KR102441541B1 - 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치 - Google Patents

마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치 Download PDF

Info

Publication number
KR102441541B1
KR102441541B1 KR1020170148539A KR20170148539A KR102441541B1 KR 102441541 B1 KR102441541 B1 KR 102441541B1 KR 1020170148539 A KR1020170148539 A KR 1020170148539A KR 20170148539 A KR20170148539 A KR 20170148539A KR 102441541 B1 KR102441541 B1 KR 102441541B1
Authority
KR
South Korea
Prior art keywords
heater plate
shaft
heater
gas
mount
Prior art date
Application number
KR1020170148539A
Other languages
English (en)
Korean (ko)
Other versions
KR20190052804A (ko
Inventor
정철호
이범술
Original Assignee
주식회사 미코세라믹스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 미코세라믹스 filed Critical 주식회사 미코세라믹스
Priority to KR1020170148539A priority Critical patent/KR102441541B1/ko
Priority to TW107131537A priority patent/TWI786178B/zh
Priority to PCT/KR2018/011803 priority patent/WO2019093657A1/ko
Publication of KR20190052804A publication Critical patent/KR20190052804A/ko
Application granted granted Critical
Publication of KR102441541B1 publication Critical patent/KR102441541B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020170148539A 2017-11-09 2017-11-09 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치 KR102441541B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170148539A KR102441541B1 (ko) 2017-11-09 2017-11-09 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치
TW107131537A TWI786178B (zh) 2017-11-09 2018-09-07 支架、包括該支架的加熱器及包括該加熱器的沉積裝置
PCT/KR2018/011803 WO2019093657A1 (ko) 2017-11-09 2018-10-08 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170148539A KR102441541B1 (ko) 2017-11-09 2017-11-09 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치

Publications (2)

Publication Number Publication Date
KR20190052804A KR20190052804A (ko) 2019-05-17
KR102441541B1 true KR102441541B1 (ko) 2022-09-08

Family

ID=66438875

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170148539A KR102441541B1 (ko) 2017-11-09 2017-11-09 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치

Country Status (3)

Country Link
KR (1) KR102441541B1 (zh)
TW (1) TWI786178B (zh)
WO (1) WO2019093657A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6845286B2 (ja) * 2019-08-05 2021-03-17 日本発條株式会社 ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法
KR102650161B1 (ko) * 2023-01-05 2024-03-22 주식회사 미코세라믹스 세라믹 서셉터

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100260119B1 (ko) * 1993-06-24 2000-07-01 히가시 데쓰로 반도체 처리장치
JP2010283364A (ja) 2010-07-15 2010-12-16 Sumitomo Electric Ind Ltd 半導体製造装置用保持体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9412918D0 (en) * 1994-06-28 1994-08-17 Baxendine Alar R Apparatus for uniformly heating a substrate
US20020036881A1 (en) * 1999-05-07 2002-03-28 Shamouil Shamouilian Electrostatic chuck having composite base and method
KR20040107699A (ko) * 2003-06-09 2004-12-23 주식회사 아이피에스 웨이퍼블럭 및 그를 채용한 박막증착장치
KR20050006655A (ko) * 2003-07-09 2005-01-17 삼성전자주식회사 웨이퍼 지지구조가 개선된 반도체 제조설비
KR20080063938A (ko) * 2007-01-03 2008-07-08 삼성전자주식회사 반도체 제조장치 및 그 제조장치의 히터
EP2321846A4 (en) * 2008-08-12 2012-03-14 Applied Materials Inc ELECTROSTATIC FODDER ASSEMBLY

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100260119B1 (ko) * 1993-06-24 2000-07-01 히가시 데쓰로 반도체 처리장치
JP2010283364A (ja) 2010-07-15 2010-12-16 Sumitomo Electric Ind Ltd 半導体製造装置用保持体

Also Published As

Publication number Publication date
KR20190052804A (ko) 2019-05-17
WO2019093657A1 (ko) 2019-05-16
TWI786178B (zh) 2022-12-11
TW201919117A (zh) 2019-05-16

Similar Documents

Publication Publication Date Title
JP4450106B1 (ja) 載置台構造及び処理装置
RU2295799C2 (ru) Электростатический держатель для использования в вакуумной камере высокотемпературной обработки, способ обработки подложки и расширительный узел электростатического держателя
US6646233B2 (en) Wafer stage for wafer processing apparatus and wafer processing method
JP4736564B2 (ja) 載置台装置の取付構造及び処理装置
US8203104B2 (en) Mounting table structure and heat treatment apparatus
WO2009116472A1 (ja) 載置台構造及び熱処理装置
KR101316954B1 (ko) 플라즈마 처리 장치의 기판 지지대
JP2007335425A (ja) 載置台構造及び熱処理装置
JP2009054871A (ja) 載置台構造及び処理装置
JP2001160479A (ja) セラミックスヒーターおよびそれを用いた基板処理装置
KR101598463B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR20120112661A (ko) 탑재대 구조 및 처리 장치
JP2011061040A (ja) 載置台構造及び処理装置
KR102441541B1 (ko) 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치
JP2009182139A (ja) 載置台構造及び処理装置
KR20180021301A (ko) 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치
JP2011054838A (ja) 載置台構造及び処理装置
WO2007132824A1 (ja) 加熱装置
JP5382602B2 (ja) ウエハ保持体および半導体製造装置
CN112185791A (zh) 喷头单元及具有该喷头单元的基板处理系统
JP4853432B2 (ja) 載置台構造及び処理装置
JP4165745B2 (ja) 半導体ウェハ保持装置
KR100433106B1 (ko) 피처리체의 가스처리장치
US20230377932A1 (en) Substrate support device and substrate processing apparatus including the same
KR20090123581A (ko) 히터 조립체

Legal Events

Date Code Title Description
N231 Notification of change of applicant
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant