KR102396676B1 - 화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치 - Google Patents

화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치 Download PDF

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KR102396676B1
KR102396676B1 KR1020167032723A KR20167032723A KR102396676B1 KR 102396676 B1 KR102396676 B1 KR 102396676B1 KR 1020167032723 A KR1020167032723 A KR 1020167032723A KR 20167032723 A KR20167032723 A KR 20167032723A KR 102396676 B1 KR102396676 B1 KR 102396676B1
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substrate
buffing pad
buffing
pad
assembly
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KR20160145810A (ko
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스티븐 엠. 주니가
브라이언 제이. 브라운
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B08B1/001—
    • B08B1/04—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/36—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis orthogonal to the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020167032723A 2014-04-23 2015-04-17 화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치 Active KR102396676B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/260,210 US9844800B2 (en) 2014-04-23 2014-04-23 Systems, methods and apparatus for post-chemical mechanical planarization substrate cleaning
US14/260,210 2014-04-23
PCT/US2015/026552 WO2015164220A1 (en) 2014-04-23 2015-04-17 Systems, methods and apparatus for post-chemical mechanical planarization substrate cleaning

Publications (2)

Publication Number Publication Date
KR20160145810A KR20160145810A (ko) 2016-12-20
KR102396676B1 true KR102396676B1 (ko) 2022-05-12

Family

ID=54333040

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167032723A Active KR102396676B1 (ko) 2014-04-23 2015-04-17 화학 기계적 평탄화 후의 기판 세정을 위한 시스템, 방법 및 장치

Country Status (6)

Country Link
US (1) US9844800B2 (enExample)
JP (1) JP6556756B2 (enExample)
KR (1) KR102396676B1 (enExample)
CN (1) CN106233432B (enExample)
TW (1) TWI652752B (enExample)
WO (1) WO2015164220A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201906815XA (en) * 2014-08-26 2019-08-27 Ebara Corp Substrate processing apparatus
US11664213B2 (en) * 2019-12-26 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Bevel edge removal methods, tools, and systems
US11545371B2 (en) * 2020-06-23 2023-01-03 Applied Materials, Inc. Platen shield cleaning system
US12138732B2 (en) * 2020-12-14 2024-11-12 Applied Materials, Inc. Polishing system apparatus and methods for defect reduction at a substrate edge
CN113078078A (zh) * 2021-03-19 2021-07-06 长鑫存储技术有限公司 晶圆清洗方法及晶圆清洗装置
US20240316598A1 (en) * 2023-03-20 2024-09-26 Applied Materials, Inc. Compression gap control for pad-based chemical buff post cmp cleaning

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001018165A (ja) * 1999-04-06 2001-01-23 Applied Materials Inc 改良型ｃｍｐ研磨パッド
WO2004105113A1 (ja) * 2003-05-26 2004-12-02 Nikon Corporation Ｃｍｐ研磨用研磨体、ｃｍｐ研磨装置、ｃｍｐ研磨方法、及び半導体デバイスの製造方法

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US5551986A (en) * 1995-02-15 1996-09-03 Taxas Instruments Incorporated Mechanical scrubbing for particle removal
JPH08250455A (ja) * 1995-02-15 1996-09-27 Texas Instr Inc <Ti> 化学機械的に研磨される半導体ウェーハ面から汚染粒子を除去する方法および装置
JP4048396B2 (ja) * 1998-04-21 2008-02-20 旭硝子株式会社 板状材への加圧方法及び加圧装置
US6413388B1 (en) 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US6269510B1 (en) * 1999-01-04 2001-08-07 International Business Machines Corporation Post CMP clean brush with torque monitor
US7232752B2 (en) 2001-04-24 2007-06-19 United Microelectronics Corp. Method of removing contaminants from a silicon wafer after chemical-mechanical polishing operation
JP2003039305A (ja) * 2001-08-01 2003-02-13 Minolta Co Ltd 研磨装置
US7288165B2 (en) * 2003-10-24 2007-10-30 Applied Materials, Inc. Pad conditioning head for CMP process
US7655565B2 (en) * 2005-01-26 2010-02-02 Applied Materials, Inc. Electroprocessing profile control
JP2006303180A (ja) * 2005-04-20 2006-11-02 Matsushita Electric Ind Co Ltd 基板の固定方法
US7344989B2 (en) 2005-08-19 2008-03-18 Nec Electronics America, Inc. CMP wafer contamination reduced by insitu clean
JP4814677B2 (ja) * 2006-03-31 2011-11-16 株式会社荏原製作所 基板保持装置および研磨装置
JP2007305745A (ja) * 2006-05-10 2007-11-22 Nikon Corp 研磨体、研磨装置、これを用いた半導体デバイス製造方法およびこの方法により製造される半導体デバイス
KR101004432B1 (ko) * 2008-06-10 2010-12-28 세메스 주식회사 매엽식 기판 처리 장치
CN201887033U (zh) * 2010-11-12 2011-06-29 北大方正集团有限公司 治具及清洗机
KR102229920B1 (ko) * 2013-10-25 2021-03-19 어플라이드 머티어리얼스, 인코포레이티드 화학 기계적 평탄화 후의 기판 버프 사전 세정을 위한 시스템, 방법 및 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001018165A (ja) * 1999-04-06 2001-01-23 Applied Materials Inc 改良型ｃｍｐ研磨パッド
WO2004105113A1 (ja) * 2003-05-26 2004-12-02 Nikon Corporation Ｃｍｐ研磨用研磨体、ｃｍｐ研磨装置、ｃｍｐ研磨方法、及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
TWI652752B (zh) 2019-03-01
US20150306637A1 (en) 2015-10-29
US9844800B2 (en) 2017-12-19
WO2015164220A1 (en) 2015-10-29
JP6556756B2 (ja) 2019-08-07
KR20160145810A (ko) 2016-12-20
JP2017514307A (ja) 2017-06-01
CN106233432A (zh) 2016-12-14
TW201603165A (zh) 2016-01-16
CN106233432B (zh) 2019-09-06

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