KR102382784B1 - 이산화티타늄의 원자층 증착법을 위한 오존 반응성 리간드를 가진 사이클로펜타다이에닐 티타늄 알콕사이드 - Google Patents

이산화티타늄의 원자층 증착법을 위한 오존 반응성 리간드를 가진 사이클로펜타다이에닐 티타늄 알콕사이드 Download PDF

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KR102382784B1
KR102382784B1 KR1020167019582A KR20167019582A KR102382784B1 KR 102382784 B1 KR102382784 B1 KR 102382784B1 KR 1020167019582 A KR1020167019582 A KR 1020167019582A KR 20167019582 A KR20167019582 A KR 20167019582A KR 102382784 B1 KR102382784 B1 KR 102382784B1
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precursor
alkyl
titanium
compound
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KR20160102010A (ko
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토마스 엠 카메론
윌리암 헌크스
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엔테그리스, 아이엔씨.
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C01G23/047—Titanium dioxide
    • C01G23/07—Producing by vapour phase processes, e.g. halide oxidation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020167019582A 2013-12-22 2014-12-20 이산화티타늄의 원자층 증착법을 위한 오존 반응성 리간드를 가진 사이클로펜타다이에닐 티타늄 알콕사이드 Active KR102382784B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201361919795P 2013-12-22 2013-12-22
US61/919,795 2013-12-22
US201461939211P 2014-02-12 2014-02-12
US61/939,211 2014-02-12
US201462060266P 2014-10-06 2014-10-06
US62/060,266 2014-10-06
PCT/US2014/071754 WO2015095845A1 (en) 2013-12-22 2014-12-20 Cyclopentadienyl titanium alkoxides with ozone activated ligands for ald of tio2

Publications (2)

Publication Number Publication Date
KR20160102010A KR20160102010A (ko) 2016-08-26
KR102382784B1 true KR102382784B1 (ko) 2022-04-06

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KR1020167019582A Active KR102382784B1 (ko) 2013-12-22 2014-12-20 이산화티타늄의 원자층 증착법을 위한 오존 반응성 리간드를 가진 사이클로펜타다이에닐 티타늄 알콕사이드

Country Status (5)

Country Link
US (1) US10870921B2 (enExample)
JP (1) JP6685923B2 (enExample)
KR (1) KR102382784B1 (enExample)
TW (1) TWI664185B (enExample)
WO (1) WO2015095845A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018048480A1 (en) * 2016-09-09 2018-03-15 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Group 4 transition metal-containing film forming compositions for vapor deposition of group 4 transition metal-containing films
JP6948159B2 (ja) * 2017-05-31 2021-10-13 株式会社Adeka 新規な化合物、薄膜形成用原料及び薄膜の製造方法
JP6954776B2 (ja) * 2017-06-29 2021-10-27 株式会社Adeka 薄膜形成用原料及び薄膜の製造方法
KR102645319B1 (ko) * 2017-12-26 2024-03-11 솔브레인 주식회사 박막 형성용 조성물, 이를 이용한 박막 및 그 제조방법
KR102643607B1 (ko) * 2017-12-26 2024-03-06 솔브레인 주식회사 박막 형성용 조성물, 이를 이용한 박막 및 그 제조방법
KR102235869B1 (ko) * 2018-02-07 2021-04-05 주식회사 유피케미칼 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 형성용 전구체 조성물, 및 이를 이용하는 막의 형성 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
DE4122473A1 (de) 1990-07-27 1992-01-30 Kali Chemie Ag Verfahren zur abscheidung von titan, zirkonium oder hafnium enthaltenden schichten
JPH04232272A (ja) 1990-07-27 1992-08-20 Kali Chem Ag チタン、ジルコニウム又はハフニウムを含有する層の基板上への析出方法
US5344948A (en) * 1992-02-25 1994-09-06 Iowa State University Research Foundation, Inc. Single-source molecular organic chemical vapor deposition agents and use
CN1065871C (zh) 1998-05-20 2001-05-16 中国石油化工总公司 茂金属钛化合物
US8221852B2 (en) * 2007-09-14 2012-07-17 Sigma-Aldrich Co. Llc Methods of atomic layer deposition using titanium-based precursors
US20130011579A1 (en) 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
US20140124788A1 (en) * 2012-11-06 2014-05-08 Intermolecular, Inc. Chemical Vapor Deposition System

Also Published As

Publication number Publication date
TW201524988A (zh) 2015-07-01
JP2017504657A (ja) 2017-02-09
US20160362790A1 (en) 2016-12-15
US10870921B2 (en) 2020-12-22
JP6685923B2 (ja) 2020-04-22
KR20160102010A (ko) 2016-08-26
TWI664185B (zh) 2019-07-01
WO2015095845A1 (en) 2015-06-25

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