KR102430361B1 - 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 - Google Patents

흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 Download PDF

Info

Publication number
KR102430361B1
KR102430361B1 KR1020180114448A KR20180114448A KR102430361B1 KR 102430361 B1 KR102430361 B1 KR 102430361B1 KR 1020180114448 A KR1020180114448 A KR 1020180114448A KR 20180114448 A KR20180114448 A KR 20180114448A KR 102430361 B1 KR102430361 B1 KR 102430361B1
Authority
KR
South Korea
Prior art keywords
electrostatic chuck
mask
substrate
voltage
adsorbed
Prior art date
Application number
KR1020180114448A
Other languages
English (en)
Korean (ko)
Other versions
KR20200034534A (ko
Inventor
카즈히토 카시쿠라
히로시 이시이
히로타카 카미노
Original Assignee
캐논 톡키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 톡키 가부시키가이샤 filed Critical 캐논 톡키 가부시키가이샤
Priority to KR1020180114448A priority Critical patent/KR102430361B1/ko
Priority to CN202310744709.1A priority patent/CN116752098A/zh
Priority to JP2019172226A priority patent/JP7187415B2/ja
Priority to CN201910889651.3A priority patent/CN110938800B/zh
Publication of KR20200034534A publication Critical patent/KR20200034534A/ko
Priority to KR1020220096361A priority patent/KR102505832B1/ko
Application granted granted Critical
Publication of KR102430361B1 publication Critical patent/KR102430361B1/ko
Priority to JP2022191923A priority patent/JP2023026436A/ja

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • H01L51/0008
    • H01L51/56
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020180114448A 2018-09-21 2018-09-21 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 KR102430361B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020180114448A KR102430361B1 (ko) 2018-09-21 2018-09-21 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
CN202310744709.1A CN116752098A (zh) 2018-09-21 2019-09-20 吸附装置、位置调整方法及成膜方法
JP2019172226A JP7187415B2 (ja) 2018-09-21 2019-09-20 吸着装置、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法
CN201910889651.3A CN110938800B (zh) 2018-09-21 2019-09-20 吸附装置和方法、成膜装置和方法及电子器件的制造方法
KR1020220096361A KR102505832B1 (ko) 2018-09-21 2022-08-02 흡착장치, 위치 조정 방법, 및 성막 방법
JP2022191923A JP2023026436A (ja) 2018-09-21 2022-11-30 吸着装置、マスクと基板との位置調整方法及び成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180114448A KR102430361B1 (ko) 2018-09-21 2018-09-21 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020220096361A Division KR102505832B1 (ko) 2018-09-21 2022-08-02 흡착장치, 위치 조정 방법, 및 성막 방법

Publications (2)

Publication Number Publication Date
KR20200034534A KR20200034534A (ko) 2020-03-31
KR102430361B1 true KR102430361B1 (ko) 2022-08-05

Family

ID=69906092

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020180114448A KR102430361B1 (ko) 2018-09-21 2018-09-21 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR1020220096361A KR102505832B1 (ko) 2018-09-21 2022-08-02 흡착장치, 위치 조정 방법, 및 성막 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020220096361A KR102505832B1 (ko) 2018-09-21 2022-08-02 흡착장치, 위치 조정 방법, 및 성막 방법

Country Status (3)

Country Link
JP (2) JP7187415B2 (ja)
KR (2) KR102430361B1 (ja)
CN (2) CN116752098A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111621742B (zh) * 2020-05-19 2021-07-23 武汉华星光电半导体显示技术有限公司 一种掩膜板及其应用方法、封装层的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
KR101289345B1 (ko) 2005-07-19 2013-07-29 주성엔지니어링(주) 섀도우 마스크와 이를 이용한 정렬장치
WO2008041293A1 (fr) * 2006-09-29 2008-04-10 Shin-Etsu Engineering Co., Ltd. Procédé de transfert de pièce, dispositif à mandrin électrostatique et procédé de jonction de carte
US20130199445A1 (en) * 2010-10-19 2013-08-08 Sharp Kabushiki Kaisha Vapor deposition device, vapor deposition method, and method for producing organic electroluminescence display device
WO2015171207A1 (en) * 2014-05-09 2015-11-12 Applied Materials, Inc. Substrate carrier system and method for using the same
JP6219251B2 (ja) * 2014-09-17 2017-10-25 東芝メモリ株式会社 半導体製造装置
US9570272B2 (en) * 2015-03-31 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
KR102490641B1 (ko) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 증착 장치 및 증착 방법
KR102520693B1 (ko) * 2016-03-03 2023-04-11 엘지디스플레이 주식회사 유기발광소자의 증착장치

Also Published As

Publication number Publication date
KR20220112236A (ko) 2022-08-10
JP2023026436A (ja) 2023-02-24
CN116752098A (zh) 2023-09-15
CN110938800A (zh) 2020-03-31
JP7187415B2 (ja) 2022-12-12
JP2020050953A (ja) 2020-04-02
CN110938800B (zh) 2023-06-27
KR102505832B1 (ko) 2023-03-02
KR20200034534A (ko) 2020-03-31

Similar Documents

Publication Publication Date Title
KR102427823B1 (ko) 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
CN111128828B (zh) 吸附及对准方法、吸附系统、成膜方法及装置、电子器件的制造方法
KR102505832B1 (ko) 흡착장치, 위치 조정 방법, 및 성막 방법
KR102459872B1 (ko) 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조방법
KR102430370B1 (ko) 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR102421610B1 (ko) 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조방법
KR102419064B1 (ko) 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR20210080065A (ko) 성막 장치, 성막 방법, 및 전자 디바이스의 제조방법
KR20210080048A (ko) 성막 장치, 성막 방법, 및 전자 디바이스의 제조방법
JP2020050952A (ja) 静電チャックシステム、成膜装置、被吸着体分離方法、成膜方法及び電子デバイスの製造方法
KR102411995B1 (ko) 정전척 시스템, 성막장치, 흡착 및 분리방법, 성막방법 및 전자 디바이스의 제조방법
KR102129435B1 (ko) 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
CN113005398B (zh) 成膜装置、成膜方法及电子器件的制造方法
CN113088870B (zh) 成膜装置、成膜方法及电子器件的制造方法
CN110938796B (zh) 静电吸盘系统、成膜装置、被吸附体分离方法、成膜方法及电子设备的制造方法
KR102501609B1 (ko) 성막 장치, 이를 사용한 성막 방법, 및 전자 디바이스의 제조방법
KR102085447B1 (ko) 정전척 시스템, 성막 장치, 피흡착체 분리방법, 성막 방법 및 전자 디바이스의 제조방법
KR20210109998A (ko) 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR20200034614A (ko) 정전척 시스템, 성막 장치, 피흡착체 분리방법, 성막 방법 및 전자 디바이스의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
E90F Notification of reason for final refusal
AMND Amendment
X701 Decision to grant (after re-examination)
A107 Divisional application of patent
GRNT Written decision to grant