KR102341792B1 - 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 Download PDF

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KR102341792B1
KR102341792B1 KR1020197003050A KR20197003050A KR102341792B1 KR 102341792 B1 KR102341792 B1 KR 102341792B1 KR 1020197003050 A KR1020197003050 A KR 1020197003050A KR 20197003050 A KR20197003050 A KR 20197003050A KR 102341792 B1 KR102341792 B1 KR 102341792B1
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layer
phase shift
low
thickness
film
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KR20190041461A (ko
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히로유키 이와시타
아츠시 마츠모토
오사무 노자와
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020197003050A 2016-08-26 2017-08-02 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 Active KR102341792B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-165518 2016-08-26
JP2016165518 2016-08-26
PCT/JP2017/028045 WO2018037864A1 (ja) 2016-08-26 2017-08-02 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20190041461A KR20190041461A (ko) 2019-04-22
KR102341792B1 true KR102341792B1 (ko) 2021-12-21

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Country Status (7)

Country Link
US (1) US10942440B2 (https=)
JP (2) JP6328863B1 (https=)
KR (1) KR102341792B1 (https=)
CN (1) CN109643056B (https=)
SG (1) SG11201901301SA (https=)
TW (1) TWI760353B (https=)
WO (1) WO2018037864A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102653352B1 (ko) * 2017-06-21 2024-04-02 호야 가부시키가이샤 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법
JP6557381B1 (ja) * 2018-05-08 2019-08-07 エスアンドエス テック カンパニー リミテッド 位相反転ブランクマスク及びフォトマスク
JP7109996B2 (ja) * 2018-05-30 2022-08-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6896694B2 (ja) * 2018-12-25 2021-06-30 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
TWI707195B (zh) * 2020-02-14 2020-10-11 力晶積成電子製造股份有限公司 相位轉移光罩的製造方法
CN111636048B (zh) * 2020-05-12 2021-05-07 清华大学 一种掩膜及其制造方法、二维材料薄膜图案制造方法
US12366798B2 (en) * 2021-06-07 2025-07-22 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography mask and methods
TWI880297B (zh) * 2023-04-03 2025-04-11 韓商Ｓ＆Ｓ技術股份有限公司 用於ｅｕｖ微影之相移空白遮罩及光遮罩
CN117872671A (zh) * 2023-12-15 2024-04-12 广州新锐光掩模科技有限公司 调整相移掩模版相位差和穿透率的方法及系统

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JP2005128278A (ja) 2003-10-24 2005-05-19 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2014137388A (ja) 2013-01-15 2014-07-28 Hoya Corp マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2014197190A (ja) 2013-03-08 2014-10-16 Hoya株式会社 マスクブランクの製造方法および位相シフトマスクの製造方法
JP2016018192A (ja) 2014-07-11 2016-02-01 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

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US5514499A (en) 1993-05-25 1996-05-07 Kabushiki Kaisha Toshiba Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same
JP3397933B2 (ja) 1995-03-24 2003-04-21 アルバック成膜株式会社 位相シフトフォトマスクブランクス、位相シフトフォトマスク、及びそれらの製造方法。
US6274280B1 (en) 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks
JP2002296758A (ja) * 2001-03-30 2002-10-09 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
DE10214092B4 (de) 2001-03-30 2012-03-15 Hoya Corp. Halbton-Phasenverschiebungsmasken-Rohling und Halbton-Phasenverschiebungsmaske
US6844119B2 (en) 2002-07-30 2005-01-18 Hoya Corporation Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask
JP2005208660A (ja) 2004-01-22 2005-08-04 Schott Ag 超高透過率の位相シフト型のマスクブランク
US7556892B2 (en) * 2004-03-31 2009-07-07 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
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JP6264238B2 (ja) 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
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JP2005128278A (ja) 2003-10-24 2005-05-19 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2014137388A (ja) 2013-01-15 2014-07-28 Hoya Corp マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2014197190A (ja) 2013-03-08 2014-10-16 Hoya株式会社 マスクブランクの製造方法および位相シフトマスクの製造方法
JP2016018192A (ja) 2014-07-11 2016-02-01 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

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WO2018037864A1 (ja) 2018-03-01
CN109643056A (zh) 2019-04-16
JP6328863B1 (ja) 2018-05-23
JP6999482B2 (ja) 2022-01-18
KR20190041461A (ko) 2019-04-22
JP2018141996A (ja) 2018-09-13
TW201820025A (zh) 2018-06-01
US20190187551A1 (en) 2019-06-20
US10942440B2 (en) 2021-03-09
SG11201901301SA (en) 2019-03-28
JPWO2018037864A1 (ja) 2018-08-30
TWI760353B (zh) 2022-04-11
CN109643056B (zh) 2022-05-03

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