KR102392485B9 - 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자 - Google Patents

페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자

Info

Publication number
KR102392485B9
KR102392485B9 KR1020210063535A KR20210063535A KR102392485B9 KR 102392485 B9 KR102392485 B9 KR 102392485B9 KR 1020210063535 A KR1020210063535 A KR 1020210063535A KR 20210063535 A KR20210063535 A KR 20210063535A KR 102392485 B9 KR102392485 B9 KR 102392485B9
Authority
KR
South Korea
Prior art keywords
same
preparing method
photoelectric element
perovskite compound
compound preparing
Prior art date
Application number
KR1020210063535A
Other languages
English (en)
Other versions
KR20210060394A (ko
KR102392485B1 (ko
Inventor
임상혁
허진혁
박진경
김봉우
Original Assignee
고려대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고려대학교 산학협력단 filed Critical 고려대학교 산학협력단
Priority to KR1020210063535A priority Critical patent/KR102392485B1/ko
Publication of KR20210060394A publication Critical patent/KR20210060394A/ko
Application granted granted Critical
Publication of KR102392485B1 publication Critical patent/KR102392485B1/ko
Publication of KR102392485B9 publication Critical patent/KR102392485B9/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
KR1020210063535A 2019-04-09 2021-05-17 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자 KR102392485B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210063535A KR102392485B1 (ko) 2019-04-09 2021-05-17 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190041598A KR20200119141A (ko) 2019-04-09 2019-04-09 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자
KR1020210063535A KR102392485B1 (ko) 2019-04-09 2021-05-17 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020190041598A Division KR20200119141A (ko) 2019-04-09 2019-04-09 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자

Publications (3)

Publication Number Publication Date
KR20210060394A KR20210060394A (ko) 2021-05-26
KR102392485B1 KR102392485B1 (ko) 2022-04-29
KR102392485B9 true KR102392485B9 (ko) 2022-07-29

Family

ID=73042852

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020190041598A KR20200119141A (ko) 2019-04-09 2019-04-09 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자
KR1020210063535A KR102392485B1 (ko) 2019-04-09 2021-05-17 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020190041598A KR20200119141A (ko) 2019-04-09 2019-04-09 페로브스카이트막, 이의 제조방법 및 이를 포함하는 광전소자

Country Status (1)

Country Link
KR (2) KR20200119141A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113097385A (zh) * 2021-03-26 2021-07-09 许昌学院 原位控制合成溴铅铯三元化合物半导体光电薄膜材料的化学方法
CN113970779A (zh) * 2021-10-12 2022-01-25 华北电力大学 一种钙钛矿填充微孔面板形成的微结构闪烁屏及制备方法
KR20240000198A (ko) 2022-06-23 2024-01-02 고려대학교 산학협력단 페로브스카이트 광전소자 및 이의 제조 방법
CN116456790B (zh) * 2023-06-19 2023-09-12 北京曜能科技有限公司 钙钛矿薄膜制备方法及钙钛矿太阳能电池、叠层电池

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1550742A4 (en) 2002-10-10 2007-01-03 Kansai Paint Co Ltd METHOD FOR PRODUCING A SEMICONDUCTOR FILM AND USE OF SEMICONDUCTOR FILM
KR101627161B1 (ko) 2013-10-25 2016-06-07 성균관대학교산학협력단 고분자 지지층을 포함하는 염료감응 태양전지, 및 이의 제조 방법
KR101609588B1 (ko) 2014-05-28 2016-04-21 광주과학기술원 광활성층 제조용 코팅조성물 및 이를 이용한 고효율 태양전지의 제조방법
KR101869915B1 (ko) * 2015-06-25 2018-06-25 재단법인 멀티스케일 에너지시스템 연구단 할로겐화 납 어덕트 화합물 및 이를 이용한 페로브스카이트 소자
WO2018070791A1 (ko) * 2016-10-12 2018-04-19 성균관대학교산학협력단 페로브스카이트 나노결정 박막, 이의 제조 방법 및 이를 포함하는 발광 소자
KR102014850B1 (ko) * 2017-07-13 2019-08-27 청주대학교 산학협력단 하이브리드 정공 수송층을 포함하는 페로브스카이트 태양전지 및 그 제조방법
KR101983094B1 (ko) * 2017-07-13 2019-05-30 청주대학교 산학협력단 하이브리드 광 흡수층을 포함하는 페로브스카이트 태양전지 및 그 제조 방법
KR101949641B1 (ko) * 2018-06-01 2019-02-18 고려대학교 산학협력단 페로브스카이트막, 이의 제조방법 및 이를 포함하는 태양전지

Also Published As

Publication number Publication date
KR20210060394A (ko) 2021-05-26
KR102392485B1 (ko) 2022-04-29
KR20200119141A (ko) 2020-10-19

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