KR102388371B1 - Semiconductor device package - Google Patents

Abstract

A semiconductor device package according to the present invention includes a reflective member including a cavity; a semiconductor device disposed in the cavity; a light-transmitting member disposed between the reflective member and a side surface of the semiconductor device; and a wavelength conversion layer disposed on the upper surface of the semiconductor element and the upper surface of the light transmitting member, wherein the upper surface of the wavelength conversion layer disposed on the upper surface of the light transmitting member includes a curvature, and the lowest point of the inclined surface of the light transmitting member is the curvature It may be disposed closer to a side surface of the semiconductor device than a negative lowest point.

Through the semiconductor device package according to the present invention, it is possible to improve the light extraction efficiency of the semiconductor device.

Description

Semiconductor device package {Semiconductor device package}

The present invention relates to a semiconductor device package.

Light emitting devices such as Light Emitting Diodes and Laser Diodes using compound semiconductor materials such as Groups 3-5 or 2-6 are red, green, blue and ultraviolet rays through the development of thin film growth technology and device materials. It is possible to implement various colors, such as fluorescent materials or by adjusting the color, so that white light with good efficiency can be realized. It has the advantage of environmental friendliness.

Therefore, the semiconductor device is a communication module of optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting the backlight of a liquid crystal display (LCD) display device, a fluorescent lamp or an incandescent light bulb. The application of white light emitting diode lighting devices, automobile headlights and traffic lights, sensors that detect gas or fire, and medical devices is expanding. Various developments are being made on the structure of

An object of the present invention is to provide a semiconductor device package with improved luminous flux.

A semiconductor device package according to the present invention includes a reflective member including a cavity; a semiconductor device disposed in the cavity; a light-transmitting member disposed between the reflective member and a side surface of the semiconductor device; and a wavelength conversion layer disposed on the upper surface of the semiconductor device and the upper surface of the light transmitting member, wherein an upper surface of the wavelength conversion layer disposed on the upper surface of the light transmitting member includes a curvature, and the lowest point of the inclined surface of the light transmitting member is the curvature It may be disposed closer to a side surface of the semiconductor device than a negative lowest point.

In addition, the upper surface of the light transmitting member may have a curvature corresponding to the curvature of the upper surface of the wavelength conversion layer.

In addition, a lower surface of the wavelength conversion layer disposed on the upper surface of the light transmitting member may have a curvature corresponding to the curvature of the upper surface of the light transmitting member.

In addition, the upper surface of the wavelength conversion layer may include a first region disposed on the semiconductor device and a second region disposed on the light-transmitting member, and the width of the second region may be greater than 0 mm to 4 mm or less.

In addition, the second region may include a radius of curvature that is a radius of a circle approximate to the curve of the curvature, and the radius of curvature may be 0.5 to 1.75 or less compared to a horizontal width of the second region.

In addition, the curvature included in the upper surface of the light transmitting member may have a concave or convex curvature with respect to the support member.

In addition, the curvature portion included in the wavelength conversion layer may have a curvature in the same direction and the same size as the curvature portion included in the upper surface of the light transmitting member.

In addition, the reflective member may include an inclined surface between the upper surface and the bottom surface and a step portion between the upper surface and the inclined surface, and the thickness of the step portion may be 0.2 to 5.0 or less compared to the thickness of the wavelength conversion layer.

In addition, the inclined surface of the reflective member may have an angle of 40 degrees or more to 50 degrees or less.

In addition, the semiconductor device is disposed on a support member, and the support member includes a region in contact with the semiconductor device and the reflective member, a region in contact with the semiconductor device and the support member and a region in contact between the support member and the reflective member The distance between them may be 0 mm or more and 1 mm or less.

Through the semiconductor device package according to the present invention, it is possible to improve the light extraction efficiency of the semiconductor device.

In addition, the luminous flux of the semiconductor device may be improved through the present invention.

1 illustrates a top surface of a semiconductor device package according to a first embodiment.
FIG. 2 is a cross-sectional view of the semiconductor device package according to the first embodiment cut in the direction A-A' in FIG. 1 .
3 illustrates a first region and a second region including the wavelength conversion layer of the semiconductor device package according to the first embodiment.
4 illustrates a semiconductor device package according to the first embodiment including different radii of curvature.
5 is an x-ray photograph of the semiconductor device package according to the first embodiment.
6 is a view showing a top surface of a semiconductor device according to a second embodiment.
7 is a cross-sectional view of the semiconductor device package according to the second embodiment cut in the direction II' in FIG. 4 .
8 is an exploded perspective view of a light source device according to an embodiment.

The above-described object and technical configuration of the present invention and details regarding the operational effects thereof will be more clearly understood by the following detailed description. In the description of the present invention, each layer (film), region, pattern or structure is “on” or “under/under” the substrate, each layer (film), region, pattern or patterns. The description of being formed on ” includes all those formed directly or through another layer. The standards for the upper/above or lower/lower layers of each layer will be described with reference to the drawings.

The present embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below.

Even if a matter described in a specific embodiment is not described in another embodiment, it may be understood as a description related to another embodiment unless a description contradicts or contradicts the matter in the other embodiment.

For example, if a feature is described for configuration A in one embodiment and a feature for configuration B is described in another embodiment, the opposite or contradictory description is provided even if the embodiment in which configuration A and configuration B are combined is not explicitly described. Unless otherwise indicated, it should be understood as belonging to the scope of the present invention.

Terms such as first, second, etc. used below are merely identification symbols for distinguishing the same or corresponding components, and the same or corresponding components are not limited by terms such as first and second.

The singular expression includes the plural expression unless the context clearly dictates otherwise. Terms such as “comprising” or “having” are features and numbers described in the specification. It is to be construed that one or more other features or numbers, steps, operations, components, parts, or combinations thereof may be added to indicate that there is a step, action, component, part, or combination thereof. can

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a top view of a semiconductor device package 100 according to a first embodiment, and FIG. 2 is a cross-sectional view of the semiconductor device package according to the first embodiment taken in the direction A-A' of FIG. 1 . did it

As shown in FIG. 2 , the semiconductor device package according to the first embodiment includes a support member 10 , a semiconductor device 20 , a light transmitting member 40 , a reflective member 30 and a wavelength conversion layer 50 . can

The support member 10 may be a metal or a carrier substrate. For example, the support member 10 is a semiconductor substrate (eg, Si, Ge, GaN, GaAS, Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or impurity implanted) ZnO, SiC, SiGe, etc.) may be formed of at least one of.

The semiconductor device 20 may be disposed on the support member 10 .

The semiconductor device 20 may include various electronic devices such as a light emitting device and a light receiving device, and the light emitting device may be a UV light emitting device or a blue light emitting device.

The light emitting device emits light by recombination of electrons and holes, and the wavelength of this light is determined by an energy band gap inherent in a material, and may emit light within a wavelength range from an ultraviolet band to a visible ray band.

The semiconductor device may be a flip chip semiconductor.

The reflective member 30 reflects the side light of the semiconductor device 20 , and the reflected light may be introduced into the semiconductor device 20 again or may be emitted to one surface of the wavelength conversion layer 50 .

The reflective member 30 may include at least one of an epoxy resin, a polyimide resin, a urea resin, and an acrylic resin, but is not limited thereto.

The reflective member 30 may include a reflective material, for example, the reflective material may be TiO2 or SiO2.

The reflective member 30 may include a cavity, and the semiconductor device 20 may be disposed in the cavity.

The reflective member 30 may include a first side close to the side of the semiconductor device 20 and a second side facing the first side. The first side or the second side may have an inclined surface with respect to the upper surface of the support member 10 , and the light-transmitting member 40 may be disposed between the first side and the side surface of the semiconductor device 20 . and may include an inclined surface S corresponding to the inclined surface S of the first side.

The light emitted from the side of the semiconductor device 20 is reflected through the inclined surface S of the first side included in the reflective member 30, so that light extraction efficiency may be increased.

)는 상기 지지부재(10)의 상면에 대하여 40도 이상 내지 50도 이하의 각도를 가질 수 있다.The angle of the inclined surface of the first side (

) may have an angle of 40 degrees or more to 50 degrees or less with respect to the upper surface of the support member 10 .

)가 상기 지지부재(10) 상면에 대하여 각도가 40도 이상일 때, 상기 반도체소자(20)의 측면에서 방출되는 광이 제1측면의 경사면에서 발생하는 광의 굴절로 인해 투광부재(40)내에서 확산되고, 상기 확산된 광이 파장변환층(50)으로 입사되어, 상기 반도체소자패키지(100)의 광 출력면적에서 광 세기의 균일도를 향상시킬 수 있다.The angle of the slope (

) when the angle with respect to the upper surface of the support member 10 is 40 degrees or more, the light emitted from the side of the semiconductor device 20 is refracted in the light transmitting member 40 due to the refraction of light generated on the inclined surface of the first side. The diffused light is incident on the wavelength conversion layer 50 to improve the uniformity of light intensity in the light output area of the semiconductor device package 100 .

)에 의존할 수 있다. 따라서 광 경로를 단축하여 광이 흡수될 수 있는 확률을 낮추고, 상기 광 세기의 균일도를 확보하기 위해서 상기 경사면의 각도(

)는 상기 지지부재(10) 상면에 대하여 각도가 50도 이하일 수 있다.The light emitted to the side of the semiconductor device 20 may be reflected by the reflective member 30 and emitted to the upper surface of the semiconductor device package 100 . At this time, the reflective member 30 and the semiconductor device package The light path between the upper planes is the angle of the inclined plane (

) can depend on Therefore, in order to reduce the probability of light absorption by shortening the light path, and to ensure the uniformity of the light intensity, the angle (

) may have an angle of 50 degrees or less with respect to the upper surface of the support member 10 .

The reflective member 30 may include a step portion 60 between the upper surface and the inclined surface S, and the step portion 60 is disposed at the edge of the wavelength conversion layer 50 to convert the wavelength The layer 50 may be firmly fixed.

The thickness (d) of the step portion may have a thickness of 0.2 to 5.0 or more of the thickness (I) of the wavelength conversion layer.

When the thickness d of the step portion is 0.2 or more, the wavelength conversion layer 50 can be firmly fixed, and reliability of the semiconductor device package can be secured.

In addition, in order to secure the reliability of the semiconductor device package, as well as the process yield of the semiconductor device package, and reduce the cost of the semiconductor device package, the thickness d of the step portion may be 5.0 or less.

The thickness H of the reflective member may be a thickness corresponding to the sum of the thickness of the semiconductor device 20 and the thickness d of the step portion 60 .

The thickness of the reflective member 40 may be adjusted according to the thickness of the semiconductor device 20 and the height d of the step 60 .

The thickness of the reflective member 30 may be 80 μm or more and 350 μm or less.

When the thickness of the reflective member 30 is 80 μm or more, light emitted from the side of the semiconductor device 20 is sufficiently reflected by the wavelength conversion layer 50 to secure light extraction efficiency. In addition to light extraction efficiency, the thickness of the reflective member 40 may be 350 μm or less in order to secure a process margin of the semiconductor device package.

를 조절할 수 있어 상기 반도체 소자 패키지의 광도를 향상시키고, 지향각을 자유롭게 제어할 수 있다.In addition, when the thickness of the reflective member 30 is 80 μm or more to 350 μm or less, the angle (

can be adjusted to improve the luminance of the semiconductor device package and to freely control the orientation angle.

The light transmitting member 40 may be disposed between the inclined surface of the reflective member 30 and the side surface of the semiconductor device 20 .

The light transmitting member 40 may be disposed on four side surfaces of the semiconductor device 20 , and disposed between the reflective member 30 and the semiconductor device 20 to surround the semiconductor device 20 . can be

The light-transmitting member 40 may have a refractive index different from that of the semiconductor device 20 , and the refractive index of the light-transmitting member 40 may have a refractive index equal to or less than that of the semiconductor device 20 .

Therefore, it is possible to improve the extraction efficiency of the light emitted to the outside from the semiconductor device package.

The light transmitting member 40 may include at least one of an epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin, but is not limited thereto.

The upper surface of the light transmitting member 40 may include a curvature, and the curvature may include a concave curvature with respect to the upper surface of the support member 10 , but is not limited thereto.

The curvature of the curvature of the light transmitting member 40 and the curvature of the wavelength conversion layer 50 may have the same curvature size and the same curvature direction.

The light transmitting member 40 may include an inclined surface (S) corresponding to the inclined surface (S) of the first side of the reflective member (30). The inclined surface of the light transmitting member and the inclined surface of the reflective member may refer to the same thing, and the lowest point a of the inclined surface of the light transmitting member may be the same as the lowest point of the inclined surface of the reflecting member.

The lowest point (a) of the inclined surface of the light transmitting member 40 is closer to the side of the semiconductor device 20 as compared to the lowest point (b) of the curvature, the light emitted from the side of the semiconductor device 20 is reflected by the reflection member 30 Since the light path reflected from the is shortened, the path that may cause light loss may be shortened. Therefore, more light can be reflected to one surface of the semiconductor device 20, so that light extraction characteristics can be secured, and the lowest point (a) of the inclined surface of the light-transmitting member is the lowest point (b) of the curvature portion in contrast to the semiconductor device 20 ), it is possible to secure a process margin for arranging the light-transmitting member 40 as the distance increases in the opposite direction.

In addition, as the lowest point (a) of the inclined surface of the light-transmitting member 40 is closer to the side of the semiconductor device 20 as compared to the lowest point (b) of the curvature, light extraction characteristics are secured and at the same time, the light-transmitting member 40 of the inclined surface It is possible to secure the uniformity of the light intensity according to the angle, and as the lowest point (a) of the inclined surface of the light transmitting member 40 is farther away from the semiconductor device 20 in the opposite direction compared to the lowest point (b) of the curvature part, the light transmitting member It is possible to secure the process margin for arranging the 40 , and at the same time secure the uniformity of the light intensity according to the angle of the inclined surface of the light transmitting member 40 .

On the other hand, the support member 10 includes a region in contact with the semiconductor device and the reflective member 30 , a region in which the semiconductor device and the support member 10 are in contact, and the support member 10 and the reflective member 30 . The separation distance l between the regions in contact with ) may be 0 mm or more and 1 mm or less.

When the separation distance l is 0 mm or more, the amount of light incident to the light-transmitting member 40 of the side light of the semiconductor device 20 increases, thereby securing the optical characteristics of the semiconductor device 20 .

In addition, in order to secure the yield of the process of disposing the light-transmitting member 40 as well as the optical characteristics of the semiconductor device 20 , the separation distance l may be 1 mm or less.

Not only this, the lowest point (a) of the inclined surface of the light transmitting member through the separation distance (l) between the region in which the semiconductor device and the support member 10 are in contact and the region in which the support member 10 and the reflective member 30 are in contact may be disposed in the direction or opposite direction of the semiconductor device in contrast to the lowest point (b) of the curvature, and accordingly, not only the effect through the separation distance (l), but also the light extraction characteristics of the semiconductor device package and the margin of the light transmitting member arrangement process can be obtained

The wavelength conversion layer 50 is disposed on the upper surface of the semiconductor device 20 and the upper surface of the light-transmitting member 40 , and may include a wavelength conversion material.

The wavelength conversion layer 50 may convert the wavelength of light emitted from the wavelength conversion layer 50 to the outside when the light incident to the wavelength conversion layer 50 from the semiconductor device 20 is emitted to the outside. .

The wavelength conversion layer 50 may be made of a polymer resin containing a wavelength conversion material.

The polymer resin may include, but is not limited to, at least one of a permeable epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin.

The wavelength conversion material may be a phosphor. The wavelength conversion material may include at least one of a sulfide-based compound, an oxide-based compound, or a nitride-based compound, but is not limited thereto. The phosphor may be variously selected to realize a color desired by a user.

For example, when the semiconductor device 20 emits light in an ultraviolet wavelength band, a green phosphor, a blue phosphor, and a red phosphor may be selected as the phosphor. When the semiconductor device 20 emits light in a blue wavelength band, a yellow phosphor or a combination of a red phosphor and a green phosphor or a combination of a yellow phosphor, a red phosphor, and a green phosphor may be selected as the phosphor.

The thickness I of the wavelength conversion layer 50 may be 30 μm or more and 200 μm or less.

When the thickness (I) of the wavelength conversion layer 50 is 30um or more, when the light incident on the wavelength conversion layer 50 is emitted to the outside, the wavelength of the incident light can be converted, so that the light conversion rate can be secured there is.

In addition, when the thickness (I) of the wavelength conversion layer 50 is 200 μm or less, it is possible to secure the processing time of the semiconductor device package as well as the light conversion rate.

As shown in FIG. 3 , the wavelength conversion layer 50 may include a first region 50b disposed on the upper surface of the semiconductor and a second region 50a having a curvature portion disposed thereon.

The direction of curvature of the second region 50a may be concave or convex with respect to the support member 10, but is not limited thereto.

The second region 50a may be disposed on the upper surface of the light-transmitting member 40 , and the direction of curvature of the second region 50a may be concave or convex with respect to the support member 10 , and the light-transmitting member 40 . ) The curvature direction and the curvature size of the curvature part included in the upper surface may be the same.

The second region 50a is described as an example of a curved portion concave with respect to the support member 10 , but is not limited thereto.

The horizontal width W of the second region 50a may be greater than 0 mm and less than or equal to 4 mm.

When the horizontal width W of the second region is greater than 0 mm, the second region 50a may include a curvature, and the luminous flux characteristic of the semiconductor device package may be improved.

In addition, when the width W in the horizontal direction of the second region is 4 mm or less, it is possible to secure the process yield of the semiconductor device package as well as the luminous flux characteristics of the semiconductor device package.

In an equally spaced region 30 - 2 where the edge of the semiconductor device and the edge of the light transmitting member 40 overlap between the edge of the semiconductor device 20 and the edge of the reflective member facing the edge of the semiconductor device, The width W in the horizontal direction may be uniform. In addition, the outer portion of the semiconductor element 20 where one corner of the semiconductor element 20 meets the other corner, one corner and the other corner of the light transmitting member 40 facing the outer portion of the semiconductor element 20 . The width W in the horizontal direction may be non-uniformly disposed in the unevenly spaced regions 30 - 1 between the outer portions of the light transmitting members 40 that meet. For example, when the semiconductor device 20 has a rectangular shape and the light-transmitting member 40 is disposed to surround the semiconductor device 20 , a point where the edges of the semiconductor device 20 meet and the The distance between the corners of the light transmitting member 40 may be greater than the horizontal width W of the second region. Accordingly, it may be easy to control the orientation angle of the semiconductor device package.

Referring to FIG. 4 , the second region 50a includes a curvature, which is a value indicating the degree of curvature, and a radius of curvature r, which is inversely related to the curvature. In other words, the radius of the circle closest to the curve is called the radius of curvature (r). The radius of curvature r is the first region 50b and the second region when the horizontal width W of the second region in the horizontal direction parallel to the edge of the semiconductor device package is defined within the above range. The horizontal edge of the upper surface of the first area 50b in contact with the second area 50b, the corner of the upper surface of the reflective member 30 in contact with the second area 50b, and the flat upper surface of the first area 50b It may be the radius of a circle realized by connecting points on the upper surface of the second region 50b having the longest distance in the direction of the semiconductor device 20 from the support member 10 that is perpendicular to the direction.

Fig. 4 (a) shows a cross section of the semiconductor device package according to the first embodiment including a small curvature, and Fig. 4 (b) shows a cross section of the semiconductor device package according to the first embodiment having a large curvature. did it

4(a) and 4(b), the larger the curvature of the second region 50a, the smaller the size of a circle approximating the curve, so the radius of curvature r decreases, and the second region 50a The smaller the curvature of , the larger the size of a circle that approximates the curve, so the radius of curvature (r) increases.

The radius of curvature r according to the present invention may be 0.5 or more to 1.75 or less with respect to the horizontal width W of the second region 50a.

(r/W) Relative luminous flux (%) 0.40 102.7% 0.50 102.5% 1.20 101.2% 1.75 101.1% 1.80 100.2%

Table 1 shows the relative luminous flux according to the radius of curvature (r) compared to the horizontal width (W) of the second region based on 100% of the relative luminous flux of the semiconductor device package not including the curvature.

Referring to Table 1, when the radius of curvature (r) relative to the horizontal width (W) of the second region is 0.5 or less, the curvature has an inverse relationship with the radius of curvature (r), so as the radius of curvature (r) decreases, Although the curvature is increased to improve the relative luminous flux, the curvature portion of the wavelength conversion layer 50 and the inclined surface S of the reflective member 30 may contact each other. In order to prevent this, the radius of curvature (r) relative to the horizontal width (W) of the second region should be 0.5 or more, thereby securing the light extraction characteristics as well as the luminous flux characteristics of the semiconductor device package.

In addition, when the radius of curvature r relative to the width W in the horizontal direction of the second region 50a is 1.75 or less, the curvature increases as the radius of curvature r decreases, and the wavelength conversion layer 50 area is wide. Therefore, the relative luminous flux of the semiconductor device package is improved, and luminous flux characteristics can be secured.

5 is an x-ray photograph of the semiconductor device package according to the first embodiment, and it can be seen that the configuration described above with reference to FIG. 2 is clearly distinguished even on an x-ray image.

It is a state in which a molding member is applied on a semiconductor device package according to an embodiment, and when applied to a product, it is applied in the form shown in FIG. 5 , but is not limited thereto.

In particular, the curvature included in the wavelength conversion layer 50 can be visually confirmed.

6 is a top view of the semiconductor device package according to the second embodiment, and FIG. 7 is a cross-sectional view of the semiconductor device package according to the second embodiment taken along the line I-I' of FIG. 6 .

As shown in FIG. 7 , the semiconductor device package according to the second embodiment shows a semiconductor device package in which a wavelength conversion layer 50 including a region having a convex curvature with respect to the support member 10 is disposed.

The semiconductor device package according to the second embodiment may include a support member 10 , a semiconductor device 20 , a light-transmitting member 40 , a reflective member 30 and a wavelength conversion layer 50 , and the first embodiment A detailed description of the semiconductor device package and corresponding components will be omitted.

The wavelength conversion layer 50 may include a second region 50b having a convex curvature with respect to the support member 10 .

The semiconductor device package according to the second embodiment can obtain the same effect as the semiconductor device package according to the first embodiment.

Accordingly, the direction of the curvature of the second region 50b may be concave or convex with respect to the support member 10 according to the designer's intention.

Meanwhile, a plurality of semiconductor device packages according to the above-described embodiments may be arranged on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, etc. may be disposed on a light path of the semiconductor device package.

In addition, it may be implemented as a light source device including a semiconductor device package according to an embodiment.

In addition, the light source device includes a light source module including a substrate and a semiconductor device package according to an embodiment, a heat sink for dissipating heat of the light source module, and a power supply unit that processes or converts an electrical signal provided from the outside and provides the light source module may include For example, the light source device may include a lamp, a head lamp, or a street lamp. In addition, the light source device according to the embodiment may be variously applied to products requiring output light.

In addition, the light source device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module that emits light and includes a semiconductor element, a light guide plate disposed in front of the reflecting plate and guiding the light emitted from the light emitting module to the front; An optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, disposed in front of the display panel A color filter may be included. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

As another example of the light source device, the head lamp is a light emitting module including a semiconductor device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, and is reflected by the reflector It may include a lens that refracts light forward, and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by a designer.

Meanwhile, FIG. 8 is an exploded perspective view of a light source device according to an embodiment.

The lighting device according to the embodiment may include a cover 2100 , a light source module 2200 , a heat sink 2400 , a power supply unit 2600 , an inner case 2700 , and a socket 2800 . In addition, the lighting device according to the embodiment may further include any one or more of the member 2300 and the holder 2500 . The light source module 2200 may include a semiconductor device package according to an embodiment.

The light source module 2200 may include a light source unit 2210 , a connection plate 2230 , and a connector 2250 . The member 2300 is disposed on the upper surface of the heat sink 2400 , and has guide grooves 2310 into which a plurality of light source units 2210 and a connector 2250 are inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating part 2710 of the inner case 2700 . Accordingly, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510 .

The power supply unit 2600 may include a protrusion part 2610 , a guide part 2630 , a base 2650 , and an extension part 2670 . The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is hardened, and allows the power supply unit 2600 to be fixed inside the inner case 2700 .

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by a person skilled in the art to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiment.

In the above, the embodiment has been mainly described, but this is only an example and not a limitation on the embodiment, and those of ordinary skill in the art to which the embodiment belongs may find several not illustrated above within the range that does not deviate from the essential characteristics of the embodiment. It can be seen that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

10: support member
20: semiconductor device
30: reflective member
40: light transmitting member
50: wavelength conversion layer

Claims (10)

a reflective member including a cavity;
a semiconductor device disposed in the cavity;
a light-transmitting member disposed between the reflective member and a side surface of the semiconductor device; and
and a wavelength conversion layer disposed on the upper surface of the semiconductor element and the upper surface of the light-transmitting member;
The upper surface of the wavelength conversion layer disposed on the upper surface of the light transmitting member includes a curvature,
The lowest point of the inclined surface of the light transmitting member is disposed closer to the side of the semiconductor device than the lowest point of the curvature. According to claim 1,
The upper surface of the light-transmitting member has a curvature corresponding to the curvature of the upper surface of the wavelength conversion layer.
delete According to claim 1,
The upper surface of the wavelength conversion layer includes a first region disposed on the semiconductor device and a second region disposed on the light-transmitting member,
The width of the second region is greater than 0 mm and less than or equal to 4 mm of the semiconductor device package.
5. The method of claim 4,
The second region includes a radius of curvature that is the radius of a circle approximate to the curve of the curvature,
The radius of curvature is 0.5 or more to 1.75 or less with respect to the horizontal width of the second region.
delete delete According to claim 1,
The reflective member includes an inclined surface between the upper surface and the lower surface, and a step portion between the upper surface and the inclined surface, and the thickness of the step portion is 0.2 to 5.0 or less compared to the thickness of the wavelength conversion layer.
According to claim 1,
The inclined surface of the reflective member is a semiconductor device package having an angle of 40 degrees or more to 50 degrees or less.
delete

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