KR20230039629A - Wafer storage container - Google Patents

Abstract

The present invention relates to a wafer storage container. In particular, by partitioning a plurality of purging areas in a vertical direction inside the storage room and injecting a purge gas into the plurality of purging areas, uniform purging of a wafer can be ensured, and efficient wafer purging can be achieved without wasting a purge gas.

Description

Wafer storage container {WAFER STORAGE CONTAINER}

The present invention relates to a wafer storage container, and relates to a wafer storage container for removing fume from wafers stored in a storage chamber by supplying a purge gas thereto.

In general, a semiconductor device is manufactured by selectively and repeatedly performing a deposition process, a polishing process, a photolithography process, an etching process, an ion implantation process, a cleaning process, an inspection process, and a heat treatment process on a wafer. For this purpose, the wafer is transported to a specific location required in each process.

Wafers, as high-precision items, are stored or transported in wafer storage containers such as Front Opening Unifie Pods (FOUPs) to prevent contamination or damage from external contaminants and shocks.

In this case, the process gas used in the process and the fume, which is a by-product of the process, remain on the wafer surface without being removed. As a result, contamination of semiconductor manufacturing equipment occurs during the process, or the etching pattern of the wafer (etch There is a problem in that the reliability of the wafer is lowered due to occurrence of pattern defects and the like.

Recently, in order to solve this problem, purging technologies have been developed to remove fume remaining on the surface of the wafer by supplying a purge gas to the wafer stored in the wafer storage container or to prevent oxidation of the wafer.

In order to achieve purging of the wafers stored in the wafer storage container, the wafer storage container is combined with a supply device capable of supplying purge gas, such as a load port, and supplies purge gas to the wafers stored in the wafer storage container. will do Accordingly, the wafer storage container is provided with a flow path through which the purge gas supplied from the supply device flows and an injection hole through which the purge gas is sprayed.

As described above, as a wafer storage container capable of supplying a purge gas, the one described in Korean Patent Publication No. 2015-0087015 (hereinafter referred to as 'prior art') is known.

A wafer cassette of the prior art includes a plurality of loading stands for supporting wafers and injecting purge gas into a storage chamber, and intake holes communicating with an exhaust unit to exhaust purge gas and fume from the wafer cassette.

In addition, a plurality of loading platforms are provided with purge gas passages through which purge gas flows, and purge gas outlets communicating with the purge gas passages. Therefore, the purge gas is supplied from the purge gas supply source, introduced into the loading table through the side gas pipe communicating with the purge gas flow path, and then injected into the storage room through the purge gas outlet.

However, in the prior art wafer cassette, since one side gas pipe communicates with the purge gas passages provided on the plurality of loading tables, it is impossible to individually control the purge gas injected from each of the plurality of loading tables. Therefore, even when wafers are stored in only a part of the storage room (for example, when wafers are loaded only on a loading table disposed at the bottom of the storage room), the purge gas can be sprayed to the central area and the upper area where wafers are not stored. There is no choice but to, and due to this, there is a problem that unnecessary waste of purge gas may occur.

Korean Patent Publication No. 2015-0087015

The present invention has been made to solve the above problems, and an object of the present invention is to provide a wafer storage container that can guarantee uniform purging of wafers and minimize waste of purge gas.

In addition, another object of the present invention is to individually control and spray the purge gas injected into a plurality of purging regions partitioned in the vertical direction of the storage chamber, thereby providing a wafer storage container capable of achieving independent purging of wafers aims to

In addition, another object of the present invention is to provide a concave portion to a plurality of supports provided in a vertical direction in a storage room to prevent interference with a robot arm that transfers the wafers when wafers enter and exit the storage room through a front opening. It is an object of the present invention to provide a storage container.

In addition, another object of the present invention is to minimize the vertical flow of the purge gas injected into the storage room by minimizing the space formed between the support and the wafer when the wafer is supported on the support, thereby minimizing the plurality of purging areas partitioned in the storage room. It is an object of the present invention to provide a wafer storage container capable of more efficiently spraying individual purge gases into the wafer.

In addition, another object of the present invention is to provide wafer storage capable of more efficiently purging wafers in the storage compartment by providing front exhaust units on both sides of the front of the storage compartment to block the inflow of external gas into the storage compartment. It aims to provide courage.

A wafer storage container according to one feature of the present invention includes a storage compartment in which wafers stored through a front opening are stored; a lower plate forming a lower surface of the storage chamber and through which purge gas flows; a spraying unit that surrounds at least a portion of the circumference of the storage compartment and injects purge gas into the storage compartment through spraying holes formed on an inner wall surface of the spraying unit; and a supply unit disposed outside the injection unit and supplying the purge gas introduced through the lower plate to the injection unit by communicating the lower plate and the injection unit.

In addition, the supply unit is in communication with the supply passage of the lower plate, the vertical supply passage is formed to extend in the vertical direction; and a supply space communicating with the vertical supply passage to open one side of the supply unit and communicating with the injection unit, wherein the purge gas flowing in the horizontal direction inside the lower plate through the supply passage is After flowing in the vertical direction through the vertical supply passage, it is characterized in that it is supplied to the injection unit.

In addition, the storage chamber may be partitioned into a plurality of purging areas in a vertical direction, and the spraying unit may include a plurality of spraying units arranged in a vertical direction to correspond to each of the plurality of purging areas partitioned in the vertical direction. The plate has a plurality of supply passages through which the purge gas supplied from each of the plurality of external supply lines individually flows, and the supply part has a plurality of vertical supply passages communicating the plurality of supply passages with each of the plurality of injection units. It is characterized by having a flow path.

In addition, the spraying unit may include a 1-1 spraying unit disposed on the left side of the storage room; and a 1-2 injection unit disposed adjacent to the 1-1 injection unit and distinguished from the 1-1 injection unit by being horizontally partitioned from each other, wherein the lower plate comprises the 1-1 injection unit. a 1-1 supply passage communicating with an external supply line and through which the purge gas supplied from the 1-1 external supply line flows; and a 1-2 supply passage in communication with the 1-2 external supply line and through which the purge gas supplied from the 1-2 external supply line flows, wherein the supply unit comprises: a 1-1 vertical supply passage communicating the 1-1 supply passage and the 1-1 injection unit so that purge gas is supplied to the 1-1 injection unit; and a 1-2 vertical supply passage communicating the 1-2 supply passage and the 1-2 injection unit so that the purge gas of the 1-2 supply passage is supplied to the 1-2 injection unit. to be characterized

In addition, the injection unit may include a 2-1 injection unit disposed above the 1-1 injection unit; A 2-2 injection unit disposed above the 1-2 injection unit, disposed adjacent to the 2-1 injection unit, and horizontally partitioned from the 1-1 injection unit to be distinguished from each other; further included. and a 2-1 supply passage in which the lower plate communicates with the 2-1 external supply line and flows the purge gas supplied from the 2-1 external supply line; and a 2-2 supply passage communicating with the 2-2 external supply line and through which the purge gas supplied from the 2-2 external supply line flows, wherein the supply unit comprises the 2-1 supply passage a 2-1 vertical supply passage communicating the 2-1 supply passage and the 2-1 injection part so that the purge gas of is supplied to the 2-1 injection part; and a 2-2 vertical supply passage communicating the 2-2 supply passage and the 2-2 injection unit so that the purge gas of the 2-2 supply passage is supplied to the 2-2 injection unit. characterized by

According to the wafer storage container of the present invention as described above, the following effects are obtained.

Since a sufficient amount of purge gas can be injected even to wafers stored in the upper part of the storage room, purging of a plurality of wafers stored in the storage room can be uniformly performed, thereby ensuring reliability of the wafer manufacturing process. .

In addition, since the wafer can be purged by selectively spraying the purge gas only to the wafer-located area among the plurality of purging areas, unnecessary waste of the purge gas can be prevented.

1 is a perspective view of a wafer storage container according to a preferred embodiment of the present invention.
Figure 2 is an exploded perspective view of Figure 1;
Figure 3 is a front view of Figure 1;
4 is a front view illustrating the flow of purge gas injected into first to third purging regions of FIG. 3;
5 is a partial perspective view showing an inner wall surface of the first injection unit of FIG. 1;
FIG. 6 is a partial perspective view illustrating first to third injection units of FIG. 1;
FIG. 7 is a partial perspective view illustrating purge gas flows in the 1-1 to 3-2 injection units of FIG. 6;
8 is a left sectional view showing a cross section on the left side of FIG. 1;
9 is a right cross-sectional view illustrating the flow of external gas exhausted to the first front exhaust unit of FIG. 8 and the flow of purge gas and fume exhausted to the exhaust unit;
10 is a partial perspective view illustrating an inner wall surface of a second injection unit of FIG. 1;
11 is a partial perspective view illustrating first-third to third-four injection units of FIG. 1;
FIG. 12 is a partial perspective view illustrating purge gas flows in first-third to third-four injection units of FIG. 11;
Fig. 13 is a right side sectional view showing a section on the right side of Fig. 1;
14 is a right cross-sectional view illustrating the flow of external gas exhausted to the second front exhaust unit of FIG. 13 and the flow of purge gas and fume exhausted to the exhaust unit;
Figure 15 is a plan sectional view of Figure 1;
FIG. 16 is a plan cross-sectional view illustrating the flow of purge gas injected to the wafer supported on the support of FIG. 15 and the flow of purge gas and fume exhausted to the exhaust unit;
17 is a front view showing the front of the exhaust unit of FIG. 1;
18 is a rear cross-sectional view showing a cross section of the rear surface of the exhaust unit of FIG. 17;
19 is a right side view showing the right side of the first supply unit of FIG. 1;
20 is a left side view showing a left side of the second supply unit of FIG. 1;
21 is a plan view of the support of FIG. 1;
FIG. 22 is a diagram showing a wafer supported on the support of FIG. 21;
23 is a perspective view illustrating a right side of the first front exhaust unit of FIG. 1;
24 is a sectional perspective view showing a cross section of a left side of the first front exhaust unit of FIG. 23;
25 is a perspective view showing a left side of the second front exhaust unit of FIG. 1;
26 is a sectional perspective view showing a cross section of a right side of the second front exhaust unit of FIG. 25;
27 is an exploded perspective view of the lower plate of FIG. 1;
28 is a plan view of the first lower plate of FIG. 27;
29 is a plan view of the second lower plate of FIG. 27;
30 is a plan view of the third lower plate of FIG. 27;
Fig. 31 is a plan view of the connecting portion of Fig. 27;
32 is a plan view illustrating the purge gas flow inside the lower plate of FIG. 27;
33 is a schematic view showing the purge gas supply/injection flow of the wafer storage container according to the preferred embodiment of the present invention.
34 is a schematic view showing exhaust flows of purge gas, fume, and external gas in a wafer storage container according to a preferred embodiment of the present invention.

A 'purge gas' referred to below is a generic term for an inert gas for removing fume from a wafer, and in particular, may be nitrogen (N ₂ ) gas, which is one of the inert gases.

In addition, 'Purging' is a general term for removing fume remaining on the surface of a wafer by spraying a purge gas onto the wafer or preventing oxidation of the wafer.

A wafer storage container according to a preferred embodiment of the present invention includes a storage compartment in which wafers stored through a front opening are stored, a plurality of injection units for injecting a purge gas into the storage compartment, and a purge gas and fume exhaust exhaust gas in the storage compartment. It is configured to include a base and a supply unit for supplying a purge gas to the plurality of injection units.

A front opening is formed in front of the storage compartment, and wafers enter and exit the storage compartment through the front opening.

A support for supporting wafers is provided inside the storage chamber, and the wafers are supported and stored on the support, so that the wafers stored through the front opening can be easily accommodated.

The plurality of jetting units inject purge gas into the storage chamber where the wafers are stored, the exhaust unit exhausts the purge gas sprayed into the storage chamber by the plurality of jetting units and the fume of the wafer, and the supply unit exhausts the fumes introduced from the outside of the wafer storage container. A purge gas is supplied to a plurality of injection units.

The storage room described above can be partitioned into a plurality of purging areas in a vertical direction. In this case, the purging region refers to a region in which each of the plurality of jetting units individually receives purge gas and injects the purge gas into the storage chamber, whereby the wafer is purged.

The number of purging regions as described above may be variously partitioned according to the purpose and size of the wafer storage container within a range capable of achieving the object of the present invention.

Since wafers are often transferred to each process in units of 10 wafers during the wafer manufacturing process, it is desirable to achieve purging of 10 wafers in one purging area, and the number of wafers stored in the wafer storage container is generally 30.

Therefore, when the number of wafers stored in the wafer storage container is 30, the purging area partitioned into the storage chamber may be partitioned into, for example, three purging areas.

In this case, the wafer storage container is preferably provided with three jetting units, that is, first to third jetting units to partition the first to third purging regions. Hereinafter, this will be described as a standard.

As described above, when the first to third injection units are provided to individually receive the purge gas and inject the purge gas into the storage compartment, the storage compartment may be divided into first to third purging areas. In this case, the first injection unit injects the purge gas into the first purging region, the second injection unit injects the purge gas into the second purging region, and the third injection unit injects the purge gas into the third purging region. The first to third purging regions are vertically partitioned inside the storage compartment.

As described above, in order to achieve partitioning of the first to third purging regions in the vertical direction in the storage chamber by receiving the purge gas individually from the first to third injection units and injecting the purge gas into the storage chamber, the first to third purging regions are separately supplied. Each of the third injection units may have an injection hole having a vertical position corresponding to each of the first to third purging regions.

For example, when the first to third purging regions are divided into a first purging region, a second purging region, and a third purging region in order from bottom to top (ie, the first purging region is the lower area of the storage room, The second purging area is the middle area of the storage compartment, and the third purging area is the upper area of the storage compartment). can Accordingly, the first injection units may individually receive the purge gas and inject the purge gas only to the first purging region, which is a lower region of the storage chamber.

In addition, the injection hole formed in the second injection unit may be formed at a position corresponding to the height of the second purging region (intermediate region), whereby the second injection unit receives purge gas individually and is located in the middle of the storage room. The purge gas may be injected only in the second purging region, which is the region.

In addition, the injection hole formed in the third injection unit may be formed at a position (upper area) corresponding to the height of the third purging region, whereby the third injection unit receives purge gas individually and is located in the middle of the storage room. The purge gas may be injected only in the third purging region, which is the region.

As described above, in the case of the wafer storage container of the present invention, the first to third injection units individually receive purge gas and spray it into the storage compartment, thereby forming first to third purging regions vertically partitioned inside the storage compartment. It becomes.

Therefore, the flow of the purge gas flowing into each of the first to third purging regions is performed separately, and thus, unlike the prior art, the purge gas flowing into the third purging region, which is the upper region of the storage chamber, is separated from the first purging region. However, since it does not have to flow into the second purging region, loss of the flow rate of the purge gas does not occur.

Therefore, in the case of the wafer storage container of the present invention, unlike the prior art, a sufficient amount of purge gas can be injected even to the third purging region, which is an upper region of the storage chamber.

In addition, since the first to third injection units are individually supplied with purge gas, the supply of purge gas to the first to third injection units is controlled, so that the purge gas injected into the first to third purging regions of the storage chamber is reduced. Therefore, the purge gas may be sprayed only to the area in which the wafer is accommodated and stored among the first to third purging areas. Therefore, it is possible to prevent the waste of the purge gas caused by spraying the purge gas to the area where the wafer is not stored in the prior art, and the purge gas is sprayed on the wafer according to the waiting time of the wafer stored in the storage room to clean the wafer. By removing the fume, it is possible to minimize the occurrence of wafer defects that occur when the fume of some wafers is not removed.

In a configuration different from the above, in order to achieve partitioning of the first to third purging regions in the vertical direction in the storage chamber by receiving the purge gas individually from the first to third injection units and injecting the purge gas into the storage chamber. , The first to third injection units may be vertically stacked to correspond to the vertically partitioned first to third purging regions.

For example, when the first to third purging regions are divided into a first purging region, a second purging region, and a third purging region in order from bottom to top (ie, the first purging region is the lower area of the storage room, The second purging area is the middle area of the storage compartment, and the third purging area is the upper area of the storage compartment. The injection units may be arranged to be stacked in a vertical direction. In this case, each of the first to third jetting units may have an inner wall surface of the jetting unit in contact with the storage chamber, and a jetting hole through which the purge gas is jetted into the storage chamber may be formed on the inner wall surface of the jetting unit.

Accordingly, the first injection unit may receive the purge gas individually and inject the purge gas only to the first purging region through the injection hole formed on the inner wall surface of the injection unit provided in the first injection unit.

In addition, the second injection unit can receive the purge gas individually and inject the purge gas only to the second purging area through the injection hole formed on the inner wall surface of the injection unit provided in the second injection unit, and the third injection unit can also individually The purge gas may be supplied to the third injection unit and the purge gas may be injected only in the third purging area through a spray hole formed on an inner wall surface of the spray unit provided in the third spray unit.

As described above, when the first to third injection units are vertically stacked to inject purge gas into each of the first to third purging regions, the first to third injection units are respectively disposed in the first to third purging regions. It may be divided into a plurality of injection units for injecting purge gas in multiple directions.

For example, the first injection unit for injecting the purge gas into the first purging region includes the 1-1 injection unit for injecting the purge gas to the front left side of the first purging region, and the 1-1 injection unit for injecting the purge gas to the rear left side of the first purging region. It includes a 1-2 injection unit, a 1-3 injection unit for injecting purge gas to the front right side of the first purging region, and a 1-4 injection unit for injecting purge gas to the rear right side of the first purging region. can

The second injection unit for injecting the purge gas into the second purging area, the 2-1 injection unit for injecting the purge gas to the front left side of the second purging area like the first injection unit, and the rear left side of the second purging area 2-2 injection unit for injecting purge gas into the 2-2 injection unit for injecting purge gas to the front right side of the second purging region, and 2-3 injection unit for injecting purge gas to the rear right side of the second purging region. -4 Injection part may be included.

The 3-1 injection unit for injecting the purge gas into the third purging area also includes the 3-1 injection unit for injecting the purge gas to the front left side of the third purging area, and the rear left side of the third purging area. 3-2 injection unit for injecting purge gas to the front right side of the third purging area, 3-3 injection unit for injecting purge gas to the front right side of the third purging area, and 3rd injection unit for injecting purge gas to the rear right side of the third purging area. -4 Injection part may be included.

As described above, each of the first to third injection units includes the 1-1 to 1-4 injection units, the 2-1 to 2-4 injection units, and the 3-1 to 3-4 injection units. As a result, the purge gas can be sprayed to each of the first to third purging regions of the storage compartment without a dead area, and thus, fume of wafers stored in the storage compartment can be efficiently removed.

Hereinafter, as one embodiment of a wafer storage container according to a preferred embodiment of the present invention, as described above, a plurality of jetting units are composed of first to third jetting units, and each of the first to third jetting units has a first to third jetting unit. -1 to 1-4 injection units, 2-1 to 2-4 injection units, and 3-1 to 3-4 injection units will be described based on the configuration.

In this case, 30 wafers are stored in the storage compartment, and first to third purging regions are partitioned in a vertical direction by first to third jetting units inside the storage compartment. Accordingly, 10 wafers are located in each of the first to third purging regions, and purging of each of the 10 wafers can be achieved by the first to third injection units.

Hereinafter, a wafer storage container 10 according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

1 is a perspective view of a wafer storage container according to a preferred embodiment of the present invention, FIG. 2 is an exploded perspective view of FIG. 1, FIG. 3 is a front view of FIG. 1, and FIG. 4 is a first to third purging regions of FIG. 5 is a partial perspective view showing the inner wall surface of the first injection unit in FIG. 1, and FIG. 6 is a view showing the 1-1 to 3-2 injection units in FIG. 7 is a partial perspective view showing the flow of purge gas in the 1-1 to 3-2 injection units of FIG. 6, FIG. 8 is a left sectional view showing a cross section of the left side of FIG. 1, and FIG. 9 is a partial perspective view. 8 is a right cross-sectional view showing the flow of external gas exhausted to the first front exhaust unit and the flow of purge gas and fume exhausted to the exhaust unit, and FIG. 10 is a partial perspective view showing the inner wall surface of the second injection unit in FIG. 1 11 is a partial perspective view showing the 1-3 to 3-4 injection units of FIG. 1, and FIG. 12 is a partial perspective view showing the flow of purge gas in the 1-3 to 3-4 injection units of FIG. 13 is a right cross-sectional view showing the right side cross section of FIG. 1, and FIG. 14 is a right cross-sectional view showing the flow of external gas exhausted to the second front exhaust unit of FIG. 13 and the flow of purge gas and fume exhausted to the exhaust unit. FIG. 15 is a cross-sectional plan view of FIG. 1, and FIG. 16 is a cross-sectional plan view showing the flow of purge gas injected to the wafer supported on the support of FIG. 15 and the flow of purge gas and fume exhausted to the exhaust unit. FIG. is a front view showing the front of the exhaust unit in FIG. 1, FIG. 18 is a rear cross-sectional view showing a cross section of the rear surface of the exhaust unit in FIG. 17, and FIG. 19 is a right side view showing the right side of the first supply unit in FIG. , FIG. 20 is a left side view showing the left side of the second supply unit in FIG. 1, FIG. 21 is a plan view of the support of FIG. 1, and FIG. 22 is a view showing a wafer supported by the support of FIG. 21, FIG. 23 is a perspective view showing a right side of the first front exhaust unit of FIG. 1 , FIG. 24 is a cross-sectional perspective view showing a cross section of the left side of the first front exhaust unit of FIG. 23 , and FIG. 25 is a perspective view of the second front exhaust unit of FIG. 1 . A perspective view showing the left side of the exhaust unit, FIG. 26 is a sectional perspective view showing the cross section of the right side of the second front exhaust unit of FIG. 25, FIG. 27 is an exploded perspective view of the lower plate of FIG. 1, and FIG. A plan view of the first lower plate, FIG. 29 is a plan view of the second lower plate of FIG. 27, FIG. 30 is a plan view of the third lower plate of FIG. 27, FIG. 31 is a plan view of the connecting portion of FIG. 27, and FIG. 27 is a plan view showing the purge gas flow inside the lower plate, FIG. 33 is a schematic diagram showing the purge gas supply/injection flow of the wafer storage container according to a preferred embodiment of the present invention, and FIG. 34 is a preferred embodiment of the present invention. It is a schematic diagram showing the exhaust flow of the purge gas, fume, and external gas of the wafer storage container according to the embodiment.

As shown in FIGS. 1 to 3 , the wafer storage container 10 according to a preferred embodiment of the present invention includes a storage room 200 in which wafers W stored through a front opening 251 are stored, and The first to third injection units 310, 320, and 330 for injecting the purge gas into the chamber 200, and the first to eighth horizontal lines constituting the frames of the first to third injection units 310, 320, and 330. The members 111 to 118 and the first to sixth vertical members 121 to 126, an exhaust unit 400 for exhausting purge gas and fume from the storage room 200, and first to third spray units 310 , 320, 330, a supply unit for supplying a purge gas to the storage room 200, a support 600 provided inside the storage room 200 to support the wafer W, and a first device disposed on the left and right sides of the storage room 200. The first and second front exhaust units 710 and 750, the lower plate 800 forming the lower surface of the wafer storage container 10, the connecting member 850 installed under the lower plate 800, and the wafer storage It is configured to include an upper plate 900 forming the upper surface of the container 10.

storage room (200)

Hereinafter, the storage room 200 will be described.

As shown in FIGS. 1 to 3 , the storage room 200 functions to store wafers W therein, and the first to third injection units 310 , 320 , and 330 and the exhaust unit 400 It is defined as the inner space surrounded by

A front opening 251 is formed in front of the storage chamber 200 , and the wafer W enters and exits through the front opening 251 .

The upper surface of the storage room 200 is made of an upper plate 900, the lower surface of the storage room 200 is made of a lower plate 800, and the circumferential surface of the storage room 200 is made of the first and second It is made up of the inner wall surfaces 340 and 350 of the gable part and the inner wall surface 440 of the exhaust part.

Accordingly, the storage compartment 200 has an upper surface, a lower surface, and a circumferential surface excluding the front opening 251, the lower plate 800, the inner wall surfaces 340 and 350 of the first and second injection units, and the inside of the exhaust unit. It is closed by the wall 440.

In addition, a spray hole 390 and an exhaust hole 490 are formed on the inner wall surfaces 340 and 350 of the first and second injection parts and the inner wall surface 440 of the exhaust part, which form the circumferential surface of the storage room 200, respectively. , the purge gas may be injected into the storage chamber 200 through the spray hole 490, or the purge gas and the fume of the wafer W sprayed into the storage chamber 200 through the exhaust hole 490 may be exhausted.

A support 600 for supporting the wafer W is provided inside the storage room 200, and as a result, the wafer W is supported by the support 600 and can be easily stored in the storage room 200. .

In this case, as shown in FIGS. 5 and 10 , the support 600 is controlled by the first and second support coupling parts 345 and 355 provided at the left rear and right rear of the storage room 200, respectively. It can be easily installed on the inner wall surfaces 340 and 350 of the first and second injection units.

In addition, a plurality of supports 600 may be provided in a vertical direction according to the number of wafers W stored in the storage room 200 . Accordingly, 30 supports 600 for supporting each of the 30 wafers W are provided in the storage room 200, and a detailed description of these supports 600 will be described later.

3 and 4, the interior of the storage compartment 200 is vertically partitioned into first to third purging regions 210, 220, and 230, and in this case, the first to third purging regions 210, 220, and 230, in order from the bottom to the top, A purging region 210, a second purging region 220, and a third purging region 230 are sequentially partitioned.

The first to third purging regions 210, 220, and 230 are virtual regions partitioned inside the storage chamber 200, and the purge gas injected from the first to third injection units 310, 320, and 330, respectively. refers to the area where the wafer W is purged by

Therefore, the wafer W stored in the storage chamber 200 and positioned in the first purging area 210 is purged by the purge gas sprayed from the first injection unit 310, and The wafer W positioned in the position is purged by the purge gas injected from the second injection unit 320, and the wafer W positioned in the third purging region 230 is purged by the purge gas injected from the third injection unit 330. purged by gas.

In addition, the purge gas supplied to the first injection unit 310, the purge gas supplied to the second injection unit 320, and the purge gas supplied to the third injection unit 330 are separately supplied. A detailed description will be given later.

1st to 3rd injection part (310, 320, 330)

Hereinafter, the first to third injection units 310, 320, and 330 will be described.

As shown in FIGS. 3 and 4 , the first to third spraying units 310, 320, and 330 are arranged to surround the circumference of the storage compartment 200, and the first spraying units 310 are arranged in order from bottom to top. ), the second injection unit 320, and the third injection unit 330 are vertically stacked, so that the first to third purging regions 210, 220, and 230 vertically partitioned in the storage chamber 200 ) are arranged to correspond to each other.

In other words, the first injection part 310 is disposed above the lower plate 800, the second injection part 320 is disposed above the first injection part 310, and the third injection part 330 is It is disposed above the second injection part 320 and below the upper plate 900 . That is, between the lower plate 800 and the upper plate 900, the first to third injection units 310, 320, and 330 are vertically disposed in three layers. Accordingly, the division of the first to third purging regions 210 , 220 , and 230 by the purge gas injected from the first to third injection units 310 , 320 , and 330 can be easily performed.

6 and 11, the first to third injection units 310, 320, and 330 include the 1-1 to 1-4 injection units 310a to 310d, and the 2-1 to 330, respectively. It may be configured to include 2-4 injection units 320a to 320d and 3-1 to 3-4 injection units 330a to 330d, in this case, 1-1 to 1-4 injection units ( 310a to 310d) inject purge gas into the first purging region 210, and 2-1 to 2-4 injection units 320a to 320d inject purge gas into the second purging region 220, The 3-1 to 3-4 injection units 330a to 330d inject purge gas into the third purging region 230 .

In addition, the 1-1 and 1-2 injection parts 310a and 310b, the 2-1 and 2-2 injection parts 320a and 320b, the 3-1 and 3-2 injection parts 330a and 330b, The 1-3 and 1-4 injection parts 310c and 310d, the 2-3 and 2-4 injection parts 320c and 320d, and the 3-3 and 3-4 injection parts 330c and 330d will be described later, respectively. The purge gas is individually supplied through the 1-1 to 3-2 external supply lines (not shown), which will be described in detail later.

As described above, the first injection unit 310, the second injection unit 320, and the third injection unit 330 are vertically stacked, so that they are vertically distinguished from each other.

In other words, the 1-1 and 1-2 injection parts 310a and 310b and the 2-1 and 2-2 injection parts 320a and 320b and the third The -1 and 3-2 injection units 330a and 330b are distinguished from each other in the vertical direction, and the vertical distinction is as follows.

A second horizontal member 112 is provided between the 1-1 and 1-2 injection units 310a and 310b and the 2-1 and 2-2 injection units 320a and 320b. -1, 1-2 injection units (310a, 310b) and 2-1, 2-2 injection units (320a, 320b) are distinguished in the vertical direction.

A third horizontal member 113 is provided between the 2-1 and 2-2 injection units 320a and 320b and the 3-1 and 3-2 injection units 330a and 330b. -1, 2-2 injection units (320a, 320b) and 3-1, 3-2 injection units (330a, 330b) are distinguished in the vertical direction.

In addition, the 1st-3rd and 1-4th injection units 310c and 310d and the 2nd-3rd and 2-4th injection units 320c and 320d and the 3rd and 3rd injection units 310c and 310d are disposed on the right and rear right sides of the storage room 200. The 3 and 3-4 injection units 330c and 330d are distinguished from each other in the vertical direction, and the vertical distinction is as follows.

A sixth horizontal member 116 is provided between the 1-3 and 1-4 injection units 310c and 310d and the 2-3 and 2-4 injection units 320c and 320d. The -3, 1-4 injection parts 310c and 310d and the 2-3, 2-4 injection parts 320c and 320d are distinguished in the vertical direction.

In addition, a seventh horizontal member 117 is provided between the 2-3 and 2-4 injection units 320c and 320d and the 3-3 and 3-4 injection units 330c and 330d, and thereby, The 2-3 and 2-4 injection parts 320c and 320d and the 3-3 and 3-4 injection parts 330c and 330d are distinguished in the vertical direction.

In addition, the 1-1 injection part 310a, the 1-2 injection part 310b, the 2-1 injection part 320a, and the 2-2 injection part disposed on the left side and the rear left side of the storage room 200 A second vertical member 122 is provided between the injection part 320b and each of the 3-1 and 3-2 injection parts 330a and 3-2 injection parts 330b. Therefore, the 1-1 injection part 310a and the 1-2 injection part 310b are distinguished in the horizontal direction, and the 2-1 injection part 320a and the 2-2 injection part 320b are separated in the horizontal direction. , and the 3-1 injection part 330a and the 3-2 injection part 330b are distinguished in the horizontal direction.

In addition, the 1-3 injection units 310c and 1-4 injection units 310d, the 2-3 injection units 320c and the 2-4 injection units disposed on the right and rear right sides of the storage room 200 A fifth vertical member 125 is provided between the injection part 320d and each of the 3-3 injection part 330c and the 3-4 injection part 330d. Accordingly, the 1-3 injection part 310c and the 1-4 injection part 310d are distinguished in the horizontal direction, the 2-3 injection part 320c and the 2-4 injection part 320d are distinguished in the horizontal direction, and the 3-3 injection part ( 330c) and the 3-4 injection units 330d are distinguished in the horizontal direction.

Inner surfaces of the 1-1 and 1-2 injection parts 310a and 310b, the 2-1 and 2-2 injection parts 320a and 320b, and the 3-1 and 3-2 injection parts 330a and 330b is composed of the first injection part inner wall surface 340, the 1-1 and 1-2 injection parts 310a and 310b, the 2-1 and 2-2 injection parts 320a and 320b, and the 3-1 , 3-2 The outer surfaces of the injection parts 330a and 330b are formed by the outer wall surface 361 of the first injection part.

In this case, the inner wall surface 340 of the first injection unit is the storage room 200, the 1-1 and 1-2 injection units 310a and 310b, and the 2-1 and 2-2 injection units 320a and 320b. and provided between the 3-1 and 3-2 injection units 330a and 330b.

Therefore, the inner wall surface 340 of the first injection unit is formed by the 1-1 and 1-2 injection units 310a and 310b, the 2-1 and 2-2 injection units 320a and 320b and the 3-1 and 3 It forms the inner surface of the -2 injection parts 330a and 330b and the outer surface (or circumferential surface) of the storage room 200 at the same time. In other words, the 1-1 and 1-2 injection parts 310a and 310b, the 2-1 and 2-2 injection parts 320a and 320b, and the 3-1 and 3-2 injection parts 330a and 330b is brought into contact with the left and rear left sides of the storage room 200 by the inner wall surface 340 of the first injection unit.

The outer wall surface 361 of the first injection unit is provided to be spaced apart from the inner wall surface 340 of the first injection unit in the opposite direction to the storage room 200, and the inner wall surface 340 of the first injection unit and the first injection unit A separation space is formed between the outer wall surfaces 361 .

Accordingly, the 1-1 and 1-2 injection units 310a and 310b, the 2-1 and 2-2 injection units 320a and 320b, and the 3-1 and 3-2 injection units 330a and 330b, respectively. may be defined as a separation space between the inner wall surface 340 of the first injection unit and the outer wall surface 361 of the first injection unit.

Inner surfaces of the 1-3 and 1-4 injection parts 310c and 310d, the 2-3 and 2-4 injection parts 320c and 320d, and the 3-3 and 3-4 injection parts 330c and 330d is composed of the second injection part inner wall surface 350, the 1-3 and 1-4 injection parts 310c and 310d, the 2-3 and 2-4 injection parts 320c and 320d and the 3-3 , 3-4 The outer surface of the jetting parts 330c and 330d is made up of the outer wall surface 362 of the second jetting part.

In this case, the inner wall surface 350 of the second jetting unit is the storage room 200, the 1st-3rd and 1-4th jetting units 310c and 310d, and the 2nd-3rd and 2-4th jetting units 320c and 320d. and between the 3-3 and 3-4 injection units 330c and 330d.

Therefore, the inner wall surface 350 of the second injection unit is formed by the first-third and first-fourth injection portions 310c and 310d, the second-third and second-fourth injection portions 320c and 320d, and the third-third and third injection portions 320c and 320d. -4 It forms the inner surface of the injection units 330c and 330d and forms the outer surface (or circumferential surface) of the storage room 200 at the same time. In other words, the 1-3 and 1-4 injection parts 310c and 310d, the 2-3 and 2-4 injection parts 320c and 320d, and the 3-3 and 3-4 injection parts 330c and 330d is in contact with the right side and the rear right side of the storage room 200 by the inner wall surface 350 of the second injection unit.

The outer wall surface 362 of the second injection part is provided to be spaced apart from the inner wall surface 350 of the second injection part in the opposite direction to the storage room 200, and the inner wall surface 350 of the second injection part and the second injection part A separation space is formed between the outer wall surfaces 362 .

Accordingly, the 1-3 and 1-4 injection units 310c and 310d, the 2-3 and 2-4 injection units 320c and 320d, and the 3-3 and 3-4 injection units 330c and 330d, respectively. may be defined as a separation space between the inner wall surface 350 of the second injection unit and the outer wall surface 362 of the second injection unit.

A heater (not shown) for controlling temperature and humidity inside the storage compartment 200 may be provided in the aforementioned 1-1 to 3-4 spray units 310a to 330d.

The heater may be formed of 1-1 to 3-4 heaters to correspond to the 1-1 to 3-4 injection units 310a to 330d.

The 1-1 to 3-4 heaters are located on the outer surfaces of the first and second injection unit outer walls 361 and 362 so as to be provided on the outside of the 1-1 to 3-4 jetting units 310a to 330d, respectively. can be installed

In this case, it is recommended to install a cover (not shown) at a position spaced outward from the outer wall surfaces 361 and 362 of the first and second injection units so that the 1-1 to 3-4 heaters are not exposed to the outside. desirable. Therefore, the outermost circumferential surface of the wafer storage container 10 is made of a cover, and the 1-1 to 3-4 heaters are positioned between the outer wall surfaces 361 and 362 of the first and second injection units and the cover. do.

It is preferable that the 1-1 to 3-4 heaters are individually controlled, and thus, the first to third purging regions 210 and 220 of the 1-1 to 3-4 injection units 310a to 330d , 230), it is possible to operate only the heater corresponding to the injection unit for injecting the purge gas.

For example, when the 2-2 injection part 320b injects the purge gas into the second purging area 220, the 2-2 heater operates, and the purge gas is injected from the 2-2 injection part 320b. and the second purging region 220 of the storage chamber 200 may be heated. Therefore, purging of the wafer W accommodated in the second purging region 220 can be easily performed, and the humidity inside the second purging region 220 is lowered, thereby preventing oxidation of the wafer W. there is.

As described above, the individual control of the 1-1 to 3-4 heaters may be organically performed with the individual control of the 1-1 to 3-4 jet units 310a to 330d. Therefore, it is possible to achieve temperature and humidity control by the heater only in the desired purging area among the first to third purging areas 210, 220, and 230, and thus, the wafer W can be controlled with minimal energy (eg, electricity). Anti-oxidation can be achieved.

Injection hole (390)

Hereinafter, the injection hole 390 formed on the inner wall surface 340 of the first injection part and the inner wall surface 350 of the second injection part will be described.

3, 5, 8, 10 and 13, a plurality of injection holes 390 are formed on the inner wall surface 340 of the first injection part and the inner wall surface 350 of the second injection part. .

In this case, the plurality of injection holes 390 may be formed in a matrix form having rows and columns. As described above, the wafer storage container 10 according to a preferred embodiment of the present invention has 30 wafers (W). Since the purging is performed by storing the , it is preferable that the plurality of injection holes 390 have 30 rows.

In addition, it is preferable that the plurality of injection holes 390 are formed to be respectively located on the upper part of the 30 supports 600 . In other words, a plurality of injection holes 390 are formed on the inner wall surfaces 340 and 350 of the first and second injection parts so that the upper and lower portions of the support 600 are respectively supported by the 30 supporters 600. A purge gas can be easily sprayed onto the 30 wafers (W).

Among the injection holes 390 formed on the inner wall surface 340 of the first injection unit, the injection holes 390 located at the height corresponding to the first purging region 210 are the first-1 and 1-2 injection parts 310a, 310b) and the left and rear left sides of the first purging region 210 are communicated. Therefore, the purge gas supplied to the inside of the 1-1 and 1-2 injection units 310a and 310b may be injected to the left and rear left sides of the first purging region 210 through the injection holes.

Among the injection holes 390 formed on the inner wall surface 340 of the first injection unit, the injection holes 390 located at the height corresponding to the second purging area 220 are the 2-1 and 2-2 injection units 320a, 320b) and the left and rear left sides of the second purging region 220 are communicated. Therefore, the purge gas supplied to the inside of the 2-1 and 2-2 injection units 320a and 320b may be injected to the left and rear left sides of the first purging region 210 through the injection holes.

Among the injection holes 390 formed on the inner wall surface 340 of the first injection unit, the injection holes 390 located at the height corresponding to the third purging region 230 are the 3-1 and 3-2 injection units 330a, 330b) and the left and rear left sides of the third purging region 230 are communicated with each other. Therefore, the purge gas supplied to the inside of the 3-1 and 3-2 injection units 330a and 330b may be injected to the left and rear left sides of the first purging region 210 through the injection holes.

Among the injection holes 390 formed on the inner wall surface 350 of the second injection unit, the injection holes 390 located at the height corresponding to the first purging area 210 are the first to third and first to fourth injection portions 310c, 310d) and the right and rear right sides of the first purging region 210 are communicated. Accordingly, the purge gas supplied to the inside of the first to third and first to fourth injection units 310c and 310d may be injected to the right side and rear right side of the first purging region 210 through the injection hole.

Among the injection holes 390 formed on the inner wall surface 350 of the second injection unit, the injection holes 390 located at the height corresponding to the second purging area 220 are the 2-3 and 2-4 injection parts 320c, 320d) and the right and rear right sides of the second purging region 220 are communicated. Therefore, the purge gas supplied to the inside of the 2-3 and 2-4 injection units 320c and 320d may be injected to the right and rear right of the first purging region 210 through the injection hole.

Among the injection holes 390 formed on the inner wall surface 350 of the second injection unit, the injection hole 390 located at a height corresponding to the third purging region 230 is the third-third and third-fourth injection portions 330c, 330d) and the right and rear right sides of the third purging region 230 are communicated. Therefore, the purge gas supplied to the inside of the 3-3 and 3-4 injection units 330c and 330d may be injected to the right side and rear right side of the first purging region 210 through the injection hole.

As described above, the 1-1 to 3-4 injection units 310a to 330d are first to third through injection holes formed on the inner wall surface 340 of the first injection unit and the inner wall surface 350 of the second injection unit. The purge gas is injected into the purging regions 210 , 220 , and 230 , that is, into the storage chamber 200 .

In this case, as a predetermined purge gas is supplied and stored in each of the 1-1 to 3-2 injection units 310a to 330b, the internal pressure of the purge gas stored in each injection unit increases, and this internal pressure As a result, the purge gas is injected into the first to third purging regions 210, 220, and 230 through the injection hole 390.

As described above, the purge gas is injected from the injection holes 390 of the inner wall surface 340 of the first injection part and the inner wall surface 350 of the second injection part constituting the circumferential surface of the storage room 200, so that the dead area is larger than that of the prior art. has the effect of being able to minimize

In detail, in the case of the prior art, separate spraying members provided with spraying holes are provided on both sides of the storage chamber to spray the purge gas, but in the case of the wafer storage container 10 according to a preferred embodiment of the present invention, the first , the injection hole 390 is directly formed on the inner wall surfaces 340 and 350 of the second injection unit to inject the purge gas. Therefore, by simply forming the injection holes 390 on the inner wall surfaces 340 and 350 of the first and second injection units, the injection direction of the purge gas injected into the first to third purging regions 210, 220, and 230 is easily changed. As a result, it is possible to easily form an optimal arrangement of the injection holes 390 that minimizes the generation of dead areas.

In addition, by forming the injection holes 390 on the inner wall surfaces 340 and 350 of the first and second injection parts, the number of injection holes 390 can be easily added, and the number of injection holes 390 increases. When the plurality of injection holes 390 are densely arranged, a kind of surface injection effect such as purge gas is injected on the entire inner wall surfaces 340 and 350 of the first and second injection parts, which are the circumferential surfaces of the storage room 200, is achieved. can do. Therefore, unlike the prior art, a uniform injection pressure can be guaranteed, and thus, it is possible to prevent the purge gas from being intensively injected only in a partial region of the wafer W.

In addition, when the spray hole 390 is contaminated and clogged with fumes due to long-term use of the wafer storage container 10, the spray hole 390 is replaced by replacing the inner wall surfaces 340 and 350 of the first and second spray parts. ) can be solved, and easy maintenance of the wafer storage container 10 can be achieved.

Also, unlike the above-described embodiment, the injection holes 390 may have 30 or more rows in a vertical direction on the inner wall surfaces 340 and 350 of the first and second injection parts. In other words, one injection hole 390 may not be positioned between the plurality of supports 600 and two or more injection holes 390 may be formed in a vertical direction. Accordingly, more than 10 injection holes 390 may be formed in a vertical direction in one purging area, and thus, purging of the wafer W may be more easily achieved.

In addition, the shape of the injection hole 390 may be formed to have various shapes such as a rectangular slit shape, a slit shape with an arc end, a circular hole shape, and a polygonal hole shape.

1-1 to 3- 2 supply hole (371a ~ 373b) and 1-3 to 3-4 supply holes (371c ~ 373d)

Hereinafter, the 1-1st to 3-2th supply holes 371a to 373b formed on the outer wall surface 361 of the first injection unit and the 1-3rd to 1st-3rd supply holes formed on the outer wall surface 362 of the second injection unit 3-4 supply holes 371c to 373d will be described.

As shown in FIGS. 6 and 7 , the 1-1 to 3-2 supply holes 371a to 373b are formed on the outer wall surface 361 of the first injection unit.

The 1-1 supply hole 371a communicates the inside of the 1-1 injection unit 310a with the 1-1 supply space 531a of the first supply unit 510, and thereby, the 1-1 supply space The purge gas of 531a may flow into the 1-1 injection part 310a.

The 1-2 supply hole 371b communicates the inside of the 1-2 injection part 310b with the 1-2 supply space 531b of the first supply part 510, and thereby, the 1-2 supply space The purge gas of 531b may flow into the first-second injection unit 310b.

The 2-1 supply hole 372a communicates the inside of the 2-1 injection unit 320a with the 2-1 supply space 532a of the first supply unit 510, and thereby, the 2-1 supply space The purge gas of 532a may flow into the 2-1 injection unit 320a.

The 2-2 supply hole 372b communicates the inside of the 2-1 injection unit 320a with the 2-1 supply space 532a of the first supply unit 510, and thereby, the 2-1 supply space The purge gas of 532a may flow into the 2-1 injection unit 320a.

The 3-1 supply hole 373a communicates the inside of the 3-1 injection unit 330a with the 3-1 supply space 533a of the first supply unit 510, and thereby, the 3-1 supply space The purge gas of 533a may flow into the 3-1 injection unit 330a.

The 3-2 supply hole 373b communicates the inside of the 3-2 injection unit 330b with the 3-2 supply space 533b of the first supply unit 510, and thereby, the 3-2 supply space The purge gas of 533b may flow into the 3-2 injection part 330b.

As shown in FIGS. 11 and 12 , the 1-3 to 3-4 supply holes 371c to 373d are formed on the outer wall surface 362 of the second injection unit.

The 1-3 supply hole 371c communicates the inside of the 1-3 injection part 310c with the 1-3 supply space 531c of the second supply part 520, and thereby, the 1-3 supply space The purge gas of 531c may flow into the first to third injection units 310c.

The 1-4 supply hole 371d communicates the inside of the 1-4 injection part 310d with the 1-4 supply space 531d of the second supply part 520, and thus, the 1-4 supply space The purge gas of 531d may flow into the first to fourth injection units 310d.

The 2-3 supply hole 372c communicates the inside of the 2-3 injection unit 320c with the 2-3 supply space 532c of the second supply unit 520, and thereby, the 2-3 supply space The purge gas of 532c may flow into the second-third injection unit 320c.

The 2-4 supply hole 372d communicates the inside of the 2-4 injection unit 320d with the 2-4 supply space 532d of the second supply unit 520, and thus, the 2-4 supply space The purge gas of 532d may flow into the second-fourth injection unit 320d.

The 3-3 supply hole 373c communicates the inside of the 3-3 injection unit 330c with the 3-3 supply space 533c of the second supply unit 520, and thereby, the 3-3 supply space The purge gas of 533c may flow into the 3-3 injection unit 330c.

The 3-4 supply hole 373d communicates the inside of the 3-4 injection unit 330d with the 3-4 supply space 533d of the second supply unit 520, and thereby, the 3-4 supply space The purge gas of 533d may flow into the third and fourth injection units 330d.

The above-described 1-1 to 3-4 supply holes 371a to 373d are preferably formed in a slit shape having a length in the vertical direction longer than a length in the horizontal direction.

In addition, the horizontal lengths of the 1-1 to 3-4 supply holes 371a to 373d are the first and second supply parts communicating with the 1-1 to 3-4 supply holes 371a to 373d, respectively. It is preferable to be shorter than the horizontal length of the 1-1 to 3-4 supply spaces 531a to 533d.

When the purge gas flows from the 1-1 to 3-4 supply spaces 531a to 533d to the 1-1 to 3-4 supply holes 371a to 373d, the purge gas has a relatively wide area. By flowing from the 1-1 to 3-4 supply spaces 531a to 533d to the 1-1 to 3-4 supply holes 371a to 373d having a relatively small area, the injection pressure of the purge gas is instantaneously increased. because it can be raised to

As described above, when the injection pressure of the purge gas is instantaneously increased, the purge gas can easily flow into the entire inside of the 1-1 to 3-4 injection units 310a to 330d. The purge gas injected from the first to third-fourth injection units 310a to 330d may be more smoothly injected to the entire first to third purging regions 210 , 220 , and 230 .

First to eighth horizontal members (111 to 118) and first to sixth vertical members (121 to 126)

Hereinafter, the first to eighth horizontal members 111 to 118 and the first to sixth vertical members 121 to 126 will be described.

As shown in FIGS. 2 and 6 , the first to fourth horizontal members 111 to 114 and the first to third vertical members 121 to 123 are disposed on the left side of the storage room 200 .

The first to fourth horizontal members 111 to 114 are connected by first to third vertical members 121 to 123, and due to this connection structure, the first to fourth horizontal members 111 to 114 and The first to third vertical members 121 to 123 form the skeleton, that is, the frame, of the 1-1 to 3-2 injection units 310a to 330b.

In this case, each of the first to fourth horizontal members 111 to 114 and the first to third vertical members 121 to 123 may have a predetermined width, the width being the inner wall surface 340 of the first injection unit. and the same size as the width of the separation space between the outer wall surface 361 of the first injection unit. Accordingly, the width of the inner space of the 1-1 to 3-2 jetting units 310a to 330b may be defined by the width.

As shown in FIGS. 2 and 10 , the fifth to eighth horizontal members 115 to 118 and the fourth to sixth vertical members 124 to 126 are disposed on the right side of the storage compartment 200 .

The fifth to eighth horizontal members (115 to 118) are connected by the fourth to sixth vertical members (124 to 126), and due to this connection structure, the fifth to eighth horizontal members (115 to 118) and The 4 to 6 vertical members 124 to 126 form the skeleton, that is, the frame, of the 1-3 to 3-4 injection units 310c to 330d.

In this case, each of the fifth to eighth horizontal members 115 to 118 and the fourth to sixth vertical members 124 to 126 may have a predetermined width, the width being the inner wall surface 350 of the second injection unit. And it has the same size as the width of the separation space between the outer wall surface 362 of the second injection unit. Therefore, the width of the inner space of the 1-3 to 3-4 jetting units 310c to 330d is defined by the width.

Exhaust part (400)

Hereinafter, the exhaust unit 400 will be described.

2 to 14, the exhaust unit 400 includes 1-2 to 3-2 injection units 310b, 320b, and 330b and 1-4 to 3-4 injection units 310d, 320d, 330d). Therefore, the purge gas and the fume of the wafer W sprayed into the storage compartment 200 by the first to third injection units 310, 320, and 330 function to exhaust the rear of the storage compartment 200. .

As shown in FIGS. 5, 6, 10, 11 and 17, the inner surface of the exhaust unit 400 is formed of the inner wall surface 440 of the exhaust unit.

In this case, the inner wall surface 440 of the exhaust unit is provided between the storage compartment 200 and the exhaust unit 400 .

Accordingly, the inner wall surface 440 of the exhaust unit forms the inner surface of the exhaust unit 400 and the outer surface (or circumferential surface) of the storage compartment 200 at the same time. In other words, the exhaust unit 400 comes into contact with the rear of the storage compartment 200 by the inner wall surface 440 of the exhaust unit.

A plurality of exhaust holes 490 are formed on the inner wall surface 440 of the exhaust unit, and as described above, the wafer storage container 10 according to a preferred embodiment of the present invention accommodates 30 wafers W for purging. Therefore, it is preferable that 30 exhaust holes 490 are formed on the inner wall surface 440 of the exhaust unit.

In this case, 30 exhaust holes 490 are formed in a vertical direction, and each exhaust hole 490 is preferably positioned to have the same height as the row of the aforementioned spray holes 390 . In other words, the exhaust hole 490 is preferably formed to be positioned on top of each of the 30 supports 600, similarly to the injection hole 390.

17 and 18, the exhaust unit 400 includes first to third exhaust spaces 410, 420, and 430 communicating with the exhaust hole 490, and first to third exhaust spaces 410. , 420, 430 and the first to third vertical exhaust passages 411, 421, 431 communicating with each other may be provided.

The first to third exhaust spaces 410, 420, and 430 are the first exhaust space 410, the second exhaust space 420, and the third exhaust space 430 in order from bottom to top inside the exhaust unit 400. , and thus correspond to the first to third purging regions 210 , 220 , and 230 vertically partitioned in the storage chamber 200 .

Therefore, the purge gas and fume of the wafer W injected into the first purging region 210 are exhausted through the exhaust hole 490 communicating with the first exhaust space 410, and the second exhaust space 420 and The purge gas injected into the second purging area 220 and the fume of the wafer W are exhausted through the communicating exhaust hole 490, and the exhaust hole 490 communicating with the third exhaust space 430 removes the purge gas. 3 The purge gas injected into the purging area 230 and the fume of the wafer W are exhausted.

In this case, the number of exhaust holes 490 communicating with the first exhaust space 410 is 10, the number of exhaust holes 490 communicating with the second exhaust space 420 is 10, and the third exhaust space ( 430) and the number of exhaust holes 490 communicating with each other is 10.

Therefore, the fumes of the 10 wafers W stored in the first purging region 210 can be exhausted to the first exhaust space 410 together with the purge gas, and stored in the second purging region 220. Fume of 10 wafers (W) can be exhausted to the second exhaust space 420 together with purge gas, and fume of 10 wafers (W) stored in the third purging area 230 together with purge gas It may be exhausted to the third exhaust space 430 .

The first vertical exhaust passage 411 is provided to extend vertically inside the exhaust unit 400, one end communicates with the first exhaust space 410, and the other end of the first lower plate 810 to be described later. It communicates with the exhaust communication hole 815a. Accordingly, the first vertical exhaust passage 411 serves as a passage through which the purge gas exhausted into the first exhaust space 410 flows into the first exhaust communication hole 815a.

The second vertical exhaust passage 421 is provided to extend vertically inside the exhaust unit 400, one end communicates with the second exhaust space 420, and the other end of the first lower plate 810 to be described later. It communicates with the exhaust communication hole 815b. Accordingly, the second vertical exhaust passage 421 serves as a passage through which the purge gas exhausted into the second exhaust space 420 flows into the second exhaust communication hole 815b.

The third vertical exhaust passage 431 is provided to extend vertically inside the exhaust unit 400, one end communicates with the third exhaust space 430, and the other end of the first lower plate 810 to be described later. It communicates with the exhaust communication hole 815c. Accordingly, the third vertical exhaust passage 431 serves as a passage through which the purge gas exhausted into the third exhaust space 430 flows into the third exhaust communication hole 815c.

As described above, an exhaust hole 490 is formed on the inner wall surface 440 of the exhaust part 400 constituting the circumferential surface of the storage chamber 200, and the purge gas and the wafer W pass through the exhaust hole 490. By exhausting the fume, there is an effect that maintenance of the wafer storage container 10 is easy. That is, when the exhaust hole 490 is contaminated by fume and becomes clogged, problems caused by the clogging of the exhaust hole 490 can be easily solved by replacing only the inner wall surface 440 of the exhaust unit.

Also, unlike the above-described embodiment, 30 or more exhaust holes 490 may be formed in a vertical direction on the inner wall surface 440 of the exhaust unit. In other words, one exhaust hole 490 may not be located between the plurality of supports 600 and two or more spray holes 490 may be formed in a vertical direction. Accordingly, more than 10 exhaust holes 490 may be formed in a vertical direction in one purging area, and as a result, exhausting of fume generated after purging the wafer W may be more easily achieved. .

In addition, the shape of the exhaust hole 490 may be formed to have various shapes such as a rectangular slit shape, a slit shape with an arc end, a circular hole shape, and a polygonal hole shape.

supply department

The supply section will be described below.

As shown in FIGS. 2, 5, 6, 10, 11, and 15, the supply unit is disposed outside the 1-1 to 3-2 jet units 310a to 330b, and the storage compartment 200 ), the first supply unit 510 disposed on the left side, and the first supply unit 510 disposed outside the 1-3 to 3-4 injection units 310c to 330d and disposed on the right side with respect to the storage room 200. It may consist of two supply units 520.

The first supply unit 510 serves to supply the purge gas introduced through the lower plate 800 to the 1-1 to 3-2 injection units 310a to 330b, and the second supply unit 520 supplies the lower It functions to supply the purge gas introduced through the plate 800 to the 1-3 to 3-4 injection units 310c to 330d.

As shown in FIG. 19, the first supply unit 510 includes 1-1 to 3-2 supply spaces 531a to 533b communicating with the 1-1 to 3-2 supply holes 371a to 373b, respectively. ), and 1-1 to 3-2 vertical supply passages 541a to 543b communicating with the 1-1 to 3-2 supply spaces 531a to 533b, respectively.

Purge gas is stored in the 1-1 to 3-2 supply spaces 531a to 533b through the 1-1 to 3-2 supply holes 371a to 373b to the 1-1 to 3-2 supply spaces 531a to 533b. It refers to the space supplied to the second injection units 310a to 330b, and is formed by opening the right side of the first supply unit 510.

The 1-1 to 3-1 supply spaces 531a, 532a, and 533a are formed on the front side based on the center line (C1 in FIG. 19) of the first supply unit 510, and the 1-2 to 3-1 supply spaces 531a, 532a, and 533a The two supply spaces 531b, 532b, and 533b are formed on the rear side with respect to the center line (C1 in FIG. 19) of the first supply unit 510. That is, the 1-1 to 3-1 supply spaces 531a, 532a, and 533a and the 1-2 to 3-2 supply spaces 531b, 532b, and 533b are the center line of the first supply unit 510 (Fig. Based on C1) of 19, they are arranged symmetrically with each other.

Each of the 1-1 to 3-2 supply spaces 531a to 533b corresponds to the 1-1 to 3-2 supply holes 371a to 373b, respectively, the 1-1 supply space 531a and The 1-2 supply space 531b, the 2-1 supply space 532a and the 2-2 supply space 532b, the 3-1 supply space 533a and the 3-2 supply space 533b are They are arranged sequentially from the bottom to the top of the first supply unit 510.

In addition, the 1-1 supply space 531a and 1-2 supply space 531b, the 2-1 supply space 532a and 2-2 supply space 532b, and the 3-1 supply space 533a ) and the 3-2 supply space (533b), the size of the supply space is formed larger.

As described above, since the size of the supply space increases toward the top of the first supply unit 510, the flow rate of the purge gas flowing into the 3-1 supply space 533a and the 3-2 supply space 533b As a result, a sufficient amount of purge gas can be supplied to the 3-1 injection unit 330a and the 3-2 injection unit 330b.

Therefore, the 3-1 injection part 330a and the 3-2 injection part 330b can inject a sufficient amount of purge gas into the third purging region 230, and the upper portion of the storage compartment 200 can be divided into compartments. Purging of the wafer W in the third purging region 230 can be easily achieved.

The 1-1 to 3-2 vertical supply passages 541a to 543b are formed to extend vertically inside the first supply part 510, and each end has one end of the 1-1 to 3-2 supply spaces ( 531a to 533b), and the other end of each communicates with the 1-1 to 3-2 supply communication holes 811a to 813b formed in the first lower plate 810 . Therefore, the 1-1 to 3-2 vertical supply passages 541a to 543b supply the purge gas introduced from the 1-1 to 3-2 supply communication holes 811a to 813b to the 1-1 to 3rd It serves as a passage for flowing into the -2 supply space (531a ~ 533b).

In this case, the other ends of each of the 1-1 to 3-2 vertical supply passages 541a to 543b may be formed in the form of an open hole on the lower surface of the first supply unit, and thereby, the 1-1 to 543b. 3-2 It can be easily communicated with the supply communication holes 811a to 813b.

As shown in FIG. 20, the second supply unit 520 includes 1-3 to 3-4 supply spaces 531c to 533d communicating with the 1-3 to 3-4 supply holes 371c to 373d, respectively. ), and 1-3 to 3-4 vertical supply passages 541c to 543d communicating with the 1-3 to 3-4 supply spaces 531c to 533d, respectively.

The purge gas is stored in the 1-3 to 3-4 supply spaces 531c to 533d through the 1-3 to 3-4 supply holes 371c to 373d, and the 1-3 to 3-4 supply spaces 531c to 533d. It refers to the space supplied to the fourth injection parts 310c to 330d, and is formed by opening the left side of the second supply part 520.

The 1-3 to 3-3 supply spaces 531c, 532c, and 533c are formed on the front side based on the center line (C2 in FIG. 20) of the second supply unit 520, and the 1-4 to 3-3 The four supply spaces 531d, 532d, and 533d are formed on the rear side with respect to the center line (C2 in FIG. 20) of the second supply unit 520. That is, the 1-3 to 3-3 supply spaces 531c, 532c, and 533c and the 1-4 to 3-4 supply spaces 531d, 532d, and 533d are the center line of the second supply unit 520 (Fig. Based on C2) of 20, they are arranged symmetrically with each other.

The 1-3 to 3-4 supply spaces 531c to 533d correspond to the 1-3 to 3-4 supply holes 371c to 373d, respectively, the 1-3 supply spaces 531c and The 1-4 supply space 531d, the 2-3 supply space 532c and the 2-4 supply space 532d, the 3-3 supply space 533c and the 3-4 supply space 533d are They are arranged sequentially from the bottom to the top of the second supply unit 520.

In addition, the 1-3 supply spaces 531c and 1-4 supply spaces 531d, the 2-3 supply spaces 532c and the 2-4 supply spaces 532d, and the 3-3 supply spaces 533c ) and the 3rd-4th supply space (533d), the size of the supply space is formed larger.

As described above, since the size of the supply space increases toward the top of the second supply unit 520, the flow rate of the purge gas flowing into the 3-3 supply space 533c and the 3-4 supply space 533d As a result, a sufficient amount of purge gas may be supplied to the 3-3 injection unit 330c and the 3-4 injection unit 330d.

Therefore, the 3-3 injection part 330c and the 3-4 injection part 330d can inject a sufficient amount of purge gas into the third purging region 230, and the upper portion of the storage compartment 200 can be partitioned. Purging of the wafer W in the third purging region 230 can be easily achieved.

The 1-3 to 3-4 vertical supply passages 541c to 543d are formed to extend vertically inside the second supply unit 520, and one end of each of the 1-3 to 3-4 supply spaces ( 531c to 533d) communicate with each other, and the other end of each communicates with the first-third to third-fourth supply communication holes 811c to 813d formed in the first lower plate 810 . Therefore, the 1-3 to 3-4 vertical supply passages 541c to 543d supply the purge gas introduced from the 1-3 to 3-4 supply communication holes 811c to 813d to the 1-3 to 3rd -4 It serves as a passage to flow into the supply space (531c ~ 533d).

In this case, the other ends of each of the 1-3 to 3-4 vertical supply passages 541c to 543d may be formed in the form of holes opened on the lower surface of the second supply unit 520, and thereby, the first- It can be easily communicated with the 3 to 3-4 supply communication holes 811c to 813d.

As described above, due to the configuration of the first supply unit 510 and the second supply unit 520, the purge gas introduced through the lower plate 800 is supplied to the 1-1 to 3-4 injection units 310a to 330d. can be easily supplied.

As described above, in the wafer storage container 10 according to a preferred embodiment of the present invention, the first supply unit 510 is disposed outside the 1-1 to 3-2 jetting units 310a to 330b, Purge gas is supplied to the inside of the -1 to 3-2 injection units 310a to 330b, and the second supply unit 520 is disposed outside the 1-3 to 3-4 injection units 310c to 330d. Purge gas is supplied to the inside of the 1-3 to 3-4 injection units 310c to 330d.

Therefore, it is possible to supply the purge gas to 12 injection units using only two supply units, and thus, a compact structure of the wafer storage container 10 can be achieved.

Support (600)

Hereinafter, the support 600 will be described.

As shown in FIGS. 1 to 3 , the support 600 functions to support the wafers W stored in the storage compartment 200, and a plurality of support bars 600 may be provided in a vertical direction inside the storage compartment 200. can In this case, since the wafer storage container 10 according to a preferred embodiment of the present invention purifies 30 wafers W, 30 supports 600 are provided.

21 and 22, the support 600 includes a rear support 610, a left support 620 extending forward from the left side of the rear support 610, and a rear support 610. It is configured to include a right support portion 630 formed to extend from the right side of the forward direction.

The rear support portion 610 functions to support the rear side of the wafer W, and a rear circular arc portion 611 is formed in the rear support portion 610 .

The rear arc portion 611 is formed stepwise from the upper surface of the rear support portion 610 in the downward direction and has an arc shape.

In this case, the rear arc portion 611 has an arc shape having the same curvature as the curvature of the wafer W, and thus, the rear arc portion 611, the left arc portion 621, and the right arc portion 631 are virtual. It is connected by a line of and a circular shape like the wafer (W) is made.

A rear protrusion 612 is formed on the rear circular arc portion 611, and the rear protrusion 612 serves to support the rear lower surface of the wafer W.

The left support part 620 is formed to extend forward from the left side of the rear support part 610, and functions to support the left side of the wafer W. In addition, a left circular arc portion 621 is formed in the left support portion 620 .

The left circular arc part 621 is formed stepwise from the upper surface of the left support part 620 in the downward direction and has an arc shape.

In this case, the left arc portion 621 has an arc shape having the same curvature as the wafer W, and thus, the rear arc portion 611, the left arc portion 621, and the right arc portion 631 are virtual. It is connected by a line of and a circular shape like the wafer (W) is made.

A left protrusion 622 is formed on the left circular arc portion 621, and the rear protrusion 612 serves to support the right lower surface of the wafer W.

The right support part 630 is formed to extend forward from the left side of the right support part 630, and functions to support the right side of the wafer W. In addition, a right circular arc portion 631 is formed in the right support portion 630 .

The right circular arc portion 631 is formed stepwise from the upper surface of the right supporting portion 630 to the lower direction, and has an arc shape.

In this case, the right arc portion 631 has a circular arc shape having the same curvature as the curvature of the wafer W, and thus, the rear arc portion 611, the left arc portion 621, and the right arc portion 631 are virtual. It is connected by a line of and a circular shape like the wafer (W) is made.

A right protrusion 632 is formed on the right circular arc portion 631, and the rear protrusion 612 serves to support the left lower surface of the wafer W.

As described above, the rear protrusion 612, the left protrusion 622, and the right protrusion 632 support the rear, left, and right bottom surfaces of the wafer W, respectively, so that the wafer W is supported at three points. As such, since the wafer W is supported by three points by the three protrusions, the contact area of the wafer W can be minimized, thereby preventing damage to the wafer W due to contact of the wafer W. can do.

A left inclined portion 640 may be formed on an outer surface of a portion where the rear support portion 610 and the left support portion 620 extend.

The left inclined portion 640 is inclined in an outward direction from the rear to the front.

A right inclined portion 650 may be formed on an outer surface of a portion where the rear support portion 610 and the right support portion 630 extend.

The right inclined portion 650 is also inclined in an outward direction from the rear to the front.

As described above, the left and right inclined portions 640 and 650 are related to the compact structure of the wafer storage container 10 .

That is, the left and right sides of the wafer storage container 10 are formed with inclined portions such as the left and right inclined portions 640 and 650, and the left and right inclined portions 640 and 650 are supported to have a corresponding shape. (600).

The above inclined portions function to minimize the area of the wafer storage container 10, and thus, the wafer storage container 10 has a compact structure.

A left concave portion 660 is formed on the inner surface of the portion where the rear support portion 610 and the left support portion 620 extend, and a right concave portion 660 is formed on the inner surface of the portion where the rear support portion 610 and the right support portion 630 extend. Section 670 is formed.

The left concave portion 660 is concave in the rearward direction between the rear arcuate portion 611 and the left arcuate portion 621 .

The right concave portion 670 is concave in the rear direction between the rear arc portion 611 and the right arc portion 631 .

The left and right concave portions 660 and 670 as described above allow the fingers (not shown) of the robot arm to support the support 600 when the wafer W is stored in the storage room 200 by the robot arm (not shown). That is, it functions to prevent contact with the inner surface of the rear support part 610, and as a result, the wafer W can easily come in and out of the storage room 200 through the front opening 251 and be placed on the support 600. can be supported

Due to the above configuration and shape of the support 600, as shown in FIG. 22, when the wafer W is supported on the support 600, the vertical flow of the purge gas inside the storage chamber 200 is minimized. can do.

In detail, the wafer W includes a rear protrusion 612, a left protrusion 622, and a right protrusion 632 formed on the rear arc portion 611, the left arc portion 621, and the right arc portion 631, respectively. When supported by three points, the area except for the left and right concave portions 660 and 670 of the support 600 is closed by the wafer W. Accordingly, the support 600 on which the wafer W is supported serves as a kind of partition in the vertical direction inside the storage chamber 200, and thus, the vertical flow of the purge gas may be restricted.

In addition, even if the area where the left and right concave portions 660 and 670 are formed in the support 600 is not closed by the wafer W, the purge gas is supplied to the area where the left and right concave portions 660 and 670 are located. Since it is sprayed in a horizontal direction, the vertical flow of the purge gas may be restricted by the purge gas sprayed in the horizontal direction.

In detail, the injection holes 390 of the 1-2 injection part 310b, 2-2 injection part 320b, and 3-2 injection part 330b are located where the left concave part 660 is located. The purge gas is sprayed in the direction. In addition, the injection holes 390 of the first-fourth injection part 310d, the second-fourth injection part 320d, and the third-fourth injection part 330d are purged in the direction where the right concave part 670 is located. will inject gas.

As described above, the injection holes 390 of the first to third injection parts 310, 320, and 330 inject the purge gas in the direction where the left and right concave parts 660 are located. In this case, the injected purge gas The gas is sprayed in a horizontal direction. Therefore, the purge gas is sprayed and flows while forming a kind of horizontal layer.

By the purge gas flowing in such a horizontal layer, it is possible to prevent the purge gas from flowing in the vertical direction through the left and right concave portions 660 and 670, and thus, the support 600 is Restricting vertical flow can be achieved.

Restriction of the vertical flow of the purge gas by the aforementioned support 600 enables more efficient individual control of the first to third injection units 310, 320, and 330 to be described later.

In addition, the support 600 described above has been described based on the fact that the left and right concave portions 660 and 670 are formed to prevent the fingers of the robot arm from contacting the support 600, but the fingers of the robot arm Depending on the shape, the support 600 may also be formed without the left and right concave portions 660 and 670 . Therefore, when the wafer W is supported on the support 600, the inner space of the support 600 (a space opened to support the wafer W) is closed by the wafer W, as described above. Restriction of the vertical flow of the purge gas can be achieved more effectively.

1st Front Exhaust part (710) and the second front Exhaust part (750)

Hereinafter, the first front exhaust unit 710 and the second front exhaust unit 750 will be described.

As shown in FIGS. 1, 2, 5, 6, 10 and 11, the first and second front exhaust units 710 and 750 are disposed on both sides of the front of the storage compartment 200, respectively, and By exhausting the gas, it functions to block the inflow of external gas into the storage compartment 200 .

In this case, external gas refers to all gases including external air.

The first front exhaust unit 710 is disposed in front of the 1-1 to 3-1 injection units 310a, 320a, and 330a so as to be disposed in the front left side of the storage compartment 200.

23 and 24, in the first front exhaust unit 710, a first exhaust slit 720 and fourth to sixth exhaust spaces 721a and 721b communicating with the first exhaust slit 720 are provided. , 721c), and fourth to sixth vertical exhaust passages 731a, 731b, 731c (731a, 731b, 731c) communicating with the fourth to sixth exhaust spaces 721a, 721b, 721c, respectively.

The first exhaust slit 720 is formed while opening the right side of the first front exhaust part 710 . In this case, the first exhaust slit 720 has a slit shape in which the length in the vertical direction is longer than the length in the horizontal direction.

The fourth to sixth exhaust spaces 721a, 721b, and 721c communicate with the first exhaust slit 720 and correspond to the first to third purging regions 210, 220, and 230, so as to correspond to the first front exhaust unit 710. ) is formed inside the Accordingly, the fourth exhaust space 721a, the fifth exhaust space 721b, and the sixth exhaust space 721c are disposed in the order from the bottom to the top of the first front exhaust unit 710, and the fourth to sixth exhaust spaces are arranged. (721a, 721b, 721c) are formed to have the same height as each of the first to third purging regions 210, 220, and 230.

The fourth to sixth vertical exhaust passages 731a, 731b, and 731c (731a, 731b, and 731c) extend vertically inside the first front exhaust part 710, and each end has a fourth to sixth end. It communicates with the exhaust spaces 721a, 721b, and 721c, and each other end communicates with the fourth to sixth exhaust communication holes 816a, 816b, and 816c of the first lower plate 810, respectively. Accordingly, the fourth to sixth vertical exhaust passages 731a, 731b, and 731c (731a, 731b, and 731c) remove external gas exhausted through the fourth to sixth exhaust spaces 721a, 721b, and 721c into fourth to sixth exhaust passages. It serves as a passage for flowing into the six exhaust communication holes 816a, 816b, and 816c.

In this case, the other ends of each of the fourth to sixth vertical exhaust passages 731a, 731b, and 731c (731a, 731b, and 731c) may be formed in the form of holes opened on the lower surface of the first front exhaust part 710, , so that it can easily communicate with the fourth to sixth exhaust communication holes 816a, 816b, and 816c.

As shown in FIGS. 25 and 26, the second front exhaust unit 750 includes a second exhaust slit 760 and seventh to ninth exhaust spaces 761a and 761b communicating with the second exhaust slit 720. , 761c), and the seventh to ninth vertical exhaust passages 771a, 771b, and 771c (771a, 771b, and 771c) communicating with the seventh to ninth exhaust spaces 721a, 721b, and 721c, respectively.

The second exhaust slit 760 is formed while opening the left side of the second front exhaust part 750 . In this case, the second exhaust slit 760 has a slit shape in which the length in the vertical direction is longer than the length in the horizontal direction.

The seventh to ninth exhaust spaces 761a, 761b, and 761c communicate with the second exhaust slit 760 and correspond to the first to third purging regions 210, 220, and 230 so as to correspond to the second front exhaust unit 750. ) is formed inside the Accordingly, the seventh exhaust space 761a, the eighth exhaust space 761b, and the ninth exhaust space 761c are disposed in the order from the bottom to the top of the second front exhaust unit 750, and the seventh to ninth exhaust spaces are arranged. (761a, 761b, 761c) are formed to have the same height as each of the first to third purging regions 210, 220, and 230.

The seventh to ninth vertical exhaust passages 771a, 771b, and 771c (771a, 771b, and 771c) extend vertically inside the second front exhaust part 750, and each end has a seventh to ninth end. It communicates with the exhaust spaces 761a, 761b, and 761c, and each other end communicates with the seventh to ninth exhaust communication holes 817a, 817b, and 817c of the first lower plate 810, respectively. Accordingly, the seventh to ninth vertical exhaust passages 771a, 771b, and 771c (771a, 771b, and 771c) discharge external gas exhausted through the seventh to ninth exhaust spaces 761a, 761b, and 761c into the seventh to third exhaust passages. It serves as a passage for flowing into the 9 exhaust communication holes 817a, 817b, and 817c.

In this case, the other ends of the seventh to ninth vertical exhaust passages 771a, 771b, and 771c (771a, 771b, and 771c) may be formed in the form of holes opened on the lower surface of the second front exhaust part 750, As a result, it can easily communicate with the seventh to ninth exhaust communication holes 817a, 817b, and 817c.

With the above configuration, as shown in FIGS. 9, 14, and 16, the first front exhaust unit 710 and the second front exhaust unit 750 include the first exhaust slit 720 and the second exhaust slit External gas may be exhausted through 760.

Therefore, it is possible to prevent the external gas from flowing into the storage compartment 200 through the front opening 251 in advance, and as a result, the external gas is mixed with the purge gas sprayed into the storage compartment 200, causing a kind of turbulent flow. formation can be prevented.

In addition, as described above, the first exhaust slit 720 is formed on the right side of the first front exhaust unit 710 so as to be opened in the right direction from the front of the storage compartment 200, and the second exhaust slit 760 is It is formed on the left side of the second front exhaust unit 750 so as to be opened in the right direction from the front of the storage compartment 200 .

Therefore, external gas can be easily exhausted in the left and right directions by the first and second front exhaust units 710 and 750, and thus, the inflow of external gas into the storage compartment 200 can be more effectively blocked. there is.

In addition, the first to second front exhaust units 710 and 750 may exhaust purge gas in the first to third purging regions 210 , 220 and 230 as well as external gas.

In other words, as shown in FIG. 16, the 1-1 to 3-1 injection units 310a, 320a, and 330a and the 1-2 to 3-2 injection units 310b, 320b, and 330b spray The purge gas injected in the forward direction among the released purge gases may be exhausted by the first and second front exhaust units 710 and 750 .

As described above, the first and second front exhaust units 710 and 750 are connected to the 1-1 to 3-1 injection units 310a, 320a, and 330a and the 1-2 to 3-2 injection units 310b and 320b. , 330b), the 1-1 to 3-1 injection units 310a, 320a, and 330a in the first and second supply units 510 and 520 are discharged by exhausting some of the purge gases injected in the forward direction. ) and the flow of the purge gas supplied to the 1-2 to 3-2 injection units 310b, 320b, and 330b is more smooth.

In other words, in the first and second supply units 510 and 520, the 1-1 to 3-1 injection units 310a, 320a, and 330a and the 1-2 to 3-2 injection units 310b, 320b, and 330b ) The flow of the purge gas supplied to the 1-1 to 3-1 injection parts (310a, 320a, 330a) and 1-2 to 3-2 injection parts (310b, 320b, 330b) due to the size Relatively weak flow may be shown, but as described above, the first and second front exhaust units 710 and 750 are supplied to the 1-1 to 3-1 injection units 310a, 320a, and 330a and the 1-2 Since the purge gas injected from the to 3-2 injection units 310b, 320b, and 330b is exhausted, the flow may be smoother.

Therefore, the first and second supply units 510 and 520 are directed toward the rear side relatively due to the organic coupling relationship between the first and second front exhaust units 710 and 750 and the first and second supply units 510 and 520 as described above. Even if disposed, the 1-1 to 3-1 injection units 310a, 320a, and 330a and the 1-2 to 3-2 injection units 310b, 320b, and 330b in the first and second supply units 510 and 520 ) has the effect that the flow of the purge gas supplied to it can be smooth.

In addition, the flow of the purge gas flowing in the storage chamber 200 can be adjusted according to the suction force of the first and second front exhaust units 710 and 750, thereby removing fume from the wafer W. It is possible to prevent dead areas from occurring.

In other words, when the suction force of the first and second front exhaust units 710 and 750 becomes strong, the purge gas flows from the inside of the storage compartment 200 to the outside of the storage compartment 200, that is, from the rear to the front. A flow is generated, so that the purge gas can be easily flowed over the entire area of the wafer (W). Therefore, fume removal from the entire area of the wafer W can be more easily achieved.

Although it has been described above that the fourth to sixth exhaust spaces 721a, 721b, and 721c communicate with one exhaust slit, that is, the first exhaust slit 720, the fourth to sixth exhaust spaces 721a, 721b, 721c) Three slits formed to correspond to respective heights may be provided. Accordingly, in this case, the first front exhaust unit 710 can more easily achieve selective exhaustion of external gases having a height corresponding to each of the first to third purging regions 210 , 220 , and 230 .

Of course, three slits formed to correspond to the respective heights of the seventh to ninth exhaust spaces 761a, 761b, and 761c may be provided. Accordingly, in this case, the second front exhaust unit 750 can more easily achieve selective exhaustion of external gases having a height corresponding to each of the first to third purging regions 210 , 220 , and 230 .

Lower plate (800)

Hereinafter, the lower plate 800 will be described.

As shown in FIGS. 1 to 3 , the lower plate 800 forms the lower surface of the wafer storage container 10, thereby closing the lower portion of the storage chamber 200 and storing the purge gas supplied from the outside into the wafer. It functions to flow into the container 10.

Also, as shown in FIG. 27 , the lower plate 800 may be formed by combining first to third lower plates 810 , 820 , and 830 of the same shape.

In this case, the second lower plate 820 is coupled to the lower portion of the first lower plate 810 and the third lower plate 830 is coupled to the lower portion of the second lower plate 820 .

In addition, a connection member 850 to which external supply lines (not shown) and external exhaust lines (not shown) are connected, and a support member 860 are installed below the third lower plate 830 .

In this case, the support member 860 is installed on the left and right sides of the lower surface of the lower plate 800, that is, the lower surface of the third lower plate 830, and when the wafer storage container 10 is placed on the load port or the like, It functions to keep it level and to place it stably.

First lower plate 810

Hereinafter, the first lower plate 810 will be described.

As shown in FIG. 28, the first lower plate 810 forms the bottom surface of the storage compartment 200, and includes 1-1 to 3-4 supply communication holes 811a to 813d, and first to 3-4 supply communication holes 811a to 813d. 9 exhaust communication holes 815a, 815b, 815c, 816a, 816b, 816c, 817a, 817b, 817c are formed through upper and lower surfaces of the first lower plate 810, respectively.

The 1-1st to 3-1st supply communication holes 811a, 812a and 813a and the 1-2nd to 3-2nd supply communication holes 811b, 812b and 813b are formed on the upper surface of the first lower plate 810. It is formed on the rear left side of the first lower plate 810 to correspond to the disposed first supply unit 510 .

Each of the 1-1st to 3-1st supply communication holes 811a, 812a and 813a and the 1-2nd to 3-2nd supply communication holes 811b, 812b and 813b has one end of the first supply unit 510. It communicates with the 1-1st to 3-1st supply communication holes 811a, 812a, 813a and the 1-2nd to 3-2nd supply communication holes 811b, 812b, 813b, respectively, and the other end is in communication with the second lower plate. It communicates with the 1-1st to 3-1st supply passages 821a, 822a, 823a and the 1-2nd to 3-2nd supply passages 821b, 822b, 823b of (820), respectively.

The 1-3 to 3-3 supply communication holes 811c, 812c, and 813c and the 1-4 to 3-4 supply communication holes 811d, 812d, and 813d are formed on the upper surface of the first lower plate 810. It is formed on the rear right side of the first lower plate 810 to correspond to the disposed second supply unit 520 .

Each of the 1-3 to 3-3 supply communication holes 811c, 812c, and 813c and the 1-4 to 3-4 supply communication holes 811d, 812d, and 813d have one end of the second supply unit 520. It communicates with the 1-3 to 3-3 supply communication holes 811c, 812c and 813c and the 1-4 to 3-4 supply communication holes 811d, 812d and 813d, respectively, and the other end is in communication with the second lower plate. It communicates with the 1-3 to 3-3 supply passages 821c, 822c, and 823c and the 1-4 to 3-4 supply passages 821d, 822d, and 823d of the 820, respectively.

The first to third exhaust communication holes 815a , 815b , and 815c are formed at the rear of the first lower plate 810 to correspond to the exhaust unit 400 disposed on the upper surface of the first lower plate 810 .

One end of each of the first to third exhaust communication holes 815a, 815b, and 815c communicates with each of the first to third vertical exhaust passages 411, 421, and 431 of the exhaust unit 400, and the other end communicates with the second lower portion. It communicates with the first rear discharge hole 825 of the plate 820.

The fourth to sixth exhaust communication holes 816a, 816b, and 816c are formed on the front left side of the first lower plate 810 to correspond to the first front exhaust part 710 disposed on the upper surface of the first lower plate 810. do.

One end of each of the fourth to sixth exhaust communication holes 816a, 816b, and 816c communicates with each of the fourth to sixth vertical exhaust passages 731a, 731b, and 731c of the first front exhaust unit 710, and the other end It communicates with each of the fourth to sixth exhaust passages 826a, 826b, and 826c of the second lower plate 820.

The seventh to ninth exhaust communication holes 817a, 817b, and 817c are formed on the front right side of the first lower plate 810 to correspond to the second front exhaust part 750 disposed on the upper surface of the first lower plate 810. do.

Each of the seventh to ninth exhaust communication holes 817a, 817b, and 817c has one end communicating with each of the seventh to ninth vertical exhaust passages 771a, 771b, and 771c of the second front exhaust unit 750, and the other end It communicates with each of the seventh to ninth exhaust passages 827a, 827b, and 827c of the second lower plate 820.

Second lower plate (820)

Hereinafter, the second lower plate 820 will be described.

As shown in FIG. 29, the second lower plate 820 is coupled to the lower portion of the first lower plate 810, the 1-1 to 3-4 supply passages 821a to 823d, and the first rear The discharge hole 825 and the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b, and 827c are formed through upper and lower surfaces of the second lower plate 820, respectively.

The 1-1 to 3-2 supply passages 821a to 823b are formed to extend from the rear left side of the second lower plate 820 toward the rear center.

One ends of the 1-1 to 3-2 supply passages 821a to 823b communicate with the 1-1 to 3-2 supply communication holes 811a to 813b of the first lower plate 810, respectively. The other end communicates with the 1-1 to 3-2 inlet holes 831a to 833b of the third lower plate 830, respectively.

The 1-3 to 3-4 supply passages 821c to 823d extend from the rear right side of the second lower plate 820 toward the rear center.

One ends of the 1-3 to 3-4 supply passages 821c to 823d communicate with the 1-3 to 3-4 supply communication holes 811c to 813d of the first lower plate 810, respectively. The other end communicates with the 1-3 to 3-4 inlet holes 831c to 833d of the third lower plate 830, respectively.

The lengths of the 1-1 to 3-4 supply passages 821a to 823d are longer than the 1-1 to 1-4 supply passages 821a to 821d. 822d) is formed shorter, and it is preferable that the 3-1 to 3-4 supply passages 823a to 823d are shorter than the 2-1 to 2-4 supply passages 822a to 822d.

As described above, by forming the length of the supply passage for supplying the purge gas to the third injection unit 330 shorter than the length of the supply passage for supplying the purge gas to the first injection unit 310 and the second injection unit 320. , a sufficient amount of purge gas can be injected into the third purging region 230 partitioned above the storage chamber 200 .

By adjusting the length of the supply passage as described above, a sufficient amount of purge gas can be supplied to the injection part located at the upper part, and thus, a uniform amount of purge gas can be supplied to the first to third purging regions 210, 220, and 230. A purge gas may be injected.

The first rear discharge hole 825 is formed at the rear of the second lower plate 820 .

The first rear discharge hole 825 has an upper portion communicating with the first to third exhaust communication holes 815a, 815b, and 815c of the first lower plate 810, and a lower portion communicating with the second exhaust communication holes 815a, 815b, and 815c of the third lower plate 830. It communicates with the rear exhaust hole 490.

The fourth to sixth exhaust passages 826a, 826b, and 826c are formed to extend from the front left side of the second lower plate 820 toward the front center.

The fourth to sixth exhaust passages 826a, 826b, and 826c have one ends communicating with the fourth to sixth exhaust communication holes 816a, 816b, and 816c of the first lower plate 810, respectively, and the other ends thereof communicate with the fourth to sixth exhaust communication holes 816a, 816b, and 816c of the first lower plate 810, respectively. 3 communicates with the fourth to sixth discharge holes 836a, 836b, and 836c of the lower plate 830, respectively.

The seventh to ninth exhaust passages 827a, 827b, and 827c are formed to extend from the front right side of the second lower plate 820 toward the front center.

The seventh to ninth exhaust passages 827a, 827b, and 827c have one end communicating with the seventh to ninth exhaust communication hole 817a, 817b, and 817c of the first lower plate 810, respectively, and the other end 3 communicates with the seventh to ninth discharge holes 837a, 837b, and 837c of the lower plate 830, respectively.

The lengths of the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b, and 827c are shorter than the lengths of the fourth exhaust passage 826a and the seventh exhaust passage 827a. It is preferable that the passage 827b is formed shorter, and the sixth exhaust passage 826c and the ninth exhaust passage 827c are shorter than the fifth exhaust passage 826b and the eighth exhaust passage 827b.

As described above, the length of the exhaust passage through which the external gas is exhausted through the sixth exhaust space 721c of the first front exhaust unit 710 and the ninth exhaust space 761c of the second front exhaust unit 750 is first through the fourth exhaust space 721a and fifth exhaust space 721b of the front exhaust unit 710 and the seventh exhaust space 761a and eighth exhaust space 761b of the second front exhaust unit 750 Exhaust resistance of the first and second front exhaust units 710 and 750 may be made the same by forming the length of the exhaust passage through which gas is exhausted shorter than the length of the exhaust passage.

In detail, the length of the passage based on the first front exhaust part 710 is "the fourth vertical exhaust passage 731a + the fourth exhaust passage 826a = the fifth vertical exhaust passage 731b + the fifth exhaust passage" Flow path 826b = sixth vertical exhaust flow path 731c + sixth exhaust flow path 826c ", the fourth to sixth exhaust spaces 721a, 721b, 721c) may have the same exhaust resistance, and thus, uniform exhaust to the fourth to sixth exhaust spaces 721a, 721b, and 721c may be achieved.

In addition, the length of the flow path based on the second front exhaust part 750 is "7th vertical exhaust flow path 771a + 7th exhaust flow path 827a = 8th vertical exhaust flow path 771b + 8th exhaust flow path 827b ) = ninth vertical exhaust flow path (771c) + ninth exhaust flow path (827c)", the seventh to ninth exhaust spaces 761a, 761b, and 761c of the second front exhaust unit 750 The exhaust resistance may be formed to be the same, and due to this, uniform exhaust to the seventh to ninth exhaust spaces 761a, 761b, and 761c may be achieved.

Third lower plate (830)

Hereinafter, the third lower plate 830 will be described.

As shown in FIG. 30, the third lower plate 830 is coupled to the lower portion of the second lower plate 820, the 1-1 to 3-4 inlet holes 831a to 833d, and the second rear The discharge hole 835 and the fourth to ninth discharge holes 836a, 836b, 836c, 837a, 837b, and 837c are formed through upper and lower surfaces of the third lower plate 830, respectively.

The 1-1 to 3-1 inlet holes 831a, 832a, and 833a and the 1-2 to 3-2 inlet holes 831b, 832b, and 833b are located at the rear center of the third lower plate 830 on the front side. It is formed so as to be arranged in the rear direction in

The 1-3 to 3-3 inlet holes 831c, 832c, and 833c and the 1-4 to 3-4 inlet holes 831d, 832d, and 833d are based on the center line of the third lower plate 830. The rear center of the third lower plate 830 is symmetrical with the 1-1 to 3-1 inlet holes 831a, 832a, and 833a and the 1-2 to 3-2 inlet holes 831b, 832b, and 833b. arranged in an anterior to posterior direction.

Upper portions of the 1-1 to 3-4 inlet holes 831a to 833d communicate with the 1-1 to 3-4 supply passages 821a to 823d of the second lower plate 820 .

The 1-1 and 1-3 inlet holes 831a and 831c communicate with the 1-1 main inlet hole 851a of the connecting member 850, and the 2-1 and 2-3 inlet holes 832a and 832c ) communicates with the 2-1 main inlet hole 852a of the connecting member 850, and the 3-1 and 3-3 inlet holes 833a and 833c communicate with the 3-1 main inlet of the connecting member 850. It communicates with the hole 853a.

The 1-2 and 1-4 inlet holes 831b and 831d communicate with the 1-2 main inlet hole 851b of the connecting member 850, and the 2-2 and 2-4 inlet holes 832b and 832d ) communicates with the 2-2 main inlet hole 852b of the connecting member 850, and the 3-2 and 3-4 inlet holes 833b and 833d are connected to the 3-2 main inlet of the connecting member 850. It communicates with the hole 853b.

The second rear discharge hole 835 connects the upper and lower surfaces of the second lower plate 820 to the rear of the third lower plate 830 so as to communicate with the first rear discharge hole 825 of the second lower plate 820. formed through

The second rear discharge hole 835 has one end communicating with the first rear discharge hole 825 and the other end communicating with the combined discharge passage 855 of the connecting member 850 .

The fourth to ninth discharge holes 836a, 836b, 836c, 837a, 837b, and 837c are located in front of the 1-1 to 3-4 inlet holes 831a to 833d of the second lower plate 820. It is formed through the upper and lower surfaces of the second lower plate 820 at the center.

One end of each of the fourth to ninth discharge holes 836a, 836b, 836c, 837a, 837b, and 837c is connected to the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b of the second lower plate 820, 827c), and the other end of each communicates with the integrated discharge passage 855 of the connecting member 850.

As described above, by forming supply/exhaust communication holes, supply/exhaust passages, etc. in the first to third lower plates 810, 820, 830, respectively, the shape of the passage inside the lower plate 800 is complicated. Even if there is, it can be formed easily.

In addition, when the wafer container 10 is coupled to a load port and connected to an external supply/exhaust line, the supply/exhaust communication holes and supply/exhaust passages of the first to third lower plates 810, 820, and 830 as described above. By properly forming the etc., it is possible to simplify the supply lines through which the purge gas is supplied and the exhaust line through which the purge gas and fume are exhausted.

connecting member (850)

Hereinafter, the connection member 850 will be described.

As shown in FIG. 27 , the connecting member 850 is installed under the lower plate 800 , that is, under the third lower plate 830 .

The connecting member 850 serves to connect the 1-1 to 3-2 external supply lines (not shown) and the external exhaust line (not shown) to the wafer storage container 10 .

As shown in FIG. 31, the connecting member 850 has 1-1 to 3-2 main inlet holes 851a to 853b, an integrated discharge passage 855 and a main exhaust hole 490 formed therein.

The 1-1 main inlet hole 851a is in communication with the 1-1 and 1-3 inlet holes 831a and 831c of the third lower plate 830, and the 2-1 main inlet hole 852a is 3 communicates with the 2-1 and 2-3 inlet holes 832a and 832c of the lower plate 830, and the 3-1 main inlet hole 853a is the 3-1, 3-1 of the third lower plate 830, It communicates with the 3-3 inlet holes 833a and 833c.

The 1-2 main inlet hole 851b communicates with the 1-2 and 1-4 inlet holes 831b and 831d of the third lower plate 830, and the 2-2 main inlet hole 852b is 3 communicates with the 2-2 and 2-4 inlet holes 832b and 832d of the lower plate 830, and the 3-2 main inlet hole 853b is the 3-2, It communicates with the 3-4 inlet holes 833b and 833d.

The 1-1 to 3-2 main inlet holes 851a to 853b are connected to the 1-1 to 3-2 external supply lines, respectively.

Therefore, as the 1-1 to 3-2 external supply lines, that is, the 6 external supply lines are individually controlled, the 6 injection ports communicating with the 1-1 to 3-2 main inlet holes 851a to 853b are individually controlled. The additional purge gas may be individually injected into the first to third purging regions 210, 220, and 230, and a detailed description thereof will be described later.

The integrated discharge passage 855 is formed by the second rear discharge hole 835 of the second lower plate 820 and the fourth to ninth discharge holes 836a, 836b, 836c, 837a, 837b, 837c and the main exhaust hole 490. ) functions as a flow path that communicates.

An external exhaust line is connected to the main exhaust hole 490, so that the purge gas, fume of the wafer W, external gas, etc. exhausted through the integrated discharge passage 855 can easily escape from the wafer storage container 10. can be ejected.

Upper plate (900)

As shown in FIGS. 1 to 3 , the upper plate 900 forms the upper surface of the wafer storage container 10 and serves to close the upper portion of the storage chamber 200 .

In this case, the lower surface of the upper plate 900 is coupled to the upper surface of the fourth horizontal member 114, the upper surface of the eighth horizontal member 118, and the upper surface of the exhaust unit 400.

The overall shape of the upper plate 900 has the same overall shape as that of the lower plate 800 .

A wafer detection sensor (not shown) may be provided on the lower surface of the upper plate 900 .

The wafer detection sensor may detect whether the wafer W is stored and which of the plurality of supports 600 supports the wafer W on which support 600 .

Purge gas supply/injection flow of the wafer storage container 10

Hereinafter, the purge gas supply/injection flow of the wafer storage container 10 according to a preferred embodiment of the present invention will be described.

As shown in FIG. 33, the purge gas supply/injection flow of the wafer storage container 10 according to a preferred embodiment of the present invention is connected to the 1-1 to 3-2 main inlet holes 851a and 853b. It is made by the 1-1 to 3-2 external supply lines.

The 1-1 external supply line supplies purge gas to the 1-1 injection unit 310a and the 1-3 injection unit 310c, and the 1-2 external supply line supplies the 1-2 injection unit ( 310b) and the purge gas is supplied to the first to fourth injection units 310d. Therefore, the purge gas is supplied to each of the 1-1 to 1-4 injection units 310a to 310d by the 1-1 external supply line and the 1-2 external supply line, and the purge gas supplied in this way The first purging area 210 is partitioned in the storage room 200 by being sprayed into the storage room 200 from the 1-1 to 1-4 injection units 310a to 310d.

The 2-1 external supply line supplies purge gas to the 2-1 injection unit 320a and the 2-3 injection unit 320c, and the 2-2 external supply line supplies the 2-2 injection unit ( 320b) and the purge gas are supplied to the second-fourth injection unit 320d. Therefore, the purge gas is supplied to each of the 2-1 to 2-4 injection units 320a to 320d by the 2-1 external supply line and the 2-2 external supply line, and the purge gas supplied in this way The second purging area 220 is partitioned in the storage room 200 by being sprayed into the storage room 200 from the 2-1 to 2-4 injection units 320a to 320d.

The 3-1 external supply line supplies purge gas to the 3-1 injection unit 330a and the 3-3 injection unit 330c, and the 3-2 external supply line supplies the 3-2 injection unit ( 330b) and the purge gas is supplied to the third and fourth injection units 330d. Therefore, the purge gas is supplied to each of the 3-1 to 3-4 injection units 330a to 330d by the 3-1 external supply line and the 3-2 external supply line, and the purge gas supplied in this way The third purging area 230 is partitioned in the storage room 200 by being sprayed into the storage room 200 from the 3-1 to 3-4 injection units 330a to 330d.

Hereinafter, the supply/injection flow of the purge gas composed of the first to third purging regions 210, 220, and 230 by the 1-1 to 3-2 external supply lines will be described in detail.

1st- 1 external supply line and first- 2 outside Purge gas supply/injection flow by supply line

Hereinafter, with reference to FIGS. 4, 7, 12, 16, 32 and 33, the purge gas composed of the first purging region 210 by the 1-1 external supply line and the 1-2 external supply line The supply/injection flow is explained.

When the purge gas is supplied from the 1-1 external supply line, the purge gas flows through the 1-1 supply passage 821a and the 1-3 Divided into the supply passage 821c, it flows.

The purge gas flowing through the 1-1 supply passage 821a flows through the 1-1 supply communication hole 811a and flows into the 1-1 vertical supply passage 541a of the first supply unit 510 . The purge gas flowing through the 1-1 vertical supply passage 541a is supplied into the 1-1 injection unit 310a through the 1-1 supply space 531a and the 1-1 supply hole 371a. . In this way, the purge gas supplied into the 1-1 injection unit 310a is injected to the left side of the first purging region 210 through the injection hole 390 .

The purge gas flowing through the 1-3 supply passage 821c flows through the 1-3 supply communication hole 811c and flows into the 1-3 vertical supply passage 541c of the second supply unit 520 . The purge gas flowing through the 1-3 vertical supply passage 541c is supplied into the 1-3 injection unit 310c through the 1-3 supply space 531c and the 1-3 supply hole 371c. . In this way, the purge gas supplied into the first to third injection units 310c is injected to the right side of the first purging region 210 through the injection hole 390 .

When the purge gas is supplied from the 1-2 external supply line, the purge gas is supplied to the 1-2 supply passage 821b and the 1-4 supply passages 821b through the 1-2 main inlet hole 851b of the connecting member 850. Divided into the supply passage 821d, it flows.

The purge gas flowing through the 1-2 supply passage 821b flows through the 1-2 supply communication hole 811 b and flows into the 1-2 vertical supply passage 541 b of the first supply unit 510 . The purge gas flowing through the 1-2 vertical supply passage 541b is supplied into the 1-2 injection unit 310b through the 1-2 supply space 531 b and the 1-2 supply hole 371 b. . In this way, the purge gas supplied to the inside of the 1-2 injection unit 310b is injected to the rear left side of the first purging region 210 through the injection hole 390 .

The purge gas flowing through the 1-4 supply passage 821d flows through the 1-4 supply communication hole 811d and flows into the 1-4 vertical supply passage 541d of the second supply unit 520 . The purge gas flowing through the 1-4th vertical supply passage 541d is supplied into the 1-4th injection unit 310d through the 1-4th supply space 531d and the 1-4th supply hole 371d. . In this way, the purge gas supplied into the first to fourth injection units 310d is injected to the rear right side of the first purging region 210 through the injection hole 390 .

2nd- 1 external supply line and second- 2 outside Purge gas supply/injection flow by supply line

Hereinafter, with reference to FIGS. 4, 7, 12, 16, 32 and 33, the purge gas composed of the second purging region 220 by the 2-1 external supply line and the 2-2 external supply line The supply/injection flow is explained.

When the purge gas is supplied from the 2-1st external supply line, the purge gas flows through the 2-1st supply passage 822a and the 2-3rd supply passage 822a through the 2-1st main inlet hole 852a of the connecting member 850. Divided into the supply passage 822c, it flows.

The purge gas flowing through the 2-1st supply passage 822a flows through the 2-1st supply communication hole 812a and flows into the 2-1st vertical supply passage 542a of the first supply unit 510 . The purge gas flowing through the 2-1 vertical supply passage 542a is supplied into the 2-1 injection unit 320a through the 2-1 supply space 532a and the 2-1 supply hole 372a. . In this way, the purge gas supplied into the 2-1 injection unit 320a is injected to the right side of the second purging region 220 through the injection hole 390 .

The purge gas flowing through the 2-3 supply passage 822c flows through the 2-3 supply communication hole 812c and flows into the 2-3 vertical supply passage 542c of the second supply unit 520 . The purge gas flowing through the 2-3 vertical supply passage 542c is supplied into the 2-3 injection unit 320c through the 2-3 supply space 532c and the 2-3 supply hole 372c. . In this way, the purge gas supplied into the second-third injection unit 320c is injected to the right side of the second purging region 220 through the injection hole 390 .

When the purge gas is supplied from the 2-2 external supply line, the purge gas is supplied to the 2-2 supply passage 822b and the 2-4 through the 2-2 main inlet hole 852b of the connecting member 850. Divided into the supply passage 822d, it flows.

The purge gas flowing through the 2-2 supply passage 822b flows through the 2-2 supply communication hole 812 b and flows into the 2-2 vertical supply passage 542 b of the first supply unit 510 . The purge gas flowing through the 2-2 vertical supply passage 542b is supplied into the 2-2 injection unit 320b through the 2-2 supply space 532b and the 2-2 supply hole 372b. . In this way, the purge gas supplied to the inside of the 2-2 injection unit 320b is injected to the rear left side of the second purging region 220 through the injection hole 390 .

The purge gas flowing through the 2-4th supply passage 822d flows through the 2-4th supply communication hole 812d and flows into the 2-4th vertical supply passage 542d of the second supply part 520 . The purge gas flowing through the 2-4th vertical supply passage 542d is supplied into the 2-4th injection unit 320d through the 2-4th supply space 532d and the 2-4th supply hole 372d. . In this way, the purge gas supplied to the inside of the second-fourth injection unit 320d is injected to the rear right side of the second purging region 220 through the injection hole 390 .

Third- 1 external supply lines and third- 2 outside Purge gas supply/injection flow by supply line

Hereinafter, referring to FIGS. 4, 7, 12, 16, 32 and 33, the purge gas composed of the third purging region 230 by the 3-1 external supply line and the 3-2 external supply line The supply/injection flow is explained.

When the purge gas is supplied from the 3-1 external supply line, the purge gas is supplied to the 3-1 supply passage 823a and the 3-3 through the 3-1 main inlet hole 853a of the connecting member 850. Divided into the supply passage 823c, it flows.

The purge gas flowing through the 3-1 supply passage 823a flows through the 3-1 supply communication hole 813a and flows into the 3-1 vertical supply passage 543a of the first supply unit 510 . The purge gas flowing through the 3-1 vertical supply passage 543a is supplied into the 3-1 injection unit 330a through the 3-1 supply space 533a and the 3-1 supply hole 373a. . In this way, the purge gas supplied into the 3-1 injection unit 330a is injected to the right side of the third purging region 230 through the injection hole 390 .

The purge gas flowing through the 3-3 supply passage 823c flows into the 3-3 supply communication hole 813c and flows into the 3-3 vertical supply passage 543c of the second supply unit 520 . The purge gas flowing through the 3-3 vertical supply passage 543c is supplied into the 3-3 injection unit 330c through the 3-3 supply space 533c and the 3-3 supply hole 373c. . In this way, the purge gas supplied into the 3-3 injection unit 330c is injected to the right side of the third purging region 230 through the injection hole 390 .

When the purge gas is supplied from the 3-2 external supply line, the purge gas is supplied to the 3-2 supply passage 823b and the 3-4 through the 3-2 main inlet hole 853b of the connecting member 850. Divided into the supply passage 823d, it flows.

The purge gas flowing through the 3-2 supply passage 823b flows into the 3-2 supply communication hole 813 b and flows into the 3-2 vertical supply passage 543 b of the first supply unit 510 . The purge gas flowing through the 3-2 vertical supply passage 543b is supplied into the 3-2 injection unit 330b through the 3-2 supply space 533b and the 3-2 supply hole 373b. . In this way, the purge gas supplied into the 3-2 injection unit 330b is injected to the rear left side of the third purging region 230 through the injection hole 390 .

The purge gas flowing through the 3-4 supply passage 823d flows through the 3-4 supply communication hole 813d and flows into the 3-4 vertical supply passage 543d of the second supply unit 520 . The purge gas flowing through the 3-4 vertical supply passage 543d is supplied into the 3-4 injection unit 330d through the 3-4 supply space 533d and the 3-4 supply hole 373d. . In this way, the purge gas supplied into the third and fourth injection units 330d is injected to the rear right side of the third purging region 230 through the injection hole 390 .

As described above, the wafer container 10 according to a preferred embodiment of the present invention includes the 1-1 and 1-3 jetting units 310a and 310c, and the 1-2nd and 1-4 jetting units 310b and 310d. ), the 2-1 and 2-3 injection units 320a and 320c, the 2-2 and 2-4 injection units 320b and 320d, the 3-1 and 3-3 injection units 330a and 330c, and The 3-2 and 3-4 injection units 330b and 330d receive purge gas individually through the 1-1 to 3-2 external supply lines, respectively, and the first to third purging regions 210 and 220 , purge gas injection to 230) can be achieved.

Therefore, by controlling the purge gas supply of the 1-1 to 3-2 external supply lines, the purge gas can be selectively injected only to a desired region among the first to third purging regions 210, 220, and 230.

For example, when the robot arm accommodates and supports the wafer W only in the support 600 located in the second purging area 220, the 2-1 external supply line and/or the 2-2 external supply line purging the wafer W. By supplying the gas so that the purge gas is sprayed only to the second purging region 220 , the wafer W located in the second purging region 220 may be purged. Therefore, unlike the prior art, unnecessary waste of purge gas can be reduced.

In addition, uniform purging of the wafers W stored in the storage chamber 200 can be guaranteed.

For example, when MFC (Mass Flow Controller) is provided in each of the 1-1 to 3-2 external supply lines, the pressure of the purge gas supplied to the 3-1 and 3-2 external supply lines using the MFC When is increased, the pressure of the purge gas injected into the third purging region 230 from the inside of the 3-1 to 3-4 injection units 330a to 330d through the injection hole 390 also increases. Therefore, unlike the prior art, a sufficient amount of purge gas can be injected even into the third purging region 230 located at the top inside the storage room 200, and in this way, the 1-1 to 3-2 outside Uniform purging of the wafers W stored in the storage chamber 200 can be achieved by setting the supply pressure of the purge gas supplied from the supply line to be different.

Exhaust flow of purge gas, fume and external gas in the wafer storage container 10

Hereinafter, the exhaust flow of the purge gas of the wafer storage container 10, the fume of the wafer W, and the external gas according to a preferred embodiment of the present invention will be described.

As shown in FIG. 34, the purge gas of the wafer storage container 10, the fume of the wafer W, and the exhaust flow of the external gas according to the preferred embodiment of the present invention flow through the external exhaust line connected to the main exhaust hole 857. (not shown).

The exhaust unit 400 supplies the purge gas and the fume of the wafer W sprayed to the first to third purging regions 210, 220, and 230 by the 1-1 to 3-2 injection units 310a to 330d. and the first and second front exhaust units 710 and 750 function to exhaust external gas outside the wafer storage container 10 .

Hereinafter, the exhaust flow of the exhaust unit 400 and the first and second front exhaust units 710 and 750 will be described in detail.

to the exhaust unit 400 purge gas by fume exhaust flow

Hereinafter, referring to FIGS. 9, 14, 16, 32, and 34, the purge gas of the first to third purging regions 210, 220, and 230 by the exhaust unit 400 and the fume of the wafer W The exhaust flow that is exhausted will be explained.

When a suction force is generated in the external exhaust line by a suction fan or the like, the purge gas in the first purging region 210 and the fume of the wafer W flow into the first exhaust space 410 through the exhaust hole 490. . The purge gas and fume of the wafer W flowing into the first exhaust space 410 flow to the first exhaust communication hole 815a through the first vertical exhaust passage 411, and the first rear exhaust hole 825 ), and flows through the second rear discharge hole 835 to the integrated discharge passage 855. The purge gas and fume of the wafer W flowing through the combined discharge passage 855 in this way flow into the main exhaust hole 857 and then are exhausted to the outside of the wafer storage container 10 through an external exhaust line.

When a suction force is generated in the external exhaust line by a suction fan or the like, the purge gas in the second purging area 220 and the fume of the wafer W flow into the second exhaust space 420 through the exhaust hole 490. . The purge gas and fume of the wafer W flowing into the second exhaust space 420 flow to the second exhaust communication hole 815b through the second vertical exhaust passage 421, and the first rear exhaust hole 825 ), and flows through the second rear discharge hole 835 to the integrated discharge passage 855. The purge gas and fume of the wafer W flowing through the combined discharge passage 855 in this way flow into the main exhaust hole 857 and then are exhausted to the outside of the wafer storage container 10 through an external exhaust line.

When a suction force is generated in the external exhaust line by a suction fan or the like, the purge gas in the third purging region 230 and the fume of the wafer W flow into the third exhaust space 430 through the exhaust hole 490. . The purge gas and fume of the wafer W flowing into the third exhaust space 430 flow to the second exhaust communication hole 815c through the third vertical exhaust passage 431, and the first rear exhaust hole 825 ), and flows through the second rear discharge hole 835 to the integrated discharge passage 855. The purge gas and fume of the wafer W flowing through the combined discharge passage 855 in this way flow into the main exhaust hole 857 and then are exhausted to the outside of the wafer storage container 10 through an external exhaust line.

As described above, the purge gas and the fume of the wafer W exhausted through the exhaust unit 400 are exhausted through each exhaust passage, that is, three exhaust passages, and then discharged to the first rear of the second lower plate 820 It is collected into one from the hole 825 and exhausted.

This is to easily exhaust the purge gas and the fume of the wafer W through the suction force of one external exhaust line. Therefore, in order to selectively exhaust the purge gas of the first to third purging regions 210, 220, and 230 and the fume of the wafer W, the first to third vertical exhaust passages 411, 42, and 431 Preferably a valve is provided.

In other words, a valve such as a solenoid valve may be provided in each of the first to third vertical exhaust passages 411, 42, and 431, and by controlling the solenoid valve, the first to third purging regions 210, 220, Selective exhaust of the purge gas of 230 and the fume of the wafer W can be easily achieved. Therefore, when the purge gas is selectively injected from the 1-1 to 3-2 injection units 310a to 330d to the first to third purging regions 210, 220, and 230, the first to third purging regions Among 210, 220, and 230, the purge gas and fume of the wafer W may be exhausted only in the purging area where the purge gas is injected.

As described above, by controlling and selectively performing purge gas injection into the first to third purging regions 210, 220, and 230 and exhausting the purge gas and fume, the aforementioned uniform purging of the wafer W is further achieved. It can be excellently guaranteed, and the waste of unnecessary purge gas can be significantly reduced.

In addition, unlike the above-described embodiment, the exhaust unit 400 may be connected to an external supply line and function to inject purge gas. In this case, the first to third purging regions 210, 220, and 230 A purge gas may be selectively injected to the rear of each.

1st front exhaust Exhaust flow of external gas by (710, 750)

Hereinafter, an exhaust flow of external gas exhausted by the first and second front exhaust units 710 and 750 will be described with reference to FIGS. 9, 14, 16, 32, and 34 .

When a suction force is generated in the external exhaust line by a suction fan or the like, external gases outside the front left side of the wafer storage container 10 pass through the first exhaust slit 720 of the first front exhaust unit 710 to the fourth to sixth It flows into the exhaust spaces 721a, 721b, and 721c.

The external gas flowing into the fourth exhaust space 721a flows into the fourth exhaust communication hole 816a through the fourth vertical exhaust passage 731a, and flows through the fourth exhaust passage 826a and the fourth discharge hole 836a. ) to flow into the integrated discharge passage 855. The external gas flowing through the integrated discharge passage 855 flows into the main exhaust hole 857 and is then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

The external gas flowing into the fifth exhaust space 721b flows into the fifth exhaust communication hole 816b through the fifth vertical exhaust passage 731b, and flows through the fifth exhaust passage 826b and the fifth discharge hole 836b. ) to flow into the integrated discharge passage 855. The external gas flowing through the integrated discharge passage 855 flows into the main exhaust hole 857 and is then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

The external gas flowing into the sixth exhaust space 721c flows into the sixth exhaust communication hole 816c through the sixth vertical exhaust passage 731c, and the fifth exhaust passage 826c and the fifth discharge hole 836c ) to flow into the integrated discharge passage 855. The external gas flowing through the integrated discharge passage 855 flows into the main exhaust hole 857 and is then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

When a suction force is generated in the external exhaust line by a suction fan or the like, external gases outside the front right side of the wafer storage container 10 pass through the second exhaust slit 760 of the second front exhaust unit 750 to the seventh to ninth exhaust lines. It flows into the exhaust spaces 761a, 761b, and 761c.

The external gas flowing into the seventh exhaust space 761a flows into the seventh exhaust communication hole 817a through the seventh vertical exhaust passage 771a, and flows through the seventh exhaust passage 827a and the seventh discharge hole 837a. ) to flow into the integrated discharge passage 855. The external gas flowing through the integrated discharge passage 855 flows into the main exhaust hole 857 and is then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

The external gas flowing into the eighth exhaust space 761b flows into the eighth exhaust communication hole 817b through the eighth vertical exhaust passage 771b, and flows through the eighth exhaust passage 827b and the eighth discharge hole 837b. ) to flow into the integrated discharge passage 855. The external gas flowing through the integrated discharge passage 855 flows into the main exhaust hole 857 and is then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

The external gas flowing into the ninth exhaust space 761c flows into the ninth exhaust communication hole 817c through the ninth vertical exhaust passage 771c, and flows through the ninth exhaust passage 827c and the ninth discharge hole 837c. ) to flow into the integrated discharge passage 855. The external gas flowing through the integrated discharge passage 855 flows into the main exhaust hole 857 and is then exhausted to the outside of the wafer storage container 10 through the external exhaust line.

As described above, the first and second front exhaust units 710 and 750 exhaust external gas from the front left and right sides of the wafer storage container 10, respectively, and flow into the storage compartment 200 through the front opening 251. It is possible to prevent interference with purging of the wafer W in the first to third purging regions 210 , 220 , and 230 by blocking external gas in advance.

As described above, the external gas exhausted through the first and second front exhaust units 710 and 750 is exhausted through each of the exhaust passages, that is, through the six exhaust passages, and then the integrated discharge passage 855 of the connecting member 850. ) from which they are collected and exhausted.

This is to easily exhaust the external gas through the suction force of one external exhaust line. Therefore, in order to selectively exhaust the external gas at a height corresponding to the first to third purging regions 210, 220, and 230, the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b, and 827c ) is preferably provided with a valve.

In other words, a valve such as a solenoid valve may be provided in each of the fourth to ninth exhaust passages 826a, 826b, 826c, 827a, 827b, and 827c, and the first to third purging regions are controlled by controlling the solenoid valve. Selective exhaust for external gas at heights corresponding to (210, 220, 230) can be easily achieved.

Therefore, as described above, when the purge gas is selectively injected and exhausted into any one of the first to third purging regions 210, 220, and 230, the outside of the region corresponding to the height of the purging region Only gas can be selectively exhausted, and thus, the inflow of external gas into the purging area where purging is performed can be blocked in advance.

Also, unlike the above-described embodiment, the first and second front exhaust units 710 and 750 may function to spray purge gas by being connected to an external supply line. In this case, the outside of the wafer storage container 10 Purge gas is sprayed to the front left and right sides.

In this way, spraying the purge gas through the first and second front exhaust units 710 and 750 is performed when external gas contamination outside the wafer storage container 10 is severe (eg, fume, etc., outside the wafer storage container 10). remaining) by spraying the purge gas to prevent fume from remaining in other semiconductor processing equipment located outside the wafer storage container 10, and at the same time the contaminated external gas is introduced into the storage chamber 200 can block it

As described above, although it has been described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. Or it can be carried out by modifying.

10: wafer storage container
111 to 118: first to eighth horizontal members
121 to 126: first to sixth vertical members
200: storage room 210: first purging area
220: second purging area 230: third purging area
251: front opening
310: first injection unit 310a to 310d: 1-1 to 1-4 injection units
320: second injection unit 320a to 320d: 2-1 to 2-4 injection units
330: 3rd injection part 330a ~ 330d: 3-1st to 3-4th injection part
340: first injection part inner wall surface 345: first support coupling part
350: second injection part inner wall surface 355: second support coupling part
361: outer wall surface of the first injection unit 362: outer wall surface of the second injection unit
371a to 371d: 1-1 to 1-4 supply holes
372a ~ 372d: 2-1 to 2-4 supply holes
373a ~ 373d: 3-1 to 3-4 supply holes
390: injection hole
400: exhaust unit 410: first exhaust space
411: first vertical exhaust passage 420: second exhaust space
421: second vertical exhaust passage 430: third exhaust space
431: third vertical exhaust passage 440: inner wall surface of the exhaust unit
490: exhaust hole
510: first supply unit 520: second supply unit
531a ~ 531d: 1-1 to 1-4 supply spaces
532a ~ 532d: 2-1 to 2-4 supply spaces
533a ~ 533d: 3-1 to 3-4 supply spaces
541a ~ 541d: 1-1 to 1-4 vertical supply passage
542a ~ 542d: 2-1 to 2-4 vertical supply passage
543a ~ 543d: 3-1 to 3-4 vertical supply passage
600: support 610: rear support
611: rear arc portion 612: rear protrusion
620: left support part 621: left arc part
622: left protrusion 630: right support
631: right arc part 632: right protrusion part
640: left slope 650: right slope
660: left concave portion 670: right concave portion
710: first front exhaust unit 720: first exhaust slit
721a ~ 721c: 4th to 6th exhaust spaces
731a ~ 731c: 4th to 6th vertical exhaust passages
750: second front exhaust unit 760: second exhaust slit
761a ~ 761c: 7th to 9th exhaust spaces
771a ~ 771c: 7th to 9th vertical exhaust passages
800: lower plate 810: first lower plate
811a to 811d: 1-1 to 1-4 supply communication holes
812a to 812d: 2-1 to 2-4 supply communication holes
813a to 813d: 3-1 to 3-4 supply communication holes
815a to 815c: first to third exhaust communication holes
816a to 816c: 4th to 6th exhaust communication holes
817a to 817c: 7th to 9th exhaust communication holes
820: second lower plate
821a to 821d: 1-1 to 1-4 supply passages
822a ~ 822d: 2-1 to 2-4 supply passage
823a ~ 823d: 3-1 to 3-4 supply passage
825: first rear discharge hole
826a ~ 826c: 4th to 6th exhaust passage
827a ~ 827c: 7th to 9th exhaust passages
830: third lower plate
831a to 831d: 1-1 to 1-4 inlet holes
832a to 832d: 2-1 to 2-4 inlet holes
833a ~ 833d: 3-1 to 3-4 inlet holes
835: second rear discharge hole
836a to 836c: 4th to 6th discharge holes
837a to 837c: 7th to 9th discharge holes
850: connecting member 851a: 1-1 main inlet hole
851b: 1-2 main inlet hole 852a: 2-1 main inlet hole
852b: 2-2 main inlet hole 853a: 3-1 main inlet hole
853b: 3-2 main inlet hole 855: integrated discharge passage
857: main exhaust hole 860: support member
900: upper plate W: wafer

Claims (5)

a storage room in which wafers stored through the front opening are stored;
a lower plate forming a lower surface of the storage chamber and through which purge gas flows;
a spraying unit that surrounds at least a portion of the circumference of the storage compartment and injects purge gas into the storage compartment through spraying holes formed on an inner wall surface of the spraying unit; and
and a supply unit disposed outside the jetting unit and supplying purge gas flowing through the lower plate to the jetting unit by communicating the lower plate and the jetting unit. According to claim 1,
the supply unit,
a vertical supply passage communicating with the supply passage of the lower plate and extending in a vertical direction; and
A supply space communicated with the vertical supply passage to open one surface of the supply unit and communicated with the injection unit;
The wafer storage container according to claim 1 , wherein the purge gas flowing in a horizontal direction inside the lower plate through the supply passage flows in a vertical direction through the vertical supply passage and is then supplied to the ejection unit. According to claim 1,
The storage room can be partitioned into a plurality of purging areas in a vertical direction,
The injection unit is composed of a plurality of injection units arranged in a vertical direction to correspond to each of the plurality of purging regions partitioned in the vertical direction,
The lower plate is provided with a plurality of supply passages for individually flowing purge gas supplied from each of a plurality of external supply lines,
The wafer storage container according to claim 1 , wherein the supply unit includes a plurality of vertical supply passages communicating the plurality of supply passages with each of the plurality of injection units. According to claim 1,
the injection part,
a 1-1 injection unit disposed on the left side of the storage room; and
A 1-2 injection unit disposed adjacent to the 1-1 injection unit and distinguished from the 1-1 injection unit by being horizontally partitioned from each other;
The lower plate,
a 1-1 supply passage communicating with the 1-1 external supply line and through which the purge gas supplied from the 1-1 external supply line flows; and
A 1-2 supply passage communicating with the 1-2 external supply line and flowing the purge gas supplied from the 1-2 external supply line;
the supply unit,
a 1-1 vertical supply passage communicating the 1-1 supply passage and the 1-1 injection part so that the purge gas of the 1-1 supply passage is supplied to the 1-1 injection part; and
and a 1-2 vertical supply passage communicating the 1-2 supply passage and the 1-2 injection part so that the purge gas of the 1-2 supply passage is supplied to the 1-2 injection part. Wafer storage container to be. According to claim 4,
the injection part,
a 2-1 injection unit disposed above the 1-1 injection unit;
A 2-2 injection unit disposed above the 1-2 injection unit, disposed adjacent to the 2-1 injection unit, and horizontally partitioned from the 1-1 injection unit to be distinguished from each other; further included. do,
The lower plate,
a 2-1 supply passage communicating with the 2-1 external supply line and through which the purge gas supplied from the 2-1 external supply line flows; and
A 2-2 supply passage communicated with the 2-2 external supply line and through which the purge gas supplied from the 2-2 external supply line flows;
the supply unit,
a 2-1 vertical supply passage communicating the 2-1 supply passage and the 2-1 injection part so that the purge gas of the 2-1 supply passage is supplied to the 2-1 injection part; and
A 2-2 vertical supply passage communicating the 2-2 supply passage and the 2-2 injection part so that the purge gas of the 2-2 supply passage is supplied to the 2-2 injection part; Characterized by a wafer storage container.

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