KR102474519B1 - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, in which a substrate polishing process is performed, comprising: a polishing pad for polishing an upper surface of a substrate; and a polishing head having a membrane in contact with the upper surface of the polishing pad and moving with respect to the substrate. By including, it is possible to obtain an advantageous effect of increasing polishing stability and polishing accuracy.

Description

Substrate processing apparatus {SUBSTRATE PROCESSING APPARATUS}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving polishing stability and polishing uniformity of a substrate.

Recently, interest in information display has increased and the demand for using portable information media has increased. Research and commercialization are being focused on.

In the field of such a flat panel display, until now, a liquid crystal display device (LCD), which is light and consumes less power, has been the most popular display device, but a liquid crystal display is not a light emitting device but a light receiving device, Since there are disadvantages such as ratio and viewing angle, development of a new display device capable of overcoming these disadvantages is being actively developed. Among them, as one of the next-generation displays that have recently been spotlighted, there is an organic light emitting display (OLED).

In general, a glass substrate having excellent strength and transmittance is used in a display device, but since recent display devices are oriented towards slimness and high-pixel, a glass substrate corresponding to this needs to be prepared.

For example, as one of the OLED processes, in the ELA (Eximer Laser Annealing) process in which a laser is injected into amorphous silicon (a-Si) to crystallize it into poly-Si, protrusions may occur on the surface while poly-silicon is crystallized. Since these protrusions can cause mura-effects, the glass substrate must be polished to remove the protrusions.

To this end, recently, various studies have been made to efficiently polish the surface of the substrate, but it is still insufficient, and development thereof is required.

An object of the present invention is to provide a substrate processing apparatus capable of increasing substrate processing efficiency and improving polishing stability and polishing uniformity.

In particular, an object of the present invention is to uniformly polish a substrate according to the surface curvature of the substrate.

In addition, an object of the present invention is to stably maintain the disposition of the polishing pad during the polishing process.

In addition, an object of the present invention is to facilitate replacement of the polishing pad and to simplify the replacement process of the polishing pad.

In addition, an object of the present invention is to improve productivity and yield.

In order to achieve the above objects, the present invention provides a substrate processing apparatus including a polishing pad for polishing an upper surface of a substrate, and a polishing head having a membrane in contact with the upper surface of the polishing pad and moving with respect to the substrate. do.

As described above, according to the present invention, advantageous effects of increasing substrate processing efficiency and improving polishing stability and polishing uniformity can be obtained.

In particular, according to the present invention, it is possible to obtain an advantageous effect of uniformly polishing the substrate by bringing the polishing pad into close contact with the substrate according to the surface curvature of the substrate.

In addition, according to the present invention, advantageous effects of stably maintaining the arrangement of the polishing pad during the polishing process and minimizing slipping and separation of the polishing pad can be obtained.

In addition, according to the present invention, it is possible to easily replace the polishing pad, and advantageous effects of simplifying the polishing pad replacement process and shortening the time required for replacement can be obtained.

In addition, according to the present invention, advantageous effects of improving productivity and yield can be obtained.

1 is a perspective view for explaining a substrate processing apparatus according to the present invention;
2 is a side view for explaining a substrate processing apparatus according to the present invention;
3 is an enlarged view of part 'A' in FIG. 1;
4 is a substrate processing apparatus according to the present invention, a cross-sectional view for explaining a polishing unit;
5 is a substrate processing apparatus according to the present invention, a diagram for explaining a deformation state of a membrane according to surface curvature of a substrate;
6 is a substrate processing apparatus according to the present invention, a view for explaining another embodiment of the polishing pad restraining unit;
7 is an enlarged view of part 'B' of FIG. 6;
8 is a substrate processing apparatus according to the present invention, a view for explaining a polishing pad;
9 is a substrate processing apparatus according to the present invention, a view for explaining another embodiment of a polishing pad restraining unit;
10 is an enlarged view of part 'C' of FIG. 9;
11 is a substrate processing apparatus according to the present invention, a view for explaining a retainer;
12 is a substrate processing apparatus according to the present invention, a plan view for explaining a polishing path of a polishing unit;
13 is a view for explaining a substrate processing apparatus according to another embodiment of the present invention;
14 is a substrate processing apparatus according to the present invention, a view for explaining a preparation stage;
15 is a substrate processing apparatus according to the present invention, a view for explaining another embodiment of a polishing pad;
16 and 17 are a substrate processing apparatus according to the present invention, a diagram for explaining a membrane;
18 is a substrate processing apparatus according to the present invention, a view for explaining the pressing force applied to the polishing pad by the membrane;
19 is a substrate processing apparatus according to the present invention, a diagram for explaining another example of a pressing force applied to a polishing pad by a membrane;
20 is a substrate processing apparatus according to the present invention, a diagram for explaining another example of a pressing force applied to a polishing pad by a membrane;
21 and 22 are diagrams for explaining another embodiment of a membrane as a substrate processing apparatus according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, in the present description, the same numbers refer to substantially the same elements, and descriptions may be made by citing contents described in other drawings under these rules, and contents determined to be obvious to those skilled in the art or repeated contents may be omitted.

1 is a perspective view for explaining a substrate processing apparatus according to the present invention, FIG. 2 is a side view for explaining a substrate processing apparatus according to the present invention, and FIG. 3 is an enlarged view of part 'A' in FIG. 1 . 4 is a substrate processing apparatus according to the present invention, which is a cross-sectional view illustrating a polishing unit, and FIG. 5 is a substrate processing apparatus according to the present invention, which is a diagram illustrating a deformation state of a membrane according to surface curvature of a substrate. to be. Further, FIG. 6 is a substrate processing apparatus according to the present invention, which is a view for explaining another embodiment of the polishing pad restraining part, and FIG. 7 is an enlarged view of part 'B' of FIG. 6 . 8 is a substrate processing apparatus according to the present invention, which is a view for explaining a polishing pad, and FIG. 9 is a substrate processing apparatus according to the present invention, which is a view for explaining another embodiment of a polishing pad restraining part, 10 is an enlarged view of part 'C' of FIG. 9 . 11 is a substrate processing apparatus according to the present invention, which is a view for explaining a retainer, and FIG. 12 is a substrate processing apparatus according to the present invention, which is a plan view illustrating a polishing path of a polishing unit.

1 to 12, the substrate processing apparatus 1010 according to the present invention includes a polishing pad 1220 contacting the upper surface of a substrate W and a membrane 1214 contacting the upper surface of the polishing pad 1220. ) and a polishing head 1210 moving with respect to the substrate (W).

This is to uniformly polish the surface of the substrate even if the surface of the substrate is curved.

That is, when deformation such as bending occurs in the substrate, it is difficult for the polishing pad to come into close contact with the surface of the substrate, thereby reducing the polishing uniformity of the substrate. In particular, when the substrate is bent in a smile shape (a shape in which the edges of both sides of the substrate are raised above the central portion of the substrate), it is difficult for the polishing pad to adhere to the surface of the substrate as a whole, resulting in a decrease in polishing uniformity of the substrate. there is

However, according to the present invention, the bottom plate 1214a of the membrane 1214 and the polishing pad 1220 are deformed (bent) together in response to the surface curvature of the substrate W, thereby forming the polishing pad 1220 on the surface of the substrate. Advantageous effects of improving polishing stability and polishing uniformity of the substrate W can be obtained by making the entire surface adhere to the surface.

In addition, if the arrangement of the polishing pad for polishing the substrate is not kept constant during the polishing process for the substrate, there is a problem in that polishing uniformity and polishing stability of the substrate are deteriorated. In particular, in a method of polishing a substrate by moving a polishing pad having a size smaller than that of the substrate while pressing the polishing pad against the substrate, as the pressing force pressing the polishing pad on the substrate increases, the polishing pad moves away from the polishing head. There is a problem that occurs significantly, and when the pushing (disengagement) of the polishing pad with respect to the polishing head is greater than a certain level, the substrate is damaged or damaged as the polishing head directly contacts the substrate.

However, in the present invention, the polishing pad 1220 is restrained to the polishing head 1210 by the polishing pad restraining part 1230, so that the polishing pad 1220 is stably disposed with respect to the polishing head 1210. Since it can be maintained, it is possible to obtain an advantageous effect of preventing a decrease in polishing stability and polishing uniformity due to pushing of the polishing pad and preventing damage to the substrate.

Above all, the present invention can obtain an advantageous effect of effectively limiting the horizontal movement of the polishing pad 1220 relative to the polishing head 1210 by restraining the polishing head 1210 and the side surface of the polishing pad 1220. .

Furthermore, the present invention simplifies the replacement process of the polishing pad 1220 by selectively maintaining or releasing the coupled state between the polishing head 1210 and the polishing pad 1220, and A beneficial effect of shortening the required time can be obtained.

That is, the polishing pad 1220 for polishing the substrate must be periodically replaced according to a predetermined use time. However, as the time required to replace the polishing pad 1220 increases, the processing efficiency and productivity of the substrate decrease. Therefore, the time required to replace the polishing pad 1220 should be reduced. However, conventionally, as the polishing pad is configured to be fixed to the polishing head by an adhesive, the time required to separate the polishing pad from the polishing head and mount the subsequent polishing pad on the polishing head again increases, which reduces processing efficiency and productivity. There is a problem.

In particular, in the past, as the polishing pad is attached to the polishing head with an adhesive, in order to replace the polishing pad, the polishing pad whose life has expired is forcibly separated from the polishing head, and then the subsequent polishing pad is attached to the polishing head again with an adhesive. There is a problem of having to go through a cumbersome process, and a lot of time is required to replace the polishing pad, which reduces the processing efficiency of the substrate. Moreover, in order to separate the polishing pad attached with the adhesive from the polishing head, an external force must be forcibly applied to the polishing pad to separate the polishing pad from the polishing head. This process is very cumbersome and requires a lot of work time.

In addition, if foreign substances such as adhesives remain on the attachment surface to which the polishing pad is attached in the polishing head, it is difficult for the subsequent polishing pad to be attached parallel to the attachment surface of the polishing head, and the state in which the polishing pad is attached twisted (foreign matter) When polishing is performed on the substrate in a state where the polishing pad is attached to cover the substrate, there is a problem in that polishing uniformity and polishing stability of the substrate are deteriorated.

However, in the present invention, the polishing pad 1220 is coupled to the polishing unit 1200 in a non-adhesive manner without using an adhesive, so that the polishing unit 1200 attaches the polishing pad 1220 to the adhesive surface. foreign substances such as the like can be minimized, and the subsequent polishing pad 1220' (a polishing pad to be replaced) can always be attached to the polishing unit 1200 in a predetermined posture (parallel to the polishing unit). Advantageous effects of improving uniformity and polishing stability can be obtained.

The polishing head 1210 and the polishing pad 1220 are provided to configure the polishing unit 1200 and polish the substrate W mounted on the substrate holder 1100 .

The substrate holding part 1100 is disposed between a loading part (not shown) and an unloading part (not shown), and the substrate W supplied to the loading part is transferred to the substrate holding part 1100 and the substrate holding part ( 1100), and then unloaded through an unloading part.

More specifically, the loading part is provided for loading the substrate W to be polished into the polishing part.

The loading part may be formed in various structures capable of loading the substrate W into the polishing part, and the present invention is not limited or limited by the structure of the loading part.

For example, the loading part includes a plurality of loading and conveying rollers (not shown) disposed spaced apart at predetermined intervals, and the substrate W supplied to the top of the plurality of loading and conveying rollers rotates as the loading and conveying rollers rotate. They are transported cooperatively by two loading and conveying rollers. In some cases, it is also possible that the loading part includes a circulating belt that is circulated and rotated by a loading conveying roller.

In addition, the substrate (W) supplied to the loading part may be aligned in a posture and position determined by an align unit (not shown) before being supplied to the loading part.

For reference, as the substrate W used in the present invention, a rectangular substrate having a length of one side greater than 1 m may be used. For example, as a target substrate on which a chemical mechanical polishing process is performed, a 6th generation glass substrate having a size of 1500 mm * 1850 mm may be used. In some cases, it is also possible to use 7th and 8th generation glass substrates as substrates to be processed. Alternatively, it is also possible that a substrate (for example, a second-generation glass substrate) having a side length of less than 1 m is used.

The substrate holder 1100 and the polishing unit 1200 are provided to form a polishing part between a loading part (not shown) and an unloading part (not shown).

The substrate holding unit 1100 may be provided with various structures capable of holding the substrate W, and the structure and shape of the substrate holding unit 1100 may be variously changed according to required conditions and design specifications.

For example, referring to FIGS. 1 to 13 , the substrate holding unit 1100 is provided on the substrate support unit 1110 and the upper surface of the substrate support unit 1110 and suppresses slip by increasing the coefficient of friction with respect to the substrate W. It includes a surface pad 1120 to do, and the substrate (W) is seated on the upper surface of the pad.

For reference, in the present invention, polishing the substrate (W) is defined as polishing the substrate (W) by a mechanical polishing process or a chemical mechanical polishing (CMP) process on the substrate (W). For example, in the polishing part, while mechanical polishing of the substrate W is performed, slurry for chemical polishing is supplied together and a chemical mechanical polishing (CMP) process is performed. At this time, the slurry may be supplied from an inner region of the polishing pad 1220 (eg, a central portion of the polishing pad) or may be supplied from an outer region of the polishing pad 1220 .

The substrate support 1110 is provided to support the lower surface of the substrate (W).

The substrate support 1110 may be configured to support the substrate W in various ways according to required conditions and design specifications.

Hereinafter, an example in which the substrate support 1110 is formed in a substantially rectangular plate shape will be described. In some cases, the substrate support part may be formed in other shapes and structures, and it is also possible to support the bottom surface of the substrate using two or more substrate support parts.

In addition, a granite plate may be used as the substrate support 1110 . In some cases, the substrate support portion may be formed of a metal material or a porous material, and the present invention is not limited or limited by the material of the substrate support portion.

A surface pad 1120 is provided on the upper surface of the substrate support 1110 to suppress slip by increasing the coefficient of friction with respect to the substrate W.

In this way, the surface pad 1120 is provided on the upper surface of the substrate supporter 1110, and the substrate W is seated on the outer surface of the surface pad 1120, so that the substrate W is formed on the substrate supporter 1110. In the state where it is mounted on, it is possible to restrict the movement of the substrate W relative to the substrate support 1110 (restrain the slip), and an advantageous effect of stably maintaining the position of the substrate W can be obtained.

The surface pad 1120 may be formed of various materials having adhesion to the substrate W, and the present invention is not limited or limited by the material of the surface pad 1120. For example, the surface pad 1120 may be formed using at least one of polyurethane, engineering plastic, and silicone having excellent elasticity and adhesiveness (frictional force). In some cases, it is also possible to form the surface pad with another material having a non-slip function.

In addition, the surface pad 1120 is formed to have a relatively high compressibility. Here, the fact that the surface pad 1120 is formed to have a relatively high compression rate can also be expressed as the surface pad 1120 having a relatively high elongation rate, and the surface pad 1120 is a soft and fluffy material that can be easily compressed. is defined as formed by

Preferably, the surface pad 1120 is formed to have a compression ratio of 20 to 50%. In this way, by forming the surface pad 1120 to have a compression ratio of 20 to 50%, even if a foreign material flows between the substrate W and the surface pad 1120, the surface pad 1120 is easily moved by the thickness of the foreign material. Since it can be compressed, it is possible to minimize the height deviation of the substrate W caused by foreign matter (local protrusion of a specific portion of the substrate W due to the foreign material), and to minimize the local protrusion of a specific portion of the substrate W. An advantageous effect of minimizing deterioration in polishing uniformity can be obtained.

On the other hand, in the embodiments of the present invention described above and illustrated, an example in which the substrate support unit is configured to support the substrate in a contact manner has been described, but in some cases, it is also possible to configure the substrate support unit to support the lower surface of the substrate in a non-contact manner. do.

For example, the substrate support unit may be configured to inject fluid onto the bottom surface of the substrate and support the bottom surface of the substrate (or the bottom surface of the surface pad) by the spraying force of the fluid. At this time, the substrate support unit may inject at least one of gas (eg, air) and liquid (eg, pure water) onto the lower surface of the substrate, and the type of fluid may be varied according to required conditions and design specifications. can be changed.

In some cases, the substrate support may be configured to support the inner surface of the substrate in a non-contact manner using magnetic force (eg, repulsive force) or levitation force by ultrasonic vibration.

The polishing unit 1200 is provided to polish the surface of the substrate W while in contact with the surface of the substrate W.

More specifically, the polishing unit 1200 includes a polishing head 1210 moving with respect to a substrate, a polishing pad 1220 provided under the polishing head 1210 and polishing an upper surface of the substrate, and the polishing head 1210 ) and a polishing pad restraining portion 1230 for restraining the polishing pad 1220 with respect to.

The polishing head 1210 may be formed in various structures capable of pressurizing the polishing pad 1220 while rotating it, and the present invention is not limited or limited by the structure of the polishing head 1210 .

For example, the polishing head 1210 is connected to the main body 1212, the membrane 1214 provided on the lower surface of the main body 1212 and pressing the polishing pad 1220 to the substrate, and the main body 1212. and includes a polishing pad retainer 1216 on which the polishing pad 1220 is mounted.

The body portion 1212 may be composed of a single body or may be composed of a plurality of bodies combined, and is configured to be connected to a drive shaft (not shown) to rotate. In addition, the polishing head 1210 is provided with a pressurizing unit for pressing the polishing pad 1220 on the surface of the substrate W (eg, a pneumatic pressurizing unit that presses the polishing pad with pneumatic pressure).

The membrane 1214 is mounted on the lower surface of the main body 1212 and is provided to transmit a pressing force for pressing the polishing pad 1220 to the substrate W.

Preferably, the membrane 1214 is formed of an elastic flexible material (for example, polyurethane) capable of being deformed to correspond to the surface curvature of the substrate (W).

This is to increase adhesion of the polishing pad 1220 to the substrate W and improve polishing uniformity of the substrate.

That is, when deformation such as bending occurs in the substrate, it is difficult for the polishing pad to come into close contact with the surface of the substrate, thereby reducing the polishing uniformity of the substrate. In particular, a smile-shaped warp may occur in which both side edge portions of the substrate are raised above the central portion of the substrate. When the membrane is formed of a rigid material, surface contact with the bottom surface (bottom plate) of the membrane Since the bottom surface of the polishing pad is always in contact with the surface of the substrate in a flat state, it is difficult to adhere the polishing pad to the substrate according to the surface curvature of the curved substrate. There is a problem that occurs.

However, in the present invention, by forming the membrane 1214 of a flexible material, the membrane 1214 is deformed (bent) in response to the bent state of the substrate W, and the polishing pad 1220 is formed of the substrate W. Since it can adhere to the surface, an advantageous effect of improving polishing stability and polishing uniformity of the substrate can be obtained.

For example, referring to FIG. 5 , when the upper surface of the substrate W is formed in the form of a smile that is convex downward compared to the edge, the membrane 1214 smiles in response to the surface curvature of the substrate W. The polishing pad 1220 pressed by the membrane 1214 also polishes the substrate W while being deformed into a smile shape. In some cases, it is also possible to polish the polishing pad in a state in which the membrane is deformed in a wave shape along the curved surface of the substrate deformed in a wave shape.

The membrane 1214 may be configured to apply pressure to the polishing pad in various ways according to required conditions and design specifications. For example, a pressure chamber is formed above the membrane 1214, and the pressure applied by the polishing pad to the substrate W can be adjusted by adjusting the pressure in the pressure chamber. In some cases, it is also possible to form a sealed air chamber on the top of the membrane and adjust the pressing force by which the polishing pad presses the substrate by the force of the pressurizing unit pressing the air chamber.

More preferably, the membrane 1214 is formed to extend on the bottom plate 1214a contacting the polishing pad 1220 and the upper surface of the bottom plate 1214a to form a plurality of pressure chambers C1-1, C1-2, and C2. -1, C2-2, C2-3) and includes partition walls 1214b (see Fig. 16).

A pressure sensor (not shown) may be provided to each of the plurality of pressure chambers C1-1, C1-2, C2-1, C2-2, and C2-3 to measure pressure. The pressure of each pressure chamber (C1-1, C1-2, C2-1, C2-2, C2-3) can be individually controlled by the control by a pressure controller (not shown), and each pressure chamber (C1 -1, C1-2, C2-1, C2-2, C2-3) to individually (eg, differently) the pressing force for pressing the substrate for each area of the polishing pad 1220. have.

More specifically, the lower surface of the membrane 1214 pressing the polishing pad 1220 is divided into a plurality of pressing areas Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3.

Here, the pressurized regions Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3 refer to the bottom plate divided by the partition wall 1214b and in contact with the upper surface of the polishing pad 1220 ( 1214a), different pressing forces are individually applied to the pressing regions Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3.

The number and size of the pressing areas may be variously changed according to required conditions and design specifications. For example, the bottom plate 1214a forming the lower surface of the membrane 1214 may include five pressing areas Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3. In some cases, it is also possible to configure a membrane including 4 or less or 6 or more pressurized regions.

The barrier rib 1214b may be configured to divide the pressing area in various forms according to required conditions and design specifications. Preferably, the barrier rib 1214b is formed in a ring shape to partition a plurality of pressurized regions Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3 along the radial direction of the membrane 1214. , a plurality of pressing areas are formed in a ring shape. In some cases, it is also possible to configure a plurality of pressing areas to be partitioned along the circumferential direction of the membrane, or to be partitioned in a lattice form or other forms.

Therefore, by the air pressure supplied from the pressure regulator (not shown) to each of the pressure chambers C1-1, C1-2, C2-1, C2-2, and C2-3, the radial direction of the membrane 1214 Pressing force may be applied to the polishing pad 1220 with a pressure deviation to . By applying different pressing forces to the polishing pad 1220 along the radial direction of the membrane 1214 , thickness variation in the radial direction of the substrate 1010 may be eliminated. For example, in a state in which the thickness distribution of the entire plate surface of the substrate 1010 is obtained, the pressure applied to the pressure chamber is applied to the region where the thickness of the substrate is larger than that of the region where the thickness of the substrate is measured to be smaller. With larger adjustments, the overall thickness of the substrate can be accurately adjusted to the desired distribution shape.

The polishing pad retainer 1216 is connected to the body portion 1212 and is provided to mount the polishing pad 1220 thereon.

The polishing pad retainer 1216 may be provided in various positions and shapes to which the polishing pad 1220 can be coupled according to required conditions and design specifications.

For example, the polishing pad retainer 1216 is formed in a ring shape on the outside of the membrane 1214 along the circumference of the membrane 1214 and connected to the side surface of the body portion 1212 . In some cases, the polishing pad retainer may be partially formed along the circumference of the membrane 1214 or connected to the upper surface of the body portion 1212 .

The polishing pad restraining unit 1230 is provided to restrain the polishing pad 1220 with respect to the polishing head 1210 . More specifically, the polishing pad restraining part 1230 is provided to limit horizontal movement of the polishing pad relative to the polishing head.

This is to increase the stability of the arrangement of the polishing pad 1220 and to improve the stability and uniformity of polishing the substrate W.

That is, if the arrangement of the polishing pad for polishing the substrate is not kept constant during the polishing process for the substrate, there is a problem in that polishing uniformity and polishing stability of the substrate are deteriorated. In particular, in a method of polishing a substrate by moving a polishing pad having a size smaller than that of the substrate while pressing the polishing pad against the substrate, as the pressing force pressing the polishing pad on the substrate increases, the polishing pad moves away from the polishing head. There is a problem that occurs significantly, and when the pushing (disengagement) of the polishing pad with respect to the polishing head is greater than a certain level, the substrate is damaged or damaged as the polishing head directly contacts the substrate.

However, in the present invention, the polishing pad 1220 is restrained to the polishing head 1210 by the polishing pad restraining part 1230, so that the polishing pad 1220 is stably disposed with respect to the polishing head 1210. Since it can be maintained, it is possible to obtain an advantageous effect of preventing a decrease in polishing stability and polishing uniformity due to pushing of the polishing pad and preventing damage to the substrate.

Above all, the present invention can obtain an advantageous effect of effectively limiting the horizontal movement of the polishing pad 1220 relative to the polishing head 1210 by restraining the polishing head 1210 and the side surface of the polishing pad 1220. .

The polishing pad restraining portion 1230 may be formed in various structures capable of restraining the polishing pad 1220 with respect to the polishing pad retainer 1216 .

For example, referring to FIGS. 1 to 3 , the polishing pad restraining unit 1230 restrains the side surface of the polishing pad 1220 and the polishing head 1210, and the polishing pad 1220 for the polishing head 1210 Includes a restraining member 1231 for limiting the horizontal movement of.

More specifically, the restraining member 1231 is provided to restrain the lateral surface of the polishing pad 1220 and the lateral surface of the polishing pad retainer 1216 .

At this time, the restraining member 1231 may be formed in various structures capable of restraining the side surfaces of the polishing pad 1220 and the polishing pad retainer 1216 . For example, the restraining member 1231 is formed in a ring shape along the circumference of the polishing pad retainer 1216 .

In this way, the restraining member 1231 is formed in a ring shape, and the restraining member 1231 is arranged to surround the entire circumference of the polishing pad 1220, thereby extending the polishing pad 1220 along the radial direction ( Since all movements of the 1220 may be limited, an advantageous effect of more stably limiting the movement of the polishing pad 1220 relative to the polishing head 1210 may be obtained.

Furthermore, the polishing pad retainer 1216 and the polishing pad 1220 are inserted into the ring-shaped restraining member 1231, and the outer surface of the polishing pad 1220 and the polishing pad retainer are formed on the inner surface of the restraining member 1231. The outer surface of 1216 is in contact with each other and the polishing pad 1220 and the polishing pad retainer 1216 are constrained to each other, so that the restraining member 1231 is placed on the side surface of the polishing pad 1220 or the polishing pad retainer 1216. The use of a separate fixing member for fixing to the side of the can be eliminated, and advantageous effects of simplifying the mounting process of the restraining member 1231 and shortening the mounting time can be obtained.

In some cases, a plurality of restraining members (for example, three restraining members disposed at intervals of 120 degrees) are provided spaced apart along the circumference of the polishing pad retainer, and the polishing pad is pushed against the polishing head by the plurality of restraining members It is also possible to make it constrained.

As another example, referring to FIGS. 6 and 7 , the polishing pad restraining part 1230 forms an attractive force (AF) between the polishing pad retainer 1216 and the polishing pad 1220 to prevent the polishing pad retainer 1216 ) and the polishing pad 1220 may be combined.

The polishing pad restraining part 1230 may be formed in various structures capable of forming mutual attraction between the polishing pad retainer 1216 and the polishing pad 1220 . More specifically, the polishing pad restraining unit 1230 is provided on the bottom surface of the polishing pad retainer 1216 so as to face the first magnetic body 1232 provided on the upper surface of the polishing pad 1220 and the first magnetic body 1232. The polishing pad retainer 1216 and the polishing pad 1220 are coupled by mutual attraction AF (electromagnetic force) between the first magnetic body 1232 and the second magnetic body 1234. .

The mutual attraction AF between the first magnetic body 1232 and the second magnetic body 1234 may be formed in various ways. For example, at least one of the first magnetic body 1232 and the second magnetic body 1234 may be formed as an electromagnet or permanent magnet capable of forming mutual attraction AF. In some cases, it is also possible to form an attractive force using a magnet and a metal.

Hereinafter, an example in which the second magnetic body 1234 is formed of an electromagnet and the second magnetic body 1234 is formed of a permanent magnet will be described. In this way, when power is applied to the second magnetic body 1234 made of an electromagnet, the polishing pad 1220 is moved by the mutual attraction AF between the first magnetic body 1232 and the second magnetic body 1234, and the polishing pad retainer 1216 ) is fixed at On the other hand, when the power supply to the second magnetic body 1234 is stopped, the mutual attraction between the first magnetic body 1232 and the second magnetic body 1234 is released.

Therefore, when the polishing pad 1220 is replaced, the supply of power to the second magnetic material 1234 is stopped without a separate separation process for forcibly separating the polishing pad 1220 from the polishing pad retainer 1216. The polishing pad 1220 can be easily separated from the polishing pad retainer 1216 .

Preferably, the first magnetic body 1232 and the second magnetic body 1234 are formed in a ring shape along the circumferential direction of the polishing pad retainer 1216 . In this way, the first magnetic body 1232 and the second magnetic body 1234 are each formed in a ring shape, and the polishing pad retainer 1216 and the polishing pad 1220 are continuously formed along the circumferential direction of the polishing pad retainer 1216. By being coupled, an advantageous effect of more stably maintaining a coupled state between the polishing pad retainer 1216 and the polishing pad 1220 can be obtained.

As another example, referring to FIGS. 9 and 10 , the polishing pad restraining part 1230 ′ applies suction pressure from the polishing pad retainer 1216 to the polishing pad 1220 so that the polishing pad retainer 1216 and the polishing pad Combine (1220).

More specifically, the polishing pad restraining portion 1230' is formed on the bottom surface of the polishing pad retainer 1216 and includes a suction hole 1218 to which suction pressure (vacuum pressure) is applied.

In this case, a plurality of suction holes 1218 may be formed to be spaced apart along the circumferential direction of the polishing pad retainer 1216 . In some cases, it is also possible to form the suction hole 1218 in a continuous ring shape along the circumferential direction of the polishing pad retainer 1216 .

In this way, when vacuum pressure is applied to the suction hole 1218, the polishing pad 1220 is adsorbed and fixed to the polishing pad retainer 1216 by the suction force VF formed in the suction hole 1218. On the other hand, when the supply of vacuum pressure to the suction hole 1218 is stopped, the polishing pad 1220 is separated from the polishing pad retainer 1216 .

Therefore, when the polishing pad 1220 is replaced, the supply of vacuum pressure to the suction hole 1218 is stopped without a separate separation process for forcibly separating the polishing pad 1220 from the polishing pad retainer 1216. The polishing pad 1220 can be easily separated from the polishing pad retainer 1216 .

Also, referring to FIG. 10 , a guide protrusion 1228 accommodated in a suction hole 1218 may protrude from the polishing pad 1220 .

At this time, a plurality of guide protrusions 1228 may be formed to correspond to the plurality of suction holes 1218, or may be configured to be accommodated only in some of the plurality of suction holes. In some cases, it is also possible to form the guide protrusion in a ring shape.

In this way, by forming guide protrusions 1228 on the upper surface of the polishing pad 1220 and allowing the guide protrusions 1228 to be accommodated in the suction holes 1218, the polishing pad for the polishing unit 1200 during the polishing process. An advantageous effect of constraining the horizontal movement of 1220 can be obtained.

Preferably, a tapered portion 1228a is formed at an angle at an upper end of the guide protrusion 1228, and the polishing head 1210 moves along the taper portion 1228a to align the guide protrusion 1228 and the suction hole 1218. let it

Here, the taper portion 1228a aligns the guide protrusion 1228 and the suction hole 1218, which means that when the guide protrusion 1228 enters the suction hole 1218, the guide protrusion 1228 and the suction hole ( 1218) is defined as adjusting the horizontal position of the polishing unit 1200 relative to the polishing pad 1220 (or the horizontal position of the polishing pad relative to the polishing unit) to move to a position where the polishing pad 1220 is coaxially disposed.

In this way, the tapered portion 1228a is formed at the top of the guide protrusion 1228, and the inlet end of the suction hole 1218 moves along the tapered portion 1228a, and the suction hole 1218 and the guide protrusion 1228 By coaxially disposing, it is possible to obtain an advantageous effect of allowing the guide protrusion 1228 to enter the inside of the suction hole 1218 more smoothly.

As described above, the polishing pad 1220 is mounted on the polishing pad retainer 1216 of the polishing head 1210, rotates while being in contact with the surface of the substrate W, and linearly polishes the surface of the substrate W ( flatten).

The polishing pad 1220 is formed of a material suitable for mechanical polishing of the substrate (W). For example, the polishing pad 1220 may be made of polyurethane, polyurea, polyester, polyether, epoxy, polyamide, polycarbonate, polyethylene, polypropylene, fluoropolymer, vinyl polymer, acrylic and methacrylic polymer, It can be formed using silicone, latex, nitrated rubber, isoprene rubber, butadiene rubber, and various copolymers of styrene, butadiene, and acrylonitrile, and the material and characteristics of the polishing pad 1220 are determined according to the required conditions and design specifications. It can be varied in various ways.

Preferably, a circular polishing pad 1220 having a smaller size than the substrate W is used as the polishing pad 1220 . That is, it is possible to polish the substrate using a polishing pad having a larger size than the substrate W, but when using a polishing pad having a larger size than the substrate, a very large rotation equipment and space are required to rotate the polishing pad. Since space efficiency and design freedom are reduced and stability is deteriorated, it is preferable to use a polishing pad 1220 having a size smaller than that of the substrate (W). More preferably, the polishing pad 1220 is formed to have a diameter corresponding to the horizontal or vertical length of the substrate (W), or to have a diameter smaller than 1/2 of the horizontal or vertical length of the substrate (W). can

Substantially, since the length of at least one side of the substrate W has a size greater than 1 m, rotating a polishing pad having a size greater than that of the substrate W (eg, a polishing pad having a diameter greater than 1 m) There is a problem in itself that is very difficult. In addition, when a non-circular polishing pad (eg, a rectangular polishing pad) is used, the entire surface of the substrate W polished by the rotating polishing pad cannot be polished to a uniform thickness. However, the present invention, by rotating the circular polishing pad 1220 having a smaller size than the substrate W to polish the surface of the substrate W, the polishing pad ( It is possible to polish the substrate W by rotating the 1220, and an advantageous effect of maintaining a uniform polishing amount by the polishing pad 1220 as a whole can be obtained.

More specifically, referring to FIG. 8 , the polishing pad 1220 includes a polishing plate part 1222 in contact with a substrate, and an edge coupling plate part 1224 formed at an edge of the polishing plate part 1222 and coupled to the polishing head 1210. ).

The polishing plate portion 1222 is formed in a circular shape corresponding to the membrane 1214, and the edge coupling plate portion 1224 is formed in a ring shape corresponding to the polishing pad retainer 1216.

For reference, during the polishing process, the polishing plate part 1222 is in close contact with the substrate, and the edge bonding plate part 1224 does not contact the substrate. In some cases, it is also possible that the edge coupling plate 1224 contacts the substrate during the polishing process without applying a pressing force to the substrate.

In this case, the polishing plate portion 1222 and the edge coupling plate portion 1224 of the polishing pad 1220 may be formed of the same material or different materials.

Preferably, the polishing plate portion 1222 and the edge coupling plate portion 1224 of the polishing pad 1220 are formed of different materials, but the edge coupling plate portion 1224 is formed of a material having a higher hardness than the polishing plate portion 1222. .

This is to maintain a more stable coupling state of the polishing pad 1220 to the polishing unit 1200 .

That is, it is also possible to form both the edge coupling plate portion 1224 and the abrasive plate portion 1222 with a flexible material (for example, polyurethane). However, as the edge coupling plate portion 1224 is formed of a flexible material, if a floating or bending phenomenon occurs in the edge coupling plate portion 1224 during the polishing process, the edge coupling plate portion 1224 and the polishing pad retainer 1216 There is a problem in that it is difficult to maintain the bonded state stably.

Therefore, the present invention suppresses the deformation of the edge coupling plate portion 1224 and combines the edge coupling plate portion 1224 by forming the edge coupling plate portion 1224 with a hard material having a higher hardness than the abrasive plate portion 1222. An advantageous effect of maintaining a stable state can be obtained. In some cases, it is also possible to attach a reinforcing member having high hardness to the edge coupling plate portion.

In addition, referring to FIG. 7 , a fixing protrusion 1226 is formed on the upper surface of the edge coupling plate unit 1224 to protrude, and the fixing protrusion 1226 is accommodated on the lower surface of the polishing pad retainer 1216 of the polishing unit 1200. A fixing groove 1217 may be formed.

In this way, the fixing protrusion 1226 is formed on the upper surface of the edge coupling plate portion 1224, and the fixing protrusion 1226 is accommodated in the fixing groove 1217 formed on the bottom surface of the polishing pad retainer 1216, thereby polishing During the process, an advantageous effect of more reliably restraining the horizontal movement of the polishing pad 1220 relative to the polishing unit 1200 can be obtained.

Also, a friction pad (not shown) may be provided on an upper surface of the polishing pad 1220 contacting the polishing unit 1200 to suppress slip by increasing a coefficient of friction with respect to the polishing unit 1200 .

In this way, the polishing pad 1220 is attached to the polishing unit 1200 by providing a friction pad on the upper surface of the polishing pad 1220 and bringing the membrane 1214 of the polishing unit 1200 into contact with the friction pad. In this state, the movement of the polishing pad 1220 relative to the membrane 1214 can be suppressed (slip is restricted), and an advantageous effect of stably maintaining the position of the polishing pad 1220 can be obtained.

The friction pad may be formed of various materials having bonding properties with the membrane 1214 of the polishing unit 1200, and the present invention is not limited or limited by the material of the friction pad. For example, the friction pad may be formed using at least one of polyurethane, engineering plastic, and silicone having excellent elasticity and adhesiveness (frictional force). In some cases, it is also possible to form the friction pad with another material having a non-slip function.

The polishing unit 1200 is configured to move along the X-axis direction and the Y-axis direction by the gantry unit 1020 .

More specifically, the gantry unit 1020 includes an X-axis gantry 1022 that linearly moves along the X-axis direction, and a Y-axis direction mounted on the X-axis gantry 1022 that is orthogonal to the X-axis direction. A Y-axis gantry 1024 is included, and the polishing unit 1200 is mounted on the Y-axis gantry 124 and polishes the substrate W while moving along the X-axis direction and the Y-axis direction.

The X-axis gantry 1022 may be formed in a “U” shape and is configured to move along a guide rail 1022a disposed along the X-axis direction. N-pole and S-pole permanent magnets are alternately arranged on the guide rail 1022a, and the X-axis gantry 1022 is a linear motor capable of precise position control by controlling the current applied to the coil of the X-axis gantry 1022. principle can be driven.

At this time, the polishing path of the polishing unit 1200 may be variously changed according to required conditions and design specifications.

For example, referring to FIG. 12 , the polishing pad 1220 includes a first oblique path L1 inclined with respect to one side of the substrate W and a second oblique path inclined in the opposite direction of the first oblique path L1. It is configured to polish the surface of the substrate W while repeatedly moving zigzag along the path L2.

Here, the first oblique path L1 means a path inclined at a predetermined angle θ with respect to the lower side of the substrate W, for example. In addition, the second oblique path L2 means a path inclined at a predetermined angle toward the opposite direction of the first oblique path L1 so as to intersect the first oblique path L1.

Further, in the present invention, the repetitive zigzag movement of the polishing pad 1220 along the first oblique path L1 and the second oblique path L2 means that the polishing pad 1220 contacts the surface of the substrate W. It is defined that the moving path of the polishing pad 1220 with respect to the substrate W is not interrupted and is switched to the other direction (converted from the first oblique path to the second oblique path) while moving in the moved state. In other words, the polishing pad 1220 continuously moves along the first oblique path L1 and the second oblique path L2 and forms a continuous wave-shaped movement trajectory.

More specifically, the first oblique path L1 and the second oblique path L2 are axisymmetric with respect to one side of the substrate W, and the polishing pad 1220 has the first oblique path L1 and the second oblique path L1. The surface of the substrate (W) is polished while repeatedly moving zigzag along (L2). At this time, when the first oblique path L1 and the second oblique path L2 are said to be line symmetric with respect to one side of the substrate W, the first oblique path L1 with one side 111 of the substrate W as the center. ) and the second oblique path L2 are symmetrical, this means that the first oblique path L1 and the second oblique path L2 completely overlap, and one side of the substrate W and the first oblique path L1 ) is defined as the same as the angle formed by one side of the substrate W and the second oblique path L2.

Preferably, the polishing pad 1220 is formed on the substrate W along the first oblique path L1 and the second oblique path L2 with a reciprocating pitch having a length equal to or smaller than the diameter of the polishing pad 1220. round trip about Hereinafter, the polishing pad 1220 has a length equal to the diameter of the polishing pad 1220 as the reciprocating pitch P, and along the first oblique path L1 and the second oblique path L2 with respect to the substrate W An example of regular round-trip movement will be described.

At this time, the polishing unit 1200 may be configured to move linearly by a structure (not shown) such as a gantry, and the present invention is limited by the type and structure of the structure that moves the polishing unit 1200, or It is not limited. For example, the gantry is disposed on both sides of the substrate W with the substrate W interposed therebetween, and includes a first support shaft and a second support shaft provided to be linearly movable along the transfer direction of the substrate W, and the first A connection shaft connecting the support shaft and the second support shaft may be included, and the polishing unit 1200 may be mounted on the connection shaft.

In this way, the surface of the substrate W is polished while the polishing pad 1220 repeatedly zigzag moves along the first oblique path L1 and the second oblique path L2 with respect to the substrate W, and the polishing pad ( 1220 moves forward with respect to the substrate W at a reciprocating pitch P at a length equal to or smaller than the diameter of the polishing pad 1220, thereby removing the polishing pad 1220 over the entire surface area of the substrate W. ) can obtain an advantageous effect of regularly and uniformly polishing the entire surface of the substrate W without an area where polishing is omitted.

Here, the forward movement of the polishing pad 1220 with respect to the substrate W means that the polishing pad 1220 moves with respect to the substrate W along the first oblique path L1 and the second oblique path L2. while moving in a straight line toward the front of the substrate W (eg, from the lower side of the substrate to the upper side with reference to FIG. 12 ). In other words, taking a right triangle composed of the base, the hypotenuse, and the opposite side, for example, the base of the right triangle is defined as the base of the substrate W, and the hypotenuse of the right triangle is the first oblique path L1 or the second oblique path ( L2), and the opposite side of the right triangle may be defined as the forward movement distance of the polishing pad 1220 with respect to the substrate (W).

In other words, the polishing pad 1220 is repeatedly zigzag-moved (moved along the first oblique path and the second oblique path) with respect to the substrate W at a length equal to or smaller than the diameter of the polishing pad 1220 as the reciprocating movement pitch. ) while polishing the substrate W, it is possible to prevent the occurrence of an area in which the polishing by the polishing pad 1220 is omitted in the entire surface area of the substrate W, and thus the thickness deviation of the substrate W It is possible to obtain an advantageous effect of improving polishing quality by uniformly controlling the thickness distribution of the substrate W and adjusting the thickness distribution of the substrate W uniformly with respect to the two-dimensional plate surface.

As another example, the polishing pad 1220 repeatedly zigzags along a first straight path (not shown) along one side of the substrate W and along a second straight path (not shown) opposite to the first straight path. It is also possible to polish the surface of the substrate W while moving.

Here, the first straight path means a path along a direction from one end of the lower side of the substrate W to the other end, for example. In addition, the second straight path means a path heading in the opposite direction to the first straight path.

For reference, in the above and illustrated embodiments of the present invention, the polishing part is described as an example consisting of only one polishing unit 1200, but in some cases, it is possible for the polishing part to include two or more polishing units. do. For example, an abrasive part may include two or more abrasive units. In this case, each of the polishing pads of the plurality of polishing units may be constrained to the polishing head by the polishing pad restraining part.

In addition, the substrate processing apparatus may include a conditioner (not shown) that modifies the outer surface (surface in contact with the substrate W) of the polishing pad 1220 .

For example, the conditioner may be disposed on the outer region of the substrate W, pressurize the surface (bottom surface) of the polishing pad 1220 with a predetermined pressing force, and finely cut the polishing pad 1220 to form micropores on the surface of the polishing pad 1220. modified to come out on the surface. In other words, the conditioner finely cuts the outer surface of the polishing pad 1220 so that the numerous micropores that serve to contain the slurry in which the abrasive and the chemical are mixed are not clogged on the outer surface of the polishing pad 1220. The slurry filled in the foam pores of 1220 is smoothly supplied to the substrate (W). Preferably, the conditioner is rotatably provided and rotates in contact with the outer surface (bottom surface) of the polishing pad 1220 .

Also, referring to FIG. 11 , the polishing part includes a retainer 1130 protruding from the outer surface of the surface pad 1120 so as to surround the circumference of the substrate W.

The retainer 1130 is polished at the edge of the substrate W when the polishing pad 1220 of the polishing unit 1200 enters the inner area of the substrate W from the outer area of the substrate W during the polishing process. Minimizes the rebound phenomenon (bouncing phenomenon) of the pad 1220 and creates a dead zone at the edge of the substrate W due to the rebound phenomenon of the polishing pad 1220 (polishing by the polishing pad area) is provided to minimize.

More specifically, a substrate accommodating portion 1130a corresponding to the shape of the substrate W is formed through the retainer 1130, and the substrate W extends from the inside of the substrate accommodating portion 1130a to the outside of the surface pad 1120. settles on the surface

In a state where the substrate W is accommodated in the substrate accommodating portion 1130a, the height of the surface of the retainer 1130 is similar to that of the edge of the substrate W. In this way, by making the edge of the substrate W and the outer region of the substrate W (region of the retainer 1130) adjacent to the edge of the substrate W have a similar height to each other, the polishing pad during the polishing process 1220 moves from the outer region of the substrate W to the inner region of the substrate W, or moves from the inner region of the substrate W to the outer region of the substrate W, while moving from the inner region of the substrate W to the outer region of the substrate W. A rebound phenomenon of the polishing pad 1220 due to a height difference between the inner and outer regions may be minimized, and an advantageous effect of minimizing the occurrence of non-polishing regions due to the rebound phenomenon may be obtained.

In addition, the retainer 1130 protrudes from the surface of the substrate holder 1100 on which the substrate W is mounted, and the polishing pad 1220 of the polishing unit 1200 is connected to the upper surface of the retainer 1130 and the substrate (W). ) passing through the edge of the substrate (W) in a state of contact with the upper surface of the substrate (W) and polishing the upper surface of the substrate (W).

Preferably, at the polishing start position where the polishing process of the substrate W by the polishing pad 1220 of the polishing unit 1200 starts, a part of the polishing pad 1220 is in contact with the upper surface of the retainer 1130, and polishing Another part of the pad 1220 is placed in contact with the upper surface of the substrate (W).

In this way, polishing is started in a state in which the polishing pad 1220 of the polishing unit 1200 is in contact with the upper surface of the substrate W and the upper surface of the retainer 1130 simultaneously at the polishing start position, so that the polishing unit 1200 When the polishing pad 1220 of ) passes through the edge of the substrate W, an advantageous effect of more suppressing a phenomenon in which the polishing pad 1220 rebounds from the substrate W can be obtained.

Preferably, the retainer 1130 is formed to have a thickness (T1≥T2) that is thinner than or equal to the substrate (W). In this way, by forming the retainer 1130 to have a thickness T2 that is equal to or thinner than the substrate W, the polishing pad 1220 moves from the outer region of the substrate W to the inner region of the substrate W. During this process, an advantageous effect of preventing a rebound phenomenon due to collision between the polishing pad 1220 and the retainer 1130 may be obtained.

The retainer 1130 may be formed of various materials depending on required conditions. However, since the polishing pad 1220 is in contact with the retainer 1130, it is preferable to form the retainer 1130 with a material such as polyethylene (PE) or unsaturated polyester (UPE), which is relatively less abrasive during the polishing process. direct

Meanwhile, the unloading part is provided to unload the polished substrate W from the polishing part.

The unloading part may be formed in various structures capable of unloading the substrate W from the polishing part, and the present invention is not limited or limited by the structure of the unloading part.

For example, the unloading part includes a plurality of unloading conveying rollers (not shown) disposed spaced apart at predetermined intervals, and the substrate W supplied on top of the plurality of unloading conveying rollers has an unloading conveying roller. As it rotates, it is transported cooperatively by a plurality of unloading conveying rollers. In some cases, it is also possible that the unloading part includes a circulating belt circulating and rotating by an unloading conveying roller.

Meanwhile, FIG. 13 is a diagram for explaining a substrate processing apparatus according to another embodiment of the present invention, and FIG. 14 is a substrate processing apparatus according to the present invention, and is a diagram for explaining a preparation stage. In addition, the same or equivalent reference numerals are given to the same or equivalent parts as the above-described configuration, and a detailed description thereof will be omitted.

Referring to FIG. 13 , according to another embodiment of the present invention, a substrate processing apparatus includes a transfer belt 1120' moving along a predetermined path and having a substrate W mounted on an outer surface thereof, and a transfer belt 1120'. A substrate support 1110 disposed inside and supporting the lower surface of the substrate W with a transfer belt 1120' interposed therebetween, and a polishing unit moving with respect to the substrate W and polishing the upper surface of the substrate W. (1200).

The transfer belt 1120' may be configured to move along a predetermined path in various ways according to required conditions and design specifications. For example, the transfer belt 1120' may be configured to circulate and rotate along a predetermined path.

Circulating rotation of the transfer belt 1120' may be performed in various ways depending on required conditions and design specifications. For example, the conveying belt 1120' is circularly rotated along a path determined by the roller unit 1150, and the substrate W seated on the conveying belt 1120' is circulated by the circular rotation of the conveying belt 1120'. It is conveyed along this linear movement path.

A moving path (eg, a circulation path) of the transfer belt 1120' may be variously changed according to required conditions and design specifications. For example, the roller unit 1150 includes a first roller 1152 and a second roller 1154 disposed horizontally spaced apart from the first roller 1152, and the conveying belt 1120' includes the first roller 1152 and the second roller 1154 circularly rotate in an infinite loop manner.

For reference, the outer surface of the transfer belt 1120' means an outer surface exposed to the outside of the transfer belt 1120', and the substrate W is seated on the outer surface of the transfer belt 1120'. . In addition, the inner surface of the transfer belt 1120' means the inner surface of the transfer belt 1120' on which the first roller 1152 and the second roller 1154 come into contact.

In addition, any one or more of the first roller 1152 and the second roller 1154 may be selectively configured to linearly move in directions approaching and spaced apart from each other. For example, the second roller 1154 to which the first roller 1152 is fixed may linearly move in a direction approaching and separating from the first roller 1152 . In this way, the tension of the transfer belt 1120' can be adjusted by allowing the second roller 1154 to approach and be separated from the first roller 1152 according to manufacturing tolerances and assembly tolerances.

Here, adjusting the tension of the transfer belt 1120' is defined as adjusting the tension by pulling or loosening the transfer belt 1120'. In some cases, it is also possible to provide a separate tension control roller and adjust the tension of the transport belt by moving the tension control roller. However, it is preferable to move at least one of the first roller and the second roller to improve structure and space utilization.

In the past, in order to load the substrate supplied to the loading part into the polishing part, a separate pick-up device (eg, substrate adsorption device) was used to pick up the substrate from the loading part, and then the substrate had to be put down on the polishing part again. Therefore, there is a problem in that the processing time increases to the extent that it takes several seconds to several tens of seconds to load the substrate. Moreover, conventionally, in order to unload the polished substrate to the unloading part, a separate pick-up device (eg, substrate adsorption device) is used to pick up the substrate from the polishing part, and then the substrate is returned to the unloading part. Since it had to be put down, there is a problem in that the processing time increases to the extent that the time required to unload the substrate takes several seconds to several tens of seconds.

However, in the present invention, in a state in which the substrate W supplied to the loading part is directly transferred to the conveying belt 1120′ that rotates, the polishing process is performed on the substrate W, and the substrate W is transferred to the conveying belt ( 1120'), an advantageous effect of simplifying the processing process of the substrate W and shortening the processing time can be obtained by directly transferring the substrate W to the unloading part.

In addition, the present invention eliminates a separate pick-up process when loading and unloading the substrate (W), and processes the substrate (W) in an in-line manner using a circulating and rotating transfer belt (1120'). Advantageous effects of simplifying the loading time and unloading process of the substrate (W) and shortening the time required for loading and unloading the substrate (W) can be obtained.

Moreover, in the present invention, since there is no need to provide a pick-up device for picking up the substrate (W) during loading and unloading of the substrate (W), equipment and facilities can be simplified, and advantageous effects of improving space utilization are achieved. can be obtained.

As another example of the conveying belt, the conveying belt may be wound from one direction to the other and may be configured to convey the substrate W (not shown).

Here, the fact that the transport belt is wound from one direction to the other means that the transport belt is wound in a reel-to-reel winding method (wound on the first reel and then on the second reel in the opposite direction) of a conventional cassette tape. It is defined as moving (winding) along the movement trajectory in the form of an open loop in a way that is wound by).

Also, referring to FIGS. 1 and 14 , according to another embodiment of the present invention, a substrate processing apparatus is disposed outside the substrate holder 1100 and prepares a subsequent polishing pad 1220' (1300). ) may be included.

In the preparation stage 1300, a subsequent polishing pad 1220' to be replaced is prepared. For example, the preparation stage 1300 may be provided to be able to move up and down in the vertical direction, and a subsequent polishing pad 1220' is provided on the upper surface of the preparation stage 1300.

The used polishing pad 1220 is separated from the polishing unit 1200 and discarded, and as the polishing unit 1200 approaches the upper surface of the preparation stage 1300, the subsequent polishing pad 1220' is placed in the polishing pad restraining portion. By 1230, it is coupled and restrained to the polishing pad retainer.

Meanwhile, FIG. 15 is a substrate processing apparatus according to the present invention, which is a view for explaining another embodiment of a polishing pad. In addition, the same or equivalent reference numerals are given to the same or equivalent parts as the above-described configuration, and a detailed description thereof will be omitted.

Referring to FIG. 15, according to another embodiment of the present invention, a polishing pad 1220' is integrally protruded from a polishing plate portion 1222' contacting a substrate W and the polishing plate portion 1222', and polishes the polishing pad 1220'. and a restricting portion 1224' constrained to the polishing head 1210 for moving the plate portion 1222'.

More specifically, the restraining portion 1224' is integrally formed to protrude from the polishing plate portion 1222' and is provided to restrain the side surface of the polishing pad retainer 1216.

In this case, the restraining portion 1224' may be integrally protruded from the polishing plate portion 1222' and formed in various structures capable of restraining the side surface of the polishing pad retainer 1216. For example, the restraining portion 1224' is formed in a ring shape along the circumference of the polishing pad retainer 1216.

In this way, by forming the restricting portion 1224' in a ring shape and disposing the restricting portion 1224' to surround the entire circumference of the polishing pad retainer 1216, Since all movements of the polishing pad 1220' can be limited, an advantageous effect of more stably limiting the movement of the polishing pad 1220' relative to the polishing head 1210 can be obtained.

Furthermore, the polishing pad retainer 1216 is inserted into a pocket (space) formed inside the ring-shaped restraining portion 1224', so that the outer surface of the polishing pad retainer 1216 is formed on the inner surface of the restraining portion 1224'. The use of a separate fixing member for fixing the restraining portion 1224' to the side surface of the polishing pad retainer 1216 is eliminated by making the polishing pad 1220' and the polishing pad retainer 1216 restrain each other while in contact with each other It is possible to obtain an advantageous effect of simplifying the mounting process of the restraining unit and shortening the mounting time.

In some cases, a plurality of restraining parts (for example, three restraining parts disposed at intervals of 120 degrees) are provided spaced apart along the circumference of the polishing plate unit, and the pushing of the polishing pad against the polishing head is prevented by the plurality of restraining parts. It is also possible to bind them.

Preferably, the abrasive plate portion 1222' of the polishing pad 1220' and the restricting portion are formed of different materials, and the restricting portion 1224' is formed of a material having a higher hardness than the abrasive plate portion 1222'. For example, the abrasive plate portion 1222' and the restraining portion 1224' may be formed by double injection molding.

This is to maintain a more stable coupling state of the polishing pad 1220' to the polishing unit 1200.

That is, it is also possible to form both the abrasive plate portion and the restraining portion with a flexible material (for example, polyurethane). However, since the restraining part is made of a flexible material, when floating or bending occurs in the restraining part during the polishing process, it is difficult to stably maintain the bonding state of the polishing pad to the polishing unit.

Therefore, the present invention suppresses the deformation of the restraining part 1224' by forming the restraining part 1224' with a hard material having a higher hardness than the abrasive plate part 1222', and It is possible to obtain an advantageous effect of stably maintaining the confined state by

Meanwhile, FIGS. 16 and 17 are a substrate processing apparatus according to the present invention, which is a view for explaining a membrane, and FIG. 18 is a substrate processing apparatus according to the present invention, which is a diagram for explaining a pressing force applied to a polishing pad by a membrane. it is a drawing 19 is a substrate processing apparatus according to the present invention, which is a view for explaining another example of a pressing force applied to a polishing pad by a membrane, and FIG. 20 is a substrate processing apparatus according to the present invention, which is applied to a polishing pad by a membrane It is a drawing for explaining another example of the pressing force applied to. In addition, the same or equivalent reference numerals are given to the same or equivalent parts as the above-described configuration, and a detailed description thereof will be omitted.

16 to 20, according to another embodiment of the present invention, a plurality of independently divided pressure chambers (C1-1, C1-2, C2-1, C2-2, C2-3) is formed, and the first pressure applied to the substrate W at the center of the polishing pad 1220 is greater than the second pressure applied to the substrate W at the edge of the polishing pad 1220. .

This is to adjust the amount of polishing for each area of the polishing pad 1220 and to increase the uniformity of polishing the substrate W.

That is, in a method in which polishing is performed while the polishing pad rotates with respect to a fixed substrate, the amount of polishing may be non-uniform due to a difference in linear velocity (v = rw) between the central portion of the polishing pad and the edge portion of the polishing pad.

In particular, since the linear velocity at the edge of the polishing pad is greater than the linear velocity at the center of the polishing pad, the amount of polishing by the edge of the polishing pad may be greater than the amount of polishing by the central portion of the polishing pad. Accordingly, the substrate A deviation in polishing uniformity may occur.

However, according to the present invention, the first pressing force applied to the substrate W at the center of the polishing pad 1220 is greater than the second pressing force applied to the substrate W at the edge of the polishing pad 1220. , Since the amount of polishing can be adjusted differently for each central portion and edge portion of the polishing pad 1220, it is possible to uniformly adjust the thickness profile of the substrate W as a whole by eliminating the thickness variation of the substrate W. An advantageous effect of improving the polishing quality of the can be obtained.

More specifically, the lower surface (bottom plate) of the membrane 1214 that presses the polishing pad 1220 includes a plurality of pressing areas Z1 and Z2, and the plurality of pressing areas Z1 and Z2 have different pressing forces. The polishing pad 1220 is pressed.

Preferably, the pressurized regions Z1 and Z2 of the membrane 1214 are divided (eg, divided in a ring shape) along the radial direction of the membrane 1214 . For example, the membrane 1214 is formed to surround the first pressing region Z2 disposed in the central region of the polishing pad 1220 and the circumference of the first pressing region Z2, and is formed at the edge of the polishing pad 1220. and a second pressing area Z1 disposed in the area.

Here, the first pressing region Z2 of the membrane 1214 refers to a high first pressing force P2", P2', P for pressing the central portion of the polishing pad 1220 to the substrate. In addition, the second pressing area Z1 of the membrane 1214 refers to a low second pressing force (P1', P1) for pressing the edge of the polishing pad 1220 to the substrate. ) is applied to the edge of the polishing pad 1220.

Preferably, the first pressing area Z2 and the second pressing area Z1 are disposed concentrically with each other.

In addition, the first pressurized region Z2 may be further subdivided into a plurality of first divided zones Z2-1, Z2-2, and Z2-3. Here, the first divided zones Z2-1, Z2-2, and Z2-3 are defined as dividing the first pressurized region Z2 into a plurality of individually controllable zones.

More specifically, the first pressurized region Z2 may include a plurality of first divided zones Z2-1, Z2-2, and Z2-3 divided along the radial direction of the membrane 1214, and each Pressing forces of the first divided zones Z2-1, Z2-2, and Z2-3 are individually controlled. For example, the first pressurized region Z2 may include three first divided zones Z2-1, Z2-2, and Z2-3. In some cases, it is also possible that the first pressurized area includes four or more or two or less first divided zones, and the present invention is limited by the number and spacing (width along the radial direction) of the first divided zones. It is not limited.

Similarly, the second pressing area Z1 may be further subdivided into a plurality of second divided zones Z1-1 and Z1-2. Here, the second divided zones Z1-1 and Z1-2 are defined as dividing the second pressurized region Z1 into a plurality of individually controllable zones.

More specifically, the second pressurized region Z1 may include a plurality of second divided zones Z1-1 and Z1-2 divided along the radial direction of the membrane 1214, each of the second divided zones. The pressing forces of (Z1-1, Z1-2) are individually controlled. For example, the second pressing area Z1 may include two second divided zones Z1-1 and Z1-2. In some cases, the second pressurized area may include three or more second divided zones, and the present invention is not limited or limited by the number and spacing (width along the radial direction) of the second divided zones.

In this way, the first pressurized region Z2 is subdivided into a plurality of first divided zones Z2-1, Z2-2, and Z2-3, and the second pressurized region Z1 is divided into a plurality of second divided zones Z1. -1, Z1-2), it is possible to obtain an advantageous effect of more subdividing and precisely adjusting the pressure distribution in the first pressurized region Z2 and the pressure distribution in the second pressurized region Z1. .

In the second pressing region Z1, a smaller pressing force than that in the first pressing region Z2 is applied to the polishing pad 1220. This is to minimize the variation in polishing amount due to the linear speed at the edge of the polishing pad 1220 being relatively higher than the linear speed at the center of the polishing pad 1220 .

16 and 17, a second pressure chamber C1 for applying a second pressure to the second pressure area Z1 is formed above the second pressure area Z1, and the first pressure area Z2 A first pressure chamber C2 for applying a first pressure P2″, P2′, P greater than the second pressure pressure P1′, P1 to the first pressure area Z2 is formed on the upper part of the ).

More specifically, the second pressure chamber (C1) is a plurality of second divided pressure chambers (C1-) independently applying pressing forces (P1', P1) to the plurality of second divided zones (Z1-1, Z1-2). 1, C1-2), and the first pressure chamber (C2) has pressing forces (P2", P2', P) independently of the plurality of first divided zones (Z2-1, Z2-2, Z2-3). It includes a plurality of first divided pressure chambers (C2-1, C2-2, C2-3) for applying the.

A pressure profile applied to the polishing pad by the membrane 1214 may be variously changed according to required conditions and design specifications.

Preferably, referring to FIG. 18, in the plurality of first divided zones Z2-1, Z2-2, and Z2-3 along the radial direction of the membrane 1214, gradually decreasing pressing force P2 " >P2'>P) is applied, and a gradually smaller pressing force (P1'>P1) is applied to the plurality of second divided zones (Z1-1, Z1-2) from the inside to the outside along the radial direction of the membrane 1214. this is authorized

More preferably, the pressure profile applied to the polishing pad 1220 by the membrane 1214 is formed in an arc shape (hemispheric shape) with an inflection point located at the center of the polishing pad 1220 . In other words, the pressure profile applied to the polishing pad 1220 by the membrane 1214 has an arc shape with a high center (P2", P2', P2) and a low edge (P1', P1). is formed with

For reference, the pressure profile applied to the polishing pad 1220 by the membrane 1214 has a stepped shape step by step for each divided zone (Z2-1, Z2-2, Z2-3, Z1-1, Z1-2). However, it is possible to implement an arc-shaped pressure profile by averaging or subdividing the pressing force in each divided zone (Z2-1, Z2-2, Z2-3, Z1-1, Z1-2).

In this way, by making the pressing force applied to the polishing pad 1220 high at the center of the polishing pad and gradually decreasing towards the edge, the polishing amount variation due to the linear velocity variation along the radial direction of the polishing pad 1220 is more The beneficial effect of minimizing

In some cases, as shown in FIG. 19 , the pressure profile applied to the polishing pad 1220 by the membrane 1214 is in the form of a triangle (eg, isosceles triangle) with an inflection point located at the center of the polishing pad 1220. It is also possible to linearly decrease the pressing force applied to the polishing pad 1220 from the center to the edge of the polishing pad 1220.

Similarly, the pressure profile applied to the polishing pad 1220 by the membrane 1214 forms a stair step by step for each divided zone (Z2-1, Z2-2, Z2-3, Z1-1, Z1-2). However, it is possible to implement a linear triangular pressure profile by averaging or subdividing the pressing forces in each divided zone (Z2-1, Z2-2, Z2-3, Z1-1, Z1-2).

Alternatively, as shown in FIG. 20 , the pressure profile applied to the polishing pad 1220 by the membrane 1214 is uniform (P2) at the center and the radius of the membrane 1214 at the edge. It is also possible to be formed in the form of gradually decreasing (P1', P1) from the inside to the outside along the direction.

Here, the fact that the pressure profile applied to the polishing pad 1220 is uniform in the center means that the plurality of first divided zones Z2-1, Z2-2, Z2- 3) is defined as applying a uniform range of pressing force. Alternatively, it is also possible to apply the pressing force in a uniform range to the second divided zones Z1-1 and Z1-2, or to apply the pressing force in a stepwise fashion.

Meanwhile, FIGS. 21 and 22 are diagrams for explaining another embodiment of a membrane as a substrate processing apparatus according to the present invention. In addition, the same or equivalent reference numerals are given to the same or equivalent parts as the above-described configuration, and a detailed description thereof will be omitted.

Referring to FIGS. 21 and 22 , according to another embodiment of the present invention, it is also possible to form the membrane 1214 in a double structure.

More specifically, the membrane 1214 includes a first membrane 1214a contacting the polishing pad 1220 and a second membrane 1214b positioned above the first membrane 1214a.

For example, referring to FIG. 21 , the first membrane 1214a extends upward around the first bottom plate 1214a' contacting the polishing pad 1220 and the edge of the first bottom plate 1214a'. In addition, the second membrane 1214b includes a second bottom plate 1214b' positioned above the first bottom plate 1214a', and a second bottom plate ( 1214b') and includes partition walls 1214b" extending from the upper surface and forming a plurality of pressure chambers.

In addition, a restraining protrusion 1214c protrudes from the upper surface of the first membrane 1214a to position the second membrane 1214b with respect to the first membrane 1214a and restrain it to be fixed in position. For example, the restraining protrusion 1214c may be formed in a ring shape, and the second bottom plate 1214b' may be restrained in such a way that it is inserted into the inner circumferential surface of the restraining protrusion 1214c. In this way, the restraining protrusion 1214c is formed on the upper surface of the first membrane 1214a and the second membrane 1214b is restrained, thereby disposing the second membrane 1214b relative to the first membrane 1214a. can be stably maintained, and an advantageous effect of stably transmitting the pressing force to the polishing pad 1220 can be obtained. Alternatively, it is also possible to bond the second membrane to the upper surface of the first membrane or integrally manufacture the first membrane and the second membrane by double injection molding.

In this case, the first membrane 1214a and the second membrane 1214b may be formed of the same or similar material, and the present invention is limited or limited by the material of the first membrane 1214a and the second membrane 1214b. It is not.

Alternatively, the first membrane 1214a and the second membrane 1214b may be formed of different materials. For example, the first membrane 1214a and the second membrane 1214b are formed of materials having different stiffnesses. Here, the stiffness is defined to include any one or more of stiffness in a tensile direction, a bending direction, and a compression direction. Preferably, the second membrane 1214b is formed of a material having relatively lower rigidity than the first membrane 1214a.

For example, at least one of the first membrane 1214a and the second membrane 1214b is at least one of a textile material, a metallic textile, rubber, silicone, and polyurethane. can be formed using In some cases, it is also possible to form the second membrane with an inflexible material.

As another example, referring to FIG. 22 , a first bottom plate 1214a' contacting the polishing pad 1220 and a first side plate 1214a extending upward around the edge of the first bottom plate 1214a' "), but the second membrane 1214b extends from the second bottom plate 1214b' positioned above the first bottom plate 1214a' and the upper surface of the second bottom plate 1214b'. and a partition wall 1214b" forming a plurality of pressure chambers, and a second side plate 1214b" extending upward around the edge of the second bottom plate 1214b' and positioned on the inner surface of the first side plate 1214a". ').

As the second side plate 1214b"' is positioned in close contact with the inner surface of the first side plate 1214a", the arrangement state of the second membrane 1214b relative to the first membrane 1214a can be stably maintained.

As described above, the present invention is applied to the central portion of the membrane 1214 so that a pressing force (first pressing force) greater than the pressing force (second pressing force) applied to the edge portion of the membrane 1214 is applied to the polishing pad 1220. Since the polishing amount can be adjusted differently for each region (edge portion vs. the center portion), an advantageous effect of minimizing the polishing amount variation according to the difference in linear speed for each region of the polishing pad 1220 and increasing the polishing uniformity of the substrate W can be obtained. can

In addition, in the method in which a uniform pressing force is applied to the membrane as a whole, the polishing pad wears unevenly in each area, so the replacement cycle (for example, 4 polishing pads are used to polish the substrate) is short, and the polishing pad 1220 ), there is a problem in that it is difficult to increase the uniform polishing section (region that can be uniformly polished with one polishing pad). However, the present invention minimizes the non-uniform wear of the polishing pad 1220 by applying different pressing forces to each area of the membrane 1214, thereby minimizing the replacement cycle (for example, three polishing pads are used to polish a substrate). ) can be extended, and an advantageous effect of increasing the processing efficiency of the substrate W can be obtained by increasing the uniform polishing section by the polishing pad 1220 .

As described above, although it has been described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify and modify the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. You will understand that it can be changed.

1010: substrate processing device 1020: gantry unit
1022: X-axis gantry 1024: Y-axis gantry
1100: substrate holding unit 1110: substrate support unit
1120: surface pad 1120': transfer belt
1130: retainer 1130a: substrate receiving unit
1200: polishing unit 1210: polishing head
1212: body part 1214: membrane
1216: abrasive pad retainer 1216a: retainer extension
1217: fixing groove 1219: ring-shaped intermediate member
1220: polishing pad 1222: polishing plate part
1224: edge coupling plate 1226: fixing protrusion
1228: guide protrusion 1228a: tapered portion
1229: friction pad 1230, 1230': abrasive pad restraint
1231: restraining member 1232: first magnetic body
1234: second magnetic body 1300: preparation stage

Claims (49)

A substrate processing apparatus in which a polishing process of a substrate is performed,
a polishing pad for polishing the upper surface of the substrate;
A first membrane having a first bottom plate contacting the upper surface of the polishing pad, a second bottom plate stacked on the upper side of the first bottom plate, and a plurality of pressure chambers extending from the second bottom plate a polishing head having a membrane including a second membrane having a barrier rib to be formed, and rotating and moving with respect to the substrate;
and a restraining protrusion protruding from an upper surface of the first bottom plate and determining a disposition position of the second membrane with respect to the first membrane.
A substrate processing apparatus in which a polishing process of a substrate is performed,
a polishing pad for polishing the upper surface of the substrate;
A first membrane having a first bottom plate contacting the upper surface of the polishing pad, a second bottom plate stacked on the upper side of the first bottom plate, and a plurality of pressure chambers extending from the second bottom plate a polishing head having a membrane including a second membrane having a barrier rib to be formed, and rotating and moving with respect to the substrate;
The substrate processing apparatus of claim 1 , wherein the first membrane and the second membrane have different stiffnesses.
According to claim 2,
At least one of the first membrane and the second membrane is a substrate processing apparatus, characterized in that formed of any one of a textile material (fabric textile), a metallic textile (metallic textile), rubber, silicone, polyurethane.
A substrate processing apparatus in which a polishing process of a substrate is performed,
a polishing pad for polishing the upper surface of the substrate;
A first membrane having a first bottom plate contacting the upper surface of the polishing pad and a first side plate extending upward around an edge of the first bottom plate, and disposed to be stacked on the upper side of the first bottom plate a polishing head having a membrane including a second bottom plate and a second membrane having partition walls extending from the second bottom plate to form a plurality of pressure chambers, the polishing head rotating and moving with respect to the substrate;
and wherein the second membrane further comprises a second side plate extending upward around an edge of the second bottom plate and positioned on an inner surface of the first side plate.
delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete According to any one of claims 1 to 4,
The substrate processing apparatus according to claim 1 , wherein a first pressing force applied from the membrane to the substrate at a central portion of the polishing pad is greater than a second pressing force applied to the substrate at an edge portion of the polishing pad.
delete delete delete According to any one of claims 1 to 4,
and a restraining member limiting horizontal movement of the polishing pad relative to the polishing head.
delete The method of claim 26,
The polishing head,
a main body having the membrane on a lower surface;
a polishing pad retainer connected to the main body and to which the polishing pad is mounted; include,
The substrate processing apparatus according to claim 1 , wherein the restraining member restrains a side surface of the polishing pad and a side surface of the polishing pad retainer.
delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete

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