TWI664185B - 具有用於ＴｉＯ原子層沉積的臭氧活化配位基之環戊二烯鈦醇鹽 - Google Patents

具有用於ＴｉＯ原子層沉積的臭氧活化配位基之環戊二烯鈦醇鹽 Download PDF

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Publication number
TWI664185B
TWI664185B TW103144361A TW103144361A TWI664185B TW I664185 B TWI664185 B TW I664185B TW 103144361 A TW103144361 A TW 103144361A TW 103144361 A TW103144361 A TW 103144361A TW I664185 B TWI664185 B TW I664185B
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TW
Taiwan
Prior art keywords
precursor
titanium compound
organic titanium
alkyl
titanium
Prior art date
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TW103144361A
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English (en)
Chinese (zh)
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TW201524988A (zh
Inventor
卡麥容湯瑪仕Ｍ
Thomas M. Cameron
杭克斯威廉
William Hunks
Original Assignee
美商恩特葛瑞斯股份有限公司
Entegris, Inc.
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Application filed by 美商恩特葛瑞斯股份有限公司, Entegris, Inc. filed Critical 美商恩特葛瑞斯股份有限公司
Publication of TW201524988A publication Critical patent/TW201524988A/zh
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Publication of TWI664185B publication Critical patent/TWI664185B/zh

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C01G23/047—Titanium dioxide
    • C01G23/07—Producing by vapour phase processes, e.g. halide oxidation
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H10P14/6334—
    • H10P14/6681—
    • H10P14/69394—

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
TW103144361A 2013-12-22 2014-12-18 具有用於ＴｉＯ原子層沉積的臭氧活化配位基之環戊二烯鈦醇鹽 TWI664185B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361919795P 2013-12-22 2013-12-22
US61/919,795 2013-12-22
US201461939211P 2014-02-12 2014-02-12
US61/939,211 2014-02-12
US201462060266P 2014-10-06 2014-10-06
US62/060,266 2014-10-06

Publications (2)

Publication Number Publication Date
TW201524988A TW201524988A (zh) 2015-07-01
TWI664185B true TWI664185B (zh) 2019-07-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW103144361A TWI664185B (zh) 2013-12-22 2014-12-18 具有用於ＴｉＯ原子層沉積的臭氧活化配位基之環戊二烯鈦醇鹽

Country Status (5)

Country Link
US (1) US10870921B2 (enExample)
JP (1) JP6685923B2 (enExample)
KR (1) KR102382784B1 (enExample)
TW (1) TWI664185B (enExample)
WO (1) WO2015095845A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018048480A1 (en) * 2016-09-09 2018-03-15 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Group 4 transition metal-containing film forming compositions for vapor deposition of group 4 transition metal-containing films
JP6948159B2 (ja) * 2017-05-31 2021-10-13 株式会社Adeka 新規な化合物、薄膜形成用原料及び薄膜の製造方法
JP6954776B2 (ja) * 2017-06-29 2021-10-27 株式会社Adeka 薄膜形成用原料及び薄膜の製造方法
KR102645319B1 (ko) * 2017-12-26 2024-03-11 솔브레인 주식회사 박막 형성용 조성물, 이를 이용한 박막 및 그 제조방법
KR102643607B1 (ko) * 2017-12-26 2024-03-06 솔브레인 주식회사 박막 형성용 조성물, 이를 이용한 박막 및 그 제조방법
CN111683953B (zh) * 2018-02-07 2024-01-23 Up化学株式会社 含第ⅳ族金属元素化合物、其制备方法、含其的膜形成用前体组合物及用其的膜形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
JPH04232272A (ja) 1990-07-27 1992-08-20 Kali Chem Ag チタン、ジルコニウム又はハフニウムを含有する層の基板上への析出方法
DE4122473A1 (de) 1990-07-27 1992-01-30 Kali Chemie Ag Verfahren zur abscheidung von titan, zirkonium oder hafnium enthaltenden schichten
US5344948A (en) 1992-02-25 1994-09-06 Iowa State University Research Foundation, Inc. Single-source molecular organic chemical vapor deposition agents and use
CN1065871C (zh) 1998-05-20 2001-05-16 中国石油化工总公司 茂金属钛化合物
EP2201149B1 (en) * 2007-09-14 2013-03-13 Sigma-Aldrich Co. Methods of preparing titanium containing thin films by atomic layer deposition using monocyclopentadienyl titanium-based precursors
US20130011579A1 (en) * 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
US20140124788A1 (en) * 2012-11-06 2014-05-08 Intermolecular, Inc. Chemical Vapor Deposition System

Also Published As

Publication number Publication date
US20160362790A1 (en) 2016-12-15
US10870921B2 (en) 2020-12-22
KR102382784B1 (ko) 2022-04-06
JP2017504657A (ja) 2017-02-09
TW201524988A (zh) 2015-07-01
WO2015095845A1 (en) 2015-06-25
JP6685923B2 (ja) 2020-04-22
KR20160102010A (ko) 2016-08-26

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