efficiency varies depending on the excitation wavelength.

2, the light output when the peak wavelength of the long wavelength emitted from the second light emitting chip 153 is provided at the excitation wavelength of the phosphor layer 180 and the light output when the short wavelength emitted from the first light emitting chip 151 The excitation efficiency of the phosphor layer 180 excited by the peak wavelength of the long wavelength emitted from the second light emitting chip 153 is slightly higher when the peak wavelength is provided by the excitation wavelength of the phosphor layer 180, But the lifetime of the second light emitting chip 153 can be improved. That is, as compared with the comparative example having the light emitting chip that provides the peak wavelength of the same short wavelength at the excitation wavelength, the light emitting device of the embodiment improves the lifetime of the second light emitting chip 153 that provides the peak wavelength of the long wavelength at the excitation wavelength And since the first light emitting chip 151 is not provided at the excitation wavelength, the life of the first light emitting chip 151 can be improved and the color reproducibility can be improved.

FIG. 22 is a graph comparing lifetime according to light output of the light emitting chip, and FIGS. 23 and 24 are diagrams comparing the peak wavelength of the light emitting chip and the lifetime according to light output.

As shown in FIG. 22, as the light output of the light emitting chip increases, the lifetime of the light emitting chip becomes inversely proportional to the light output. 23 and 24, when the phosphor layers are respectively disposed on the first and second light emitting chips, the first peak wavelength lambda 1 of the first light emitting chip and the first light output B1 by the phosphor layer are The lifetime of the second light emitting chip which emits the second light output B2 is higher than the second light output B2 of the second light emitting chip and the second light output B2 by the phosphor layer, Is longer than the lifetime of the first light emitting chip emitting the output (B1). When the second light output B2 of the second light emitting chip is increased to be the same as the first light output B1, the lifetime of the light emitting chip emitting the third light output B3 at this time is as shown in Fig. 24 . Thus, when the first peak wavelength lambda 1 is replaced with the second peak wavelength lambda 2, the lifetime of the light emitting chip is improved, but the second light output B2 by the second peak wavelength lambda 2 is made to be the first It can be seen that the lifetime is slightly reduced when the output is increased to the same output as the first optical output B1 due to the peak wavelength. The lifetime of the light emitting chip providing the second peak wavelength of the long wavelength at the excitation wavelength is improved over the light emitting chip emitting the first light output B1 regardless of the light outputs B2 and B3. Therefore, the lifetime of the second light emitting chip 153 having the excitation wavelength of the second peak wavelength lambda 2, which is a long wavelength, can be increased as shown in Fig. In the embodiment, since the phosphor layer 180 is not disposed on the first light emitting chip 151, the color reproducibility can be improved in a light source requiring a short wavelength like a display. The embodiment includes a first light emitting chip 151 that directly emits first light L1 and a second light emitting chip 153 that emits second light L2 and third light L3 and a phosphor layer 180 The reliability of the life span and color reproducibility of the light emitting device 100 can be improved.

25 shows the relationship between the excitation wavelength of the light emitting chip according to the embodiment and the lifetime of the phosphor layer at the light output. Fig. 26 is a chart comparing the peak wavelength and light output in Fig. 25, Peak wavelength and light output of the light emitting chip.

As shown in Fig. 25, when the phosphor layer is disposed on the light emitting chip having a light output of 70 mW and a peak wavelength of 445 nm, the fluorescent output P1 appears as the first light output B1 shown in Fig. In order to improve the lifetime of the light emitting chip, the fluorescent output P2 when the wavelength is 465 nm and the light output is 70 mW is reduced to the second light output B2 in Fig. Here, in order to compensate the second light output B2 with the first light output B1, the third light output B3 can be made 1.2 times the second light output B2. In this case, in FIG. 27, the lifetime of the light emitting chip having the first light output B1 is about 1100 hours, but the lifetime of the light emitting chip having the second light output B2 is increased to about 4000 hours, and the third light output B3 ) Is about 2500 hours. That is, when the peak wavelength is high in the same color as in FIG. 25, the lifetime of the light emitting chip is improved even if the light output is increased.

The embodiment can improve the lifetime of the light emitting chip having a longer wavelength by making the peak wavelength emitted from the relatively long wavelength light emitting chip in the same color to be the excitation wavelength than in the case where the light emitting chip having a short wavelength is made to be the excitation wavelength.

3 to 6 are views showing an example of the phosphor layer of the light emitting device according to the embodiment.

Referring to FIG. 3, the phosphor layer 180 according to the embodiment includes a resin layer 182 having a phosphor in a transparent tube 181. The transparent tube 181 may be formed of a plastic material or a capillary having a glass material, but is not limited thereto. The resin layer 182 may be sealed in the transparent tube 181 and may include transparent silicone or epoxy. The phosphor may be a phosphor, for example, a quantum dot disclosed in the embodiment, but is not limited thereto. The shape of the transparent tube 181 may be circular or polygonal, but is not limited thereto. The thickness of the phosphor layer 180 according to the embodiment may be 2 nm or less, for example, 1.5 nm or less, and the thickness of the light emitting device may be increased if the thickness is exceeded.

4, a phosphor layer 180 according to an embodiment includes a sidewall 186 having an open region 184, a resin layer 185 having a phosphor in the sidewall 186, a sidewall 186, And a transparent film (187, 188) disposed on at least one of an upper surface and a lower surface of the ground layer (185).

The thickness of the phosphor layer 180 may range from 0.7 mm or more, for example, 0.75 mm to 1.5 mm. When the thickness of the phosphor layer 180 is less than 0.7 mm, it is difficult to secure the thickness of the resin layer 185 and the wavelength conversion efficiency is lowered. When the thickness exceeds 1.5 mm, the thickness of the light emitting element increases, Increasing the thickness of the films 187 and 188 may cause optical loss. Here, the thickness of the resin layer 185 may be thinner than the thickness of the side wall 186, and may be in a range of less than 1 mm, for example, 0.4 mm to 0.7 mm. When the thickness of the resin layer 185 is thinner than the above range, the wavelength conversion efficiency is lowered. If the thickness is larger than the above range, the thickness of the light emitting device is increased.

The sidewalls 186 include an open region 184 therein, and the outer shape may include a circular or polygonal frame shape. The sidewalls 186 may include a frame shape around the open region 184. The open region 184 may include a circular or polygonal shape. 2, the open region 184 may have a shape corresponding to the shape of the upper surface of the first cavity 115, for example, the same shape, but the present invention is not limited thereto. The side wall 186 may be formed to surround the side surface of the resin layer 185. The side wall 186 may be formed to surround the outer periphery of the resin layer 185.

The length D5 of the open area 184 of the side wall 186 may be equal to or longer than the upper length D3 of the second cavity 117 of FIG. The lower surface area of the open area 184 may be the same as or larger than the upper surface or the light exit surface of the first translucent resin layer 161 in Fig. The lower surface area of the open area 184 may be equal to or smaller than the upper surface area thereof, but is not limited thereto.

The side wall 186 may be a reflective material. The side wall 186 may comprise a glass material such as white glass or a glass material having a high reflectance. The white glass or the glass material having high reflectance can be formed by adding white particles and / or bubbles into the transparent glass. The reflectance of the side wall 186 may be higher than that of the transparent films 187 and 188.

As another example, the side wall 186 may include a resin material, and the resin material may include a resin material such as polyphthalamide (PPA), an epoxy or a silicone material. A metal oxide such as TiO ₂ , SiO ₂ or a metal oxide or a white particle filler may be added to the resin material. The side wall 186 may be made of a white resin. The side wall 186 may comprise a ceramic material. The side wall 186 may be formed to have a dark color or a black color in order to improve contrast, but the present invention is not limited thereto. When the side wall 186 is made of a reflective material, the incident light can be reflected. A fine concavo-convex pattern may be formed on the inner surface of the side wall 186, but the present invention is not limited thereto.

As another example, the side wall 186 may be a light-transmitting material, for example, a transparent glass material or a transparent resin material. The side wall 186 may be made of a resin material such as silicon or epoxy.

When the side wall 186 is made of a light-transmitting material, the incident light can be emitted through the side surface. As another example, a metal reflective layer may be further disposed on the inner side or inner side / bottom surface of the side wall 186, and this reflective layer may effectively reflect the incident light. At this time, the material of the side wall 186 may be a light-transmitting material or a reflective material.

At least one of the inner side surface and the outer side surface of the side wall 186 may be formed as a vertical or inclined surface, but the present invention is not limited thereto. The inner surface of the side wall 186, for example, the surface that contacts the resin layer 185, may be disposed perpendicular or inclined with respect to the lower surface of the first transparent film 187. When the inner surface of the side wall 186 is inclined, the top surface width or the top surface area of the resin layer 185 may be larger than the bottom width or the bottom surface area.

The resin layer 185 may be doped with a phosphor in a resin material such as transparent silicone or epoxy. The resin layer 185 excites the excitation wavelength to perform wavelength conversion. The resin layer 185 may include at least one of red, green, yellow, and blue phosphors or different types. The phosphor excites a part of the emitted light and emits it as light of a different wavelength. The phosphor may be the phosphor disclosed in the embodiment.

Transparent films 187 and 188 may be disposed on at least one or both of the lower and upper sides of the resin layer 185. The transparent films 187 and 188 may include a first transparent film 187 disposed under the resin layer 185 and a second transparent film 188 disposed on the resin layer 185. [ The transparent films 187 and 188 may be disposed on the incident surface and / or the exit surface of the resin layer 185.

5 or 6, any one of the first and second transparent films 187 and 188 may be removed from the upper surface or the lower surface of the phosphor layer 180. For example, as shown in FIG. 5, The first transparent film 187 may be removed, or the second transparent film 188 may be removed as shown in FIG. 6, but the present invention is not limited thereto. In manufacturing the phosphor layer 180, any one of the transparent films 187 and 188 may be a base film supported during the dispensing process of the resin layer 185.

The first and second transparent films 187 and 188 may include glass or a transparent resin film. The first and second transparent films 187 and 188 are bonded on the side wall 186 to protect the resin layer 185. The first and second transparent films 187 and 188 may be formed of a material having a refractive index equal to or lower than the refractive index of the molding member 181. The first and second transparent films 187 and 188 may be formed of a material having a difference in refractive index of the first light transmitting resin layer 161 of 0.2 or less. The first and second transparent films 187 and 188 may have a refractive index lower than that of the second translucent resin layer 163 and the resin layer 185. As another example, when the second translucent resin layer 163 is removed in FIG. 2, an air gap may exist in the second cavity 117, and the first transparent film 187 may be disposed.

The first transparent film 187 may be attached to the lower surface of the side wall 186 and the lower surface of the resin layer 185. The second transparent film 188 may be attached to the upper surface of the side wall 186 and the upper surface of the resin layer 185. The lower surface of the phosphor layer 180 may be adhered to the second translucent resin layer 163. The lower surface of the first transparent film 187 may be adhered to the surface of the second translucent resin layer 163. The first transparent film 187 is adhered before curing the second translucent resin layer 163 so that light loss at the interface between the first transparent film 187 and the second translucent resin layer 163 You can reduce it.

The thickness of the first and second transparent films 187 and 188 may be in the range of 0.05 mm or more and 0.3 mm or less, for example, 0.08 mm to 0.2 mm. When the thickness of the first and second transparent films 187 and 188 is less than 0.05 mm, handling may be difficult and rigidity may be caused. When the thickness exceeds 0.2 mm, the thickness of the phosphor layer 180 becomes thick The light transmittance may be lowered.

The thickness of the resin layer 185 may be thicker than the thickness of the first transparent film 187 or the second transparent film 188 and may be thicker than the sum of the thicknesses of the first and second transparent films 187 and 188. The first and second transparent films 187 and 188 may be formed on the upper and lower surfaces of the side wall 186 and the entire upper and lower surfaces of the side wall 186. In this case, Can be contacted.

As another example, the resin layer 185 may have a thickness that is thinner than the thickness of the side wall 186. The top surface of the resin layer 185 may be flat, convex or concave. The side wall 186 may protrude from the outer periphery of the first and second transparent films 187 and 188, but is not limited thereto.

The manufacturing process of the phosphor layer 180 disclosed in Fig. 4 is similar to that of the first embodiment except that the sidewall 186 is formed on the first transparent film 187 and then the resin layer 185 is formed on the open region 184 of the sidewall 186. [ As shown in FIG. A second transparent film 188 is laminated on the resin layer 185 and the side wall 187 before the resin layer 185 is cured and then cut to a predetermined size to form a phosphor layer 180 having a desired size .

The process of attaching the phosphor layer 180 on the light emitting device is performed by molding the second translucent resin layer 163 in the light emitting device 100 and then curing the first translucent resin layer 163 before curing the second translucent resin layer 163 The transparent film 187 can be attached on the second translucent resin layer 163.

7 is another example of the light emitting device of Fig. In describing Fig. 7, the same portions as those of the above-described embodiments will be described with reference to the description of the above embodiments.

7, the light emitting device includes a plurality of cavities 115 and 117 in a body 110, light emitting chips 151 and 153 disposed in the cavities 115 and 117, and a light transmitting resin layer And a phosphor layer 180 is disposed on the second light emitting chip 153 that emits a relatively long wavelength among the plurality of light emitting chips 151 and 153. The first light emitting chip The light-transmitting layer 170 may be disposed on the light-

The phosphor layer 180 and the first and second light emitting chips 151 and 153 will be described with reference to the embodiments. The light-transmitting layer 170 may be disposed on the first cavity 115 and may overlap the first light-emitting chip 151 in the vertical direction. The transparent layer 170 may be made of a transparent resin material or a transparent glass material in a transparent capillary tube. However, the transparent capillary tube is not limited thereto.

The thickness of the light-transmitting layer 170 may be equal to or thinner than the thickness of the phosphor layer 180. This is because the light-transmitting layer 170 and the phosphor layer 180 are horizontally disposed on the light-emitting device, so that the surface of the light-emitting device can be provided in a horizontal plane.

8 is another example of a light emitting device according to an embodiment. In the description of FIG. 8, the same configuration as that described above will be described with reference to the above description.

8, the light emitting device 100 includes a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and a plurality of lead frames 121, 131, and 141 that are electrically connected to the plurality of lead frames 121, A light emitting chip 151 and 153 for emitting light L1 and L2 having a peak wavelength and a light transmitting resin layer 161 and 163 covering each of the light emitting chips 151 and 153, And a phosphor layer 180 disposed on the light emitting chip 153 that emits light.

A fluorescent layer 180 may be disposed in the second cavity 117 of the body 110 and a second light transmitting resin layer 163 may be disposed between the fluorescent layer 180 and the second light emitting chip 153. have.

A step structure 114A is disposed in the second cavity 117 of the body 110 and the step structure 114A may be disposed in a stepped shape with a lower depth than the upper surface of the body 110. [ The step structure 114A may be disposed closer to the upper surface 119 of the body 110 than the bottom of the second cavity 117. [ The phosphor layer 180 may be adhered to the surface of the step structure 114A with an adhesive, but the present invention is not limited thereto. The adhesive may be silicone or epoxy or may be made of the same material as the second translucent resin layer 163.

The step structure 114A may be formed with an outer perimeter of the phosphor layer 180. The upper surface of the phosphor layer 180 may be the same or lower than the upper surface 119 of the body 110. In this case, The light leakage due to the side surface of the phosphor layer 180 can be prevented.

As another example, the upper surface of the phosphor layer 180 may protrude from the upper surface 119 of the body 110. In this case, it is possible to secure the height of the second translucent resin layer 163, Can be improved and the directivity angle distribution of light through the phosphor layer 180 can be improved.

The barrier layer 114 between the first cavity 115 and the second cavity 117 has a width of the top surface because the phosphor layer 180 is disposed in the step structure 114A of the second cavity 117 Can be reduced compared with the structure of FIG. Accordingly, the length of the light emitting device can be reduced.

9 is a side sectional view showing a light emitting device according to the second embodiment. In describing FIG. 9, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

9, the light emitting device includes a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and a plurality of lead frames 121, 131, and 141 electrically connected to the plurality of lead frames 121, A first light-transmitting resin layer 161 covering the first light-emitting chip 151 among the light-emitting chips 151 and 153 and a second light-transmitting resin layer 161 covering the second light-emitting chip 153, And a second translucent resin layer 163A having a phosphor covering the first translucent resin layer 163A.

A first light transmitting resin layer 161 may be disposed in the first cavity 115 and a second light transmitting resin layer 163A may be disposed in the second cavity 117. The second translucent resin layer 163A may include a phosphor according to an embodiment. Since the second light-transmitting resin layer 163A having the fluorescent material is disposed on the second light emitting chip 153, it is not necessary to dispose the fluorescent material layer on the body 110 separately.

The second translucent resin layer 163A may be a single layer or a multilayer, and may be a layer having a phosphor in the case of a single layer. In the case of a multilayer, the second translucent resin layer 163A may include at least one first resin layer and a second resin having a phosphor on the first resin layer. Layer structure of the layer. The at least one first resin layer may be a layer not containing a phosphor.

The second translucent resin layer 163A having the phosphor may be disposed on the second light emitting chip 153 that emits a relatively long wavelength among the plurality of light emitting chips 151 and 153. In the light emitting device according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, the color reproducibility can be improved by the blue light of a relatively short wavelength. Further, by using the second light L2 having a long wavelength emitted from the second light emitting chip 153 at the excitation wavelength of the second translucent resin layer 163A having the phosphor, the lifetime of the second light emitting chip 153 is improved You can give.

10 is a side sectional view showing a light emitting device according to the third embodiment. In describing FIG. 10, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

10, the light emitting device includes a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and a plurality of lead frames 121, 131, and 141 electrically connected to at least two of the plurality of lead frames 121, A light emitting chip 151A or 153A for emitting light L1 or L2 having a different peak wavelength and a light transmitting resin layer 161 or 163 covering each of the light emitting chips 151A and 153A, And a phosphor layer 180A disposed on the second light emitting chip 153 that emits light having a relatively long wavelength. The configurations of the light L1 and L2 emitted from the first and second light emitting chips 151A and 153A and the phosphor layer 180A are the same as those of the light emitting chips 151 and 153 and the phosphor layer 180 in FIG. .

At least one or both of the first and second light emitting chips 151A and 153A may be arranged in a flip chip manner. The first light emitting chip 151A may be disposed on the first lead frame 121 and the first frame portion 132 of the second lead frame 131 in a flip chip manner and may be electrically connected. The second light emitting chip 153A may be disposed on the second frame portion 134 of the second lead frame 131 and the third lead frame 141 in a flip chip type and electrically connected thereto. The first and second light emitting chips 151A and 153A may be a light-transmitting substrate or a semiconductor layer on the upper portion, but the present invention is not limited thereto.

The phosphor layer 180A may be disposed in the second cavity 117. [ The phosphor layer 180A may be disposed in the second translucent resin layer 163. The phosphor layer 180A may be in contact with the second light emitting chip 153A. The phosphor layer 180A may be in contact with the upper surface of the second light emitting chip 153A, and the phosphor may be any of the phosphors described above, but the present invention is not limited thereto. The phosphor layer 180A may have a larger area than the upper surface area of the second light emitting chip 153, but the present invention is not limited thereto.

The phosphor layer 180A may be disposed on the second light emitting chip 153A that emits a relatively long wavelength among the plurality of light emitting chips 151 and 153. [ In the light emitting device according to the embodiment, since the first light L1 emitted from the first light emitting chip 151A is emitted without wavelength conversion, the color reproducibility can be improved by the relatively short wavelength of blue light. The lifetime of the second light emitting chip 153A can be improved by using the second light L2 having a long wavelength emitted from the second light emitting chip 153A at the excitation wavelength of the phosphor layer 180A.

11 is a side sectional view showing a light emitting device according to the fourth embodiment. In describing Fig. 11, the same configuration as that of the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

11, the light emitting device includes a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and a plurality of lead frames 121, 131, and 141 electrically connected to the plurality of lead frames 121, Light emitting chips 151 and 153 for emitting light L1 and L2 and light-transmitting resin layers 161 and 163 for covering the light emitting chips 151 and 153, respectively, and light of relatively long wavelength among the plurality of light emitting chips 1511 and 53 And a phosphor layer 180B disposed around the second light emitting chip 153 for emitting light. The configurations of the light L1 and L2 emitted from the first and second light emitting chips 151 and 153 and the phosphor layer 180B will be described with reference to the description of the light emitting chips 151 and 153 and the phosphor layer 180 do.

The phosphor layer 180B may be disposed in the second cavity 117. [ The phosphor layer 180B may be disposed in the second translucent resin layer 163. The phosphor layer 180B may be disposed around the second light emitting chip 153 that emits light of a relatively long wavelength among the plurality of light emitting chips 151 and 153. [ The phosphor layer 180B is disposed on the circumferential surface 117A of the second cavity 117 to convert the wavelength of a part of the second light L2 emitted from the second light emitting chip 153. [ The phosphor layer 180B may be disposed on a part or all of the circumferential surface 117A of the second cavity 117. [ The lower portion of the phosphor layer 180B may be in contact with or spaced from the second frame portion 134 and the third lead frame 141 of the second lead frame 131. [

In the light emitting device according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, the color reproducibility can be improved by the blue light of a relatively short wavelength. The lifetime of the second light emitting chip 153 can be improved by using the second light L2 having a long wavelength emitted from the second light emitting chip 153 at the excitation wavelength of the phosphor layer 180B.

12 is a side sectional view showing a light emitting device according to the fourth embodiment. In describing Fig. 12, the same configuration as that of the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

12, the light emitting device includes a body 110, a plurality of lead frames 121, 131, and 141 disposed on the body 110, and a plurality of lead frames 121, 131, and 141 that are electrically connected to the plurality of lead frames 121, Light emitting chips 151 and 153 that emit light L1 and L2 and light-transmitting resin layers 161 and 163 that cover the light emitting chips 151 and 153, respectively, and a plurality of light emitting chips 151 and 153, And a phosphor layer 180 disposed on the light emitting chip 153.

The light emitting device according to the embodiment may include an optical filter 190 on the phosphor layer 180. The optical filter 190 reflects the peak wavelength of the second light L2 emitted from the second light emitting chip 153 and passes only the wavelength-converted light. Accordingly, the light emitted to the optical filter 190 may be the third light L3 converted by the phosphor layer 180. The light emitting device may provide a spectrum in which the first light L1 emitted from the first light emitting chip 151 and the third light L3 emitted by the phosphor layer 180 are mixed. Accordingly, the blue wavelength can be realized only by the peak wavelength of the short wavelength of the second light (λ 1 in FIG. 19) emitted from the first light emitting chip 151, thereby further improving the color purity and color reproducibility have.

13 is a side sectional view showing a light emitting device according to a fifth embodiment. In explaining FIG. 13, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

13, the light emitting device includes a body 210, a plurality of lead frames 221, 225, 231, 235 disposed on the body 210, and a plurality of lead frames 221, 225, 231, 235 electrically connected to the plurality of lead frames 221, A plurality of light emitting chips 151 and 153 for emitting light L1 and L2 and a light transmitting resin layer 161 and 163 covering each of the light emitting chips 151 and 153, And a phosphor layer 180 disposed on the second light emitting chip 153 that emits light. The configurations of the light L1 and L2 emitted from the first and second light emitting chips 151 and 153 and the phosphor layer 180 will be described with reference to FIG.

The body 210 may be formed of a ceramic material, thereby improving heat dissipation efficiency of the light emitting device. The ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC) which is co-fired. The material of the body 210 may be, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ or AlN, mK or more.

The body 210 may include first and second cavities 215 and 217, and the sides of the first and second cavities 215 and 217 may be vertical, inclined or stepped. At least two lead frames may be disposed in the first and second cavities 215 and 217. The first light emitting chip 151 and the first light transmitting resin layer 161 are disposed in the first cavity 215 and the second light emitting chip 153 according to the embodiment is disposed in the second cavity 217. [ And the second translucent resin layer 163 may be disposed.

The body 210 includes a reflection portion 213 having first and second cavities 215 and 217 and a support portion 211 for supporting the reflection portion 213. The area between the first and second cavities 215 and 217 may include a barrier 214.

The first light emitting chip 151 may be disposed on at least one of the first and second lead frames 221 and 225 and may be connected to the first and second lead frames 221 and 225 by wires 155. The second light emitting chip 153 may be disposed on at least one of the third and fourth lead frames 231 and 235 and may be connected to the third and fourth lead frames 231 and 235 by a wire 157. As another example, the first and second light emitting chips 151 and 153 may be arranged in a flip chip manner, but the present invention is not limited thereto.

A plurality of connection electrodes 222, 227, 232 and 237 are disposed in the body 210 and a plurality of lead electrodes 223, 226, 233 and 236 may be disposed on a lower surface of the body 210. The connection electrodes 222, 227, 232 and 237 may include first to fourth connection electrodes 222, 227, 232 and 237 disposed at different positions, and the lead electrodes 223, 226, 233 and 236 may include first to fourth lead electrodes 223, 226, 233 and 236, . ≪ / RTI >

The first lead frame 221 disposed in the first cavity 215 is connected to the first lead electrode 223 through the first connection electrode 222 and the second lead frame 225 is connected to the second connection electrode 222. [ May be connected to the second lead electrode 226 through the second electrode 227. The third lead frame 231 disposed in the second cavity 217 is connected to the third lead electrode 233 via the third connection electrode 232 and the fourth lead frame 235 is connected to the fourth connection electrode 233. [ May be connected to the fourth lead electrode 236 through the second lead electrode 237. The first and second light emitting chips 151 and 153 may be connected to each other in parallel or may be connected in series, but the present invention is not limited thereto.

Here, the second and third lead frames 225 and 231 may be one lead frame or may be connected to each other. Alternatively, the second and third lead electrodes 226 and 233 may be one lead electrode or may be connected to each other, but the present invention is not limited thereto. The first and second light emitting chips 151 and 153 may be connected to each other in series.

The phosphor layer 180 may be disposed on the second light emitting chip 153 that emits light L2 having a relatively long wavelength within a blue wavelength range. The phosphor layer 180 may be disposed on the second cavity 217 and the second translucent resin layer 163. In the light emitting device according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, the color reproducibility can be improved by the blue light of a relatively short wavelength. The lifetime of the second light emitting chip 153 can be improved by using the second light L2 having a long wavelength emitted from the second light emitting chip 153 at the excitation wavelength of the phosphor layer 180. [

14 is a view showing a light unit having a light emitting device according to the embodiment. The light unit according to the embodiment may be a light emitting module, but is not limited thereto.

Referring to FIG. 14, one or a plurality of light emitting devices 100 may be disposed on a circuit board 310 of a light unit. The light emitting device 100 may include a light emitting device according to an embodiment of the present invention. The light emitting device 100 may be disposed on the circuit board 310 and may be electrically connected to the circuit pattern of the circuit board 310.

The circuit board 310 may be a printed circuit board (PCB) including a circuit pattern. However, the circuit board may include a resin-made PCB, a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like, but the present invention is not limited thereto.

The light emitting device 100 may be arranged on the circuit board 310 in rows and / or columns, but the present invention is not limited thereto. Since the first light L1 emitted from the first light emitting chip 151 on the circuit board 310 is emitted without wavelength conversion, the light unit according to the embodiment improves the color reproducibility by the relatively short wavelength of blue light You can give. The lifetime of the second light emitting chip 153 can be improved by using the second light L2 having a long wavelength emitted from the second light emitting chip 153 at the excitation wavelength of the phosphor layer 180. [

15 is a view showing another example of a light unit having a light emitting element according to the embodiment. The light unit according to the embodiment may be a light emitting module, but is not limited thereto.

15, a plurality of light emitting devices 101 and 103 may be disposed on a circuit board 310, and the plurality of light emitting devices 101 may be disposed adjacent to each other with a predetermined gap G1 . The gap G1 between the plurality of light emitting devices 101 and 103 may be spaced within a distance that the light beams L1, L2 and L3 emitted from the light emitting devices 101 and 103 may be mixed with each other.

The light unit includes a first light emitting device 101 having a first light emitting chip 151 that emits a peak wavelength of the first light L1 described in the embodiment and a second light emitting device 101 having a peak of the second light L2 And the second light emitting element 103 having the second light emitting chip 153 for emitting the wavelength may be arranged in a state that they are separated from each other. The light emission regions of the first and second light emitting devices 101 and 103 can be defined as one illumination region.

The first light emitting device 101 emits a first light L1 having a short wavelength from the first light emitting chip 151 disposed in the first cavity 115 of the body 110, A plurality of lead frames 121 and 141 may be connected to the first light emitting chip 151. The second light emitting device 103 emits a second light L2 having a long wavelength from the second light emitting chip 153 disposed in the second cavity 117 of the body 110, A plurality of lead frames 121 and 143 may be connected to the second light emitting chip 153.

A phosphor layer 180 may be disposed on the second light emitting chip 153. The phosphor layer 180 may include a phosphor according to an embodiment. The first and second light emitting chips 151 and 153 may emit blue light and the second light emitting chip 153 may emit blue light having a wavelength longer than the peak wavelength of the first light L1 emitted from the first light emitting chip 151. [ And can emit the second light L2. The first and second light emitting chips 151 and 153 and the phosphor layer 180 will be described with reference to the embodiments.

Since the light unit according to the embodiment emits the first light L1 emitted from the first light emitting chip 151 of the light emitting element 101 on the circuit board 310 without wavelength conversion, The color reproducibility can be improved. The second light emitting device 103 uses the second light L2 having a long wavelength emitted from the second light emitting chip 153 at the excitation wavelength of the phosphor layer 180 so that the lifetime of the second light emitting chip 153 is Can be improved.

16 is a view showing another example of a light unit having light emitting chips according to the embodiment. The light unit according to the embodiment may be a light emitting module, but is not limited thereto.

16, a plurality of light emitting chips 151 and 153 are disposed on a circuit board 330, and a plurality of light emitting chips 153 and 153 emitting light of a relatively long wavelength among the plurality of light emitting chips 151 and 153 The phosphor layer 180 may be disposed on the phosphor layer 180. The first light emitting chip 151, the second light emitting chip 153 and the phosphor layer 180 will be described with reference to the structures disclosed in the embodiments.

A reflector 335 may be disposed on the circuit board 330 and the reflector 335 may be disposed on the outside of the first light emitting chip 151 and the second light emitting chip 153. A side wall portion 334 may be disposed between the first and second light emitting chips 151 and 153 and the side wall portion 334 may be formed of the same material as the reflector 335. The reflector 335 may be made of a white resin material or a solder resist material, but is not limited thereto.

The first light emitting chip 151 is molded in the first light transmitting resin layer 361 disposed in the first cavity 315 and the second light emitting chip 153 is molded in the second light transmitting resin layer 361 in the second cavity 317. [ May be molded into the layer 363. The first and second transparent resin layers 361 and 363 may include a resin material such as silicon or epoxy. The phosphor layer 180 is disposed on the second translucent resin layer 363 to convert light emitted from the second light emitting chip 153. In the light unit according to the embodiment, since the first light L1 emitted from the first light emitting chip 151 is emitted without wavelength conversion, the color reproducibility can be improved by the relatively short wavelength of blue light. The lifetime of the second light emitting chip 153 can be improved by using the second light L2 having a long wavelength emitted from the second light emitting chip 153 at the excitation wavelength of the phosphor layer 180. [

17 is a view showing an example of a light emitting chip of a light emitting device or a light unit according to the embodiment.

17, the light emitting chips 151 and 153 include a first conductivity type semiconductor layer 41, an active layer 50 disposed on the first conductivity type semiconductor layer 41, And a second conductivity type semiconductor layer 75 disposed on the electron blocking layer 71. The second conductivity type semiconductor layer 75 may be formed on the electron blocking layer 71,

The light emitting chips 151 and 153 may include one or more of a buffer layer 31 and a substrate 21 under the first conductive type semiconductor layer 41. The light emitting chips 151 and 153 are formed between the first conductive semiconductor layer 41 and the active layer 50 and the first clad layer 43 and between the active layer 50 and the second conductive semiconductor layer 75 2 cladding layer (not shown).

The substrate 21 may be, for example, a translucent, conductive substrate or an insulating substrate. For example, the substrate 21 may include at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ . A plurality of protrusions (not shown) may be formed on the upper surface and / or the lower surface of the substrate 21, and each of the plurality of protrusions may include at least one of a hemispherical shape, a polygonal shape, and an elliptical shape, And may be arranged in a stripe form or a matrix form. The protrusions can improve the light extraction efficiency. A plurality of compound semiconductor layers may be disposed on the substrate 21. The plurality of compound semiconductor layers may be grown using an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) A dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), or the like. However, the present invention is not limited thereto.

The buffer layer 31 may be disposed between the substrate 21 and the first conductive type semiconductor layer 41. The buffer layer 31 may be formed of at least one layer using Group II to VI compound semiconductors. The buffer layer 31 includes a semiconductor layer using a Group III-V compound semiconductor, for example, In _x Al _y Ga _1-xy N (0? _X? 1, 0? Y? Lt; = 1). The buffer layer 31 may be formed as a single layer or a multilayer including at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, have. The buffer layer 31 may include a superlattice structure in which different semiconductor layers are alternately arranged. The buffer layer 31 may be formed to reduce the difference in lattice constant between the substrate 21 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The lattice constant of the buffer layer 31 may have a value between lattice constants between the substrate 21 and the nitride-based semiconductor layer. The buffer layer 31 may include an undoped semiconductor layer, and the undoped semiconductor layer may have lower electrical conductivity than the first conductive semiconductor layer 41. The undoped semiconductor layer has intrinsic first conductivity type characteristics even if it is not doped with a conductive dopant. The buffer layer 31 may be formed as a single layer or a multilayer.

The first conductive semiconductor layer 41 may be disposed between the active layer 50 and at least one of the substrate 21 and the buffer layer 31. The first conductive semiconductor layer 41 may be formed of at least one of Group III-V and Group II-VI compound semiconductors doped with a first conductivity type dopant. The first conductivity type semiconductor layer 41 is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? . The first conductive semiconductor layer 41 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The first conductive semiconductor layer 41 may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The first conductivity type semiconductor layer 41 may be a single layer or a multilayer structure. The first conductive semiconductor layer 41 may have a superlattice structure in which at least two different layers are alternately arranged. The first conductive semiconductor layer 41 may be an electrode contact layer.

The first cladding layer 43 may include at least one of Group II-VI and Group III-V compound semiconductors. The first cladding layer 43 may be an n-type semiconductor layer having a dopant of the first conductivity type, for example, an n-type dopant. The first cladding layer 43 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, May be an n-type semiconductor layer doped with an n-type dopant. The first cladding layer 43 may be a single layer or a multi-layered structure.

The active layer 50 may be formed of at least one of a single well, a single quantum well, a multi-well, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure . The active layer 50 may be formed by combining electrons (or holes) injected through the first conductive type semiconductor layer 41 and holes (or electrons) injected through the second conductive type semiconductor layer 75, And is a layer which emits light due to a band gap difference of an energy band according to a material of the active layer 50. [ The active layer 50 may be formed of a compound semiconductor. The active layer 50 may be formed of at least one of Group II-VI and Group III-V compound semiconductors.

When the active layer 50 is implemented as a multi-well structure, the active layer 50 includes a plurality of alternately arranged well layers and a plurality of barrier layers, and the pair of well layers / . InGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, or InGaN / AlGaN. InP / GaAs < / RTI &gt; pair. The well layer may be disposed of a semiconductor material having a composition formula of, for example, In _x Al _y Ga _1-xy N (0 <x? 1, 0? Y? 1, 0? _X + y < The barrier layer may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? _X? 1, 0? Y? 1, 0? _X + y < The active layer 50 may emit at least one peak wavelength of ultraviolet, blue, green, and red wavelengths. For example, the active layer 50 can provide different peak wavelengths of the light emitting chips depending on the composition of indium or aluminum.

The electron blocking layer 71 is disposed on the active layer 50. The electron blocking layer 71 may include an AlGaN-based semiconductor. The electron blocking layer 71 may be a p-type semiconductor layer having a second conductivity type dopant, for example, a p-type dopant. The electron blocking layer 71 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, Lt; RTI ID = 0.0 &gt; p-type &lt; / RTI &gt;

The second conductivity type semiconductor layer 75 may be disposed on the electron blocking layer 71. The second conductivity type semiconductor layer 75 is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + . The second conductive semiconductor layer 75 may include at least one of, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, May be a doped p-type semiconductor layer. The second conductivity type semiconductor layer 75 may be a single layer or a multilayer. The second conductive semiconductor layer 75 may have a superlattice structure in which at least two different layers are alternately arranged. The second conductive semiconductor layer 75 may be an electrode contact layer.

The light emitting structure may include the first conductivity type semiconductor layer 41 to the second conductivity type semiconductor layer 75. As another example, in the light emitting structure, the first conductivity type semiconductor layer 41 and the first cladding layer 43 are a p-type semiconductor layer, the second cladding layer 73 and the second conductivity type semiconductor layer 75 are n Type semiconductor layer. Such a light emitting structure may be implemented by any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The light emitting chips 151 and 153 include a first electrode 91 and a second electrode 95. The first electrode 91 may be electrically connected to the first conductive semiconductor layer 41 and the second electrode 95 may be electrically connected to the second conductive semiconductor layer 75. The first electrode 91 may be disposed on the first conductive semiconductor layer 41 and the second electrode 95 may be disposed on the second conductive semiconductor layer 75. The first electrode 91 and the second electrode 95 may have a current diffusion pattern having an arm structure or a finger structure. The first electrode 91 and the second electrode 95 may be made of a metal having properties of an ohmic contact, an adhesive layer, and a bonding layer, and may not be transparent. The first electrode 91 and the second electrode 95 may be formed of a material selected from the group consisting of Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Alloys.

An electrode layer 93 may be disposed between the second electrode 95 and the second conductive semiconductor layer 75. The electrode layer 93 may be a light transmissive material that transmits light of 70% And may be formed of a metal or a metal oxide, for example. The electrode layer 93 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx, NiO, Al, Ag, Pd, Rh, Pt and Ir.

An insulating layer 81 may be disposed on the electrode layer 93. The insulating layer 81 may be disposed on the upper surface of the electrode layer 93 and the side surface of the semiconductor layer and may be selectively in contact with the first and second electrodes 91 and 95. The insulating layer 81 includes an insulating material or an insulating resin formed of at least one of oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn and Zr. The insulating layer 81 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 81 may be formed as a single layer or a multilayer, but is not limited thereto.

18 is a view showing an example of a vertical type light emitting chip using the light emitting chip of Fig. In describing Fig. 18, the same parts as those shown in Fig. 17 will be described with reference to the description of the embodiments disclosed above.

18, the light emitting chips 151 and 153 are formed on the first conductivity type semiconductor layer 41 with a first electrode 91 and a plurality of conductive layers 96, 97 and 98 below the second conductivity type semiconductor layer 75 , 99).

The second electrode is disposed under the second conductive semiconductor layer 75 and includes a contact layer 96, a reflective layer 97, a bonding layer 98, and a support member 99. The contact layer 96 is in contact with the semiconductor layer, for example, the second conductivity type semiconductor layer 75. The contact layer 96 may be made of a low conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or Ni or Ag. A reflective layer 97 is disposed under the contact layer 96 and the reflective layer 97 is formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, And at least one layer made of a material selected from the group. The reflective layer 97 may be in contact with the second conductive semiconductor layer 75, but the present invention is not limited thereto. A bonding layer 98 is disposed under the reflective layer 97 and the bonding layer 98 may be used as a barrier metal or a bonding metal. The material may be, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta and an optional alloy.

A channel layer 83 and a current blocking layer 85 are disposed between the second conductive type semiconductor layer 75 and the second electrode. The channel layer 83 is formed along the bottom edge of the second conductive semiconductor layer 75, and may be formed in a ring shape, a loop shape, or a frame shape. The channel layer 83 comprises a transparent conductive material or an insulating material, such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ , and TiO ₂ . The inner side of the channel layer 83 is disposed below the second conductivity type semiconductor layer 75 and the outer side is disposed further outward than the side surface of the light emitting structure. The current blocking layer 85 may be disposed between the second conductive semiconductor layer 75 and the contact layer 96 or the reflective layer 97. The current blocking layer 85 may include at least one of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ and TiO ₂ . As another example, the current blocking layer 85 may also be formed of a metal for Schottky contact.

The current blocking layer 85 is disposed to correspond to the first electrode 91 disposed on the light emitting structure and the thickness direction of the light emitting structure. The current blocking layer 85 may interrupt the current supplied from the second electrode and diffuse the current to another path. The current blocking layer 85 may be disposed in one or a plurality of regions, and at least a part of the current blocking layer 85 may overlap the first electrode 91 in the vertical direction.

A support member 99 is formed under the bonding layer 98 and the support member 99 may be formed of a conductive material such as copper-copper, gold-gold, nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), and carrier wafers (e.g., Si, Ge, GaAs, ZnO, SiC and the like). As another example, the support member 99 may be embodied as a conductive sheet.

Here, the substrate of FIG. 17 may be removed from the first conductive type semiconductor layer 41 for a vertical chip. The substrate may be removed by a physical method such as laser lift off or chemical method such as wet etching to expose the first conductivity type semiconductor layer 41. The first electrode 91 is formed on the first conductive type semiconductor layer 41 by performing the isolation etching through the direction in which the substrate is removed. The upper surface of the first conductive semiconductor layer 41 may be formed with a light extraction structure (not shown) such as a roughness. An insulating layer (not shown) may be further disposed on the surface of the semiconductor layer, but the present invention is not limited thereto. Accordingly, a light emitting chip having a vertical electrode structure having the first electrode 91 and the support member 99 under the light emitting structure can be manufactured.

A light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light emitting device according to the embodiment. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment can be implemented in a lighting apparatus including the light emitting element described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: Light emitting element
110: Body
115, 117, 215, 217: Cavity
121, 125, 131, 135, 141, 221,
151: first light emitting chip
153: second light emitting chip
161: First light-transmitting resin layer
163,163A: a second translucent resin layer
170:
180, 180A and 180B: phosphor layers
190: Optical filter

Claims (19)

A plurality of light emitting chips each having a first light emitting chip and a second light emitting chip for emitting first and second light having different peak wavelengths;
And a phosphor layer disposed on the second light emitting chip and exciting a part of a peak wavelength of the second light to emit a peak wavelength of the third light,
Wherein the phosphor layer is disposed on a region different from the first light emitting chip,
Wherein the first light and the second light include light of the same color,
Wherein the second light comprises a longer wavelength than the first light. A plurality of light emitting chips having different peak wavelengths of light of the same color;
A first light-transmissive resin layer disposed on a first light-emitting chip that emits a first light of a relatively short wavelength among the plurality of light-emitting chips and emits the first light without wavelength conversion; And
And a phosphor layer disposed on a second light emitting chip that emits a second light having a relatively long wavelength among the plurality of light emitting chips,
Wherein the plurality of light emitting chips are arranged separately from each other. 3. The method according to claim 1 or 2,
And the light of the same color includes blue light. The method of claim 3,
Wherein a difference in peak wavelength of the first and second light is 10 nm or more. The method of claim 3,
Wherein the phosphor layer comprises a quantum dot. The method of claim 3,
And a body having a plurality of cavities in which the first and second light emitting chips are disposed, respectively. The method according to claim 6,
And a second translucent resin layer in a second cavity in which the second light emitting chip is disposed among the plurality of cavities,
And the second translucent resin layer is disposed between the second light emitting chip and the phosphor layer. The method according to claim 6,
And the phosphor layer is disposed in a second cavity in which the second light emitting chip is disposed among the plurality of cavities. 9. The method of claim 8,
And the phosphor layer is bonded to the second light emitting chip. 9. The method of claim 8,
And the phosphor layer is disposed on a peripheral surface of the second cavity. The method according to claim 6,
Wherein the body includes a barrier portion between the plurality of cavities. 12. The method of claim 11,
Wherein the body includes a stepped structure lower than an upper surface of the body around an upper portion of a second cavity in which the second light emitting chip is disposed,
And the phosphor layer is disposed in the step structure of the second cavity. The method of claim 3,
And the phosphor layer emits green and red light. The method of claim 3,
And an optical filter that reflects the second light emitted from the second light emitting chip on the phosphor layer. 6. The method of claim 5,
Wherein the phosphor layer comprises a transparent tube and a resin layer having quantum dots sealed in the tunable tube. 6. The method of claim 5,
Wherein the phosphor layer comprises a resin layer having quantum dots, a transparent film on at least one of an upper surface and a lower surface of the resin layer, and a side wall around the resin layer. 17. The method of claim 16,
Wherein the side wall comprises a reflective material or a transparent material. The method of claim 3,
Wherein the first and second light emitting chips are connected in series. A circuit board; And
And at least one light emitting element disposed on the circuit board,
Wherein the light emitting element is the light emitting element of claim 3.

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