KR20190102945A - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus. The substrate processing apparatus, in which a polishing process of a substrate is performed, includes: a polishing pad polishing an upper surface of the substrate; and a polishing head having a membrane in contact with the upper surface of the polishing pad and moving with respect to the substrate, thereby increasing polishing stability and polishing accuracy.

Description

Substrate Processing Unit {SUBSTRATE PROCESSING APPARATUS}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving the polishing stability and polishing uniformity of a substrate.

Recently, with increasing interest in information display and increasing demand for the use of portable information media, flat panel displays (FPDs), which replace the existing display device, the Cathode Ray Tube (CRT) The research and commercialization of Korea is focused on.

In the field of flat panel display devices, the light and low power consumption of the liquid crystal display device (LCD) has been the most noticeable display device, but the liquid crystal display device is not a light emitting device but a light receiving device, and the brightness and contrast ratio (contrast) Due to disadvantages such as ratio, viewing angle, and the like, development of a new display device capable of overcoming these disadvantages is being actively developed. Among these, one of the next-generation displays that are in the spotlight recently is an organic light emitting display (OLED).

In general, a glass substrate having excellent strength and transmittance is used in a display apparatus. In recent years, since a display apparatus is aimed at slimming and high-pixel, a corresponding glass substrate should be prepared.

For example, as one of the OLED processes, in the laser laser annealing (ELA) process in which a laser is injected to amorphous silicon (a-Si) and crystallized into polysilicon (poly-Si), polysilicon crystallizes and projections may occur on the surface. And such protrusions may generate mura-effects, so the glass substrate must be able to be polished to remove the protrusions.

To this end, in recent years, various studies have been made to efficiently polish the surface of a substrate, but there is still a need for development thereof.

An object of this invention is to provide the substrate processing apparatus which can raise the processing efficiency of a board | substrate, and can improve polishing stability and polishing uniformity.

In particular, an object of the present invention is to enable a substrate to be uniformly polished according to the surface curvature of the substrate.

In addition, an object of the present invention is to be able to stably maintain the arrangement of the polishing pad during the polishing process.

In addition, it is an object of the present invention to easily replace the polishing pad, and to simplify the replacement process of the polishing pad.

Moreover, an object of this invention is to be able to improve productivity and a yield.

The present invention for achieving the above object of the present invention, there is provided a substrate processing apparatus comprising a polishing pad for polishing the upper surface of the substrate, and a polishing head having a membrane in contact with the upper surface of the polishing pad and moving relative to the substrate. do.

As described above, according to the present invention, it is possible to obtain an advantageous effect of increasing the processing efficiency of the substrate and improving polishing stability and polishing uniformity.

In particular, according to the present invention, an advantageous effect of uniformly polishing the substrate may be obtained by bringing the polishing pad into close contact with the substrate according to the surface curvature of the substrate.

In addition, according to the present invention, it is possible to obtain an advantageous effect of stably maintaining the arrangement state of the polishing pad during the polishing process and minimizing the sliding and detachment of the polishing pad.

In addition, according to the present invention, it is possible to easily replace the polishing pad, it is possible to obtain an advantageous effect of simplifying the replacement process of the polishing pad and shortening the time required for replacement.

In addition, according to the present invention, an advantageous effect of improving productivity and yield can be obtained.

1 is a perspective view for explaining a substrate processing apparatus according to the present invention;
2 is a side view for explaining a substrate processing apparatus according to the present invention;
3 is an enlarged view of a portion 'A' of FIG. 1,
4 is a cross-sectional view for explaining a polishing unit as a substrate processing apparatus according to the present invention;
5 is a substrate processing apparatus according to the present invention, which illustrates a deformation state of a membrane according to surface curvature of a substrate;
Figure 6 is a substrate processing apparatus according to the present invention, a view for explaining another embodiment of the polishing pad restraint,
7 is an enlarged view of a portion 'B' of FIG. 6,
8 is a substrate processing apparatus according to the present invention, which illustrates a polishing pad;
9 is a substrate processing apparatus according to the present invention, for explaining another embodiment of the polishing pad restraint unit;
10 is an enlarged view of a portion 'C' of FIG. 9,
11 is a substrate processing apparatus according to the present invention, which illustrates a retainer;
12 is a substrate processing apparatus according to the present invention, which is a plan view for explaining a polishing path of a polishing unit;
13 is a view for explaining a substrate processing apparatus according to another embodiment of the present invention;
14 is a substrate processing apparatus according to the present invention, which illustrates a preparation stage;
15 is a substrate processing apparatus according to the present invention, for explaining another embodiment of the polishing pad;
16 and 17 are substrate processing apparatuses according to the present invention for explaining the membrane,
18 is a substrate processing apparatus according to the present invention, which illustrates a pressing force applied to a polishing pad by a membrane;
19 is a substrate processing apparatus according to the present invention, for explaining another example of the pressing force applied to the polishing pad by the membrane,
20 is a substrate processing apparatus according to the present invention, and for explaining another example of the pressing force applied to the polishing pad by the membrane,
21 and 22 are views illustrating another embodiment of the membrane as a substrate processing apparatus according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, in the present description, the same numbers refer to substantially the same elements, and may be described by referring to the contents described in the other drawings under these rules, and the contents determined to be obvious to those skilled in the art or repeated may be omitted.

1 is a perspective view illustrating a substrate processing apparatus according to the present invention, FIG. 2 is a side view illustrating the substrate processing apparatus according to the present invention, and FIG. 3 is an enlarged view of portion 'A' of FIG. 1. 4 is a cross-sectional view illustrating a polishing unit as a substrate processing apparatus according to the present invention, and FIG. 5 is a diagram illustrating a deformation state of a membrane due to surface curvature of a substrate as a substrate processing apparatus according to the present invention. to be. 6 is a view for explaining another embodiment of the polishing pad restraint unit as the substrate processing apparatus according to the present invention, and FIG. 7 is an enlarged view of a portion 'B' of FIG. 6. 8 is a view for explaining a polishing pad as a substrate processing apparatus according to the present invention, and FIG. 9 is a view for explaining another embodiment of a polishing pad restraint portion as the substrate processing apparatus according to the present invention. FIG. 10 is an enlarged view of a portion 'C' of FIG. 9. 11 is a view for explaining a retainer as a substrate processing apparatus according to the present invention, and FIG. 12 is a plan view for explaining a polishing path of a polishing unit as the substrate processing apparatus according to the present invention.

1 to 12, the substrate processing apparatus 1010 according to the present invention includes a polishing pad 1220 in contact with an upper surface of the substrate W and a membrane 1214 in contact with an upper surface of the polishing pad 1220. And a polishing head 1210 moving relative to the substrate (W).

This is to uniformly polish the surface of the substrate even if bending occurs on the surface of the substrate.

That is, when deformation such as bending occurs in the substrate, the polishing pad is difficult to be in close contact with the surface of the substrate, thereby lowering the polishing uniformity of the substrate. In particular, when a curved shape of a smile shape (a form in which both side edge portions of the substrate are raised above the center portion of the substrate) is generated on the substrate, the polishing pad is difficult to adhere to the surface of the substrate, thereby lowering the polishing uniformity of the substrate. There is this.

However, according to the present invention, the bottom pad 1214a of the membrane 1214 and the polishing pad 1220 are deformed (bent) together to correspond to the surface curvature of the substrate W. By making it adhere to the surface as a whole, the advantageous effect of improving the polishing stability and polishing uniformity of the substrate W can be obtained.

In addition, if the arrangement state of the polishing pad for polishing the substrate is not kept constant while the polishing process is performed on the substrate, there is a problem that the polishing uniformity and polishing stability of the substrate are lowered. In particular, in a method in which a polishing pad having a size smaller than the substrate is pressed against the substrate to move the polishing pad to polish the substrate, as the pressing force for pressing the polishing pad against the substrate increases, the sliding phenomenon of the polishing pad against the polishing head is increased. There is a problem that greatly occurs, and if the sliding (deviation) of the polishing pad with respect to the polishing head is larger than a certain amount, there is a problem that the substrate is damaged or broken as the polishing head is in direct contact with the substrate.

However, according to the present invention, the polishing pad 1220 is constrained to the polishing head 1210 by the polishing pad restraining portion 1230, thereby stably positioning the polishing pad 1220 with respect to the polishing head 1210. Since it can hold | maintain, the advantageous effect which prevents the fall of polishing stability and polishing uniformity by the slide of a polishing pad, and damages a board | substrate can be acquired.

Above all, the present invention can obtain an advantageous effect of effectively limiting the horizontal movement of the polishing pad 1220 with respect to the polishing head 1210 by restraining the side of the polishing pad 1220 and the polishing head 1210. .

Furthermore, the present invention simplifies the replacement process of the polishing pad 1220 by selectively maintaining or releasing the bonding state between the polishing head 1210 and the polishing pad 1220, and thus, the replacement of the polishing pad 1220. An advantageous effect of shortening the time required can be obtained.

That is, the polishing pad 1220 for polishing the substrate should be replaceable periodically according to a predetermined use time. However, since the processing efficiency and productivity of the substrate decreases as the time required for replacing the polishing pad 1220 increases, the time required for replacing the polishing pad 1220 should be shortened. However, conventionally, since the polishing pad is configured to be fixed to the polishing head by an adhesive, the time required to separate the polishing pad from the polishing head and mount the subsequent polishing pad on the polishing head again increases processing efficiency and productivity. There is a problem.

In particular, as the polishing pad is conventionally attached to the polishing head by an adhesive, in order to replace the polishing pad, the polishing pad is forcibly detached from the polishing head and the subsequent polishing pad is then attached to the polishing head with adhesive. There is a problem that has to go through a cumbersome process to be made, there is a problem that takes a long time to replace the polishing pad is lowered the processing efficiency of the substrate. Furthermore, in order to separate the adhesive pad attached to the adhesive from the polishing head, it is necessary to force the polishing pad to remove the polishing pad from the polishing head by applying an external force. This process is very troublesome and takes a lot of time.

In addition, when foreign matter such as adhesive remains on the attachment surface to which the polishing pad is attached in the polishing head, subsequent polishing pads are difficult to attach in a state parallel to the attachment surface of the polishing head, and the polishing pad is attached incorrectly. When the polishing is performed on the substrate in the state that the polishing pad is attached to cover the polishing pad, the polishing uniformity and polishing stability of the substrate may be deteriorated.

However, the present invention allows the polishing pad 1220 to be bonded to the polishing unit 1200 in a non-adhesive manner without using an adhesive, thereby adhering the adhesive to the attachment surface to which the polishing pad 1220 is attached in the polishing unit 1200. Since foreign matters such as back can be minimized and subsequent polishing pads 1220 '(replacement polishing pads) can always be attached to the polishing unit 1200 in a predetermined posture (parallel to the polishing unit), polishing Advantageous effects of improving uniformity and polishing stability can be obtained.

The polishing head 1210 and the polishing pad 1220 are provided to constitute the polishing unit 1200, and polish the substrate W mounted on the substrate mounting unit 1100.

The substrate mounting unit 1100 is disposed between the loading part (not shown) and the unloading part (not shown), and the substrate W supplied to the loading part is transferred to the substrate mounting unit 1100 so that the substrate mounting unit ( After being ground in the seated state 1100, it is unloaded through the unloading part.

More specifically, the loading part is provided for loading the substrate W to be polished into the polishing part.

The loading part may be formed in various structures capable of loading the substrate W on the polishing part, and the present invention is not limited or limited by the structure of the loading part.

For example, the loading part may include a plurality of loading feed rollers (not shown) spaced apart from each other at predetermined intervals, and the substrate W supplied on top of the plurality of loading feed rollers may have a plurality as the loading feed roller rotates. Are mutually cooperated by two loading feed rollers. In some cases, the loading part may be configured to include a circulation belt which is circulated by the loading conveying roller.

In addition, the substrate W supplied to the loading part may be aligned in a posture and a position in which postures and positions are determined by an alignment unit (not shown) before being supplied to the loading part.

For reference, as the substrate W used in the present invention, a rectangular substrate having one side length larger than 1 m may be used. For example, as a substrate to be subjected to a chemical mechanical polishing process, a sixth generation glass substrate having a size of 1500 mm * 1850 mm may be used. In some cases, it is also possible to use 7th and 8th generation glass substrates as the substrate to be processed. Alternatively, it is also possible to use a substrate (eg, a second generation glass substrate) whose length is smaller than 1 m.

The substrate mounting portion 1100 and the polishing unit 1200 are provided to form a polishing part between a loading part (not shown) and an unloading part (not shown).

The substrate mounting unit 1100 may be provided in various structures capable of mounting the substrate W, and the structure and shape of the substrate mounting unit 1100 may be variously changed according to required conditions and design specifications.

For example, referring to FIGS. 1 to 13, the substrate mounting unit 1100 is provided on the substrate support 1110 and the upper surface of the substrate support 1110 and suppresses slip by increasing a coefficient of friction for the substrate W. As shown in FIG. And a surface pad 1120, and the substrate W is seated on an upper surface of the pad.

For reference, in the present invention, polishing the substrate W is defined as polishing the substrate W by a mechanical polishing process or a chemical mechanical polishing (CMP) process on the substrate W. For example, in the polishing part, a slurry for chemical polishing is supplied together while a mechanical polishing on the substrate W is performed, and a chemical mechanical polishing (CMP) process is performed. In this case, the slurry may be supplied from an inner region of the polishing pad 1220 (eg, a center portion of the polishing pad) or from an outer region of the polishing pad 1220.

The substrate support part 1110 is provided to support the bottom surface of the substrate (W).

The substrate support 1110 may be configured to support the substrate W in various ways depending on the required conditions and design specifications.

Hereinafter, an example in which the substrate support 1110 is formed in a substantially rectangular plate shape will be described. In some cases, the substrate support may be formed in other shapes and structures, and it is also possible to support the bottom of the substrate by using two or more substrate supports.

In addition, a stone plate may be used as the substrate support 1110. In some cases, the substrate support part may be formed of a metal material or a porous material, and the present invention is not limited or limited by the material of the substrate support part.

The upper surface of the substrate support 1110 is provided with a surface pad 1120 to suppress the slip by increasing the coefficient of friction for the substrate (W).

In this way, the surface pad 1120 is provided on the upper surface of the substrate support 1110, and the substrate W is seated on the outer surface of the surface pad 1120, so that the substrate W is supported by the substrate support 1110. In the mounted state, the movement of the substrate W relative to the substrate support 1110 may be restrained (slip restrained), and an advantageous effect of stably maintaining the placement position of the substrate W may be obtained.

The surface pad 1120 may be formed of various materials having adhesion to the substrate W, and the present invention is not limited or limited by the material of the surface pad 1120. For example, the surface pad 1120 may be formed using any one or more of polyurethane, engineering plastic, and silicone having excellent stretch and adhesion (friction). In some cases, the surface pad may be formed of another material having a non-slip function.

In addition, the surface pad 1120 is formed to have a relatively high compression ratio. Here, the surface pad 1120 is formed to have a relatively high compressibility, it can be expressed that the surface pad 1120 has a relatively high elongation, the soft material that the surface pad 1120 can be easily compressed Is defined as formed.

Preferably, the surface pad 1120 is formed to have a compression ratio of 20 to 50%. As such, the surface pad 1120 is formed to have a compression ratio of 20 to 50%, so that even if foreign matter flows in between the substrate W and the surface pad 1120, the surface pad 1120 is easily as thick as the foreign matter. Since it can be compressed, it is possible to minimize the height deviation (specific portions of the substrate W locally protruded by foreign matter) due to the foreign matter, and as a specific portion of the substrate W locally protrudes An advantageous effect of minimizing the reduction of polishing uniformity can be obtained.

On the other hand, in the above-described and illustrated embodiments of the present invention have been described by way of example in which the substrate support portion is configured to support the substrate in a contact manner, in some cases it is also possible to configure the substrate support portion to support the bottom surface of the substrate in a non-contact manner Do.

For example, the substrate support unit may be configured to inject a fluid to the bottom of the substrate, and to support the bottom (or bottom of the surface pad) of the substrate by the injection force by the fluid. In this case, the substrate support unit may spray at least one of a gas (for example, air) and a liquid (for example, pure water) to the bottom surface of the substrate, and the type of fluid may vary depending on the required conditions and design specifications. can be changed.

In some cases, the substrate support may be configured to support the inner surface of the substrate in a non-contact manner by using magnetic force (for example, repulsive force) or floating force by ultrasonic vibration.

The polishing unit 1200 is provided to polish the surface of the substrate W while being in contact with the surface of the substrate W.

More specifically, the polishing unit 1200 may include a polishing head 1210 moving relative to the substrate, a polishing pad 1220 disposed below the polishing head 1210 and polishing the upper surface of the substrate, and the polishing head 1210. And a polishing pad restraint 1230 that restrains the polishing pad 1220.

The polishing head 1210 may be formed in various structures capable of pressing the polishing pad 1220 while rotating, and the present invention is not limited or limited by the structure of the polishing head 1210.

For example, the polishing head 1210 may be connected to the main body portion 1212, a membrane 1214 provided on the bottom of the main body portion 1212, and pressing the polishing pad 1220 to the substrate, and the main body portion 1212. And a polishing pad retainer 1216 on which the polishing pad 1220 is mounted.

The main body 1212 may be configured as a single body, or a plurality of bodies may be combined and configured to rotate in connection with a drive shaft (not shown). In addition, the polishing head 1210 is provided with a pressing portion (for example, a pneumatic pressing portion for pressing the polishing pad by pneumatic pressure) for pressing the polishing pad 1220 to the surface of the substrate (W).

The membrane 1214 is mounted on the bottom surface of the main body 1212 and is provided to transmit a pressing force for pressing the polishing pad 1220 to the substrate W.

Preferably, the membrane 1214 is formed of an elastically flexible material (eg, polyurethane) that is deformable in response to surface curvature of the substrate (W).

This is to increase the adhesion of the polishing pad 1220 to the substrate W and to improve the polishing uniformity of the substrate.

That is, when deformation such as bending occurs in the substrate, the polishing pad is difficult to be in close contact with the surface of the substrate, thereby lowering the polishing uniformity of the substrate. In particular, a smile-shaped warpage may occur in which both side edge portions of the substrate are raised above the central portion of the substrate. When the membrane is formed of a rigid rigid material, the surface contact with the bottom surface (bottom plate) of the membrane is performed. Since the bottom surface of the polishing pad is always in flat contact with the surface of the substrate, it is difficult to bring the polishing pad into close contact with the substrate due to the surface curvature of the curved substrate. There is a problem that occurs.

However, according to the present invention, by forming the membrane 1214 as a flexible material, the membrane 1214 is deformed (bent) in response to the bent state of the substrate W, and the polishing pad 1220 is attached to the substrate W. FIG. Since it can adhere to the surface, the advantageous effect of improving the polishing stability and polishing uniformity of the substrate can be obtained.

For example, referring to FIG. 5, when the upper surface is formed in a smile shape in which the central portion of the substrate W is convex downward compared to the edge, the membrane 1214 smiles in response to the surface curvature of the substrate W. FIG. The polishing pad 1220 pressurized by the membrane 1214 also polishes the substrate W while being deformed into a smile shape. In some cases, it is also possible to polish the membrane with the polishing pad deformed in the wave form along the surface curvature of the substrate deformed in the wave form.

Membrane 1214 can be configured to apply a pressing force to the polishing pad in a variety of ways depending on the desired conditions and design specifications. For example, a pressure chamber is formed on the membrane 1214, and by adjusting the pressure of the pressure chamber, the pressing force of the polishing pad pressing the substrate W may be adjusted. In some cases, it is possible to form a sealed air chamber on the upper part of the membrane and to adjust the pressing force for pressing the substrate by the polishing pad by the force of the pressing means pressing the air chamber.

More preferably, the membrane 1214 is formed on the bottom plate 1214a in contact with the polishing pad 1220 and the upper surface of the bottom plate 1214a to extend the plurality of pressure chambers C1-1, C1-2, and C2. Barrier ribs 1214b forming -1, C2-2, and C2-3 (see FIG. 16).

Each of the plurality of pressure chambers C1-1, C1-2, C2-1, C2-2, and C2-3 may be provided with a pressure sensor (not shown) for measuring pressure. The pressure in each of the pressure chambers C1-1, C1-2, C2-1, C2-2, and C2-3 can be individually adjusted by control by a pressure controller (not shown), and each pressure chamber C1 -1, C1-2, C2-1, C2-2, C2-3) by adjusting the pressure to press the substrate for each region of the polishing pad 1220 can be adjusted individually (for example, different) have.

More specifically, the bottom surface of the membrane 1214 for pressing the polishing pad 1220 is divided into a plurality of pressing regions Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3.

Here, the pressurization zones Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3 are divided by partition walls 1214b and bottom plates contacting the upper surface of the polishing pad 1220 ( 1214a), and different pressing pressures are individually applied to the pressing areas Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3.

The number and size of the pressing areas can be variously changed depending on the required conditions and design specifications. For example, the bottom plate 1214a forming the bottom surface of the membrane 1214 may include five pressing regions Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3. In some cases, the membrane may be configured to include four or less pressurized regions.

The partition 1214b may be configured to partition the pressing area in various forms according to required conditions and design specifications. Preferably, the partition wall 1214b is formed in a ring shape to partition the plurality of pressing areas Z1-1, Z1-2, Z2-1, Z2-2, and Z2-3 along the radial direction of the membrane 1214. The plurality of pressing regions are formed in a ring shape. In some cases, the plurality of pressing regions may be partitioned along the circumferential direction of the membrane, or may be configured to be partitioned in a lattice form or some other form.

Therefore, the radial direction of the membrane 1214 by the pneumatic pressure supplied from the pressure regulator (not shown) to the respective pressure chambers (C1-1, C1-2, C2-1, C2-2, C2-3) The pressing force may be applied to the polishing pad 1220 with a pressure deviation of. By applying different pressing forces to the polishing pad 1220 along the radial direction of the membrane 1214, the thickness variation in the radial direction of the substrate 1010 may be eliminated. For example, in a state where the thickness distribution of the entire plate surface of the substrate 1010 is obtained, the pressing force applied to the pressure chamber is applied to the region where the thickness of the substrate is measured, compared to the region where the thickness of the substrate is measured. With greater control, the substrate thickness can be precisely adjusted to the overall desired distribution shape.

The polishing pad retainer 1216 is connected to the body portion 1212 and is provided for mounting the polishing pad 1220.

The polishing pad retainer 1216 may be provided in various positions and shapes in which the polishing pad 1220 may be coupled according to required conditions and design specifications.

For example, the polishing pad retainer 1216 is formed in a ring shape on the outside of the membrane 1214 along the circumference of the membrane 1214 and is connected to the side of the body portion 1212. In some cases, the polishing pad retainer may be partially formed along the circumference of the membrane 1214 or may be configured to be connected to the upper surface of the main body 1212.

The polishing pad restraint 1230 is provided to restrain the polishing pad 1220 with respect to the polishing head 1210. More specifically, the polishing pad restraint 1230 is provided to limit the horizontal movement of the polishing pad relative to the polishing head.

This is to increase placement stability of the polishing pad 1220 and to increase polishing stability and polishing uniformity of the substrate W.

That is, if the arrangement state of the polishing pad for polishing the substrate is not kept constant while the polishing process is performed on the substrate, there is a problem that the polishing uniformity and polishing stability of the substrate are lowered. In particular, in a method in which a polishing pad having a size smaller than the substrate is pressed against the substrate to move the polishing pad to polish the substrate, as the pressing force for pressing the polishing pad against the substrate increases, the sliding phenomenon of the polishing pad against the polishing head is increased. There is a problem that greatly occurs, and if the sliding (deviation) of the polishing pad with respect to the polishing head is larger than a certain amount, there is a problem that the substrate is damaged or broken as the polishing head is in direct contact with the substrate.

However, according to the present invention, the polishing pad 1220 is constrained to the polishing head 1210 by the polishing pad restraining portion 1230, thereby stably positioning the polishing pad 1220 with respect to the polishing head 1210. Since it can hold | maintain, the advantageous effect which prevents the fall of polishing stability and polishing uniformity by the slide of a polishing pad, and damages a board | substrate can be acquired.

Above all, the present invention can obtain an advantageous effect of effectively limiting the horizontal movement of the polishing pad 1220 with respect to the polishing head 1210 by restraining the side of the polishing pad 1220 and the polishing head 1210. .

The polishing pad restraining part 1230 may be formed in various structures capable of restraining the polishing pad 1220 with respect to the polishing pad retainer 1216.

For example, referring to FIGS. 1 to 3, the polishing pad restraining unit 1230 may constrain the side surface of the polishing pad 1220 and the polishing head 1210, and the polishing pad 1220 with respect to the polishing head 1210. Constraining member 1231 to limit the horizontal movement of the.

More specifically, the restraining member 1231 is provided to restrain the side of the polishing pad 1220 and the side of the polishing pad retainer 1216.

In this case, the restraining member 1231 may be formed in various structures capable of restraining the side surface of the polishing pad 1220 and the side surface of the polishing pad retainer 1216. For example, the restraining member 1231 may be formed in a ring shape along the circumference of the polishing pad retainer 1216.

As described above, the restraining member 1231 is formed in a ring shape, and the restraining member 1231 is disposed so as to surround the entire circumference of the polishing pad 1220, thereby polishing the polishing pad 12 along the radial direction of the polishing pad 1220. Since all of the movement of the 1220 can be limited, an advantageous effect of more stably limiting the movement of the polishing pad 1220 relative to the polishing head 1210 can be obtained.

Further, the polishing pad retainer 1216 and the polishing pad 1220 are inserted into the restraining member 1231 formed in a ring shape, and the outer surface of the polishing pad 1220 and the polishing pad retainer are inserted into the inner surface of the restraining member 1231. The outer surface of the 1216 is brought into contact with each other and the polishing pad 1220 and the polishing pad retainer 1216 are restrained from each other, thereby restraining the restraining member 1231 to the side of the polishing pad 1220 or the polishing pad retainer 1216. The use of a separate fixing member for fixing to the side of the can be eliminated, it can be advantageous to simplify the mounting process of the restraining member 1231 and shorten the mounting time.

In some cases, a plurality of restraining members (for example, three restraining members disposed at 120 degree intervals) are provided to be spaced along the circumference of the polishing pad retainer, and the polishing pad is pushed against the polishing head by the plurality of restraining members. It is also possible to allow this to be restrained.

As another example, referring to FIGS. 6 to 7, the polishing pad restrainer 1230 forms an abrasive force (AF) between the polishing pad retainer 1216 and the polishing pad 1220 to form the polishing pad retainer 1216. ) And the polishing pad 1220 may be combined.

The polishing pad restraining portion 1230 may be formed in various structures capable of forming mutual attraction between the polishing pad retainer 1216 and the polishing pad 1220. More specifically, the polishing pad restraining portion 1230 is provided on the bottom surface of the polishing pad retainer 1216 so as to face the first magnetic body 1232 and the first magnetic body 1232 provided on the upper surface of the polishing pad 1220. And a second magnetic body 1234, and the polishing pad retainer 1216 and the polishing pad 1220 are coupled by mutual attraction AF (electromagnetic force) between the first magnetic body 1232 and the second magnetic body 1234. .

The mutual attraction AF between the first magnetic body 1232 and the second magnetic body 1234 may be formed in various ways. For example, any one or more of the first magnetic body 1232 and the second magnetic body 1234 may be formed of an electromagnet or a permanent magnet capable of forming mutual attraction (AF). In some cases, it is also possible to form an attractive force using a magnet and a metal.

Hereinafter, an example in which the second magnetic body 1234 is formed of an electromagnet and the second magnetic body 1234 is formed of a permanent magnet will be described. As such, when power is applied to the second magnetic body 1234 made of an electromagnet, the polishing pad 1220 is polished by the mutual attraction AF between the first magnetic body 1232 and the second magnetic body 1234. It is fixed to). On the other hand, when the power supply to the second magnetic material 1234 is stopped, mutual attraction between the first magnetic material 1232 and the second magnetic material 1234 is released.

Therefore, when the polishing pad 1220 is replaced, the power supply to the second magnetic material 1234 is stopped by a separate separation process for forcibly separating the polishing pad 1220 from the polishing pad retainer 1216. The polishing pad 1220 can be easily separated from the polishing pad retainer 1216.

Preferably, the first magnetic body 1232 and the second magnetic body 1234 are formed in a ring shape along the circumferential direction of the polishing pad retainer 1216. As such, the first magnetic body 1232 and the second magnetic body 1234 are each formed in a ring shape, and the polishing pad retainer 1216 and the polishing pad 1220 are continuously formed along the circumferential direction of the polishing pad retainer 1216. By being coupled, an advantageous effect of more stably maintaining the bonding state of the polishing pad retainer 1216 and the polishing pad 1220 can be obtained.

As another example, referring to FIGS. 9 and 10, the polishing pad restraining portion 1230 ′ applies suction pressure from the polishing pad retainer 1216 to the polishing pad 1220, thereby polishing the polishing pad retainer 1216 and the polishing pad. Join 1220.

More specifically, the polishing pad restraining portion 1230 ′ is formed on the bottom surface of the polishing pad retainer 1216 and includes a suction hole 1218 to which suction pressure (vacuum pressure) is applied.

In this case, a plurality of suction holes 1218 may be formed to be spaced apart along the circumferential direction of the polishing pad retainer 1216. In some cases, the suction hole 1218 may be formed in a continuous ring shape along the circumferential direction of the polishing pad retainer 1216.

As such, when a vacuum pressure is applied to the suction hole 1218, the polishing pad 1220 is suction-fixed to the polishing pad retainer 1216 by the suction force VF formed in the suction hole 1218. On the other hand, when the vacuum pressure supply to the suction hole 1218 is stopped, the polishing pad 1220 is separated from the polishing pad retainer 1216.

Therefore, when the polishing pad 1220 is replaced, the vacuum pressure supply to the suction hole 1218 is stopped by a separate separation process for forcibly separating the polishing pad 1220 from the polishing pad retainer 1216. The polishing pad 1220 can be easily separated from the polishing pad retainer 1216.

In addition, referring to FIG. 10, the guide pad 1228 accommodated in the suction hole 1218 may protrude from the polishing pad 1220.

In this case, a plurality of guide protrusions 1228 may be formed to correspond to the plurality of suction holes 1218, or may be configured to be accommodated only in a part of the plurality of suction holes. In some cases, the guide protrusion may be formed in a ring shape.

As such, the guide protrusion 1228 is formed on the top surface of the polishing pad 1220, and the guide protrusion 1228 is accommodated in the suction hole 1218, thereby polishing the pad against the polishing unit 1200 during the polishing process. An advantageous effect of constraining horizontal movement of 1220 can be obtained.

Preferably, the tapered portion 1228a is formed to be inclined at the upper end of the guide protrusion 1228, the polishing head 1210 moves along the tapered portion 1228a, and the guide protrusion 1228 and the suction hole 1218 are aligned. Let's do it.

Here, the taper portion 1228a aligns the guide protrusion 1228 and the suction hole 1218, when the guide protrusion 1228 enters the suction hole 1218, the guide protrusion 1228 and the suction hole ( It is defined as adjusting the horizontal position of the polishing unit 1200 relative to the polishing pad 1220 (or the horizontal position of the polishing pad relative to the polishing unit) such that 1218 moves to a position coaxially disposed.

As such, the tapered portion 1228a is formed at the upper end of the guide protrusion 1228, and the inlet end of the suction hole 1218 moves along the tapered portion 1228a, and the suction hole 1218 and the guide protrusion 1228 are By being arranged coaxially, it is possible to obtain an advantageous effect that the entry of the guide protrusion 1228 toward the inside of the suction hole 1218 more smoothly.

As described above, the polishing pad 1220 is mounted to the polishing pad retainer 1216 of the polishing head 1210 and linearly polishes the surface of the substrate W while rotating in contact with the surface of the substrate W. Planarization).

The polishing pad 1220 is formed of a material suitable for mechanical polishing of the substrate (W). For example, the polishing pad 1220 may be made of polyurethane, polyurea, polyester, polyether, epoxy, polyamide, polycarbonate, polyethylene, polypropylene, fluoropolymer, vinyl polymer, acrylic and methacrylic polymer, Silicone, latex, nitride rubber, isoprene rubber, butadiene rubber, and various copolymers of styrene, butadiene, and acrylonitrile may be formed, and the materials and properties of the polishing pad 1220 may be adjusted to the required conditions and design specifications. It can be changed in various ways.

Preferably, as the polishing pad 1220, a circular polishing pad 1220 having a size smaller than that of the substrate W is used. That is, it is also possible to polish the substrate using a polishing pad having a size larger than that of the substrate W. However, when a polishing pad having a size larger than the substrate is used, a very large rotating device and a space may be used to rotate the polishing pad. Since it is necessary, there is a problem that space efficiency and design freedom are lowered and stability is lowered. Therefore, it is preferable to use a polishing pad 1220 having a size smaller than that of the substrate (W). More preferably, the polishing pad 1220 may be formed to have a diameter corresponding to the width or length of the substrate W, or may be formed to have a diameter smaller than 1/2 of the width or length of the substrate W. Can be.

Substantially, rotating the polishing pad (for example, the polishing pad having a diameter larger than 1m) having a size larger than the substrate W, since the substrate W has at least one side length greater than 1 m. The problem itself is very difficult. In addition, when a non-circular polishing pad (for example, a square polishing pad) is used, the surface of the substrate W to be polished by the rotating polishing pad cannot be polished to a uniform thickness as a whole. However, the present invention, by rotating the circular polishing pad 1220 having a smaller size than the substrate (W) to polish the surface of the substrate (W), the polishing pad (without significantly lowering the space efficiency and design freedom) It is possible to rotate the 1220 to polish the substrate W, and to obtain an advantageous effect of keeping the amount of polishing by the polishing pad 1220 uniformly as a whole.

More specifically, referring to FIG. 8, the polishing pad 1220 has an abrasive plate portion 1222 in contact with the substrate, and an edge coupling plate portion 1224 formed at an edge of the abrasive plate portion 1222 and coupled to the polishing head 1210. ).

The abrasive plate portion 1222 is formed in a circular shape corresponding to the membrane 1214, and the edge coupling plate portion 1224 is formed in a ring shape corresponding to the abrasive pad retainer 1216.

For reference, the polishing plate portion 1222 is in close contact with the substrate during the polishing process, and the edge bonding plate portion 1224 does not contact the substrate. In some cases, the edge engaging plate portion 1224 may be in contact with the substrate without applying a pressing force to the substrate during the polishing process.

In this case, the polishing plate portion 1222 and the edge coupling plate portion 1224 of the polishing pad 1220 may be formed of the same material or may be formed of different materials.

Preferably, the abrasive plate portion 1222 and the edge coupling plate portion 1224 of the polishing pad 1220 are formed of different materials, and the edge coupling plate portion 1224 is formed of a material having a higher hardness than the abrasive plate portion 1222. .

This is to more stably maintain the bonding state of the polishing pad 1220 to the polishing unit 1200.

That is, it is also possible to form both the edge joining plate portion 1224 and the abrasive plate portion 1222 with a flexible material (for example, polyurethane). However, when the edge bonding plate portion 1224 is formed of a flexible material, and a rising or bending phenomenon occurs in the edge bonding plate portion 1224 during the polishing process, the edge bonding plate portion 1224 and the polishing pad retainer 1216 are formed. There is a problem that the bonding state is difficult to maintain stable.

Accordingly, according to the present invention, the edge bonding plate portion 1224 is formed of a hard material having a higher hardness than the abrasive plate portion 1222, thereby suppressing deformation of the edge bonding plate portion 1224, and engaging the edge coupling plate portion 1224. An advantageous effect of keeping the state stable can be obtained. In some cases, it is possible to attach a reinforcing member having a high hardness to the edge joining plate.

In addition, referring to FIG. 7, the fixing protrusions 1226 are formed to protrude from the upper surface of the edge coupling plate part 1224, and the fixing protrusions 1226 are accommodated on the bottom surface of the polishing pad retainer 1216 of the polishing unit 1200. The fixing groove 1217 may be formed.

As described above, the fixing protrusions 1226 are formed on the upper surface of the edge coupling plate part 1224, and the fixing protrusions 1226 are accommodated in the fixing grooves 1217 formed in the bottom surface of the polishing pad retainer 1216. An advantageous effect of more reliably restraining the horizontal movement of the polishing pad 1220 relative to the polishing unit 1200 during the process can be obtained.

In addition, a friction pad (not shown) may be provided on an upper surface of the polishing pad 1220 in contact with the polishing unit 1200 to suppress a slip by increasing a coefficient of friction for the polishing unit 1200.

In this way, the polishing pad 1220 is mounted to the polishing unit 1200 by providing a friction pad on the upper surface of the polishing pad 1220 and causing the membrane 1214 of the polishing unit 1200 to contact the friction pad. In this state, the movement of the polishing pad 1220 with respect to the membrane 1214 can be suppressed (constrained slippage), and an advantageous effect of stably maintaining the placement position of the polishing pad 1220 can be obtained.

The friction pad may be formed of various materials having adhesion to the membrane 1214 of the polishing unit 1200, and the present invention is not limited or limited by the material of the friction pad. For example, the friction pad may be formed using any one or more of polyurethane, engineering plastic, and silicone having excellent elasticity and adhesiveness (friction). In some cases, the friction pad may be formed of another material having a non-slip function.

The polishing unit 1200 is configured to move along the X-axis direction and the Y-axis direction by the gantry unit 1020.

More specifically, the gantry unit 1020 includes a X-axis gantry 1022 that moves linearly along the X-axis direction and a Y-axis direction that is mounted on the X-axis gantry 1022 and orthogonal to the X-axis direction. The Y-axis gantry 1024 is included, and the polishing unit 1200 is mounted on the Y-axis gantry 124 to polish the substrate W while moving along the X-axis direction and the Y-axis direction.

The X-axis gantry 1022 may be formed in a “U” shape and configured to move along the guide rail 1022a disposed along the X-axis direction. Permanent magnets of N pole and S pole are alternately arranged on the guide rail 1022a, and the X-axis gantry 1022 is a linear motor capable of precise position control by current control applied to the coil of the X-axis gantry 1022. Can be driven on principle.

At this time, the polishing path of the polishing unit 1200 may be variously changed according to the required conditions and design specifications.

For example, referring to FIG. 12, the polishing pad 1220 may have a first diagonal path L1 inclined with respect to one side of the substrate W and a second diagonal line inclined in a direction opposite to the first diagonal path L1. It is configured to polish the surface of the substrate W while repeatedly zigzag along the path L2.

Here, the first diagonal path L1 means a path that is inclined at a predetermined angle θ with respect to the bottom side of the substrate W, for example. In addition, the second diagonal path L2 means a path that is inclined at a predetermined angle toward the opposite direction of the first diagonal path L1 so as to intersect the first diagonal path L1.

In addition, in the present invention, the polishing pad 1220 repeatedly zigzags along the first diagonal path L1 and the second diagonal path L2, so that the polishing pad 1220 contacts the surface of the substrate W. The movement path of the polishing pad 1220 with respect to the substrate W is not interrupted during the movement to the substrate W, but is changed in the other direction (switching from the first diagonal path to the second diagonal path). In other words, the polishing pad 1220 continuously moves along the first diagonal path L1 and the second diagonal path L2 and forms a continuously moving wave-shaped moving trajectory.

More specifically, the first diagonal path L1 and the second diagonal path L2 are linearly symmetrical with respect to one side of the substrate W, and the polishing pad 1220 is the first diagonal path L1 and the second diagonal path. The surface of the substrate W is polished by zigzag movement repeatedly along L2. In this case, the first diagonal path L1 and the second diagonal path L2 are linearly symmetrical with respect to one side of the substrate W, and the first diagonal path L1 around the one side 111 of the substrate W is referred to. ) And when the second diagonal path L2 is symmetrical, it means that the first diagonal path L1 and the second diagonal path L2 completely overlap each other, and one side and the first diagonal path L1 of the substrate W are completely overlapped. The angle formed by) and the angle formed by one side of the substrate W and the second diagonal path L2 are defined to be equal to each other.

Preferably, the polishing pad 1220 is formed on the substrate W along the first diagonal path L1 and the second diagonal path L2 with a reciprocating pitch having a length smaller than or equal to the diameter of the polishing pad 1220. The reciprocating movement. In the following description, the polishing pad 1220 has a length corresponding to the diameter of the polishing pad 1220 as a reciprocating pitch P, with respect to the substrate W along the first diagonal path L1 and the second diagonal path L2. An example of regularly reciprocating movement will be described.

At this time, the polishing unit 1200 may be configured to linearly move by a structure (not shown) such as a gantry (Gantry), the present invention is limited by the type and structure of the structure to move the polishing unit 1200 It is not limited. For example, the gantry may be disposed on both sides of the substrate W with the substrate W therebetween, and may include a first support shaft and a second support shaft, and the first support shaft may be linearly moved along the transport direction of the substrate W. It may include a connecting shaft connecting the support shaft and the second support shaft, the polishing unit 1200 may be mounted on the connecting shaft.

As described above, the polishing pad 1220 polishes the surface of the substrate W while repeatedly zigzag moving along the first diagonal path L1 and the second diagonal path L2 with respect to the substrate W, The polishing pad 1220 in the entire surface region of the substrate W is formed by causing the length 1220 to move forward with respect to the substrate W at a length less than or equal to the diameter of the polishing pad 1220 as the reciprocating pitch P. The advantageous effect of regularly and uniformly polishing the entire surface of the substrate W can be obtained without a region in which polishing by) is omitted.

Herein, the polishing pad 1220 moves forward with respect to the substrate W. The polishing pad 1220 moves with respect to the substrate W along the first diagonal path L1 and the second diagonal path L2. While moving straight toward the front of the substrate W (eg, from the bottom side to the top side of the substrate with reference to FIG. 12). In other words, a right triangle formed of a base, hypotenuse, and feces, for example, the base of the right triangle is defined as the base of the substrate W, and the hypotenuse of the right triangle is the first diagonal path L1 or the second diagonal path ( L2), and the right side of the right triangle may be defined as a forward movement distance of the polishing pad 1220 with respect to the substrate (W).

In other words, the polishing pad 1220 repeatedly moves zigzag with respect to the substrate W using a length less than or equal to the diameter of the polishing pad 1220 as the reciprocating pitch (moving along the first diagonal path and the second diagonal path). By polishing the substrate W, it is possible to prevent the occurrence of a region in which polishing by the polishing pad 1220 is omitted in the entire surface region of the substrate W, so that the thickness variation of the substrate W is reduced. Can be controlled uniformly, and the thickness distribution of the substrate W can be uniformly adjusted with respect to the two-dimensional plate surface to obtain an advantageous effect of improving polishing quality.

As another example, the polishing pad 1220 is repeatedly zigzag along a first straight path (not shown) along one side direction of the substrate W and a second straight path (not shown) opposite to the first straight path. It is also possible to polish the surface of the substrate W while moving.

Here, the first straight path means, for example, a path along a direction from one end of the bottom side of the substrate W to the other end. In addition, the second straight path means a path that faces in the direction opposite to the first straight path.

For reference, in the above-described and illustrated embodiments of the present invention, the polishing part is described as an example in which only one polishing unit 1200 is included. However, in some cases, the polishing part may include two or more polishing units. Do. For example, the polishing part may comprise two or more polishing units. In this case, the polishing pads of the plurality of polishing units may be respectively restrained to the polishing head by the polishing pad restraint portion.

In addition, the substrate processing apparatus may include a conditioner (not shown) for modifying the outer surface of the polishing pad 1220 (the surface in contact with the substrate W).

For example, the conditioner may be disposed on an outer region of the substrate W, and the fine pores formed on the surface of the polishing pad 1220 may be finely cut by pressing the surface (bottom surface) of the polishing pad 1220 to a predetermined pressing force. Modify it to appear on the surface. In other words, the conditioner finely cuts the outer surface of the polishing pad 1220 so that numerous foamed pores, which serve to contain a slurry of abrasive and chemical mixed on the outer surface of the polishing pad 1220, are not blocked. The slurry filled in the foamed pores of 1220 is smoothly supplied to the substrate (W). Preferably, the conditioner is rotatably provided and rotates in contact with the outer surface (bottom surface) of the polishing pad 1220.

In addition, referring to FIG. 11, the polishing part includes a retainer 1130 provided to protrude on the outer surface of the surface pad 1120 to surround the circumference of the substrate W. As shown in FIG.

The retainer 1130 is polished at the edge portion of the substrate W when the polishing pad 1220 of the polishing unit 1200 enters the inner region of the substrate W from the outer region of the substrate W during the polishing process. Minimization of the rebounding of the pad 1220 (bounced phenomenon), and dead zone (grinding by the polishing pad) at the edge of the substrate W due to the rebounding of the polishing pad 1220 Area that is not done).

More specifically, the retainer 1130 is formed to penetrate the substrate receiving portion 1130a corresponding to the shape of the substrate W, and the substrate W is formed outside the surface pad 1120 in the substrate receiving portion 1130a. It rests on the surface.

In the state in which the substrate W is accommodated in the substrate accommodating part 1130a, the surface height of the retainer 1130 has a height similar to the surface height of the edge of the substrate W. FIG. In this way, the polishing pad during the polishing process is performed by making the outer region (the retainer 1130 region) of the substrate W adjacent to the edge portion of the substrate W and the edge portion of the substrate W have a similar height. The inner region of the substrate W while 1220 moves from the outer region of the substrate W to the inner region of the substrate W or from the inner region of the substrate W to the outer region of the substrate W The rebound phenomenon of the polishing pad 1220 according to the height deviation between the outer and outer regions may be minimized, and an advantageous effect of minimizing the occurrence of the non-polishing region due to the rebound phenomenon may be obtained.

In addition, the retainer 1130 is provided to protrude from the mounting surface of the substrate mounting portion 1100 on which the substrate W is mounted, and the polishing pad 1220 of the polishing unit 1200 has an upper surface and a substrate W of the retainer 1130. It is configured to polish the upper surface of the substrate (W) passing through the edge of the substrate (W) in contact with the upper surface of the ().

Preferably, at the polishing start position where the polishing process of the substrate W by the polishing pad 1220 of the polishing unit 1200 starts, a portion of the polishing pad 1220 is in contact with the upper surface of the retainer 1130, and polishing The other part of the pad 1220 is disposed in contact with the upper surface of the substrate W.

As such, the polishing unit 1200 is started by causing the polishing pad 1220 of the polishing unit 1200 to be simultaneously in contact with the upper surface of the substrate W and the upper surface of the retainer 1130 at the polishing start position. When the polishing pad 1220 of) passes through the edge of the substrate W, an advantageous effect of suppressing the rebound of the polishing pad 1220 from the substrate W can be obtained.

Preferably, the retainer 1130 is formed to have a thickness (T1 ≧ T2) that is thinner or equal to the substrate (W). As such, by forming the retainer 1130 to have a thickness T2 thinner or the same as that of the substrate W, the polishing pad 1220 moves from the outer region of the substrate W to the inner region of the substrate W. FIG. In doing so, an advantageous effect of preventing the occurrence of a rebound phenomenon due to the collision of the polishing pad 1220 and the retainer 1130 can be obtained.

The retainer 1130 may be formed of various materials according to required conditions. However, since the polishing pad 1220 is in contact with the retainer 1130, it is desirable to form the retainer 1130 with a material such as polyethylene (PE), unsaturated polyester (UPE), etc., which is relatively less abrasive during the polishing process. It is right.

On the other hand, the unloading part is provided for unloading the substrate W on which the polishing process is completed, from the polishing part.

The unloading part may be formed in various structures capable of unloading the substrate W in the polishing part, and the present invention is not limited or limited by the structure of the unloading part.

For example, the unloading part may include a plurality of unloading feed rollers (not shown) spaced apart from each other at a predetermined interval, and the substrate W supplied on the plurality of unloading feed rollers may have an unloading feed roller. As it rotates, it is mutually cooperatively conveyed by a plurality of unloading feed rollers. In some cases, the unloading part may be configured to include a circulation belt which is circulated and rotated by the unloading feed roller.

13 is a diagram for describing a substrate processing apparatus according to another exemplary embodiment of the present invention, and FIG. 14 is a diagram for describing a preparation stage as a substrate processing apparatus according to the present invention. In addition, the same or equivalent reference numerals are given to the same or equivalent components as those described above, and detailed description thereof will be omitted.

Referring to FIG. 13, according to another embodiment of the present invention, a substrate processing apparatus includes a conveyance belt 1120 'and a conveyance belt 1120' in which a substrate W is seated on an outer surface while moving along a predetermined path. A substrate support 1110 which is disposed inside the substrate and supports the bottom surface of the substrate W with the transfer belt 1120 'interposed therebetween, and a polishing unit that moves with respect to the substrate W and polishes the upper surface of the substrate W; (1200).

The transfer belt 1120 'may be configured to move along a defined path in a variety of ways depending on the desired conditions and design specifications. For example, the transfer belt 1120 ′ may be configured to rotate in a predetermined path.

Circular rotation of the transfer belt 1120 'may be done in a variety of ways depending on the requirements and design specifications. For example, the transfer belt 1120 ′ is circulated and rotated along a path defined by the roller unit 1150, and the substrate W seated on the transfer belt 1120 ′ by the circulating rotation of the transfer belt 1120 ′. It is conveyed along this linear movement path.

The movement path (eg, the circulation path) of the transfer belt 1120 ′ may be variously changed according to required conditions and design specifications. For example, the roller unit 1150 may include a first roller 1152 and a second roller 1154 disposed to be horizontally spaced apart from the first roller 1152, and the conveying belt 1120 ′ may be a first roller. 1152 and the second roller 1154 rotate in an infinite loop manner.

For reference, the outer surface of the transfer belt 1120 'means an outer surface exposed to the outside of the transfer belt 1120', and the substrate W is seated on the outer surface of the transfer belt 1120 '. . The inner surface of the transfer belt 1120 'means an inner surface of the transfer belt 1120' to which the first roller 1152 and the second roller 1154 are in contact.

In addition, any one or more of the first roller 1152 and the second roller 1154 may be configured to selectively linearly move in a direction approaching and spaced apart from each other. For example, the second roller 1154 to which the first roller 1152 is fixed may be configured to linearly move in a direction approaching and spaced apart from the first roller 1152. As such, the tension of the transfer belt 1120 ′ can be adjusted by allowing the second roller 1154 to approach and be spaced apart from the first roller 1152 according to manufacturing tolerances and assembly tolerances.

Here, adjusting the tension of the conveying belt 1120 'is defined as adjusting the tension by pulling the conveying belt 1120' tightly or loosening it. In some cases, it is also possible to provide a separate tension adjusting roller and to adjust the tension of the transfer belt by moving the tension adjusting roller. However, it is preferable to move any one or more of the first roller and the second roller to improve the structure and space utilization.

Previously, in order to load the substrate supplied to the loading part into the polishing part, a separate pickup device (for example, a substrate adsorption device) had to be used to pick up the substrate from the loading part, and then put the substrate back on the polishing part. Therefore, there is a problem that the processing time increases so that the time required to load the substrate takes several seconds to several tens of seconds. Furthermore, in order to unload a substrate which has been polished previously into an unloading part, the substrate is picked up from the polishing part by using a separate pick-up device (for example, a substrate adsorption device), and then the substrate is returned to the unloading part. Since it had to be laid down, there is a problem that the processing time increases to take several seconds to several tens of seconds to unload the substrate.

However, in the present invention, in the state in which the substrate W supplied to the loading part is directly transferred to the transfer belt 1120 'which is circulated and rotated, the polishing process is performed on the substrate W, and the substrate W is transferred to the transfer belt ( By being directly transferred to the unloading part on 1120 ', an advantageous effect of simplifying the processing process of the substrate W and shortening the processing time can be obtained.

In addition, the present invention by removing the separate pick-up process when loading and unloading the substrate (W), by allowing the substrate (W) to be processed in an in-line manner using the transfer belt 1120 'rotates, Advantageous effects of simplifying the loading time and unloading process of (W) and reducing the time required for loading and unloading the substrate (W) can be obtained.

Furthermore, in the present invention, since it is not necessary to provide a pickup device for picking up the substrate W during loading and unloading of the substrate W, it is possible to simplify the equipment and equipment and to improve the space utilization. Can be obtained.

As another example of the conveying belt, the conveying belt may be wound in one direction to another and may be configured to convey the substrate W (not shown).

Here, the transfer belt is wound from one direction to the other, reel to reel winding method of the conventional cassette tape (wound on the first reel and then again opposite to the second reel) It is defined as moving along a moving trajectory in the form of an open loop (winding) in the manner of winding.

1 and 14, according to another embodiment of the present invention, the substrate processing apparatus is disposed outside the substrate mounting unit 1100 and the preparation stage 1300 on which the subsequent polishing pad 1220 ′ is prepared. ) May be included.

The preparation stage 1300 is prepared with a subsequent polishing pad 1220 'to be replaced. For example, the preparation stage 1300 may be provided to be elevated in an up and down direction, and a subsequent polishing pad 1220 ′ is provided on an upper surface of the preparation stage 1300.

Once used, the polishing pad 1220 is separated from the polishing unit 1200 and discarded, and as the polishing unit 1200 approaches the top surface of the preparation stage 1300, subsequent polishing pads 1220'are replaced with polishing pad restraints. 1230 is coupled to and restrained by the polishing pad retainer.

On the other hand, Figure 15 is a substrate processing apparatus according to the present invention, a view for explaining another embodiment of the polishing pad. In addition, the same or equivalent reference numerals are given to the same or equivalent components as those described above, and detailed description thereof will be omitted.

Referring to FIG. 15, according to another exemplary embodiment of the present disclosure, the polishing pad 1220 ′ is integrally protruded from the polishing plate portion 1222 ′ and the polishing plate portion 1222 ′ in contact with the substrate W, and polished. Constraints 1224 'constrained to polishing head 1210 to move plate portion 1222'.

More specifically, the restraint portion 1224 ′ is provided to protrude integrally with the polishing plate portion 1222 ′ to restrain the side surface of the polishing pad retainer 1216.

In this case, the restraining part 1224 ′ may be formed in various structures to protrude integrally with the polishing plate part 1222 ′ to restrain the side surface of the polishing pad retainer 1216. As an example, the constraint portion 1224 ′ is formed in a ring shape along the circumference of the polishing pad retainer 1216.

In this manner, the restraining portion 1224 'is formed in a ring shape, and the restraining portion 1224' is disposed so as to surround the entire circumference of the polishing pad retainer 1216, thereby along the radial direction of the polishing pad 1220. Since the movement of the polishing pad 1220 'can all be limited, an advantageous effect of more stably restricting the movement of the polishing pad 1220' with respect to the polishing head 1210 can be obtained.

Further, the polishing pad retainer 1216 is inserted into a pocket (space) formed inside the constraining portion 1224 'formed in a ring shape, so that the outer surface of the polishing pad retainer 1216 is formed on the inner surface of the constraining portion 1224'. By contacting and causing the polishing pad 1220 'and the polishing pad retainer 1216 to restrain each other, eliminating the use of a separate holding member for securing the constraint portion 1224' to the side of the polishing pad retainer 1216. It is possible to achieve the advantageous effect of simplifying the mounting process of the restraint portion and shortening the mounting time.

In some cases, a plurality of restraints (for example, three restraints disposed at 120 degree intervals) are provided to be spaced apart along the circumference of the polishing plate, and the plurality of restraints prevent the sliding of the polishing pad against the polishing head. It is also possible to be constrained.

Preferably, the abrasive plate portion 1222 'and the constraint portion of the polishing pad 1220' are formed of different materials, and the constraint portion 1224 'is formed of a material having a higher hardness than the abrasive plate portion 1222'. For example, the abrasive plate portion 1222 ′ and the constraint portion 1224 ′ may be formed by double injection.

This is to more stably maintain the bonding state of the polishing pad 1220 ′ to the polishing unit 1200.

That is, it is also possible to form both an abrasive plate part and a restraint part with a flexible material (for example, polyurethane). However, as the restraint part is formed of a flexible material, if a floating phenomenon or a warpage phenomenon occurs in the restraint part during the polishing process, there is a problem in that the bonding state of the polishing pad to the polishing unit cannot be stably maintained.

Accordingly, in the present invention, the restricting portion 1224 'is formed of a hard material having a hardness higher than that of the abrasive plate portion 1222', thereby suppressing deformation of the restricting portion 1224 ', thereby restraining the restricting portion 1224'. The advantageous effect of stably maintaining the restrained state can be obtained.

On the other hand, Figures 16 and 17 is a substrate processing apparatus according to the present invention, a view for explaining the membrane, Figure 18 is a substrate processing apparatus according to the present invention, for explaining the pressing force applied to the polishing pad by the membrane Drawing. 19 is a view for explaining another example of a pressing force applied to a polishing pad by a membrane as a substrate processing apparatus according to the present invention, and FIG. 20 is a substrate processing apparatus according to the present invention and a polishing pad by a membrane. It is a figure for demonstrating another example of the pressing force applied to. In addition, the same or equivalent reference numerals are given to the same or equivalent components as those described above, and detailed description thereof will be omitted.

16 to 20, according to another embodiment of the present invention, a plurality of independent pressure chambers C1-1, C1-2, C2-1, C2-2, C2-3) is formed, and the first pressing force applied to the substrate W at the center portion of the polishing pad 1220 is greater than the second pressing force applied to the substrate W at the edge portion of the polishing pad 1220. .

This is to adjust the polishing amount for each region of the polishing pad 1220 and to increase the polishing uniformity of the substrate W. FIG.

That is, in the manner in which the polishing pad rotates with respect to the fixed substrate and polishing is performed, the polishing amount may be uneven due to the difference in the linear velocity (v = rw) between the center portion of the polishing pad and the edge portion of the polishing pad.

In particular, since the linear velocity at the edge of the polishing pad is greater than the linear velocity at the central portion of the polishing pad, the polishing amount by the edge portion of the polishing pad may appear larger than the polishing amount by the center portion of the polishing pad, and thus the substrate Polishing uniformity deviation may occur.

However, according to the present invention, the first pressing force applied to the substrate W at the center portion of the polishing pad 1220 is greater than the second pressing force applied to the substrate W at the edge portion of the polishing pad 1220. Since the polishing amount of the polishing pad 1220 may be adjusted differently according to the center portion and the edge portion of the polishing pad 1220, the thickness variation of the substrate W may be removed to uniformly adjust the thickness profile of the substrate W as a whole. An advantageous effect of improving the polishing quality of the film can be obtained.

More specifically, the bottom surface (bottom plate) of the membrane 1214 for pressing the polishing pad 1220 includes a plurality of pressing zones Z1 and Z2, and the plurality of pressing zones Z1 and Z2 are applied to different pressing forces. The polishing pad 1220 is pressed.

Preferably, the pressurized regions Z1 and Z2 of the membrane 1214 are divided along the radial direction of the membrane 1214 (eg, divided into a ring shape). For example, the membrane 1214 may be formed to surround a circumference of the first pressing area Z2 and the first pressing area Z2 disposed in the central area of the polishing pad 1220 and the edge of the polishing pad 1220. And a second pressing zone Z1 disposed in the zone.

Here, the first pressing area Z2 of the membrane 1214 refers to a high first pressing force P2 ″, P2 ′, P for pressing the center portion of the polishing pad 1220 to the substrate. The second pressing area Z1 of the membrane 1214 is a low second pressing force P1 ′, P1 for pressing the edge of the polishing pad 1220 to the substrate. ) Is defined as an area for applying the edge of the polishing pad 1220.

Preferably, the first pressing region Z2 and the second pressing region Z1 are arranged concentrically with each other.

In addition, the first pressing area Z2 may be further divided into a plurality of first division zones Z2-1, Z2-2, and Z2-3. Here, the first division zones Z2-1, Z2-2, and Z2-3 are defined by dividing the first pressing zone Z2 into a plurality of zones that can be individually controlled.

More specifically, the first pressing zone Z2 may include a plurality of first division zones Z2-1, Z2-2, and Z2-3 divided along the radial direction of the membrane 1214, respectively. The pressing forces of the first division zones Z2-1, Z2-2, Z2-3 are individually controlled. For example, the first pressing area Z2 may include three first division zones Z2-1, Z2-2, and Z2-3. In some cases, the first pressing zone may include four or more first division zones, or two or less first division zones, and the present invention may be limited by the number and spacing (width along the radial direction) of the first division zone. It is not limited.

Similarly, the second pressing region Z1 may be further subdivided into a plurality of second division zones Z1-1 and Z1-2. Here, the second divided zones Z1-1 and Z1-2 are defined as being divided into a plurality of zones in which the second pressing region Z1 is individually controllable.

More specifically, the second pressurization zone Z1 may include a plurality of second division zones Z1-1 and Z1-2 divided along the radial direction of the membrane 1214, and each second division zone The pressing force of (Z1-1, Z1-2) is individually controlled. For example, the second pressing area Z1 may include two second division zones Z1-1 and Z1-2. In some cases, the second pressing region may include three or more second divisional zones, and the present invention is not limited or limited by the number and spacing (width along the radial direction) of the second divisional zones.

In this way, the first pressing zone Z2 is subdivided into a plurality of first division zones Z2-1, Z2-2, and Z2-3, and the second pressing zone Z1 is divided into a plurality of second division zones Z1. By subdividing into -1, Z1-2, it is possible to obtain an advantageous effect of further subdividing and precisely adjusting the pressure distribution in the first pressing region Z2 and the pressure distribution in the second pressing region Z1. .

In the second pressing region Z1, a pressing force smaller than the first pressing region Z2 is applied to the polishing pad 1220. This is to minimize the variation in polishing amount due to the linear velocity at the edge of the polishing pad 1220 being relatively higher than the linear velocity at the center of the polishing pad 1220.

16 and 17, a second pressure chamber C1 for applying a second pressing force to the second pressing region Z1 is formed at an upper portion of the second pressing region Z1, and the first pressing region Z2. The first pressure chamber C2 is applied to the first pressing area Z2 to apply the first pressing pressures P2 ″, P2 ′ and P greater than the second pressing pressures P1 ′ and P1.

More specifically, the second pressure chamber C1 includes a plurality of second divided pressure chambers C1- that apply the pressing forces P1 ′ and P1 to the plurality of second divided zones Z1-1 and Z1-2 independently. 1, C1-2, and the first pressure chamber C2 independently has a pressing force P2 ″, P2 ′, P independently of the plurality of first division zones Z2-1, Z2-2, Z2-3. It includes a plurality of first divided pressure chamber (C2-1, C2-2, C2-3) for applying.

The pressure profile applied to the polishing pad by the membrane 1214 may vary in accordance with the required conditions and design specifications.

Preferably, referring to FIG. 18, in the plurality of first division zones Z2-1, Z2-2, and Z2-3, the pressing force P2 ″ gradually decreases from the center to the outside along the radial direction of the membrane 1214. > P2 '> P is applied to the plurality of second division zones Z1-1 and Z1-2, and the pressing force P1'> P1 gradually decreases from the inner side to the outer side along the radial direction of the membrane 1214. Is applied.

More preferably, the pressure profile applied to the polishing pad 1220 by the membrane 1214 is formed in the shape of an arc (semi-spherical shape) in which an inflection point is located at the center of the polishing pad 1220. In other words, the pressure profile applied to the polishing pad 1220 by the membrane 1214 has a high center (P2 ", P2 ', P2) and a low edge (P1', P1) arc shape. Is formed.

For reference, the pressure profile applied to the polishing pad 1220 by the membrane 1214 is stepwise in steps for each of the divided zones Z2-1, Z2-2, Z2-3, Z1-1, and Z1-2. Although it can be shown to achieve, it is possible to implement the pressure profile in the form of an arc by averaging or subdividing the pressing force in each divided zone (Z2-1, Z2-2, Z2-3, Z1-1, Z1-2).

In this way, the pressing force applied to the polishing pad 1220 is increased at the center of the polishing pad and gradually decreases toward the edges, whereby the variation in polishing amount due to the linear velocity variation along the radial direction of the polishing pad 1220 is obtained. An advantageous effect of minimization can be obtained.

In some cases, as shown in FIG. 19, the pressure profile applied to the polishing pad 1220 by the membrane 1214 is in the form of a triangle (eg, an isosceles triangle) having an inflection point at the center of the polishing pad 1220. The pressure applied to the polishing pad 1220 may be linearly reduced from the center of the polishing pad 1220 to the edge of the polishing pad 1220.

Similarly, the pressure profile applied to the polishing pad 1220 by the membrane 1214 is stepwise to form each step (Z2-1, Z2-2, Z2-3, Z1-1, Z1-2). Although it may appear, it is possible to implement a linear triangular pressure profile by averaging or subdividing the pressing force in each divided zone (Z2-1, Z2-2, Z2-3, Z1-1, Z1-2).

Alternatively, as shown in FIG. 20, the pressure profile applied to the polishing pad 1220 by the membrane 1214 is formed uniformly (P2) at the center and the radius of the membrane 1214 at the edge. It may also be formed in the form of gradually decreasing (P1 ', P1) from the inner side to the outer side in the direction.

Here, the pressure profile applied to the polishing pad 1220 is uniform in the center, which means that the plurality of first division zones Z2-1, Z2-2, and Z2- forming the first pressing region Z2 are provided. In 3), it is defined that a pressing force in a uniform range is applied. Alternatively, a pressing force in a uniform range may be applied to the second divided zones Z1-1 and Z1-2, or a pressing force may be applied to form a step in step.

21 and 22 are views for explaining another embodiment of the membrane as the substrate processing apparatus according to the present invention. In addition, the same or equivalent reference numerals are given to the same or equivalent components as those described above, and detailed description thereof will be omitted.

21 and 22, according to another embodiment of the present invention, it is also possible to form the membrane 1214 in a double structure.

More specifically, the membrane 1214 includes a first membrane 1214a in contact with the polishing pad 1220, and a second membrane 1214b positioned above the first membrane 1214a.

For example, referring to FIG. 21, the first membrane 1214a extends upwardly around an edge of the first bottom plate 1214a 'and the first bottom plate 1214a' that contact the polishing pad 1220. And a first side plate 1214a ". The second membrane 1214b includes a second bottom plate 1214b 'positioned above the first bottom plate 1214a' and a second bottom plate ( 1214b ') and includes a partition 1214b ", which extends over the top surface and forms a plurality of pressure chambers.

In addition, the upper surface of the first membrane 1214a is provided with a convex protrusion 1214c for positioning and restraining the position of the second membrane 1214b with respect to the first membrane 1214a. For example, the constraining protrusion 1214c may be formed in a ring shape, and the second bottom plate 1214b 'may be constrained by being inserted into an inner circumferential surface of the constraining protrusion 1214c. As such, the arrangement state of the second membrane 1214b with respect to the first membrane 1214a is formed by forming the constraining protrusion 1214c on the upper surface of the first membrane 1214a and allowing the second membrane 1214b to be restrained. It can be stably maintained, it is possible to obtain an advantageous effect of stably transmitting the pressing force to the polishing pad 1220. Alternatively, it is also possible to bond the second membrane to the upper surface of the first membrane or to fabricate the first membrane and the second membrane integrally by double injection molding.

At this time, the first membrane 1214a and the second membrane 1214b may be formed of the same or similar material, the present invention is limited or limited by the material of the first membrane 1214a and the second membrane 1214b It is not.

Alternatively, the first membrane 1214a and the second membrane 1214b may be formed of different materials. For example, the first membrane 1214a and the second membrane 1214b are formed of materials having different rigidities. Here, stiffness is defined as including any one or more of stiffness in the tensile direction, the bending direction, and the compression direction. Preferably, the second membrane 1214b is formed of a material having a relatively lower rigidity than the first membrane 1214a.

For example, at least one of the first membrane 1214a and the second membrane 1214b is at least one of a textile textile, a metallic textile, rubber, silicone, and polyurethane. It can be formed using. In some cases, it is also possible to form the second membrane made of a material having no elasticity.

As another example, referring to FIG. 22, a first bottom plate 1214a 'contacting the polishing pad 1220 and a first side plate 1214a extending upwardly around an edge of the first bottom plate 1214a'. The second membrane 1214b includes a second bottom plate 1214b 'positioned above the first bottom plate 1214a' and an upper surface of the second bottom plate 1214b '. And a partition 1214b "forming a plurality of pressure chambers, and extending upwardly around an edge of the second bottom plate 1214b 'and positioned on an inner surface of the first side plate 1214a". Include ').

The second side plate 1214b "'is located in close contact with the inner surface of the first side plate 1214a", whereby the arrangement state of the second membrane 1214b with respect to the first membrane 1214a can be stably maintained.

As described above, according to the present invention, a pressing force (first pressing force) larger than the pressing force (second pressing force) applied to the edge portion of the membrane 1214 is applied to the center portion of the membrane 1214, thereby providing Since the polishing amount can be adjusted differently for each region (edge portion vs. center portion), the variation in polishing amount due to the difference in linear velocity of each region of the polishing pad 1220 can be minimized, and the polishing uniformity of the substrate W can be obtained. Can be.

In addition, in a manner in which a uniform pressing force is applied to the membrane as a whole, the polishing pad is unevenly produced by regions, so that a replacement cycle (for example, four polishing pads are used to polish a substrate) is short, and the polishing pad 1220 is used. There is a problem that it is difficult to increase the uniform polishing section (area that can be polished uniformly with one polishing pad). However, according to the present invention, by applying a different pressing force for each region of the membrane 1214, the polishing pad 1220 minimizes the uneven wear phenomenon of the polishing pad (for example, three polishing pads are used to polish the substrate) ) May be extended, and an advantageous effect of increasing the processing efficiency of the substrate W may be obtained by increasing the uniform polishing section by the polishing pad 1220.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and modified within the scope of the present invention without departing from the spirit and scope of the present invention described in the claims below. It will be appreciated that it can be changed.

1010: substrate processing apparatus 1020: gantry unit
1022: X-axis gantry 1024: Y-axis gantry
1100: substrate support 1110: substrate support
1120: Surface pad 1120 ': Transfer belt
1130: retainer 1130a: substrate holding part
1200: polishing unit 1210: polishing head
1212 body portion 1214 membrane
1216: polishing pad retainer 1216a: retainer extension
1217: fixing groove 1219: ring-shaped intermediate member
1220: polishing pad 1222: polishing plate portion
1224: edge engaging plate portion 1226: fixing protrusion
1228: guide protrusion 1228a: tapered portion
1229: Friction pad 1230,1230 ': Polishing pad restraint
1231: restraining member 1232: first magnetic body
1234: the second magnetic material 1300: the preparation stage

Claims (49)

A substrate processing apparatus in which a polishing step of a substrate is performed,
A polishing pad for polishing the upper surface of the substrate;
A polishing head having a membrane in contact with an upper surface of the polishing pad, the polishing head moving with respect to the substrate;
Substrate processing apparatus comprising a.
The method of claim 1,
On the upper portion of the membrane is formed a plurality of independent pressure chamber,
And a first pressing force applied to the substrate at the center of the polishing pad is greater than a second pressing force applied to the substrate at the edge of the polishing pad.
The method of claim 2,
The bottom surface of the membrane for pressing the polishing pad is divided into a plurality of pressing areas along the radial direction of the membrane,
And the plurality of pressure chambers apply different pressing pressures to the plurality of pressing regions individually.
The method of claim 3,
The membrane includes a first pressing area and a second pressing area formed to surround a circumference of the first pressing area and disposed at an edge area of the polishing pad,
A second pressure chamber is formed above the second pressing region to apply the second pressing pressure to the second pressing region.
And a first pressure chamber configured to apply the first pressing force greater than the second pressing force to the first pressing area in an upper portion of the first pressing area.
The method of claim 4, wherein
And the first pressing area and the second pressing area are arranged concentrically with each other.
The method of claim 4, wherein
The first pressing area includes a plurality of first division zones divided along the radial direction of the membrane,
And the first pressure chamber includes a plurality of first divided pressure chambers to apply a pressing force to the first divided zone independently.
The method of claim 6,
Substrate processing apparatus, characterized in that the pressing force is gradually applied to the plurality of first divided zones from the center toward the outside along the radial direction of the membrane.
The method of claim 6,
And a pressing force in a uniform range is applied to the plurality of first division zones.
The method of claim 4, wherein
The second pressing area includes a plurality of second division zones divided along the radial direction of the membrane,
And the second pressure chamber includes a plurality of second divided pressure chambers to apply a pressing force independently to the second divided zone.
The method of claim 9,
Substrate processing apparatus, characterized in that the pressing force is gradually applied to the plurality of second divided zones from the inner side to the outer side along the radial direction of the membrane.
The method of claim 2,
And a pressure profile applied to the polishing pad has an arc shape in which an inflection point is located at the center of the polishing pad.
The method of claim 2,
And the pressure profile applied to the polishing pad has a triangular shape in which an inflection point is located at the center of the polishing pad.
The method of claim 2,
The membrane,
A bottom plate in contact with the polishing pad;
A partition wall formed on an upper surface of the bottom plate and forming the plurality of pressure chambers;
Substrate processing apparatus comprising a.
The method of claim 2,
The membrane,
A first membrane contacting the polishing pad;
A second membrane located above the first membrane;
Substrate processing apparatus comprising a.
The method of claim 14,
And the first membrane and the second membrane are formed of different materials.
The method of claim 14,
And the first membrane and the second membrane have different rigidities.
The method of claim 16,
The second membrane is a substrate processing apparatus, characterized in that formed of a material having a lower rigidity than the first membrane.
The method of claim 17,
At least one of the first membrane and the second membrane is a substrate processing apparatus, characterized in that formed of any one of a textile (fabric textile), a metallic textile (metalic textile), rubber, silicon, polyurethane.
The method of claim 14,
The first membrane,
A first bottom plate in contact with the polishing pad;
A first side plate extending upwardly around an edge of the first bottom plate;
Substrate processing apparatus comprising a.
The method of claim 19,
The second membrane,
A second bottom plate positioned above the first bottom plate;
A partition wall extending on an upper surface of the second bottom plate and forming the plurality of pressure chambers;
Substrate processing apparatus comprising a.
The method of claim 20,
The second membrane,
And a second side plate extending upwardly around an edge of the second bottom plate and positioned on an inner surface of the first side plate.
The method of claim 20,
And a convex protrusion protruding from an upper surface of the first bottom plate to define an arrangement position of the second membrane with respect to the first membrane.
The method of claim 1,
The membrane is a substrate processing apparatus, characterized in that formed of a flexible material deformable to correspond to the surface curvature of the substrate.
The method of claim 23, wherein
The membrane is a substrate processing apparatus, characterized in that for transmitting the pressing force for pressing the substrate to the polishing pad.
The method of claim 23, wherein
And the polishing pad is formed of a flexible material deformable to correspond to surface curvature of the substrate.
The method according to any one of claims 1 to 25,
And a polishing pad restraint portion for restraining the polishing pad with respect to the polishing head.
The method of claim 26,
And the polishing pad restraint part includes a restraining member that restrains a side surface of the polishing pad and the polishing head and restricts horizontal movement of the polishing pad with respect to the polishing head.
The method of claim 27,
The polishing head is
A main body having the membrane on the bottom thereof;
A polishing pad retainer connected to the main body and to which the polishing pad is mounted; Including,
And the restraining member restrains a side of the polishing pad and a side of the polishing pad retainer.
The method of claim 28,
The polishing pad retainer is formed in a ring shape on the outside of the membrane along the circumference of the membrane.
The method of claim 29,
The restraining member is formed in a ring shape along the circumference of the polishing pad retainer
The method of claim 29,
The restraining member is provided with a plurality of spaced apart along the circumference of the polishing pad retainer.
The method of claim 28,
The polishing pad restraint portion,
A first magnetic body provided on the polishing pad;
A second magnetic body provided in the polishing pad retainer so as to face the first magnetic body,
And the polishing pad retainer and the polishing pad are coupled by mutual attraction between the first magnetic material and the second magnetic material.
33. The method of claim 32,
And the first magnetic body and the second magnetic body are formed in a ring shape along the circumferential direction of the polishing pad retainer.
The method of claim 28,
The polishing pad restraint portion,
And a suction hole formed in the polishing pad retainer and applying a suction pressure to the polishing pad to constrain the polishing pad to the polishing pad retainer.
The method of claim 34, wherein
And a guide protrusion accommodated in the suction hole in the polishing pad.
The method according to any one of claims 1 to 25,
The polishing pad,
An abrasive plate portion in contact with the substrate;
An edge coupling plate portion formed at an edge of the polishing plate portion and coupled to the polishing head;
Substrate processing apparatus comprising a.
The method of claim 36,
And the abrasive plate portion and the edge bonding plate portion are formed of different materials.
The method of claim 37,
And the edge bonding plate portion is formed of a material having a higher hardness than the polishing plate portion.
The method of claim 36,
Fixing protrusions are formed on the upper surface of the edge coupling plate portion,
The polishing head has a substrate processing apparatus, characterized in that the fixing groove for receiving the fixing projections are formed.
The method according to any one of claims 1 to 25,
And the polishing pad is formed to have a smaller size than the substrate and moves while being rotated in contact with the substrate.
The method according to any one of claims 1 to 25,
A transport belt moving along a predetermined path and seating the substrate on an outer surface thereof;
And a substrate support portion disposed below the transfer belt to support a bottom surface of the substrate with the transfer belt interposed therebetween.
The method of claim 41, wherein
And a retainer disposed to protrude from the surface of the transfer belt to surround the circumference of the substrate.
The method of claim 41, wherein
The retainer is substrate processing apparatus, characterized in that formed to have a thickness thinner or the same as the substrate.
The method according to any one of claims 1 to 25,
The polishing pad,
An abrasive plate portion in contact with the substrate;
A constrained portion integrally formed in the polishing plate and constrained by the polishing head;
Substrate processing apparatus comprising a.
The method of claim 44,
And the restricting portion is formed in a ring shape along a circumference of the polishing plate portion.
The method of claim 44,
The restraining portion is provided with a plurality of spaced apart along the periphery of the polishing plate portion substrate processing apparatus.
The method of claim 44,
The polishing head is
A main body having the membrane on the bottom thereof;
A polishing pad retainer connected to the main body and to which the polishing pad is mounted; Including,
And a side surface of the polishing pad retainer is constrained to an inner surface of the restraint portion.
The method of claim 44,
And the abrasive plate portion and the restriction portion are formed of different materials.
The method of claim 48,
And the restraining part is formed of a material having a higher hardness than the polishing plate part.

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