KR102396676B1 - 화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치 - Google Patents

화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치 Download PDF

Info

Publication number
KR102396676B1
KR102396676B1 KR1020167032723A KR20167032723A KR102396676B1 KR 102396676 B1 KR102396676 B1 KR 102396676B1 KR 1020167032723 A KR1020167032723 A KR 1020167032723A KR 20167032723 A KR20167032723 A KR 20167032723A KR 102396676 B1 KR102396676 B1 KR 102396676B1
Authority
KR
South Korea
Prior art keywords
substrate
buffing pad
buffing
pad
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167032723A
Other languages
English (en)
Korean (ko)
Other versions
KR20160145810A (ko
Inventor
스티븐 엠. 주니가
브라이언 제이. 브라운
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20160145810A publication Critical patent/KR20160145810A/ko
Application granted granted Critical
Publication of KR102396676B1 publication Critical patent/KR102396676B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H01L21/67046—
    • B08B1/001—
    • B08B1/04—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/36—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis orthogonal to the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H01L21/02096—
    • H01L21/304—
    • H01L21/30625—
    • H01L21/68764—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020167032723A 2014-04-23 2015-04-17 화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치 Active KR102396676B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/260,210 2014-04-23
US14/260,210 US9844800B2 (en) 2014-04-23 2014-04-23 Systems, methods and apparatus for post-chemical mechanical planarization substrate cleaning
PCT/US2015/026552 WO2015164220A1 (en) 2014-04-23 2015-04-17 Systems, methods and apparatus for post-chemical mechanical planarization substrate cleaning

Publications (2)

Publication Number Publication Date
KR20160145810A KR20160145810A (ko) 2016-12-20
KR102396676B1 true KR102396676B1 (ko) 2022-05-12

Family

ID=54333040

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167032723A Active KR102396676B1 (ko) 2014-04-23 2015-04-17 화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치

Country Status (6)

Country Link
US (1) US9844800B2 (https=)
JP (1) JP6556756B2 (https=)
KR (1) KR102396676B1 (https=)
CN (1) CN106233432B (https=)
TW (1) TWI652752B (https=)
WO (1) WO2015164220A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201906815XA (en) * 2014-08-26 2019-08-27 Ebara Corp Substrate processing apparatus
US11664213B2 (en) * 2019-12-26 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Bevel edge removal methods, tools, and systems
US11545371B2 (en) * 2020-06-23 2023-01-03 Applied Materials, Inc. Platen shield cleaning system
US12138732B2 (en) * 2020-12-14 2024-11-12 Applied Materials, Inc. Polishing system apparatus and methods for defect reduction at a substrate edge
CN113078078A (zh) * 2021-03-19 2021-07-06 长鑫存储技术有限公司 晶圆清洗方法及晶圆清洗装置
US20240316598A1 (en) * 2023-03-20 2024-09-26 Applied Materials, Inc. Compression gap control for pad-based chemical buff post cmp cleaning

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001018165A (ja) * 1999-04-06 2001-01-23 Applied Materials Inc 改良型ｃｍｐ研磨パッド
WO2004105113A1 (ja) * 2003-05-26 2004-12-02 Nikon Corporation Ｃｍｐ研磨用研磨体、ｃｍｐ研磨装置、ｃｍｐ研磨方法、及び半導体デバイスの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5551986A (en) * 1995-02-15 1996-09-03 Taxas Instruments Incorporated Mechanical scrubbing for particle removal
JPH08250455A (ja) * 1995-02-15 1996-09-27 Texas Instr Inc <Ti> 化学機械的に研磨される半導体ウェーハ面から汚染粒子を除去する方法および装置
JP4048396B2 (ja) * 1998-04-21 2008-02-20 旭硝子株式会社 板状材への加圧方法及び加圧装置
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6269510B1 (en) * 1999-01-04 2001-08-07 International Business Machines Corporation Post CMP clean brush with torque monitor
US7232752B2 (en) 2001-04-24 2007-06-19 United Microelectronics Corp. Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operation
JP2003039305A (ja) * 2001-08-01 2003-02-13 Minolta Co Ltd 研磨装置
US7288165B2 (en) * 2003-10-24 2007-10-30 Applied Materials, Inc. Pad conditioning head for CMP process
US7655565B2 (en) * 2005-01-26 2010-02-02 Applied Materials, Inc. Electroprocessing profile control
JP2006303180A (ja) * 2005-04-20 2006-11-02 Matsushita Electric Ind Co Ltd 基板の固定方法
US7344989B2 (en) 2005-08-19 2008-03-18 Nec Electronics America, Inc. CMP wafer contamination reduced by insitu clean
JP4814677B2 (ja) * 2006-03-31 2011-11-16 株式会社荏原製作所 基板保持装置および研磨装置
JP2007305745A (ja) * 2006-05-10 2007-11-22 Nikon Corp 研磨体、研磨装置、これを用いた半導体デバイス製造方法およびこの方法により製造される半導体デバイス
KR101004432B1 (ko) * 2008-06-10 2010-12-28 세메스 주식회사 매엽식 기판 처리 장치
CN201887033U (zh) * 2010-11-12 2011-06-29 北大方正集团有限公司 治具及清洗机
WO2015061741A1 (en) * 2013-10-25 2015-04-30 Applied Materials, Inc Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001018165A (ja) * 1999-04-06 2001-01-23 Applied Materials Inc 改良型ｃｍｐ研磨パッド
WO2004105113A1 (ja) * 2003-05-26 2004-12-02 Nikon Corporation Ｃｍｐ研磨用研磨体、ｃｍｐ研磨装置、ｃｍｐ研磨方法、及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
JP2017514307A (ja) 2017-06-01
JP6556756B2 (ja) 2019-08-07
CN106233432B (zh) 2019-09-06
US20150306637A1 (en) 2015-10-29
CN106233432A (zh) 2016-12-14
TW201603165A (zh) 2016-01-16
WO2015164220A1 (en) 2015-10-29
KR20160145810A (ko) 2016-12-20
TWI652752B (zh) 2019-03-01
US9844800B2 (en) 2017-12-19

Similar Documents

Publication Publication Date Title
KR102396676B1 (ko) 화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치
US9375825B2 (en) Polishing pad conditioning system including suction
KR102229920B1 (ko) 화학 기계적 평탄화 후의 기판 버프 사전 세정을 위한 시스템, 방법 및 장치
JP5405887B2 (ja) 研磨装置及び研磨方法
US6193587B1 (en) Apparatus and method for cleansing a polishing pad
KR102128393B1 (ko) 화학적 기계적 평탄화 전 버핑 모듈을 위한 방법 및 장치
US12491605B2 (en) Chemical mechanical polishing apparatus and method
US11694909B2 (en) Brush cleaning apparatus, chemical-mechanical polishing (CMP) system and wafer processing method
US20110065365A1 (en) Grinding method and grinding apparatus for polishing pad for use in double-side polishing device
JP2005271151A (ja) 研磨装置及び研磨方法
US7210988B2 (en) Method and apparatus for reduced wear polishing pad conditioning
US9095953B2 (en) Apparatus for polishing rear surface of substrate, system for polishing rear surface of substrate, method for polishing rear surface of substrate and recording medium having program for polishing rear surface of substrate
US7883393B2 (en) System and method for removing particles from a polishing pad
JP2008068389A5 (https=)
WO2001043178A1 (en) Polishing-product discharging device and polishing device
CN114102423A (zh) 基板处理装置、研磨头和基板处理方法
KR101767059B1 (ko) 화학 기계적 기판 연마장치
JP2015044250A (ja) ポリッシング方法
JP2001127022A (ja) 研磨方法及び研磨装置
CN110281102A (zh) 清洗机构及清洗方法
KR20110107502A (ko) 웨이퍼 연마장치
KR20070027294A (ko) 화학적 기계적 연마 장비
KR20080057404A (ko) 컨디셔너

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000