KR102383190B1 - 고체 촬상 장치 및 그 제조 방법 및 전자 기기 - Google Patents

고체 촬상 장치 및 그 제조 방법 및 전자 기기 Download PDF

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KR102383190B1
KR102383190B1 KR1020217010404A KR20217010404A KR102383190B1 KR 102383190 B1 KR102383190 B1 KR 102383190B1 KR 1020217010404 A KR1020217010404 A KR 1020217010404A KR 20217010404 A KR20217010404 A KR 20217010404A KR 102383190 B1 KR102383190 B1 KR 102383190B1
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pixel
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phase difference
light
microlens
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KR20210043002A (ko
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토모히코 아사츠마
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소니그룹주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H01L27/14623—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H01L27/14603—
    • H01L27/14621—
    • H01L27/14627—
    • H01L27/1464—
    • H01L27/14685—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
KR1020217010404A 2013-07-03 2014-06-25 고체 촬상 장치 및 그 제조 방법 및 전자 기기 Active KR102383190B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013139832A JP6103301B2 (ja) 2013-07-03 2013-07-03 固体撮像装置およびその製造方法、並びに電子機器
JPJP-P-2013-139832 2013-07-03
KR1020157025832A KR20160029727A (ko) 2013-07-03 2014-06-25 고체 촬상 장치 및 그 제조 방법, 밀 전자 기기
PCT/JP2014/003401 WO2015001769A2 (en) 2013-07-03 2014-06-25 Solid-state image-capturing device and production method thereof, and electronic appliance

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KR1020157025832A Division KR20160029727A (ko) 2013-07-03 2014-06-25 고체 촬상 장치 및 그 제조 방법, 밀 전자 기기

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KR20210043002A KR20210043002A (ko) 2021-04-20
KR102383190B1 true KR102383190B1 (ko) 2022-04-08

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KR1020157025832A Ceased KR20160029727A (ko) 2013-07-03 2014-06-25 고체 촬상 장치 및 그 제조 방법, 밀 전자 기기

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US (4) US9978786B2 (enExample)
JP (1) JP6103301B2 (enExample)
KR (2) KR102383190B1 (enExample)
CN (2) CN109728014B (enExample)
TW (1) TWI654750B (enExample)
WO (1) WO2015001769A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6103301B2 (ja) 2013-07-03 2017-03-29 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6115787B2 (ja) * 2013-12-18 2017-04-19 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
KR20160123757A (ko) * 2015-04-17 2016-10-26 삼성전자주식회사 이미지 촬영 장치 및 이미지 촬영 방법
KR102537009B1 (ko) 2015-06-03 2023-05-26 소니그룹주식회사 고체 촬상 소자, 촬상 장치, 및, 고체 촬상 소자의 제조 방법
JP6566734B2 (ja) * 2015-06-11 2019-08-28 キヤノン株式会社 固体撮像素子
JP6758747B2 (ja) 2015-09-18 2020-09-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US9905605B2 (en) * 2015-10-15 2018-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Phase detection autofocus techniques
US9832399B2 (en) * 2016-01-29 2017-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor and method for manufacturing the same
JP2017195342A (ja) * 2016-04-22 2017-10-26 株式会社ニコン 撮像素子および電子機器
CN109479101B (zh) * 2016-07-13 2021-08-03 索尼公司 成像装置、成像器件和图像处理装置
JP6895724B2 (ja) * 2016-09-06 2021-06-30 キヤノン株式会社 撮像素子及び撮像装置
KR101892184B1 (ko) * 2017-02-14 2018-08-29 크루셜텍(주) 다중 생체 인식 장치 및 이를 포함하는 출입 시스템
CN108804985A (zh) * 2017-05-03 2018-11-13 上海箩箕技术有限公司 指纹成像模组和电子设备
KR102375989B1 (ko) 2017-08-10 2022-03-18 삼성전자주식회사 화소 사이의 신호 차이를 보상하는 이미지 센서
WO2019065143A1 (ja) * 2017-09-26 2019-04-04 富士フイルム株式会社 積層体、及び、固体撮像素子
CN111201771B (zh) * 2017-10-19 2022-08-30 索尼公司 电子仪器
WO2019078334A1 (ja) * 2017-10-19 2019-04-25 ソニー株式会社 撮像素子、画像処理装置、画像処理方法、および、プログラム
JP7383876B2 (ja) * 2018-02-02 2023-11-21 株式会社ニコン 撮像素子、及び、撮像装置
KR102507207B1 (ko) * 2018-04-11 2023-03-09 에스케이하이닉스 주식회사 낮은 굴절률을 갖는 패싱 필터를 포함하는 이미지 센서
CN110739321B (zh) 2018-07-18 2025-06-17 索尼半导体解决方案公司 受光元件以及测距模块
KR102593949B1 (ko) * 2018-07-25 2023-10-27 삼성전자주식회사 이미지 센서
KR102638740B1 (ko) 2018-12-12 2024-02-22 삼성전자주식회사 3차원 반도체 메모리 소자
WO2020195825A1 (ja) * 2019-03-25 2020-10-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
KR102730016B1 (ko) * 2019-09-06 2024-11-14 에스케이하이닉스 주식회사 이미지 센싱 장치
TWI792016B (zh) * 2019-12-11 2023-02-11 神盾股份有限公司 指紋感測系統及其使用方法
JP7503399B2 (ja) * 2020-03-16 2024-06-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
JP2021175048A (ja) * 2020-04-22 2021-11-01 ソニーセミコンダクタソリューションズ株式会社 電子機器
US11276793B2 (en) * 2020-06-04 2022-03-15 Visera Technologies Company Limited Semiconductor device
CN116134619A (zh) * 2020-07-30 2023-05-16 松下知识产权经营株式会社 光检测器、固体摄像元件、以及光检测器的制造方法
US11495048B2 (en) 2020-08-17 2022-11-08 Au Optronics Corporation Fingerprint sensing module
KR20220128698A (ko) 2021-03-15 2022-09-22 에스케이하이닉스 주식회사 이미지 센싱 장치
KR20240037943A (ko) * 2021-08-06 2024-03-22 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치
CN114040083A (zh) * 2021-11-30 2022-02-11 维沃移动通信有限公司 图像传感器、摄像模组以及电子设备
JP2023150251A (ja) * 2022-03-31 2023-10-16 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
US20250126914A1 (en) * 2023-10-16 2025-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors and methods of manufacturing them

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176715A (ja) * 2010-02-25 2011-09-08 Nikon Corp 裏面照射型撮像素子および撮像装置
US20120147208A1 (en) 2010-12-09 2012-06-14 Sony Corporation Solid-state imaging device, manufacturing method thereof, and electronic apparatus
US20130021508A1 (en) * 2010-06-18 2013-01-24 Fujifilm Corporation Solid state imaging device and digital camera
JP2013021168A (ja) * 2011-07-12 2013-01-31 Sony Corp 固体撮像装置、固体撮像装置の製造方法、電子機器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4968893B2 (ja) 2006-09-14 2012-07-04 キヤノン株式会社 撮像素子及び撮像システム
JP5076679B2 (ja) * 2007-06-28 2012-11-21 ソニー株式会社 固体撮像装置及びカメラモジュール
JP2009059824A (ja) * 2007-08-30 2009-03-19 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
JP2010093081A (ja) * 2008-10-08 2010-04-22 Panasonic Corp 固体撮像装置およびその製造方法
KR101583263B1 (ko) * 2009-04-27 2016-01-11 삼성디스플레이 주식회사 표시기판, 이의 제조방법 및 이를 갖는 표시장치
JP2011100900A (ja) * 2009-11-06 2011-05-19 Sony Corp 固体撮像装置及びその製造方法と設計方法並びに電子機器
JP2011210981A (ja) * 2010-03-30 2011-10-20 Sony Corp 固体撮像装置、固体撮像装置の製造方法、電子機器
JP2010258466A (ja) * 2010-06-23 2010-11-11 Panasonic Corp 固体撮像装置およびその製造方法
JP5956718B2 (ja) 2011-01-20 2016-07-27 キヤノン株式会社 撮像素子及び撮像装置
JP5664270B2 (ja) * 2011-01-21 2015-02-04 ソニー株式会社 撮像素子および撮像装置
JP5861257B2 (ja) 2011-02-21 2016-02-16 ソニー株式会社 撮像素子および撮像装置
KR101853817B1 (ko) * 2011-07-20 2018-05-02 삼성전자주식회사 촬상 소자
JP5902468B2 (ja) * 2011-12-21 2016-04-13 株式会社ネクスコ東日本エンジニアリング 埋設ジョイント構造の施工方法および埋設ジョイント構造ならびに埋設ジョイント施工金具組立体
JP6095268B2 (ja) * 2012-02-24 2017-03-15 キヤノン株式会社 固体撮像装置、及び撮像システム
JP6148530B2 (ja) * 2013-05-02 2017-06-14 キヤノン株式会社 固体撮像装置及びカメラ
JP2015005619A (ja) * 2013-06-20 2015-01-08 キヤノン株式会社 固体撮像装置、その製造方法、およびカメラ
JP6103301B2 (ja) * 2013-07-03 2017-03-29 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176715A (ja) * 2010-02-25 2011-09-08 Nikon Corp 裏面照射型撮像素子および撮像装置
US20130021508A1 (en) * 2010-06-18 2013-01-24 Fujifilm Corporation Solid state imaging device and digital camera
US20120147208A1 (en) 2010-12-09 2012-06-14 Sony Corporation Solid-state imaging device, manufacturing method thereof, and electronic apparatus
JP2013021168A (ja) * 2011-07-12 2013-01-31 Sony Corp 固体撮像装置、固体撮像装置の製造方法、電子機器

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Publication number Publication date
TW201508905A (zh) 2015-03-01
JP6103301B2 (ja) 2017-03-29
JP2015015295A (ja) 2015-01-22
US9978786B2 (en) 2018-05-22
US12087787B2 (en) 2024-09-10
TWI654750B (zh) 2019-03-21
US20220102400A1 (en) 2022-03-31
KR20210043002A (ko) 2021-04-20
CN109728014B (zh) 2022-11-18
CN109728014A (zh) 2019-05-07
US20200279882A1 (en) 2020-09-03
CN105190891A (zh) 2015-12-23
WO2015001769A3 (en) 2015-03-05
CN105190891B (zh) 2019-05-10
US20160343753A1 (en) 2016-11-24
KR20160029727A (ko) 2016-03-15
US11211410B2 (en) 2021-12-28
US20180366501A1 (en) 2018-12-20
WO2015001769A2 (en) 2015-01-08
US10685998B2 (en) 2020-06-16

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