KR102323354B1 - Wafer storage container - Google Patents

Abstract

The present invention relates to a wafer storage container, and in particular, by dividing a plurality of purging areas in a vertical direction inside a storage chamber and spraying a purge gas to the plurality of purging areas, it is possible to ensure uniform purging of the wafer as well. Rather, it relates to a wafer storage container that can achieve efficient purging of wafers without wasting purge gas.

Description

Wafer storage container {WAFER STORAGE CONTAINER}

The present invention relates to a wafer storage container, and to a wafer storage container for removing fumes from a wafer by supplying a purge gas to a wafer accommodated in a storage chamber.

In general, a semiconductor device is manufactured by selectively and repeatedly performing a deposition process, a polishing process, a photolithography process, an etching process, an ion implantation process, a cleaning process, an inspection process, a heat treatment process, etc. on a wafer. For this purpose, wafers are transported to specific locations required for each process.

Wafers are high-precision items and are stored or transported in a wafer storage container such as a Front Opening Unifie Pod (FOUP) to prevent contamination or damage from external contaminants and impacts.

In this case, the process gas used in the process and fumes, which are by-products of the process, remain on the wafer surface without being removed. There is a problem in that the reliability of the wafer is deteriorated due to the occurrence of pattern) defects.

Recently, in order to solve this problem, purging technologies have been developed to supply a purge gas to a wafer accommodated in a wafer storage container to remove fumes remaining on the surface of the wafer or to prevent oxidation of the wafer.

In order to achieve purging of the wafer accommodated in the wafer storage container, the wafer storage container is coupled to a supply device capable of supplying a purge gas, such as a load port, and supplies the purge gas to the wafer accommodated in the wafer storage container. will do Accordingly, the wafer receiving container is provided with a flow path through which the purge gas supplied from the supply device flows, and an injection port through which the purge gas is injected.

As described above, as a wafer storage container capable of supplying a purge gas, the one described in Korean Patent Application Laid-Open No. 2015-0087015 (hereinafter referred to as 'prior art') is known.

A wafer cassette of the prior art is configured to include a plurality of mounting tables supporting a wafer and spraying a purge gas into a storage chamber, and an intake hole communicating with an exhaust unit to exhaust the purge gas and fume of the wafer cassette.

In addition, a purge gas flow path through which the purge gas flows, and a purge gas outlet communicating with the purge gas flow path are provided in the plurality of mounting tables. Accordingly, the purge gas is supplied from the purge gas supply source, flows into the loading table through a side gas pipe communicating with the purge gas flow path, and is then sprayed into the storage chamber through the purge gas outlet.

However, in the prior art wafer cassette, since one side gas pipe communicates with the purge gas flow path provided on the plurality of mounting tables, it is impossible to individually control the purge gas injected from each of the plurality of mounting tables. Therefore, even when a wafer is accommodated only in a partial area of the storage room (for example, when a wafer is only loaded on a mounting table disposed below the storage room), the purge gas may be injected also into the central area and the upper area where the wafer is not accommodated. Inevitably, there is a problem in that unnecessary waste of purge gas may occur.

Korea Patent Publication No. 2015-0087015

The present invention has been devised to solve the above-described problem, and an object of the present invention is to provide a wafer storage container that ensures uniform purging of wafers and minimizes waste of purge gas.

In addition, another object of the present invention is to provide a wafer storage container capable of achieving independent purging of the wafer by individually controlling and spraying the purge gas injected into a plurality of purging areas partitioned in the vertical direction of the storage chamber. aim to

In addition, another object of the present invention is to provide a plurality of concave portions on the support provided in the vertical direction in the storage room to prevent the robot arm transferring the wafer from interfering when the wafer enters and exits the storage room through the front opening. It aims to provide a storage container.

In addition, another object of the present invention is to minimize the vertical flow of the purge gas injected into the storage room by minimizing the space formed between the support and the wafer when the wafer is supported on the support, and thus a plurality of purging areas partitioned in the storage room. An object of the present invention is to provide a wafer accommodating container capable of more efficiently injecting individual purge gas into the furnace.

In addition, another object of the present invention is to provide a front exhaust unit on both sides of the front side of the storage room, so that external gas is prevented from flowing into the storage room, so that purging of the wafer in the storage room can be achieved more efficiently. The purpose is to provide a container.

A wafer storage container according to one aspect of the present invention includes a storage chamber in which the wafer accommodated through the front opening is accommodated; a plurality of injection units for injecting a purge gas into the storage chamber; and an exhaust unit for evacuating the purge gas and fume of the storage chamber, wherein the storage chamber is vertically partitionable into a plurality of purging areas, and the injection unit for spraying the purge gas to each of the purging areas is individually purged. It is characterized in that the gas is supplied and sprayed to each of the purging areas.

In addition, each of the plurality of injection units has an inner wall surface of the injection unit in contact with the storage chamber, and an injection hole through which the purge gas is injected into the storage chamber is formed on the inner wall surface of the injection unit.

In addition, the plurality of spraying parts is characterized in that it is arranged to be vertically stacked to correspond to each of the plurality of purging areas partitioned in the vertical direction.

In addition, a supply unit for supplying a purge gas to the plurality of injection units; further comprising, wherein the supply unit has a plurality of vertical supply passages extending in a vertical direction, and the plurality of vertical supply passages includes the plurality of injection units and It is characterized in that each communicates.

In addition, the exhaust unit has an inner wall surface of the exhaust unit in contact with the storage chamber, and an exhaust hole is formed on the inner wall surface of the exhaust unit to exhaust the purge gas and fume of the storage chamber to the exhaust unit.

In addition, the exhaust unit includes a plurality of exhaust spaces communicating with the exhaust holes, and a plurality of vertical exhaust passages communicating with each of the plurality of exhaust spaces, wherein the plurality of exhaust spaces is a plurality of purging spaces partitioned in the vertical direction. It is characterized in that it is arranged to be vertically stacked inside the exhaust unit so as to correspond to each of the regions.

According to the wafer storage container of the present invention as described above, the following effects are obtained.

Since a sufficient amount of purge gas can be injected even to the wafers accommodated in the upper portion of the storage chamber, purging of the plurality of wafers accommodated in the storage chamber can be uniformly performed, thereby ensuring the reliability of the wafer manufacturing process. .

In addition, since the purging of the wafer can be achieved by selectively injecting the purge gas only to the region where the wafer is located among the plurality of purging regions, unnecessary waste of the purge gas can be prevented.

1 is a perspective view of a wafer storage container according to a preferred embodiment of the present invention.
Figure 2 is an exploded perspective view of Figure 1;
Fig. 3 is a front view of Fig. 1;
4 is a front view illustrating the flow of a purge gas injected into the first to third purging regions of FIG. 3;
Figure 5 is a partial perspective view showing an inner wall surface of the first injection unit of Figure 1;
FIG. 6 is a partial perspective view illustrating the 1-1 to 3-2 injection units of FIG. 1 .
7 is a partial perspective view illustrating a purge gas flow in the 1-1 to 3-2 injection units of FIG. 6;
Fig. 8 is a left sectional view showing a cross section on the left side of Fig. 1;
FIG. 9 is a right cross-sectional view illustrating a flow of an external gas exhausted to the first front exhaust part of FIG. 8 and a flow of a purge gas and fume exhausted to the exhaust part of FIG. 8 .
Figure 10 is a partial perspective view showing the inner wall surface of the second injection unit of Figure 1;
11 is a partial perspective view illustrating the 1-3 to 3-4 injection units of FIG. 1 .
12 is a partial perspective view illustrating a purge gas flow in the 1-3 to 3-4 injection units of FIG. 11 ;
Fig. 13 is a right sectional view showing a cross section on the right side of Fig. 1;
FIG. 14 is a right cross-sectional view illustrating the flow of external gas exhausted to the second front exhaust unit of FIG. 13 and the flow of purge gas and fume exhausted to the exhaust unit;
Fig. 15 is a plan cross-sectional view of Fig. 1;
16 is a plan cross-sectional view illustrating a flow of a purge gas injected to the wafer supported on the support of FIG. 15 and a flow of the purge gas and fume exhausted to the exhaust unit;
17 is a front view showing the front of the exhaust unit of FIG.
18 is a rear cross-sectional view illustrating a cross-section of the rear surface of the exhaust unit of FIG. 17;
19 is a right side view showing the right side of the first supply unit of FIG.
20 is a left side view showing the left side of the second supply unit of FIG.
Fig. 21 is a plan view of the support of Fig. 1;
22 is a view showing a wafer supported on the support of FIG.
23 is a perspective view illustrating a right side of the first front exhaust unit of FIG. 1;
24 is a cross-sectional perspective view showing a cross-section of a left side surface of the first front exhaust unit of FIG. 23;
25 is a perspective view illustrating a left side of the second front exhaust unit of FIG. 1 ;
26 is a cross-sectional perspective view illustrating a cross-section of a right side of the second front exhaust unit of FIG. 25;
27 is an exploded perspective view of the lower plate of FIG. 1 ;
28 is a plan view of the first lower plate of FIG. 27;
29 is a plan view of the second lower plate of FIG. 27;
30 is a plan view of the third lower plate of FIG. 27;
Fig. 31 is a plan view of the connection part of Fig. 27;
32 is a plan view illustrating a purge gas flow inside the lower plate of FIG. 27;
33 is a schematic diagram illustrating a purge gas supply/injection flow of a wafer storage container according to a preferred embodiment of the present invention.
34 is a schematic view showing the exhaust flow of purge gas, fume and external gas in the wafer storage container according to a preferred embodiment of the present invention.

The 'purge gas' referred to below is a generic term for an inert gas for removing fumes from a wafer, and in particular, nitrogen (N ₂ ) gas, which is one of the inert gases, may be used.

In addition, 'purging' is a generic term for removing fumes remaining on the wafer surface by spraying a purge gas on the wafer or preventing oxidation of the wafer.

A wafer storage container according to a preferred embodiment of the present invention includes a storage chamber in which a wafer accommodated through a front opening is accommodated, a plurality of injection units for spraying purge gas into the storage chamber, and a vessel for evacuating the purge gas and fume of the storage chamber. It is configured to include a base and a supply unit for supplying a purge gas to the plurality of injection units.

A front opening is formed in front of the storage chamber, and the wafer enters and exits the storage chamber through the front opening.

A support for supporting the wafer is provided inside the storage chamber, and the wafer is supported and accommodated on the support, so that the wafer accommodated through the front opening can be easily accommodated.

The plurality of injection units sprays a purge gas into the storage chamber in which the wafer is accommodated, the exhaust unit exhausts the purge gas injected into the storage chamber by the plurality of injection units and the fume of the wafer, and the supply unit discharges the purge gas injected from the outside of the wafer storage container. The purge gas is supplied to the plurality of injection units.

The above-described storage room can be partitioned into a plurality of purging areas in the vertical direction. In this case, the purging area refers to an area where each of the plurality of spraying units is individually supplied with a purge gas and sprays the purge gas into the storage chamber, in which the wafer is purged.

The number of purging areas as described above may be divided in various ways according to the use and size of the wafer storage container within the range that can achieve the object of the present invention.

In the wafer manufacturing process, since wafers are often transferred in each process in units of 10 wafers, it is preferable that purging of 10 wafers is achieved in one purging area, and the number of wafers accommodated in the wafer storage container is usually 30.

Accordingly, when the number of wafers accommodated in the wafer storage container is 30, the purging area partitioned in the storage chamber may be partitioned into, for example, three purging zones.

In this case, it is preferable that the wafer accommodating container is provided with three injection parts, that is, the first to third injection parts, so that the first to third purging areas are partitioned. Hereinafter, it will be described based on this.

As described above, when the first to third spraying units receiving the purge gas individually and injecting the purge gas into the storage chamber are provided, the storage chamber may be partitioned into the first to third purging regions. In this case, the first injection unit injects the purge gas to the first purging area, the second injection unit injects the purge gas to the second purging area, and the third injection unit injects the purge gas to the third purging area, The first to third purging areas are vertically partitioned inside the storage room.

As described above, in order to achieve partitioning of the first to third purging areas in the vertical direction in the storage chamber by injecting the purge gas into the storage chamber by individually receiving the purge gas from the first to third injection units, the first to third Each of the third jetting units may have a jetting hole having a vertical position corresponding to each of the first to third purging areas.

For example, when the first to third purging areas are partitioned in the storage room into a first purging area, a second purging area, and a third purging area in the order from bottom to top (that is, the first purging area is the lower area of the storage room, The second purging area is the middle area of the storage room, and the third purging area is the upper area of the storage room). can Accordingly, the first injector may receive the purge gas individually and inject the purge gas only to the first purging area that is the lower area of the storage chamber.

In addition, the injection hole formed in the second injection unit may be formed at a position (middle region) corresponding to the height of the second purging region, and thus, the second injection unit is individually supplied with purge gas to the middle of the storage room. The purge gas may be sprayed only to the second purging area, which is the area.

In addition, the injection hole formed in the third injection unit may be formed at a position (upper region) corresponding to the height of the third purging region, and therefore, the third injection unit receives the purge gas individually and is located in the middle of the storage room. The purge gas may be sprayed only to the third purging area, which is an area.

As described above, in the case of the wafer storage container of the present invention, the first to third spraying units receive the purge gas individually and inject the purge gas into the storage chamber, thereby forming first to third purging areas vertically partitioned inside the storage chamber. will become

Accordingly, the flow of the purge gas flowing to each of the first to third purging areas is made individually, and for this reason, unlike the prior art, the purge gas flowing into the third purging area, which is the upper area of the storage room, is transferred to the first purging area. However, since it is not necessary to flow to the second purging region, a loss in the flow amount of the purge gas does not occur.

Accordingly, in the case of the wafer storage container of the present invention, a sufficient amount of purge gas may be injected also into the third purging region, which is an upper region of the storage chamber, unlike the prior art.

In addition, since the first to third injection units are individually supplied with the purge gas, the purge gas injected into the first to third purging regions of the storage chamber is controlled by controlling the supply of the purge gas to the first to third injection units. control, and thus, the purge gas may be sprayed only to the area in which the wafer is accommodated among the first to third purging areas. Therefore, waste of the purge gas generated by spraying the purge gas to the area where the wafer is not accommodated in the prior art can be prevented. By removing the fumes, it is possible to minimize the occurrence of wafer defects caused by the failure to remove the fumes from some wafers.

In a configuration different from the above, in order to achieve partitioning of the first to third purging areas in the vertical direction in the storage chamber by injecting the purge gas into the storage chamber by individually receiving the purge gas from the first to third injection units. , The first to third injection units may be vertically stacked to correspond to the first to third purging areas partitioned in the vertical direction.

For example, when the first to third purging areas are partitioned in the storage room into a first purging area, a second purging area, and a third purging area in the order from bottom to top (that is, the first purging area is the lower area of the storage room, The second purging area is the middle area of the storage room, and the third purging area is the upper area of the storage room), the first to third spraying parts, and the first spraying part, the second spraying part, and the third The injection unit may be disposed to be stacked in a vertical direction. In this case, each of the first to third injection units may have an inner wall surface of the injection unit in contact with the storage chamber, and injection holes through which the purge gas is injected into the storage chamber may be formed on the inner wall surface of the injection unit.

Accordingly, the first injection unit may receive the purge gas individually and inject the purge gas only to the first purging area through the injection hole formed in the inner wall surface of the injection unit provided in the first injection unit.

In addition, the second injection unit may receive the purge gas individually and inject the purge gas only to the second purging area through the injection hole formed in the inner wall surface of the injection unit provided in the second injection unit, and the third injection unit may also individually The purge gas may be supplied to the third injection unit, and the purge gas may be injected only into the third purging area through the injection hole formed on the inner wall surface of the injection unit provided in the third injection unit.

As described above, when the first to third injection units are arranged to be stacked in the vertical direction to inject a purge gas to each of the first to third purging regions, each of the first to third injection units is disposed in the first to third purging regions, respectively. It may be divided into a plurality of injection units that spray the purge gas in multiple directions.

For example, the first injection unit for injecting a purge gas to the first purging area includes a 1-1 injection unit for injecting the purge gas to the front left side of the first purging area, and a purge gas to the rear left side of the first purging area. It may include a 1-2 injection unit, a 1-3 injection unit for injecting a purge gas to the front right side of the first purging area, and a 1-4 injection unit for injecting a purge gas to the rear right side of the first purging area. can

The second injection unit for injecting the purge gas to the second purging area, and the 2-1 injection unit for injecting the purge gas to the front left side of the second purging area, and the rear left side of the second purging area, similarly to the first injection unit. A 2-2 injection unit for injecting a purge gas into the , a 2-3 injection unit for injecting a purge gas to the front right side of the second purging area, and a second injection unit for injecting a purge gas to the rear right side of the second purging area It may include a -4 injection part.

The third injection unit for injecting the purge gas to the third purging area, and the 3-1 injection unit for injecting the purge gas to the front left side of the third purging area, and the rear left side of the third purging area, similarly to the first injection unit. A 3-2 injection unit for injecting a purge gas into the , a 3-3 injection unit for injecting a purge gas to the front right side of the third purging area, and a third injection unit for injecting a purge gas to the rear right side of the third purging area It may include a -4 injection part.

As described above, each of the first to third injection units is configured to include 1-1 to 1-4 injection units, 2-1 to 2-4 injection units, and 3-1 to 3-4 injection units. As a result, the purge gas can be sprayed to each of the first to third purging areas of the storage chamber without dead areas, and thereby, the fume of the wafer accommodated in the storage chamber can be efficiently removed.

Hereinafter, as an embodiment of the wafer storage container according to a preferred embodiment of the present invention, as described above, a plurality of injection units are composed of first to third injection units, and each of the first to third injection units is a first -1 to 1-4 injection units, 2-1 to 2-4 injection units, and 3-1 to 3-4 injection units will be described based on the configuration.

In this case, 30 wafers are accommodated in the storage room, and first to third purging areas are vertically partitioned by the first to third jetting units in the storage room. Accordingly, ten wafers are positioned in each of the first to third purging areas, and purging of each of the ten wafers can be achieved by the first to third ejectors.

Hereinafter, the wafer storage container 10 according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

Figure 1 is a perspective view of a wafer storage container according to a preferred embodiment of the present invention, Figure 2 is an exploded perspective view of Figure 1, Figure 3 is a front view of Figure 1, Figure 4 is the first to third purging areas of Figure 3 It is a front view illustrating the flow of the purge gas injected into It is a partial perspective view, FIG. 7 is a partial perspective view showing the purge gas flow of the 1-1 to 3-2 injection units of FIG. 6 , FIG. 8 is a left sectional view showing a cross section on the left side of FIG. 1 , and FIG. 9 is 8 is a right sectional view showing the flow of the external gas exhausted to the first front exhaust part and the flow of the purge gas and the fume exhausted to the exhaust part of FIG. 8, and FIG. 10 is a partial perspective view showing the inner wall surface of the second injection part of FIG. , FIG. 11 is a partial perspective view illustrating the 1-3 to 3-4 injection units of FIG. 1, and FIG. 12 is a partial perspective view illustrating the purge gas flow of the 1-3 to 3-4 injection units of FIG. , FIG. 13 is a right cross-sectional view showing a cross section on the right side of FIG. 1 , and FIG. 14 is a right cross-sectional view showing the flow of external gas exhausted to the second front exhaust part of FIG. 13 and the flow of purge gas and fume exhausted to the exhaust part of FIG. 15 is a plan cross-sectional view of FIG. 1 , and FIG. 16 is a plan cross-sectional view showing the flow of the purge gas injected to the wafer supported on the support of FIG. 15 and the flow of the purge gas and the fume exhausted to the exhaust unit, FIG. is a front view showing the front of the exhaust part of FIG. 1, FIG. 18 is a rear cross-sectional view showing a cross-section of the rear surface of the exhaust part of FIG. 17, and FIG. 19 is a right side view showing the right side of the first supply part of FIG. , FIG. 20 is a left side view showing the left side of the second supply unit of FIG. 1 , FIG. 21 is a plan view of the support of FIG. 1 , and FIG. 22 is a view showing that the wafer is supported on the support of FIG. 23 is a perspective view illustrating a right side of the first front exhaust unit of FIG. 1 , FIG. 24 is a cross-sectional perspective view illustrating a cross-section of the left side of the first front exhaust unit of FIG. 23 , and FIG. 25 is the second front side of FIG. A perspective view showing the left side of the exhaust unit, FIG. 26 is a cross-sectional perspective view showing a cross-section of the right side of the second front exhaust unit of FIG. 25 , FIG. 27 is an exploded perspective view of the lower plate of FIG. 1 , and FIG. 28 is FIG. 27 is a plan view of the first lower plate, FIG. 29 is a plan view of the second lower plate of FIG. 27, FIG. 30 is a plan view of the third lower plate of FIG. 27, FIG. 31 is a plan view of the connection part of FIG. 27, and FIG. 32 is 27 is a plan view showing the flow of purge gas inside the lower plate, FIG. 33 is a schematic diagram showing the flow of purge gas supply/injection of the wafer storage container according to a preferred embodiment of the present invention, and FIG. 34 is a preferred embodiment of the present invention It is a schematic diagram showing the exhaust flow of the purge gas, fume, and external gas of the wafer storage container according to the embodiment.

As shown in FIGS. 1 to 3 , the wafer storage container 10 according to a preferred embodiment of the present invention includes a storage chamber 200 in which the wafer W received through the front opening 251 is accommodated, and the storage First to third injection units 310 , 320 , 330 for injecting purge gas into the chamber 200 , and first to eighth horizontal frames forming the frames of the first to third injection units 310 , 320 , 330 . The members 111 to 118 and the first to sixth vertical members 121 to 126 , the exhaust part 400 for exhausting the purge gas and fume of the storage chamber 200 , and the first to third injection parts 310 . , 320, 330, a supply unit for supplying a purge gas, a support 600 provided inside the storage chamber 200 to support the wafer (W), and the first and second positions disposed on the front left and right sides of the storage chamber 200 . 1 and 2 front exhaust parts 710 and 750 , a lower plate 800 forming a lower surface of the wafer storage container 10 , a connection member 850 installed under the lower plate 800 , and a wafer storage It is configured to include an upper plate 900 constituting the upper surface of the container (10).

storage room (200)

Hereinafter, the storage room 200 will be described.

1 to 3 , the storage chamber 200 functions to accommodate the wafer W therein, and the first to third injection units 310 , 320 , 330 and the exhaust unit 400 . It is defined as the inner space surrounded by

A front opening 251 is formed in front of the storage chamber 200 , and the wafer W enters and exits through the front opening 251 .

The upper surface of the storage room 200 is made of an upper plate 900 , the lower surface of the storage room 200 is made of a lower plate 800 , and the circumferential surface of the storage room 200 is the first and second minutes. It is formed by the inner wall surfaces 340 and 350 of the dead part and the inner wall surface 440 of the exhaust part.

Accordingly, the storage room 200 has an upper surface, a lower surface, and a peripheral surface excluding the front opening 251 , the upper plate 800 , the inner wall surfaces 340 and 350 of the first and second injection parts, and the inside of the exhaust part. It is closed by a wall 440 .

In addition, injection holes 390 and exhaust holes 490 are formed in the first and second injection part inner wall surfaces 340 and 350 and the exhaust part inner wall surface 440 constituting the circumferential surface of the storage chamber 200, respectively. , the purge gas may be injected into the storage chamber 200 through the injection hole 490 , or the purge gas injected into the storage chamber 200 through the exhaust hole 490 and the fume of the wafer W may be exhausted.

A support 600 for supporting the wafer W is provided inside the storage room 200 , so that the wafer W is supported by the support 600 and can be easily accommodated in the storage room 200 . .

In this case, as shown in FIGS. 5 and 10 , the support 600 is manufactured by first and second support coupling parts 345 and 355 respectively provided on the left rear and right rear sides of the storage room 200 , respectively. 1 and 2 may be easily installed on the inner wall surfaces 340 and 350 of the injection unit.

In addition, a plurality of supports 600 may be provided in the vertical direction according to the number of wafers W accommodated in the storage chamber 200 . Accordingly, 30 supports 600 supporting each of the 30 wafers W are provided in the storage room 200 , and a detailed description of these supports 600 will be described later.

3 and 4 , the inside of the storage room 200 is vertically partitioned into first to third purging areas 210 , 220 , and 230 , and in this case, the first The purging area 210 , the second purging area 220 , and the third purging area 230 are sequentially partitioned.

The first to third purging regions 210 , 220 , and 230 are virtual regions partitioned inside the storage room 200 , and are applied to the purge gas injected from the first to third injection units 310 , 320 and 330 , respectively. Refers to an area in which the wafer W is purged by the

Accordingly, the wafer W accommodated in the storage chamber 200 and positioned in the first purging area 210 is purged by the purge gas sprayed from the first spraying unit 310 and in the second purging area 220 . The wafer W located in the second injection unit 320 is purged by the purge gas injected, and the wafer W located in the third purging area 230 is purged by the third injection unit 330 . purged by gas.

In addition, the purge gas supplied to the first injection unit 310, the purge gas supplied to the second injection unit 320, and the purge gas supplied to the third injection unit 330 are individually supplied, and for this A detailed description will be given later.

1st to 3rd jet unit (310, 320, 330)

Hereinafter, the first to third injection units 310 , 320 , and 330 will be described.

3 and 4 , the first to third injection units 310 , 320 , and 330 are disposed to surround the periphery of the storage room 200 , and the first injection unit 310 from the bottom to the top ), the second injection unit 320 , and the third injection unit 330 are arranged to be vertically stacked, and thus the first to third purging areas 210 , 220 , 230 partitioned in the vertical direction in the storage room 200 . ) are arranged to correspond to each.

In other words, the first injection part 310 is disposed on the lower plate 800 , the second injection part 320 is disposed on the first injection part 310 , and the third injection part 330 is The second injection unit 320 is disposed above and below the upper plate 900 . That is, the first to third injection units 310 , 320 , and 330 are vertically disposed between the lower plate 800 and the upper plate 900 in three layers. Accordingly, the first to third purging regions 210 , 220 , and 230 can be easily partitioned by the purge gas injected from the first to third injection units 310 , 320 , and 330 .

6 and 11, the first to third injection units 310, 320, and 330 are respectively the 1-1 to 1-4 injection units 310a to 310d, and the 2-1 to th injection units. 2-4 injection units (320a to 320d) and 3-1 to 3-4 injection units (330a to 330d) may be included, and in this case, 1-1 to 1-4 injection units ( 310a to 310d inject a purge gas to the first purging region 210, and the 2-1 to 2-4 injection units 320a to 320d inject a purge gas to the second purging region 220, The 3-1 to 3-4 injection units 330a to 330d spray the purge gas to the third purging area 230 .

In addition, the 1-1 and 1-2 injection units (310a, 310b), the 2-1 and 2-2 injection units (320a, 320b), the 3-1, 3-2 injection units (330a, 330b), The 1-3 and 1-4 injection units 310c and 310d, the 2-3, 2-4 injection units 320c and 320d, and the 3-3 and 3-4 injection units 330c and 330d will be described later, respectively. The purge gas is individually supplied by the first 1-1 to 3-2 external supply lines (not shown), and a detailed description thereof will be described later.

As described above, the first injection unit 310 , the second injection unit 320 , and the third injection unit 330 are arranged to be stacked in a vertical direction, and thus are distinguished from each other in a vertical direction.

In other words, the 1-1 and 1-2 injection units 310a and 310b, the 2-1 and 2-2 injection units 320a and 320b, and the third disposed on the left and rear left sides of the storage chamber 200 . The -1 and 3-2 injection units 330a and 330b are distinguished from each other in a vertical direction, and the vertical direction distinction is as follows.

A second horizontal member 112 is provided between the 1-1 and 1-2 injection units 310a and 310b and the 2-1 and 2-2 injection units 320a and 320b, so that the first The -1 and 1-2 injection units 310a and 310b and the 2-1 and 2-2 injection units 320a and 320b are separated in a vertical direction.

A third horizontal member 113 is provided between the 2-1 and 2-2 injection units 320a and 320b and the 3-1 and 3-2 injection units 330a and 330b. The -1 and 2-2 injection units 320a and 320b and the 3-1 and 3-2 injection units 330a and 330b are separated in a vertical direction.

In addition, the 1-3, 1-4 injection units 310c and 310d, the 2-3, 2-4 injection units 320c and 320d, and the 3 - 3, 3-4 injection units (330c, 330d) are distinguished from each other in the vertical direction, such a vertical direction distinction is as follows.

A sixth horizontal member 116 is provided between the 1-3 and 1-4 injection units 310c and 310d and the 2-3 and 2-4 injection units 320c and 320d, and thus, the first The -3 and 1-4 injection units 310c and 310d and the 2-3, 2-4 injection units 320c and 320d are separated in a vertical direction.

In addition, a seventh horizontal member 117 is provided between the 2-3 and 2-4 injection units 320c and 320d and the 3-3 and 3-4 injection units 330c and 330d, and thus, The 2-3 and 2-4 injection units 320c and 320d and the 3-3 and 3-4 injection units 330c and 330d are separated in a vertical direction.

In addition, the 1-1 injection unit 310a and the 1-2 injection unit 310b, the 2-1 injection unit 320a and the 2-2 division are disposed on the left and rear left sides of the storage chamber 200 . A second vertical member 122 is provided between each of the injection unit 320b and the 3-1 injection unit 330a and the 3-2 injection unit 330b. Accordingly, the 1-1 injection unit 310a and the 1-2 injection unit 310b are separated in a horizontal direction, and the 2-1 injection unit 320a and the 2-2 injection unit 320b are separated in a horizontal direction. , and the 3-1 injection unit 330a and the 3-2 injection unit 330b are separated in the horizontal direction.

In addition, the 1-3 injection part 310c and the 1-4 injection part 310d, the 2-3 injection part 320c, and the 2-4th injection part 310c and the 2-4th injection part 310c, which are disposed on the right and rear right sides of the storage room 200 A fifth vertical member 125 is provided between each of the injection unit 320d and the 3-3 injection unit 330c and the 3-4 injection unit 330d. Therefore, the 1-3 injection unit 310c and the 1-4 injection part 310d are separated in the horizontal direction, the 2-3 injection part 320c and the 2-4 injection part 320d are separated in the horizontal direction, and the 3-3 injection part ( 330c) and the third and fourth injection units 330d are separated in the horizontal direction.

The inner surfaces of the 1-1 and 1-2 injection units 310a and 310b, the 2-1 and 2-2 injection units 320a and 320b and the 3-1 and 3-2 injection units 330a and 330b. is made of the inner wall surface 340 of the first injection unit, 1-1, 1-2 injection units (310a, 310b), 2-1, 2-2 injection units (320a, 320b), and 3-1 , 3-2 The outer surface of the injection unit (330a, 330b) is made of a first injection unit outer wall surface (361).

In this case, the inner wall surface 340 of the first injection unit includes the storage chamber 200 and the 1-1 and 1-2 injection units 310a and 310b, and the 2-1 and 2-2 injection units 320a and 320b. and 3-1 and 3-2 injection units 330a and 330b.

Accordingly, the first injection unit inner wall surface 340 is the 1-1, 1-2 injection units (310a, 310b), 2-1, 2-2 injection units (320a, 320b) and 3-1, 3 - 2 forms the inner surface of the injection unit (330a, 330b) and at the same time forms the outer surface (or peripheral surface) of the storage chamber (200). In other words, the 1-1 and 1-2 injection units 310a and 310b, the 2-1 and 2-2 injection units 320a and 320b, and the 3-1 and 3-2 injection units 330a and 330b. is in contact with the left and rear left sides of the storage chamber 200 by the inner wall surface 340 of the first injection unit.

The first injection unit outer wall surface 361 is provided to be spaced apart from the first injection unit inner wall surface 340 in the opposite direction to the storage chamber 200, and the first injection unit inner wall surface 340 and the first injection unit are spaced apart from each other. A separation space is formed between the outer wall surfaces 361 .

Accordingly, the 1-1 and 1-2 injection units 310a and 310b, the 2-1 and 2-2 injection units 320a and 320b, and the 3-1 and 3-2 injection units 330a and 330b, respectively may be defined as a spaced space between the inner wall surface 340 of the first injection unit and the outer wall surface 361 of the first injection unit.

The inner surfaces of the 1-3 and 1-4 injection units 310c and 310d, the 2-3 and 2-4 injection units 320c and 320d, and the 3-3 and 3-4 injection units 330c and 330d. is made of the inner wall surface 350 of the second injection unit, 1-3, 1-4 injection units (310c, 310d), 2-3, 2-4 injection units (320c, 320d), and 3-3 , 3-4 the outer surface of the injection unit (330c, 330d) is made of a second injection unit outer wall surface (362).

In this case, the inner wall surface of the second injection unit 350 includes the storage chamber 200 and the 1-3 and 1-4 injection units 310c and 310d, and the 2-3 and 2-4 injection units 320c and 320d. and 3-3 and 3-4 injection units 330c and 330d.

Accordingly, the inner wall surface of the second injection unit 350 is the 1-3, 1-4 injection units (310c, 310d), 2-3, 2-4 injection units (320c, 320d), and 3-3, 3 -4 forms the inner surface of the injection units 330c and 330d and the outer surface (or the circumferential surface) of the storage chamber 200 at the same time. In other words, the 1-3, 1-4 injection units (310c, 310d), the 2-3, 2-4 injection units (320c, 320d), and the 3-3, 3-4 injection units (330c, 330d) is in contact with the right side and rear right side of the storage room 200 by the inner wall surface 350 of the second injection unit.

The second injection unit outer wall surface 362 is provided to be spaced apart from the second injection unit inner wall surface 350 in the opposite direction to the storage chamber 200, and the second injection unit inner wall surface 350 and the second injection unit are spaced apart from each other. A separation space is formed between the outer wall surfaces 362 .

Accordingly, the 1-3 and 1-4 injection units 310c and 310d, the 2-3 and 2-4 injection units 320c and 320d, and the 3-3 and 3-4 injection units 330c and 330d respectively may be defined as a spaced space between the inner wall surface 350 of the second injection unit and the outer wall surface 362 of the second injection unit.

A heater (not shown) for controlling the temperature and humidity inside the storage chamber 200 may be provided in the aforementioned 1-1 to 3-4 injection units 310a to 330d.

The heater may be formed of 1-1 to 3-4 heaters to correspond to the 1-1 to 3-4 injection parts 310a to 330d.

The 1-1 to 3-4 heaters are respectively disposed on the outer surfaces of the first and second injection unit outer wall surfaces 361 and 362 so as to be provided on the outside of the 1-1 to 3-4 injection units 310a to 330d. can be installed.

In this case, it is better to install a cover (not shown) at a position spaced outward from the outer wall surfaces 361 and 362 of the first and second injection units so that the 1-1 to 3-4 heaters are not exposed to the outside. desirable. Accordingly, the outermost circumferential surface of the wafer storage container 10 is made of a cover, and the 1-1 to 3-4 heaters are positioned between the first and second injection unit outer wall surfaces 361 and 362 and the cover. do.

The 1-1 to 3-4 heaters are preferably individually controlled, and for this reason, the first to third purging areas 210 and 220 among the 1-1 to 3-4 injection units 310a to 330d. , 230), it is possible to operate only the heater corresponding to the injection unit that injects the purge gas.

For example, when the second-second injection unit 320b injects the purge gas to the second purging region 220 , the second-second heater operates, and thus the purge gas injected from the second-second injection unit 320b. and the second purging area 220 of the storage room 200 may be heated. Therefore, the purging of the wafer W accommodated in the second purging area 220 can be easily performed, and the humidity inside the second purging area 220 is lowered, thereby preventing oxidation of the wafer W. have.

As described above, the individual control of the 1-1 to 3-4 heaters may be organically performed with the individual control of the 1-1 to 3-4 injection units 310a to 330d. Therefore, temperature and humidity control by the heater can be achieved only in the desired purging area among the first to third purging areas 210 , 220 , and 230 . Antioxidation can be achieved.

spray hole (390)

Hereinafter, the injection hole 390 formed in the inner wall surface 340 of the first injection unit and the inner wall surface 350 of the second injection unit will be described.

As shown in FIGS. 3, 5, 8, 10 and 13 , a plurality of injection holes 390 are formed in the inner wall surface 340 of the first injection unit and the inner wall surface 350 of the second injection unit. .

In this case, the plurality of injection holes 390 may be formed in a matrix form having rows and columns, and as described above, the wafer storage container 10 according to the preferred embodiment of the present invention includes 30 wafers (W). Since it accommodates and purging, it is preferable that the plurality of injection holes 390 have 30 rows.

In addition, it is preferable that the plurality of injection holes 390 are formed so as to be respectively located on the upper portions of the 30 supports 600 . In other words, by being formed on the inner wall surfaces 340 and 350 of the first and second injection units so that a plurality of injection holes 390 are located in each of the upper and lower portions of the support 600 , each supported by the 30 supports 600 . The purge gas may be easily sprayed onto the upper 30 wafers (W).

Among the injection holes 390 formed on the inner wall surface 340 of the first injection unit, the injection holes 390 positioned at a height corresponding to the first purging area 210 are the first 1-1 and 1-2 injection units 310a, 310b) and the left and rear left sides of the first purging area 210 are communicated. Accordingly, the purge gas supplied to the inside of the 1-1 and 1-2 injection units 310a and 310b may be injected to the left and rear left sides of the first purging area 210 through the injection hole.

Among the injection holes 390 formed on the inner wall surface 340 of the first injection unit, the injection holes 390 positioned at a height corresponding to the second purging area 220 are the 2-1 and 2-2 injection units 320a, 320b) and the left and rear left sides of the second purging area 220 are communicated. Accordingly, the purge gas supplied to the inside of the 2-1 and 2-2 injection units 320a and 320b may be injected to the left and rear left sides of the first purging area 210 through the injection hole.

Among the injection holes 390 formed on the inner wall surface 340 of the first injection unit, the injection holes 390 positioned at a height corresponding to the third purging area 230 are the 3-1 and 3-2 injection units 330a, 330b) and the left and rear left sides of the third purging area 230 are respectively communicated. Accordingly, the purge gas supplied to the inside of the 3-1 and 3-2 injection units 330a and 330b may be injected to the left and rear left sides of the first purging area 210 through the injection hole.

Among the injection holes 390 formed in the inner wall surface 350 of the second injection unit, the injection holes 390 positioned at a height corresponding to the first purging area 210 are the first 1-3, 1-4 injection units 310c, 310d) and the right side and rear right side of the first purging area 210 are communicated. Accordingly, the purge gas supplied to the inside of the 1-3, 1-4 injection units 310c and 310d may be injected to the right and rear right sides of the first purging area 210 through the injection hole.

Among the injection holes 390 formed in the inner wall surface of the second injection unit 350, the injection holes 390 positioned at a height corresponding to the second purging region 220 are the second-3, 2-4 injection units 320c, 320d) and the right and rear right sides of the second purging area 220 are communicated. Accordingly, the purge gas supplied to the inside of the 2-3 and 2-4 injection units 320c and 320d may be injected to the right and rear right sides of the first purging area 210 through the injection hole.

Among the injection holes 390 formed in the inner wall surface 350 of the second injection unit, the injection holes 390 positioned at a height corresponding to the third purging area 230 are 3-3, 3-4 injection units 330c, 330d) and the right and rear right sides of the third purging area 230 are communicated. Accordingly, the purge gas supplied to the inside of the 3-3 and 3-4 injection units 330c and 330d may be injected to the right and rear right sides of the first purging area 210 through the injection hole.

As described above, the 1-1 to 3-4 injection parts 310a to 330d are first to third through injection holes formed in the first injection part inner wall surface 340 and the second injection part inner wall surface 350 . The purge gas is injected into the purging areas 210 , 220 , and 230 , that is, the storage chamber 200 .

In this case, as a predetermined purge gas is supplied and stored in each of the 1-1 to 3-2 injection units 310a to 330b, the internal pressure of the purge gas stored in the respective injection units is increased, and the internal pressure The purge gas is injected into the first to third purging regions 210 , 220 , and 230 through the injection hole 390 by the

As described above, the purge gas is injected from the injection hole 390 of the inner wall surface 340 of the first injection unit and the inner wall surface 350 of the second injection unit forming the circumferential surface of the storage chamber 200, so that a dead area compared to the prior art. has the effect of being able to minimize

In detail, in the case of the prior art, separate injection members provided with injection holes are provided on both sides of the storage chamber to spray the purge gas, but in the case of the wafer storage container 10 according to the preferred embodiment of the present invention, the first , a purge gas is sprayed by directly forming the injection hole 390 on the inner wall surfaces 340 and 350 of the second injection unit. Therefore, by simply forming the injection holes 390 on the inner wall surfaces 340 and 350 of the first and second injection units, the injection direction of the purge gas injected into the first to third purging regions 210 , 220 , 230 is facilitated. can be easily adjusted, and for this reason, it is possible to easily form an optimal arrangement of the injection holes 390 that minimizes the occurrence of dead areas.

In addition, by forming the injection holes 390 on the inner wall surfaces 340 and 350 of the first and second injection units, the number of injection holes 390 can be easily added, and the number of injection holes 390 increases. When the plurality of injection holes 390 are densely arranged, a kind of surface injection effect is achieved such that the purge gas is injected from the entire inner wall surfaces 340 and 350 of the first and second injection units that are the peripheral surfaces of the storage chamber 200 . can do. Therefore, unlike the prior art, a uniform injection pressure can be ensured, and thus, it is possible to prevent the injection of the purge gas from being concentrated in only a portion of the wafer W.

In addition, when the injection hole 390 is contaminated and clogged by fume due to long-term use of the wafer storage container 10, by replacing the inner wall surfaces 340 and 350 of the first and second injection units, the injection hole 390 ) can solve problems due to clogging, so that easy maintenance of the wafer storage container 10 can be achieved.

Also, unlike the above-described embodiment, the injection hole 390 may have 30 or more rows in a vertical direction from the inner wall surfaces 340 and 350 of the first and second injection units. In other words, one injection hole 390 is not located between the plurality of supports 600 , and two or more injection holes 390 may be formed in the vertical direction. Accordingly, more than ten injection holes 390 may be formed in one purging area in the vertical direction, and thereby, purging of the wafer W may be more easily achieved.

In addition, the shape of the injection hole 390 may be formed to have various shapes, such as a rectangular slit shape, a slit shape having an arc end, a circular hole shape, a polygonal hole shape, and the like.

Articles 1-1 to 3- 2Supply hole (371a to 373b) and 1-3 to 3-4 supply holes (371c to 373d)

Hereinafter, 1-1 to 3-2 supply holes 371a to 373b formed on the outer wall surface 361 of the first injection unit, and 1-3 to th supply holes formed on the outer wall surface 362 of the second injection unit 3-4 supply holes 371c to 373d will be described.

6 and 7, the 1-1 to 3-2 supply holes 371a to 373b are formed in the outer wall surface 361 of the first injection unit.

The 1-1 supply hole 371a communicates with the inside of the 1-1 injection part 310a and the 1-1 supply space 531a of the first supply part 510, and thus, the 1-1 supply space The purge gas of 531a may flow into the first-first injection unit 310a.

The 1-2 supply hole 371b communicates with the inside of the 1-2 injection part 310b and the 1-2 supply space 531b of the first supply part 510, and thus, the 1-2 supply space The purge gas of 531b may flow into the first-second injection unit 310b.

The 2-1 supply hole 372a communicates with the inside of the 2-1 injection unit 320a and the 2-1 supply space 532a of the first supply unit 510, and thus, the 2-1 supply space The purge gas of 532a may flow into the second-first injection unit 320a.

The 2-2 supply hole 372b communicates with the inside of the 2-1 injection unit 320a and the 2-1 supply space 532a of the first supply unit 510, and thus, the 2-1 supply space The purge gas of 532a may flow into the second-first injection unit 320a.

The 3-1 supply hole 373a communicates with the inside of the 3-1 injection part 330a and the 3-1 supply space 533a of the first supply part 510, and thus, the 3-1 supply space The purge gas of 533a may flow into the 3-1 injection unit 330a.

The 3-2 supply hole 373b communicates with the inside of the 3-2 injection part 330b and the 3-2 supply space 533b of the first supply part 510, and thus, the 3-2 supply space The purge gas of 533b may flow into the 3-2nd injection part 330b.

11 and 12 , the 1-3 th to 3-4 th supply holes 371c to 373d are formed in the outer wall surface 362 of the second injection unit.

The 1-3 supply hole 371c communicates with the inside of the 1-3 injection part 310c and the 1-3 supply space 531c of the second supply part 520, and thus, the 1-3 supply space The purge gas of 531c may flow into the 1-3 injection unit 310c.

The 1-4th supply hole 371d communicates with the inside of the 1-4th injection part 310d and the 1-4th supply space 531d of the second supply part 520, and thus, the 1-4th supply space The purge gas of 531d may flow into the 1-4th injection part 310d.

The 2-3th supply hole 372c communicates with the inside of the 2-3rd injection part 320c and the 2-3th supply space 532c of the 2nd supply part 520, and, thereby, the 2-3th supply space The purge gas of the 532c may flow into the 2-3th injection part 320c.

The 2-4th supply hole 372d communicates with the inside of the 2-4th injection part 320d and the 2-4th supply space 532d of the second supply part 520, and thus, the 2-4th supply space The purge gas of 532d may flow into the 2-4th injection part 320d.

The 3-3 supply hole 373c communicates with the inside of the 3-3 injection part 330c and the 3-3 supply space 533c of the second supply part 520, and thus, the 3-3 supply space The purge gas of 533c may flow into the third-third injection unit 330c.

The 3-4th supply hole 373d communicates with the inside of the 3-4th injection part 330d and the 3-4th supply space 533d of the 2nd supply part 520, and thus, the 3-4th supply space The purge gas of 533d may flow into the 3-4th injection part 330d.

The aforementioned 1-1 to 3-4 supply holes 371a to 373d are preferably formed in a slit shape in which a vertical length is longer than a horizontal length.

In addition, the horizontal lengths of the 1-1 to 3-4 supply holes 371a to 373d are the first and second supply portions communicating with the 1-1 to 3-4 supply holes 371a to 373d, respectively. It is preferable to be formed shorter than the horizontal length of the 1-1 to 3-4 supply spaces 531a to 533d.

This is when the purge gas flows from the 1-1 to 3-4 supply spaces 531a to 533d to the 1-1 to 3-4 supply holes 371a to 373d. By flowing from the 1-1 to 3-4 supply spaces 531a to 533d to the 1-1 to 3-4 supply holes 371a to 373d having a relatively small area, the injection pressure of the purge gas is instantly increased. because it can be raised to

As described above, when the injection pressure of the purge gas is momentarily increased, the purge gas can easily flow into the entire interior of the 1-1 to 3-4 injection parts 310a to 330d. The purge gas injected from the first to third-four injection units 310a to 330d may be more smoothly injected into the entire first to third purging regions 210 , 220 , and 230 .

First to eighth horizontal members (111 to 118) and first to sixth vertical members (121 to 126)

Hereinafter, the first to eighth horizontal members 111 to 118 and the first to sixth vertical members 121 to 126 will be described.

2 and 6 , the first to fourth horizontal members 111 to 114 and the first to third vertical members 121 to 123 are disposed on the left side of the storage room 200 .

The first to fourth horizontal members 111 to 114 are connected by the first to third vertical members 121 to 123, and due to this connection structure, the first to fourth horizontal members 111 to 114 and the second The first to third vertical members 121 to 123 form the skeleton of the 1-1 to 3-2 injection units 310a to 330b, that is, the frames.

In this case, each of the first to fourth horizontal members 111 to 114 and the first to third vertical members 121 to 123 may have a predetermined width, and the width is the inner wall surface of the first injection unit 340 . And it has the same size as the width of the space between the first injection part outer wall surface 361. Accordingly, the width of the inner space of the 1-1 to 3-2 injection units 310a to 330b may be defined by the width.

2 and 10 , the fifth to eighth horizontal members 115 to 118 and the fourth to sixth vertical members 124 to 126 are disposed on the right side of the storage room 200 .

The fifth to eighth horizontal members 115 to 118 are connected by the fourth to sixth vertical members 124 to 126, and due to this connection structure, the fifth to eighth horizontal members 115 to 118 and the first The fourth to sixth vertical members 124 to 126 form the skeleton, that is, the frame, of the 1-3 to 3-4 injection parts 310c to 330d.

In this case, each of the fifth to eighth horizontal members 115 to 118 and the fourth to sixth vertical members 124 to 126 may have a predetermined width, and the width is the inner wall surface of the second injection unit 350 . And it has the same size as the width of the space between the second injection part outer wall surface (362). Accordingly, the width of the inner space of the 1-3 to 3-4 injection parts 310c to 330d is defined by the width.

exhaust (400)

Hereinafter, the exhaust unit 400 will be described.

As shown in FIGS. 2 to 14 , the exhaust unit 400 includes 1-2 to 3-2 injection units 310b, 320b, and 330b and 1-4 to 3-4 injection units 310d, 320d and 330d). Accordingly, the first to third injection units 310 , 320 , and 330 serve to exhaust the purge gas injected into the storage chamber 200 and the fume of the wafer W to the rear of the storage chamber 200 . .

As shown in FIGS. 5, 6, 10, 11 and 17 , the inner surface of the exhaust part 400 is formed of the exhaust part inner wall surface 440 .

In this case, the exhaust part inner wall surface 440 is provided between the storage chamber 200 and the exhaust part 400 .

Accordingly, the inner wall surface 440 of the exhaust unit forms the inner surface of the exhaust unit 400 and the outer surface (or peripheral surface) of the storage chamber 200 at the same time. In other words, the exhaust unit 400 is in contact with the rear of the storage chamber 200 by the inner wall surface 440 of the exhaust unit.

A plurality of exhaust holes 490 are formed in the inner wall surface 440 of the exhaust unit, and as described above, the wafer storage container 10 according to the preferred embodiment of the present invention accommodates and purges 30 wafers (W). Therefore, it is preferable that 30 exhaust holes 490 are formed in the exhaust portion inner wall surface 440 .

In this case, the 30 exhaust holes 490 are formed in the vertical direction, and each exhaust hole 490 is preferably positioned to have the same height as the row of the aforementioned injection holes 390 . In other words, the exhaust hole 490 is preferably formed so as to be respectively positioned on the upper portion of the 30 supports 600 , like the injection hole 390 .

17 and 18 , the exhaust unit 400 includes first to third exhaust spaces 410 , 420 and 430 communicating with the exhaust hole 490 , and first to third exhaust spaces 410 . , 420 , and 430 may be provided with first to third vertical exhaust passages 411 , 421 , and 431 respectively communicating with each other.

The first to third exhaust spaces 410 , 420 , and 430 are a first exhaust space 410 , a second exhaust space 420 , and a third exhaust space 430 in the order from bottom to top inside the exhaust unit 400 . are arranged to be stacked, and thus correspond to each of the first to third purging areas 210 , 220 , and 230 partitioned in the vertical direction in the storage room 200 .

Accordingly, the purge gas injected into the first purging region 210 and the fume of the wafer W are exhausted through the exhaust hole 490 communicating with the first exhaust space 410, and the second exhaust space 420 and The purge gas injected into the second purging region 220 and the fume of the wafer W are exhausted through the communicating exhaust hole 490 , and discharged through the exhaust hole 490 communicating with the third exhaust space 430 . 3 The purge gas injected into the purging area 230 and the fume of the wafer W are exhausted.

In this case, the number of exhaust holes 490 communicating with the first exhaust space 410 is 10, the number of exhaust holes 490 communicating with the second exhaust space 420 is 10, and the third exhaust space ( The number of exhaust holes 490 communicating with the 430 is 10.

Accordingly, the fume of the ten wafers W to be accommodated in the first purging region 210 may be exhausted to the first exhaust space 410 together with the purge gas, and to be accommodated in the second purging region 220 . The fumes of the ten wafers W may be exhausted into the second exhaust space 420 together with the purge gas, and the fumes of the ten wafers W to be accommodated in the third purging area 230 are discharged together with the purge gas. It may be exhausted into the third exhaust space 430 .

The first vertical exhaust passage 411 is provided to extend vertically inside the exhaust unit 400 , one end communicates with the first exhaust space 410 , and the other end of the first lower plate 810 to be described later. It communicates with the exhaust communication hole 815a. Accordingly, the first vertical exhaust passage 411 serves as a passage for flowing the purge gas exhausted into the first exhaust space 410 to the first exhaust communication hole 815a.

The second vertical exhaust passage 421 is provided to extend vertically inside the exhaust unit 400 , one end communicates with the second exhaust space 420 , and the other end of the first lower plate 810 to be described later. It communicates with the exhaust communication hole 815b. Accordingly, the second vertical exhaust passage 421 serves as a passage for flowing the purge gas exhausted into the second exhaust space 420 to the second exhaust communication hole 815b.

The third vertical exhaust passage 431 is provided to extend vertically inside the exhaust unit 400 , one end is in communication with the third exhaust space 430 , and the other end is the third of the first lower plate 810 to be described later. It communicates with the exhaust communication hole 815c. Accordingly, the third vertical exhaust passage 431 serves as a passage for flowing the purge gas exhausted into the third exhaust space 430 to the third exhaust communication hole 815c.

As described above, an exhaust hole 490 is formed in the exhaust portion inner wall surface 440 of the exhaust portion 400 constituting the circumferential surface of the storage chamber 200 , and the purge gas and the wafer W are formed through the exhaust hole 490 . By evacuating the fume, there is an effect that the maintenance of the wafer storage container 10 is easy. That is, when the exhaust hole 490 is contaminated and clogged by the fume, problems caused by clogging of the exhaust hole 490 can be easily solved by replacing only the exhaust inner wall surface 440 .

In addition, unlike the above-described embodiment, 30 or more exhaust holes 490 may be formed in the vertical direction from the inner wall surface 440 of the exhaust part. In other words, one exhaust hole 490 is not located between the plurality of supports 600 , and two or more injection holes 490 may be formed in the vertical direction. Accordingly, more than 10 exhaust holes 490 may be formed in one purging area in the vertical direction, and thereby, exhaust of fumes generated after purging the wafer W can be more easily achieved. .

In addition, the shape of the exhaust hole 490 may be formed to have various shapes, such as a rectangular slit shape, a slit shape having an arc end, a circular hole shape, a polygonal hole shape, and the like.

supply

Hereinafter, the supply unit will be described.

As shown in FIGS. 2, 5, 6, 10, 11 and 15, the supply unit is disposed outside the 1-1 to 3-2 injection units 310a to 330b, and the storage chamber 200 ), the first supply unit 510 disposed on the left side, and the first 1-3 to 3-4 injection units 310c to 330d disposed outside the storage chamber 200 and disposed on the right side based on the It may be composed of two supply units 520 .

The first supply unit 510 serves to supply the purge gas introduced through the lower plate 800 to the 1-1 to 3-2 injection units 310a to 330b, and the second supply unit 520 is located at the bottom It functions to supply the purge gas introduced through the plate 800 to the 1-3 to 3-4 injection units 310c to 330d.

As shown in FIG. 19 , in the first supply unit 510 , the 1-1 to 3-2 supply spaces 531a to 533b communicated with the 1-1 to 3-2 supply holes 371a to 373b, respectively. ), and 1-1 to 3-2 vertical supply passages 541a to 543b communicating with each of the 1-1 to 3-2 supply spaces 531a to 533b are provided.

The 1-1 to 3-2 supply spaces 531a to 533b have a purge gas stored therein, and the 1-1 to 3-th supply holes 371a to 373b are used to store the purge gas therein. Refers to the space supplied to the second injection unit (310a ~ 330b), it is formed by opening the right side of the first supply unit (510).

The 1-1 to 3-1 supply spaces 531a, 532a, and 533a are formed on the front side with respect to the center line (C1 of FIG. 19 ) of the first supply unit 510 , and the 1-2 to 3-th supply spaces The second supply spaces 531b, 532b, and 533b are formed on the rear side with respect to the center line (C1 of FIG. 19 ) of the first supply unit 510 . That is, the 1-1 to 3-1 supply spaces (531a, 532a, 533a) and 1-2 to 3-2 supply spaces (531b, 532b, 533b) are the center lines of the first supply unit 510 (Fig. 19, they are arranged symmetrically with respect to C1).

Each of the 1-1 to 3-2 supply spaces 531a to 533b corresponds to the 1-1 to 3-2 supply holes 371a to 373b, respectively, the 1-1 supply space 531a and The 1-2 supply space 531b, the 2-1 supply space 532a and the 2-2 supply space 532b, the 3-1 supply space 533a and the 3-2 supply space 533b are They are sequentially arranged from the lower part of the first supply unit 510 to the upper part.

In addition, the 1-1 supply space 531a and the 1-2 supply space 531b, the 2-1 supply space 532a and the 2-2 supply space 532b, and the 3-1 supply space 533a ) and the third-second supply space (533b), the size of the supply space is formed larger.

As described above, as the size of the supply space increases toward the upper portion of the first supply unit 510 , the flow amount of the purge gas flowing into the 3-1 supply space 533a and the 3-2 supply space 533b is increased, and therefore, a sufficient amount of purge gas may be supplied to the 3-1 injection unit 330a and the 3-2 injection unit 330b.

Accordingly, the 3-1 injection unit 330a and the 3-2 injection unit 330b can inject a sufficient amount of purge gas into the third purging area 230 , and are partitioned in the upper part of the storage chamber 200 . Purging of the wafer W in the third purging area 230 can be easily achieved.

The 1-1 to 3-2 vertical supply passages 541a to 543b are formed to extend in the vertical direction inside the first supply unit 510, and each end has a 1-1 to 3-2 supply space ( 531a to 533b), and the other end of each communicates with the 1-1 to 3-2 supply communication holes 811a to 813b formed in the first lower plate 810 . Accordingly, the 1-1 to 3-2 vertical supply passages 541a to 543b are configured to remove the purge gas introduced from the 1-1 to 3-2 supply communication holes 811a to 813b in the 1-1 to third -2 It serves as a passage for flow to the supply space (531a ~ 533b).

In this case, the other end of each of the 1-1 to 3-2 vertical supply passages 541a to 543b may be formed in the form of a hole opened in the lower surface of the first supply part, and thus, the first to third supply passages 541a to 543b 3-2 It can be easily communicated with the supply communication holes (811a ~ 813b).

As shown in FIG. 20 , in the second supply unit 520 , the 1-3 to 3-4 supply spaces 531c to 533d communicated with the 1-3 to 3-4 supply holes 371c to 373d, respectively. ), and 1-3 to 3-4 vertical supply passages 541c to 543d communicating with each of the 1-3 to 3-4 supply spaces 531c to 533d are provided.

The 1-3 to 3-4 supply spaces 531c to 533d have a purge gas stored therein, and the 1-3 to 3-th supply holes 371c to 373d through the 1-3th to 3-4th supply holes 371c to 373d. It refers to a space supplied to the 4 injection units 310c to 330d, and is formed by opening the left side of the second supply unit 520 .

The 1-3 to 3-3 supply spaces 531c, 532c, and 533c are formed on the front side with respect to the center line (C2 of FIG. 20) of the second supply unit 520, and the 1-4 to 3-th supply spaces 4 supply spaces 531d, 532d, and 533d are formed on the rear side with respect to the center line (C2 of FIG. 20 ) of the second supply unit 520 . That is, the 1-3 to 3-3 supply spaces 531c, 532c, 533c and the 1-4 to 3-4 supply spaces 531d, 532d, 533d are the center lines of the second supply unit 520 (Fig. 20, they are arranged symmetrically with respect to C2).

Each of the 1-3 to 3-4 supply spaces 531c to 533d corresponds to the 1-3 to 3-4 supply holes 371c to 373d, respectively, the 1-3 supply space 531c and The 1-4th supply space 531d, the 2-3th supply space 532c, and the 2-4th supply space 532d, the 3-3rd supply space 533c, and the 3-4th supply space 533d have The second supply unit 520 is sequentially disposed from the lower part to the upper part.

In addition, the 1-3 supply space 531c and the 1-4 supply space 531d, the 2-3 supply space 532c and the 2-4 supply space 532d, and the 3-3 supply space 533c ) and the third-fourth supply space (533d), the size of the supply space is formed larger.

As described above, as the size of the supply space increases toward the upper portion of the second supply unit 520 , the flow amount of the purge gas flowing into the 3-3 supply space 533c and the 3-4 supply space 533d is increased, and thus, a sufficient amount of purge gas may be supplied to the third-third injection unit 330c and the third-fourth injection unit 330d.

Accordingly, the 3-3 injection unit 330c and the 3-4 injection unit 330d can inject a sufficient amount of purge gas into the third purging area 230 , and are partitioned in the upper part of the storage chamber 200 . Purging of the wafer W in the third purging area 230 can be easily achieved.

1-3 to 3-4 vertical supply passages (541c to 543d) are formed to extend in the vertical direction inside the second supply unit 520, each end of the 1-3 to 3-4 supply space ( 531c to 533d), and the other end of each communicates with the 1-3 to 3-4 supply communication holes 811c to 813d formed in the first lower plate 810 . Accordingly, the 1-3 to 3-4 vertical supply passages 541c to 543d remove the purge gas introduced from the 1-3 to 3-4 supply communication holes 811c to 813d with the 1-3 to third -4 It serves as a passage to flow to the supply space (531c ~ 533d).

In this case, the other end of each of the 1-3 to 3-4 vertical supply passages 541c to 543d may be formed in the form of a hole opened in the lower surface of the second supply unit 520 , and thus, the first- The 3rd to 3-4th supply communication holes 811c to 813d can be easily communicated with each other.

Due to the configuration of the first supply unit 510 and the second supply unit 520 as described above, the purge gas introduced through the lower plate 800 is directed to the 1-1 to 3-4 injection units 310a to 330d. can be easily supplied.

As described above, in the wafer storage container 10 according to a preferred embodiment of the present invention, the first supply unit 510 is disposed on the outside of the 1-1 to 3-2 injection units 310a to 330b, and the first -1 to 3-2 supplying a purge gas to the inside of the injection units (310a to 330b), the second supply unit 520 is disposed outside the 1-3 to 3-4 injection parts (310c to 330d), A purge gas is supplied to the inside of the 1-3 to 3-4 injection parts 310c to 330d.

Therefore, it is possible to achieve the supply of the purge gas to the 12 injection units by using only the two supply units, thereby achieving a compact structure of the wafer storage container 10 .

Support (600)

Hereinafter, the support 600 will be described.

As shown in FIGS. 1 to 3 , the support 600 functions to support the wafer W accommodated in the storage room 200 , and a plurality of them may be provided in the vertical direction in the storage room 200 . can In this case, since the wafer storage container 10 according to a preferred embodiment of the present invention purifies 30 wafers W, 30 of the supporters 600 are provided.

21 and 22, the support 600 includes a rear support 610, a left support 620 that extends from the left side of the rear support 610 in the forward direction, and a rear support 610. It is configured to include a right support portion 630 formed to extend in the forward direction from the right side of the.

The back support 610 functions to support the back of the wafer W, and the back support 610 has a rear arc 611 formed therein.

The rear arc part 611 is formed to be stepped downward from the upper surface of the rear support part 610 and has an arc shape.

In this case, the back arc part 611 has a circular arc shape having the same curvature as the curvature of the wafer W, so that the back arc part 611, the left arc part 621, and the right arc part 631 are virtual. A circular shape like the wafer (W) is made.

A rear protrusion 612 is formed in the rear arc portion 611 , and the rear protrusion 612 functions to support the rear lower surface of the wafer (W).

The left support part 620 is formed to extend from the left side of the rear support part 610 in the forward direction, and functions to support the left side of the wafer (W). In addition, a left circular arc portion 621 is formed in the left support portion 620 .

The left arc part 621 is formed to be stepped downward from the upper surface of the left support part 620 and has an arc shape.

In this case, the left arc part 621 has an arc shape having the same curvature as the curvature of the wafer W, so that the rear arc part 611 , the left arc part 621 and the right arc part 631 are virtual. A circular shape like the wafer (W) is made.

A left protrusion 622 is formed in the left arc portion 621 , and the rear protrusion 612 functions to support the right lower surface of the wafer (W).

The right support part 630 is formed to extend from the left side of the right support part 630 in the forward direction, and functions to support the right side of the wafer (W). In addition, a right circular arc part 631 is formed in the right support part 630 .

The right arc part 631 is formed to be stepped downward from the upper surface of the right support part 630 and has an arc shape.

In this case, the right arc part 631 has an arc shape having the same curvature as the curvature of the wafer W, so that the rear arc part 611 , the left arc part 621 and the right arc part 631 are virtual. A circular shape like the wafer (W) is made.

A right protrusion 632 is formed in the right arc portion 631 , and the rear protrusion 612 functions to support the left lower surface of the wafer (W).

As described above, the rear protrusion 612 , the left protrusion 622 , and the right protrusion 632 support the rear, left and right lower surfaces of the wafer W, respectively, so that the wafer W is supported at three points. As such, the wafer W is supported at three points by the three protrusions, so that the contact area of the wafer W can be minimized, thereby preventing the wafer W from being damaged due to the contact of the wafer W. can do.

A left inclined portion 640 may be formed on an outer surface of a portion from which the rear support portion 610 and the left support portion 620 extend.

The left inclined portion 640 is inclined in an outward direction from the rear to the front.

A right inclined portion 650 may be formed on an outer surface of a portion where the rear support portion 610 and the right support portion 630 extend.

The right inclined portion 650 is also inclined in an outward direction from the rear to the front.

As described above, the left and right inclined portions 640 and 650 are related to the compact structure of the wafer storage container 10 .

That is, the left and right sides of the wafer storage container 10 are formed with inclined portions such as left and right inclined portions 640 and 650, and the left and right inclined portions 640 and 650 are supporters to have corresponding shapes. (600) is formed.

The above inclined portions function to minimize the area of the wafer storage container 10 , and thereby, the wafer storage container 10 has a compact structure.

A left concave portion 660 is formed on the inner surface of the portion from which the rear support 610 and the left support 620 extend, and a right concave portion is formed on the inner surface of the portion from which the rear support 610 and the right support 630 extend. A portion 670 is formed.

The left concave portion 660 is concave in the rear direction between the rear arc portion 611 and the left arc portion 621 .

The right concave portion 670 is formed to be concave in the rear direction between the rear arc portion 611 and the right arc portion 631 .

The left and right concave portions 660 and 670 as described above are formed when the wafer W is accommodated in the storage chamber 200 by the robot arm (not shown), the fingers (not shown) of the robot arm support the support 600, That is, it functions to prevent contact with the inner surface of the rear support part 610 , and thereby, the wafer W easily enters and exits the storage room 200 through the front opening 251 to the support 600 . can be supported

Due to the configuration and shape of the support 600 as described above, as shown in FIG. 22 , when the wafer W is supported on the support 600 , the vertical flow of the purge gas inside the storage chamber 200 is minimized. can do.

In detail, the wafer W has a rear protrusion 612, a left protrusion 622 and a right protrusion 632 formed in each of the rear arc portion 611, the left arc portion 621 and the right arc portion 631. When supported at three points by , the region except for the left and right concave portions 660 and 670 of the support 600 is closed by the wafer W. Accordingly, the support 600 on which the wafer W is supported serves as a kind of partition in the vertical direction inside the storage room 200 , and thus, the vertical flow of the purge gas may be restricted.

In addition, even if the regions in which the left and right concave portions 660 and 670 are formed in the support 600 are not closed by the wafer W, the purge gas is applied to the regions in which the left and right concave portions 660 and 670 are located. Since it is injected in the horizontal direction, the vertical flow of the purge gas may be restricted by the purge gas injected in the horizontal direction.

In detail, the injection hole 390 of the 1-2 injection part 310b, the 2-2 injection part 320b, and the 3-2 injection part 330b is located in the left concave part 660. The purge gas is sprayed in the direction. In addition, the injection holes 390 of the 1-4 injection part 310d, the 2-4 injection part 320d, and the 3-4 injection part 330d are purged in the direction in which the right concave part 670 is located. gas will be injected.

As described above, the injection holes 390 of the first to third injection units 310 , 320 , and 330 inject the purge gas in the direction in which the left and right concave portions 660 are located. In this case, the injected purge The gas is sprayed in the horizontal direction. Accordingly, the purge gas forms a kind of horizontal layer and is sprayed to flow.

By the purge gas flowing in such a horizontal layer, it is possible to prevent the purge gas from flowing in the vertical direction through the left and right concave portions 660 and 670 , and thereby, the support 600 is the purge gas. Limiting vertical flow can be achieved.

The limitation of the vertical flow of the purge gas by the above-described support 600 makes it possible to more efficiently achieve individual control of the first to third injection units 310 , 320 , and 330 , which will be described later.

In addition, the aforementioned support 600 has been described based on the fact that the left and right concave portions 660 and 670 are formed in order to prevent the fingers of the robot arm from contacting the support 600 , but the fingers of the robot arm Depending on the shape, the support 600 may be formed in a shape without the left and right concave portions 660 and 670 . Accordingly, when the wafer W is supported on the support 600 , the inner space (a space opened to support the wafer W) of the support 600 is closed by the wafer W, and the above-described It is possible to more effectively achieve restriction of the vertical flow of the purge gas.

1st front exhaust (710) and the second front exhaust (750)

Hereinafter, the first front exhaust unit 710 and the second front exhaust unit 750 will be described.

1, 2, 5, 6, 10 and 11, the first and second front exhaust units 710 and 750 are respectively disposed on both sides of the front of the storage room 200, and the outside By evacuating the gas, it functions to block the inflow of the external gas into the storage chamber 200 .

In this case, the outside gas refers to any gas including outside air.

The first front exhaust part 710 is disposed in front of the 1-1 to 3-1 injection parts 310a, 320a, and 330a so as to be disposed on the front left side of the storage chamber 200 .

23 and 24 , the first front exhaust unit 710 has a first exhaust slit 720 and fourth to sixth exhaust spaces 721a and 721b communicating with the first exhaust slit 720 . , 721c), and fourth to sixth vertical exhaust passages 731a, 731b, 731c (731a, 731b, 731c) communicating with each of the fourth to sixth exhaust spaces 721a, 721b, and 721c are provided.

The first exhaust slit 720 is formed by opening the right side of the first front exhaust part 710 . In this case, the first exhaust slit 720 has a slit shape in which a vertical length is longer than a horizontal length.

The fourth to sixth exhaust spaces 721a , 721b and 721c communicate with the first exhaust slit 720 , and the first front exhaust part 710 to correspond to the first to third purging areas 210 , 220 , 230 . ) is formed inside the Accordingly, the fourth exhaust space 721a, the fifth exhaust space 721b, and the sixth exhaust space 721c are disposed from the lower part of the first front exhaust part 710 to the upper part, and the fourth to sixth exhaust spaces are disposed. Each of the heights 721a, 721b, and 721c is formed to be the same as the height of each of the first to third purging areas 210, 220, and 230.

The fourth to sixth vertical exhaust passages 731a, 731b, 731c) (731a, 731b, 731c) are formed to extend in a vertical direction inside the first front exhaust part 710, and each end has the fourth to sixth ends. It communicates with the exhaust spaces 721a, 721b, and 721c, and each other end communicates with the fourth to sixth exhaust communication holes 816a, 816b, and 816c of the first lower plate 810, respectively. Accordingly, the fourth to sixth vertical exhaust passages 731a, 731b, 731c) (731a, 731b, 731c) remove the external gas exhausted through the fourth to sixth exhaust spaces 721a, 721b, and 721c. 6 It serves as a passage for flowing into the exhaust communication holes (816a, 816b, 816c).

In this case, the other end of each of the fourth to sixth vertical exhaust passages 731a, 731b, 731c, 731a, 731b, 731c may be formed in the form of a hole opened in the lower surface of the first front exhaust part 710, , due to this, it is possible to easily communicate with the fourth to sixth exhaust communication holes 816a, 816b, and 816c.

25 and 26 , the second front exhaust unit 750 has a second exhaust slit 760 and seventh to ninth exhaust spaces 761a and 761b communicating with the second exhaust slit 720 . , 761c) and seventh to ninth vertical exhaust passages 771a, 771b, and 771c (771a, 771b, 771c) communicating with each of the seventh to ninth exhaust spaces 721a, 721b, and 721c are provided.

The second exhaust slit 760 is formed by opening the left side of the second front exhaust part 750 . In this case, the second exhaust slit 760 has a slit shape in which a vertical length is longer than a horizontal length.

The seventh to ninth exhaust spaces 761a , 761b and 761c communicate with the second exhaust slit 760 , and the second front exhaust part 750 to correspond to the first to third purging areas 210 , 220 , 230 . ) is formed inside the Accordingly, the seventh exhaust space 761a, the eighth exhaust space 761b, and the ninth exhaust space 761c are arranged from the lower part of the second front exhaust part 750 to the upper part, and the seventh to ninth exhaust spaces are disposed. Each of the heights 761a, 761b, and 761c is formed to be the same as the height of each of the first to third purging areas 210, 220, and 230.

Seventh to ninth vertical exhaust passages (771a, 771b, 771c) (771a, 771b, 771c) are formed to extend in a vertical direction inside the second front exhaust part 750, and each end has seventh to ninth ends It communicates with the exhaust spaces 761a, 761b, and 761c, and each other end communicates with the seventh to ninth exhaust communication holes 817a, 817b, and 817c of the first lower plate 810, respectively. Accordingly, the seventh to ninth vertical exhaust passages 771a, 771b, and 771c (771a, 771b, 771c) are the seventh to ninth exhaust spaces 761a, 761b, and 761c for external gas exhausted through the seventh to ninth exhaust passages. 9 It serves as a passage for flow to the exhaust communication holes (817a, 817b, 817c).

In this case, the other end of each of the seventh to ninth vertical exhaust passages 771a, 771b, 771c (771a, 771b, 771c) may be formed in the form of a hole opened in the lower surface of the second front exhaust part 750, , due to this, it can be easily communicated with the seventh to ninth exhaust communication holes 817a, 817b, and 817c.

With the above configuration, as shown in FIGS. 9, 14 and 16 , the first front exhaust unit 710 and the second front exhaust unit 750 have a first exhaust slit 720 and a second exhaust slit External gas may be exhausted through 760 .

Therefore, it is possible to prevent the external gas from flowing into the storage chamber 200 through the front opening 251 in advance, thereby causing a kind of turbulence by mixing the external gas with the purge gas sprayed into the storage chamber 200 . formation can be prevented.

In addition, as described above, the first exhaust slit 720 is formed on the right side of the first front exhaust part 710 to open in the right direction from the front of the storage room 200 , and the second exhaust slit 760 is It is formed on the left side of the second front exhaust unit 750 to be opened in the right direction from the front of the storage chamber 200 .

Therefore, the external gas can be easily exhausted in the left and right directions by the first and second front exhaust parts 710 and 750 , and thereby, it is possible to more effectively block the external gas from flowing into the storage chamber 200 . have.

In addition, the first to second front exhaust units 710 and 750 may exhaust not only the external gas but also the purge gas in the first to third purging areas 210 , 220 and 230 .

In other words, as shown in FIG. 16 , the 1-1 to 3-1 injection units 310a, 320a, and 330a and the 1-2 to 3-2 injection units 310b, 320b, and 330b are sprayed. Among the purge gases, the purge gas injected in the forward direction may be exhausted by the first and second front exhaust units 710 and 750 .

As described above, the first and second front exhaust units 710 and 750 include the 1-1 to 3-1 injection units 310a, 320a, and 330a and the 1-2 to 3-2 injection units 310b and 320b. , 330b) by exhausting some of the purge gas injected in the forward direction among the purge gases injected from the first and second supply units 510 and 520, the 1-1 to 3-1 injection units 310a, 320a, 330a ) and the first-2 to 3-2 injection units 310b, 320b, and 330b have the effect of making the flow of the purge gas supplied to the injection units more smooth.

In other words, in the first and second supply units 510 and 520 , the 1-1 to 3-1 injection units 310a, 320a, 330a and the 1-2 to 3-2 injection units 310b, 320b, and 330b The flow of the purge gas supplied to Although a relatively weak flow may be exhibited, as described above, the first and second front exhaust parts 710 and 750 are the 1-1 to 3-1 injection parts 310a, 320a, 330a and 1-2 Since the purge gas injected from the to 3-2 injection units 310b, 320b, and 330b is exhausted, the flow may become more smooth.

Accordingly, due to the organic coupling relationship between the first and second front exhaust units 710 and 750 and the first and second supply units 510 and 520 as described above, the first and second supply units 510 and 520 are relatively moved toward the rear. Even if disposed, the first and second supply units 510 and 520, the 1-1 to 3-1 injection units (310a, 320a, 330a) and the 1-2 to 3-2 injection units (310b, 320b, 330b) ), the flow of the purge gas supplied to it can become smooth.

In addition, according to the suction force of the first and second front exhaust units 710 and 750 , the flow flow of the purge gas flowing in the storage chamber 200 can be adjusted, and thereby, the fume of the wafer W is removed. It is possible to prevent the occurrence of dead areas that cannot be done.

In other words, when the suction power of the first and second front exhaust units 710 and 750 is strong, the purge gas flows from the inside of the storage chamber 200 to the outside of the storage chamber 200, that is, the purge gas flows from the rear to the front. A flow is generated, whereby the purge gas can easily flow over the entire area of the wafer W. Accordingly, fume removal of the entire area of the wafer W can be more easily achieved.

Although it has been described above that the fourth to sixth exhaust spaces 721a, 721b, and 721c communicate with one exhaust slit, that is, the first exhaust slit 720, the fourth to sixth exhaust spaces 721a, 721b, 721c), three slits formed to correspond to each height may be provided. Accordingly, in this case, the first front exhaust unit 710 may more easily achieve selective exhaust of external gases having a height corresponding to each of the first to third purging areas 210 , 220 , and 230 .

Of course, three slits formed to correspond to the respective heights of the seventh to ninth exhaust spaces 761a, 761b, and 761c may be provided. Accordingly, in this case, the second front exhaust unit 750 may more easily achieve selective exhaust of external gases having a height corresponding to each of the first to third purging areas 210 , 220 , and 230 .

lower plate (800)

Hereinafter, the lower plate 800 will be described.

1 to 3 , the lower plate 800 forms the lower surface of the wafer storage container 10 , thereby closing the lower portion of the storage chamber 200 and receiving the purge gas supplied from the outside. It functions to flow into the container (10).

Also, as shown in FIG. 27 , the lower plate 800 may be formed by combining first to third lower plates 810 , 820 , and 830 of the same type.

In this case, the second lower plate 820 is coupled to the lower portion of the first lower plate 810 , and the third lower plate 830 is coupled to the lower portion of the second lower plate 820 .

In addition, a connection member 850 to which an external supply line (not shown) and an external exhaust line (not shown) are connected, and a support member 860 are installed under the third lower plate 830 .

In this case, the support member 860 is installed on the lower surface of the lower plate 800, that is, on the front left and right sides of the lower surface of the third lower plate 830, and when the wafer storage container 10 is placed on the load port, etc., It maintains the level and functions to place it stably.

first lower plate 810

Hereinafter, the first lower plate 810 will be described.

As shown in FIG. 28 , the first lower plate 810 forms the bottom surface of the storage chamber 200 , and the 1-1 to 3-4 supply communication holes 811a to 813d, and the first to third 9 exhaust communication holes (815a, 815b, 815c, 816a, 816b, 816c, 817a, 817b, 817c) are formed through the upper and lower surfaces of the first lower plate 810, respectively,

1-1 to 3-1 supply communication holes (811a, 812a, 813a) and 1-2 to 3-2 supply communication holes (811b, 812b, 813b) are provided on the upper surface of the first lower plate (810). It is formed on the rear left side of the first lower plate 810 so as to correspond to the disposed first supply unit 510 .

1-1 to 3-1 supply communication holes (811a, 812a, 813a) and 1-2 to 3-2 supply communication holes (811b, 812b, 813b) each has one end of the first supply unit (510) The 1-1 to 3-1 supply communication holes 811a, 812a, 813a and 1-2 to 3-2 supply communication holes 811b, 812b, 813b respectively communicate with each other, and the other end of the second lower plate (820) 1-1 to 3-1 supply passages (821a, 822a, 823a) and 1-2 to 3-2 supply passages (821b, 822b, 823b) respectively communicate with each other.

1-3 to 3-3 supply communication holes (811c, 812c, 813c) and 1-4 to 3-4 supply communication holes (811d, 812d, 813d) are on the upper surface of the first lower plate (810) It is formed on the rear right side of the first lower plate 810 so as to correspond to the disposed second supply unit 520 .

1-3 to 3-3 supply communication holes (811c, 812c, 813c) and 1-4 to 3-4 supply communication holes (811d, 812d, 813d) each has one end of the second supply unit (520) 1-3 to 3-3 supply communication holes (811c, 812c, 813c) and 1-4 to 3-4 supply communication holes (811d, 812d, 813d) communicate with each, the other end of the second lower plate The 1-3 to 3-3 supply passages 821c, 822c, and 823c of 820 and the 1-4 to 3-4 supply passages 821d, 822d, and 823d communicate with each other, respectively.

The first to third exhaust communication holes 815a , 815b , and 815c are formed at the rear of the first lower plate 810 to correspond to the exhaust 400 disposed on the upper surface of the first lower plate 810 .

Each of the first to third exhaust communication holes 815a, 815b, and 815c has one end communicating with each of the first to third vertical exhaust passages 411, 421, and 431 of the exhaust unit 400, and the other end of each of the second lower portions It communicates with the first rear discharge hole 825 of the plate 820 .

The fourth to sixth exhaust communication holes 816a, 816b, and 816c are formed on the left front side of the first lower plate 810 so as to correspond to the first front exhaust part 710 disposed on the upper surface of the first lower plate 810 . do.

Each of the fourth to sixth exhaust communication holes 816a, 816b, and 816c has one end in communication with each of the fourth to sixth vertical exhaust passages 731a, 731b, and 731c of the first front exhaust unit 710, and the other end thereof It communicates with each of the fourth to sixth exhaust passages 826a, 826b, and 826c of the second lower plate 820 .

The seventh to ninth exhaust communication holes 817a, 817b, and 817c are formed on the front right side of the first lower plate 810 to correspond to the second front exhaust part 750 disposed on the upper surface of the first lower plate 810 . do.

Each of the seventh to ninth exhaust communication holes 817a, 817b, and 817c has one end communicating with each of the seventh to ninth vertical exhaust passages 771a, 771b, and 771c of the second front exhaust part 750, and the other end thereof It communicates with each of the seventh to ninth exhaust passages 827a, 827b, and 827c of the second lower plate 820 .

second lower plate 820

Hereinafter, the second lower plate 820 will be described.

29, the second lower plate 820 is coupled to the lower portion of the first lower plate 810, the 1-1 to 3-4 supply passages 821a to 823d, and the first rear The discharge hole 825 and the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b, and 827c are formed to pass through the upper and lower surfaces of the second lower plate 820 , respectively.

The 1-1 to 3-2 supply passages 821a to 823b are formed to extend from the rear left side of the second lower plate 820 toward the rear center.

The 1-1 to 3-2 supply passages 821a to 823b have one end communicated with the 1-1 to 3-2 supply communication holes 811a to 813b of the first lower plate 810, respectively, The other end communicates with the 1-1 to 3-2 inflow holes 831a to 833b of the third lower plate 830, respectively.

The 1-3 to 3-4 supply passages 821c to 823d are formed to extend from the rear right side of the second lower plate 820 to the rear center direction.,

The 1-3 to 3-4 supply passages 821c to 823d have one end communicating with the 1-3 to 3-4 supply communication holes 811c to 813d of the first lower plate 810, respectively, The other end communicates with the 1-3 to 3-4 inflow holes 831c to 833d of the third lower plate 830, respectively.

The lengths of the 1-1 to 3-4 supply passages 821a to 823d are shorter than the 1-1 to 1-4 supply passages 821a to 821d. 2-1 to 2-4 supply passages 822a to 822d It is preferable that the 822d) be shorter, and the 3-1 to 3-4 supply passages 823a to 823d are shorter than the 2-1 to 2-4 supply passages 822a to 822d.

As described above, by forming the length of the supply passage for supplying the purge gas to the third injection unit 330 to be shorter than the length of the supply passage for supplying the purge gas to the first injection unit 310 and the second injection unit 320 , , a sufficient amount of purge gas may be injected into the third purging area 230 partitioned at the upper portion of the storage chamber 200 .

By adjusting the length of the supply passage as described above, a sufficient amount of purge gas can be supplied to the injection unit located above, and thus, a uniform amount of the first to third purging regions 210 , 220 , 230 can be supplied. A purge gas may be injected.

The first rear discharge hole 825 is formed in the rear of the second lower plate 820 .

The first rear discharge hole 825 has an upper portion communicating with the first to third exhaust communication holes 815a , 815b and 815c of the first lower plate 810 , and a lower portion of the second lower portion of the third lower plate 830 . It communicates with the rear exhaust hole 490 .

The fourth to sixth exhaust passages 826a, 826b, and 826c are formed to extend from the front left side of the second lower plate 820 to the front center direction.

Each of the fourth to sixth exhaust passages 826a, 826b, and 826c has one end in communication with the fourth to sixth exhaust communication holes 816a, 816b, and 816c of the first lower plate 810, respectively, and the other end thereof is the second end. 3 It communicates with the fourth to sixth discharge holes 836a, 836b, and 836c of the lower plate 830, respectively.

The seventh to ninth exhaust passages 827a , 827b , and 827c are formed to extend from the front right side of the second lower plate 820 to the front center direction.

Each of the seventh to ninth exhaust passages 827a, 827b, and 827c has one end in communication with the seventh to ninth exhaust communication holes 817a, 817b, and 817c of the first lower plate 810, respectively, and the other end of the first lower plate 810, respectively. 3 It communicates with the seventh to ninth discharge holes 837a, 837b, and 837c of the lower plate 830, respectively.

The lengths of the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b, and 827c are greater than the fifth exhaust passage 826b and the eighth exhaust passage 826a and the seventh exhaust passage 827a. It is preferable that the flow path 827b is formed shorter, and the sixth exhaust flow path 826c and the ninth exhaust flow path 827c are shorter than the fifth exhaust flow path 826b and the eighth exhaust flow path 827b.

As described above, the length of the exhaust passage for exhausting the external gas through the sixth exhaust space 721c of the first front exhaust part 710 and the ninth exhaust space 761c of the second front exhaust part 750 is the first The fourth exhaust space 721a, the fifth exhaust space 721b of the front exhaust part 710, and the seventh exhaust space 761a and the eighth exhaust space 761b of the second front exhaust part 750 are provided to the outside. By forming a length shorter than the length of the exhaust passage for exhausting gas, the exhaust resistance of the first and second front exhaust parts 710 and 750 can be made equal.

In detail, the length of the flow path with respect to the first front exhaust part 710 is defined as "the fourth vertical exhaust flow path 731a + the fourth exhaust flow path 826a = the fifth vertical exhaust flow path 731b + the fifth exhaust flow path 731b". When the flow passage 826b = the sixth vertical exhaust passage 731c + the sixth exhaust passage 826c” is formed under the same conditions, the fourth to sixth exhaust spaces 721a and 721b of the first front exhaust part 710, The exhaust resistance of 721c may be formed to be the same, and thus, uniform exhaust to the fourth to sixth exhaust spaces 721a, 721b, and 721c may be achieved.

In addition, the length of the flow path with respect to the second front exhaust part 750 is defined as "seventh vertical exhaust flow path 771a + seventh exhaust flow path 827a = eighth vertical exhaust flow path 771b + eighth exhaust flow path 827b". ) = ninth vertical exhaust passage (771c) + ninth exhaust passage (827c). The exhaust resistance may be formed to be the same, and thus, uniform exhaust to the seventh to ninth exhaust spaces 761a, 761b, and 761c may be achieved.

Third lower plate (830)

Hereinafter, the third lower plate 830 will be described.

30, the third lower plate 830 is coupled to the lower portion of the second lower plate 820, the 1-1 to 3-4 inlet holes (831a to 833d), the second rear The discharge hole 835 and the fourth to ninth discharge holes 836a, 836b, 836c, 837a, 837b, and 837c are respectively formed to penetrate the upper and lower surfaces of the third lower plate 830 .

1-1 to 3-1 inlet holes (831a, 832a, 833a) and 1-2 to 3-2 inlet holes (831b, 832b, 833b) are in the front center of the rear of the third lower plate (830) It is formed to be arranged in a rearward direction.

The 1-3 to 3-3 inflow holes 831c, 832c, 833c and the 1-4 to 3-4 inflow holes 831d, 832d, and 833d are based on the center line of the third lower plate 830. The rear center of the third lower plate 830 so as to be symmetrical with the 1-1 to 3-1 inflow holes 831a, 832a, 833a and the 1-2 to 3-2 inflow holes 831b, 832b, 833b are arranged in an anterior to posterior direction.

Each of the upper portions of the 1-1 to 3-4 inlet holes 831a to 833d communicates with the 1-1 to 3-4 supply passages 821a to 823d of the second lower plate 820 .

The 1-1 and 1-3 inflow holes 831a and 831c communicate with the 1-1 main inflow hole 851a of the connecting member 850, and the 2-1 and 2-3 inflow holes 832a and 832c. ) communicates with the 2-1 main inlet hole 852a of the connecting member 850, and the 3-1 and 3-3 inlet holes 833a and 833c are the 3-1 main inflow holes of the connecting member 850. It communicates with the hole 853a.

The 1-2, 1-4 inflow holes 831b and 831d communicate with the 1-2 main inflow hole 851b of the connecting member 850, and the 2-2, 2-4 inflow holes 832b and 832d ) communicates with the 2-2 main inlet hole 852b of the connecting member 850, and the 3-2 and 3-4 inlet holes 833b and 833d are the 3-2 main inflow holes of the connecting member 850. It communicates with the hole 853b.

The second rear discharge hole 835 is the upper surface and the lower surface of the second lower plate 820 at the rear of the third lower plate 830 so as to communicate with the first rear discharge hole 825 of the second lower plate 820 . formed through

One end of the second rear discharge hole 835 communicates with the first rear discharge hole 825 , and the other end communicates with the integrated discharge passage 855 of the connecting member 850 .

The fourth to ninth discharge holes 836a, 836b, 836c, 837a, 837b, and 837c are located in front of the 1-1 to 3-4 inlet holes 831a to 833d of the second lower plate 820. It is formed through the upper and lower surfaces of the second lower plate 820 in the center.

One end of each of the fourth to ninth discharge holes 836a, 836b, 836c, 837a, 837b, and 837c has the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b of the second lower plate 820, 827c), and each other end communicates with the integrated discharge passage 855 of the connecting member 850 .

As described above, by forming supply/exhaust communication holes and supply/exhaust flow paths in the first to third lower plates 810, 820, and 830, respectively, the flow path shape inside the lower plate 800 forms a complex shape However, it can be easily formed.

In addition, when the wafer receiving container 10 is coupled to a load port and connected to an external supply/exhaust line, the supply/exhaust communication holes of the first to third lower plates 810, 820, and 830 as above, supply/exhaust flow paths By properly forming the etc., the supply lines to which the purge gas is supplied and the exhaust line for evacuating the purge gas and fume can be simplified.

connecting member (850)

Hereinafter, the connection member 850 will be described.

As shown in FIG. 27 , the connection member 850 is installed under the lower plate 800 , that is, under the third lower plate 830 .

The connecting member 850 functions to connect the 1-1 to 3-2 external supply lines (not shown) and an external exhaust line (not shown) to the wafer receiving container 10 .

31 , 1-1 to 3-2 main inlet holes 851a to 853b, an integrated discharge passage 855 and a main exhaust hole 490 are formed in the connection member 850 .

The 1-1 main inlet hole 851a communicates with the 1-1 and 1-3 inlet holes 831a and 831c of the third lower plate 830, and the 2-1 main inlet hole 852a is 3 communicates with the 2-1, 2-3 inlet holes 832a, 832c of the lower plate 830, and the 3-1 main inlet hole 853a is the 3-1, 3-3 communicates with the inlet holes 833a and 833c.

The 1-2 main inlet hole 851b communicates with the 1-2 first and 1-4 inlet holes 831b and 831d of the third lower plate 830, and the 2-2 main inlet hole 852b is the second main inlet hole 852b. 3 communicates with the 2-2, 2-4 inlet holes 832b and 832d of the lower plate 830, and the 3-2 main inlet hole 853b is the 3-2, It communicates with 3-4 inlet holes 833b and 833d.

The 1-1 to 3-2 main inlet holes 851a to 853b are respectively connected to the 1-1 to 3-2 external supply lines.

Accordingly, as the 1-1 to 3-2 external supply lines, that is, the six external supply lines are individually controlled, 6 injections communicating with the 1-1 to 3-2 main inlet holes 851a to 853b The additional first to third purging regions 210 , 220 , and 230 may be individually sprayed with a purge gas, and a detailed description thereof will be described later.

The integrated discharge flow path 855 includes the second rear discharge hole 835 and the fourth to ninth discharge holes 836a, 836b, 836c, 837a, 837b, 837c and the main exhaust hole 490 of the second lower plate 820 . ) as a flow path to connect them.

An external exhaust line is connected to the main exhaust hole 490 , so that the purge gas exhausted through the integrated exhaust passage 855 , the fume of the wafer W, external gas, etc. are easily discharged to the outside of the wafer storage container 10 . can be emitted.

top plate (900)

1 to 3 , the upper plate 900 forms the upper surface of the wafer storage container 10 and functions to close the upper portion of the storage chamber 200 .

In this case, the lower surface of the upper plate 900 is coupled to the upper surface of the fourth horizontal member 114 , the upper surface of the eighth horizontal member 118 , and the upper surface of the exhaust unit 400 .

The overall shape of the upper plate 900 has the same shape as the overall shape of the lower plate 800 .

A wafer detection sensor (not shown) may be provided on a lower surface of the upper plate 900 .

The wafer detection sensor may detect whether the wafer W is accommodated and whether the wafer W is supported on which support 600 among the plurality of supports 600 .

Purge gas supply/injection flow in the wafer storage container (10)

Hereinafter, a purge gas supply/injection flow of the wafer storage container 10 according to a preferred embodiment of the present invention will be described.

33, the purge gas supply/injection flow of the wafer storage container 10 according to the preferred embodiment of the present invention is the first to third connected to the 1-1 to 3-2 main inlet holes 851a and 853b. 1-1 to 3-2 are made by an external supply line.

The 1-1 external supply line supplies the purge gas to the 1-1 injection unit 310a and the 1-3 injection unit 310c, and the 1-2 external supply line is the 1-2 injection unit ( 310b) and a purge gas are supplied to the 1-4 injection units 310d. Accordingly, the purge gas is supplied to each of the 1-1 to 1-4 injection parts 310a to 310d by the 1-1 external supply line and the 1-2 external supply line, and the purge gas thus supplied is The first purging area 210 is partitioned in the storage chamber 200 by being sprayed from the 1-1 to 1-4 injection units 310a to 310d into the storage chamber 200 .

The 2-1 external supply line supplies the purge gas to the 2-1 injection unit 320a and the 2-3 injection unit 320c, and the 2-2 external supply line is the 2-2 injection unit ( 320b) and the purge gas are supplied to the 2-4 injection unit 320d. Accordingly, the purge gas is supplied to each of the 2-1 to 2-4 injection parts 320a to 320d by the 2-1 external supply line and the 2-2 external supply line, and the purge gas thus supplied is The second purging area 220 is partitioned in the storage chamber 200 by being sprayed into the storage chamber 200 from the 2-1 to 2-4 injection units 320a to 320d.

The 3-1 external supply line supplies the purge gas to the 3-1 injection unit 330a and the 3-3 injection unit 330c, and the 3-2 external supply line is the 3-2 injection unit ( 330b) and a purge gas are supplied to the third and fourth injection units 330d. Accordingly, the purge gas is supplied to each of the 3-1 to 3-4 injection parts 330a to 330d by the 3-1 external supply line and the 3-2 external supply line, and the purge gas thus supplied is The third purging area 230 is partitioned in the storage chamber 200 by being sprayed into the storage chamber 200 from the 3-1 to 3-4 injection units 330a to 330d.

Hereinafter, the supply/injection flow of the purge gas to each of the first to third purging regions 210 , 220 , and 230 by the 1-1 to 3-2 external supply lines will be described in detail.

Part 1- 1 outside supply line and 1- 2 outside Purge gas supply/injection flow by supply line

Hereinafter, with reference to FIGS. 4, 7, 12, 16, 32 and 33, a purge gas composed of a first purging region 210 by a 1-1 external supply line and a 1-2 external supply line. The feed/injection flow is described.

When the purge gas is supplied from the 1-1 external supply line, the purge gas is supplied to the 1-1 supply passage 821a and the 1-3 th The flow is divided into a supply passage (821c).

The purge gas flowing through the 1-1 supply passage 821a flows into the 1-1 supply communication hole 811a and flows into the 1-1 vertical supply passage 541a of the first supply unit 510 . The purge gas flowing into the 1-1 vertical supply passage 541a is supplied into the 1-1 injection part 310a through the 1-1 supply space 531a and the 1-1 supply hole 371a. . In this way, the purge gas supplied into the 1-1 injection unit 310a is injected to the left side of the first purging area 210 through the injection hole 390 .

The purge gas flowing through the 1-3 supply passage 821c flows into the 1-3 supply communication hole 811c and flows into the 1-3 vertical supply passage 541c of the second supply unit 520 . The purge gas flowing into the 1-3 vertical supply passage 541c is supplied into the 1-3 injection unit 310c through the 1-3 supply space 531c and the 1-3 supply hole 371c. . In this way, the purge gas supplied into the 1-3 injection unit 310c is injected to the right side of the first purging area 210 through the injection hole 390 .

When the purge gas is supplied from the 1-2 th external supply line, the purge gas is supplied to the 1-2 supply passage 821b and the 1-4 th supply passage 821b through the 1-2 main inlet hole 851b of the connecting member 850 . The flow is divided into the supply passage (821d).

The purge gas flowing through the 1-2 supply passage 821b flows into the 1-2 supply communication hole 811b and flows into the 1-2 vertical supply passage 541b of the first supply unit 510 . The purge gas flowing into the 1-2 vertical supply passage 541b is supplied into the 1-2 injection unit 310b through the 1-2 supply space 531b and the 1-2 supply hole 371b. . In this way, the purge gas supplied to the inside of the 1-2 injection part 310b is injected to the rear left side of the first purging area 210 through the injection hole 390 .

The purge gas flowing through the 1-4 supply passage 821d flows through the 1-4 supply communication hole 811d and flows into the 1-4 vertical supply passage 541d of the second supply unit 520 . The purge gas flowing into the 1-4 vertical supply passage 541d is supplied to the inside of the 1-4 injection unit 310d through the 1-4 supply space 531d and the 1-4 supply hole 371d. . In this way, the purge gas supplied to the inside of the 1-4 injection unit 310d is injected to the rear right side of the first purging area 210 through the injection hole 390 .

Part 2- 1 outside supply line and second- 2 outside Purge gas supply/injection flow by supply line

Hereinafter, with reference to FIGS. 4, 7, 12, 16, 32 and 33, a purge gas composed of a second purging region 220 by a 2-1 external supply line and a 2-2 external supply line. The feed/injection flow is described.

When the purge gas is supplied from the 2-1 external supply line, the purge gas is supplied through the 2-1 main inlet hole 852a of the connecting member 850 through the 2-1 supply passage 822a and the 2-3 The flow is divided into a supply passage (822c).

The purge gas flowing through the 2-1 supply passage 822a flows into the 2-1 supply communication hole 812a and flows into the 2-1 vertical supply passage 542a of the first supply unit 510 . The purge gas flowing into the 2-1 vertical supply passage 542a is supplied into the 2-1 injection unit 320a through the 2-1 supply space 532a and the 2-1 supply hole 372a. . In this way, the purge gas supplied into the second-first injection unit 320a is injected to the right side of the second purging region 220 through the injection hole 390 .

The purge gas flowing through the 2-3rd supply passage 822c flows into the 2-3rd supply communication hole 812c and flows into the 2-3rd vertical supply passage 542c of the second supply unit 520 . The purge gas flowing into the 2-3rd vertical supply passage 542c is supplied into the 2-3rd injection part 320c through the 2-3rd supply space 532c and the 2-3th supply hole 372c. . In this way, the purge gas supplied to the inside of the 2-3 injection part 320c is injected to the right side of the second purging area 220 through the injection hole 390 .

When the purge gas is supplied from the 2-2 external supply line, the purge gas is supplied to the 2-2 supply passage 822b and the 2-4th supply passage 822b through the 2-2 main inlet hole 852b of the connection member 850 The flow is divided into the supply passage (822d).

The purge gas flowing into the 2-2 supply passage 822b flows into the 2-2 supply communication hole 812b and flows into the 2-2 vertical supply passage 542b of the first supply unit 510 . The purge gas flowing into the 2-2 vertical supply passage 542b is supplied into the 2-2 injection unit 320b through the 2-2 supply space 532b and the 2-2 supply hole 372b. . In this way, the purge gas supplied into the second-second injection unit 320b is injected to the rear left side of the second purging region 220 through the injection hole 390 .

The purge gas flowing through the 2-4th supply passage 822d flows into the 2-4th supply communication hole 812d and flows into the 2-4th vertical supply passage 542d of the second supply unit 520 . The purge gas flowing into the 2-4 vertical supply passage 542d is supplied to the inside of the 2-4 injection unit 320d through the 2-4 supply space 532d and the 2-4 supply hole 372d. . In this way, the purge gas supplied into the 2-4 injection unit 320d is injected to the rear right side of the second purging area 220 through the injection hole 390 .

Part 3- 1 outside Supply line and Section 3- 2 outside Purge gas supply/injection flow by supply line

Hereinafter, with reference to FIGS. 4, 7, 12, 16, 32 and 33, a purge gas composed of a third purging region 230 by a 3-1 external supply line and a 3-2 external supply line. The feed/injection flow is described.

When the purge gas is supplied from the 3-1 external supply line, the purge gas is supplied to the 3-1 supply passage 823a and the 3-3 The flow is divided into a supply passage (823c).

The purge gas flowing through the 3-1 supply passage 823a flows into the 3-1 supply communication hole 813a and flows into the 3-1 vertical supply passage 543a of the first supply unit 510 . The purge gas flowing into the 3-1 vertical supply passage 543a is supplied into the 3-1 injection unit 330a through the 3-1 supply space 533a and the 3-1 supply hole 373a. . In this way, the purge gas supplied into the 3-1 injection unit 330a is injected to the right side of the third purging area 230 through the injection hole 390 .

The purge gas flowing into the 3-3 supply passage 823c flows into the 3-3 supply communication hole 813c and flows into the 3-3 vertical supply passage 543c of the second supply unit 520 . The purge gas flowing into the 3-3 vertical supply passage 543c is supplied into the 3-3 injection unit 330c through the 3-3 supply space 533c and the 3-3 supply hole 373c. . In this way, the purge gas supplied into the 3 - 3 injection unit 330c is injected to the right side of the third purging area 230 through the injection hole 390 .

When the purge gas is supplied from the 3-2 external supply line, the purge gas is supplied to the 3-2 supply passage 823b and the 3-4 The flow is divided into the supply passage (823d).

The purge gas flowing into the 3-2 supply passage 823b flows into the 3-2 supply communication hole 813b and flows into the 3-2 vertical supply passage 543b of the first supply unit 510 . The purge gas flowing into the 3-2 vertical supply passage 543b is supplied into the 3-2 injection unit 330b through the 3-2 supply space 533b and the 3-2 supply hole 373b. . In this way, the purge gas supplied into the 3-2 injection unit 330b is injected to the rear left side of the third purging area 230 through the injection hole 390 .

The purge gas flowing through the 3-4th supply passage 823d flows into the 3-4th supply communication hole 813d and flows into the 3-4th vertical supply passage 543d of the second supply unit 520 . The purge gas flowing into the 3-4th vertical supply passage 543d is supplied into the 3-4th injection part 330d through the 3-4th supply space 533d and the 3-4th supply hole 373d. . In this way, the purge gas supplied to the inside of the third and fourth injection units 330d is injected to the rear right side of the third purging region 230 through the injection hole 390 .

As described above, the wafer storage container 10 according to a preferred embodiment of the present invention has the 1-1 and 1-3 injection units 310a and 310c, and the 1-2 and 1-4 injection units 310b and 310d. ), 2-1, 2-3 injection units (320a, 320c), 2-2, 2-4 injection units (320b, 320d), 3-1, 3-3 injection units (330a, 330c) and The 3-2, 3-4 injection units 330b and 330d are individually supplied with purge gas through the 1-1 to 3-2 external supply lines, respectively, and the first to third purging regions 210 and 220 , 230) can achieve purge gas injection.

Accordingly, by controlling the supply of the purge gas to the 1-1 to 3-2 external supply lines, the purge gas may be selectively sprayed only to a desired region among the first to third purging regions 210 , 220 , and 230 .

For example, when the robot arm accommodates and supports the wafer W only on the support 600 located in the second purging area 220, the purging is performed in the 2-1 external supply line and/or the 2-2 external supply line. By supplying the gas so that the purge gas is injected only into the second purging region 220 , purging of the wafer W positioned in the second purging region 220 can be achieved. Therefore, unlike the prior art, unnecessary waste of purge gas can be reduced.

In addition, it is possible to ensure a uniform purging of the wafer (W) accommodated in the storage chamber (200).

For example, when an MFC (Mass Flow Controller) is provided in each of the 1-1 to 3-2 external supply lines, the pressure of the purge gas supplied to the 3-1 and 3-2 external supply lines using the MFC is increased, the pressure of the purge gas injected into the third purging region 230 from the inside of the 3-1 to 3-4 injection parts 330a to 330d through the injection hole 390 also increases. Therefore, unlike the prior art, a sufficient amount of purge gas may also be injected into the third purging region 230 located at the upper portion inside the storage chamber 200, and in this way, the outside of the 1-1 to 3-2 By setting the supply pressure of the purge gas supplied from the supply line differently, it is possible to achieve uniform purging of the wafer W accommodated in the storage chamber 200 .

Exhaust flow of purge gas, fume and external gas in the wafer storage container 10

Hereinafter, the exhaust flow of the purge gas of the wafer storage container 10, the fume of the wafer W, and the external gas according to a preferred embodiment of the present invention will be described.

34, the exhaust flow of the purge gas of the wafer storage container 10, the fume of the wafer W, and the external gas according to the preferred embodiment of the present invention is an external exhaust line connected to the main exhaust hole 857. (not shown) is done by

The exhaust unit 400 includes the purge gas and the fume of the wafer W injected into the first to third purging regions 210 , 220 , 230 by the 1-1 to 3-2 injection units 310a to 330d. and the first and second front exhaust units 710 and 750 function to exhaust external gas outside the wafer storage container 10 .

Hereinafter, the exhaust flow of the exhaust unit 400 and the first and second front exhaust units 710 and 750 will be described in detail.

to the exhaust unit 400 purge gas and fume exhaust flow

Hereinafter, with reference to FIGS. 9, 14, 16, 32 and 34 , the purge gas of the first to third purging regions 210 , 220 , 230 and the fume of the wafer W by the exhaust unit 400 . This exhausted exhaust flow will be described.

When a suction force is generated in the external exhaust line by a suction fan or the like, the purge gas in the first purging area 210 and the fume of the wafer W flow into the first exhaust space 410 through the exhaust hole 490 . . The purge gas flowing into the first exhaust space 410 and the fume of the wafer W flow through the first vertical exhaust passage 411 to the first exhaust communication hole 815a, and the first rear exhaust hole 825 ), and flows into the integrated discharge passage 855 through the second rear discharge hole 835 . The purge gas and the fume of the wafer W that have flowed into the integrated discharge passage 855 in this way flow into the main exhaust hole 857 and are then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

When a suction force is generated in the external exhaust line by a suction fan or the like, the purge gas in the second purging area 220 and the fume of the wafer W flow into the second exhaust space 420 through the exhaust hole 490 . . The purge gas flowing into the second exhaust space 420 and the fume of the wafer W flow through the second vertical exhaust passage 421 to the second exhaust communication hole 815b, and the first rear exhaust hole 825 ), and flows into the integrated discharge passage 855 through the second rear discharge hole 835 . The purge gas and the fume of the wafer W that have flowed into the integrated discharge passage 855 in this way flow into the main exhaust hole 857 and are then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

When a suction force is generated in the external exhaust line by a suction fan or the like, the purge gas in the third purging area 230 and the fume of the wafer W flow into the third exhaust space 430 through the exhaust hole 490 . . The purge gas flowing into the third exhaust space 430 and the fume of the wafer W flow through the third vertical exhaust passage 431 to the second exhaust communication hole 815c, and the first rear exhaust hole 825 ), and flows into the integrated discharge passage 855 through the second rear discharge hole 835 . The purge gas and the fume of the wafer W that have flowed into the integrated discharge passage 855 in this way flow into the main exhaust hole 857 and are then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

As described above, the purge gas exhausted through the exhaust unit 400 and the fume of the wafer W are exhausted through each exhaust passage, that is, three exhaust passages, and then discharged through the first rear side of the second lower plate 820 . The holes 825 are gathered together to be exhausted.

This is to easily exhaust the purge gas and the fume of the wafer W through the suction force of one external exhaust line. Therefore, in order to selectively exhaust the purge gas of the first to third purging regions 210 , 220 , and 230 and the fume of the wafer W, the first to third vertical exhaust passages 411 , 42 and 431 have A valve is preferably provided.

In other words, a valve such as a solenoid valve may be provided in each of the first to third vertical exhaust passages 411, 42, and 431, and by controlling the solenoid valve, the first to third purging areas 210, 220, The selective exhaust of the purge gas of 230 and the fume of the wafer W can be easily achieved. Accordingly, when the purge gas is selectively injected from the 1-1 to 3-2 injection units 310a to 330d to the first to third purging regions 210 , 220 and 230 , the first to third purging regions The purge gas and the fume of the wafer W may be exhausted only to the purging region where the purge gas is injected among the 210 , 220 , and 230 .

As described above, by selectively performing the purge gas injection into the first to third purging regions 210 , 220 , and 230 and controlling the exhaust of the purge gas and fume, the above-described uniform purging of the wafer W is further improved. It can be guaranteed excellently, and the waste of unnecessary purge gas can also be significantly reduced.

In addition, unlike the above-described embodiment, the exhaust unit 400 may function to inject a purge gas by being connected to an external supply line. In this case, the first to third purging regions 210 , 220 , 230 . It is possible to selectively inject a purge gas to each rear of the.

1st front exhaust Exhaust flow of external gas by (710, 750)

Hereinafter, the exhaust flow of the external gas exhausted by the first and second front exhaust units 710 and 750 will be described with reference to FIGS. 9, 14, 16, 32 and 34 .

When a suction force is generated in the external exhaust line by a suction fan or the like, external gases outside the front left side of the wafer storage container 10 pass through the first exhaust slit 720 of the first front exhaust unit 710 to the fourth to sixth It flows into the exhaust space (721a, 721b, 721c).

The external gas flowing into the fourth exhaust space 721a flows to the fourth exhaust communication hole 816a through the fourth vertical exhaust passage 731a, and the fourth exhaust passage 826a and the fourth exhaust hole 836a ) to flow into the integrated discharge passage 855 . The external gas flowing through the integrated discharge passage 855 in this way flows into the main exhaust hole 857 and then is exhausted to the outside of the wafer storage container 10 through the external exhaust line.

The external gas flowing into the fifth exhaust space 721b flows to the fifth exhaust communication hole 816b through the fifth vertical exhaust passage 731b, and the fifth exhaust passage 826b and the fifth exhaust hole 836b. ) to flow into the integrated discharge passage 855 . The external gas flowing through the integrated discharge passage 855 in this way flows into the main exhaust hole 857 and then is exhausted to the outside of the wafer storage container 10 through the external exhaust line.

The external gas flowing into the sixth exhaust space 721c flows to the sixth exhaust communication hole 816c through the sixth vertical exhaust passage 731c, and the fifth exhaust passage 826c and the fifth exhaust hole 836c. ) to flow into the integrated discharge passage 855 . The external gas flowing through the integrated discharge passage 855 in this way flows into the main exhaust hole 857 and then is exhausted to the outside of the wafer storage container 10 through the external exhaust line.

When a suction force is generated in the external exhaust line by a suction fan or the like, external gases outside the front right side of the wafer storage container 10 pass through the second exhaust slit 760 of the second front exhaust part 750 to the seventh to ninth It flows into the exhaust space (761a, 761b, 761c).

The external gas flowing into the seventh exhaust space 761a flows to the seventh exhaust communication hole 817a through the seventh vertical exhaust passage 771a, and the seventh exhaust passage 827a and the seventh exhaust hole 837a ) to flow into the integrated discharge passage 855 . The external gas flowing through the integrated discharge passage 855 in this way flows into the main exhaust hole 857 and then is exhausted to the outside of the wafer storage container 10 through the external exhaust line.

The external gas flowing into the eighth exhaust space 761b flows to the eighth exhaust communication hole 817b through the eighth vertical exhaust passage 771b, and the eighth exhaust passage 827b and the eighth exhaust hole 837b. ) to flow into the integrated discharge passage 855 . The external gas flowing through the integrated discharge passage 855 in this way flows into the main exhaust hole 857 and then is exhausted to the outside of the wafer storage container 10 through the external exhaust line.

The external gas flowing into the ninth exhaust space 761c flows to the ninth exhaust communication hole 817c through the ninth vertical exhaust passage 771c, and the ninth exhaust passage 827c and the ninth exhaust hole 837c. ) to flow into the integrated discharge passage 855 . The external gas flowing through the integrated exhaust passage 855 in this way flows into the main exhaust hole 857 and then is exhausted to the outside of the wafer storage container 10 through the external exhaust line.

As described above, the first and second front exhaust units 710 and 750 exhaust the external gas outside the front left and right sides of the wafer storage container 10, respectively, and thus flow into the storage chamber 200 through the front opening 251. By blocking the external gas used in advance, it is possible to prevent the purging of the wafer W made in the first to third purging areas 210 , 220 , and 230 from being disturbed.

As described above, the external gas exhausted through the first and second front exhaust portions 710 and 750 is exhausted through each exhaust passage, that is, six exhaust passages, and then is exhausted through the integrated exhaust passage 855 of the connecting member 850 . ) is collected and exhausted.

This is to easily exhaust the external gas through the suction force of one external exhaust line. Accordingly, in order to selectively exhaust external gas at a height corresponding to the first to third purging regions 210 , 220 , 230 , the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b, and 827c ) is preferably provided with a valve.

In other words, a valve such as a solenoid valve may be provided in each of the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b, and 827c, and by controlling the solenoid valve, the first to third purging areas Selective exhaust for external gas at a height corresponding to (210, 220, 230) can be easily achieved.

Therefore, as described above, when the purge gas is selectively injected and exhausted to any one of the first to third purging areas 210 , 220 , and 230 , the outside of the area corresponding to the height of the purging area It is possible to selectively exhaust only the gas, and thus, it is possible to block in advance the inflow of the external gas into the purging area where the purging is performed.

In addition, unlike the above-described embodiment, the first and second front exhaust units 710 and 750 may function to inject a purge gas by being connected to an external supply line. The purge gas is sprayed on the left and right sides of the front.

In this way, spraying the purge gas through the first and second front exhaust parts 710 and 750 is a case in which the external gas outside the wafer storage container 10 is heavily contaminated (eg, fume, etc. outside the wafer storage container 10 ). In the case of remaining), a purge gas is injected to prevent fumes from remaining in other semiconductor processing equipment located outside the wafer storage container 10 and at the same time, the contaminated external gas is introduced into the storage chamber 200 . can block it

As described above, although described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify the present invention within the scope without departing from the spirit and scope of the present invention as set forth in the following claims. Or it can be carried out by modification.

10: wafer storage container
111 to 118: first to eighth horizontal members
121 to 126: first to sixth vertical members
200: storage room 210: first purging area
220: second purging area 230: third purging area
251: front opening
310: first injection unit 310a ~ 310d: 1-1 to 1-4 injection unit
320: second injection unit 320a ~ 320d: 2-1 to 2-4 injection unit
330: third injection unit 330a ~ 330d: 3-1 to 3-4 injection unit
340: first injection part inner wall surface 345: first support coupling part
350: second injection part inner wall surface 355: second support coupling part
361: first injection unit outer wall surface 362: second injection unit outer wall surface
371a to 371d: 1-1 to 1-4 supply holes
372a to 372d: 2-1 to 2-4 supply holes
373a ~ 373d: 3-1 to 3-4 supply hole
390: injection hole
400: exhaust unit 410: first exhaust space
411: first vertical exhaust passage 420: second exhaust space
421: second vertical exhaust passage 430: third exhaust space
431: third vertical exhaust passage 440: exhaust portion inner wall surface
490: exhaust hole
510: first supply unit 520: second supply unit
531a ~ 531d: 1-1 to 1-4 supply space
532a ~ 532d: 2-1 to 2-4 supply space
533a ~ 533d: 3-1 to 3-4 supply space
541a to 541d: 1-1 to 1-4 vertical supply passages
542a to 542d: 2-1 to 2-4 vertical supply passages
543a to 543d: 3-1 to 3-4 vertical supply passages
600: support 610: rear support
611: rear arc portion 612: rear protrusion
620: left support part 621: left arc part
622: left protrusion 630: right support
631: right arc part 632: right protruding part
640: left inclined portion 650: right inclined portion
660: left concave portion 670: right concave portion
710: first front exhaust unit 720: first exhaust slit
721a to 721c: fourth to sixth exhaust spaces
731a to 731c: fourth to sixth vertical exhaust passages
750: second front exhaust unit 760: second exhaust slit
761a to 761c: seventh to ninth exhaust spaces
771a to 771c: seventh to ninth vertical exhaust passages
800: lower plate 810: first lower plate
811a to 811d: 1-1 to 1-4 supply communication holes
812a to 812d: 2-1 to 2-4 supply communication holes
813a ~ 813d: 3-1 to 3-4 supply communication hole
815a ~ 815c: first to third exhaust communication holes
816a ~ 816c: fourth to sixth exhaust communication holes
817a to 817c: seventh to ninth exhaust communication holes
820: second lower plate
821a to 821d: 1-1 to 1-4 supply passages
822a ~ 822d: 2-1 to 2-4 supply passages
823a ~ 823d: 3-1 to 3-4 supply passages
825: first rear exhaust hole
826a to 826c: fourth to sixth exhaust passages
827a ~ 827c: 7th to 9th exhaust passages
830: third lower plate
831a ~ 831d: 1-1 to 1-4 inlet holes
832a ~ 832d: 2-1 to 2-4 inlet hole
833a ~ 833d: 3-1 to 3-4 inlet hole
835: second rear exhaust hole
836a ~ 836c: fourth to sixth discharge holes
837a ~ 837c: 7th to 9th discharge holes
850: connection member 851a: 1-1 main inlet hole
851b: 2-1 main inlet hole 852a: 2-1 main inlet hole
852b: 2-2 main inlet hole 853a: 3-1 main inlet hole
853b: 3-2 main inlet hole 855: integrated discharge path
857: main exhaust hole 860: support member
900: top plate W: wafer

Claims (6)

a storage chamber in which the wafer received through the front opening is accommodated;
a plurality of injection units for injecting a purge gas into the storage chamber; and
Including; an exhaust for exhausting the purge gas and fume of the storage room;
The storage room can be partitioned into a plurality of purging areas in the vertical direction,
The plurality of spraying units are disposed in a vertical direction to correspond to each of the plurality of purging areas partitioned in the vertical direction,
Each of the plurality of injection units injects a purge gas for each purging area partitioned in the vertical direction,
The exhaust unit includes a plurality of exhaust spaces, wherein the plurality of exhaust spaces are disposed to correspond to each of the plurality of purging areas partitioned in the vertical direction. According to claim 1,
Each of the plurality of injection units has an inner wall surface of the injection unit in contact with the storage chamber, and an injection hole through which the purge gas is injected into the storage chamber is formed on the inner wall surface of the injection unit. delete According to claim 1,
It further includes; a supply unit for supplying a purge gas to the plurality of injection units,
The supply unit includes a plurality of vertical supply passages extending in a vertical direction, and the plurality of vertical supply passages are in communication with the plurality of injection units, respectively. According to claim 1,
The exhaust portion has an inner wall surface of the exhaust portion in contact with the storage chamber, and an exhaust hole is formed on the inner wall surface of the exhaust portion to exhaust the purge gas and fumes of the storage chamber to the exhaust portion. delete

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